New Japan Radio Co., Ltd. Patent applications |
Patent application number | Title | Published |
20140263986 | POSITION DETECTING DEVICE USING REFLECTION TYPE PHOTOSENSOR - A position detecting device using a reflection type photosensor, comprising a reflector fitted to a moving target and having reflecting portions and non-reflecting portions arranged alternately in a moving direction of the moving target, a reflection type photosensor having a light emitting element and a light receiving element with plural light receiving portions, and an operation unit for calculating a value indicating the position of the moving target. The light receiving element comprises the first and second light receiving portions outputting signals having different phases, the second light receiving portion is divided into two regions provided at far and near sides from the light emitting element about the first light receiving portion, and the operation unit calculates the value using the one signal calculated from the output signals from the two regions and the output signal from the first light receiving portion. | 09-18-2014 |
20140191657 | COAXIAL MAGNETRON - The object of the presently disclosed embodiment is to improve heat dissipation and an overall cooling efficiency to raise a peak oscillation output. To achieve the object, there is provided a coaxial magnetron having the following configuration: Around a cathode, vanes and an anode cylinder form an anode resonant cavity, and a cylindrical side body forms an outer cavity. An input side structure having an input part and an upper structure are joined to both ends of the cylindrical side body. One end of the anode cylinder is joined to the input side structure. A groove (or step) for adjusting the distance between the structures and at the both ends is provided, and the groove is joined to the other end of the anode cylinder. | 07-10-2014 |
20140035686 | METHOD FOR VARYING OSCILLATION FREQUENCY OF HIGH FREQUENCY OSCILLATOR - The switching element is provided in a state of being electromagnetically coupled to the cavity resonator of the high frequency oscillator; the bias voltage applying terminal is connected to one electrode of the switching element; another electrode of the switching element is electrically connected to the cavity resonator (the anode shell in FIG. | 02-06-2014 |
20130306985 | SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF - An aluminum material can be used on a surface of the electrode of a semiconductor element, this aluminum layer need not be formed thick unnecessarily, a copper wire is bonded strongly to the semiconductor element irrespective of a diameter of the wire, and high heat resistance can be achieved. Silicon carbide (SiC) is used as a substrate of the semiconductor element | 11-21-2013 |
20130015336 | PHOTOSENSOR FOR POSITION DETECTING DEVICE, POSITION DETECTING DEVICE USING SAME AND POSITION DETECTING METHODAANM OHNO; FumiakiAACI Fujimino-shiAACO JPAAGP OHNO; Fumiaki Fujimino-shi JPAANM Fukui; KazuhitoAACI Fujimino-shiAACO JPAAGP Fukui; Kazuhito Fujimino-shi JP - An object of the present invention is to provide a position detecting device using a reflection type photosensor, which assures a small size and low cost and enables detection of a long distance of about 10 mm or more, and a position detecting method. The position of a moving body is detected by providing, on the moving body, a reflection plate ( | 01-17-2013 |
20120097837 | POSITION DETECTING DEVICE USING REFLECTION TYPE PHOTOSENSORS - There is provided a position detecting device using reflection type photosensors in which a position sensing of lens located not less than 1 mm apart from a sensor can be conducted. A pair of reflection type photosensors PR | 04-26-2012 |
20110076811 | Method of Manufacturing a Semiconductor Device - A manufacturing method of a semiconductor device including a protecting element with a p-n junction which can be formed in the same process as that of a p-channel junction FET while the junction FET is formed in simple manufacturing process is provided. In the method of manufacturing semiconductor device composed of compound semiconductor having a p-channel FET and protective element, an n-type channel layer | 03-31-2011 |
20110057563 | Electronic Frequency Tuning Magnetron - A highly-reliable electronic frequency tuning magnetron comprises an anode for forming a resonant cavity which is segmented into a plurality of spaces in an inner periphery side of a cylindrical anode shell, a cathode provided at the center of the anode shell along its cylindrical axial direction and an exhausted structure having a coaxial central conductor which is connected to the inside of the cavity of the anode shell and is coupled thereto in a high-frequency manner, wherein the coaxial central conductor is externally led through a wall of the exhausted structure via a through-hole and the through-hole is covered by a dielectric portion placed between an external conductor for constituting the coaxial central conductor and the central conductor, wherein a portion of the led coaxial central conductor is conductively connected to a switching element. | 03-10-2011 |