NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY Patent applications |
Patent application number | Title | Published |
20160076939 | PHOTODIODE AND METHOD FOR PRODUCING THE SAME, PHOTODIODE ARRAY, SPECTROPHOTOMETER AND SOLID-STATE IMAGING DEVICE - Provided is a photodiode having a high-concentration layer on its surface, in which the high-concentration layer is formed so that the thickness of a non-depleted region is larger than the roughness of an interface between silicon and an insulation film layer, and is smaller than a penetration depth of ultraviolet light. | 03-17-2016 |
20160017478 | HARD FILM FOR MACHINING TOOLS AND HARD FILM-COATED METAL MACHINING TOOL - A tool hard film that is to be disposed as coating on a surface of a tool, the tool hard film being a TiCrMoWV oxycarbide, oxynitride, or oxycarbonitride having a phase with a NaCl-type crystal structure as a main phase, the oxycarbide, oxynitride, or oxycarbonitride having fine crystals due to introduction of oxygen. | 01-21-2016 |
20150182186 | EVALUATION AID - The present invention provides an evaluation aid which can be used as a phantom (imitation lesion) when a digital X-ray image thereof is taken and then evaluation is carried out through the digital X-ray image, and especially an evaluation aid which can be used for easily evaluating image qualities of a digital X-ray image for X-ray absorption parts having different X-ray absorption ratios at once. The evaluation aid of the present invention is adapted to be used for taking a digital X-ray image thereof through which evaluation is carried out, and contains a substrate (plate-like body) including a plurality of regions having different X-ray absorption ratios; and step members provided on the plate-like body so as to correspond to the plurality of regions, respectively, each step member including a plurality of subregions having different X-ray absorption ratios. It is preferred that thicknesses and/or constituent materials of the plurality of regions of the substrate are different from each other, so that these regions have the different X-ray absorption ratios. | 07-02-2015 |
20140151853 | Ion Implantation Apparatus, Ion Implantation Method, and Semiconductor Device - In the plasma-based ion implantation for accelerating positive ions of a plasma and implanting the positive ions into a substrate to be processed on a holding stage in a processing chamber where the plasma has been excited, ion implantation is achieved in the following manner: an RF power having a frequency of 4 MHz or greater is applied to the holding stage to cause a self-bias voltage to generate on the surface of the substrate. The RF power is applied a plurality of times in the form of pulses. | 06-05-2014 |
20140146950 | EVALUATION AID AND EVALUATION DEVICE - The present invention provides an evaluation aid which can be used as a phantom (imitation lesion) when a digital X-ray dynamic image thereof is taken and then evaluation is carried out through the digital X-ray dynamic image, and especially an evaluation aid which can be used for evaluating image qualities of a digital X-ray dynamic image for X-ray absorption parts having different X-ray absorption ratios, and an evaluation device provided with such an evaluation aid. The evaluation aid of the present invention is adapted to be used for taking a digital X-ray dynamic image thereof through which evaluation is carried out, and contains a fixed plate (plate-like body) including a plurality of regions having different X-ray absorption ratios; a rotating disk (movable body) having a plurality of wires (wire rods), the rotating disk capable of rotating (moving) with respect to the fixed plate so that the plurality of wires traverse X-ray with which the fixed plate is irradiated; and a driving motor (driving portion) which rotates (moves) the rotating disk with respect to the fixed plate. It is preferred that thicknesses and/or constituent materials of the plurality of regions of the fixed plate are different from each other, so that these regions have the different X-ray absorption ratios. | 05-29-2014 |
20140027278 | MAGNETRON SPUTTERING APPARATUS - A magnetron sputtering apparatus for processing a substrate includes a target holding member for holding a target installed to face the substrate and a magnet installed at a side opposite to the substrate across the target. In the magnetron sputtering apparatus, plasma is confined on a surface of the target by forming a magnetic field on the target surface by the magnet, on the target surface, a plasma loop is formed around a region on a loop where a vertical magnetic field component perpendicular to the target does not substantially exist while a horizontal magnetic field component parallel to the target mainly exists, and the horizontal magnetic field component at all position on the loop where the horizontal magnetic field mainly exists is in a range of about 500 Gauss to 1200 Gauss. | 01-30-2014 |
20130307092 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a gate electrode which is formed on a substrate, and contains Al and Zr, a gate insulating film which is formed to cover at least the upper surface of the gate electrode, and contains Al and Zr, and an insulator layer formed on the substrate to surround the gate electrode. | 11-21-2013 |
20130235545 | MULTILAYER WIRING BOARD - In a multilayer wiring board | 09-12-2013 |
20130220451 | FLOW RATE RANGE VARIABLE TYPE FLOW RATE CONTROL APPARATUS - A pressure type flow rate control apparatus is provided wherein flow rate of fluid passing through an orifice is computed as Qc=KP | 08-29-2013 |
20130213535 | SPINAL FIXATION ROD MADE OF TITANIUM ALLOY - A spinal fixation titanium alloy rod fixes a plurality of spinal-fixing screws embedded and fixed in vertebrae of a human body. The rod is cylindrically shaped, has a sufficient length for coupling with the spinal-fixing screws, and has a diameter adjusted to 4 to 7 mm. In the titanium alloy constituting the rod, Nb content is 25 to 35 percent by weight, Ta content is such that the Nb content +0.8×Ta content ranges from 36 to 45 percent by weight, Zr content is 3 to 6 percent by weight, and the remainder is Ti and unavoidable impurities, excluding vanadium. The titanium alloy is manufactured by swaging processing at a cross-sectional reduction rate of at least 90%, and aging the swaged titanium alloy by heating at a temperature of 600 to 800K, preferably 700 to 800K, for 43.2 ks to 604.8 ks. | 08-22-2013 |
20130187283 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - Provided is a method of manufacturing a semiconductor device of a multilayer wiring structure that comprises a CF | 07-25-2013 |
20130156164 | EVALUATION AID - The present invention provides an evaluation aid which can be used as a phantom (imitation lesion) when a digital X-ray image thereof is taken and then evaluation is carried out through the digital X-ray image, and especially an evaluation aid which can be used for easily evaluating image qualities of a digital X-ray image for X-ray absorption parts having different X-ray absorption ratios at once. The evaluation aid of the present invention is adapted to be used for taking a digital X-ray image thereof through which evaluation is carried out, and contains a substrate (plate-like body) including a plurality of regions having different X-ray absorption ratios; and step members provided on the plate-like body so as to correspond to the plurality of regions, respectively, each step member including a plurality of subregions having different X-ray absorption ratios. It is preferred that thicknesses and/or constituent materials of the plurality of regions of the substrate are different from each other, so that these regions have the different X-ray absorption ratios. | 06-20-2013 |
20130154469 | CATHODE BODY, FLUORESCENT TUBE, AND METHOD OF MANUFACTURING A CATHODE BODY - Provided is a cathode body that comprises a cylindrical cup | 06-20-2013 |
20130140700 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - Provided is a method of manufacturing a TSV structure, which prevents a substrate from warping even if it is made thin. A method of manufacturing a semiconductor device comprises integrating semiconductor elements on a surface of a semiconductor substrate to form at least a part of a circuit, forming holes from the surface of the semiconductor substrate, forming an insulating film and a barrier film on an inner surface of each hole, forming a conductive metal on a surface of the barrier film to fill each hole, processing a back surface of the semiconductor substrate to reduce the thickness thereof to thereby protrude the conductive metal, and providing a SiCN film on the back surface of the semiconductor substrate. | 06-06-2013 |
20130118568 | PHOTOELECTRIC CONVERSION MEMBER - It is an object of this invention to provide a photoelectric conversion member including a heat dissipation mechanism which is more excellent in heat dissipation characteristics than conventional mechanisms. A photoelectric conversion member | 05-16-2013 |
20130112337 | SHOWER PLATE, MANUFACTURING METHOD OF THE SHOWER PLATE, AND PLASMA PROCESSING APPARATUS USING THE SHOWER PLATE - A manufacturing method of a shower plate includes inserting a green body, a degreasing body, a temporary sintered body or a sintered body of a ceramic member, which has a plurality of gas discharge holes or gas flow holes, into a longitudinal hole of a green body, a degreasing body or a temporary sintered body of the shower plate, which has been formed by power ingredients; and sintering them simultaneously. | 05-09-2013 |
20130089979 | SEMICONDUCTOR DEVICE HAVING A MULTILEVEL INTERCONNECT STRUCTURE AND METHOD FOR FABRICATING THE SAME - A multilevel interconnect structure in a semiconductor device and methods for fabricating the same are described. The multilevel interconnect structure in the semiconductor device includes a first insulating layer formed on a semiconductor wafer, a Cu interconnect layer formed on the first insulating layer, a second insulating layer formed on the Cu interconnect layer, and a metal oxide layer formed at an interface between the Cu interconnect layer and the second insulating layer. The metal oxide layer is formed by immersion-plating a metal, such as Sn or Zn, on the Cu interconnect layer and then heat-treating the plated layer in an oxidizing atmosphere. | 04-11-2013 |
20130058823 | SCREW VACUUM PUMP - A screw vacuum pump includes a male rotor, a female rotor, a stator, and a drive motor/motors. A screw gear portion of the male rotor, a screw gear portion of the female rotor, and the stator cooperatively form a gas working chamber. The stator has an inlet port and an outlet port. At least one of the male rotor and the female rotor has a rotor hollow portion which is opened on at least one end face side in a rotation-axis longitudinal direction of the male rotor and/or the female rotor. The drive motor is at least partially received in the rotor hollow portion. | 03-07-2013 |
20130031945 | METALWORKING MACHINE - A metalworking machine includes a tool for machining a workpiece metal and a cooling liquid supply unit for supplying a cooling liquid to a machining portion between the tool and the workpiece metal. The cooling liquid is formed by applying a degassing treatment that removes dissolved gases from the cooling liquid, and a hydrogenation treatment that adds hydrogen to the cooling liquid. | 02-07-2013 |
20120330038 | BIS-PHOSPHATE COMPOUND AND ASYMMETRIC REACTION USING THE SAME - A novel bis-phosphate compound is provided which can be applied to a wide range of reactive substrates and reactions as an asymmetric reaction catalyst and can realize an asymmetric reaction affording a high yield and a high enantiomeric excess. The bis-phosphate compound has a tetraaryl skeleton represented by General Formula (1). In an asymmetric reaction, an amidodiene and an unsaturated aldehyde compound are reacted with each other in the presence of the optically active bis-phosphate compound to give an optically active amidoaldehyde. The invention allows a reaction such as an asymmetric Diels-Alder reaction to proceed efficiently, which has been difficult with conventional mono-phosphate compounds. Thus, the invention enables an industrially feasible method for the production of optically active amidoaldehydes, optically active β-amino acid derivatives, optically active diamine compounds, optically active pyrrolidine derivatives and optically active dihydropyran derivatives which are useful as products such as medicines, agricultural chemicals and chemical products as well as synthesis intermediates for such products. | 12-27-2012 |
20120187499 | SEMICONDUCTOR DEVICE - This invention provides a technique advantageous to improve the operating speed of an integrated circuit. In a semiconductor device in which an n-type transistor and a p-type transistor are formed on the (551) plane of silicon, the thickness of a silicide layer which is in contact with a diffusion region of the n-type transistor is smaller than that of a silicide layer which is in contact with a diffusion region of the p-type transistor. | 07-26-2012 |
20120146102 | TRANSISTOR AND SEMICONDUCTOR DEVICE - An accumulation mode transistor has an impurity concentration of a semiconductor layer in a channel region at a value higher than 2×10 | 06-14-2012 |
20120137755 | METHOD FOR MEASUREMENT OF PROPERTIES OF ANALYTE - A measurement method that includes irradiating a void-arranged structure on which an analyte has been held with an electromagnetic wave, detecting an electromagnetic wave scattered on the void-arranged structure, and determining a property of the analyte on the basis of at least one parameter, the parameter including the amount of change in the ratio of the detected electromagnetic wave to the irradiated electromagnetic wave at a specific frequency between the presence and the absence of the analyte. | 06-07-2012 |
20120135612 | FILM FORMING METHOD, PRETREATMENT DEVICE, AND PROCESSING SYSTEM - A film forming method is disclosed in which a thin film comprising manganese is formed on an object to be processed which has, on a surface thereof, an insulating layer constituted of a low-k film and having a recess. The method comprises a hydrophilization step in which the surface of the insulating layer is hydrophilized to make the surface hydrophilic and a thin-film formation step in which a thin film containing manganese is formed on the surface of the hydrophilized insulating layer by performing a film forming process using a manganese-containing material gas on the surface of the hydrophilized insulating layer. Thus, a thin film comprising manganese, e.g., an MnOx film, is effectively formed on the surface of the insulating layer constituted of a low-k film, which has a low dielectric constant. | 05-31-2012 |
20120111394 | PHOTOELECTRIC CONVERSION DEVICE - It is an object of the present invention to provide a photoelectric conversion device having a passivation layer suitable for a structure provided with a heat dissipation mechanism. A photoelectric conversion device | 05-10-2012 |
20120102353 | DATA PROCESSING APPARATUS, DATA PROCESSING SYSTEM, MEASUREMENT SYSTEM, DATA PROCESSING METHOD, MEASUREMENT METHOD, ELECTRONIC DEVICE AND RECORDING MEDIUM - Provided is a data processing system that processes input data, comprising a data generating apparatus that generates the input data and a data processing apparatus that processes the input data generated by the data generating apparatus. The data processing apparatus includes a time interpolation section that generates time interpolated data, in which level differences between pieces of data adjacent in time are a constant value, based on the input data. | 04-26-2012 |
20120088125 | MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY - A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer and having a changeable magnetization direction with an easy axis of magnetization in a direction perpendicular to a film plane; a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer and having a fixed magnetization layer with an easy axis of magnetization in a direction perpendicular to the film plane. The first magnetic layer includes a ferrimagnetic layer having a DO | 04-12-2012 |
20120008142 | METHOD FOR MEASURING CHARACTERISTIC OF OBJECT TO BE MEASURED, STRUCTURE CAUSING DIFFRACTION PHENOMENON, AND MEASURING DEVICE - A method of attaching an object to be measured to a structure causing a diffraction phenomenon; irradiating the structure to which the object to be measured is attached and which causes the diffraction phenomenon with an electromagnetic wave; detecting the electromagnetic wave scattered by the structure causing the diffraction phenomenon; and measuring a characteristic of the object to be measured from the frequency characteristic of the detected electromagnetic wave. The object to be measured is attached directly to the surface of the structure causing the diffraction phenomenon. Thus, the method for measuring the characteristic of an object to be measured exhibits an improved measurement sensitivity and high reproducibility. A structure causing a diffraction phenomenon and used for the method, and a measuring device are provided. | 01-12-2012 |
20110307014 | SPINAL FIXATION ROD MADE OF TITANIUM ALLOY - A spinal fixation titanium alloy rod fixes a plurality of spinal-fixing screws embedded and fixed in vertebrae of a human body. The rod is cylindrically shaped, has a sufficient length for coupling with the spinal-fixing screws, and has a diameter adjusted to 4 to 7 mm. In the titanium alloy constituting the rod, Nb content is 25 to 35 percent by weight, Ta content is such that the Nb content+0.8×Ta content ranges from 36 to 45 percent by weight, Zr content is 3 to 6 percent by weight, and the remainder is Ti and unavoidable impurities, excluding vanadium. The titanium alloy is manufactured by swaging processing at a cross-sectional reduction rate of at least 90%, and aging the swaged titanium alloy by heating at a temperature of 600 to 800K, preferably 700 to 800K, for 43.2 ks to 604.8 ks. | 12-15-2011 |
20110253945 | DISPERSION OF CARBON MATERIAL AND PROCESS FOR PRODUCING SAME - The invention is directed to a carbon material dispersion, including: a fluorinated carbon material having a fluorinated surface formed by bringing a treatment gas with a fluorine concentration of 0.01 to 100 vol % into contact with a carbon material under conditions at 150 to 600° C.; and a dispersion medium in which the fluorinated carbon material is dispersed. | 10-20-2011 |
20110248323 | ION IMPLANTATION APPARATUS, ION IMPLANTATION METHOD, AND SEMICONDUCTOR DEVICE - In the plasma-based ion implantation for accelerating positive ions of a plasma and implanting the positive ions into a substrate to be processed on a holding stage in a processing chamber where the plasma has been excited, ion implantation is achieved in the following manner: an RF power having a frequency of 4 MHz or greater is applied to the holding stage to cause a self-bias voltage to generate on the surface of the substrate. The RF power is applied a plurality of times in the form of pulses. | 10-13-2011 |
20110215384 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In manufacturing processes of a semiconductor device including a shallow trench element isolation region and an interlayer insulating film of a multilayer structure, it is necessary to repeatedly use CMP, but since the CMP itself is costly, the repeated use of the CMP is a cause to increase the manufacturing cost. | 09-08-2011 |
20110212552 | DEVICE MANUFACTURING METHOD - There is provided a wafer on which a plurality of electronic devices and circuits under test are to be formed, where each circuit under test includes a plurality of transistors under measurement provided in electrically parallel, a selecting section which sequentially selects the respective transistors under measurement, and an output section which sequentially outputs the source voltages of the transistors under measurement sequentially selected by the selecting section. | 09-01-2011 |
20110209567 | DISPLAY APPARATUS - There is provided a wafer on which a plurality of electronic devices and circuits under test are to be formed, where each circuit under test includes a plurality of transistors under measurement provided in electrically parallel, a selecting section which sequentially selects the respective transistors under measurement, and an output section which sequentially outputs the source voltages of the transistors under measurement sequentially selected by the selecting section. | 09-01-2011 |
20110177355 | AL ALLOY MEMBER, ELECTRONIC DEVICE MANUFACTURING APPARATUS, AND METHOD OF MANUFACTURING AN ANODIC OXIDE FILM COATED AL ALLOY MEMBER - Provided is an Al alloy member with an excellent mechanical strength that is sufficient for use in large-scale manufacturing apparatuses. The Al alloy member is characterized in that, in mass %, Mg concentration is 5.0% or less, Ce concentration is 15% or less, Zr concentration is 0.15% or less, the balance comprises Al and unavoidable impurities, the elements of the unavoidable impurities are respectively 0.01% or less, and the Vickers hardness of the Al alloy member is greater than 30. | 07-21-2011 |
20110127075 | INTERLAYER INSULATING FILM, WIRING STRUCTURE, AND METHODS OF MANUFACTURING THE SAME - An insulative coat film comprising one or two or more kinds of oxides having a dielectric constant (k) of 2.5 or smaller and expressed by a general formula of ((CH | 06-02-2011 |
20110120566 | DISCONTINUOUS SWITCHING FLUID FLOW RATE CONTROL METHOD USING PRESSURE TYPE FLOW RATE CONTROL DEVICE - A fluid flow rate control method is provided that uses a flow rate range variable type pressure type flow rate control device provided with at least two or more parallel fluid passages disposed between the downstream side of a control valve of the control device and a fluid supply pipe passage, and orifices having different fluid flow rate characteristics are respectively interposed in parallel fluid passages to pass fluid in a first flow rate region through one orifice for flow rate control, and to pass fluid in a second flow rate region through at least another orifice for flow rate control. Flow rate characteristics of the respective orifices are selected so that a maximum controllable flow rate of fluid in the first flow rate region at low flow rate is smaller than 10% of a maximum controllable flow rate in the second flow rate region at high flow rate. | 05-26-2011 |
20110049718 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, ELECTRONIC INSTRUMENT, SEMICONDUCTOR MANUFACTURING APPARATUS, AND STORAGE MEDIUM - When a barrier film is formed on an exposed surface of an interlayer insulation film on a substrate, the interlayer insulation film having a recess formed therein, and a metal wiring to be electrically connected to a metal wiring in a lower layer is formed in the recess, a barrier film having an excellent step coverage can be formed and increase of a wiring resistance can be restrained. An oxide film on a surface of the lower copper wiring exposed to a bottom surface of the interlayer insulation film is reduced or edged so as to remove oxygen on the surface of the copper wiring. Then, by supplying an organic metal compound containing manganese and containing no oxygen, generation of manganese oxide as a self-forming barrier film is selectively allowed on an area containing oxygen, such as a sidewall of the recess and a surface of the interlayer insulation film, while generation of the manganese oxide is not allowed on the surface of the copper wiring. Thereafter, copper is embedded in the recess. | 03-03-2011 |
20110041768 | HEAT EQUALIZER AND ORGANIC FILM FORMING APPARATUS - A heat equalizer includes a container structure having a heating block in which a working fluid is held for heating and vaporizing a material to be heated, a heater placed at the bottom of the container structure, and a material feed pipe allowing the outside and the inside of the container structure to communicate with each other. In the heating block, as a flow path in which the material to be heated flows, a main header pipe connected to the material feed pipe and extending in the horizontally, and a riser pipe branching from the main header pipe and extending vertically are formed. As a condensation path in which the working fluid is cooled and condensed, condensation holes formed respectively on the opposite sides of the riser pipe and extending horizontally, and a condensation pit formed under the riser pipe are formed. Between the condensation holes and the condensation pit, the main header pipe is placed. | 02-24-2011 |
20110018577 | TEST CIRCUIT, WAFER, MEASURING APPARATUS, MEASURING METHOD, DEVICE MANUFACTURING METHOD AND DISPLAY APPARATUS - There is provided a wafer on which a plurality of electronic devices and circuits under test are to be formed, where each circuit under test includes a plurality of transistors under measurement provided in electrically parallel, a selecting section which sequentially selects the respective transistors under measurement, and an output section which sequentially outputs the source voltages of the transistors under measurement sequentially selected by the selecting section. | 01-27-2011 |
20110000783 | ROTARY MAGNET SPUTTERING APPARATUS - Provided is a rotary magnet sputtering apparatus which includes a plasma shielding member and an outer wall connected to the ground and which has a series resonant circuit and a parallel resonant circuit between the plasma shielding member and the outer wall. The series resonant circuit has a very low impedance only at its resonant frequency while the parallel resonant circuit has a very high impedance only at its resonant frequency. With this configuration, the impedance between substrate RF power and the plasma shielding member becomes very high so that it is possible to suppress the generation of plasma between a substrate | 01-06-2011 |
20110000533 | PHOTOELECTRIC CONVERSION ELEMENT STRUCTURE AND SOLAR CELL - It is possible to reduce the contact resistance so as to improve the conversion efficiency of a photoelectric conversion element structure. Provided is a photoelectric conversion element structure of the pin structure which selects an upper limit energy level of the valence band of the p-type semiconductor or the electron affinity of the n-type semiconductor layer and the work function of a metal layer which is brought into contact with the semiconductor, so as to reduce the contact resistance as compared to the case when Al or Ag is used as an electrode. The selected metal layer may be arranged between the electrode formed from Al or Ag and the semiconductor or may be substituted for the n- or p-type semiconductor. | 01-06-2011 |
20100330390 | STRUCTURAL MEMBER TO BE USED IN APPARATUS FOR MANUFACTURING SEMICONDUCTOR OR FLAT DISPLAY, AND METHOD FOR PRODUCING THE SAME - A structural member for a manufacturing apparatus has a metal base member mainly composed of aluminum, a high-purity aluminum film formed on the surface of the metal base member, and a nonporous amorphous aluminum oxide passivation film which is formed by anodizing the high-purity aluminum film. A method for producing a structural member for a manufacturing apparatus, includes forming a high-purity aluminum film on the surface of a metal base member mainly composed of aluminum, and anodizing the high-purity aluminum film in a chemical conversion liquid having a pH of 4-10 and containing a nonaqueous solvent, which has a dielectric constant lower than that of water and dissolves water, thereby converting at least a surface portion of the high-purity aluminum film into a nonporous amorphous aluminum oxide passivation film. | 12-30-2010 |
20100308839 | ELECTRONIC DEVICE IDENTIFYING METHOD - An electronic device that includes an actual operation circuit that operates during an actual operation of the electronic device, a second test circuit and a third test circuit that operate during a test of the electronic device, and a power supply section. The power supply section, during the actual operation of the electronic device, does not apply a power supply voltage to the second test circuit and applies power supply voltages to the actual operation circuit and the third test circuit. The power supply section, to obtain identification of the electronic device, applies a power supply voltage to the second test circuit. | 12-09-2010 |
20100288439 | TOP PLATE AND PLASMA PROCESS APPARATUS EMPLOYING THE SAME - A disclosed top plate that is configured as a solid part and provided in an opening in a ceiling portion of a plasma process chamber whose inside is evacuatable to vacuum includes plural gas conduits formed in a horizontal direction of the top plate; and gas ejection holes that are open in a first surface of the top plate, the first surface facing the inside of the plasma process chamber and in gaseous communication with the plural gas conduits. | 11-18-2010 |
20100233876 | FILM FORMING APPARATUS, FILM FORMING METHOD, COMPUTER PROGRAM AND STORAGE MEDIUM - In a film forming method, a substrate is first loaded into a vacuum-evacuable processing chamber. At least a transition metal-containing source gas and a reduction gas are supplied into the processing chamber, and the substrate is heated. Then, a thin film is formed in a recess in the surface of the substrate by heat treatment. Accordingly, the surface recess of the substrate can be filled with a copper film. | 09-16-2010 |
20100231118 | CATHODE BODY AND FLUORESCENT TUBE USING THE SAME - An object of the present invention is to provide a cathode body having a high intensity, a high efficiency, and a long life. The cathode body of the present invention is manufactured by forming, on a cylindrical cup formed of a metal alloy containing lanthanum oxide and having a high thermal conductivity, a LaB | 09-16-2010 |
20100230387 | Shower Plate, Method for Manufacturing the Shower Plate, Plasma Processing Apparatus using the Shower Plate, Plasma Processing Method and Electronic Device Manufacturing Method - Occurrence of a back-flow of plasma or ignition of gas for plasma excitation in a longitudinal hole portion can be prevented more completely, and a shower plate in which efficient plasma excitation is possible is provided. In shower plate | 09-16-2010 |
20100216300 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device manufacturing method, the method including: forming a semiconductor element on a semiconductor substrate; and by using microwaves as a plasma source, forming an insulation film on the semiconductor element by performing a CVD process using microwave plasma having an electron temperature of plasma lower than 1.5 eV and an electron density of plasma higher than 1×10 | 08-26-2010 |
20100213516 | SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE - On a surface of a semiconductor substrate, a plurality of terraces formed stepwise by an atomic step are formed in the substantially same direction. Using the semiconductor substrate, a MOS transistor is formed so that no step exists in a carrier traveling direction (source-drain direction). | 08-26-2010 |
20100193900 | SOI SUBSTRATE AND SEMICONDUCTOR DEVICE USING AN SOI SUBSTRATE - A base is formed of a material, such as SiC, having mechanical characteristics higher than those of silicon for forming a semiconductor layer, and the base and the semiconductor layer are bonded through an insulating layer. After bonding, an SOI substrate is formed by mechanically separating the semiconductor layer from the base, and the separated semiconductor layer is reused for forming the subsequent SOI substrate. Thus, a large SOI substrate having a diameter of 400 mm or more, which has been difficult to obtain by conventional methods, can be obtained. | 08-05-2010 |
20100178775 | SHOWER PLATE SINTERED INTEGRALLY WITH GAS RELEASE HOLE MEMBER AND METHOD FOR MANUFACTURING THE SAME - A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 μm to 70 μm, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 μm communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas. | 07-15-2010 |
20100139775 | FLOW RATE RANGE VARIABLE TYPE FLOW RATE CONTROL APPARATUS - A pressure type flow control device enabling a reduction in size and an installation cost by accurately controlling the flow of a fluid in a wide flow range. Specifically, the flow of the fluid flowing in an orifice ( | 06-10-2010 |
20100126852 | ROTARY MAGNET SPUTTERING APPARATUS - In a rotary magnet sputtering apparatus, a target consumption displacement quantity is measured, and corresponding to the measurement results, a distance between a rotating magnet group and a target is adjusted, and uniform film forming rate is achieved over a long period of time so as to reduce the change of a target surface due to consumption of the target and to reduce the change of the film forming rate with time. An ultrasonic sensor or a laser transmitting/receiving device may be used as a means for measuring the consumption displacement quantity of the target. | 05-27-2010 |
20100119642 | RESIN MOLDING DEVICE - A resin molding device which molds a resin tube | 05-13-2010 |
20100101945 | MAGNETRON SPUTTERING APPARATUS - In a magnetron sputtering apparatus configured such that a magnetic field pattern on a target surface moves with time by means of a rotary magnet group, an object of this invention is to solve a problem that the failure rate of substrates to be processed becomes high upon plasma ignition or extinction, thereby providing a magnetron sputtering apparatus in which the failure rate of the substrates is smaller than conventional. | 04-29-2010 |
20100067100 | LASER OSCILLATOR - A laser oscillator includes a ring resonator. The ring resonator includes an optical circulator having first, second, third, and fourth ports and a first optical amplification fiber connected to the optical circulator. Light incident on the first port is exited from the second port, and light incident on the second port is exited from the third port. The fourth port provides an exciting light and injects the exciting light into the ring resonator through the first port. The first optical amplification fiber amplifies light exited from the third port with the exciting light provided by the fourth port. The laser oscillator also includes an optical member connected to the optical circulator. The optical member reflects at least a part of the light exited from the second port and injects the same into the second port again. | 03-18-2010 |
20100065967 | Copper interconnection, method for forming copper interconnection structure, and semiconductor device - A copper interconnection structure includes an insulating layer, an interconnection body including copper and a barrier layer surrounding the interconnection body. The barrier layer includes a first barrier layer formed between a first portion of the interconnection body and the insulating layer. The first portion of the interconnection body is part of the interconnection body that faces the insulating layer. The barrier layer also includes a second barrier layer formed on a second portion of the interconnection body. The second portion of the interconnection body is part of the interconnection body not facing the insulating layer. Each of the first and the second barrier layers is formed of an oxide layer including manganese, and each of the first and the second barrier layers has a position where the atomic concentration of manganese is maximized in their thickness direction of the first and the second barrier layers. | 03-18-2010 |
20100059830 | Semiconductor device - In a semiconductor device, the degree of flatness of 0.3 nm or less in terms of a peak-to-valley (P-V) value is realized by rinsing a silicon surface with hydrogen-added ultrapure water in a light-screened state and in a nitrogen atmosphere and a contact resistance of 10 | 03-11-2010 |
20100059820 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A thin-film transistor (TFT) has a gate insulating film excellent in transparency and flatness. The gate insulating film is formed by a transparent insulating film ( | 03-11-2010 |
20100059368 | MAGNETRON SPUTTERING APPARATUS - Provided is a magnetron sputtering apparatus that increases an instantaneous plasma density on a target to improve a film forming rate. The magnetron sputtering apparatus includes a substrate to be processed, a target installed to face the substrate and a rotary magnet installed at a side opposite to the substrate across the target. In the magnetron sputtering apparatus, plasma loops are formed on a target surface. The plasma loops are generated, move and disappear in an axis direction of the rotary magnet according to a rotation of the rotary magnet. | 03-11-2010 |
20100032844 | INTERLAYER INSULATING FILM, WIRING STRUCTURE AND ELECTRONIC DEVICE AND METHODS OF MANUFACTURING THE SAME - A wiring structure of a semiconductor device or the like includes an interlayer insulating film having a fluorocarbon film formed on an underlayer, and a conductor buried in the interlayer insulating film. The fluorocarbon film contains nitrogen and is low in dielectric constant, excellent in reproducibility and stable. | 02-11-2010 |
20100015330 | Copper alloy and liquid-crystal display device - A method of forming an oxide film on a surface of a copper alloy, including the steps of providing a copper alloy including copper and an element selected from the group consisting of Mn, Zn, Ga, Li, Ge, Sr, Ag, Ba, Pr and Nd, and diffusing atoms of the element to a surface of the copper alloy so as to form an oxide film on the surface of the copper alloy, | 01-21-2010 |
20090309138 | Transistor and semiconductor device - An accumulation mode transistor has an impurity concentration of a semiconductor layer in a channel region at a value higher than 2×10 | 12-17-2009 |
20090286405 | SHOWER PLATE, AND PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND ELECTRONIC DEVICE MANUFACTURING METHOD USING THE SHOWER PLATE - Provided is a shower plate in which there's no need for a cover plate. The shower plate | 11-19-2009 |
20090283901 | Semiconductor device and multilayer wiring board - A gas or an insulating material having a relative dielectric constant of not more than 2.5 on average is interposed between a first wiring layer and a second wiring layer included in a multilayer wiring structure. Between a wiring of the first wiring layer and a wiring of the second wiring layer, a conductive connector is arranged. Between a predetermined wiring of the first wiring layer and a predetermined wiring of the second wiring layer, an insulating heat conductor having a relative dielectric constant of not more than 5 is arranged. | 11-19-2009 |
20090277379 | Film coating apparatus - A gas ejected from a sonic nozzle toward the rear surface of a wafer. The flow speed of the gas flowing to the outer circumference side along the rear surface of the wafer is increased between the rear surface of the wafer and a second cup and is kept by Bernoulli's effects. Thus, flapping of wafer is suppressed. Furthermore, a resist solution is prevented from flowing around to the rear surface. | 11-12-2009 |
20090269573 | High-Performance Composite Material and Manufacturing Method thereof - The present invention provides a new high-performance composite material that uses inexpensive materials, has high toughness, has a low coefficient of friction, excellent wear resistance, lower electrical resistance, and excellent electromagnetic wave absorption, and corresponding manufacturing method. | 10-29-2009 |
20090267122 | Semiconductor device and method of manufacturing the semiconductor device - A semiconductor device has a substrate, an insulator, an yttrium oxide film, a ferroelectric film (STN film), and an upper electrode. | 10-29-2009 |
20090263306 | SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, WIRING SUBSTRATE, AND SILICON CARBIDE MANUFACTURING METHOD - A silicon carbide substrate has a high-frequency loss equal to or less than 2.0 dB/mm at 20 GHz is effective to mount and operate electronic components. The silicon carbide substrate is heated at 2000° C. or more to be reduced to the high-frequency loss equal to 2.0 dB/mm or less at 20 GHz. Moreover, manufacturing the silicon carbide substrate by CVD without flowing nitrogen into a heater enables the high-frequency loss to be reduced to 2.0 dB/mm or less. | 10-22-2009 |
20090250755 | Semiconductor Device - A transistor capable of adjusting a threshold value is obtained by adjusting an impurity concentration of a silicon substrate supporting an SOI layer and by controlling a thickness of a buried insulating layer formed on a surface of the silicon substrate in contact with the SOI layer. | 10-08-2009 |
20090246524 | POROUS CALCIUM OXIDE PARTICULATE AND POROUS CALCIUM HYDROXIDE PARTICULATE - Granular calcium oxide and calcium hydroxide which are highly reactive with a halide gas and its decomposition products and favorably employable for filling a gas-fixing unit ( | 10-01-2009 |
20090236747 | Semiconductor device and method for fabricating the same - A multilevel interconnect structure in a semiconductor device comprises a first insulating layer ( | 09-24-2009 |
20090206728 | LIGHT-EMITTING DEVICE, METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE, AND SUBSTRATE PROCESSING APPARATUS - A substrate process apparatus that forms a light emitting device configured with an organic layer including a light emitting layer on a substrate to be processed, the organic layer being formed between a first electrode and a second electrode, includes an organic layer forming apparatus wherein the organic layer is formed on the first electrode formed on the substrate to be processed; an electrode forming apparatus wherein the second electrode is formed on the organic layer; and an etching apparatus wherein the organic layer is etched. | 08-20-2009 |
20090171507 | GASKET TYPE ORIFICE AND PRESSURE TYPE FLOW RATE CONTROL APPARATUS FOR WHICH THE ORIFICE IS EMPLOYED - An orifice changeable pressure type flow rate control apparatus comprises a valve body of a control valve for a pressure type flow rate control apparatus installed between an inlet side fitting block provided with a coupling part of a fluid supply pipe and an outlet side fitting block provided with a coupling part of a fluid takeout pipe; a fluid inlet side of the valve body and the inlet side fitting block, and a fluid outlet side of the valve body and the outlet side fitting block are detachably and hermitically connected respectively so a flow passage for gases through the control valve is formed; and, a gasket type orifice for a pressure type flow rate control apparatus is removably inserted between a gasket type orifice insertion hole provided on the outlet side of the valve body and a gasket type orifice insertion hole of the outlet side fitting block. | 07-02-2009 |
20090169789 | Resin pipe - A resin pipe has an inner layer made of a fluororesin, an intermediate layer of nylon, and an outermost layer made of a fluororesin and covering the intermediate layer. | 07-02-2009 |
20090156084 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE - Disclosed is a light emitting device manufacturing apparatus including a plurality of processing chambers for performing a substrate processing for forming, on a target substrate, a light emitting device having multiple layers including an organic layer, wherein each of the plurality of processing chambers is configured to perform a substrate process on the target substrate while maintaining the target substrate such that its device forming surface, on which the light emitting device is to be formed, is oriented toward a direction opposite to a direction of gravity. | 06-18-2009 |
20090135109 | ORGANIC EL ELEMENT, ORGANIC EL DISPLAY DEVICE, AND METHODS OF MANUFACTURING THE SAME - In an organic EL element having a transparent conductive electrode and a cathode opposed to the transparent conductive electrode, the cathode includes a film of a rare earth element that can be sputtered. The film of the rare earth element having a low work function, for example, a LaB | 05-28-2009 |
20090081819 | METHOD AND APPARATUS FOR MANAGING MANUFACTURING EQUIPMENT, METHOD FOR MANUFACTURING DEVICE THEREBY - Provided is a method for managing manufacturing apparatuses used in a managed production line including a plurality of manufacturing processes for manufacturing an electronic device, each of the apparatuses being used in each of the processes, the method including: acquiring a property of a reference device manufactured in a predetermined reference production line including the manufacturing processes to be performed; performing at least one of the manufacturing processes in the managed production line, performing the other manufacturing processes in the reference production line, and manufacturing a comparison device; measuring a property of the comparison device; comparing the measured properties between the reference and the comparison devices; and judging whether the manufacturing apparatus used in the at least one manufacturing process is defective or not, based on a property difference between the reference and the comparison devices. | 03-26-2009 |
20090058456 | MANUFACTURING SYSTEM, MANUFACTURING METHOD, MANAGING APPARATUS, MANAGING METHOD AND COMPUTER READABLE MEDIUM - There is provided a manufacturing system for manufacturing an electronic device through a plurality of manufacturing stages. The manufacturing system includes a plurality of manufacturing apparatuses performing processes corresponding to the plurality of manufacturing stages. The manufacturing system includes a manufacturing line that manufactures the electronic device, a manufacturing control section that causes the manufacturing line to manufacture a wafer having therein a test circuit including a plurality of transistors under measurement, a measuring section that measures an electrical characteristic of each of the plurality of transistors under measurement in the test circuit, an identifying section that identifies, among the plurality of manufacturing stages, a manufacturing stage in which a defect is generated, with reference to a distribution, on the wafer, of one or more transistors under measurement whose electrical characteristics do not meet a predetermined standard, and a setting changing section that changes a setting for a manufacturing apparatus that performs a process corresponding to the manufacturing stage in which the defect is generated. | 03-05-2009 |
20090051280 | LIGHT-EMITTING DEVICE, METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE, AND SUBSTRATE PROCESSING APPARATUS - Disclosed is a light-emitting device including a first electrode; a second electrode opposite to the first electrode; and an organic layer that is formed between the first electrode and the second electrode and includes a light-emitting layer. The second electrode includes a conductive protection layer that is formed on the organic layer so as to protect the organic layer and a conductive main electrode layer that is formed on the protection layer. | 02-26-2009 |
20090050895 | SEMICONDUCTOR MANUFACTURING METHOD, SEMICONDUCTOR MANUFACTURING APPARATUS, AND DISPLAY UNIT - In a semiconductor manufacturing method that manufactures a coplanar type thin film transistor, a microcrystalline film | 02-26-2009 |
20090000742 | Shower Plate and Method for Manufacturing the Same - Disclosed is a shower plate which is formed with a large number of process-gas blowing holes having a simple structure, high machinability and high dimensional accuracy without the risk of unevenness in blowing of a process gas and outbreak of particles, while ensuring constant quality and interchangeability. Through a press forming process, a powder for a ceramic material with a low dielectric constant is formed into a disc-shaped compact having dimensions determined in consideration of a sintering shrinkage value and a machining value. A gas inlet passage | 01-01-2009 |
20080224725 | TEST CIRCUIT, WAFER, MEASURING APPARATUS, MEASURING METHOD, DEVICE MANUFACTURING METHOD AND DISPLAY APPARATUS - There is provided a wafer on which a plurality of electronic devices and circuits under test are to be formed, where each circuit under test includes a plurality of transistors under measurement provided in electrically parallel, a selecting section which sequentially selects the respective transistors under measurement, and an output section which sequentially outputs the source voltages of the transistors under measurement sequentially selected by the selecting section. | 09-18-2008 |