Netlist, Inc. Patent applications |
Patent application number | Title | Published |
20150070959 | MEMORY PACKAGE WITH OPTIMIZED DRIVER LOAD AND METHOD OF OPERATION - An apparatus is provided that includes a plurality of array dies and at least two die interconnects. The first die interconnect is in electrical communication with a data port of a first array die and a data port of a second array die and not in electrical communication with data ports of a third array die. The second die interconnect is in electrical communication with a data port of the third array die and not in electrical communication with data ports of the first array die and the second array die. The apparatus includes a control die that includes a first data conduit configured to transmit a data signal to the first die interconnect and not to the second die interconnect, and at least a second data conduit configured to transmit the data signal to the second die interconnect and not to the first die interconnect. | 03-12-2015 |
20140337539 | MEMORY MODULE WITH DISTRIBUTED DATA BUFFERS AND METHOD OF OPERATION - A memory module is operatable in a memory system with a memory controller. The memory module comprises a module control device to receive command signals from the memory controller and to output module command signals and module control signals. The module command signals are provided to memory devices organized in groups, each group including at least one memory device, while the module control signals are provided to a plurality of buffer circuits to control data paths in the buffer circuits. The plurality of buffer circuits are associated with respective groups of memory devices and are distributed across a surface of the memory module such that each module control signal arrives at the plurality of buffer circuits at different points in time. The plurality of buffer circuits are configured to align read data signals received from the memory devices such that the read data signals are transmitted to the memory controller from the memory module substantially aligned with each other and in accordance with a read latency parameter of the memory system. | 11-13-2014 |
20140281661 | Hybrid Memory System With Configurable Error Thresholds And Failure Analysis Capability - A system and method for configuring fault tolerance in nonvolatile memory (NVM) are operative to set a first threshold value, declare one or more portions of NVM invalid based on an error criterion, track the number of declared invalid NVM portions, determine if the tracked number exceeds the first threshold value, and if the tracked number exceeds the first threshold value, perform one or more remediation actions, such as issue a warning or prevent backup of volatile memory data in a hybrid memory system. In the event of backup failure, an extent of the backup can still be assessed by determining the amount of erased NVM that has remained erased after the backup, or by comparing a predicted backup end point with an actual endpoint. | 09-18-2014 |
20140156920 | Isolation Switching For Backup Of Registered Memory - Certain embodiments described herein include a memory system having a register coupled to a host system and operable to receive address and control signals from the host system, a volatile memory subsystem, a non-volatile memory subsystem, a controller coupled to the non-volatile memory subsystem, and a circuit coupled to the register, the volatile memory subsystem, and the controller. In a first mode of operation, the circuit is operable to selectively isolate the controller from the volatile memory subsystem, and to selectively couple the volatile memory subsystem to the register to allow data to be communicated between the volatile memory subsystem and the host system. In a second mode of operation, the circuit is operable to selectively couple the controller to the volatile memory subsystem to allow data to be communicated between the volatile memory subsystem and the non-volatile memory subsystem using the controller, and is operable to selectively isolate the volatile memory subsystem from the register. | 06-05-2014 |
20140156919 | Isolation Switching For Backup Memory - Certain embodiments described herein include a memory system having a volatile memory subsystem, a non-volatile memory subsystem, a controller coupled to the non-volatile memory subsystem, and a circuit coupled to the volatile memory subsystem, to the controller, and to a host system. In a first mode of operation, the circuit is operable to selectively isolate the controller from the volatile memory subsystem, and to selectively couple the volatile memory subsystem to the host system to allow data to be communicated between the volatile memory subsystem and the host system. In a second mode of operation, the circuit is operable to selectively couple the controller to the volatile memory subsystem to allow data to be communicated between the volatile memory subsystem and the nonvolatile memory subsystem using the controller, and the circuit is operable to selectively isolate the volatile memory subsystem from the host system. | 06-05-2014 |
20140040569 | LOAD-REDUCING CIRCUIT FOR MEMORY MODULE - A circuit is mountable on a memory module that includes a plurality of memory devices and that is operable in a computer system to perform memory operations in response to memory commands from a memory controller. The circuit comprises a register device configured to receive a set of input control/address signals associated with a respective memory command (e.g., a read command or a write command) from the memory controller and to generate a set of output control/address signals in response to the set of input control/address signals. The set of output control/address signals are provided to the plurality of memory devices. The circuit further comprises logic to monitor the memory commands from the memory controller and to selectively isolate one or more first memory devices among the plurality of memory devices from the memory controller in response to the respective memory command so as to reduce a load of the memory module to the computer system while one or more second memory devices among the plurality of memory devices are communicating with the memory controller in response to the set of output control/address signals. | 02-06-2014 |
20140040568 | MEMORY MODULE WITH DISTRIBUTED DATA BUFFERS AND METHOD OF OPERATION - A memory module is operable to communicate with a memory controller via a data bus and a control/address bus and comprises a module board; a plurality of memory devices mounted on the module board; and multiple sets of data pins along an edge of the module board. Each respective set of the multiple sets of data pins is operatively coupled to a respective set of multiple sets of data lines in the data bus. The memory module further comprises a control circuit configured to receive control/address information from the memory controller via the control/address bus and to produce module control signals. The memory module further comprises a plurality of buffer circuits each being disposed proximate to and electrically coupled to a respective set of the multiple sets of data pins. Each buffer circuit is configured to respond to the module control signals by enabling data communication between the memory controller and at least one first memory device among the plurality of memory devices and by isolating at least one second memory device among the plurality of memory devices from the memory controller. | 02-06-2014 |
20130254497 | ISOLATION SWITCHING FOR BACKUP OF REGISTERED MEMORY - Certain embodiments described herein include a memory system having a register coupled to a host system and operable to receive address and control signals from the host system, a volatile memory subsystem, a non-volatile memory subsystem, a controller coupled to the non-volatile memory subsystem, and a circuit coupled to the register, the volatile memory subsystem, and the controller. In a first mode of operation, the circuit is operable to selectively isolate the controller from the volatile memory subsystem, and to selectively couple the volatile memory subsystem to the register to allow data to be communicated between the volatile memory subsystem and the host system. In a second mode of operation, the circuit is operable to selectively couple the controller to the volatile memory subsystem to allow data to be communicated between the volatile memory subsystem and the non-volatile memory subsystem using the controller, and is operable to selectively isolate the volatile memory subsystem from the register. | 09-26-2013 |
20130254456 | ISOLATION SWITCHING FOR BACKUP MEMORY - Certain embodiments described herein include a memory system having a volatile memory subsystem, a non-volatile memory subsystem, a controller coupled to the non-volatile memory subsystem, and a circuit coupled to the volatile memory subsystem, to the controller, and to a host system. In a first mode of operation, the circuit is operable to selectively isolate the controller from the volatile memory subsystem, and to selectively couple the volatile memory subsystem to the host system to allow data to be communicated between the volatile memory subsystem and the host system. In a second mode of operation, the circuit is operable to selectively couple the controller to the volatile memory subsystem to allow data to be communicated between the volatile memory subsystem and the nonvolatile memory subsystem using the controller, and the circuit is operable to selectively isolate the volatile memory subsystem from the host system. | 09-26-2013 |
20130086309 | FLASH-DRAM HYBRID MEMORY MODULE - A memory module that is couplable to a memory controller hub (MCH) of a host system includes a non-volatile memory subsystem, a data manager coupled to the non-volatile memory subsystem, a volatile memory subsystem coupled to the data manager and operable to exchange data with the non-volatile memory subsystem by way of the data manager, and a controller operable to receive read/write commands from the MCH and to direct transfer of data between any two or more of the MCH, the volatile memory subsystem, and the non-volatile memory subsystem based on the commands. | 04-04-2013 |
20130019076 | REDUNDANT BACKUP USING NON-VOLATILE MEMORY - Data stored in a volatile memory subsystem is backed up redundantly into first and second channels of a non-volatile memory subsystem. The data is retrieved from the volatile memory subsystem upon detection of a trigger condition indicative of real or imminent power loss or reduction and multiple copies are stored in dedicated non-volatile memory channels. The stored copies may be error checked and corrected, and re-written if necessary. The redundantly backed up data can be subsequently retrieved from the non-volatile memory subsystem, error-corrected, and an error-free copy communicated to the volatile memory subsystem. | 01-17-2013 |
20120271990 | Non-Volatile Memory Module - Certain embodiments described herein include a memory system which can communicate with a host system such as a disk controller of a computer system. The memory system can include volatile and non-volatile memory and a controller which are configured such that the controller backs up the volatile memory using the non-volatile memory in the event of a trigger condition. In order to power the system in the event of a power failure or reduction, the memory system can include a secondary power source which is not a battery and may include, for example, a capacitor or capacitor array. The memory system can be configured such that the operation of the volatile memory is not adversely affected by the non-volatile memory or the controller when the volatile memory is interacting with the host system. | 10-25-2012 |
20120250386 | CIRCUIT PROVIDING LOAD ISOLATION AND NOISE REDUCTION - Certain embodiments described herein include a memory module having a printed circuit board including at least one connector configured to be operatively coupled to a memory controller of a computer system. The memory module further includes a plurality of memory devices on the printed circuit board and a circuit including a first set of ports operatively coupled to at least one memory device. The circuit further includes a second set of ports operatively coupled to the at least one connector. The circuit includes a switching circuit configured to selectively operatively couple one or more ports of the second set of ports to one or more ports of the first set of ports. Each port of the first set and the second set comprises a correction circuit which reduces noise in one or more signals transmitted between the first set of ports and the second set of ports. | 10-04-2012 |
20120239874 | METHOD AND SYSTEM FOR RESOLVING INTEROPERABILITY OF MULTIPLE TYPES OF DUAL IN-LINE MEMORY MODULES - Systems and methods are described for resolving certain interoperability issues among multiple types of memory modules in the same memory subsystem. The system provides a single data load DIMM for constructing a high density and high speed memory subsystem that supports the standard JEDEC RDIMM interface while presenting a single load to the memory controller. At least one memory module includes one or more DRAM, a bi-directional data buffer and an interface bridge with a conflict resolution block. The interface bridge translates the CAS latency (CL) programming value that a memory controller sends to program the DRAMs, modifies the latency value, and is used for resolving command conflicts between the DRAMs and the memory controller to insure proper operation of the memory subsystem. | 09-20-2012 |
20120106228 | METHOD AND APPARATUS FOR OPTIMIZING DRIVER LOAD IN A MEMORY PACKAGE - An apparatus is provided that includes a plurality of array dies and at least two die interconnects. The first die interconnect is in electrical communication with a data port of a first array die and a data port of a second array die and not in electrical communication with data ports of a third array die. The second die interconnect is in electrical communication with a data port of the third array die and not in electrical communication with data ports of the first array die and the second array die. The apparatus includes a control die that includes a first data conduit configured to transmit a data signal to the first die interconnect and not to the second die interconnect, and at least a second data conduit configured to transmit the data signal to the second die interconnect and not to the first die interconnect. | 05-03-2012 |
20110110047 | MODULE HAVING AT LEAST TWO SURFACES AND AT LEAST ONE THERMALLY CONDUCTIVE LAYER THEREBETWEEN - A module is electrically connectable to a computer system. The module includes a first surface and a first plurality of circuit packages coupled to the first surface. The module further includes a second surface and a second plurality of circuit packages coupled to the second surface. The second surface faces the first surface. The module further includes at least one thermal conduit positioned between the first surface and the second surface. The at least one thermal conduit is in thermal communication with the first plurality of circuit packages and the second plurality of circuit packages. | 05-12-2011 |
20110090749 | CIRCUIT FOR PROVIDING CHIP-SELECT SIGNALS TO A PLURALITY OF RANKS OF A DDR MEMORY MODULE - A circuit is configured to be mounted on a memory module connectable to a computer system so as to be electrically coupled to a plurality of memory devices on the memory module. The memory module has a first number of ranks of double-data-rate (DDR) memory devices activated by a first number of chip-select signals. The circuit is configurable to receive bank address signals, a second number of chip-select signals, and row/column address signals from the computer system. The circuit is further configurable to generate phase-locked clock signals in response to clock signals received from the computer system and to provide the first number of chip-select signals to the first number of ranks in response to the phase-locked clock signals, the received bank address signals, the received second number of chip-select signals, and at least one of the received row/column address signals. | 04-21-2011 |
20110085406 | CIRCUIT PROVIDING LOAD ISOLATION AND MEMORY DOMAIN TRANSLATION FOR MEMORY MODULE - A circuit is configured to be mounted on a memory module connectable to a computer system so as to be electrically coupled to a plurality of memory devices on the memory module. The memory module has a first number of ranks of double-data-rate (DDR) memory devices activated by a first number of chip-select signals. The circuit is configurable to receive bank address signals, a second number of chip-select signals, and row/column address signals from the computer system. The circuit is further configurable to generate phase-locked clock signals in response to clock signals received from the computer system, to selectively isolate one or more loads of the first number of ranks from the computer system, and to translate between a system memory domain and a physical memory domain of the memory module. | 04-14-2011 |
20110016250 | SYSTEM AND METHOD UTILIZING DISTRIBUTED BYTE-WISE BUFFERS ON A MEMORY MODULE - A memory system and method utilizing one or more memory modules is provided. The memory module includes a plurality of memory devices and a controller configured to receive control information from a system memory controller and to produce module control signals. The memory module further includes a plurality of circuits, for example byte-wise buffers, which are configured to selectively isolate the plurality of memory devices from the system memory controller. The circuits are operable, in response to the module control signals, to drive write data from the system memory controller to the plurality of memory devices and to merge read data from the plurality of memory devices to the system memory controller. The circuits are distributed at corresponding positions separate from one another. | 01-20-2011 |
20100128507 | CIRCUIT PROVIDING LOAD ISOLATION AND MEMORY DOMAIN TRANSLATION FOR MEMORY MODULE - A circuit is configured to be mounted on a memory module so as to be electrically coupled to a plurality of double-data-rate (DDR) memory devices arranged in one or more ranks on the memory module. The circuit includes a logic element, a register, and a phase-lock loop device. The circuit is configurable to respond to a set of input signals from a computer system to selectively isolate one or more loads of the plurality of DDR memory devices from the computer system and to translate between a system memory domain of the computer system and a physical memory domain of the plurality of DDR memory devices. | 05-27-2010 |
20100110642 | MODULE HAVING AT LEAST TWO SURFACES AND AT LEAST ONE THERMALLY CONDUCTIVE LAYER THEREBETWEEN - A module is electrically connectable to a computer system. The module includes a plurality of electrical contacts which are electrically connectable to the computer system. The module further includes a first surface and a first plurality of circuits coupled to the first surface. The first plurality of circuits is in electrical communication with the electrical contacts. The module further includes a second surface and a second plurality of circuits coupled to the second surface. The second plurality of circuits is in electrical communication with the electrical contacts. The second surface faces the first surface. The module further includes at least one thermally conductive layer positioned between the first surface and the second surface. The at least one thermally conductive layer is in thermal communication with the first plurality of circuits, the second plurality of circuits, and a first set of the plurality of electrical contacts. | 05-06-2010 |
20100091540 | MEMORY MODULE DECODER - A circuit is configured to be mounted on a memory module connectable to a computer system so as to be electrically coupled to a plurality of memory devices on the memory module. The plurality of memory devices has a first number of memory devices. The circuit comprises a logic element configurable to receive a set of input signals from the computer system. The circuit further comprising a register and a phase-lock loop circuit, the phase-lock loop circuit configurable to be operatively coupled to the plurality of memory devices, the logic element, and the register. The set of input signals corresponds to a second number of memory devices smaller than the first number of memory devices. | 04-15-2010 |
20090201711 | MEMORY MODULE WITH A CIRCUIT PROVIDING LOAD ISOLATION AND MEMORY DOMAIN TRANSLATION - A memory module includes a plurality of memory devices and a circuit. Each memory device has a corresponding load. The circuit is electrically coupled to the plurality of memory devices and is configured to be electrically coupled to a memory controller of a computer system. The circuit selectively isolates one or more of the loads of the memory devices from the computer system. The circuit comprises logic which translates between a system memory domain of the computer system and a physical memory domain of the memory module. | 08-13-2009 |