JX NIPPON MINING & METALS CORPORATION Patent applications |
Patent application number | Title | Published |
20160126072 | Sputtering Target And Method For Production Thereof - A sputtering target according to the disclosure includes 5 wtppm to 10,000 wtppm of Cu and the balance of In and has a relative density of 99% or more and an average grain size of 3,000 μm or less. | 05-05-2016 |
20160056313 | COMPOUND SEMICONDUCTOR SINGLE CRYSTAL INGOT FOR PHOTOELECTRIC CONVERSION DEVICES, PHOTOELECTRIC CONVERSION DEVICE, AND PRODUCTION METHOD FOR COMPOUND SEMICONDUCTOR SINGLE CRYSTAL INGOT FOR PHOTOELECTRIC CONVERSION DEVICES - The present invention increases the conversion efficiency of a photoelectric conversion element that uses cadmium zinc telluride or cadmium telluride (Cd(Zn)Te) compound semiconductor single crystals containing a group 1A element as an impurity. A heat-resistant pot is filled with raw material and a group 1A element, which is reacted with a portion of the raw material, and the container is heated, thereby melting the raw material into a melt and diffusing the dissociated group 1A element in the melt, producing single crystals from the melt. Compound semiconductor single crystals for photoelectric conversion elements having a hole concentration of 4×10 | 02-25-2016 |
20160043248 | INDIUM PHOSPHIDE WAFER, PHOTOELECTRIC CONVERSION ELEMENT, AND METHOD FOR PRODUCING A MONOCRYSTALLINE INDIUM PHOSPHIDE - In this photoelectric conversion element wherein group III-IV compound semiconductor single crystals containing zinc as an impurity are used as a substrate, the substrate is increased in size without lowering conversion efficiency. A heat-resistant crucible is filled with raw material and a sealant, and the raw material and sealant are heated, thereby melting the raw material into a melt, softening the encapsulant, and covering the melt from the top with the encapsulant. The temperature inside the crucible is controlled such that the temperature of the top of the encapsulant relative to the bottom of the encapsulant becomes higher in a range that not equal or exceed the temperature of bottom of the encapsulant, and seed crystal is dipped in the melt and pulled upward with respect to the melt, thereby growing single crystals from the seed crystal. Thus, a large compound semiconductor wafer that is at least two inches in diameter and has a low dislocation density of 5,000 cm | 02-11-2016 |
20160002749 | METHOD FOR MANUFACTURING HIGH PURITY MANGANESE AND HIGH PURITY MANGANESE - The present invention relates to a method for manufacturing a high purity Mn, the method comprising: placing a flake-like electrolytic Mn raw material in a magnesia crucible to perform melting with the use of a vacuum induction melting furnace (VIM furnace) at a melting temperature of 1240 to 1400° C. under an inert atmosphere of 500 Torr or less; then adding calcium in a range between 0.5 and 2.0% of the weight of Mn to perform deoxidation and desulfurization; casting the resultant in an iron mold after the completion of the deoxidation and desulfurization to manufacture an ingot; then placing the Mn ingot into a magnesia crucible to perform melting with the use of a vacuum induction melting furnace (VIM furnace) at a melting temperature, which is adjusted to 1200 to 1450° C. and maintained for 10 to 60 minutes, under an inert atmosphere of 200 Torr or less; casting the resultant in an iron mold to manufacture an ingot; then placing the metal Mn ingot in an alumina crucible; reducing pressure to 0.01 Torr with a vacuum pump; and then heating to develop a sublimation and distillation reaction. Provided is a method for manufacturing a high purity metal Mn from a commercially available electrolytic Mn. In particular, an object is to obtain a high purity metal Mn in which the amount of impurities such as B, Mg, Al and Si is small. | 01-07-2016 |
20150303040 | Tungsten Sintered Compact Sputtering Target and Tungsten Film Formed Using Said Target - A tungsten sintered compact sputtering target, wherein a molybdenum strength detected with a secondary ion mass spectrometer (D-SIMS) is equal to or less than 1/10000 of the tungsten strength. This invention aims to reduce the specific resistance of a tungsten film sputtered using the tungsten sintered compact target by reducing the molybdenum in the tungsten sintered compact sputtering target and adjusting the grain size distribution of the W powder that is used during sintering. | 10-22-2015 |
20150303039 | Indium Cylindrical Sputtering Target And Manufacturing Method Thereof - Provided are an indium cylindrical sputtering target capable of providing good film thickness distribution and a method for production thereof. The indium cylindrical target comprises crystal grains whose average size is 1 mm to 20 mm over its surface to be sputtered. The method for manufacturing the indium cylindrical target includes the steps of: casting a semi-finished product of an indium cylindrical target integrated with a backing tube; and subjecting the semi-finished product to plastic working in its radial direction, wherein the plastic working is performed with a total thickness reduction rate of at least 10% over its longitudinal direction. | 10-22-2015 |
20150245477 | Surface Treated Copper Foil and Laminate Using the Same - A surface treated copper foil which is well bonded to a resin and allows the resin to have excellent transparency after removal of the copper foil by etching, and a laminate using the same are provided. A surface treated copper foil having at least one surface with a skewness Rsk of −0.35 to 0.53, comprising an Sv defined by the following expression (1) of 3.5 or more based on a brightness curve: | 08-27-2015 |
20150237737 | SURFACE TREATED COPPER FOIL AND LAMINATE USING THE SAME, PRINTED WIRING BOARD, AND COPPER CLAD LAMINATE - A surface treated copper foil which is well bonded to a resin and achieves excellent visibility when observed through the resin, and a laminate using the same are provided. The surface treated copper foil to be laminated on a polyimide having the following ΔB (PI) of 50 or more and 65 or less before being laminated to the copper foil so as to form a copper clad laminate comprising a surface having a color difference ΔE*ab of 50 or more based on JIS Z 8730 through the polyimide and a difference between the top average Bt and the bottom average Bb in a brightness curve extending from an edge of the copper foil to a portion without the copper foil ΔB (ΔB=Bt−Bb) of 40 or more, wherein the brightness curve is obtained from an observation spot versus brightness graph of measurement results of the brightness of the photographed image of the copper foil through the polyimide laminated from the surface treated surface side with a CCD camera for the respective observation spots along the perpendicular direction of the extending direction of the observed copper foil. | 08-20-2015 |
20150195909 | Ultrathin Copper Foil And Method Of Manufacturing The Same, And Ultrathin Copper Layer - Provided is an ultrathin copper foil which has improved thickness accuracy of an ultrathin copper layer on a supporting copper foil. An ultrathin copper foil which is provided with a supporting copper foil, a releasing layer that is laminated on the supporting copper foil, and an ultrathin copper layer that is laminated on the releasing layer. The thickness accuracy of the ultrathin copper layer as determined by a weight thickness method is 3.0% or less. | 07-09-2015 |
20150194746 | Metallic Material For Electronic Components And Method For Producing Same, And Connector Terminals, Connectors And Electronic Components Using Same - The present invention provides metallic materials for electronic components, having low degree of whisker formation, low adhesive wear property and high durability, and connector terminals, connectors and electronic components using such metallic materials. The metallic material for electronic components includes: a base material; a lower layer formed on the base material, the lower layer being constituted with one or two or more selected from a constituent element group A, namely, the group consisting of Ni, Cr, Mn, Fe, Co and Cu; an intermediate layer formed on the lower layer, the intermediate layer being constituted with one or two or more selected from a constituent element group B, namely, the group consisting of Ag, Au, Pt, Pd, Ru, Rh, Os and Ir; and an upper layer formed on the intermediate layer, the upper layer being constituted with an alloy composed of one or two or more selected from the constituent element group B, namely, the group consisting of Ag, Au, Pt, Pd, Ru, Rh, Os and Ir and one or two selected from a constituent element group C, namely, the group consisting of Sn and In; wherein the thickness of the lower layer is 0.05 μm or more and less than 5.00 μm; the thickness of the intermediate layer is 0.01 μm or more and less than 0.50 μm; and the thickness of the upper layer is 0.02 μm or more and less than 0.80 μm. | 07-09-2015 |
20150188134 | Cathode Active Material For Lithium-Ion Battery, Cathode For Lithium-Ion Battery and Lithium-Ion Battery - A cathode active material for lithium-ion battery is provided, which provides good battery characteristics such as cycle characteristics. The cathode active material for lithium-ion battery is expressed by the composition formula: Li | 07-02-2015 |
20150147924 | Metallic Material For Electronic Components And Method For Producing Same, And Connector Terminals, Connectors And Electronic Components Using Same - The present invention provides metallic materials for electronic components, having low degree of whisker formation, low adhesive wear property and high durability, and connector terminals, connectors and electronic components using such metallic materials. The metallic material for electronic components includes: a base material; a lower layer formed on the base material, the lower layer being constituted with one or two or more selected from a constituent element group A, namely, the group consisting of Ni, Cr, Mn, Fe, Co and Cu; an intermediate layer formed on the lower layer, the intermediate layer including an alloy constituted with one or two or more selected from a constituent element group B, namely, the group consisting of Ag, Au, Pt, Pd, Ru, Rh, Os and Ir, and one or two selected from a constituent element group C, namely, the group consisting of Sn and In; and an upper layer formed on the intermediate layer, the upper layer being constituted with one or two selected from a constituent element group C, namely, the group consisting of Sn and In; wherein the thickness of the lower layer is 0.05 μm or more and less than 5.00 μm; the thickness of the intermediate layer is 0.02 μm or more and less than 0.80 μm; and the thickness of the upper layer is 0.005 μm or more and less than 0.30 μm. | 05-28-2015 |
20150107991 | Fe-Pt-Based Sputtering Target Having Nonmagnetic Substance Dispersed Therein - A sintered compact sputtering target configured from an alloy having a composition comprising Pt at a molecular ratio of 35 to 55% and remainder being Fe, and a nonmagnetic substance dispersed in the alloy, wherein the nonmagnetic substance contains at least SiO | 04-23-2015 |
20150079415 | Surface-Treated Copper Foil - This surface-treated copper foil is characterized in that the amount of adhesion of Si on the copper foil surface is from 3.1 to 300 μg/dm | 03-19-2015 |
20150064493 | COPPER FOIL COMPOSITE, FORMED PRODUCT AND METHOD OF PRODUCING THE SAME - A copper foil composite comprising a copper foil and a resin layer laminated thereon, satisfying an equation 1: (f | 03-05-2015 |
20150017053 | Neodymium-Based Rare Earth Permanent Magnet and Process for Producing Same - Provided is a neodymium-based rare earth permanent magnet having a purity of 99.9 wt % or higher excluding gas components and component elements. The present invention can remarkably improve the magnetic properties in a neodymium-based rare earth permanent magnet by highly purifying the magnetic materials. Furthermore, the present invention aims to provide a high-performance neodymium-based rare earth permanent magnet with improved heat resistance and corrosion resistance, which are inherent drawbacks of magnetic materials. | 01-15-2015 |
20150011132 | PRESS-FIT TERMINAL AND ELECTRONIC COMPONENT USING THE SAME - There are provided a press-fit terminal which has an excellent whisker resistance and a low inserting force, is unlikely to cause shaving of plating when the press-fit terminal is inserted into a substrate, and has a high heat resistance, and an electronic component using the same. A press-fit terminal comprises: a female terminal connection part provided at one side of an attached part to be attached to a housing; and a substrate connection part provided at the other side and attached to a substrate by press-fitting the substrate connection part into a through-hole formed in the substrate. At least the substrate connection part has the surface structure described below, and the press-fit terminal has an excellent whisker resistance. The surface structure comprises: an A layer formed as an outermost surface layer and formed of Sn, In, or an alloy thereof; a B layer formed below the A layer and constituted of one or two or more selected from the group consisting of Ag, Au, Pt, Pd, Ru, Rh, Os, and Ir; and a C layer formed below the B layer and constituted of one or two or more selected from the group consisting of Ni, Cr, Mn, Fe, Co, and Cu. The A layer has a thickness of 0.002 to 0.2 μm. The B layer has a thickness of 0.001 to 0.3 μm. The C layer has a thickness of 0.05 μm or larger. | 01-08-2015 |
20140356222 | High Purity Manganese and Method for Producing Same - High purity manganese having a purity of 3N (99.9%) or more, wherein number of non-metal inclusions with a size of 0.5 μm or more is 50000 or less per 1 g of the high purity manganese. A method for producing high purity manganese, wherein refining is performed using a raw material (secondary raw material) obtained by acid-washing a manganese raw material (primary raw material) so that the produced high purity manganese has a purity of 3N (99.9%) or more, and number of non-metal inclusions with a size of 0.5 μm or more is 50000 or less per 1 g of the high purity manganese. The present invention provides a method for producing high purity metal manganese from commercially available manganese, and aims to obtain high purity metal manganese having a low LPC. | 12-04-2014 |
20140353278 | COPPER FOIL FOR PRODUCING GRAPHENE AND METHOD OF PRODUCING GRAPHENE USING THE SAME - A copper foil for producing graphene including Cu having a purity of 99.95% by mass or more. | 12-04-2014 |
20140329107 | METAL MATERIAL FOR ELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING THE SAME - There are provided a metal material for electronic component which has low insertability/extractability, low whisker formability, and high durability, and a method for manufacturing the metal material. The metal material | 11-06-2014 |
20140318973 | ELECTROLYTIC COPPER FOIL AND PRODUCTION METHOD OF ELECTROLYTIC COPPER FOIL - The present invention provides an electrolytic copper foil that has a high normal tensile strength, a low decrease in tensile strength after a thermal history, and a low concentration of impurities in the copper foil and a method for producing the copper foil. Specifically, the electrolytic copper foil in which a sulfur concentration of the copper foil is not less than 10 ppm by mass but no more than 50 ppm by mass, wherein when lattices with a spacing of 10 nm in a STEM image observed with a scanning transmission electron microscope at a magnification of 1 million times are formed and intersections of each lattice are used as a measurement point for determining a sulfur concentration, there is a measurement point at which the sulfur concentration is higher as compared to the sulfur concentration of the copper foil. | 10-30-2014 |
20140318953 | SPUTTERING TARGET AND MANUFACTURING METHOD THEREFOR - A backing plate integrated sputtering target includes a flange part having a Vicker's hardness (Hv) of 90 or more and a 0.2% yield stress of 6.98×10 | 10-30-2014 |
20140311902 | Magnetic Material Sputtering Target and Manufacturing Method Thereof - Provided is an oxide-containing magnetic material sputtering target wherein the oxides have an average grain diameter of 400 nm or less. Also provided is a method of producing an oxide-containing magnetic material sputtering target. The method involves depositing a magnetic material on a substrate by the PVD or CVD method, then removing the substrate from the deposited magnetic material, pulverizing the material to obtain a raw material for the target, and further sintering the raw material. An object of the present invention is to provide a magnetic material target, in particular a nonmagnetic grain-dispersed ferromagnetic sputtering target capable of suppressing discharge abnormalities of oxides that are the cause of particle generation during sputtering. | 10-23-2014 |
20140295322 | MATERIAL FUEL CELL SEPARATOR, FUEL CELL SEPARATOR USING SAME, FUEL CELL STACK, AND METHOD OF PRODUCING FUEL CELL SEPARATOR MATERIAL - A material for fuel cell separator, wherein a surface layer | 10-02-2014 |
20140284212 | Sintered Compact Magnesium Oxide Target for Sputtering, and Method for Producing Same - A sintered compact magnesium oxide target for sputtering having a purity of 99.99 wt % or higher excluding C, a density of 3.57 g/cm | 09-25-2014 |
20140264197 | Indium Oxide Transparent Conductive Film - An indium oxide sintered compact containing zirconium as an additive, wherein the ratio of atomic concentration of zirconium to the sum of the atomic concentration of indium and the atomic concentration of zirconium is in the range of 0.5 to 4%, the relative density is 99.3% or higher, and the bulk resistance is 0.5 mΩ·cm or less. An indium oxide transparent conductive film of high transmittance in the visible light region and the infrared region, with low film resistivity, and in which the crystallization temperature can be controlled, as well as the manufacturing method thereof, and an oxide sintered compact for use in producing such transparent conductive film are provided. | 09-18-2014 |
20140251802 | TITANIUM TARGET FOR SPUTTERING - A high-purity titanium target for sputtering containing 0.5 to 5 mass ppm of S as an additive component, wherein the purity of the target excluding additive components and gas components is 99.995 mass percent or higher. An object of this invention is to provide a high-quality titanium target for sputtering which is free from fractures and cracks during high-power sputtering (high-rate sputtering) and is capable of stabilizing the sputtering characteristics. | 09-11-2014 |
20140246399 | COPPER FOIL FOR PRODUCING GRAPHENE, PRODUCTION METHOD THEREOF AND METHOD OF PRODUCING GRAPHENE - A copper foil for producing graphene having a ratio (Ra | 09-04-2014 |
20140216650 | COPPER FOIL FOR PRODUCING GRAPHENE AND METHOD OF PRODUCING GRAPHENE USING THE SAME - A copper foil for producing graphene, having 60 degree gloss of 500% in a rolling direction and a direction transverse to rolling direction, and an average crystal grain size of 200 μm or more after heating at 1000° C. for 1 hour in an atmosphere containing 20% by volume or more of hydrogen and balance argon. | 08-07-2014 |
20140199203 | HIGH-PURITY LANTHANUM, METHOD FOR PRODUCING SAME, SPUTTERING TARGET COMPRISING HIGH-PURITY LANTHANUM, AND METAL GATE FILM COMPRISING HIGH-PURITY LANTHANUM AS MAIN COMPONENT - A high-purity lanthanum, characterized by having a purity of 5N or more excluding rare earth elements and gas components, and α-ray count number of 0.001 cph/cm | 07-17-2014 |
20140196841 | COPPER FOIL FOR PRODUCING GRAPHENE AND METHOD OF PRODUCING GRAPHENE USING THE SAME - A copper foil for producing graphene, including oxides and sulfides each having a diameter of 0.5 μm or more having a total number of 15/mm | 07-17-2014 |
20140193655 | COPPER ALLOY SHEET WITH EXCELLENT HEAT DISSIPATION AND WORKABILITY IN REPETITIVE BENDING - Provided is a copper alloy plate that is for an FPC substrate and that has superior heat dissipation, repeated bending workability, shape retaining properties, and heat resistance. The copper alloy plate contains at least 0.01 mass % of the total of at least one element selected from the group consisting of Ag, Cr, Fe, In, Ni, P, Si, Sn, Ti, Zn, and Zr, contains no more than 1.0 mass % of Ag, no more than 0.08 mass % of Ti, no more than 2.0 mass % of Ni, no more than 3.5 mass % of Zn, and no more than 0.5 mass % of Cr, Fe, In, P, Si, Sn, and Zr by the total of the at least one element selected from the group, the remainder comprising Cu and impurities, has a conductivity of at least 60% IACS, has a tensile strength of at least 350 MPa, and has I(311)/IO(311) determined by X-ray diffraction in the thickness direction of the plate surface that satisfies the formula I(311)/IO(311)≧0.5. | 07-10-2014 |
20140183160 | COPPER FOIL FOR PRODUCING GRAPHENE AND METHOD OF PRODUCING GRAPHENE USING THE SAME - A copper foil for producing graphene, including oxides and sulfides each having a diameter of 0.5 μm or more having a total number of 15/mm | 07-03-2014 |
20140174917 | Recycling Method for Tantalum Coil for Sputtering and Tantalum Coil Obtained by the Recycling Method - The present invention relates to a method for recycling a tantalum coil for sputtering that is disposed between a substrate and a sputtering target. The method for recycling a tantalum coil for sputtering is characterized in that the whole or partial surface of a spent tantalum coil is subject to cutting (cutting is performed until a re-deposited film and knurling traces are eliminated) so as to eliminate the re-deposited film that was formed during sputtering, and knurling is newly performed to the cut portion. While sputtered grains are accumulated (re-deposited) on the surface of the tantalum coil disposed between the substrate and the sputtering target during sputtering, by eliminating the sputtered grains accumulated on the spent coil by way of cutting after the sputtering is complete, the tantalum coil can be efficiently recycled. Thus, provided is technology capable of lean manufacturing of new coils, improving productivity, and stably providing such coils. | 06-26-2014 |
20140166481 | Fe-Al Based Alloy Sputtering Target - Provided is a Fe—Al alloy sputtering target having an Al content of 1 to 23 at %, an oxygen content of 100 wt ppm or less, and the balance being Fe and inevitable impurities. Also, provided is a method of producing a Fe—Al alloy sputtering target having an Al content of 1 to 23 at %, an oxygen content of 100 wt ppm or less, and the balance being Fe and inevitable impurities, the method in which: a Fe raw material and an Al raw material, i.e., 1 to 23 at % of Al and the balance being Fe and inevitable impurities, are melted at a melting temperature of 1200 to 1600° C. and an average rate of raising temperature of 300° C./hr or more (wherein, when the Al content is 15 to 23 at %, the melting is performed at a melting temperature in the range of 1400 to 1600° C. and an average rate of raising temperature of 320° C./hr or more or at a melting temperature from 1200° C. to less than 1400° C.; and when the Al content is 1 to 15%, the melting is performed in an Ar atmosphere at a melting temperature in the range of 1200 to 1600° C. and an average rate of raising temperature of 300° C./hr or more or is performed in the air at a melting temperature in the range of 1200 to 1600° C. and an average rate of raising temperature of 320° C./hr or more); and the melted materials are cast, followed by rolling and machining. The present invention aims at providing a Fe—Al-based sputtering target having a reduced oxygen content, and providing a high-density sputtering target that can reduce occurrence of the phenomenon of abnormal discharge (micro arcing) and occurrence of particles during sputtering. | 06-19-2014 |
20140162084 | COPPER FOIL COMPOSITE, COPPER FOIL USED FOR THE SAME, FORMED PRODUCT AND METHOD OF PRODUCING THE SAME - A copper foil composite comprising a copper foil and a resin layer laminated, the copper foil containing at least one selected from the group consisting of Sn, Mn, Cr, Zn, Zr, Mg, Ni, Si and Ag at a total of 30 to 500 mass ppm, a tensile strength of the copper foil having of 100 to 180 MPa, a degree of aggregation I200/I | 06-12-2014 |
20140158546 | ELECTROLYTIC COPPER PLATING SOLUTION FOR FILLING FOR FORMING MICROWIRING OF COPPER FOR ULSI - An electrolytic copper plating solution for filling for forming microwiring for ULSI, is characterized in that it has a pH of from 1.8 to 3.0. The electrolytic copper plating solution preferably contains a saturated carboxylic acid having from 1 to 4 carbon atoms at a concentration from 0.01 to 2.0 mol/L. | 06-12-2014 |
20140158532 | HIGH-PURITY COPPER-MANGANESE-ALLOY SPUTTERING TARGET - Provided is a high-purity copper-manganese-alloy sputtering target comprising 0.05 to 20 wt. % of Mn, 2 wt ppm or less of C, and the remainder being Cu and inevitable impurities, wherein in formation of a film on a wafer by sputtering the target, the number of particles composed of C, at least one element selected from Mn, Si, and Mg, or a compound composed of C and at least one element selected from Mn, Si, and Mg and having a diameter of 0.20 μm or more is 30 or less on average. Particle generation during sputtering can be effectively suppressed by thus adding an appropriate amount of Mn element to copper and controlling the amount of carbon. In particular, a high-purity copper-manganese-alloy sputtering target that is useful for forming semiconductor copper alloy line having a self-diffusion suppression function is provided. | 06-12-2014 |
20140140884 | HIGH-PURITY YTTRIUM, PROCESS OF PRODUCING HIGH-PURITY YTTRIUM, HIGH-PURITY YTTRIUM SPUTTERING TARGET, METAL GATE FILM DEPOSITED WITH HIGH-PURITY YTTRIUM SPUTTERING TARGET, AND SEMICONDUCTOR ELEMENT AND DEVICE EQUIPPED WITH THE METAL GATE FILM - Provided are high-purity yttrium and a high-purity yttrium sputtering target each having a purity, excluding rare earth elements and gas components, of 5 N or more and containing 1 wt ppm or less of each of Al, Fe, and Cu; a method of producing high-purity yttrium by molten salt electrolysis of a raw material being a crude yttrium oxide having a purity, excluding gas components, of 4N or less at a bath temperature of 500° C. to 800° C. to obtain yttrium crystals, desalting treatment, water washing, and drying of the yttrium crystals, and then electron beam melting for removing volatile materials to achieve a purity, excluding rare earth elements and gas components, of 5N or more; and a technology capable of efficiently and stably providing high-purity yttrium, a sputtering target composed of the high-purity yttrium, and a metal-gate thin film mainly composed of the high-purity yttrium. | 05-22-2014 |
20140124366 | HIGH-PURITY ERBIUM, SPUTTERING TARGET COMPRISING HIGH-PURITY ERBIUM, METAL GATE FILM HAVING HIGH-PURITY ERBIUM AS MAIN COMPONENT THEREOF, AND PRODUCTION METHOD FOR HIGH-PURITY ERBIUM - High-purity erbium having a purity of 5N or higher excluding rare earth elements and gas components, and containing Al, Fe, Cu, and Ta each in an amount of 1 wtppm or less, W in an amount of 10 wtppm or less, carbon in an amount of 150 wtppm or less, alkali metals and alkali earth metals each in an amount of 1 wtppm or less, other transition metal elements in a total amount of 10 wtppm or less, and U and Th as radioactive elements each in an amount of 10 wtppb or less. An object of this invention is to provide a method of highly purifying erbium, which has a high vapor pressure and is difficult to refine in a molten state, as well as technology for efficiently and stably providing high-purity erbium obtained with the foregoing method, a sputtering target made of high-purity erbium, and a metal gate film having high-purity erbium as a main component thereof. | 05-08-2014 |
20140110849 | Copper-Titanium Alloy Sputtering Target, Semiconductor Wiring Line Formed Using the Sputtering Target, and Semiconductor Element and Device Each Equipped with the Semiconductor Wiring Line - A copper-titanium alloy sputtering target comprising 3 at % or more and less than 15 at % of Ti and a remainder made up of Cu and unavoidable impurities, wherein a variation (standard deviation) in hardness is within 5.0 and a variation (standard deviation) in electric resistance is within 1.0 in an in-plane direction of the target. Provided are: a sputtering target for forming a copper-titanium alloy wiring line for semiconductors capable of causing the copper alloy wiring line for semiconductors to be equipped with a self-diffusion suppressive function, effectively preventing contamination around the wiring line caused by diffusion of active Cu, improving electromigration (EM) resistance, corrosion resistance and the like, enabling the arbitrary formation of a barrier layer in a simple manner, and uniformizing film properties; a copper-titanium alloy wiring line for semiconductors; and a semiconductor element and a device each equipped with the semiconductor wiring line. | 04-24-2014 |
20140097084 | High-Purity Copper-Manganese-Alloy Sputtering Target - Provided is a high-purity copper-manganese-alloy sputtering target comprising 0.05 to 20 wt % of Mn and the remainder being Cu and inevitable impurities. The high-purity copper-manganese-alloy sputtering target is characterized in that the in-plane variation (CV value) in Mn concentration of the target is 3% or less. It is thus possible to form a thin film having excellent uniformity by adding an appropriate amount of a Mn element to copper and reducing the in-plane variation of the sputtering target. In particular, there is provided a high-purity copper-manganese-alloy sputtering target which is useful for improving the yield and the reliability of semiconductor products which are making progress in a degree of refinement and integration. | 04-10-2014 |
20140093743 | Liquid Crystal Polymer Copper-Clad Laminate and Copper Foil Used For Said Laminate - Provided is a copper-clad laminate obtainable by bonding a copper foil on which roughening treatment including copper-cobalt-nickel alloy plating is performed and a liquid crystal polymer to each other, wherein the copper-clad laminate is free from a roughening particle residue on a surface of the liquid crystal polymer resin after copper foil circuit etching. The copper-clad laminate obtainable by bonding a copper foil and a liquid crystal polymer to each other, wherein the copper foil includes a copper primary particle layer formed on a surface bonded to the liquid crystal polymer and a secondary particle layer formed on the primary particle layer and made from a ternary alloy including copper, cobalt, and nickel; the primary particle layer has an average particle size of 0.25 to 0.45 μm; and the secondary particle layer has an average particle size of 0.05 to 0.25 μm. | 04-03-2014 |
20140083847 | Fe-Pt-C Based Sputtering Target - Provided is a sintered sputtering target having a composition by atomic ratio represented by the formula: (Fe | 03-27-2014 |
20140065441 | CO-SI BASED COPPER ALLOY PLATE - A Co—Si based copper alloy plate, comprising: Co: 0.5 to 3.0% by mass, Si: 0.1 to 1.0% by mass and the balance Cu with inevitable impurities, wherein the Co—Si based copper alloy plate satisfies the relationship {(60 degree specular gloss G(RD) in a rolling direction)−(60 degree specular gloss G(TD) in a direction transverse to rolling direction)}≧90%. | 03-06-2014 |
20140057123 | COPPER FOIL FOR PRINTED CIRCUIT - Provided is a copper foil with surface treated layers, wherein a copper foil or a copper alloy foil includes a plurality of surface treated layers configured from a roughened layer formed on the copper foil or the copper alloy foil by roughening treatment, a heat-resistant layer made from a Ni—Co layer formed on the roughened layer, and a weathering layer and a rust-preventive layer which contain Zn, Ni, and Cr and is formed on the heat-resistant layer, and the surface treated layers having a (total Zn)/[(total Zn)+(total Ni)] ratio of 0.13 or more and 0.23 or less. In a copper foil clad laminate which uses a copper foil for a printed circuit obtained by performing roughening treatment on a surface of a copper foil and then forming a heat-resistant layer and a rust-preventive layer thereon, and to which silane coupling treatment is subsequently performed, the copper foil for a printed circuit can further inhibit the deterioration in adhesion caused by the acid infiltration into the interface of the copper foil circuit and the substrate resin upon performing acid treatment or chemical etching to the substrate after forming a fine-pattern printed circuit. Thus, the copper foil for printed circuit has superior acid-resistant adhesive strength and superior alkali etchability. | 02-27-2014 |
20140041910 | Metal Foil Provided with Electrically Resistive Layer, and Board for Printed Circuit Using Said Metal Foil - Metal foil provided with an electrically resistive layer, characterized in that an alloy (in particular, a NiCrAlSi alloy) resistive layer containing 1 to 6 mass % of Si is formed on the metal foil controlled to have a ten-point average roughness Rz, which was measured by an optical method, of 4.0 to 6.0 μm, and the variation in the resistance value of the electrically resistive layer is within ±10%. Provided is a copper foil that allows embedding of a resistive material in a board by further forming an electrically resistive layer on the copper foil, and further allows improving the adhesiveness and suppressing the variation in resistance value within a certain range. As needed, metal foil provided in advance with a copper-zinc alloy layer formed on the surface thereof and a stabilizing layer composed of at least one component selected from zinc oxide, chromium oxide, and nickel oxide formed on the copper-zinc alloy layer is used. | 02-13-2014 |
20140037976 | Rolled Copper or Copper-Alloy Foil Provided with Roughened Surface - Provided is a rolled copper or copper-alloy foil having a roughened surface, the rolled copper or copper-alloy foil subjected to roughening treatment with copper fine grains wherein a copper base plating layer is provided between the copper roughened layer and the rolled copper or copper-alloy foil. An object of the present invention is to provide a roughened rolled copper-alloy foil having fewer craters, the presence of which is a serious disadvantage unique to a rolled copper-alloy foil having a roughened surface. In particular, provided is a rolled copper or copper-alloy foil in which the development of craters caused by inclusions present in or near a surface of the base material can be controlled. | 02-06-2014 |
20140030591 | ELECTROLYTIC COPPER FOIL FOR AN ANODE OF A NEGATIVE ELECTRODE COLLECTOR IN A SECONDARY BATTERY AND METHOD OF PRODUCING THE SAME - The present invention provides an electrolytic copper foil which is excellent in the extension property and can endure the change in the expansion and contraction at the fine units while having high strength, and a method of producing the same. Specifically, the electrolytic copper foil for a negative electrode collector in a secondary battery, wherein in a nominal stress strain curve, a tensile strength is 45 to 70 kg/mm | 01-30-2014 |
20140027277 | Titanium Target for Sputtering - A high-purity titanium target for sputtering, which contains, as additive components, one or more elements selected from Al, Si, S, Cl, Cr, Fe, Ni, As, Zr, Sn, Sb, B, and La in a total amount of 3 to 100 mass ppm, and of which the purity excluding additive components and gas components is 99.99 mass % or higher. An object of this invention is to provide a high-quality titanium target for sputtering, which is free from fractures and cracks during high-power sputtering (high-rate sputtering) and capable of stabilizing the sputtering characteristics. | 01-30-2014 |
20140023881 | Liquid Crystal Polymer Film Based Copper-Clad Laminate and Method for Producing Same - Provided is a liquid crystal polymer film based copper-clad laminate characterized in that a surface of one side or each of both sides of a liquid crystal polymer film has a nitrogen atom content of 10 at % or more, and a metal conductor layer formed by dry plating and/or wet painting is provided on the surface of the liquid crystal polymer film having the nitrogen atom content of 10 at % or more. The liquid crystal polymer film based copper-clad laminate is characterized by having arithmetic average roughness Ra of 0.15 μm or less and a root-mean-square roughness Rq of 0.20 μm or less as surface roughness of the liquid crystal polymer film. Also provided is a method for producing a liquid crystal polymer film based copper-clad laminate characterized by performing plasma processing on the surface of the liquid crystal polymer film under a nitrogen atmosphere at a gas pressure of 2.6 to 15 Pa, followed by forming the metal conductor layer by dry plating and/or wet plating. | 01-23-2014 |
20140023868 | Sputtering Target of Sintered Ti-Nb Based Oxide, Thin Film of Ti-Nb Based Oxide, and Method of Producing The Thin Film - A sputtering target of sintered Ti—Nb based oxide is provided. The sputtering target consists of titanium (Ti), niobium (Nb), and remainder being oxygen and unavoidable impurities, and the atomic ratio of Ti and Nb is 0.39≦(Nb/(Ti+Nb))≦0.79. The sputtering target of sintered Ti—Nb based oxide has a high refractive index and a low extinction coefficient. Also provided is a thin film of Ti—Nb based oxide obtained by using the foregoing target, which enables high-rate deposition. The thin film has superior transmittance, is subject to minimal reduction and variation of reflectivity, and is useful as an interference or protective film of an optical information recording medium, or as a part of a constituent layer of an optical recording medium. The thin film can also be applied to a glass substrate; that is, it can be used as a heat reflecting or antireflection film, or an interference filter. | 01-23-2014 |
20140017513 | Two-Layered Copper-Clad Laminate Material, and Method for Producing Same - A two-layered copper-clad laminate material in which a copper layer having a thickness of | 01-16-2014 |
20140015635 | METAL FOIL HAVING ELECTRICAL RESISTANCE LAYER, AND MANUFACTURING METHOD FOR SAME - The present invention provides a metal foil provided with an electrical resistance layer, in which peeling between the metal foil and the electrical resistance layer disposed on the metal foil can be prevented and variation in the resistivity of the resistance layer can be reduced, and a method of manufacturing the same. The present invention includes a metal foil with an electrical resistance layer including a metal foil having a surface of a ten-point mean roughness Rz, which is measured by an optical method according to 1 μm or less and the surface being treated by irradiation with ion beams at an ion beam intensity of 0.70-2.10 sec·W/cm | 01-16-2014 |
20140014498 | METHOD FOR MANUFACTURING METAL FOIL PROVIDED WITH ELECTRICAL RESISTANCE LAYER - The present invention provides a method for producing a metal foil with an electric resistance layer which can stably obtain electric characteristics of a resistive element, suppress peeling between the metal foil and the electric resistance layer disposed on the metal foil, and realize a high sheet resistance value and the method includes forming an electric resistance layer on a metal foil having a 10-point average roughness Rz, which is measured by the optical method according to 1 μm or less and whose surface is treated by irradiation with ion beams at an ion beam intensity of 0.70 to 2.10 sec·W/cm | 01-16-2014 |
20140014241 | STRIP OF Cu-Co-Si-BASED COPPER ALLOY FOR ELECTRONIC MATERIALS AND THE METHOD FOR PRODUCING THE SAME - Cu—Co—Si-based alloy strip, which has not only an excellent balance between strength and electrical conductivity but also suppressed hanging curl, is provided. The copper alloy strip for electronic materials comprises 0.5-2.5 mass % of Co, 0.1-0.7 mass % of Si, the balance Cu and inevitable impurities, wherein, from a result obtained from measurement of an X ray diffraction pole figure, using a rolled surface as a reference plane, the following (a) is satisfied.
| 01-16-2014 |
20140014240 | Cu-Si-Co-BASED COPPER ALLOY FOR ELECTRONIC MATERIALS AND METHOD FOR PRODUCING THE SAME - A Cu—Si—Co-based alloy having an enhanced spring limit is provided. The copper alloy comprises 0.5-2.5 mass % of Co, 0.1-0.7 mass % of Si, the balance Cu and inevitable impurities, wherein, from a result obtained from measurement of an X ray diffraction pole figure, using a rolled surface as a reference plane, a peak height at β angle of 90° among diffraction peaks in {111} Cu plane with respect to {200} Cu plane by β scanning at α=35° is at least 2.5 times that of a standard copper powder. | 01-16-2014 |
20140011047 | Two-Layered Copper-Clad Laminate Material, and Method for Producing Same - A two-layered copper-clad laminate material, in which one surface or both surfaces of a polyimide film having a thickness of 12.5 to 50 μm is subjected to a modification treatment by means of a glow discharge plasma treatment in an oxygen gas atmosphere, and a copper layer having a thickness of 1 to 5 μm is formed by means of sputtering or electroplating on one surface or both surfaces of the polyimide film after the modification treatment; characterized in that the integrated intensity ratio of a C1S peak at 287 to 290 eV to a C1S peak at 283 to 287 eV, obtained by analyzing the photoelectron spectroscopy (XPS) spectra of the surface of the polyimide film after the plasma treatment, is within the range of 0.03 to 0.11. The present invention aims at discovering; as a consequence of performing surface characterization by subjecting the PI film surface to XPS analysis before and after the plasma treatment, and of evaluating the dissolution properties and adhesive strength of the PI film before and after the plasma treatment; a two-layered copper-clad laminate material that is ideal to be processed during a wet PI etching step, and a production method for said two-layered copper-clad laminate material. | 01-09-2014 |
20140010705 | COPPER OR COPPER REDUCED IN ALPHA RAY EMISSION, AND BONDING WIRE OBTAINED FROM THE COPPER OR COPPER ALLOY AS RAW MATERIAL - Copper or a copper alloy characterized in having an α-ray emission of 0.001 cph/cm | 01-09-2014 |
20140001039 | Cu-Ga Alloy Sputtering Target and Method for Producing Same | 01-02-2014 |
20140001038 | Ferromagnetic Sputtering Target with Less Particle Generation | 01-02-2014 |
20130344322 | Metal Foil Provided with Electrically Resistive Film, and Method for Producing Same - Provided are: a metal foil provided with an electrically resistive film comprising nickel, chromium, silicon and oxygen; the metal foil provided with an electrically resistive film having an oxygen concentration of 20 to 60 at %; the metal foil provided with an electrically resistive film having chromium (Cr) and silicon (Si) concentrations (at %) satisfying that Cr/(Cr+Si)×100 [%] is 73 to 79%; and the metal foil provided with an electrically resistive film having a nickel (Ni) concentration of 2 to 10 at %. | 12-26-2013 |
20130341622 | Polycrystalline Silicon Wafer - Provided is a polycrystalline silicon wafer produced by a melting and unidirectional solidification method, where the polycrystalline silicon wafer has a diameter of 450 mm or more, a thickness of 900 μm or more, and an average crystal grain size of 5 to 50 mm, and is made up of one piece. The present invention provides a large-sized polycrystalline silicon wafer having a wafer size of 450 mm or more, of which: mechanical properties are similar to those of monocrystalline silicon wafers; the crystal size is large; the surface roughness is low; the surface has a high cleanliness; the polished surface has less unevenness by having a definite crystal orientation; and the sag value is similar to that of monocrystalline silicon wafers. | 12-26-2013 |
20130341184 | Co-Cr-Pt-B-Based Alloy Sputtering Target and Method for Producing Same - Provided is a Co—Cr—Pt—B-based alloy sputtering target having no more than 10 cracks of 0.1 to 20 μm in a B-rich phase in a 100 μm×100 μm area (field of view). Additionally provided is a method for producing this Co—Cr—Pt—B-based alloy sputtering target including the steps of hot forging or hot rolling a Co—Cr—Pt—B-based alloy cast ingot, thereafter performing cold rolling or cold forging thereto at an elongation rate of 4% or less, and machining the ingot to prepare a target having no more than 10 cracks of 0.1 to 20 μm in a B-rich phase in a 100 μm×100 μm area (field of view), or, hot forging or hot rolling the ingot, thereafter quenching the ingot to −196° C. to 100° C., and machining the ingot to prepare a target. The target of the present invention has high magnetic flux density and few microcracks in a B-rich layer, and thus stabilizes discharge and minimizes arcing. | 12-26-2013 |
20130319527 | Cu-Ga Target, Method of Producing Same, Light-absorbing Layer Formed from Cu-Ga Based Alloy Film, and CIGS System Solar Cell Having the Light-absorbing Layer - A Cu—Ga alloy sintered-compact sputtering target having a Ga concentration of 40 to 50 at % and Cu as the balance, wherein the sintered-compact sputtering target is characterized in that the relative density is 80% or higher, and the compositional deviation of the Ga concentration is within ±0.5 at % of the intended composition. A method of producing a Cu—Ga alloy sintered-compact sputtering target having a Ga concentration of 40 to 50 at % and Cu as the balance, wherein the method thereof is characterized in that Cu and Ga raw materials are melted and cooled/pulverized to produce a Cu—Ga alloy raw material powder, and the obtained material powder is further hot-pressed with a retention temperature being between the melting point of the mixed raw material powder and a temperature 15° C. lower than the melting point and with a pressure of 400 kgf/cm | 12-05-2013 |
20130316239 | POSITIVE ELECTRODE ACTIVE MATERIAL FOR LITHIUM ION BATTERIES, POSITIVE ELECTRODE FOR LITHIUM ION BATTERIES, AND LITHIUM ION BATTERY - The present invention provides a positive electrode active material for lithium ion batteries having satisfactory battery characteristics. The positive electrode active material for lithium ion batteries, is represented by the following composition formula: | 11-28-2013 |
20130313659 | Method for Producing High-Purity Lanthanum, High-Purity Lanthanum, Sputtering Target Formed from High-Purity Lanthanum, and Metal Gate Film Having Highy-Purity Lanthanum as Main Component - The present invention addresses the problem of providing a technique capable of efficiently and stably providing a method for producing high-purity lanthanum, the method characterized in that: a crude lanthanum oxide starting material having a purity of 2N-5N, excluding gas components, is used; the material is subjected to molten salt electrolysis at a bath temperature of 450-700° C. to produce lanthanum crystals; the lanthanum crystals are subsequently desalted: and electron beam melting is then performed to remove volatile substances. The present invention also addresses the problem of providing a technique capable of efficiently and stably providing high-purity lanthanum, high-purity lanthanum itself, a sputtering target formed from high-purity material lanthanum; and a thin film for metal gates that has high purity lanthanum as the main component. | 11-28-2013 |
20130306470 | Sputtering Target for Magnetic Recording Film - A sputtering target for a magnetic recording film which contains carbon, the sputtering target is characterized in that the ratio (I | 11-21-2013 |
20130302205 | High Purity Copper and Method of Producing High Purity Copper Based on Electrolysis - High purity copper having a purity of 6N or higher, wherein content of each of the respective components of P, S, 0, and C is 1 ppm or less, and nonmetal inclusions having a particle size of 0.5 μm or more and 20 μm or less contained in the copper are 10,000 inclusions/g or less. As a result of using high purity copper or high purity copper alloy as the raw material from which harmful P, S, C, O-based inclusions have been reduced and controlling the existence form of nonmetal inclusions, it is possible to reduce the occurrence of rupture of a bonding wire and improve the reproducibility of mechanical properties, or reduce the percent defect of a semiconductor device wiring formed by sputtering a high purity copper target with favorable reproducibility. | 11-14-2013 |
20130292245 | FE-PT-Based Ferromagnetic Sputtering Target and Method for Producing Same - A ferromagnetic sputtering target having a composition comprising 5 to 50 mol % of Pt, 5 to 15 mol % of SiO | 11-07-2013 |
20130284323 | Cu-Co-Si-Zr ALLOY MATERIAL AND MANUFACTURING METHOD THEREOF - The present invention relates to a Cu—Co—Si—Zr alloy material which contains 1.0-2.5 wt % of Co, 0.2-0.7 wt % of Si and 0.001-0.5 wt % of Zr with the elemental ratio Co/Si being 3.5-5.0. The Cu—Co—Si—Zr alloy material contains second phase particles having a diameter of 0.20 μm or more but less than 1.00 μm at a density of 3,000-500,000 particles/mm | 10-31-2013 |
20130280896 | APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICON AND METHOD THEREFOR - To provide an apparatus for producing polycrystalline silicon and a method therefor to allow improvement in efficiency of polycrystalline silicon production by minimizing reactor downtime and to allow polycrystalline silicon production at a relatively low cost and in a large amount in a zinc reduction process for recovering formed silicon in a solid state. In a silicon producing apparatus for producing polycrystalline silicon by reducing silicon tetrachloride with zinc, vertical reactor | 10-24-2013 |
20130277214 | Method of Storing Metal Lanthanum Target, Vacuum-sealed Metal Lanthanum Target, and Thin Film Formed by Sputtering the Metal Lanthanum Target - A method of storing a metal lanthanum sputtering target, wherein a surface of a metal lanthanum target to be stored is processed so as to achieve a roughness Ra of 1 μm or less, a lanthanum fluoride coating is formed on the surface thereof, the metal lanthanum target to which the lanthanum fluoride coating was formed is subsequently charged in a vacuum pack with an oxygen transmission rate of 0.1 cm | 10-24-2013 |
20130270108 | Indium Sputtering Target And Method For Manufacturing Same - An indium sputtering target with a short time to attain a stable film deposition rate once sputtering has begun is provided. An indium sputtering target having a surface to be sputtered with an arithmetic average roughness Ra of from 5 μm to 70 μm prior to sputtering. | 10-17-2013 |
20130263978 | Cu-Ni-Si-Co COPPER ALLOY FOR ELECTRONIC MATERIALS AND MANUFACTURING METHOD THEREOF - Cu—Ni—Si—Co copper alloy strip having excellent balance between strength and electrical conductivity which can prevent the drooping curl is provided. The copper alloy strip for an electronic materials contains 1.0-2.5% by mass of Ni, 0.5-2.5% by mass of Co, 0.3-1.2% by mass of Si, and the remainder comprising Cu and unavoidable impurities, wherein the copper alloy strip satisfies both of the following (a) and (b) as determined by means of X-ray diffraction pole figure measurement based on a rolled surface: (a) among a diffraction peak intensities obtained by β scanning at α=20° in a {200} pole figure, a peak height at β angle 145° is not more than 5.2 times that of standard copper powder; (b) among a diffraction peak intensities obtained by β scanning at α=75° in a {111} pole figure, a peak height at β angle 185° is not less than 3.4 times that of standard copper powder. | 10-10-2013 |
20130256140 | ELECTROLYTIC COPPER FOIL - Provided is an electrolytic copper foil having a surface roughness Rz of 2.0 μm or less, wherein a foil thickness difference in the width direction is 1.5% or less. Also provided is the electrolytic copper foil, wherein the foil thickness difference in the width direction is 1.3% or less. Further provided is the electrolytic copper foil, wherein a variation in the roughness in the width direction (Rzmax−Rzmin)/Rzavg is 15% or less. An object of the present invention is to provide an electrolytic copper foil having low surface roughness, wherein the formation of an “elongation wrinkle” and a discolored streak along the length direction is suppressed by allowing the thickness to be uniform in the width and length directions. | 10-03-2013 |
20130256006 | Method for Forming Circuit on Flexible Laminate Substrate - A method for forming a circuit on a flexible laminate substrate, wherein when a circuit is formed using an adhesive-free flexible laminate having a polyimide film that serves as a flexible laminate substrate at least one surface of which is plasma-treated, a tie-coat layer A formed on the polyimide film, a metal conductor layer B formed on the tie-coat layer, and a nickel-copper alloy layer as an alloy layer C on the metal conductor layer, a photoresist is applied on the alloy layer C formed on the metal conductor layer, the photoresist is exposed and developed, the sputter layer C, the metal conductor layer B, and the alloy layer C are removed by etching using the same etching solution so as to retain a circuit portion, and the photoresist of the circuit portion is further removed so as to form the circuit. | 10-03-2013 |
20130252019 | Copper-Clad Laminate and Method for Manufacturing Same - Provided is a copper-clad laminate comprising a metal conductor layer formed by dry plating and/or wet plating on a surface obtained by subjecting a surface of a liquid crystal polymer film to plasma treatment in an oxygen atmosphere or a nitrogen atmosphere at a gas pressure of 2.6 to 15 Pa. Further provided is a copper-clad laminate comprising a liquid crystal polymer film having a surface roughness after the plasma treatment of 0.15 μm or less in terms of arithmetic mean roughness Ra and 0.20 μm or less in terms of root-mean-square roughness Rq. Further provided is a method for manufacturing a copper-clad laminate, wherein a metal conductor layer is formed by dry plating and/or wet plating after subjecting a surface of a liquid crystal polymer film to plasma treatment in an oxygen atmosphere or a nitrogen atmosphere at a gas pressure of 2.6 to 15 Pa. | 09-26-2013 |
20130248362 | Sputtering Target for Magnetic Recording Film and Process for Production Thereof - A sputtering target for a magnetic recording film containing SiO | 09-26-2013 |
20130247998 | METHOD FOR FEEDING ZINC GAS AND APPARATUS THEREFOR - To provide a method and an apparatus for feeding a zinc gas superheated to a boiling point of zinc or higher at a controlled rate of feed. The method for feeding the zinc gas according to the invention includes a step for introducing melt zinc into a zinc gas evaporation apparatus, a step for generating the zinc gas from the melt zinc by inputting electric power corresponding to a rate of feed of the zinc gas to allow zinc to cause self-heating by high-frequency induction heating, a step for introducing the generated zinc gas into a gas heating apparatus, and a step for heating the zinc gas by resistance heating to form a superheated zinc gas. An apparatus for feeding the zinc gas according to the invention is applied to the method, and includes a zinc gas evaporation apparatus, a gas heating apparatus and a control apparatus. | 09-26-2013 |
20130247720 | METHOD FOR LEACHING COPPER FROM COPPER SULFIDE ORE - The present invention provides a method of leaching copper from a copper sulfide ore, wherein operating costs and environmental impacts can be effectively reduced. The present invention is a method of leaching copper from a copper sulfide ore by a process of leaching a layer of stacked ores, wherein the leaching solution containing Fe (III) ion and other leaching solution containing iodide ion are fed through routes independent of each other to a layer of stacked ores containing a copper sulfide ore. | 09-26-2013 |
20130244129 | FUEL CELL SEPARATOR MATERIAL, AND FUEL CELL STACK USING THE SAME - Provided are: a separator material for a fuel cell, in which a uniform first Au-plated layer having a thickness of | 09-19-2013 |
20130241010 | Production Method for High-Purity Lanthanum, High-Purity Lanthanum, Sputtering Target Composed of High-Purity Lanthanum, and Metal Gate Film Containing High-Purity Lanthanum as Main Component - A method for producing high-purity lanthanum having a purity of 4N or more excluding rare earth elements other than lanthanum and gas components, wherein lanthanum having a purity of 4N or more is produced by reducing, with distilled calcium, a lanthanum fluoride starting material that has a purity of 4N or more excluding rare earth elements other than lanthanum and gas components, and the obtained lanthanum is subjected to electron beam melting to remove volatile substances. The method for producing high-purity lanthanum, in which Al, Fe, and Cu are respectively contained in the amount of 10 wtppm or less. The method for producing high-purity lanthanum, in which total content of gas components is 1000 wtppm or less. The present invention aims to provide a technique capable of efficiently and stably providing high-purity lanthanum, a sputtering target composed of high-purity lanthanum, and a thin film for metal gate that contains high-purity lanthanum as a main component. | 09-19-2013 |
20130240257 | COPPER FOIL FOR PRINTED WIRING BOARD - Provided is a copper foil for a printed wiring board, the copper foil being suitable for achieving finer pitch, favorable in terms of manufacturing cost, and excellent both in etching ability and adhesion to an insulating substrate. The copper foil for a printed wiring board comprises a copper foil base material and a covering layer for covering at least a portion of a surface of the copper foil base material, wherein the covering layer is formed by an nickel-vanadium alloy layer containing nickel and vanadium, and a chromium layer, laminated in this order from the surface of the copper foil base material; the chromium layer contains chromium in an amount of 15-210 μg/dm | 09-19-2013 |
20130239752 | METHOD OF LEACHING COPPER ORE - Provided is a method of leaching copper ore which contains chalcopyrite, the method includes a first leaching stage based on an oxidative leaching reaction of copper by iron (III) ion, and a second leaching stage, in succession to the first leaching stage, using a solution containing iodide ion and iron (III) ion. | 09-19-2013 |
20130221271 | Positive Electrode Active Material For Lithium-Ion Battery, Positive Electrode For A Lithium-Ion Battery, Lithium-Ion Battery Using Same, And Precursor To A Positive Electrode Active Material For A Lithium-Ion Battery - The present invention provides a positive electrode active material for lithium ion batteries, which realizes a lithium ion battery that is, while satisfying fundamental characteristics of a battery (capacity, efficiency, load characteristics), low in the resistance and excellent in the lifetime characteristics. In the positive electrode active material for lithium ion batteries, the variation in the composition of transition metal that is a main component inside of particles of or between particles of the positive electrode active material, which is defined as a ratio of the absolute value of the difference between a composition ratio inside of the particles of or in a small area between the particles of the transition metal and a composition ratio in a bulk state to the composition ratio in a bulk state of the transition metal, is 5% or less. | 08-29-2013 |
20130220805 | Sputtering Target-Backing Plate Assembly and Method for Producing Same - Provided is a sputtering target-backing plate assembly wherein a Cu—Cr alloy backing plate is bonded to a Ti target via a layer of a strain absorbing material placed at an interface between the Ti target and the Cu—Cr alloy backing plate. In particular, the present invention relates to a sputtering target-backing plate assembly and a production method thereof, the assembly being capable of absorbing strain at the interface between the target and the backing plate in order to prevent deformation (displacement) during sputtering. An object of the present invention is to solve a problem inherent to Titanium (Ti) and a problem in selecting a backing plate compatible with it. | 08-29-2013 |
20130220804 | Ferromagnetic Material Sputtering Target - Provided is a ferromagnetic material sputtering target having a metal composition comprising 5 mol % or more of Pt and the balance of Co, wherein the target has a structure including a metal base (A) and a phase (B) of a Co—Pt alloy containing 40 to 76 mol % of Pt in the metal base (A). Further provided is a ferromagnetic material sputtering target having a metal composition comprising 5 mol % or more of Pt, 20 mol % or less of Cr, and the balance of Co, wherein the target has a structure including a metal base (A) and a phase (B) of a Co—Pt alloy containing 40 to 76 mol % of Pt in the metal base (A). The present invention provides a ferromagnetic material sputtering target that can improve the leakage magnetic flux to allow stable discharge with a magnetron sputtering device. | 08-29-2013 |
20130220685 | COPPER FOIL FOR PRINTED WIRING BOARD, METHOD FOR PRODUCING SAID COPPER FOIL, RESIN SUBSTRATE FOR PRINTED WIRING BOARD AND PRINTED WIRING BOARD - A copper foil for a printed wiring board, the copper foil being characterized by having, on at least one surface thereof, a roughed layer of the copper foil in which an average diameter at a particle root (D1) corresponding to a distance of 10% of a particle length from the root, is 0.2 μm to 1.0 μm, and a ratio of the particle length (L1) to the average diameter at the particle root (D1) is 15 or less when L1/D1. A copper foil for a printed wiring board, wherein a sum of area covered by holes on an uneven and roughened surface of a resin is 20% or more at a surface of the resin formed by laminating the resin and a copper foil for a printed wiring having a roughened layer and then removing the copper layer by etching. An object of the present invention is to develop a copper foil for a semiconductor package board in which the aforementioned phenomenon of circuit erosion is avoided without deteriorating other properties of the copper foil. In particular, an object of the present invention is to provide a copper foil for a printed wiring board and a producing method thereof, wherein a roughened layer of the copper foil can be improved to enhance the adhesiveness between the copper foil and a resin. | 08-29-2013 |
20130216855 | CARRIER-ATTACHED COPPER FOIL - The present invention provides a carrier-attached copper foil, wherein an ultrathin copper foil is not peeled from the carrier prior to the lamination to an insulating substrate, but can be peeled from the carrier after the lamination to the insulating substrate. A carrier-attached copper foil comprising a copper foil carrier, an intermediate layer laminated on the copper foil carrier, and an ultrathin copper layer laminated on the intermediate layer, wherein the intermediate foil is configured with a Ni layer in contact with an interface of the copper foil carrier and a Cr layer in contact with an interface of the ultrathin copper layer, said Ni layer containing 1,000-40,000 μg/dm | 08-22-2013 |
20130213804 | FERROMAGNETIC MATERIAL SPUTTERING TARGET - Provided is a ferromagnetic material sputtering target comprising a metal having a composition that Cr is contained in an amount of 20 mol % or less, Pt is contained in an amount of 5 mol % or more, and the remainder is Co, wherein the target includes a base metal (A) and, within the base metal (A), a Co—Pt alloy phase (B) containing 40 to 76 mol % of Pt, and a metal or alloy phase (C), which is different from the phase (B) and is composed of Co or an alloy comprising Co as a main component. The present invention improves the leakage magnetic flux to provide a ferromagnetic material sputtering target that can perform stable discharge with a magnetron sputtering apparatus. | 08-22-2013 |
20130213803 | Fe-Pt-Based Sputtering Target with Dispersed C Grains - A sintered compact sputtering target in which a composition ratio based on atomicity is represented by a formula of (Fe | 08-22-2013 |
20130213802 | Sintered Compact Sputtering Target - A sintered compact sputtering target is provided and contains Co and Cr as metal components and includes oxides dispersed in the structure formed of the metal components. The structure of the sputtering target has a region (A) containing Co oxides dispersed in Co and a region (D) containing Cr oxides in a periphery of the region (A). In addition a method of producing the above referenced sintered compact sputtering target is provided and includes the steps of mixing a powder prepared by pulverizing a sintered compact containing Co oxide dispersed in Co, a Co powder, and a Cr power and pressure-sintering the resulting powder mixture to provide a sputtering target. | 08-22-2013 |
20130209825 | COPPER-COBALT-SILICON ALLOY FOR ELECTRODE MATERIAL - Disclosed is a copper-cobalt-silicon (Cu—Co—Si) alloy for electronic material with an improved balance among electro-conductivity, strength and bend formability, which includes 0.5 to 3.0% by mass of Co, 0.1 to 1.0% by mass of Si, and the balance of Cu and inevitable impurities, having a ratio of mass percentages of Co and Si (Co/Si) given as 3.5≦Co/Si≦5.0, having an average particle size of second phase particles, within the range of the particle size of 1 to 50 m seen in a cross-section taken in parallel with the direction of rolling, of 2 to 10 nm, and having an average distance between the adjacent second phase particles of 10 to 50 nm. | 08-15-2013 |
20130206593 | FERROMAGNETIC MATERIAL SPUTTERING TARGET - Provided is a ferromagnetic material sputtering target comprising a metal having a composition that Cr is contained in an amount of 20 mol % or less, Ru is contained in an amount of 0.5 mol % or more and 30 mol % or less, and the remainder is Co, wherein the target has a structure including a base metal (A) and, within the base metal (A), a Co—Ru alloy phase (B) containing 35 mol % or more of Ru. The present invention provides a ferromagnetic material sputtering target that can improve leakage magnetic flux to allow stable discharge with a magnetron sputtering apparatus. | 08-15-2013 |
20130206592 | Ferromagnetic Sputtering Target - Provided is a ferromagnetic sputtering target having a metal composition comprising 20 mol % or less of Cr, 5 mol % or more of Pt, and the balance of Co, wherein the target includes a metal base (A) and two different phases (B) and (C) in the metal base (A), the phase (B) being a Co—Ru alloy phase containing 30 mol % or more of Ru, and the phase (C) being a metal or alloy phase primarily composed of Co or a Co alloy. The present invention improves the leakage magnetic flux to provide a ferromagnetic sputtering target that can perform stable discharge with a magnetron sputtering device. | 08-15-2013 |
20130206591 | Sputtering Target for Magnetic Recording Film and Method for Producing Same - Provided is a sputtering target for a magnetic recording film containing SiO | 08-15-2013 |
20130189538 | METHOD OF MANUFACTURING COPPER FOIL FOR PRINTED WIRING BOARD, AND COPPER FOIL PRINTED WIRING BOARD - A method of manufacturing a copper foil for a printed wiring board, characterized in that a roughened layer of roughening copper grains is formed on at least one surface of the copper foil by using an electrolytic bath of sulfuric acid and copper sulfate, and the electrolytic bath contains tungsten ions and/or arsenic ions and further contains an alkyl sulfate-based anionic surfactant. The object of the present invention is to provide a method of manufacturing a copper foil for a printed wiring board, wherein in particular a roughened layer on the copper foil can be improved to enhance the adhesive strength between the copper foil and a resin substrate without deteriorating other properties of the copper foil. | 07-25-2013 |
20130186753 | Titanium Target for Sputtering - Provided is a titanium target for sputtering having a Shore hardness Hs of 20 or more and a basal plane orientation ratio of 70% or less. In the titanium target for sputtering, the purity of titanium is 99.995 mass % or more, excluding gas components. It is an object of the present invention to provide a high-quality titanium target for sputtering, in which impurities are reduced, and which can prevent occurrence of cracking or breaking in high-power sputtering (high-rate sputtering), stabilize sputtering characteristics, and effectively suppress occurrence of particles during formation of a film. | 07-25-2013 |
20130180630 | Cu-Co-Si-BASED ALLOY FOR ELECTRONIC MATERIAL AND METHOD OF MANUFACTURING THE SAME - A Cu—Co—Si-based alloy that has even mechanical properties and that is provided with favorable mechanical and electrical properties as a copper alloy for an electronic material is provided. The copper alloy for an electronic material comprises 0.5% by mass to 3.0% by mass of Co, 0.1% by mass to 1.0% by mass of Si, and the balance Cu with inevitable impurities. An average grain size is in the range of 3 μm to 15 μm and an average difference between a maximum grain size and a minimum grain size in every observation field of 0.05 mm | 07-18-2013 |
20130175470 | Cathode Active Material For Lithium Ion Battery And Method For Producing The Same - An object of the present invention is to reduce the time required for the calcination of a lithium metal salt complex to thereby provide a high-quality cathode active material for a lithium ion battery at low cost. The method for producing a cathode active material for a lithium ion battery comprises the steps of: | 07-11-2013 |
20130175167 | FERROMAGNETIC SPUTTERING TARGET AND METHOD FOR MANUFACTURING SAME - Provided is a ferromagnetic sputtering target having a composition containing 20 mol % or less of Cr, 5 to 30 mol % of Pt, 5 to 15 mol % of SiO | 07-11-2013 |
20130168241 | Cu-In-Ga-Se QUATERNARY ALLOY SPUTTERING TARGET - A quaternary alloy sputtering target composed of copper (Cu), indium (In), gallium (Ga) and selenium (Se), wherein a composition ratio of the respective elements is represented by a formula of Cu | 07-04-2013 |
20130168240 | Fe-Pt-Based Ferromagnetic Material Sputtering Target - An Fe—Pt-based ferromagnetic material sputtering target comprising a metal and a metal oxide, wherein the metal has a composition in which Pt is contained in an amount of 5 mol % or more and 60 mol % or less and the remainder is Fe. An object of the present invention is to provide a ferromagnetic material sputtering target, which enables to form a magnetic recording layer composed of a magnetic phase such as an Fe—Pt alloy, and a non-magnetic phase to isolate the magnetic phase, and in which a metal oxide is used as one of the materials for the non-magnetic phase. Provided is a ferromagnetic material sputtering target wherein an inadvertent release of the metal oxide during sputtering and particle generation due to abnormal electrical discharge starting at a void inherently included in the target are suppressed, the adherence between the metal oxide and the matrix alloy is enhanced, and its density is increased. | 07-04-2013 |
20130153414 | Indium Target And Method For Manufacturing Same - Provided are an indium target capable of achieving a high deposition rate while suppressing the occurrence of arcing, and a method for manufacturing the indium target. In the process of solidification at the time of melting and casting an indium ingot, ultrasonic vibration is applied to molten indium liquid which is at least in a state immediately before solidification, and thereby, coarsening of the grain size is suppressed. Thus, an indium target is provided An indium target in which an overall average grain size is 10 mm or less; for the grains observed from a cross-section parallel to a thickness direction, a ratio of an average grain size in a direction parallel to the thickness direction with respect to an average grain size in a direction perpendicular to the thickness direction is 0.7 to 1.1; and pores with a pore size of 50 μm or greater exists at a density of 1 pore/cm | 06-20-2013 |
20130143121 | Positive Electrode Active Material For Lithium-Ion Battery, A Positive Electrode For Lithium-Ion Battery, And Lithium-Ion Battery - The present invention provides a positive electrode active material for lithium ion batteries having excellent battery property. | 06-06-2013 |
20130143069 | Laminated Structure And Method For Producing The Same - Provided by the present invention is a laminated structure with good use efficiency, in which diffusion of tin from an indium-tin solder material to an indium target is favorably suppressed, and a method for producing the same. The laminated structure has a backing plate, an indium-tin solder material, and an indium target laminated in this order, and the concentration of tin in the 2.5 to 3.0 mm thickness range of the indium target from the indium-tin solder material side surface is 5 wtppm or less. | 06-06-2013 |
20130139648 | Recovery Method for High Purity Platinum - A high purity platinum recovery method including the steps of dissolving a platinum alloy containing ruthenium in aqua regia and eliminating residue, thereafter causing acid with platinum dissolved therein and an ammonium chloride solution to react so as to deposit chloroplatinic ammonium salt, and reducing the chloroplatinic ammonium salt to obtain a platinum sponge. The method is characterized in that acid with platinum dissolved therein and the ammonium chloride solution are caused to react at a temperature of 40° C. or higher. Provided is a method which enables recovery, at a high yield, of high purity platinum which can be reused in a platinum and a platinum-containing target as a result of efficiently eliminating ruthenium, cobalt, chromium, copper, iron, nickel, silicon and the like which become included in a spent platinum alloy sputtering target, particularly a magnetic material target, and in scraps such as mill ends, sawdust, and surface grinding scraps generated during the production process of such a target. | 06-06-2013 |
20130134038 | Ferromagnetic Material Sputtering Target - A ferromagnetic material sputtering target which is a sintered compact sputtering target made of a metal having Co as its main component, and nonmetallic inorganic material particles, wherein a plurality of metal phases having different saturated magnetization exist, and the nonmetallic inorganic material particles are dispersed in the respective metal phases. By increasing the pass-through flux of the sputtering target, it is possible to obtain a stable discharge. Moreover, it is also possible to obtain a ferromagnetic material sputtering target capable of obtaining a stable discharge in a magnetron sputtering device and which has a low generation of particles during sputtering. Thus, this invention aims to provide a ferromagnetic material sputtering target for use in the deposition of a magnetic thin film of a magnetic recording medium, and particularly of a magnetic recording layer of a hard disk adopting the perpendicular magnetic recording system. | 05-30-2013 |
20130112556 | SPUTTERING TARGET AND/OR COIL, AND PROCESS FOR PRODUCING SAME - Provided is a sputtering target and/or a coil disposed at the periphery of a plasma-generating region for confining plasma. The target and/or the coil has a surface to be eroded having a hydrogen content of 500 μL/cm | 05-09-2013 |
20130112555 | Sputtering Target of Ferromagnetic Material with Low Generation of Particles - Provided is a sputtering target of ferromagnetic material comprising a metal having a composition containing 20 mol % or less of Cr, and Co as the remainder; wherein the target structure includes a phase (A) which is a basis metal, and metal phases (B) having a component composition different from the peripheral texture within the phase (A), the area ratio occupied by oxides within 1 μm from the most outer periphery of metal phases (B) is 80% or less, and the average grain size of the metal phases (B) is 10 μm or more and 150 μm or less. Provided is a sputtering target of ferromagnetic material capable of inhibiting the generation of particles during sputtering, and improving the pass-through flux to achieve a stable electrical discharge with a magnetron sputtering device. | 05-09-2013 |
20130105311 | Indium Target And Method For Producing The Same | 05-02-2013 |
20130098760 | SPUTTERING TARGET FOR MAGNETIC RECORDING FILM, AND PROCESS FOR PRODUCING SAME - Provided is a sputtering target containing SiO | 04-25-2013 |
20130098759 | Tantalum Sputtering Target - Provided is a tantalum sputtering target, in which 30 mass ppm or more and 100 mass ppm or less of oxygen is contained as an essential component, and of which purity excluding oxygen and gas components is 99.998% or higher. Additionally provided is a tantalum sputtering target, wherein an average crystal grain size is 120 μm or less and variation in the crystal grain size is ±20% m or less. Thereby obtained is a high-purity tantalum sputtering target having a uniform and fine structure and enabling plasma stabilization and achievement of superior film evenness (uniformity). | 04-25-2013 |
20130098511 | CU-SI-CO ALLOY FOR ELECTRONIC MATERIALS, AND METHOD FOR PRODUCING SAME - A Cu—Co—Si alloy having an improved balance between electrical conductivity and strength is provided. Disclosed is a copper alloy for electronic materials, which contains 0.5% to 4.0% by mass of Co and 0.1% to 1.2% by mass of Si, with the balance being Cu and unavoidable impurities, and in which the mass % ratio of Co and Si (Co/Si) is 3.5≦Co/Si≦5.5, an area ratio of discontinuous precipitation (DP) cells is 5% or less, and an average value of a maximum width of discontinuous precipitation (DP) cells is 2 μm or less. | 04-25-2013 |
20130092589 | MELT CONTAINER - An object of the invention is to provide a container for holding a melt of a metal and/or a melt of a metal salt, in which a melt container allows keeping a small amount of heat radiation of the melt, suppressing penetration of the melt and development of breakage or cracking to the minimum, holding the melt suitably, and also preventing the melt from impurity contamination. The melt container of the invention is a container for holding the melt of the metal and/or the melt of the metal salt, and has, sequentially from inside of the container, a first layer constituted of a refractory having an apparent porosity of 12% or less, a second layer constituted of a refractory having a thermal conductivity (at 800° C.) of 4 W/m·K or less, and a third layer constituted of a refractory having a higher thermal conductivity than thermal conductivity of the second layer. | 04-18-2013 |
20130092534 | Tantalum Sputtering Target - Provided is a tantalum sputtering target, in which 1 mass ppm or more and 50 mass ppm or less of boron is contained as an essential component, and of which the purity excluding boron and gas components is 99.998% or higher. Thereby obtained is a high-purity tantalum sputtering target having a uniform and fine structure and enabling plasma stabilization and achievement of superior film evenness (uniformity). | 04-18-2013 |
20130092297 | Cu-Co-Si System Alloy Sheet and Method for Manufacturing Same - The present invention provides a Cu—Co—Si system alloy sheet, being suitable for use in a variety of electronic device components, in particular, having excellent uniform adhesive property for plate. | 04-18-2013 |
20130087454 | Magnetic Material Sputtering Target Provided with Groove in Rear Face of Target - Provided is a disk-shaped magnetic material sputtering target having a thickness of 1 to 10 mm, wherein the magnetic material sputtering target includes, on a rear surface thereof, at least one circular groove having a width of 5 to 20 mm and a depth of 0.1 to 3.0 mm centered around a center of the disk-shaped target, spacing of the respective grooves is 10 mm or more, and a non-magnetic material having a thermal conductivity of 20 W/m·K or more is embedded in the groove. The pass through flux density is increased in order to eliminate the defects that occur in the target of a magnetic material, the sputtering efficiency is improved by increasing the spread of plasma and improving the deposition rate, and the usage efficiency of the magnetic material target is additionally improved by inhibiting local erosion and causing the erosion on the target surface to be uniform. | 04-11-2013 |
20130087255 | Cu-Co-Si-BASED COPPER ALLOY FOR ELECTRONIC MATERIALS, AND METHOD OF MANUFACTURING SAME - Disclosed is a Cu—Co—Si-based copper alloy for electronic materials, which is capable of achieving high levels of strength, electrical conductivity, and also anti-setting property; and contains 0.5 to 3.0% by mass of Co, 0.1 to 1.0% by mass of Si, and the balance of Cu and inevitable impurities; wherein out of second phase particles precipitated in the matrix a number density of the particles having particle size of 5 nm or larger and 50 nm or smaller is 1×10 | 04-11-2013 |
20130071676 | COPPER FOIL COMPOSITE - A copper foil composite comprising a copper foil and a resin layer laminated thereon, wherein equation 1:(f | 03-21-2013 |
20130071652 | LAMINATE FOR FLEXIBLE WIRING - A laminate for flexible wiring in which copper plating is entirely or locally applied on a copper foil that is cladded on an insulating resin substrate, characterized in that a ratio A=[(200)/{(111)+(200)+(220)+(311)}]×100, i.e. a ratio of an area intensity of a peak in the X-ray diffraction of the copper plating surface is more than 90. The present invention can provide the laminate for flexible wiring in which copper plating is entirely or locally applied on a copper foil cladded on an insulating resin substrate, characterized in having particularly high bendability and enables the formation of fine patterns, namely, high dense patterns of wiring. | 03-21-2013 |
20130058846 | METHOD FOR PROCESSING ACIDIC SOLUTION THAT CONTAINS IODIDE IONS AND IRON IONS - Provided is a method for separating and recovering iodine ingredients from acid solution containing iodide ions and iron (II) ions and for efficiently producing iron (III) ions. Said method is for treating acid solution containing the iodide ions and the iron (II) ions. Said method comprises a step of oxidizing the iron (II) ions in said solution into iron (III) ions with iron-oxidizing microorganisms, the step being performed in the presence of activated carbon. | 03-07-2013 |
20130043428 | Method For Producing Positive Electrode Active Material For Lithium Ion Batteries And Positive Electrode Active Material For Lithium Ion Batteries - The present invention provides a method for producing a high quality positive electrode active material for lithium ion batteries at low cost and at excellent production efficiency. The method for producing a positive electrode active material for lithium ion batteries includes a step of firing a powder of lithium-containing carbonate that is a precursor for positive electrode active material for lithium ion batteries in a rotary kiln. In the step, a temperature at a powder feed part inside of the rotary kiln is kept at 500° C. or more. | 02-21-2013 |
20130037408 | Indium Target And Manufacturing Method Thereof - The present invention provides an indium target and manufacturing method thereof, where deposition rate is high, initial discharge voltage is low, and deposition rate and discharge voltage, from the start of sputtering to the end of sputtering, are stable. In the indium target, an aspect ratio (length of longer direction/length of shorter direction) of crystal particle, observed from cross-section direction of the target, is 2.0 or less. | 02-14-2013 |
20130032477 | Ni ALLOY SPUTTERING TARGET, Ni ALLOY THIN FILM AND Ni SILICIDE FILM - Provided is a Ni alloy sputtering target containing Pt in an amount of 5 to 30 at %, and one or more components selected from V, Al, Cr, Ti, Mo, and Si in a total amount of 1 to 5 at %, wherein the remainder is Ni and unavoidable impurities. The present invention is able to increase the low pass-through flux (PTF), which is a drawback of a Ni—Pt alloy having high magnetic permeability, increase the erosion area of the target which tends to be small as a result of the magnetic field lines being locally concentrated on the surface of the target during sputtering, and inhibit the difference between the portion where erosion is selectively advanced and the portion where erosion does not advance as much as the erosion progresses. | 02-07-2013 |
20130029278 | METHOD FOR SYNTHESIZING GROUP II-VI COMPOUND SEMICONDUCTOR POLYCRYSTALS - Provided is a method for synthesizing group II-VI compound semiconductor polycrystals in which synthesis can be accomplished without the use of a quart ampoule as the polycrystal synthesis vessel, and as a result it is possible to use a larger vessel without reducing yield, and costs can thereby be reduced. Two or more starting elements are introduced to a semi-airtight pBN inner vessel ( | 01-31-2013 |
20130028786 | Low alpha-Dose Tin or Tin Alloy, and Method for Producing Same - Disclosed is tin characterized in that a sample of the tin after melting and casting has an α dose of less than 0.0005 cph/cm | 01-31-2013 |
20130019997 | CU-CO-SI ALLOY MATERIAL - A copper alloy material suitable for materials for electronic and electrical equipments such as movable connectors having excellent bending workability and being able to show high electrical conductivity was achieved by a Cu—Co—Si alloy material containing 1.5 to 2.5 wt % of Co and 0.3 to 0.7 wt % of Si, having a Co/Si element ratio of 3.5 to 5.0, containing 3,000 to 150,000 second phase particles per mm | 01-24-2013 |
20130011734 | COPPER FOIL FOR NEGATIVE ELECTRODE CURRENT COLLECTOR OF SECONDARY BATTERY - Provided is a copper foil for a negative electrode current collector of secondary battery, wherein: roughening treatment is performed to both front and rear surfaces of a rolled copper alloy foil; an average surface roughness Ra of both the front and rear surfaces based on laser microscope measurement is 0.04 to 0.20 μm; and the ratio of surface area factor is within a range of 1.0<(C)/(C′)<1.1, when a three-dimensional surface area upon measuring the roughened surfaces with a laser microscope is (A), a two-dimensional area as a projected area upon measuring the three-dimensional surface area is (B), and a calculated value of (A)/(B) is expressed in (C), and when a three-dimensional surface area upon measuring the surfaces of a non-roughened rolled copper or copper alloy foil with a laser microscope is (A′), a two-dimensional area as a projected area upon measuring the three-dimensional surface area is (B′), and a calculated value of (A′)/(B′) is expressed in (C′). This invention aims to provide a copper foil for a negative electrode current collector of a secondary battery in which the adhesiveness of the secondary battery active material is superior, and which can reduce the variation in the area weight of the secondary battery active material, and has superior weather resistance and thermal resistance. | 01-10-2013 |
20130011690 | Copper Foil for Printed Circuit - Disclosed is a copper foil for printed circuits prepared by forming a primary particle layer of copper on a surface of a copper foil, and then forming a secondary particle layer based on ternary alloy composed of copper, cobalt and nickel on the primary particle layer; in which the average particle size of the primary particle layer is 0.25 to 0.45 μm, and the average particle size of the secondary particles layer based on ternary alloy composed of copper, cobalt and nickel is 0.05 to 0.25 μm. Provided is a copper foil for printed circuits, in which powder fall from the copper foil can be reduced and the peeling strength and heat resistance can be improved by forming a primary particle layer of copper on a surface of a copper foil, and then forming a secondary particle layer based on copper-cobalt-nickel alloy plating on the primary particle layer. | 01-10-2013 |
20130004849 | Positive Electrode Active Material For Lithium-Ion Battery, Positive Electrode For Lithium-Ion Battery, And Lithium-Ion Battery - The present invention provides a positive electrode active material for lithium ion battery having good rate characteristics. The positive electrode active material for lithium ion battery has a layer structure expressed by a composition formula: Li | 01-03-2013 |
20130001463 | Positive Electrode Active Substance For Lithium Ion Batteries, Positive Electrode For Lithium Ion Batteries, And Lithium Ion Battery - The present invention provides a positive electrode active material for lithium ion battery which has a high capacity and good rate characteristics can be provided. The positive electrode active material for lithium ion battery has a layer structure represented by the compositional formula: Li | 01-03-2013 |
20130001186 | METHOD OF FORMING CIRCUIT ON FLEXIBLE LAMINATE SUBSTRATE - Disclosed is a method of forming a circuit on a flexible laminate substrate. When forming a circuit using an adhesiveless flexible laminate which includes a polyimide film as the flexible laminate substrate in which at least one surface thereof is subject to plasma treatment, a tie-coat layer A formed on the polyimide film, a metal conductor layer B formed on the tie-coat layer, and a layer C which has the same components as the tie-coat layer that was formed on the metal conductor layer, the following method is used. The photoresist is coated on the layer C which has the same components as the tie-coat layer that was formed on the metal conductor layer, the photoresist is exposed and developed, the layer C other than the circuit forming parts thereof is selectively removed in advance via pre-etching, the conductor layer B is thereafter removed by supplemental etching with leaving the circuit portion, and the photoresist of the circuit portion is further removed so as to form the circuit. By forming a tie-coat layer or a metal or alloy that is equivalent to the tie-coat layer on the metal conductor layer of the adhesiveless flexible laminate, simultaneously achieved are the inhibition of side etching, which interferes with the achievement of finer pitches of circuit wiring, and the improvement of linearity of the wiring. | 01-03-2013 |
20120326102 | Positive Electrode Active Material For Lithium Ion Battery, Positive Electrode For Lithium Ion Battery, And Lithium Ion Battery - The present invention provides a positive electrode active material for lithium ion battery which attains a lithium ion battery having high safety. The positive electrode active material for lithium ion battery has a layer structure represented by the compositional formula: Li | 12-27-2012 |
20120326101 | Positive Electrode Active Material For Lithium-Ion Batteries, Positive Electrode For Lithium-Ion Batteries,Lithium-Ion Battery - The present invention provides a positive electrode active material for lithium ion battery which attains a lithium ion battery having high safety. The positive electrode active material for lithium ion battery which has a layer structure represented by the compositional formula: Li | 12-27-2012 |
20120326099 | Positive Electrode Active Material For Lithium Ion Battery, Positive Electrode For Lithium Ion Battery, And Lithium Ion Battery - The present invention provides a positive electrode active material for lithium ion battery which attains a lithium ion battery having high safety. The positive electrode active material has a layer structure for a lithium ion battery, in which the positive electrode active material is represented by the following composition formula: | 12-27-2012 |
20120326098 | Positive Electrode Active Material For Lithium-Ion Batteries, Positive Electrode For Lithium-Ion Batteries, And Lithium-Ion Battery - The present invention provides a positive electrode active material for lithium ion battery which attains a lithium ion battery having high safety. The positive electrode active material for lithium ion battery has a layer structure represented by the compositional formula: Li | 12-27-2012 |
20120326080 | Positive Electrode Active Substance For Lithium Ion Batteries, Positive Electrode For Lithium Ion Batteries, And Lithium Ion Battery - The present invention provides a positive electrode active material for lithium ion battery which has a high capacity and good rate characteristics can be provided. The positive electrode active material for lithium ion battery has a layer structure represented by the compositional formula: Li | 12-27-2012 |
20120321956 | Positive-Electrode Active Material For Lithium Ion Battery, Positive Electrode For Lithium Ion Battery, And Lithium Ion Battery - The present invention provides a positive electrode active material for a lithium ion battery having good battery performance can be provided. The positive electrode active material for a lithium ion battery is represented by; | 12-20-2012 |
20120319057 | Sintered Compact, Amorphous Film and Crystalline Film of Composite Oxide, and Process for Producing the Films - An amorphous film comprising indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen, is provided. The film can be crystallized by annealing at 260° C. or lower in which resistivity of the film will be 0.4 mΩcm or less. In this manner, an ITO thin film for use as a display electrode or the like in a flat panel display can be made into an amorphous ITO film by way of sputter deposition without heating the substrate or adding water during deposition. This ITO film can be crystallized by annealing at a low temperature and will have low resistivity. Methods of producing such films and sintered compacts are provided. | 12-20-2012 |
20120319040 | Positive Electrode Active Substance For Lithium Ion Batteries, Positive Electrode For Lithium Ion Batteries, And Lithium Ion Battery - The present invention provides a positive electrode active material for lithium ion battery which has a high capacity and good rate characteristics can be provided. The positive electrode active material for lithium ion battery has a layer structure represented by the compositional formula: Li | 12-20-2012 |
20120319039 | Positive Electrode Active Material For Lithium Ion Battery, Positive Electrode For Lithium Ion Battery, And Lithium Ion Battery - The present invention provides a positive electrode active material for lithium ion battery which attains a lithium ion battery having high safety. The positive electrode active material has a layer structure for a lithium ion battery, in which the positive electrode active material is represented by the following composition formula: | 12-20-2012 |
20120319037 | Method For Producing Positive Electrode Active Material For Lithium Ion Battery And Positive Electrode Active Material For Lithium Ion Battery - The present invention provides a method for producing a positive electrode active material for lithium ion battery, having excellent tap density, at excellent production efficiency, and a positive electrode active material for lithium ion battery. The method for producing a positive electrode active material for lithium ion battery including a step of conducting a main firing after increasing mass percent of all metals in lithium-containing carbonate by 1% to 105% compared to the mass percent of all metals before a preliminary firing, by conducting the step of a preliminary firing to the lithium-containing carbonate, which is a precursor for positive electrode active material for lithium ion battery, with a rotary kiln. | 12-20-2012 |
20120319036 | Positive Electrode Active Material For Lithium Ion Battery, Positive Electrode For Lithium Ion Battery, And Lithium Ion Battery - The present invention provides a positive electrode active material for a lithium ion battery with excellent battery characteristics can be provided. The positive electrode active material for a lithium ion battery is represented by the following composition formula: | 12-20-2012 |
20120318669 | SPUTTERING TARGET-BACKING PLATE ASSEMBLY - Provided is a sputtering target-backing plate assembly where a raw material powder prepared so as to have the composition of a magnetic material sputtering target is filled in a die together with a backing plate and hot-pressed, thereby being bonded to the backing plate simultaneously with sintering of the magnetic material target powder. | 12-20-2012 |
20120318668 | TANTALUM COIL FOR SPUTTERING AND METHOD FOR PROCESSING THE COIL - Provided is a tantalum coil for sputtering disposed between a substrate and a sputtering target, wherein the tantalum coil has irregularities so that the surface roughness Rz of the tantalum coil is 150 μm or more and the number of threads is 15 to 30 TPI (Threads per inch) in a transverse direction and 10 to 30 TPI in a vertical direction. An object of the present invention is to take measures to prevent the sputtered grains accumulated on the surface of a tantalum coil from flaking so as to prevent the generation of particles and arcing that is caused by the flaking of the sputtered grains accumulated on the surface of the coil disposed between a substrate and a sputtering target, and the adhesion of the scattered flakes onto the substrate surface; and thereby to provide a technology of improving the quality and productivity of electronic components and stably providing semiconductor elements and devices. | 12-20-2012 |
20120318568 | ELECTRONIC CIRCUIT, METHOD FOR FORMING SAME, AND COPPER CLAD LAMINATE FOR FORMING ELECTRONIC CIRCUIT - Provided is an electronic circuit as a laminated body configured from a layer (A) which is made of a copper or copper alloy foil formed on one surface or both surfaces of a resin substrate, a copper or copper alloy plated layer (B) formed on a part or whole surface of the (A) layer, a plated layer (C) formed on a part or whole surface of the (B) layer and having a slower etching rate than that of copper relative to a copper etching solution, and a copper or copper alloy plated layer (D) formed on the layer (C) and which has a thickness of 0.05 μm or more and less than 1 μm, and which is made of a copper circuit formed by etching and removing a part of the laminated portion of the (A) layer, the (B) layer, the (C) layer and the (D) layer up to the resin substrate surface. It is thereby possible to form a circuit having a uniform circuit width, improve the etching properties in pattern etching, and prevent the occurrence of short-circuits and defects in the circuit width. | 12-20-2012 |
20120292562 | Positive Electrode Active Material For Lithium Ion Battery, Positive Electrode For Lithium Ion Battery, And Lithium Ion Battery - The present invention provides a positive electrode active material for a lithium ion battery with excellent battery characteristics can be provided. The positive electrode active material for a lithium ion battery is represented by the following composition formula: | 11-22-2012 |
20120286219 | SPUTTERING TARGET, SEMICONDUCTING COMPOUND FILM, SOLAR CELL COMPRISING SEMICONDUCTING COMPOUND FILM, AND METHOD OF PRODUCING SEMICONDUCTING COMPOUND FILM - The present invention provides a sputtering target which comprises an alkali metal, a Ib group element, a IIIb group element, and a VIb group element, and has a chalcopyrite crystal structure. Provided is a sputtering target comprising Ib-IIIb-VIb group elements and having a chalcopyrite crystal structure, which is suitable for producing, via a single sputtering process, a light-absorbing layer comprising the Ib-IIIb-VIb group elements and having the chalcopyrite crystal structure. | 11-15-2012 |
20120279857 | Sb-Te-Based Alloy Sintered Compact Sputtering Target - Provided is an Sb—Te-based alloy sintered compact sputtering target having Sb and Te as its main component and which contains 0.1 to 30 at % of carbon or boron and comprises a uniform mixed structure of Sb—Te-based alloy particles and fine carbon (C) or boron (B) particles, wherein the average grain size of the Sb—Te-based alloy particles is 3 μm or less and the standard deviation thereof is less than 1.00, the average grain size of C or B is 0.5 μm or less and the standard deviation thereof is less than 0.20, and, when the average grain size of the Sb—Te-based alloy particles is X and the average grain size of carbon or boron is Y, Y/X is within the range of 0.1 to 0.5. The present invention aims to improve the structure of the Sb—Te-based alloy sputtering target, inhibit the generation of cracks in the sintered target, and prevent the generation of arcing in the sputtering process. | 11-08-2012 |
20120276412 | Surface-Treated Copper Foil - Provided is a surface-treated copper foil, wherein a plated layer essentially consisting of cobalt and nickel, in which a total amount of cobalt and nickel is 75 μg/dm | 11-01-2012 |
20120273348 | Indium Target And Manufacturing Method Thereof - The present invention provides a novel indium target and manufacturing method thereof, where an abnormal electrical discharge at sputtering and a generation of particles in a produced film can be inhibited excellently. The indium target contains not more than 1500 number/gram of inclusions having a particle size of 0.5 μm to 20 μm. | 11-01-2012 |
20120273347 | SPUTTERING TARGET WITH REDUCED PARTICLE GENERATION AND METHOD OF PRODUCING SAID TARGET - Provided is a sputtering target with reduced particle generation having a target surface in which intermetallic compounds, oxides, carbides, carbonitrides and other substances without ductility exist in a highly ductile matrix phase at a volume ratio of 1 to 50%, and in which the area ratio of defects on the target surface is 0.5% or less, as well as a method of producing such a sputtering target. Additionally provided are a sputtering target wherein the target surface, which contains large amounts of substances without ductility, is improved, and whereby the generation of nodules and particles during sputtering can be prevented or inhibited, and a surface finishing method thereof. | 11-01-2012 |
20120255859 | GADOLINIUM SPUTTERING TARGET AND PRODUCTION METHOD OF SAID TARGET - An assembly of a gadolinium target and a titanium backing plate, wherein the gadolinium target-titanium backing plate assembly has a solid-phase diffusion-bonded interface at a bonding interface between the gadolinium target and the titanium backing plate. An object of the present invention is to discover a backing plate that is suitable for the gadolinium sputtering target, explore the optimal bonding conditions, improve the deposition rate, stabilize the sputtering process, and prevent the occurrence of warpage and separation of the target material and the backing plate by increasing the bonding strength between the target material and the backing plate, as well as inhibit the generation of particles during sputtering. | 10-11-2012 |
20120251426 | Polycrystalline Silicon For Solar Cell And Preparation Method Thereof - The present invention provides a process for preparing a polycrystalline silicon having the surface layer in which the areas having a short carrier lifetime due to Fe has been substantially eliminated. A preparation method of polycrystalline silicon comprising preparing a mold evenly applied with a mold release agent produced by mixing a binder and a solvent with a silicon nitride powder and then solidifying a molten silicon in said mold, wherein x≦5.0, 20≦y≦100 and x×y≦100 are satisfied given that x represents a concentration of Fe (atomic ppm) contained as impurity in the silicon nitride powder and y represents a thickness of the mold release agent (μm) applied to the mold. | 10-04-2012 |
20120244434 | Positive Electrode For Lithium Ion Battery, Method For Producing Said Positive Electrode, And Lithium Ion Battery - The present invention provides a positive electrode for lithium ion battery reducing a contact resistance of a battery and achieving an excellent output property. The positive electrode for lithium ion battery comprising a mixed layer comprising:
| 09-27-2012 |
20120241317 | Sputtering Target Comprising Oxide Phase Dispersed in Co or Co Alloy Phase, Magnetic Thin Film Made of Co or Co Alloy Phase and Oxide Phase, and Magnetic Recording Medium Using the Said Thin Film - A sputtering target comprising an oxide phase is dispersed in Co or a Co alloy phase, wherein the sputtering target is configured from a metal matrix phase containing Co, and a phase containing SiO | 09-27-2012 |
20120241316 | SPUTTERING TARGET OF MAGNETIC MATERIAL - A magnetic sputtering target which contains B and is obtained by a melting and casting method, wherein the B content is 10 at % or more and 50 at % or less, and the remainder is one or more elements selected from Co, Fe, and Ni. Based on the method of the present invention, the sputtering target, in which gaseous impurities are few, there are no cracks and fractures, and segregation of its main constituent elements is minimal, is obtained. Consequently, when sputtered with a magnetron sputtering device comprising a DC power supply, this sputtering target yields a significant effect of being able to inhibit the generation of particles during sputtering, and improve the production yield upon forming thin films. | 09-27-2012 |
20120234138 | METHOD OF RECOVERING GOLD FROM DILUTE GOLD SOLUTION - Disclosed is a method of recovering gold from an aqueous solution having a gold concentration of 10 mg/L or lower, using a plurality of extraction apparatuses for bringing the aqueous solution into contact with an extraction agent, arranged to configure a multi-stage extraction process, the method allowing the aqueous solution to continuously flow from the first-stage extraction process to the next-stage extraction process, while recycling the extraction medium used in each stage twice or more times for the extraction process of the same stage, without back extraction and reduction. | 09-20-2012 |
20120231343 | Positive Electrode Active Material For A Lithium-Ion Battery, Positive Electrode For A Lithium-Ion Battery, Lithium-Ion Battery Using Same, And Precursor To A Positive Electrode Active Material For A Lithium-Ion Battery - The present invention provides a positive electrode active material for lithium ion batteries, which realizes a lithium ion battery that is, while satisfying fundamental characteristics of a battery (capacity, efficiency, load characteristics), low in the resistance and excellent in the lifetime characteristics. In the positive electrode active material for lithium ion batteries, the variation in the composition of transition metal that is a main component inside of particles of or between particles of the positive electrode active material, which is defined as a ratio of the absolute value of the difference between a composition ratio inside of the particles of or in a small area between the particles of the transition metal and a composition ratio in a bulk state to the composition ratio in a bulk state of the transition metal, is 5% or less. | 09-13-2012 |
20120231342 | Positive Electrode Active Material For Lithium-Ion Battery, Positive Electrode For Lithium-Ion Battery, And Lithium-Ion Battery - The present invention provides a positive electrode active material for lithium ion batteries having excellent rate performance. | 09-13-2012 |
20120228132 | SPUTTERING TARGET-BACKING PLATE ASSEMBLY, AND ITS PRODUCTION METHOD - A sputtering target-backing plate assembly obtained by bonding a target material of Mg to a backing plate of Cu—Cr alloy, wherein the target material and the backing plate are bonded via a layer of Ni or an alloy comprising Ni as a main component at the interface therebetween. An object of the present invention is to provide a sputtering target-backing plate assembly that is used when magnesium (Mg) is the sputtering target material, and to resolve problems inherent in magnesium (Mg) and problems related to the selection of a backing plate to be compatible with magnesium by improving the bonding strength between the target and the backing plate in order to improve the sputtering efficiency. | 09-13-2012 |
20120222519 | METHOD OF LEACHING COPPER AND GOLD FROM SULFIDE ORES - Disclosed is a method of leaching copper and gold from sulfide ores, which includes Process (1) of bringing a first aqueous acidic solution which contains chlorine ion, copper ion and iron ion, but no bromine ion, into contact with sulfide ores under supply of an oxidizing agent, so as to leach copper component contained in the sulfide ores; Process (2) of separating, by solid-liquid separation, a leaching reaction liquid obtained in Process (1), into a leaching residue and a leachate; and Process (3) of bringing a second aqueous acidic solution which contains chlorine ion, bromine ion, copper ion and iron ion, into contact with the leaching residue obtained in Process (2) under supply of an oxidizing agent, so as to leach gold contained in the leaching residue. | 09-06-2012 |
20120205242 | Cu-In-Ga-Se QUATERNARY ALLOY SPUTTERING TARGET - A quaternary alloy sputtering target made of copper (Cu), indium (In), gallium (Ga) and selenium (Se), wherein the Cu—In—Ga—Se sputtering target has a composition that is represented by a composition formula of CuIn | 08-16-2012 |
20120199796 | Sintered Compact of Indium Oxide System, and Transparent Conductive Film of Indium Oxide System - A sintered indium oxide comprising niobium as an additive, wherein the ratio of the number of niobium atoms relative to the total number of atoms of all metal elements contained in the sintered compact is within a range of 1 to 4%, the relative density is 98% or higher, and the bulk resistance is 0.9 mΩ·cm or less. Provided are a sintered compact of indium oxide system and a transparent conductive film of indium oxide system, which have characteristics of high transmittance in the short wavelength and long wavelength ranges since the carrier concentration is not too high even though the resistivity thereof is low. | 08-09-2012 |
20120196076 | Thin Film Comprising Titanium Oxide as Main Component and Sintered Compact Sputtering Target Comprising Titanium Oxide as Main Component - A thin film comprising titanium oxide as its main component includes titanium, oxygen and copper, content of Ti is 29.0 to 34.0 at % and content of Cu is 0.003 to 7.7 at % or less with remainder being oxygen and unavoidable impurities. A ratio of oxygen component to metal components, O/(2 Ti+0.5 Cu), is 0.96 or higher. The thin film has a high refractive index and low extinction coefficient. A sintered compact sputtering target suitable for producing the foregoing thin film is also provided and can be used to obtain a thin film with superior transmittance and low reflectance and which is effective as an interference film or protective film of an optical information recording medium, and to obtain a thin film that can be applied to a glass substrate; that is, a thin film that can be used as a heat ray reflective film, antireflection film, and interference filter. | 08-02-2012 |
20120192763 | Thin Film Comprising Titanium Oxide as Main Component and Sintered Compact Sputtering Target Comprising Titanium Oxide as Main Component - A thin film comprising titanium oxide as its main component includes titanium, oxygen and copper, content of Ti is 29.0 to 34.0 at % and content of Cu is 0.003 to 7.7 at % or less with remainder being oxygen and unavoidable impurities. A ratio of oxygen component to metal components, O/(2Ti+0.5Cu), is 0.96 or higher. The thin film has a high refractive index and low extinction coefficient. A sintered compact sputtering target suitable for producing the foregoing thin film is also provided and can be used to obtain a thin film with superior transmittance and low reflectance and which is effective as an interference film or protective film of an optical information recording medium, and to obtain a thin film that can be applied to a glass substrate; that is, a thin film that can be used as a heat ray reflective film, antireflection film, and interference filter. | 08-02-2012 |
20120187409 | Hybrid Silicon Wafer - A hybrid silicon wafer which is a silicon wafer having a structure wherein monocrystalline silicon is embedded in polycrystalline silicon that is prepared by the unidirectional solidification/melting method. The longitudinal plane of crystal grains of the polycrystalline portion prepared by the unidirectional solidification/melting method is used as the wafer plane, and the monocrystalline silicon is embedded so that the longitudinal direction of the crystal grains of the polycrystalline portion forms an angle of 120° to 150° relative to the cleaved surface of the monocrystalline silicon. Thus provided is a hybrid silicon wafer comprising the functions of both a polycrystalline silicon wafer and a monocrystalline wafer. | 07-26-2012 |
20120181536 | Hybrid Silicon Wafer - A hybrid silicon wafer which is a silicon wafer having a structure wherein the main plane orientation of polycrystalline silicon that is prepared by a unidirectional solidification/melting method is (311), and monocrystalline silicon is embedded in the polycrystalline silicon. The hybrid silicon wafer according to any one of claims | 07-19-2012 |
20120180600 | Method for Producing High-Purity Tungsten Powder - Provided is a method for producing a high-purity tungsten powder having a phosphorus content of less than 1 wtppm; wherein an ammonium tungstate solution containing 1 wtppm or more of phosphorus as an impurity in terms of the inclusion in tungsten is used as a starting material, this solution is neutralized with hydrochloric acid at a temperature of 50° C. or less to adjust the pH at 4 or more and less than 7 so as to precipitate ammonium paratungstate undecahydrate crystals, the resulting solution is heated to 70 to 90° C. and filtered in a high-temperature state so as to obtain ammonium paratungstate pentahydrate crystals, the obtained crystals are calcined so as to form a tungsten oxide, and the tungsten oxide is subject to hydrogen reduction so as to obtain a high-purity tungsten powder. Additionally provided is a method for producing a high-purity tungsten powder having a phosphorus content of 0.4 wtppm or less; wherein the ammonium tungstate solution is neutralized with hydrochloric acid to adjust the pH at 4 or more and 6 or less, and this solution is subject to the same procedure as described above so as to obtain a high-purity tungsten powder. Consequently, the phosphorus content can be efficiently reduced. | 07-19-2012 |
20120135266 | Copper Foil and Method for Producing Same - A copper foil comprising a plated layer containing nickel and zinc on a copper foil made of an electrolytic copper foil or a rolled copper foil, and a chromium plated layer on the plated layer containing nickel and zinc, wherein the zinc in the plated layer containing nickel and zinc is made of zinc oxide and metal zinc, and the ratio of metal zinc in the zinc oxide and metal zinc is 50% or less. This invention relates to a copper foil for a flexible printed board formed with a polyimide-based resin layer and in particular provides a copper foil having superior adhesive strength between the copper foil and the polyimide-based resin layer, having acid resistance and tin plating solution resistance, having high peel strength, comprising favorable etching properties and gloss level, and suitable for use in a flexible printed board capable of achieving fine patterning of wiring. | 05-31-2012 |
20120135160 | Method for Production of Non-Adhesive-Type Flexible Laminate - A non-adhesive-type flexible laminate including a polyimide film with at least one surface thereof being plasma-treated, a tie-coat layer formed on the plasma-treated surface, and a metal conductor layer fanned on the tie-coat layer is provided. A ratio (T/Rz) of a tie-coat layer thickness (T) to a 10-point mean roughness (Rz) of the plasma-treated polyimide film surface is made to be 2 or more. This improves initial adhesion, which is an indicator of adhesion strength of the non-adhesive-type flexible laminate (in particular, a two-layered, flexible laminate), and also increases adhesion of the laminate after heat aging (i.e., after being allowed to stand for 168 hours at 150° C. for 168 hours in the atmosphere). A method of manufacturing the laminate is also provided. | 05-31-2012 |
20120118734 | Ferromagnetic Material Sputtering Target - A ferromagnetic material sputtering target made of metal having a composition containing 20 mol % or less of Cr, and Co as the remainder thereof, wherein the structure of the target includes a metallic substrate (A), and, in the metallic substrate (A), a spherical phase (B) containing 90 wt % or more of Co in which the difference between the longest diameter and the shortest diameter is 0 to 50%. Provided is a ferromagnetic material sputtering target capable of improving the leakage magnetic flux to obtain a stable electrical discharge with a magnetron sputtering device. | 05-17-2012 |
20120107637 | Copper Foil for Semiconductor Package Substrate and Substrate for Semiconductor Package - A copper foil for a semiconductor package substrate comprising a chromate treatment layer or a coating layer made of zinc or zinc oxide and chromium oxide formed on a roughened surface of a copper foil to serve as an adherend surface with resin, and a silane coupling agent layer. With this copper foil for a semiconductor package substrate, the amount of Cr in the chromate coating layer is 25 to 150 μg/dm | 05-03-2012 |
20120104502 | METHOD OF PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE - Disclosed is a method of producing a semiconductor device, able to form a source/drain of a Schottky junction (FET) with simple steps and able to improve the device characteristics. A gate is formed on an element region defined in a silicon substrate layer by element isolation regions (first step), the silicon substrate is etched by self-alignment using the gate and the element isolation regions as masks (second step), and an insulating film is formed on the side surfaces of the gate (third step). Then, a metal film acting as the source/drain is selectively formed on the etching region of the silicon substrate by electroless plating (fourth step). | 05-03-2012 |
20120103804 | Oxide Sintered Compact, Its Production Method, and Raw Material Powder for Producing Oxide Sintered Compact - An oxide sintered compact made of indium (In), gallium (Ga), zinc (Zn) and oxygen (O) and represented by a formula of InxGayZnzOa [wherein x/(x+y) is 0.2 to 0.8, z/(x+y+z) is 0.1 to 0.5, and a=(3/2)x+(3/2)y+z], wherein the concentration of volatile impurities contained in the oxide sintered compact is 20 ppm or less. Provided is technology for application to the production of an IGZO target capable of achieving high densification and low bulk resistance of the sputtering target, preventing swelling and cracks of the target during the production process, minimizing the generation of nodules, inhibiting abnormal discharge, and enabling DC sputtering. | 05-03-2012 |
20120103229 | AQUEOUS SOLUTION CONTAINING DIVALENT IRON IONS - An object of the present invention is to provide an aqueous solution containing divalent iron ions having improved storage stability such that oxidation over time of divalent iron ions in the aqueous solution containing divalent iron ions to trivalent iron ions is suppressed and occurrence of the precipitation of iron (III) hydroxide is prevented for long periods. The present invention relates to an aqueous solution containing divalent iron ions having improved storage stability characterized in that it comprises divalent iron ions and a hydroxylamine salt as a reducing agent and has a pH of 3.0 or lower. The pH is preferably 2.2 or lower and more preferably 1.2 or lower. | 05-03-2012 |
20120098131 | Nickel Silicide Film - A nickel alloy sputtering target and a nickel silicide film formed with such a target are provided and enable the formation of a thermally stable silicide (NiSi) film, scarcely causing the aggregation of films or excessive formation of silicides, having low generation of particles upon forming the sputtered film, having favorable uniformity and superior plastic workability to the target, and which is particularly effective for the manufacture of a gate electrode material (thin film). The nickel alloy sputtering target contains 22 to 46 wt % of platinum and 5 to 100 wtppm of one or more components selected from iridium, palladium, and ruthenium, and remainder is nickel and inevitable impurities. | 04-26-2012 |
20120097535 | Sputtering Target of Ferromagnetic Material with Low Generation of Particles - A ferromagnetic sputtering target comprising metal having a composition containing 20 mol % or less of Cr, and Co as the remainder; wherein the target structure includes a basis metal (A), and flat phases (B), containing 90 wt % or more of Co, within the basis metal (A), the average grain size of the phases (B) is 10 μm or more and 150 μm or less, and the average aspect ratio of the phases (B) is 1:2 to 1:10. Provided is a ferromagnetic sputtering target capable of inhibiting the generation of particles during sputtering, and improving the pass-through flux to achieve a stable electrical discharge with a magnetron sputtering device. | 04-26-2012 |
20120097530 | Target of Sintered Compact, and Method of Producing the Sintered Compact - Provided is a target of sintered compact essentially consisting of an element of (A), an element of (B) and an element of (C) below, wherein the thermal conductivity is 2.5 W/mK or more and the oxygen concentration is 5000 ppm or more:
| 04-26-2012 |
20120094114 | Metal Foil with Electric Resistance Film and Production Method Thereof - A metal foil comprising an electric resistance film in which the metal foil is made of copper or copper alloy, the surface roughness of at least one surface thereof is set to a 10-point average roughness Rz of 6.0 μm to 8.0 μm, and an electric resistance film is formed on that surface, wherein the peel strength of the electric resistance film is 0.60 kN/m or more, and variation of the resistance value of the electric resistance film is ±10% or less. Provided is a copper foil with an electric resistance film in which an electric resistance film is formed on the copper foil to enable the resistor to be built into the substrate, the adhesiveness thereof to a resin substrate is ensured, and variation of the resistance value of the electric resistance film is reduced. | 04-19-2012 |
20120073964 | Titanium Target for Sputtering - The object of this invention is to provide a high quality titanium target for sputtering capable of reducing the impurities that cause generation of particles and abnormal discharge, which is free from fractures and cracks during high power sputtering (high rate sputtering), and capable of stabilizing the sputtering properties and effectively suppressing the generation of particles upon deposition. | 03-29-2012 |
20120045380 | Method of Storing Lanthanum Oxide Target, and Vacuum-Sealed Lanthanum Oxide Target - A method of storing a sputtering target made of lanthanum oxide, wherein a lanthanum oxide target to which a lanthanum fluoride film was formed and lanthanum oxide powder are charged in a vacuum pack with an oxygen transmission rate of 0.1 cm | 02-23-2012 |
20120043509 | Indium Oxide Sintered Compact, Indium Oxide Transparent Conductive Film, and Manufacturing Method of Indium Oxide Transparent Conductive Film - An indium oxide sintered compact containing zirconium as an additive, wherein the ratio of atomic concentration of zirconium to the sum of the atomic concentration of indium and the atomic concentration of zirconium is in the range of 0.5 to 4%, the relative density is 99.3% or higher, and the bulk resistance is 0.5 mΩ·cm or less. This invention aims to provide an indium oxide transparent conductive film of high transmittance in the visible light region and the infrared region, with low film resistivity, and in which the crystallization temperature can be controlled, as well as the manufacturing method thereof, and an oxide sintered compact for use in producing such transparent conductive film. | 02-23-2012 |
20120037501 | Tantalum Sputtering Target - Provided is a tantalum sputtering target containing 1 mass ppm or more and 100 mass ppm or less of molybdenum as an essential component, and having a purity of 99.998% or more excluding molybdenum and gas components. Additionally provided is a tantalum sputtering target according to the above further containing 0 to 100 mass ppm of niobium, excluding 0 mass ppm thereof, and having a purity of 99.998% or more excluding molybdenum, niobium and gas components. Thereby obtained is a high purity tantalum sputtering target that has a uniform and fine structure and which yields stable plasma and superior film evenness, in other words, uniformity. | 02-16-2012 |
20120034525 | Positive Electrode Active Material For Lithium Ion Battery - Disclosed is a positive electrode active material that provides an improved capacity density. Specifically disclosed is a positive electrode active material for a lithium ion battery with a layered structure represented by Li | 02-09-2012 |
20120034475 | Metal-Coated Polyimide Resin Substrate with Excellent Thermal Aging Resistance Properties - [Object] To provide a metal-coated polyimide resin substrate that does not deteriorate the initial adhesion between the metal-coated polyimide resin film and the metal layer and has high adhesion after aging at 150° C. for 168 hours. | 02-09-2012 |
20120031756 | Tantalum Sputtering Target - Provided is a tantalum sputtering target containing 1 mass ppm or more and 100 mass ppm or less of tungsten as an essential component, and having a purity of 99.998% or more excluding tungsten and gas components. Additionally provided is a tantalum sputtering target according to according to the above further containing 0 to 100 mass ppm of molybdenum and/or niobium, excluding 0 mass ppm thereof, wherein the total content of tungsten, molybdenum, and niobium is 1 mass ppm or more and 150 mass ppm or less, and wherein the purity is 99.998% or more excluding tungsten, molybdenum, niobium and gas components. Thereby obtained is a high purity tantalum sputtering target comprising a uniform and fine structure and which enables stable plasma and yields superior film evenness (uniformity). | 02-09-2012 |
20120031533 | Cu-Co-Si SYSTEM ALLOY FOR ELECTRONIC MATERIALS AND METHOD FOR MANUFACTURING SAME - The present invention provides Cu—Co—Si system alloys that have desirable mechanical and electrical characteristics as a copper alloy for electronic materials, and have uniform mechanical characteristics. The copper alloys for electronic materials contain 0.5 to 4.0 mass % Co, 0.1 to 1.2 mass % Si, and the balance being Cu and unavoidable impurities. An average grain size is 15 to 30 μm and an average difference between maximum grain size and minimum grain size in every observation field of 0.5 mm | 02-09-2012 |
20120024192 | Sputtering Target of Sintered Ti-Nb Based Oxide, Thin Film of Ti-Nb Based Oxide, and Method of Producing the Thin Film - Provided is a sputtering target of sintered Ti—Nb based oxide, wherein the sputtering target consists of titanium (Ti), niobium (Nb), and remainder being oxygen and unavoidable impurities, and the atomic ratio of Ti and Nb is 0.39≦(Nb/(Ti+Nb))≦0.79. The sputtering target of sintered Ti—Nb based oxide has a high refractive index and a low extinction coefficient. Also provided is a thin film of Ti—Nb based oxide obtained by using the foregoing target, which enables high-rate deposition. The thin film has superior transmittance, is subject to minimal reduction and variation of reflectivity, and is useful as an interference film or a protective film of an optical information recording medium, or as a part of a constituent layer of an optical recording medium. The thin film can also be applied to a glass substrate; that is, it can be used as a heat reflecting film, an antireflection film, or an interference filter. | 02-02-2012 |
20120018050 | STEEL FOR SURFACE LAYER HARDENING TREATMENT, SURFACE LAYER-HARDENED STEEL PART, AND METHOD OF MANUFACTURING THE SAME - In the steel for a surface layer hardening which is treated with carburizing in a temperature range of 800° C. to 900° C., chemical composition thereof contains, by mass %, C: 0.10% to 0.60%, Si: 0.01% to 2.50%, Mn: 0.20% to 2.00%, S: 0.0001% to 0.10%, Cr: 2.00% to 5.00%, Al: 0.001% to 0.50%, N: 0.0020% to 0.020%, P: 0.001% to 0.050%, and O: 0.0001% to 0.0030%; the remaining portion thereof includes Fe and unavoidable impurities; and the total amount of Cr, Si, and Mn satisfies, by mass %, 2.0≦Cr+Si+Mn≦8.0. | 01-26-2012 |
20120012463 | Method of Roughening Rolled Copper or Copper Alloy Foil - A rolled copper or copper alloy foil having a roughened surface formed of fine copper particles is obtained by subjecting a rolled foil to roughening plating with a plating bath containing copper sulfate (Cu equivalent of 1 to 50 g/L), 1 to 150 g/L of sulfuric acid, and one or more additives selected among sodium octyl sulfate, sodium decyl sulfate, and sodium dodecyl sulfate under the conditions of temperature of 20 to 50° C. and current density of 10 to 100 A/dm | 01-19-2012 |
20120012367 | Flexible Laminate and Flexible Electronic Circuit Board Formed by using the same - An adhesive-free flexible laminate formed from a polyimide film in which at least one surface has been plasma treated, a tie-coat layer formed on the surface of the plasma-treated polyimide film, a metal seed layer made of either copper or copper alloy and which is formed on the tie-coat layer, and a metal conductive layer made of either copper or copper alloy and which is formed on the metal seed layer, wherein the atomic percent of Cu inclusion in the tie-coat layer is 0.5 at % or less. Consequently, provided is a flexible laminate capable of effectively inhibiting the deterioration of the peel strength upon producing a flexible laminate (in particular a two-layer metalizing laminate). | 01-19-2012 |
20120009496 | FUEL CELL SEPARATOR MATERIAL, FUEL CELL SEPARATOR USING SAME, FUEL CELL STACK, AND METHOD FOR PRODUCING FUEL CELL SEPARATOR MATERIAL - A fuel cell separator material, comprising an alloy layer 6 containing Au and a first component containing Al, Cr, Co, Ni, Cu, Mo, Sn or Bi, or an Au single layer | 01-12-2012 |
20110318602 | Metal-Coated Polyimide Resin Substrate with Excellent Thermal Aging Resistance Properties - [Object] To provide a metal-coated polyimide resin substrate that does not deteriorate the initial adhesion between the metal-coated polyimide resin film and the metal layer and has high adhesion after aging at 150° C. for 168 hours. | 12-29-2011 |
20110311834 | TWO-LAYER FLEXIBLE SUBSTRATE, AND COPPER ELECTROLYTIC SOLUTION FOR PRODUCING SAME - It is an object of the invention to provide a two-layer flexible substrate that excels in folding endurance and free from occurrence of Kirkendall voids or the like even when lead portions of COF are plated with tin and heat treatment is performed. The present invention is directed to a two-layer flexible substrate in which a copper layer is provided on one or both faces of an insulating film by using a copper electrolytic solution, wherein an average size of copper crystal grains constituting the copper layer is equal to or greater than 1 μm and equal to or less than a thickness of the copper layer, and a ratio of peak intensity of (200) to a sum total of intensities of six principal peaks {[peak intensity of (200)]/[sum total of peak intensities of (111), (200), (220), (311), (400), (331)]} in the X-ray diffraction of the copper layer is equal to or greater than 0.4. The above copper electrolytic solution for forming the copper layer contains a chloride ion and one or more of thiourea, thiourea derivatives, and thiosulfuric acid as additives. | 12-22-2011 |
20110308940 | Lanthanum Target for Sputtering - Provided are a lanthanum target for sputtering which has a recrystallized structure with an average crystal grain size of 100 μm or less and has no spotty macro patterns on the surface; and a method of producing a lanthanum target for sputtering, wherein lanthanum is melted and cast to produce an ingot, the ingot is subject to knead forging at a temperature of 300 to 500° C. and subsequently subject to hot upset forging to form the shape into a rough target shape, and this is additionally subject to machining to obtain a target. This invention aims to offer technology for efficiently and stably providing a lanthanum target for sputtering which has no spotty macro patterns on the surface, and a method of producing the same. | 12-22-2011 |
20110300401 | Rolled Copper Foil or Electrolytic Copper Foil for Electronic Circuit, and Method of Forming Electronic Circuit using same - A rolled copper foil or electrolytic copper foil for an electronic circuit to be used for forming a circuit by etching, characterized in comprising a layer of metal of one or more types among a platinum group, gold and silver with an etching rate that is lower than the copper formed on an etching surface side of the rolled copper foil or the electrolytic copper foil, or alternatively comprising a layer of an alloy having the above-described metal as its main component. This invention aims to achieve the following upon forming a circuit by etching a copper foil of a copper clad laminate; specifically, to prevent sagging caused by the etching; to form a uniform circuit of the intended circuit width; to shorten the time of forming a circuit by etching as much as possible; to improve the etching properties in pattern etching; and to prevent the occurrence of short circuits and defects in the circuit width. | 12-08-2011 |
20110300017 | Method for Manufacturing High-Purity Erbium, High-Purity Erbium, Sputtering Target Composed of High-Purity Erbium, and Metal Gate Film having High-Purity Erbium as Main Component - Provided are a method for manufacturing high-purity erbium, wherein crude erbium oxide is mixed with reducing metal, erbium is reduced and distilled by heating the mixture in a vacuum, and the distillate is melted in an inert atmosphere to obtain high-purity erbium; and high-purity erbium, wherein the purity excluding rare-earth elements and gas components is 4 N or higher and the oxygen content is 200 wtppm or less. An object of this invention is to provide a method of highly purifying erbium, which has a high vapor pressure and is difficult to be refined in a molten metal state, as well as technology for efficiently and stably providing high-purity erbium obtained with the foregoing method, a sputtering target composed of high-purity erbium, and a metal gate film having high-purity erbium as a main component. | 12-08-2011 |