| Semes Co., Ltd. Patent applications |
| Patent application number | Title | Published |
|---|
| 20160001332 | SUBSTRATE TREATING APPARATUS AND METHOD - The inventive concepts provide an apparatus for treating a substrate. The apparatus includes a housing proving an inner space in which a substrate is treated, a spin head supporting and rotating the substrate in the housing, an injection unit comprising a first nozzle member spraying a first treatment solution to the substrate put on the spin head, and a controller controlling the first nozzle member. The first nozzle member includes a body, a vibrator, a pump, and a power source. | 01-07-2016 |
| 20150303036 | SUBSTRATE TREATMENT APPARATUS INCLUDING SEALING MEMBER HAVING ATYPICAL SECTION - A substrate treatment apparatus includes a seal on at least one of upper or lower chambers of a process chamber. The seal hermetically closes the substrate treatment region, and may be at a location to prevent a gap from forming between the upper and lower chambers. The lower chamber includes an inner wall and an outer wall defining a groove including the seal. The inner wall has a top surface lower than that of the outer wall. The seal has an atypical cross-sectional shape with a recess facing the substrate treatment region. | 10-22-2015 |
| 20150116689 | SUPPORT UNIT AND SUBSTRATE TREATING DEVICE INCLUDING THE SAME - Provided is a method of manufacturing a support unit that supports a substrate. The method includes: providing a support plate formed of a non-conductive material and supporting a substrate; providing a base plate disposed below the support plate and formed of a material including a conductive material; and depositing a metallic layer at a bottom of the support plate and coupling the metallic layer and the base plate through brazing. | 04-30-2015 |
| 20140319121 | SUPPORTING UNIT AND SUBSTRATE TREATMENT APPARATUS - Provided is a supporting unit supporting a substrate. The supporting unit includes a body including a plurality of heating regions and disposed with the substrate on a top surface thereof and a heating unit heating the body. Herein, the heating unit includes heating lines provided in the plurality of heating regions, respectively, to control temperatures of the plurality of heating regions independently from one another, terminals provided to the body and receiving power from the outside, and connecting lines connecting the heating lines to the terminals mutually corresponding to one another. Also, the terminals are disposed in one of the plurality of heating regions in a top view. | 10-30-2014 |
| 20140298669 | APPARATUS AND METHOD FOR DRYING SUBSTRATES - A method for drying substrates using isopropyl alcohol (IPA) includes: a pre-stage in which heated fluid is injected to a bottom surface of a substrate to raise a temperature of the substrate simultaneously to injection of an organic solvent to a top surface of the substrate and injection of a dry gas to the top surface thereof to improve a vaporization power of the organic solvent; and a final stage in which the injection of the heated fluid is stopped and the organic solvent and the dry gas are injected to the top surface of the substrate. | 10-09-2014 |
| 20140290698 | CHEMICAL SUPPLYING UNIT, SUBSTRATE TREATMENT APPARATUS, AND METHOD OF TREATING SUBSTRATE USING THE SUBSTRATE TREATMENT APPPARATUS - Provided is a substrate treatment apparatus including a housing, a supporting unit located inside the housing and supporting a substrate, a nozzle unit supplying chemicals to the substrate disposed on the supporting unit, and a chemical supplying unit supplying the chemicals to the nozzle unit. Herein, the chemical supplying unit includes a chemical supply source, a first tank and a second tank storing the chemicals, a chemical supplying line supplying the chemicals from the chemical supply source to the first tank and the second tank, a chemical discharge line supplying the chemicals from the first tank and the second tank to the nozzle unit, a circulation line allowing the chemicals to circulate through the first tank and the second tank, respectively, a member installed on the circulation line, and a controller controlling the member. | 10-02-2014 |
| 20140290093 | RECYCLING UNIT AND SUBSTRATE TREATING APPARATUS - The substrate treating apparatus includes a drying chamber in which an organic solvent remaining on a substrate is dissolved by using a fluid, and a recycling unit including a separator for separating the organic solvent from the fluid discharged from the drying chamber to recycle the fluid. The separator includes a distiller in which a fluid containing an organic solvent having a first concentration is introduced, a heating unit heating a fluid containing an organic solvent having a second concentration discharged from the distiller, and supplying an evaporated fluid containing an organic solvent having a third concentration into the distiller, and a condensation unit liquefying a fluid containing an organic solvent having a fourth concentration discharged from the distiller. The organic solvent has the second concentration, the first concentration, the third concentration, and the fourth concentration which are successively lowered in concentration. | 10-02-2014 |
| 20140290092 | RECYCLING UNIT, SUBSTRATE TREATING APPARATUS AND RECYCLING METHOD USING THE RECYCLING UNIT - The substrate treating apparatus includes a process chamber in which an organic solvent remaining on a substrate is dissolved by using a fluid, that is provided as a supercritical fluid, to dry the substrate and a recycling unit including a recycler separating the organic solvent from the fluid discharged from the process chamber to recycle the fluid. The recycler includes a column having a space in which an absorbent for absorbing the organic solvent is stored, a supply tube supplying the fluid discharged from the process chamber into the space of the column, a discharge tube discharging the fluid from which the organic solvent is separated in the column, a gas supply tube supplying a purge gas into the column so that the organic solvent is separated from the absorbent, and an exhaust tube exhausting the purge gas containing the organic solvent to the outside of the column. | 10-02-2014 |
| 20140238443 | NOZZLE ASSEMBLY, SUBSTRATE TREATMENT APPARATUS INCLUDING THE NOZZLE ASSEMBLY, AND METHOD OF TREATING SUBSTRATE USING THE ASSEMBLY - Provided is a substrate treatment apparatus. The apparatus includes a chuck supporting a substrate and being rotatable, a container surrounding the chuck and collecting chemicals scattered due to rotations of the substrate, and a first spray nozzle spraying the chemicals to the substrate. | 08-28-2014 |
| 20140152966 | FACILITY AND METHOD FOR TREATING SUBSTRATE - Provided is a method of a substrate treatment. The method includes providing an operation module with substrates contained in a lot and performing an operation treatment thereon and performing a test treatment on the substrates completed with the operation treatment in a test module. The performing of the test treatment includes determining a substrate to be tested, which is provided to the test module, to allow the test treatment to be completed within an operation treatment time for the substrates in a unit lot. | 06-05-2014 |
| 20140144584 | PLASMA ANTENNA AND APPARATUS FOR GENERATING PLASMA HAVING THE SAME - Provided are a plasma antenna and a plasma generating apparatus including the same. The plasma antenna includes a first antenna inducing electromagnetic fields by using an RF signal, a second antenna inducing electromagnetic fields by using the RF signal, and a capacitor connected between an input terminal of the first antenna and an input terminal of the second antenna. | 05-29-2014 |
| 20140060738 | APPARATUS FOR TREATING SUBSTRATE - Provided is a substrate treating apparatus using plasma. A substrate treating apparatus includes a chamber having a treating space therein, a support member disposed in the chamber to support the substrate, a gas supply unit supplying a gas into the chamber, and a plasma source disposed on an upper portion of the camber, the plasma source including an antenna generating plasma from the gas supplied into the chamber, wherein the chamber includes a housing having an opened top surface, the housing having a treating space therein, and a dielectric substance assembly covering the opened top surface of the housing, and wherein the dielectric substance assembly includes a dielectric substance window and a reinforcement film having strength greater than that of the dielectric substance window. | 03-06-2014 |
| 20140060575 | SUBSTRATE TREATING METHOD - Provided is a substrate treating method. The substrate treating method may include treating a substrate by using a chemical solution; rinsing the substrate by using pure water after treating the substrate by using the chemical solution; and treating the substrate by using an organic solvent, wherein the substrate treating method further includes coating the substrate with a hydrophobic membrane between the treating of the chemical solution and the treating of the organic solvent. | 03-06-2014 |
| 20140034240 | APPARATUS FOR TREATING SUBSTRATE - Provided is a substrate treatment apparatus using plasma. The substrate treatment apparatus includes a housing having an inner space in which a substrate is treated, a support member disposed within the housing to support the substrate, a gas supply unit supplying a gas into the housing, a plasma source generating plasma from the gas supplied into the housing, and a baffle unit disposed to surround the support member within the housing, the baffle unit including a baffle in which through holes for exhausting the gas into the inner space of the housing are defined. The baffle is divided into a plurality of areas when viewed from an upper side, and each of portions of the plurality of areas is formed of a metallic material, and each of the other portions of the plurality of areas is formed of a nonmetallic material. | 02-06-2014 |
| 20130284209 | APPARATUS AND METHOD FOR CLEANING SUBSTRATES - The substrate cleaning apparatus includes a first process chamber in which a liquid treating process is performed on a substrate by supplying a treating solution, a second process chamber in which a drying process is performed on the substrate, and a carrying unit carrying the substrate between the first process chamber and the second process chamber. The first process chamber includes a liquid treating housing providing a space in which the liquid treating process is performed on the substrate, a spin chuck supporting the substrate within the liquid treating housing, and a liquid supply member supplying the treating solution onto the substrate supported by the spin chuck. The second process chamber includes a drying housing providing a space in which the substrate is dried, a substrate support member supporting the substrate within the drying housing, and a heater heating the substrate. | 10-31-2013 |
| 20130284093 | SUBSTRATE TREATING APPARATUS - Provided is a substrate treating apparatus. The substrate treating apparatus includes a process chamber providing an inner space in which a substrate is treated, a substrate support member disposed within the process chamber to support the substrate, a showerhead disposed to face the substrate support member and partitioning the inner space into an upper space and a lower space, the showerhead having a plasma supply hole through which the upper space and the lower space communicate with each other, an excitation gas supply unit supplying an excitation gas into the upper space, a process gas supply unit supplying a process gas into the lower space, and a microwave apply unit applying a microwave into the upper space. | 10-31-2013 |
| 20130278136 | ANTENNA STRUCTURE AND PLASMA GENERATING DEVICE - An antenna structure includes four induction antennas which have the same structure, are connected in parallel and are disposed to be overlapped. The induction antennas include an external upper section arranged on a first quadrant of a first layer, an internal upper section connected to the external upper section and arranged on a second quadrant of the first layer, an internal lower section connected to the internal upper section and arranged on a third quadrant of a second layer arranged on a lower part of the first layer, and an external lower section connected to the internal lower section and arranged on a fourth quadrant of the second layer. An RF power is supplied to one end of the external upper section, and the other end of the external lower section is grounded. | 10-24-2013 |
| 20130255728 | APPARATUS AND METHOD TREATING SUBSTRATE - A substrate treating apparatus is provided which includes a housing which provides a space in which a process is performed; a spin head which supports and rotates a substrate; and a spray unit which sprays a fluid on the substrate. The spray unit comprises a first nozzle mistily spraying a first fluid; and second nozzle spraying a second fluid. | 10-03-2013 |
| 20130255724 | APPARATUS FOR TREATING SUBSTRATE - A substrate treating apparatus is provided which includes a treatment container which provides a space in which a substrate is washed; a substrate support member which is included in the space and supports the substrate; a spray member which selectively sprays a plurality of fluids on the substrate seated on the substrate support member. The treatment container comprises a plurality of recovery containers the entrances of which are stacked in an up-and-down direction to receive a fluid within the space; a first elevation member which moves the plurality of recovery containers in an up-and-down direction; and a second elevation member which relatively moves a part of the plurality of recovery containers in an up-and-down direction with respect to the remaining recovery containers. | 10-03-2013 |
| 20130220550 | PLASMA BOUNDARY LIMITER UNIT AND APPARATUS FOR TREATING SUBSTRATE - Provided is an apparatus for treating a substrate. The apparatus comprises a plasma boundary limiter unit disposed within a process chamber to surround a discharge space defined above a support unit. The plasma boundary limiter unit comprises a plurality of plates disposed along a circumference of the discharge space, and the plurality of plates are spaced apart from each other along the circumference of the discharge space so that a gas within the discharge space flows to the outside of the discharge space through passages provided between the adjacent plates. | 08-29-2013 |
| 20130108975 | SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING METHOD | 05-02-2013 |
| 20130105082 | SUBSTRATE PROCESSING DEVICE AND IMPEDANCE MATCHING METHOD | 05-02-2013 |
| 20130104943 | SUBSTRATE TREATING APPARATUS AND CHEMICAL RECYCLING METHOD | 05-02-2013 |
| 20130084404 | APPARATUSES AND METHODS FOR TREATING SUBSTRATE - Provided is an apparatus and method for treating a substrate, and more particularly, an apparatus and method for treating a substrate which performs a patterning process. The substrate treating apparatus includes a stage on which a substrate is placed, a discharge unit that discharges ink to form lines on the substrate placed on the stage, a solidifying unit that solidifies the discharged ink, and a transfer unit moving the stage or moving the discharge unit and the solidifying unit. | 04-04-2013 |
| 20130084391 | NOZZLE UNIT, AND APPARATUS AND METHOD FOR TREATING SUBSTRATE WITH THE SAME - Provided is a substrate treatment apparatus. The substrate treatment apparatus includes a process chamber, a support unit disposed within the process chamber to support a substrate, and a nozzle unit disposed within the process chamber to spray gas. The nozzle unit includes a first nozzle spraying process gas, and a second nozzle spraying blocking gas onto an inner wall of the process chamber or an area adjacent to the support unit to prevent the process gas from being deposited on the inner wall of the process chamber or the support unit. | 04-04-2013 |
| 20130081658 | APPARATUS AND METHOD FOR TREATING SUBSTRATE - Provided are an apparatus and method for treating a substrate through a supercritical process. The apparatus includes a housing providing a space for performing a process, and a plurality of support members vertically arranged in the housing at predetermined intervals to support edges of substrates, respectively. | 04-04-2013 |
| 20130074359 | APPARATUS AND METHOD FOR DRYING SUBSTRATES - A method for drying substrates using isopropyl alcohol (IPA) includes: a pre-stage in which heated fluid is injected to a bottom surface of a substrate to raise a temperature of the substrate simultaneously to injection of an organic solvent to a top surface of the substrate and injection of a dry gas to the top surface thereof to improve a vaporization power of the organic solvent; and a final stage in which the injection of the heated fluid is stopped and the organic solvent and the dry gas are injected to the top surface of the substrate. | 03-28-2013 |
| 20130029282 | APPARATUS AND METHOD FOR TREATING SUBSTRATE - Provided are an apparatus and method for treating a substrate. More particularly, an apparatus and method for treating a substrate through a supercritical process are provided. The apparatus includes: a housing having an entrance in a predetermined surface thereof and providing a space for performing a high pressure process; a support member disposed in the housing to support a substrate; a door for opening and closing the entrance; and a pressing member configured to apply a force to the door so as to close the housing during the high pressure process. | 01-31-2013 |
| 20130028690 | APPARATUS AND METHOD FOR TREATING SUBSTRATE - Provided are an apparatus and method for treating a substrate. More particularly, an apparatus and method for treating a substrate through a supercritical process are provided. The apparatus includes a housing having an entrance in a side thereof and providing a space for performing a process, a door for opening and closing the entrance, and a support member disposed on the door to receive a substrate thereon. | 01-31-2013 |
| 20130026135 | APPARATUSES, SYSTEMS AND METHODS FOR TREATING SUBSTRATE - Provided is an apparatus, system and method for treating a substrate, and more particularly, a substrate treating apparatus having a cluster structure, a substrate treating system, and a substrate treating method using the substrate treating system. The substrate treating apparatus includes a load port on which a container containing a substrate is installed, a plurality of process modules treating the substrate, a transfer module disposed between the load port and the process modules, and transferring the substrate between the container and the process modules, and a buffer chamber disposed between neighboring ones of the process modules, and providing a space for carrying the substrate between the neighboring process modules. | 01-31-2013 |
| 20130025155 | APPARATUS AND METHOD FOR TREATING SUBSTRATE - Provided are an apparatus and method for treating a substrate. Specifically, provided are an apparatus and method for treating a substrate through a supercritical process. The apparatus includes: a housing providing a space for performing a process; a support member disposed in the housing to support a substrate; a supply port configured to supply a process fluid to the housing; a shield member disposed between the supply port and the support member to prevent the process fluid from being directly injected to the substrate; and an exhaust port configured to discharge the process fluid from the housing. | 01-31-2013 |
| 20130005056 | METHOD AND APPARATUS FOR PROCESSING WAFER EDGE PORTION - Provided is a method for processing a wafer edge portion using photolithograph equipment. The method includes placing a wafer on a support plate, inspecting a bead removal state of an edge portion of the wafer placed on the support plate, and exposing the edge portion of the wafer placed on the support plate to light. The inspecting of the bead removal state is performed by capturing first images from the wafer placed on the support plate and inspecting the first images. | 01-03-2013 |
| 20130000144 | APPARATUS FOR TREATING SUBSTRATE AND METHOD FOR DISCHARGING SUPERCRITICAL FLUID - Provided are an apparatus for treating a substrate and a method for discharge a supercritical fluid, and more particularly, an apparatus for treating a substrate using a supercritical fluid and a method for discharging the supercritical fluid using the same. The apparatus for treating the substrate includes a container for providing a supercritical fluid, a vent line through which the supercritical fluid is discharged from the container, and a freezing prevention unit disposed in the vent line to prevent the supercritical fluid from being frozen. | 01-03-2013 |
| 20130000140 | APPARATUS AND METHOD FOR TREATING SUBSTRATE - Provided are an apparatus and method for treating a substrate, and more particularly, to an apparatus and method for treating a substrate using a supercritical fluid. The apparatus for treating a substrate includes a process chamber in which an organic solvent remaining on a substrate is dissolved using a fluid provided as a supercritical fluid to dry the substrate and a recycling unit in which the organic solvent is separated from the fluid discharged from the process chamber to recycle the fluid. | 01-03-2013 |
| 20120305191 | APPARATUS FOR TREATING SUBSTRATE - Provided is an apparatus for treating a substrate. The apparatus for treating a substrate may include a process chamber having a space formed therein, a chuck positioned in the process chamber and supporting a substrate, a gas supply unit supplying reaction gas into the process chamber, an upper electrode positioned above the chuck and applying high frequency power to the reaction gas, and a heater installed in the upper electrode and heating the upper electrode. | 12-06-2012 |
| 20120305028 | BUFFER UNITS, SUBSTRATE PROCESSING APPARATUSES, AND SUBSTRATE PROCESSING METHODS - Provided is a buffer unit, which includes a frame including a base plate, a first vertical plate, and a second vertical plate, wherein the first and second vertical plates are spaced apart from each other on the base plate, a first buffer on which a photomask is placed, the first buffer being allowed to be reversed between the first and second vertical plates; and a plurality of driving parts disposed at outsides of the first and second vertical plates, and driving the first buffer to grip and reverse the photomask placed on the first buffer. | 12-06-2012 |
| 20120305024 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - Provided is a substrate processing apparatus. The substrate processing apparatus includes an index part including a port on which a container containing a substrate is placed and an index robot, a processing part for processing the substrate, and a buffer unit disposed between the processing part and the index part to allow the substrate transferred between the processing part and the index part to be temporarily stayed therein. The processing part includes a glue removal processing module, a substrate cooling processing module, a heat processing module, and a functional water processing module which are disposed along a transfer passage for transferring the substrate. | 12-06-2012 |
| 20120168081 | Adjustable Capacitor, Plasma Impedance Matching Device, Plasma Impedance Matching Method, And Substrate Treating Apparatus - Disclosed is a substrate treating apparatus which comprises a process chamber; an electrode configured to generate plasma from a gas supplied into the process chamber; an RF power supply configured to output an RF power; a transmission line configured to transmit the RF power to the electrode from the RF power supply; an impedance matching unit connected to the transmission line and configured to match plasma impedance; and a controller configured to output a control signal to the impedance matching unit, wherein the impedance matching unit comprises an adjustable capacitor having a plurality of capacitors and a plurality of switches corresponding to the plurality of capacitors, the plurality of switches being switched on/off according to the control signal so that capacitance of the adjustable capacitor is adjusted. | 07-05-2012 |
| 20120100292 | GAS INJECTION UNIT AND A THIN-FILM VAPOUR-DEPOSITION DEVICE AND METHOD USING THE SAME - Provided are a gas injection unit and apparatus and method for depositing a thin layer using the same. The gas injection unit includes: an inner pipe through which a reaction gas is introduced; an outer pipe enclosing the inner pipe, through which a cooling fluid cooling the reaction gas in the inner pipe flows; and injection pipes injecting the reaction gas in the inner pipe to an outside of the outer pipe. | 04-26-2012 |
| 20110313565 | Substrate Processing Apparatus And Method For Loading And Unloading Substrates - Provided is a substrate processing apparatus for loading substrates such as solar cell substrates on a tray in substrate processing equipment for processing a large number of substrates. The substrate processing apparatus includes: a tray carrying unit configured to receive and carry a tray; a substrate loading conveyor unit on which substrates to be loaded on a tray are arranged in a line; a substrate unloading conveyor unit on which substrates unloaded from a tray are arranged in a line; a first substrate carrying robot configured to pick up substrates from the substrate loading conveyor unit and carry the substrates to a tray placed on the tray carrying unit; and a second substrate carrying robot configured to pick up substrates from a tray placed on the tray carrying unit and carry the substrates to the substrate unloading conveyor unit. | 12-22-2011 |
| 20110312189 | SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING METHOD - A substrate treating apparatus is provided. The substrate treating apparatus includes a loading/unloading unit, a process unit in which a substrate treating process is performed, a loadlock unit disposed between the loading/unloading unit and the process unit, and a carrying member transferring a substrate between the process unit and the loadlock unit. Herein, the carrying member is provided in the process unit and the loadlock unit, and the loading/unloading unit, the loadlock unit, and the process unit are sequentially disposed. | 12-22-2011 |
| 20110308458 | Thin Film Deposition Apparatus - Provided is a thin film deposition apparatus. The thin film deposition apparatus includes a substrate support unit configured to support a substrate; and a shower head disposed above the substrate support unit to supply a process gas to the substrate. The shower head includes: an upper plate including a plurality of gas channels forming process gas flow paths and gas injection holes formed in the gas channels, high-frequency power being applied to the upper plate to excite the process gas into plasma; a baffle plate disposed under the upper plate and including a plurality of holes to uniformly distribute the process gas; and an injection plate disposed under the baffle plate to inject the process gas supplied through the baffle plate to a substrate. | 12-22-2011 |
| 20110264260 | SUBSTRATE-PROCESSING APPARATUS AND METHOD OF TRANSFERRING SUBSTRATE IN THE SAME - Provided is a substrate-processing apparatus including a transfer member loading and taking out a substrate to and from a storage member, and a control unit controlling the transfer member. The transfer member includes a plurality of transfer arms and an arm-driving part moving the respective transfer arms horizontally, and substrates are loaded on the respective transfer arms. The control unit controls a movement velocity and a position of the transfer member and compares movement velocity profiles of the transfer arms, so as to control movement velocities of the respective transfer arms. Accordingly, the simultaneously driven transfer arms simultaneously arrive at target points, and thus the substrate-processing apparatus reduces transfer time and improves productivity. | 10-27-2011 |
| 20110220286 | SOLUTION SUPPLYING UNIT AND SUBSTRATE TREATING APPARATUS HAVING THE SAME - A solution supplying unit includes a body, a first supplying tube and a second supplying tube. The body includes a chamber having a substantially circular cross-section to receive a solution and an out-flowing part connected to the chamber to flow out the solution. The first supplying tube is disposed at a side of the body, tangentially connected to the chamber, and supplying a first solution into the chamber to rotate the first solution in the chamber. The second supplying tube has an end portion, and supplying a second solution into the chamber to mix the first solution with the second solution. The end portion is formed through the body and is adjacent to a central axis of the body. | 09-15-2011 |
| 20110153062 | SUBSTRATE-PROCESSING APPARATUS AND METHOD OF TRANSFERRING SUBSTRATE IN THE SAME - Provided is a substrate-processing apparatus including a storage member, a transfer member, and a control unit. The transfer member includes a plurality of transfer arms that load or pick up a substrate to or from the storage member. The control unit controls velocity of the transfer arms such that the simultaneously driven transfer arms simultaneously arrive at target points. Accordingly, the transfer member loads or takes out a plurality of wafers at once to or from the storage member, so that the substrate-processing apparatus reduces transfer time and improves productivity. | 06-23-2011 |
| 20110135428 | SUBSTRATE-PROCESSING APPARATUS AND METHOD OF TRANSFERRING SUBSTRATE IN THE SAME - Provided is a substrate-processing apparatus including a plurality of process chambers, a buffer unit, and a transfer member. The transfer member transfers the substrate between the process chambers and the buffer unit, and collects the substrates processed in at least two of the process chambers where processes are simultaneously finished, to transfer the processed substrates to the buffer unit at once. Accordingly, a number of times during which the transfer member transfers substrates is decreased, so that the substrate-processing apparatus reduces the process time and improves the productivity. | 06-09-2011 |
| 20110097247 | METHOD AND APPARATUS FOR GENERATING A CARBON NANOTUBE - In an apparatus and method of generating a carbon nanotube (CNT), a process chamber is heated to a target temperature and a catalyst powder is supplied into the heated process chamber. The catalyst powder moves in a first direction in the process chamber. A source gas is supplied into the process chamber in a second direction opposite to the first direction, so that the source gas delays the movement of the catalyst powder in the first direction and is reacted with the catalyst powder in the process chamber to thereby produce the CNT in the process chamber. Accordingly, the flow of the source gas against the flow of the catalyst powder reduces the drop velocity of the catalyst powder. Therefore, the source gas and the catalyst powder may be reacted with each other for a sufficiently long time. | 04-28-2011 |
| 20100326476 | METHOD FOR PROCESSING A SUBSTRATE AND APPARATUS FOR PERFORMING THE SAME - An apparatus for processing substrate includes a spin chuck, a first nozzle and a second nozzle. The spin chuck fixes and spins the substrate on which a photoresist layer is formed. The first nozzle is disposed over the spin chuck and provides a treatment liquid on the substrate so as to remove the photoresist layer. The second nozzle is disposed over the spin chuck and provides a mist including deionized water or hydrogen peroxide on the substrate to make contact with the treatment liquid so as to increase a temperature of the treatment liquid. Therefore, efficiency of removing the photoresist layer may be improved. | 12-30-2010 |
| 20100314380 | SUBSTRATE HEATING UNIT AND SUBSTRATE TREATING APPARATUS INCLUDING THE SAME - Provided are a substrate heating unit heating a substrate, and a substrate treating apparatus including the same. The substrate heating unit heats the substrate by transferring heat generated from a resistance heat generating member to a supporting plate. The supporting plate includes an upper plate having a central region which is thicker than an edge region thereof, and a lower plate made of a material having a thermal conductivity lower than the material of the upper plate. By a difference in the shape and material of the upper plate and lower plate, heat arrives at the substrate more rapidly in the edge region than in the central region, so that an entire surface of the substrate is heated uniformly. | 12-16-2010 |
| 20100146813 | APPARATUS AND METHOD FOR DRYING SUBSTRATES - A method for drying substrates using isopropyl alcohol (IPA) includes: a pre-stage in which heated fluid is injected to a bottom surface of a substrate to raise a temperature of the substrate simultaneously to injection of an organic solvent to a top surface of the substrate and injection of a dry gas to the top surface thereof to improve a vaporization power of the organic solvent; and a final stage in which the injection of the heated fluid is stopped and the organic solvent and the dry gas are injected to the top surface of the substrate. | 06-17-2010 |
| 20100136884 | SUBSTRATE POLISHING APPARATUS AND METHOD OF POLISHING SUBSTRATE USING THE SAME - Provided are a substrate polishing apparatus and a method of polishing a substrate using the same. The substrate polishing apparatus includes a substrate supporting member, a polishing unit, and a control unit. The substrate is seated on the rotatable substrate supporting member. The polishing unit includes a rotatable and swingable polishing pad to polish a top surface of the substrate. The control unit controls the substrate supporting member and the polishing unit during a polishing process to adjust a value of a polishing variable adjusting a polishing amount of the substrate according to a horizontal position of the polishing pad with respect to the substrate. Therefore, the substrate polishing apparatus may locally adjust the polishing amount of the substrate to improve polishing uniformity and product yield. | 06-03-2010 |
| 20100133355 | UNIT FOR SUPPLYING TREATING LIQUID, AND APPARATUS AND METHOD FOR TREATING SUBSTRATE USING THE SAME - Provided are a treating liquid supplying unit, and a substrate processing apparatus and method using the same. Temperature of treating liquid in a treating liquid pipe built into a nozzle arm can be maintained, through heat transfer between the nozzle arm and a standby port and heat transfer between the nozzle arm and a nozzle moving unit, while the nozzle arm is standing by in standby position, while processing is being performed at a processing position, and during movement between the standby position and a processing position. Thus, treating liquid supplied from a nozzle can be maintained at a predetermined temperature by the treating liquid supplying unit, and the substrate processing apparatus and method using the same. | 06-03-2010 |
| 20100130022 | NOZZLE AND APPARATUS AND METHOD FOR PROCESSING SUBSTRATE USING THE NOZZLE - A substrate processing apparatus is provided. The substrate processing apparatus includes a substrate supporting member including a spin head on which a substrate is placed, a nozzle discharging processing liquid to the substrate placed on the spin head, and a processing liquid supplying source supplying the processing liquid to the nozzle. The nozzle includes a nozzle main body that has a plurality of discrete discharging openings and an integration discharging opening. The discrete discharging openings have a slit-shaped cross section having a first length and are arrayed in series in a predetermined direction. The integration discharging opening is formed by connecting the discrete discharging openings to each other in a single slot shape having a length greater than the first length, and finally discharges the processing liquid. | 05-27-2010 |
| 20100129275 | APPARATUS FOR SYNTHESIZING CARBON NANOTUBES - Provided is an apparatus for synthesizing carbon nanotubes (CNTs). The apparatus includes: a vertical reaction chamber; a mixer which is disposed within the vertical reaction chamber and mixes a catalyst supplied from above; and a plurality of dispersion plates which vertically partition a space inside the vertical reaction chamber into a plurality of sections and uniformly disperse a source gas, which is supplied from above, into the sections. | 05-27-2010 |
| 20100126539 | SPIN HEAD, APPARATUS FOR TREATING SUBSTRATE, AND METHOD FOR TREATING SUBSTRATE - Provided is a spin head supporting a substrate and rotating the substrate. The spin head includes a body, chuck pins installed on the body and moving between supporting positions where a substrate is supported and waiting positions providing space for loading/unloading of the substrate, and a chuck pin moving unit configured to move the chuck pins. The chuck pin moving unit includes a rotation rod coupled with each of the chuck pins, a pivot pin fixing the rotation rod to the body, and a driving member rotating the rotation rod about the pivot pin as a rotation shaft to move the chuck pin from the supporting position to the waiting position. When the body rotates, the rotation rod uses reverse centrifugal force to apply force to the chuck pin from the waiting position to the supporting position. The chuck pins include first pins and second pins that alternately chuck a substrate during a process. | 05-27-2010 |
| 20100122773 | APPARATUS FOR PROCESSING SUBSTRATE AND METHOD OF MAINTAINING THE APPARATUS - Provided is an apparatus for processing a substrate. The apparatus includes a chamber, a process unit, and an exhaust member. The chamber has an inner space. The process unit is disposed at the inner space of the chamber and is movable outward from the chamber through a side of the chamber. The process unit includes an exhaust line. The exhaust member is disposed at the chamber. The exhaust member is connected to the exhaust line, and the exhaust member includes a movable exhaust port configured to be moved according to a movement of the process unit. | 05-20-2010 |
| 20100003111 | SUBSTRATE PROCESSING APPARATUS AND METHOD FOR TRANSFERRING SUBSTRATE FOR THE APPARATUS - A substrate processing apparatus includes a main load unit, a buffer load unit, and a distribution unit. The main load unit is disposed at a front side of the process module for receiving a plurality of containers each accommodating substrates. The buffer load unit receives a plurality of containers, and the distribution unit transfers a container between the main load unit and the buffer load unit. The substrate processing apparatus includes the buffer load unit as well as the main load unit, and the distribution unit is used to transfer a container between the main load unit and the buffer load unit. Therefore, substrates can be transferred to the substrate processing apparatus with less time, and thus productivity can be improved. | 01-07-2010 |
| 20090325469 | SUBSTRATE SUPPORTING UNIT AND SINGLE TYPE SUBSTRATE POLISHING APPARATUS USING THE SAME - Provided are a substrate supporting unit and a single type substrate polishing apparatus using the substrate supporting unit. During a polishing process, the bottom surface of a substrate is attached to the substrate supporting unit by vacuum suction, and during a post-cleaning process, the substrate is supported by the substrate supporting unit at a position spaced apart from the substrate supporting unit for cleaning the bottom surface of the substrate. Therefore, according to the substrate supporting unit and the substrate polishing apparatus using the substrate supporting unit, in a state where the substrate is supported by the single type substrate supporting unit, a process for polishing the top surface of the substrate and a post-process for cleaning the top and bottom surfaces of the substrate can be sequentially performed. | 12-31-2009 |
| 20090305613 | Single Type Substrate Treating Apparatus and Method - Provided are a single type substrate treating apparatus and method. A polishing unit is disposed in a process chamber for polishing a substrate chemically and mechanically, and a cleaning unit is disposed in the same process chamber for cleaning the substrate. Therefore, according to the single substrate treating apparatus and method, a polishing process and a cleaning process can be performed on a substrate in the same process chamber by a single substrate treating method in which substrates are treated one by one. | 12-10-2009 |
| 20090277471 | Apparatus and Method of Cleaning Substrate - A substrate cleaning apparatus includes a supporting plate supporting a substrate and a shielding unit that is disposed above the substrate to protect the substrate. A portion of the shielding unit, which is adjacent to a focal point where light for generating shock waves is focused, is switched. Therefore, the substrate cleaning apparatus prevents the concentration of plumes and residence beams, which are generated together with the shock waves, on a specific region of the shielding unit and further prevents the recontamination of the substrate by the damage of the shielding unit. | 11-12-2009 |
| 20090056765 | SINGLE TYPE SUBSTRATE TREATING APPARATUS AND CLEANING METHOD THEREOF - Provided is a single type substrate treating apparatus and a cleaning method the substrate treating apparatus. A cleaning process is periodically performed on a substrate support member after a series of repeated substrate treating processes is performed to remove contaminants remaining on the substrate support member and minimize thermal deformation of the substrate support member due to a high temperature chemical solution. | 03-05-2009 |
| 20090050173 | APPARATUS FOR CLEANING SUBSTRATE AND METHOD FOR CLEANING SUBSTRATE - Provided is an apparatus for cleaning a substrate. The apparatus includes a stage on which a substrate is loaded, a cleaning liquid supply unit supplying a cleaning liquid to the substrate, an oscillator transmitting sound waves to the substrate for cleaning the substrate, and at least two piezoelectric members disposed on an end portion of the oscillator at a predetermined distance apart from each other so as to generate the sound waves. | 02-26-2009 |
| 20080305031 | System and Method For Producing Carbon Nanotubes - A system for producing carbon nanotubes includes a reaction chamber in which a process is performed for producing a carbon nanotube on a synthetic substrate; a station part disposed at one side of the reaction chamber and provided with a first transporter for loading/unloading the synthetic substrate to/from the reaction chamber; a first transporter installed inside the station part for loading/unloading synthetic substrates to/from the reaction chamber; a substrate accommodating part in which a substrate to be loaded to the reaction chamber is accommodated or a synthetic substrate unloaded from the reaction chamber waits; a retrieve part for drawing out a synthetic substrate from the substrate accommodating part to retrieve a carbon nanotube produced on the synthetic substrate; a catalyst coating unit configured for coating a synthetic substrate with a catalyst before the synthetic substrate is accommodated in the substrate accommodating part of the station part; and a second transporter for transporting a synthetic substrate between the retrieve part and the substrate accommodating part and between the catalyst coating unit and the substrate accommodating part. | 12-11-2008 |
