INVENLUX LIMITED Patent applications |
Patent application number | Title | Published |
20140203287 | NITRIDE LIGHT-EMITTING DEVICE WITH CURRENT-BLOCKING MECHANISM AND METHOD FOR FABRICATING THE SAME - A nitride light emitting device comprises a current blocking Schottky junction zone formed below the p-electrode and above the active region so that current injection from the p-electrode to the area of the active region that is vertically shaded by the p-electrode is blocked by the Schottky junction zone. A method for fabricating the same is also provided. | 07-24-2014 |
20140191187 | SUBMICRO-FACET LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME - A light emitting device comprises an n-type layer, a p-type layer, and an active region sandwiched between the n-type layer and the p-type layer, wherein the active-region has a wavy structure with nano or micro fluctuations in its thickness direction. The n-type layer comprises crystal facets on its upper surface, and the active-region is conformally formed on the upper surface of the n-type layer and substantially follows the shape of the crystal facets so as to form the wavy structure. A method for fabricating the same is also provided. | 07-10-2014 |
20130187124 | LIGHTING-EMITTING DEVICE WITH NANOSTRUCTURED LAYER AND METHOD FOR FABRICATING THE SAME - A light emitting device has a nanostructured layer with nanovoids. The nanostructured layer can be provided below and adjacent to active region or on a substrate or a template below an n-type layer for the active region, so as to reduce strain between epitaxial layers in the light emitting device. A method of manufacturing the same is provided. | 07-25-2013 |
20130119414 | LIGHT-EMITTING DEVICES WITH VERTICAL LIGHT-EXTRACTION MECHANISM - A light-emitting device comprises a lattice structure to minimize the horizontal waveguide effect by reducing light traveling distance in the light-absorption medium of the light-emitting devices, and to enhance light extraction from the light-emitting layer. The lattice structure includes sidewalls and/or rods embedded in the light-absorption medium and dividing the light-absorption medium into a plurality of area units. The area units are completely isolated or partially separated from each other by the sidewalls. Also provided is a method of fabricating a light-emitting device that comprises a lattice structure, which lattice structure includes sidewalls and/or rods embedded in the light-absorption medium and dividing the light-absorption medium into a plurality of area units. | 05-16-2013 |
20130048939 | LIGHT EMITTING DEVICE HAVING GROUP III-NITRIDE CURRENT SPREADING LAYER DOPED WITH TRANSITION METAL OR COMPRISING TRANSITION METAL NITRIDE - A light-emitting device, such as a light-emitting diode (LED), has a group III-nitride current spreading layer which is either doped with transition metal, or comprises alternating transition metal nitride layer and group III-nitride layer. Also provided is a light-emitting device, such as a light-emitting diode (LED), having a quantum well doped with transition metal. Also provided is a method of forming transition-metal containing AlInGaN electrical conductive material. | 02-28-2013 |
20120267658 | LARGE-AREA LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME - A III-nitride light emitting device having a substrate with a conductive grid made of conductive lines formed thereon. An active-region is sandwiched between an n-type layer and a p-type layer forming an LED structure, and the conductive grid is in ohmic contact with the n-type layer. Also provided is a method for fabricating the same. | 10-25-2012 |
20120267655 | LIGHT-EMITTING DEVICE WITH LOW FORWARD VOLTAGE AND METHOD FOR FABRICATING THE SAME - A light emitting device with reduced forward voltage V | 10-25-2012 |