Kabushiki Kasiha Toshiba Patent applications |
Patent application number | Title | Published |
20120063749 | VIDEO FILE CREATION DEVICE AND VIDEO FILE CREATION METHOD - A video file creation device according to an embodiment includes an encoder, a metadata acquisition unit, a file creation unit, and a data storage unit. The encoder is configured to create compressed video data from a video stream. The metadata acquisition unit is configured to acquire metadata related to the video data. The file creation unit configured to create a file in an MXF format having a metadata section formed of a metadata recording area and an additional writing area. The acquired metadata is recorded in the metadata recording area. The data storage unit configured to record the file in the MXF format created by the file creation unit. | 03-15-2012 |
20100109165 | SEMICONDUCTOR DEVICE - A semiconductor device having a GaAsFET and input and output matching circuits connected to the FET is provided. In the semiconductor device, a line, including a wire connection portion connected to the input or output matching circuit and a lead connection portion connected to an input or output lead which is connected to an external circuit, is formed in such a manner that a line width at the wire connection portion is wider than that at the lead connection portion. With the semiconductor device, the number of wires connecting the input or output matching circuits with the wire connection portion can be increased. | 05-06-2010 |
20090108333 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - A non-volatile semiconductor storage device has a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series. Each of the memory strings includes: a first columnar semiconductor layer extending in a direction perpendicular to a substrate; a charge accumulation layer formed on the first columnar semiconductor layer via a first air gap and accumulating charges; a block insulation layer contacting the charge accumulation layer; and a plurality of first conductive layers contacting the block insulation layer. | 04-30-2009 |