NIHON MICRO COATING CO., LTD. Patent applications |
Patent application number | Title | Published |
20120045968 | SUBSTRATE POLISHING METHOD AND DEVICE - A substrate polishing method includes starting to rotate a circular substrate and polishing an inner peripheral edge surface of a center circular hole formed in the circular substrate into a chamfered or rounded surface by pressing the inner peripheral edge surface against a bypass polishing part of a polishing tape that is conveyed intermittently or continuously and by oscillating the bypass polishing part of the polishing tape about a direction perpendicular to a direction that the center circular hole penetrates through the circular substrate. The polishing tape is guided so as to have an advancing portion advancing toward the circular substrate, a returning portion returning from the circular substrate, and a turning-back portion between the advancing portion and the returning portion guided along a side bypass. The bypass polishing part of the polishing tape is the turning-back portion of the polishing tape. | 02-23-2012 |
20110005143 | POLISHING OIL SLURRY FOR POLISHING HARD CRYSTAL SUBSTRATE - A hard crystal substrate such as a GaN substrate or a SiC substrate is polished by using polishing oil slurry having abrading particles of artificial diamond clusters dispersed in a dispersant. The artificial diamond clusters include approximately spherical agglomerate particles with average particle size D50 of 20 nm or more and 50 nm or less, having primary particles with particle diameters of 2 nm or more and 10 nm or less. A rough polishing process is carried out first such that an average surface roughness of 0.5 nm or more and 1 nm or less is obtained, followed by a finishing process such that the average surface roughness of said surface becomes 0.2 nm or less. | 01-13-2011 |
20100293865 | METHOD OF PRODUCING POLISHING SHEET - A polishing sheet, having polishing particles fixed to a base sheet in a single-layer formation by an adhesive agent so as to be mutually separated in the direction of their plane and having cutting edges exposed and arranged to be coplanar, is produced by forming on a provisional base sheet a film of a provisional adhesive agent of a thickness smaller than the average diameter of the polishing particles, dispersing the polishing particles onto the film of the provisional adhesive agent so as to contact the provisional base sheet, pressing the base sheet covered with the adhesive agent onto the polishing particles with the adhesive agent facing towards the polishing particles, hardening the pressed adhesive agent, and removing the provisional base sheet and the film of the provisional adhesive agent. The polishing particles are charged in a same polarity when dispersed. | 11-25-2010 |
20100203809 | METHOD OF POLISHING A MAGNETIC HARD DISC SUBSTRATE - Polishing particles are made of artificial diamond produced by a shock method, having density of 3.0-3.35 g/cm | 08-12-2010 |
20100160170 | METHOD FOR POLISHING TAPE-SHAPED SUBSTRATE FOR OXIDE SUPERCONDUCTOR, OXIDE SUPERCONDUCTOR, AND BASE MATERIAL FOR OXIDE SUPERCONDUCTOR - A surface polishing method for enhancing crystal orientation on the surface of a tapelike metal substrate in order to enhance the critical current of a superconducting thin film. In an oxide superconductor comprising a tapelike substrate, an intermediate layer formed on the tapelike substrate, and an oxide superconducting thin film layer formed on the intermediate layer, the method for polishing a surface to be polished of the tapelike substrate comprises a step for polishing the surface to be polished while traveling the tapelike substrate continuously, wherein an initial polishing step and a finish polishing step are included. Ultimately, the average surface roughness Ra of the polished surface is 2 nanometer or less and the in-plane orientation Δφ is 5° or less. | 06-24-2010 |
20100112909 | METHOD OF AND APPARATUS FOR ABRADING OUTER PERIPHERAL PARTS OF A SEMICONDUCTOR WAFER - The invention provides a method of and an apparatus for abrading outer peripheral parts of a semiconductor wafer having a protective sheet adhesively attached to its surface where semiconductor elements are formed. The semiconductor wafer is held horizontally and an abrading tape held inside an abrading head is run and pressed against the outer peripheral part of the semiconductor wafer. The abrading tape has abrading particles attached to a base sheet by electrostatic spraying. | 05-06-2010 |
20100016169 | METHOD FOR POLISHING TAPE-SHAPED SUBSTRATE FOR OXIDE SUPERCONDUCTOR, OXIDE SUPERCONDUCTOR, AND BASE MATERIAL FOR OXIDE SUPERCONDUCTOR - An oxide superconductor member is composed of a tape-shaped substrate, an intermediate layer formed on this substrate and an oxide superconductor thin film layer formed on this intermediate layer. A surface of the tape-shaped substrate is polished by continuously running the tape-shaped substrate. The polishing step includes initial polishing process and finishing process which are carried out such that the average surface roughness Ra of the substrate becomes 2 nanometers or less and the in-plane directionality of the intermediate layer becomes 5° or less after the polishing step. | 01-21-2010 |
20090188170 | METHOD OF PRODUCING POLISHING MATERIAL COMPRISING DIAMOND CLUSTERS - Diamond clusters are used as a polishing material of free abrading particles, each being a combination of artificial diamond particles having primary particle diameters of 20 nm or less and impurities that are attached around these diamond particles. The density of non-diamond carbon contained in the impurities is in the range of 95% or more and 99% or less, and the density of chlorine contained in other than non-diamond carbon in the impurities is 0.5% or more and preferably 3.5% or less. The diameters of these diamond clusters are in the range of 30 nm or more and 500 nm or less, and their average diameter is in the range of 30 nm or more and 200 nm or less. Such polishing material is produced first by an explosion shock method to obtain diamond clusters and then removing the impurities such that density of non-diamond carbon contained in the impurities and density of chlorine contained in other than non-diamond carbon in the impurities become adjusted. | 07-30-2009 |
20090163122 | SYSTEM AND METHOD FOR POLISHING SURFACE OF TAPE-LIKE METALLIC BASE MATERIAL - A polishing system and a method are presented for uniformly polishing efficiently at a fast rate the surface of a tape-like metallic base material of several hundred meters in length. The polishing system is provided not only with devices for causing the base material to travel continuously and applying a specified tension in the base material but also with a first polishing device for randomly polishing the target surface and a second polishing device for carrying out a final polishing on the target surface in the direction of travel of the base material. Polishing marks are formed in the direction of travel on the target surface by the final polishing. | 06-25-2009 |
20090163117 | METHOD OF PRODUCING GLASS SUBSTRATE FOR PERPENDICULAR MAGNETIC RECORDING DISK - A glass substrate for perpendicular magnetic recording, having a surface with an average surface roughness of 2.0 Å or less and surface height variations of 1 Å or less with wavelengths in the range of 0.05 mm-0.5 mm in both radial and circumferential directions, is produced by rotating a glass substrate, supplying polishing slurry containing a specified amount of abrading particles of artificial diamond on its surface, pressing a polishing tape on the surface and causing this polishing tape to travel in a direction opposite to the direction of rotation of the glass substrate. | 06-25-2009 |
20090093192 | DEVICE FOR AND METHOD OF POLISHING PERIPHERAL EDGE OF SEMICONDUCTOR WAFER - A device for polishing the peripheral edge part of a semiconductor wafer includes a wafer stage for holding the wafer, a wafer stage unit including devices for rotating the wafer stage, causing the wafer stage to undergo a rotary reciprocating motion within the same plane as the surface of the wafer stage, and moving the wafer stage parallel to the surface, a notch polishing part for polishing the notch on the wafer and a bevel polishing part for polishing the beveled part of the wafer. Pure water is supplied to the wafer to prevent it from becoming dry as it is transported from the notch polishing part to the bevel polishing part. | 04-09-2009 |
20090092023 | CLEANING TAPE AND METHOD OF PRODUCING SAME - A cleaning tape has a base tape made of a synthetic resin and a cleaning layer formed on a surface of this base tape. The cleaning layer has a binding agent and a large number of spherical particles dispersed in the binding agent in a single particle layer. Such a cleaning tape is capable of removing very small unwanted protrusions and particles on the surface of a target object such as a magnetic hard disk without forming scratches. | 04-09-2009 |
20090054243 | METHOD OF POLISHING TAPE-SHAPED SUBSTRATE AND SUBSTRATE FOR OXIDE SUPERCONDUCTOR - A target surface of a tape-shaped substrate of an oxide superconductor with an intermediate layer formed on this target surface and an oxide superconductor thin film is polished by causing the tape-shaped substrate to continuously run. The polishing step includes an initial polishing process for carrying out random polishing of the target surface and a finishing process that is carried out after the initial polishing process for forming grooves on the target surface along the running direction of the substrate. The intermediate layer has an in-plane directionality of 7° or less. The tape-shaped substrate is fabricated by rolling nickel, a nickel alloys or stainless steel. | 02-26-2009 |
20080293332 | POLISHING PAD AND METHOD OF POLISHING - A circular polishing pad has grooves formed on the surface in a spiral pattern with its center point offset from the center of the pad. The spiral pattern is an Archimedean spiral pattern or a parabolic spiral pattern. A target object is polished by using such a polishing pad without oscillating the platen to which the polishing pad is pasted or the polishing head that holds the target object. | 11-27-2008 |