Semileds Optoelectronics Co., Ltd. Patent applications |
Patent application number | Title | Published |
20160027978 | LIGHT EMITTING DIODE (LED) DIE HAVING STRAP LAYER AND METHOD OF FABRICATION - A light emitting diode (LED) die includes a first-type semiconductor layer, a multiple quantum well (MQW) layer in electrical contact with the first-type semiconductor layer configured to emit electromagnetic radiation, and a second-type semiconductor layer in electrical contact with the multiple quantum well (MQW) layer. The light emitting diode (LED) die also includes a first pad in electrical contact with the first-type semiconductor layer via, and a second pad in electrical contact with the second type semiconductor layer. The light emitting diode (LED) die also includes a strap layer having conductive straps and contact areas located in trenches in the second type semiconductor layer. | 01-28-2016 |
20150280078 | WHITE FLIP CHIP LIGHT EMITTING DIODE (FC LED) AND FABRICATION METHOD - A white flip chip light emitting diode (FC LED) includes a flip chip (LED) die configured to emit electromagnetic radiation; reflective sidewalls on the (LED) die; and a wavelength conversion member having a uniform thickness and a surface area greater than or equal to a footprint of the flip chip (LED) die configured to change a wavelength of the electromagnetic radiation to produce white light. A method for fabricating the white flip chip light emitting diode (FC LED) includes the steps of: providing the flip chip (LED) die; forming reflective sidewalls on the flip chip (LED) die; and forming a wavelength conversion member on the flip chip (LED) die. | 10-01-2015 |
20150072455 | METHOD FOR FABRICATING LIGHT EMITTING DIODE (LED) DICE WITH WAVELENGTH CONVERSION LAYERS - A method for fabricating light emitting diode (LED) dice includes the step of providing a wavelength conversion layer on a substrate on an adhesive layer configured to have reduced adhesiveness upon exposure to a physical energy, such as electromagnetic radiation or heat. The method also includes the step of exposing the adhesive layer on the substrate to the physical energy to reduce the adhesiveness of the adhesive layer, removing the wavelength conversion layer from the substrate, and attaching the wavelength conversion layer to the light emitting diode (LED) die. | 03-12-2015 |
20140191260 | LIGHT EMITTING SEMICONDUCTOR STRUCTURE - The invention provides a light emitting semiconductor structure, which includes a substrate; a first LED chip formed on the substrate; an adhesion layer formed on the first LED chip; and a second light emitting diode chip formed on the adhesion layer, wherein the second LED chip has a first conductive wire which is electrically connected to the substrate. | 07-10-2014 |
20140154821 | METHOD FOR FABRICATING VERTICAL LIGHT EMITTING DIODE (VLED) STRUCTURE USING A LASER PULSE TO REMOVE A CARRIER SUBSTRATE - A method for fabricating a vertical light-emitting diode (VLED) structure includes the steps of providing a carrier substrate, and forming a semiconductor structure on the carrier substrate having a p-type confinement layer, a multiple quantum well (MQW) layer in electrical contact with the p-type confinement layer configured to emit electromagnetic radiation, and an n-type confinement layer in electrical contact with the multiple quantum well (MQW) layer. The method also includes the steps of removing the carrier substrate using a laser pulse to expose an inverted surface of the n-type confinement layer, and forming a metal contact on the surface of the n-type confinement layer. | 06-05-2014 |
20140151635 | METHOD FOR FABRICATING A LIGHT EMITTING DIODE (LED) DIE HAVING PROTECTIVE SUBSTRATE - A method for fabricating a light emitting diode die includes the steps of providing a carrier substrate and forming an epitaxial structure on the carrier substrate including a first type semiconductor layer, a multiple quantum well (MQW) layer on the first type semiconductor layer configured to emit light, and a second type semiconductor layer on the multiple quantum well (MQW) layer. The method also includes the steps of forming a plurality of trenches through the epitaxial structure, forming a reflector layer on the second type semiconductor layer, forming a seed layer on the reflector layer and in the trenches, and forming a substrate on the seed layer having an area configured to protect the epitaxial structure. | 06-05-2014 |
20140087499 | METHOD FOR HANDLING A SEMICONDUCTOR WAFER ASSEMBLY - Systems and methods for fabricating a light emitting diode include forming a multilayer epitaxial structure above a carrier substrate; depositing at least one metal layer above the multilayer epitaxial structure; removing the carrier substrate. | 03-27-2014 |
20140070164 | LIGHT EMITTING DIODE - The present invention provides a light emitting diode, which comprises a first LED die, a second LED die, and a dummy LED die, wherein the second LED die is disposed between the first LED die and the dummy LED die, and each die comprises a first semi-conductive layer, a second semi-conductive layer, and a multiple quantum well layer disposed between the first and the second semi-conductive layers. The first semi-conductive layer of the first LED die is coupled to the second semi-conductive layer of the second LED die, and the first semi-conductive layer of the second LED die is coupled to the first and second semi-conductive layers of the dummy LED die. | 03-13-2014 |
20140061585 | LIGHT EMITTING DIODE - The present invention provides a light emitting diode, which comprises a first LED die and a second LED die, each die comprising a first semi-conductive layer, a second semi-conductive layer, and a multiple quantum well layer disposed between the first and the second semi-conductive layers, wherein the first semi-conductive layer of the first LED die is coupled to the second semi-conductive layer of the second LED die so as to form a serially connected structure whereby the consuming current and heat generation of the light emitting diode are lowered so that the size of heat dissipating device for the light emitting diode can be reduced and illumination of the light emitting diode can be enhanced. | 03-06-2014 |
20140051197 | METHOD FOR FABRICATING A VERTICAL LIGHT EMITTING DIODE (VLED) DIE HAVING EPITAXIAL STRUCTURE WITH PROTECTIVE LAYER - A method for fabricating a vertical light emitting diode (VLED) die includes the steps of: providing a substrate; forming an epitaxial structure on the substrate; forming an electrically insulative insulation layer covering the lateral surfaces of the epitaxial structure; forming an electrically non-conductive material on the electrically insulative insulation layer; and forming a mirror on the p-doped layer, with the electrically insulative insulation layer configured to protect the epitaxial structure during formation of the mirror. | 02-20-2014 |
20140048766 | METHOD FOR FABRICATING LIGHT EMITTING DIODE (LED) DICE USING BOND PAD DAM AND WAVELENGTH CONVERSION LAYERS - A method for fabricating light emitting diode (LED) dice includes the step of forming a light emitting diode (LED) die having a multiple quantum well (MQW) layer configured to emit electromagnetic radiation, and a confinement layer on the multiple quantum well (MQW) layer having a wire bond pad. The method also includes the steps of forming a dam on the wire bond pad configured to protect a wire bond area on the wire bond pad, forming an adhesive layer on the confinement layer and the wire bond pad with the dam protecting the wire bond area, and forming a wavelength conversion layer on the adhesive layer. A light emitting diode (LED) die includes the dam on the wire bond pad, the adhesive layer on the confinement layer and the wavelength conversion layer on the adhesive layer configured to convert the electromagnetic radiation to a second spectral region. | 02-20-2014 |
20130337590 | METHOD FOR FABRICATING SIDE BY SIDE LIGHT EMITTING DIODE (LED) HAVING SEPARATE ELECTRICAL AND HEAT TRANSFER PATHS - A method for fabricating a light emitting diode includes the steps of providing a thermal conductive substrate having an electrical isolation layer, forming an anode via and a cathode via side by side on a first side of the substrate part way through the substrate, forming an anode through interconnect in the anode via and a cathode through interconnect in the cathode via, thinning the substrate from a second side of the substrate to the anode through interconnect and the cathode through interconnect, and mounting a LED chip to the first side in electrical communication with the cathode through interconnect and the anode through interconnect. | 12-19-2013 |
20130334982 | METHOD FOR GUIDING CURRENT IN A LIGHT EMITTING DIODE (LED) DEVICE - Methods for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current-guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a substrate) may be provided. For some embodiments, both a current-guiding structure and second current path may be provided. | 12-19-2013 |
20130248816 | Light Emitting Diode (LED) Die Having Recessed Electrode And Light Extraction Structures And Method Of Fabrication - A light emitting diode (LED) die includes a semiconductor substrate having an n-type confinement layer, a multiple quantum well (MQW) layer in electrical contact with the n-type confinement layer configured to emit electromagnetic radiation, a p-type confinement layer in electrical contact with the multiple quantum well (MQW) layer; multiple light extraction structures on the n-type confinement layer configured to scatter the electromagnetic radiation; and an electrode in a recess embedded in the n-type confinement layer proximate to the light extraction structures. A method of fabrication includes: forming the semiconductor substrate; forming a recess in the n-type confinement layer having sidewalls and a planar bottom surface; forming an electrode in the recess comprising a conductive material conforming to the sidewalls and to the bottom surface of the recess; planarizing the electrode; and forming a plurality of light extraction structures in the n-type confinement layer proximate to the electrode. | 09-26-2013 |
20130240834 | METHOD FOR FABRICATING VERTICAL LIGHT EMITTING DIODE (VLED) DICE WITH WAVELENGTH CONVERSION LAYERS - A method for fabricating vertical light emitting diode (VLED) dice includes the steps of: forming a light emitting diode (LED) die having a multiple quantum well (MQW) layer configured to emit electromagnetic radiation in a first spectral region; forming a confinement layer on the multiple quantum well (MQW) layer; forming an adhesive layer on the confinement layer; and forming a wavelength conversion layer on the adhesive layer configured to convert the electromagnetic radiation in the first spectral region to output electromagnetic radiation in a second spectral region. | 09-19-2013 |
20130065327 | METHOD AND SYSTEM FOR FABRICATING LIGHT EMITTING DIODE (LED) DICE WITH WAVELENGTH CONVERSION LAYERS HAVING CONTROLLED COLOR CHARACTERISTICS - A method for fabricating light emitting diode (LED) dice includes the steps of coating a transparent substrate with a wavelength conversion material, continuously evaluating a correlated color temperature (CCT) of the output electromagnetic radiation produced by the wavelength conversion material and comparing the correlated color temperature (CCT) to a target correlated color temperature (CCT), and controlling the coating step responsive to feedback from the evaluating and comparing step to adjust the correlated color temperature (CCT) to achieve the target correlated color temperature (CCT). A system for fabricating light emitting diode (LED) dice includes a coating system, a monitoring system, and a control system configured to control the coating system to adjust the correlated color temperature (CCT) of the wavelength conversion material on the transparent substrate to achieve the target correlated color temperature (CCT). | 03-14-2013 |
20130062646 | SYSTEM AND METHOD FOR FABRICATING LIGHT EMITTING DIODE (LED) DICE WITH WAVELENTH CONVERSION LAYERS - A system for fabricating light emitting diode (LED) dice includes a wavelength conversion layer contained on a substrate on an adhesive layer configured to have reduced adhesiveness upon exposure to a physical energy, such as electromagnetic radiation or heat. The system also includes a curing apparatus configured to reduce the adhesiveness of the adhesive layer to facilitate removal of the wavelength conversion layer from the substrate, and an attachment apparatus configured to remove the wavelength conversion layer from the substrate and to attach the wavelength conversion layer to a light emitting diode (LED) die. A method for fabricating light emitting diode (LED) dice includes the steps of exposing the adhesive layer on the substrate to the physical energy to reduce the adhesiveness of the adhesive layer, removing the wavelength conversion layer from the substrate, and attaching the wavelength conversion layer to the light emitting diode (LED) die. | 03-14-2013 |
20130062640 | LIGHT EMITTING DIODE (LED) PACKAGE HAVING WAVELENGTH CONVERSION MEMBER AND WAFER LEVEL FABRICATION METHOD - A light emitting diode (LED) package includes a substrate and a light emitting diode (LED) die on the substrate configured to emit electromagnetic radiation in a first spectral region. The (LED) package also includes a dielectric layer on the (LED) die and a wavelength conversion member on the dielectric layer configured to convert the electromagnetic radiation in the first spectral region to electromagnetic radiation in a second spectral region. The (LED) package also includes an interconnect comprising a conductive trace on the wavelength conversion member and on the dielectric layer in electrical contact with a die contact on the (LED) die and with a conductor on the substrate, and a transparent dome configured as a lens encapsulating the (LED) die. | 03-14-2013 |
20130062639 | METHOD FOR FABRICATING LIGHT EMITTING DIODE (LED) DEVICES HAVING OUTPUT WITH SELECTED CHARACTERISTICS - A method for fabricating a light emitting diode (LED) device includes the steps of forming (or providing) a plurality of LED dice, forming a plurality of wavelength conversions layers, and then evaluating at least one electromagnetic radiation emission characteristic of each LED die and at least one color characteristic of each wavelength conversion layer. The method also includes the steps of comparing the evaluated characteristic of each LED die and the evaluated characteristic of each wavelength conversion layer to a database, selecting a selected LED die and a selected wavelength conversion layer based on the evaluating and comparing steps, and then attaching the selected wavelength conversion layer to the selected LED die. | 03-14-2013 |
20130062592 | LIGHT EMITTING DIODE (LED) DICE HAVING WAVELENGTH CONVERSION LAYERS AND METHODS OF FABRICATION - A light emitting diode (LED) die includes a wavelength conversion layer having a base material, and a plurality of particles embedded in the base material including wavelength conversion particles, and reflective particles. A method for fabricating light emitting diode (LED) dice includes the steps of mixing the wavelength conversion particles in the base material to a first weight percentage, mixing the reflective particles in the base material to a second weight percentage, curing the base material to form a wavelength conversion layer having a selected thickness, and attaching the wavelength conversion layer to a die. | 03-14-2013 |
20130057178 | LIGHT EMITTING DIODE (LED) SYSTEM HAVING APPLICATION SPECIFIC INTEGRATED CIRCUIT (ASIC) AND WIRELESS SYSTEM - A light emitting diode (LED) system includes a substrate, an application specific integrated circuit (ASIC) die on the substrate having a pair of power contacts, at least one light emitting diode (LED) on the substrate controlled by the application specific integrated circuit (ASIC) die, a wireless receiver on the substrate configured to receive signals for controlling the application specific integrated circuit (ASIC) die, and a wireless transmitter in signal communication with the wireless receiver configured to send the signals. | 03-07-2013 |
20130057156 | LIGHT EMITTING DIODE (LED) SYSTEM HAVING LIGHTING DEVICE AND WIRELESS CONTROL SYSTEM - A light emitting diode (LED) system includes one or more light emitting diodes (LED), or other lighting devices, configured to provide lighting in an area, and a wireless control system configured to control the light emitting diodes (LED). The wireless control system includes at least one transmitter/receiver device in signal communication with the light emitting diode (LED), and a wireless control device operable by a user, configured to send input signals to the transmitter/receiver device for controlling the light emitting diode (LED), and to receive output signals from the transmitter/receiver device for indicating a status of the light emitting diodes (LED). | 03-07-2013 |
20130026448 | LIGHT EMITTING DIODE (LED) DIE HAVING PERIPHERAL ELECTRODE FRAME AND METHOD OF FABRICATION - A light emitting diode (LED) die includes a first-type semiconductor layer, a multiple quantum well (MQW) layer and a second-type semiconductor layer. The light emitting diode (LED) die also includes a peripheral electrode on the first-type semiconductor layer located proximate to an outer periphery of the first-type semiconductor layer configured to spread current across the first-type semiconductor layer. A method for fabricating the light emitting diode (LED) die includes the step of forming an electrode on the outer periphery of the first-type semiconductor layer at least partially enclosing and spaced from the multiple quantum well (MQW) layer configured to spread current across the first-type semiconductor layer. | 01-31-2013 |
20130001510 | OPTOELECTRONIC DEVICE HAVING CURRENT BLOCKING INSULATION LAYER FOR UNIFORM TEMPERATURE DISTRIBUTION AND METHOD OF FABRICATION - An optoelectronic device includes a conductive base, a reflective conductive layer on the conductive base, a first semiconductor layer on the conductive layer configured as a first confinement layer, an active layer on the first semiconductor layer configured to emit electromagnetic radiation, a second semiconductor layer on the active layer configured as a second confinement layer, an electrode on the second semiconductor layer, and a current blocking structure on the reflective conductive layer comprising a thin transparent insulation layer aligned with the electrode configured to block current flow from the electrode, to dissipate heat generated at an interface between the first semiconductor layer and the reflective conductive layer, and to transmit electromagnetic radiation reflected from the reflective conductive layer, | 01-03-2013 |
20120168716 | Light Emitting Diode (LED) Die Having Stepped Substrates And Method Of Fabrication - A light emitting diode (LED) die includes a first substrate having a first surface and an opposing second surface; a second substrate on the second surface of the first substrate; a p-type semiconductor layer on the first surface of the first substrate; a multiple quantum well (MQW) layer on the p-type semiconductor layer configured to emit light; and an n-type semiconductor layer on the multiple quantum well (MQW) layer. | 07-05-2012 |
20120168714 | VERTICAL LIGHT EMITTING DIODE (VLED) DIE AND METHOD OF FABRICATION - A vertical light emitting diode (VLED) die includes a first metal having a first surface and an opposing second surface; a second metal on the second surface of the first metal; a p-type semiconductor layer on the first surface of the first metal; a multiple quantum well (MQW) layer on the p-type semiconductor layer configured to emit light; and an n-type semiconductor layer on the multiple quantum well (MQW) layer. | 07-05-2012 |
20120086035 | LED Device With A Light Extracting Rough Structure And Manufacturing Methods Thereof - A light emitting diode device includes a substrate, one or more light emitting diode chips on the substrate configured to emit electromagnetic radiation, and a lens configured to encapsulate the light emitting diode chips having a surface with a micro-roughness structure. The micro-roughness structure functions to improve the light extraction of the electromagnetic radiation and to direct the electromagnetic radiation outward from the lens. | 04-12-2012 |
20110309390 | Lighting Device Comprising Leds With Phosphor Layers - A lighting device comprising LEDs with phosphor layers includes a plurality of LED sets which can emit light with a peak emission wavelength between 360 nm and 490 nm; and a plurality of sets of phosphor layers covering the corresponding LED sets among the plurality of LED sets. At least two of the plurality of LED sets respectively have peak emission wavelength different from each other. The dominant fluorescence wavelength of at least one of the plurality of sets of phosphor layers ranges from 500 nm to 580 nm, and the dominant fluorescence wavelength of at least one of the other sets of phosphor layers ranges from 590 nm to 650 nm. | 12-22-2011 |
20100283065 | LED DEVICE WITH A LIGHT EXTRACTING ROUGH STRUCTURE AND MANUFACTURING METHODS THEREOF - The invention relates to a light emitting diode device having a light extracting rough structure. The device includes a leadframe, one or more light emitting diode chips provided on and electrically connected to the leadframe, and a lens configured to encapsulate the one or more light emitting diode chips, the lens having a surface including a micro-roughness structure. The micro-roughness structure of the lens has a roughness between 0.1 μm and 50 μm. The invention also relates to a method of manufacturing a light emitting diode device having a light extracting rough structure. | 11-11-2010 |
20100264432 | LIGHT EMITTING DEVICE WITH HIGH COLOR RENDERING INDEX AND HIGH LUMINESCENCE EFFICIENCY - A light emitting device comprises two light-emitting diode (LED) groups, a group of luminophor layers, and an input terminal. The first LED group includes at least one blue LED emitting light having a dominant wavelength in a range between 400 nm and 480 nm, and the second LED group includes at least one red-orange LED emitting light having a dominant wavelength in a range between 610 nm and 630 nm. The group of luminophor layers, which are selected from one of silicates, nitrides, and nitrogen oxides, are positioned above the first LED group and partially converts the light emitted by the first LED group into light having a dominant wavelength in a range between 500 nm and 555 nm. The input terminal is connected to the two LED groups for providing desired electric energy thereto. | 10-21-2010 |