lNTERNATIONAL BUSINESS MACHINES CORPORATION Patent applications |
Patent application number | Title | Published |
20150319263 | NON-SUBJECTIVE QUALITY ANALYSIS OF DIGITAL CONTENT ON TABLETOP DEVICES - A method of evaluating digital content displayed on an electronic tabletop device includes receiving a plurality of non-intentional signals generated in response to a plurality of users interacting with at least one of the digital content displayed on the electronic tabletop device and each other, classifying the plurality of non-intentional signals into a first set of data including user-specific non-intentional signals and a second set of data including collaborative non-intentional signals, correlating the plurality of non-intentional signals to user profiles corresponding to the plurality of users, and generating an evaluation report including information indicating a collaborative quality of the digital content based on the plurality of non-intentional signals and a correlation of the plurality of non-intentional signals to the user profiles. | 11-05-2015 |
20150317323 | INDEXING AND SEARCHING HETEROGENOUS DATA ENTITIES - A method of performing a search of heterogeneous data based on an input query includes: generating an index including at least two hash tables, where each hash table corresponds to a different data domain of the heterogeneous data and includes hash code sets, where at least one of the hash code sets is mapped to a hash code set of another one of the tables. The method further includes performing a hash on the input query to generate a hash code, by referring to the index, determining a first hash code set that the generated hash code belongs to, and determining a second hash code set that the determined first hash code set is mapped to, and providing at least one result based on the determined second hash code set. | 11-05-2015 |
20150228670 | METHOD TO FORM DUAL CHANNEL GROUP III-V AND Si/Ge FINFET CMOS - A method includes providing a structure having a substrate, a first insulating layer on the substrate, a first semiconductor material layer on the first insulating layer, a second insulating layer on the first semiconductor layer in a first portion of the structure and a second semiconductor layer of a second, different semiconductor material on the second insulating layer in the first portion. The method further includes growing additional first semiconductor material on the first semiconductor layer in a second portion of the structure forming a regrown semiconductor layer; forming first fins in the regrown semiconductor layer and second fins in the second semiconductor layer; and forming gate structures upon the first and second fins. A height difference, relative to a surface of the first insulating layer, of the gate structures formed upon the first fins and the gate structures formed upon the second fins is less than a predetermined value. | 08-13-2015 |
20140239442 | ELECTROLESS PLATED MATERIAL FORMED DIRECTLY ON METAL - A method for forming magnetic conductors includes forming a metal structure on a substrate. Plating surfaces are prepared on the metal structure for electroless plating by at least one of: masking surfaces of the metal structure to prevent electroless plating on masked surfaces and/or activating a surface of the metal structure. Magnetic material is electrolessly plated directly on the plating surfaces to form a metal and magnetic material structure. | 08-28-2014 |
20140113402 | High Efficiency Flexible Solar Cells For Consumer Electronics - A method comprises providing a base substrate having a surface; disposing layers of III-V semiconductor material on the surface of the base substrate using a chemical vapor deposition technique or a molecular beam epitaxy technique; disposing a stressor layer on the layer of III-V semiconductor material; operatively associating a flexible handle substrate with the stressor layer; and using controlled spalling to separate the layer of III-V semiconductor material from the base substrate to expose a surface of the layer of III-V semiconductor material. | 04-24-2014 |
20140068575 | METHOD AND SYSTEM FOR LOADING STATUS CONTROL OF DLL - Apparatus and methods are provided for controlling the loading status of DLLs. Specifically, a streaming program compiler is provided. The compiler includes operation modules for calling DLLs during streaming program execution; association table generating units for generating association tables according to user-defined rules, where the association table includes entries indicating (i) stream branches of the streaming program and (ii) an operation module corresponding to the stream branches; and a trigger generating unit for generating a trigger based on user-defined rules, where the trigger generating unit (i) determines which conditions for loading and unloading DLLs fit the streaming program, (ii) matches these conditions to a particular stream branch to identify a matched stream branch, and (iii) sends out triggering signals indicating the matched stream branch. This invention also provides a corresponding method and controller. | 03-06-2014 |
20130307089 | Self-Aligned III-V MOSFET Fabrication With In-Situ III-V Epitaxy And In-Situ Metal Epitaxy And Contact Formation - A method for forming a transistor includes providing a patterned gate stack disposed on a III-V substrate and having sidewall spacers formed on sides of the patterned gate stack, the III-V substrate including source/drain regions adjacent to the sidewall spacers and field oxide regions formed adjacent to the source/drain regions. The method includes growing raised source/drain regions on the source/drain regions, the grown raised source/drain regions including III-V semiconductor material, and growing metal contacts on the grown raised source/drain regions. Another method for forming a transistor includes providing a patterned gate stack disposed on a III-V substrate and having sidewall spacers formed on sides of the patterned gate stack, the III-V substrate including source/drain regions adjacent to the sidewall spacers and field oxide regions formed adjacent to the source/drain regions. The method includes growing metal contacts on the source/drain regions. Transistors and computer program products are also disclosed. | 11-21-2013 |
20120321011 | ADAPTATION TO MILLIMETER-WAVE COMMUNICATION LINK USING DIFFERENT FREQUENCY CARRIERS - To realize quick adaptation to a communication link between a transmitter and a receiver by using two different frequency carriers. A receiver detects a preamble from a transmission bit string. When determining that a total sum of the number of modified bits exceeds a certain threshold in a range of a payload following the preamble (when detecting that a reception state of a communication link has been degraded), the receiver issues, to a transmitter, a request for changing a transmission parameter (four parameters may be used for enhancement/lowering) for the transmission bit string by using a communication link, which is a relatively-low-frequency carrier. On the other hand, the transmitter receives the request for change, and executes the request for changing the transmission parameter for the transmission bit string while maintaining transmission of a payload in the transmission bit string. | 12-20-2012 |