Koha Co., Ltd. Patent applications |
Patent application number | Title | Published |
20160122899 | METHOD FOR CULTIVATING BETA-Ga2O3 SINGLE CRYSTAL, AND BETA-Ga2O3-SINGLE-CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING SAME - Provided is one embodiment which is a method for growing a β-Ga | 05-05-2016 |
20160115621 | METHOD FOR CULTIVATING BETA-Ga2O3 SINGLE CRYSTAL, AND BETA-Ga2O3-SINGLE-CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING SAME - Provided is one embodiment which is a method for growing a β-Ga | 04-28-2016 |
20160032485 | METHOD FOR GROWING BETA-GA2O3-BASED SINGLE CRYSTAL - Provided is a method for growing a β-Ga | 02-04-2016 |
20150155356 | SEMICONDUCTOR LAMINATE STRUCTURE AND SEMICONDUCTOR ELEMENT - Provided is a semiconductor laminate structure including a Ga | 06-04-2015 |
20140293646 | LIGHTING DEVICE AND DISPLAY DEVICE - A lighting device includes a translucent member having the same cross sectional tubular shape throughout a longitudinal direction and including a lens that includes a light incident surface for receiving incident light and a pair of light exit surface for diffusing and emitting the light incident on the light incident surface to the outside, and a light-emitting portion mounted on a substrate and emitting the light toward a region including the light incident surface of the translucent member, where in the translucent member includes a pair of light guide portions for guiding the light incident on the light incident surface to a pair of the light exit surfaces so that the light incident on the light incident surface is diffused and emitted from the pair of light exit surfaces in a width direction that is orthogonal to the longitudinal direction. | 10-02-2014 |
20140231830 | CRYSTAL LAYERED STRUCTURE AND METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR ELEMENT - Provided is a crystal layered structure having a low dislocation density on the upper surface of a nitride semiconductor layer on a Ga | 08-21-2014 |
20140048823 | SEMICONDUCTOR STACKED BODY, METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR ELEMENT - A method for manufacturing a semiconductor stacked body, and a semiconductor element including the semiconductor stacked body includes a semiconductor stacked body, including a Ga | 02-20-2014 |
20130256730 | LIGHT-EMITTING DEVICE - [Problem] To provide a light-emitting device which does not undergo the deterioration in luminous efficiency associated with the long-term use. [Solution] A light-emitting device ( | 10-03-2013 |
20130248902 | LIGHT EMITTING ELEMENT AND METHOD OF MAKING SAME - A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (Al | 09-26-2013 |
20120070929 | METHOD FOR FABRICATING WAFER PRODUCT AND METHOD FOR FABRICATING GALLIUM NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE - Provided is a method for fabricating a wafer product including an active layer grown on a gallium oxide substrate and allowing an improvement in emission intensity. In step S | 03-22-2012 |
20120003770 | METHOD FOR FORMING EPITAXIAL WAFER AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for forming an epitaxial wafer is provided as one enabling growth of a gallium nitride based semiconductor with good crystal quality on a gallium oxide region. In step S | 01-05-2012 |
20110315998 | EPITAXIAL WAFER, METHOD FOR MANUFACTURING GALLIUM NITRIDE SEMICONDUCTOR DEVICE, GALLIUM NITRIDE SEMICONDUCTOR DEVICE AND GALLIUM OXIDE WAFER - A gallium nitride based semiconductor device is provided which includes a gallium nitride based semiconductor film with a flat c-plane surface provided on a gallium oxide wafer. A light emitting diode LED includes a gallium oxide support base | 12-29-2011 |
20110253973 | Semiconductor layer - A light-emitting element includes a β-Ga | 10-20-2011 |
20100038652 | LIGHT EMITTING ELEMENT AND METHOD OF MAKING SAME - A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (Al | 02-18-2010 |
20080237607 | LIGHT EMITTING ELEMENT AND METHOD OF MAKING SAME - A light emitting element has a substrate of gallium oxides and a pn-junction formed on the substrate. The substrate is of gallium oxides represented by: (Al | 10-02-2008 |