JCU CORPORATION Patent applications |
Patent application number | Title | Published |
20160138181 | SUBSTRATE PLATING DEVICE - A plating device includes a pl,ting bath containing therein a plating solution, a substrate holder for detachably holding a substrate, an anode disposed opposite to the substrate held by the substrate holder, a rail part stretched across an upper portion of the plating bath in parallel to the substrate holder, and a paddle suspended by the rail part and capable of reciprocating along the rail part. The paddle is vertically provided with a vane part rotatable round or pivotable on an axis part. The plating device can increase flow rate of a plating solution without installing a circulating pump outside a plating bath, and further can achieve same flow rate of the plating solution from a bottom of the plating bath to a level of the solution, enabling plating that forms a plating film having a uniform thickness on an entire region of a substrate and exhibits a high deposition rate. | 05-19-2016 |
20160137673 | SILICON OLIGOMER AND PRODUCTION METHOD THEREFOR - An object of the present invention is to provide a silicon oligomer having a novel function that has not been achieved by a conventional condensation product of water and a tetraalkoxysilane. Provided are a silicon oligomer represented by the following formula (I) and a production method therefor: | 05-19-2016 |
20160130712 | ELECTROPLATING SOLUTION FOR TIN OR TIN ALLOY, AND USE FOR SAME - An object of the present invention is to solve a problem in filling of a blind via or a through-hole with a conventionally used plating solution for tin or tin alloy plating where the filling itself cannot be achieved well, or even if the filling itself could be achieved, it takes an extremely long time. The electroplating solution for tin or tin alloy capable of solving the problem includes the following components (a) and (b):
| 05-12-2016 |
20150294894 | SUBSTRATE PLATING JIG - A plating jig that can form a metal plating film simultaneously on both surfaces of a semiconductor wafer by one plating process. The plating jig includes a base section and a cover section that can hold a substrate to be plated, and a center section that holds the substrate between the base section and cover section; the base section, the cover section and the center section each having an annular portion having an opening at a center thereof; seal packings each having a conductive ring disposed thereon being attached to each of facing surfaces of the annular portions of the base section and the cover section; the substrate to be plated being disposed inside the opening of the center section; and the substrate to be plated being held from front and back surfaces thereof with the seal packings attached to the cover section and the center section. | 10-15-2015 |
20150068890 | SUBSTRATE PLATING JIG AND PLATING DEVICE USING SAME - A plating jig and a plating device used for plating treatment of a substrate. The plating jig includes a mechanism rotatably driving a substrate holder, and detachably mounted on a plating bath integrally with a support portion. The plating jig includes the support portion which is formed in an engageable manner with a side wall of the plating bath, and the substrate holder which is vertically rotatably mounted on the support portion. The plating jig further includes a rotary mechanism for the substrate holder. The plating device utilizes the plating jig. | 03-12-2015 |
20150048053 | SELECTIVE ETCHING METHOD - A layer of a metal selected from titanium, niobium, tungsten, molybdenum, ruthenium, rhodium, arsenic, aluminum and gallium, an oxide of the metal, a nitride of the metal, silicon nitride, hafnium nitride, tantalum nitride, or an alloy of these metals, the layer being provided on an underlying base material selected from glass, silicon, copper and nickel, is selectively etched with an alkaline etching solution containing a predefined complexing agent. | 02-19-2015 |
20140251798 | SUBSTRATE ELECTROPLATING JIG - A substrate plating jig including a first plate-shaped holding member and a second holding member including a ring-shaped seal packing, including an internal circumferential part, an external circumferential part, and an opening formed at the center of the ring-shaped seal packing. Leading edges of the internal circumferential part and external circumferential part of the ring-shaped seal packing come in close contact with a substrate surface-to-be plated and the first holding member, respectively. The edge of the substrate-to-be-plated is held between the internal circumferential part and the external circumferential part of the ring-shaped seal packing. The substrate surface-to-be-plated is exposed in the opening. A first ring-shaped conducting member includes multiple protruding contact points inside the ring-shaped seal packing, and the substrate surface-to-be-plated comes in contact with the protruding contact points inside the ring-shaped seal packing by interposing and clamping the substrate-to-be-plated between the first holding member and the second holding member. | 09-11-2014 |
20130043137 | NOVEL COMPOUND AND USE THEREOF - Provided is a copper plating technique that enables the filling of high aspect-ratio via-holes and through-holes in semiconductor substrates such as silicon substrates, organic material substrates or ceramic substrates. The disclosed technique involves a tertiary amine compound, which is obtained by reacting a heterocyclic compound with the epoxy group of a glycidyl ether group of a compound that has three or more glycidyl ether groups, and a quaternary amine compound thereof, as well as a copper plating additive, a copper plating bath, and a copper plating method employing the compounds. | 02-21-2013 |