JAPAN PIONICS CO., LTD. Patent applications |
Patent application number | Title | Published |
20140322124 | METHOD OF PROCESSING DISCHARGE GAS DISCHARGED FROM PRODUCTION PROCESS OF GALLIUM NITRIDE COMPOUND SEMICONDUCTOR - The present invention provides a method of processing discharge gas containing ammonia, hydrogen, nitrogen, and an organic metal compound discharged from the production process of a gallium nitride compound semiconductor. The discharge gas is brought into contact with a cleaning agent prepared by impregnating an alkali metal compound with a metal oxide to remove the organic metal compound from the discharge gas. The discharge gas from which an organic metal compound is removed is brought into contact with an ammonia decomposition catalyst on heating to decompose the ammonia into nitrogen and hydrogen. The discharge gas in which ammonia is decomposed is brought into contact with palladium alloy membrane on heating to recover hydrogen that has penetrated through the palladium alloy membrane. After an organic metal compound is removed to liquefy the ammonia contained in the discharge gas as described above, a pressurization process and a cooling process is conducted by a heat pump to pressurize and cool the discharge gas from which an organic metal compound is removed to liquefy the ammonia contained in the discharge gas and separate the liquefied ammonia from hydrogen and nitrogen so as to recover the liquefied ammonia. The recovered hydrogen and ammonia are supplied to and reused in the production process of a gallium nitride compound semiconductor. | 10-30-2014 |
20130312456 | METHOD OF RECOVERING AMMONIA AND METHOD OF RECYCLING AMMONIA BY USING THE SAME - There are provided methods capable of easily and efficiently recovering and recycling ammonia from exhaust gas containing a small amount of ammonia, the exhaust gas being exhausted from a production process of a gallium nitride compound semiconductor. The method of recovering ammonia includes filtering exhaust gas containing ammonia, hydrogen, nitrogen, and a solid compound with a filter to remove the solid compound from the exhaust gas; pressurizing and cooling the filtered exhaust gas with a heat pump to liquefy ammonia contained in the filtered exhaust gas; and separating liquefied ammonia from hydrogen and nitrogen to recover liquefied ammonia. The method of recycling ammonia includes evaporating recovered liquid ammonia; mixing the evaporated ammonia with another crude ammonia to obtain mixed gas; purifying the mixed gas; and supplying the purified gas to the production process of a gallium nitride compound semiconductor. | 11-28-2013 |
20130074876 | CLEANING APPARATUS AND CLEANING METHOD FOR COMPONENTS OF METAL ORGANIC CHEMICAL VAPOR DEPOSITION DEVICE - A cleaning apparatus a metal organic chemical vapor deposition (MOCVD) device incorporating a susceptor rotatably holding the plurality of substrate holders through a rotating mechanism of a bearing; and a cleaning method for efficiently removing deposits from components of the device. The cleaning apparatus includes storage for the susceptor and the plurality of substrate holders; a means for rotating the susceptor and/or a means for rotating the plurality of substrate holders; a heater; a cleaning gas-introducing port; and a cleaning gas-discharging port. The susceptor holding the plurality of substrate holders is stored in the cleaning apparatus after the device is used for vapor phase epitaxy, and cleaning gas is introduced to the susceptor while the susceptor and/or each of the substrate holders is rotated, so as to remove deposits deposited during vapor phase epitaxy. | 03-28-2013 |