HITACHI-KOKUSAI ELECTRIC INC. Patent applications |
Patent application number | Title | Published |
20160141173 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, GAS SUPPLY SYSTEM, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device includes alternately performing supplying a first process gas containing silicon and a halogen element to a substrate having a surface on which monocrystalline silicon and an insulation film are exposed and supplying a second process gas containing silicon and not containing a halogen element to the substrate, and supplying a third process gas containing silicon to the substrate, whereby a first silicon film is homo-epitaxially grown on the monocrystalline silicon and a second silicon film differing in crystal structure from the first silicon film is grown on the insulation film. | 05-19-2016 |
20160126337 | SUBSTRATE PROCESSING APPARATUS, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SUBSTRATE PROCESSING METHOD - A substrate processing apparatus includes a substrate having an SiGe film or Ge film exposed on at least a portion of a surface thereof, a process chamber configured to process the substrate, an etching gas supply part configured to supply an etching gas into the process chamber, a deposition gas supply part configured to supply gas containing at least an Si-containing gas as a deposition gas into the process chamber, and a control part configured to control the deposition gas supply part and the etching gas supply part so as to remove a Ge oxide film formed on a surface of the SiGe film or the Ge film by supplying the etching gas and to epitaxially grow an Si-containing film on at least the SiGe film or the Ge film by supplying the Si-containing gas after removing the Ge oxide film by the supply of the etching gas. | 05-05-2016 |
20160111466 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - An oxide film capable of suppressing reflection of a lens is formed under a low temperature. A method of manufacturing a semiconductor device includes (a) forming a lower layer oxide film on a lens formed on a substrate using a first processing source containing a first element, a second processing source containing a second element, an oxidizing source and a catalyst, the lower layer oxide film having a refractive index greater than that of air and less than that of the lens; and (b) forming an upper layer oxide film on the lower layer oxide film using the first processing source, the oxidizing source and the catalyst, the upper layer oxide film having a refractive index greater than that of the air and less than that of the lower layer oxide film. | 04-21-2016 |
20160097126 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A Technique includes forming a film on a substrate in a process chamber by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing supplying a precursor gas to the substrate, exhausting the precursor gas from the process chamber, supplying an oxygen-containing gas to the substrate, exhausting the oxygen-containing gas from the process chamber, supplying a hydrogen-containing gas to the substrate, and exhausting the hydrogen-containing gas from the process chamber. At least one among an amount of an exhausted gas and an exhaust rate in the act of exhausting the oxygen-containing gas is set greater than that in the act of exhausting the precursor gas, and at least one among an amount of an exhausted gas and an exhaust rate in the act of exhausting the hydrogen-containing gas is set greater than that in the act of exhausting the precursor gas. | 04-07-2016 |
20160094281 | WIRELESS COMMUNICATION APPARATUS AND WIRELESS COMMUNICATION METHOD - In a capacity region of a multiple access channel which is a theoretical limit, a combination of transmission speeds that are equal between the channels is realized. A wireless communication apparatus receives first to third frames, which are sequentially transmitted. The second frame is transmitted at a head time different from that of the first and third frames, and the second frame receives a first signal which is temporally superposed to both the first and third frames. A replica signal of the first frame is generated based on the result obtained by demodulating the first frame, and a second signal which is obtained by canceling it from the first signal is generated. The second frame is demodulated by using the second signal, and the interference from the first frame in the second frame in the second signal is canceled, and the interference from the third frame remains. | 03-31-2016 |
20160093508 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - The present invention provides a technology that includes: forming an intermediate film on a substrate having an insulating film formed thereon; and forming a metal film on the intermediate film. The intermediate film is more susceptible to oxidation than the metal film and has a smaller thickness than the metal film. | 03-31-2016 |
20160090651 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes a processing chamber configured to accommodate a substrate therein; a first processing gas supply part configured to supply a first processing gas to the substrate, the first processing gas supply part including a vaporizer configured to vaporize a first processing gas precursor into the first processing gas; a second processing gas supply part configured to supply a second processing gas to the substrate; a vaporizer remaining amount measuring part configured to measure a remaining amount of the first processing gas precursor within the vaporizer; and a control part configured to adjust a number of cycles for supplying the first processing gas and the second processing gas based on the remaining amount of the first processing gas precursor. | 03-31-2016 |
20160087671 | HIGH FREQUENCY CIRCUIT DEVICE - A high frequency circuit device that can avoid an occurrence of a stress concentration to a dielectric substrate during a temperature increase caused by a difference in coefficients of linear expansions of a chassis and a metal housing of a high frequency module is provided. | 03-24-2016 |
20160086818 | SUBSTRATE PROCESSING APPARATUS AND A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - The temperature of a substrate is elevated rapidly while improving the temperature uniformity of the substrate. The substrate is loaded into a process chamber, the loaded substrate is supported on a first substrate support unit, a gas is supplied to the process chamber, the temperature of the substrate supported on the first substrate support unit is elevated in a state of increasing the pressure in the process chamber to higher than the pressure during loading of the substrate or in a state of increasing the pressure in the process chamber to higher than the pressure during processing for the surface of the substrate, the substrate supported on the first substrate support unit is transferred to the second substrate support unit and supported thereon after lapse of a predetermined time, and the surface of substrate is processed while heating the substrate supported on the second substrate support unit. | 03-24-2016 |
20160086801 | METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of processing a substrate includes: growing a first layer including a first element and a second element by supplying a first precursor containing the first element and a second precursor containing the second element to the substrate; and growing a second layer including the second element and a third element by supplying the second precursor and a third precursor containing the third element to the substrate. The act of growing the first layer and the act of growing the second layer are alternately performed a predetermined number of times, and the act of growing the first layer is performed before the act of growing the second layer to selectively grow a laminated film on a conductive film exposed on the surface of the substrate. The first layer and the second layer are laminated to form the laminated film. | 03-24-2016 |
20160086791 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - The present invention increases controllability of a composition ratio of a multi-element film that contains a predetermined element and at least one element selected from the group consisting of boron, oxygen, carbon and nitrogen. There is provided a method of manufacturing a semiconductor device, including: forming a laminated film where a first film and a second film are laminated on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) forming the first film being free of borazine ring structure and including a predetermined element and at least one element selected from the group consisting of oxygen, carbon and nitrogen; and (b) forming the second film having a borazine ring structure and including at least boron and nitrogen. | 03-24-2016 |
20160083843 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes a process chamber configured to process a substrate; a shower head installed at an upstream side of the process chamber; a gas supply pipe connected to the shower head; a first exhaust pipe connected to a downstream side of the process chamber; a second exhaust pipe connected to a second wall surface, which is different from a first wall surface adjacent to the process chamber, in wall surfaces forming the shower head; a pressure detecting part installed in the second exhaust pipe; and a control part configured to control each of the process chamber, the shower head, the gas supply pipe, the first exhaust pipe, the second exhaust pipe, and the pressure detecting part. | 03-24-2016 |
20160079101 | SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - The present invention provides a structure and a technique through which a reaction heat generated in a substrate process can be absorbed in a low temperature range and a temperature of a substrate support (susceptor) can remain at a predetermined temperature or less. There is provided a substrate processing apparatus including: a substrate support including a heater and a cooling channel; a heater power supply; a thermal detector; a coolant supply unit; a controller configured to control the heater power supply and the coolant supply unit to: supply a first power to the heater without a substrate placed on the substrate support while supplying the coolant to the cooling channel; and supply a second power to the heater with the substrate placed on the substrate support while supplying the coolant to the cooling channel. | 03-17-2016 |
20160079070 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a predetermined number times a cycle including: supplying a first process gas to the substrate; and supplying a second process gas to the substrate, wherein the act of supplying the first process gas and the supplying the second process gas are performed in a state where the substrate is maintained at a predetermined temperature of room temperature or more and 450 degrees C. or less; and a third process gas, which reacts with byproducts produced by a reaction of the first process gas and the second process gas, is supplied to the substrate simultaneously with at least one of the act of supplying the first process gas or the act of supplying the second process gas. | 03-17-2016 |
20160079056 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - A technique includes forming a film having a borazine ring structure and containing boron and nitrogen on a substrate by intermittently performing an act of simultaneously performing: (a) supplying borazine-based gas including a ligand to the substrate; and (b) supplying a ligand desorption gas which desorbs the ligand to the substrate, wherein the (a) and (b) are performed under a condition where the borazine ring structure in the borazine-based gas is held. | 03-17-2016 |
20160078314 | Image Retrieval Apparatus, Image Retrieval Method, and Recording Medium - An image retrieval apparatus comprises: a memory unit that stores image feature values; an acquisition unit that acquires a first image feature value for a retrieval target image; a retrieval unit that retrieves an image feature value that is similar to the first image feature value from the image feature values, based on the first image feature value; a determining unit that determines a linear conversion parameter to be used for linear conversion out of a group of linear conversion parameters based on image feature values for images of the same photographic subject obtained under conditions, based on the first image feature value and image feature values for said photographic subject; a conversion unit that converts the first image feature value by the linear conversion parameter, and converts the image feature value using said linear conversion parameter; and an output unit that outputs the conversion results. | 03-17-2016 |
20160078163 | MANAGEMENT APPARATUS, SUBSTRATE PROCESSING SYSTEM AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - A management apparatus includes: a manipulation & display unit including a user interface for selecting a reference device information, and configured to display: a difference between the device information obtained from the substrate processing device and the reference device information selected via the user interface; a content of the reference device information; and a content of the device information, and further configured to receive a command for modifying the device information; and a control unit configured to modify the device information based on the command received from the manipulation & display unit and configured to transmit a modified device information to the substrate processing device. | 03-17-2016 |
20160076149 | SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND FURNACE LID - By suppressing a re-liquefaction of a processing gas in a reaction tube, the processing gas is maintained in a gaseous state. There is provided a substrate processing apparatus that includes a reaction tube, a supply unit, an exhaust unit, a first heating unit configured to heat a substrate in the reaction tube, a second heating unit configured to heat a downstream portion of a reactant in gaseous state flowing in the reaction tube from the supply unit toward the exhaust unit, and a furnace lid, wherein the furnace lid includes a heat absorbing unit facing a lower surface of a lower end portion of the reaction tube and being heated by the second heating unit, the heat absorbing unit having an outer perimeter surface disposed outer than an inner circumference surface of the lower end portion. | 03-17-2016 |
20160071721 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - An object of the present invention is to form a good thin film while suppressing generation of foreign substances in a low temperature region. Provided is a method of manufacturing a semiconductor device, including: (a) forming a thin film containing at least a predetermined element and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including: (a-1) supplying a source gas containing the predetermined element and a halogen element to the substrate in a process container; and (a-2) supplying a reaction gas composed of carbon, nitrogen, and hydrogen to the substrate in the process container; and (b) modifying byproduct adhered to an inside of the process container by supplying a nitriding gas into the process container after (a). | 03-10-2016 |
20160071720 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A technique includes forming a laminated film on a substrate by performing a cycle a predetermined number of times. The cycle includes forming a first film which contains at least a predetermined element and oxygen, and forming a second film which contains at least the predetermined element, oxygen and carbon. The first film and the second film are laminated to form the laminated film. | 03-10-2016 |
20160068952 | SUBSTRATE PROCESSING APPARATUS AND GAS DISTRIBUTION ASSEMBLY THEREOF - A substrate processing apparatus and a gas distribution assembly thereof are disclosed. A substrate processing apparatus includes a susceptor configured to place a substrate on it, a process gas distribution assembly configured to supply a process gas on a surface of the substrate from the upper side of the susceptor and an inert gas distribution assembly arranged next to the process gas distribution assembly, configured to supply an inert gas on the surface of the substrate from the upper side of the susceptor. The substrate processing apparatus further includes a gas exhausting system, the gas exhausting system has a gas exhausting aperture defined between the process gas distribution assembly and the inert gas distribution assembly, having an exhausting buffer for holding the gases passed through the gas exhausting aperture. | 03-10-2016 |
20160064219 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A technique includes loading a substrate into a process chamber, supporting the substrate by a mounting table having a heater therein in the process chamber, forming a film on the substrate by supplying a processing gas into the process chamber in a state where the mounting table having the substrate supported thereon is disposed in a first position and the heater is turned on, unloading the substrate on which the film is formed, and supplying a reactive gas into the process chamber in a state where the mounting table is disposed in a second position and the heater is turned on. The second position is closer to a ceiling portion in the process chamber than the first position. | 03-03-2016 |
20160060755 | SUBSTRATE PROCESSING APPARATUS - There is provided a substrate processing apparatus. The substrate processing apparatus includes a processing space configured to process a substrate placed on a substrate receiving surface on a substrate support, a gas supply system configured to supply gases into the processing space from the opposite side of the substrate receiving surface, an exhaust buffer chamber including a communication hole communicating with the processing space at least at a side portion of the processing space and a gas flow blocking wall extending in a blocking direction of the gases flowing through the communication hole, and a first heating element configured to heat the exhaust buffer chamber. | 03-03-2016 |
20160056044 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes: (a) supplying a halogen-based source gas containing a first element to a substrate; (b) supplying a reaction gas containing a second element to react with the first element to the substrate; (c) forming a first layer containing the first element and the second element by time-dividing and performing (a) and (b) a predetermined number of times; (d) supplying an organic source gas containing the first element to the substrate; (e) supplying the reaction gas to the substrate; (f) forming a second layer containing the first element and the second element by time-dividing and performing (d) and (e) a predetermined number of times; and (g) forming a thin film containing the first element and the second element on the substrate by time-dividing and performing (c) and (f) a predetermined number of times. | 02-25-2016 |
20160053377 | SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SUBSTRATE PROCESSING METHOD - With the miniaturization of semiconductors and the increase in the diameter of wafers, the wafer size increases. Therefore, a supply gas flow rate also increases as compared with a process of a conventional wafer size. Thus, it is difficult to perform an exhaust pressure control in the same manner as a conventional processing process. ON/OFF valves provided in a plurality of exhaust pipes communicating with a processing chamber and a vacuum pump, and a controller configured to control the ON/OFF valves are provided, and it is possible to cope with the increase in the diameter of the wafer by performing a valve on/off and pressure control operation in a process event. | 02-25-2016 |
20160053373 | SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD OF PROCESSING SUBSTRATE - A substrate processing apparatus, including: a processing chamber having a first and a second processing regions; a substrate mounting table rotatably installed in the processing chamber on which a substrate is mounted, and a rotation instrument configured to rotate the substrate mounting table such that the substrate passes through the first processing region and the second processing region in this order, at least one of the first and the second processing regions including: a gas supply part including a line-shaped opening portion extending in a radial direction of the substrate mounting table and configured to supply a gas from the opening portion into the region; and a gap holding member protruding from a ceiling of the processing chamber opposing the substrate, around the opening portion, toward the substrate such that a space on the substrate has a predetermined gap to serve as a passage of the supplied gas. | 02-25-2016 |
20160042940 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - A method of manufacturing a semiconductor device includes: (a) forming a first film containing a metal element on a substrate by performing a cycle a predetermined number of times, the cycle including: (a-1) supplying a first precursor gas being a fluorine-free inorganic gas containing the metal element to the substrate; and (a-2) supplying a first reactant gas having reducibility to the substrate; (b) forming a second film containing the metal element on the first film by performing a cycle a predetermined number of times, the cycle including: (b-1) supplying a second precursor gas containing the metal element and fluorine to the substrate; and (b-2) supplying a second reactant gas having reducibility to the substrate; and (c) forming a film containing the metal element and obtained by the first film and the second film being laminated on the substrate by performing the (a) and (b). | 02-11-2016 |
20160037198 | REBROADCASTING SYSTEM - A rebroadcasting system for retransmitting a television broadcast, which was received from a satellite, in a segment broadcasting, such as one-segment broadcasting and three-segment broadcasting, comprises: charging a solar battery during the daytime; recording broadcasts during the retransmission halt time; retransmitting television broadcasts, which are received from the satellite, in real time by use of central (one or three) segments and the charged power during any time when the output of the solar battery is low, for example, during the night, before sunset, after sunrise, or a rainy day; reproducing the recorded broadcasts; and retransmitting the reproduced recorded programs by use of any remaining segments, for example, segments adjacent to the central segments. | 02-04-2016 |
20160032457 | ATOMIC LAYER DEPOSITION PROCESSING APPARATUS TO REDUCE HEAT ENERGY CONDUCTION - Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a substrate processing apparatus comprises a chamber lid assembly including a first heating member, a susceptor positioned proximal to the chamber lid assembly, wherein the susceptor includes a second heating member for heating the substrate, a process chamber accommodating at least the chamber lid assembly and the susceptor and a controller configured to control the first heating member so as to refrain the conduction of heat energy generated by the second heating member from the susceptor to the chamber lid assembly. | 02-04-2016 |
20160024659 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A technique includes forming a film containing a first element, a second element and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing supplying a first precursor having chemical bonds between the first elements to a substrate, supplying a second precursor having chemical bonds between the first element and carbon without having the chemical bonds between the first elements to the substrate, and supplying a first reactant containing the second element to the substrate. | 01-28-2016 |
20160024650 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes: a reaction zone configured to accommodate a substrate; a substrate supporting member having a projecting part extending outward; a partition plate configured to partition off the reaction zone and a transferring zone, coming in contact with the projecting part of the substrate supporting member when the substrate is processed; a process gas supplying system configured to supply a process gas to the reaction zone; and a partitioning purge gas supplying system configured to supply a purge gas to a gap formed between the projecting part and the partition plate when supplying the process gas to the substrate. | 01-28-2016 |
20160002789 | SUBSTRATE PROCESSING APPARATUS, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM - A substrate processing apparatus includes a processing chamber housing a substrate, a vaporizer which vaporizes processing liquid and supply processing gas into the processing chamber, a reserve tank storing the processing liquid, a line switching unit connected to the reserve tank, a tank supply pipe connected to the line switching unit and supplies the processing liquid to the reserve tank, an exhausting unit connected to the line switching unit and exhausts the processing liquid in the reserve tank, and a controlling unit which controls the line switching unit to exhaust the processing liquid for exhausting the processing liquid from the reserve tank to the exhausting unit and exhaust the processing liquid in the pipe for supplying the processing liquid from the tank supply pipe to the exhausting unit before and/or after supplying the processing liquid from the processing liquid supplying pipe to the reserve tank. | 01-07-2016 |
20160002787 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes a shower head configured to disperse a gas; a process vessel installed at a downstream side of the shower head and configured to have a process space that allows a substrate to be processed by a process gas therein; a gas supplier connected to the shower head; a shower head gas exhauster connected to the shower head; and a capturing assembly configured to capture a component different from the process gas within the shower head. | 01-07-2016 |
20150376781 | CLEANING METHOD, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - There is provided a cleaning method including cleaning an interior of a process chamber in which a substrate is processed, by supplying a cleaning gas into the process chamber and exhausting the cleaning gas from the process chamber via an exhaust pipe; and cooling the exhaust pipe by maintaining a state where distribution of the cleaning gas into the exhaust pipe is substantially stopped. Also, the act of cleaning the interior of the process chamber and the act of cooling the exhaust pipe are repeated alternately. | 12-31-2015 |
20150371883 | SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - In the present invention, a substrate is placed at a predetermined position on a substrate support even though the substrate is deviated on a substrate transfer unit. | 12-24-2015 |
20150371875 | SUBSTRATE PROCESSING APPARATUS - Cleaning processing of each of the inside of a shower head and the inside of a processing space can be sufficiently or appropriately performed even when gas supply is performed via the shower head. A substrate processing apparatus includes a processing space for processing a substrate, a shower head buffer chamber disposed adjacent to the processing space with a dispersion plate having through-holes therebetween, an inert gas supply system configured to supply an inert gas into the shower head buffer chamber to form a gas curtain in the shower head buffer chamber, a first cleaning gas supply system configured to supply a cleaning gas into the processing space, and a control member configured to control the inert gas supply system and the first cleaning gas supply system to concurrently supply the cleaning gas into the processing space and the inert gas into the shower head buffer chamber. | 12-24-2015 |
20150371832 | PLASMA PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The present invention increases uniformity of plasma processing in a surface to be processed of an object to be processed or increases uniformity of plasma processing between objects to be processed. There is provided a plasma processing apparatus including: a processing container; a gas supply system; an exhaust system; a plasma generating unit; a gas flow path installed between an outer wall of the processing container and the plasma generating unit, the gas flow path guiding a temperature controlling gas to flow along the outer wall of the processing container; a plurality of gas introduction holes disposed along a circumferential direction of the processing container and configured to introduce the temperature controlling gas into the gas flow path; and a gas exhaustion hole configured to exhaust the temperature controlling gas passed through the gas flow path. | 12-24-2015 |
20150370245 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND CONTROL PROGRAM - The present disclosure provides a substrate processing apparatus, a substrate processing method, a semiconductor device manufacturing method, and a control program capable of controlling thickness uniformity of a film formed on a substrate. The substrate processing apparatus includes a process chamber into which a substrate is transferred; a heating device heating the substrate, transferred into the process chamber, from its periphery side; a cooling device cooling the substrate, transferred into the process chamber, from its periphery side; a process gas supply unit supplying a process gas into the process chamber; and a control unit controlling the heating device and the cooling device to generate temperature difference between a center and the periphery sides of the substrate and controls the process gas supply unit. The control unit operates the process gas supply unit to stop operation of the cooling device during supply of the process gas into the process chamber. | 12-24-2015 |
20150368794 | CLEANING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, RECORDING MEDIUM, AND CLEANING COMPLETION DETERMINING METHOD - According to one aspect of the present disclosure, there is provided a cleaning method including: cleaning a component in which a deposit adhering to the component constituting an apparatus is removed by supplying and discharging a cleaning gas, wherein the act of cleaning includes controlling the apparatus so that a signal, which indicates a concentration of a predetermined gas generated by a reaction of the deposit and the cleaning gas, reaches a predetermined upper limit value or less and then stays within a range between the predetermined upper limit value and a predetermined lower limit value for a predetermined time period. | 12-24-2015 |
20150364318 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS AND RECORDING MEDIUM - A method for manufacturing a semiconductor device includes forming a thin film containing a specific element and having a prescribed composition on a substrate by alternately performing the following steps prescribed number of times: forming a first layer containing the specific element, nitrogen, and carbon on the substrate by alternately performing prescribed number of times: supplying a first source gas containing the specific element and a halogen-group to the substrate, and supplying a second source gas containing the specific element and an amino-group to the substrate, and forming a second layer by modifying the first layer by supplying a reactive gas different from each of the source gases, to the substrate. | 12-17-2015 |
20150361554 | SUBSTRATE PROCESSING APPARATUS - A mechanism includes a shower head; and a process space installed at a downstream side of the shower head. The shower head includes: a lid of the shower head having a through hole formed therein; a first dispersion mechanism having a front end to be inserted into the through hole and the other end connected to a gas supplier; a gas guide including a plate part configured to be widened in a downward direction, and a connecting part installed between the plate part and the lid, the connecting part having at least one hole formed therein; and a second dispersion mechanism installed at a downstream side of the gas guide. | 12-17-2015 |
20150357181 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - Technique includes forming a film containing first element, second element and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing forming a first solid layer having thickness of more than one atomic layer and equal to or less than several atomic layers and containing chemical bonds of the first element and carbon by supplying a precursor having the chemical bonds to the substrate under a condition where the precursor is pyrolyzed and at least some of the chemical bonds contained in the precursor are maintained without being broken, and forming a second solid layer by plasma-exciting a reactant containing the second element and supplying the plasma-excited reactant to the substrate, or by plasma-exciting an inert gas and supplying the plasma-excited inert gas and a reactant containing the second element which is not plasma-excited to the substrate. | 12-10-2015 |
20150340226 | SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - A method of manufacturing a semiconductor device by processing a substrate by supplying a processing space with a gas dispersed in a buffer space disposed at an upstream side of the processing space is provided. The method includes (a) transferring the substrate into the processing space while exhausting a transfer space of the substrate by a first vacuum pump; (b) closing a first valve disposed at a downstream side of the first vacuum pump; (c) supplying the gas into the processing space via the buffer space; and (d) exhausting the buffer space through an exhaust pipe connected to a downstream side of the first valve. | 11-26-2015 |
20150334849 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND RECORDING MEDIUM - Manufacturing quality of a semiconductor device can be improved, and manufacturing throughput can be improved. A method of manufacturing a semiconductor device includes (a) placing a substrate on a substrate supporting unit installed in a processing chamber, the substrate having thereon a solder with an oxygen-containing film on a surface thereof, (b) reducing the oxygen-containing film by supplying a reducing gas into the processing chamber while maintaining a thermal conductivity of an inner atmosphere of the processing chamber at a first thermal conductivity, and (c) melting the solder by supplying a thermally conductive gas into the processing chamber while maintaining the thermal conductivity of the inner atmosphere of the processing chamber at a second thermal conductivity higher than the first thermal conductivity. | 11-19-2015 |
20150332916 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device, includes forming a thin film containing silicon, oxygen and carbon or a thin film containing silicon, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas serving as a silicon source and a carbon source or a precursor gas serving as a silicon source but no carbon source, and a first catalyst gas to the substrate; supplying an oxidizing gas and a second catalyst gas to the substrate; and supplying a modifying gas containing at least one selected from the group consisting of carbon and nitrogen to the substrate. | 11-19-2015 |
20150325447 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - Provided is a technique of adjusting a work function. A method of manufacturing a semiconductor device includes forming a film having a predetermined thickness and containing a first metal element, carbon and nitrogen on a substrate by: (a) forming a first layer containing the first metal element and carbon by supplying a metal-containing gas containing the first metal element and a carbon-containing gas to the substrate M times and (b) forming a second layer containing the first metal element, carbon and nitrogen by supplying a nitrogen-containing gas to the substrate having the first layer formed thereon N times to nitride the first layer, wherein M and N are selected in a manner that a work function of the film has a predetermined value (where M and N are natural numbers). | 11-12-2015 |
20150311060 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device is disclosed. The method includes forming a thin film containing a predetermined element, boron, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes forming a first layer containing boron and a halogen group by supplying a first precursor gas containing boron and the halogen group to the substrate; and forming a second layer containing the predetermined element, boron, carbon, and nitrogen by supplying a second precursor gas containing the predetermined element and an amino group to the substrate and modifying the first layer. | 10-29-2015 |
20150303054 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - There is provided a method for manufacturing a semiconductor device, including: forming a film on a substrate by performing a cycle a prescribed number of times, the cycle including: (a) supplying a source gas to the substrate in a process chamber; (b) exhausting the source gas remained in the process chamber; (c) supplying a reactive gas to the substrate in the process chamber; and (d) exhausting the reactive gas remained in the process chamber, wherein in (a), the source gas is supplied into the process chamber in a state that exhaust of the process chamber is substantially stopped, and thereafter an inert gas is supplied into the process chamber in a state that exhaust of the process chamber and supply of the source gas are substantially stopped. | 10-22-2015 |
20150303051 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - Provided is a technique of forming a film containing a first element and a second element on a substrate by performing a cycle a predetermined number of times. The cycle includes: (a) supplying a hydro-based precursor containing the first element and a halogen-based precursor containing the second element into a process chamber accommodating a substrate to confine the hydro-based precursor and the halogen-based precursor in the process chamber; (b) maintaining a state where the hydro-based precursor and the halogen-based precursor are confined in the process chamber; and (c) exhausting the process chamber. | 10-22-2015 |
20150294860 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A substrate processing apparatus in which an improved film quality is obtained is disclosed. A precursor gas supply process of supplying a precursor gas to a process chamber while maintaining a substrate accommodated in the process chamber at a first temperature, a first removal process of removing the precursor gas remaining in the process chamber by supplying an inert gas, which is heated at a second temperature higher than the first temperature, to the process chamber, a reaction gas supply process of supplying a reaction gas to the process chamber, and a second removal process of removing the reaction gas remaining in the process chamber by supplying an inert gas to the process chamber are performed. | 10-15-2015 |
20150294854 | SEMICONDUCTOR DEVICE MANUFACTURING AND PROCESSING METHODS AND APPARATUSES FOR FORMING A FILM - A semiconductor device manufacturing method includes: accommodating a substrate in a processing chamber; and supplying a silicon-based gas and an amine-based gas into the processing chamber that is heated to form a film including silicon and carbon on the substrate. The forming of the film including silicon and carbon includes: supplying the silicon-based gas and the amine-based gas into the processing chamber and confining the silicon-based gas and the amine-based gas in the processing chamber; maintaining a state in which the silicon-based gas and the amine-based gas are confined in the processing chamber, and exhausting an inside of the processing chamber. | 10-15-2015 |
20150292082 | SUBSTRATE PROCESSING APPARATUS, NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM THEREOF AND SEMICONDUCTOR MANUFACTURING METHOD BY EMPLOYING THEREOF - Embodiments of the invention relate to a substrate processing apparatus. In one embodiment, a substrate processing apparatus includes a plurality of process units. The process unit includes a process chamber for processing a substrate, an exhaust conduit connected to the process chamber and an exhaust pump arranged in the path of the exhaust conduit. The substrate processing apparatus further includes a connecting conduit connected to the exhaust conduits of the process units in the upstream of the exhaust pump and a switching unit which switches an exhaust path of the process chamber to the other exhaust pump in the other process unit via the connecting conduit. | 10-15-2015 |
20150287594 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - A method of manufacturing a semiconductor device can enhance controllability of the diameters of grains of a film containing a predetermined element such as a silicon film when the film is formed. The method includes (a) forming a seed layer containing a predetermined element and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including alternately performing supplying a first source gas containing the predetermined element, an alkyl group and a halogen group to the substrate and supplying a second source gas containing the predetermined element and an amino group to the substrate, or by performing supplying the first source gas to the substrate a predetermined number of times; and (b) forming a film containing the predetermined element on the seed layer by supplying a third source gas containing the predetermined element and free of the alkyl group to the substrate. | 10-08-2015 |
20150287588 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - Provided a method including forming a laminated film where a first film and a second film are laminated on a substrate by performing a cycle a predetermined number of times under a condition where a borazine ring structure in a fourth process gas is maintained. The cycle includes: (a) forming the first film by performing a first set a predetermined number of times, wherein the first set includes supplying a first process gas and supplying a second process gas to the substrate; and (b) forming the second film by performing a second set a predetermined number of times, wherein the second set includes supplying a third process gas and supplying the fourth process gas to the substrate. | 10-08-2015 |
20150279712 | SUBSTRATE PROCESSING APPARATUS, METHOD OF PROCESSING SUBSTRATE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The present invention shortens the time needed to decrease the oxygen concentration in a chamber to be filled with an inert gas to a desired concentration. A substrate processing apparatus includes: a processing chamber configured to process a substrate; and a carrying chamber configured to carry the substrate to the processing chamber. The carrying chamber includes: a plurality of wall bodies configured to form a housing of the carrying chamber; a joint at which the plurality of wall bodies are joined; an isolated space creating member configured to cover the joint and thereby create an isolated space separated from the carrying chamber; and an exhaust section configured to purge gas in the isolated space. | 10-01-2015 |
20150279682 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - A halogen element-containing metal material and a nitrogen-containing material are alternately supplied to a process chamber with a flow rate of an inert gas supplied to the process chamber together with the nitrogen-containing material during the supplying of the nitrogen-containing material to the process chamber being more increased than a flow rate of the inert gas supplied to the process chamber together with the metal material during the supplying of the metal material to the process chamber. | 10-01-2015 |
20150279663 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - Provided is a technique of controlling a work function of a metal film. A composite metal nitride film is formed on a substrate present in a process chamber by alternately supplying a first source and a second source to the substrate, wherein the first source contains a first metal element, the second source contains an ethyl ligand and a second metal element that is different from the first metal element, and a bond between the second metal element and a nitrogen element in the composite metal nitride film has crystallinity. | 10-01-2015 |
20150275357 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a method of manufacturing a semiconductor device wherein a cleaning process on the inside of an exhaust buffer chamber may be performed sufficiently and satisfactorily even if gases are exhausted using the exhaust buffer chamber. The method includes: (a) processing a substrate placed on a substrate placing surface in a processing space by supplying gases onto the substrate in the processing space through a side facing the substrate placing surface while exhausting the gases from the processing space using an exhaust buffer chamber including a space surrounding an outer circumference of a side portion of the processing space; and (b) cleaning and inside of the exhaust buffer chamber by supplying a cleaning gas into the exhaust buffer chamber through a cleaning gas supply pipe communicating with the space of the exhaust buffer chamber. | 10-01-2015 |
20150270125 | REACTION TUBE, SUBSTRATE PROCESSING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A structure for constituting a process chamber in which a plurality of substrates is processed by reacting a predetermined precursor gas therein includes an outer tube having a cylindrical shape with an upper end portion closed and a lower end portion opened, and an inner tube, installed within the outer tube, including a first exhaust slit and a second exhaust slit through which the predetermined precursor gas is exhausted, the first exhaust slit located in a substrate arrangement region in which the plurality of substrates are arranged, and the second exhaust slit located in a region lower than the substrate arrangement region. | 09-24-2015 |
20150267296 | SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - The present invention provides technology capable of suppressing a deposition of by-products in a substrate processing apparatus. When a process gas is supplied into a process vessel, an inert gas having a flow rate controlled by a flow rate controller is supplied to a first and second supply pipes through a third supply pipe, the inert gas of the first supply pipe is ejected into the process vessel by a first ejection part and the inert gas of the second supply pipe is ejected toward an inner wall surface by a second ejection part. | 09-24-2015 |
20150262809 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element, oxygen, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times after supplying a nitriding gas to the substrate. The cycle includes performing the following steps in the following order: supplying a carbon-containing gas to the substrate; supplying a predetermined element-containing gas to the substrate; supplying the carbon-containing gas to the substrate; supplying an oxidizing gas to the substrate; and supplying the nitriding gas to the substrate. | 09-17-2015 |
20150256232 | METHOD FOR SELECTION OF RECEIVED TELEGRAM IN TRAIN WIRELESS COMMUNICATIONS SYSTEM - A method for selection of a received telegram in a train wireless communications system including a plurality of wireless base stations situated along the train tracks, for respectively communicating with a higher level device through a wired circuit, and at least one terminal having at least two or more antennas installed in cars of the train moving down the track, during a predetermined transmission interval of a downstream telegram received from a higher level device, the wireless base station twice transmits telegrams that include at least identical content; the terminal, using the plurality of antennas, receives the telegrams transmitted by the wireless base station, selects the received telegram having the best reception from among those received by the plurality of antennas as the received telegram, and transmits a response telegram to the wireless base station, in response to the telegram received from the wireless base station. | 09-10-2015 |
20150255274 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A technique includes forming a film containing a first element, a second element and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first layer containing the first element and carbon by supplying a precursor gas having a chemical bond of the first element and carbon from a first supply part to the substrate in a process chamber, and forming a second layer by supplying a reaction gas containing the second element from a second supply part to the substrate in the process chamber and supplying a plasma-excited inert gas from a third supply part to the substrate in the process chamber to modify the first layer, the third supply part being different from the second supply part. | 09-10-2015 |
20150255269 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device is provided. The method includes treating a surface of an insulating film formed on a substrate by supplying a first gas containing a halogen group to the substrate, and forming a thin film containing a predetermined element on the treated surface of the insulating film by performing a cycle a predetermined number of times. The cycle includes supplying a second gas containing the predetermined element and a halogen group to the substrate, and supplying a third gas to the substrate. | 09-10-2015 |
20150253762 | INTEGRATED MANAGEMENT SYSTEM, MANAGEMENT DEVICE, METHOD OF DISPLAYING INFORMATION FOR SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - An integrated management system including a substrate processing apparatus configured to process a substrate and a management device is provided. The management device includes an accumulation unit configured to accumulate specified information including power consumption information indicating a power consumed in the substrate processing apparatus, gas consumption information indicating a gas consumed in the substrate processing apparatus, or operation information indicating an operation state of the substrate processing apparatus; and a processing display unit configured to acquire predetermined information that meets a predetermined condition from the specified information accumulated in the accumulation unit and calculate at least one among a power consumption consumed in the substrate processing apparatus, an inert gas consumption, and an operation rate of the substrate processing apparatus based on the predetermined information. | 09-10-2015 |
20150252474 | SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - A substrate processing apparatus includes: a process chamber including a source gas supply and a reactive gas supply to process a plurality of substrates in the source gas supply and the reactive gas supply; a substrate placement unit rotating in the process chamber, wherein the plurality of substrates are placed on the substrate placement unit along a rotational direction thereof; a plasma generator to generate plasma in plasma generation chamber installed an upper portion of the reactive gas supply; a coil wound along an outer circumference of the plasma generation chamber, a portion of which adjacent to a sidewall of the plasma generation chamber has a constant curvature; a reactive gas supply system to supply a reactive gas to the reactive gas supply via the plasma generation chamber through a ceiling of the plasma generation chamber; and a source gas supply system to supply a source gas. | 09-10-2015 |
20150243507 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The method of manufacturing a semiconductor device in accordance with the present invention provides a metal-containing film capable of adjusting a work function. The including: (a) alternately supplying a first source containing a first metal element and a halogen element and a second source containing a second metal element different from the first metal element and at least one selected from the group consisting of a ligand of a methyl group, a ligand of an ethyl group and a ligand of a cyclopenta-based group onto a substrate in a process chamber to form a composite metal-containing film on the substrate; and (b) alternately supplying a third source containing a third metal element and a fourth source containing nitrogen onto the substrate in the process chamber to form a metal nitride film on the composite metal-containing film. | 08-27-2015 |
20150243499 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A technique includes forming a film containing a first element, a second element, and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first solid layer containing the first element and carbon, and having a thickness of more than one atomic layer and equal to or less than several atomic layers, by supplying a precursor gas having a chemical bond of the first element and carbon to the substrate and confining the precursor gas within the process chamber, under a condition in which the precursor gas is autolyzed and at least a part of the chemical bond of the first element and carbon is maintained without being broken; and forming a second solid layer by supplying a reaction gas containing the second element to the substrate to modify the first solid layer. | 08-27-2015 |
20150232986 | CLEANING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A cleaning method includes performing a first cleaning process of supplying a fluorine-based gas from a first nozzle heated to a first temperature and a nitrogen oxide-based gas from a second nozzle heated to a first temperature into a process chamber heated to the first temperature in order to remove deposits including a film deposited on surfaces of members in the process chamber by a thermochemical reaction, changing an internal temperature of the process chamber to a second temperature higher than the first temperature, and performing a second cleaning process of supplying a fluorine-based gas from the first nozzle heated to the second temperature into the process chamber heated to the second temperature in order to remove substances remaining on the surfaces of the members in the process chamber after removing the deposits by the thermochemical reaction and to remove deposits deposited in the first nozzle by the thermochemical reaction. | 08-20-2015 |
20150228476 | BATCH-TYPE REMOTE PLASMA PROCESSING APPARATUS - A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes. | 08-13-2015 |
20150228474 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device is disclosed. The method includes forming a film on a substrate by performing a cycle a predetermined number of times, wherein the cycle includes non-simultaneously performing: supplying a precursor gas to the substrate in a process chamber; exhausting the precursor gas in the process chamber through an exhaust system; confining a reaction gas, which differs in chemical structure from the precursor gas, in the process chamber by supplying the reaction gas to the substrate in the process chamber while the exhaust system is closed; and exhausting the reaction gas in the process chamber through the exhaust system while the exhaust system is opened. | 08-13-2015 |
20150225852 | METHOD OF FORMING METAL-CONTAINING FILM - Provided are a semiconductor device manufacturing method and a substrate processing apparatus that are capable of increasing a work function of a film to be formed, in comparison with a related art. The method comprises: (a) supplying a metal-containing gas simultaneously with one selected from the group consisting of an oxygen-containing gas, a halogen-containing gas and combinations thereof into a processing chamber accommodating the substrate; and (b) supplying a nitrogen-containing gas with one of the oxygen-containing gas, the halogen-containing gas and the combinations thereof into the processing chamber. | 08-13-2015 |
20150221532 | SUBSTRATE PROCESSING APPARATUS, HEATING APPARATUS, CEILING HEAT INSULATOR, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A ceiling heat insulator installed above a side wall heat insulator of a heating apparatus for a substrate processing apparatus for processing a substrate is provided. The ceiling heat insulator includes a gas-flow path installed therein to allow a cooling gas to pass therethrough so that the ceiling heat insulator has a solid cross-sectional area in an outer edge side of the ceiling heat insulator that is smaller than that in a center side of the ceiling heat insulator. | 08-06-2015 |
20150221503 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device is disclosed. The method includes (a) loading a substrate into a process chamber; (b) processing the substrate by supplying a process gas into the process chamber via a shower head disposed above the process chamber and including a buffer chamber; (c) unloading the substrate from the process chamber; and (d) cleaning the buffer chamber and the process chamber after performing the step (c), wherein the step (d) comprises: (d-1) cleaning the buffer chamber by a plasma generation from a cleaning gas in the buffer chamber by a plasma generation unit including a plasma generation region switching unit; and (d-2) cleaning the process chamber by switching the plasma generation from the cleaning gas in the buffer chamber to a plasma generation from the cleaning gas in the process chamber by the plasma generation region switching unit. | 08-06-2015 |
20150214045 | Semiconductor Device Manufacturing Method and Substrate Processing Apparatus - Provided is a semiconductor device manufacturing method including: (a) supplying a source gas containing a first element and chlorine to a substrate accommodated in a processing chamber to form an adsorption layer of the source gas on the substrate; (b) supplying a chlorine-containing gas having a composition different from that of the source gas to the substrate while supplying the sources gas before an adsorption of the source gas to the substrate is saturated to suppress the adsorption of the source gas to the substrate; (c) removing the source gas and the chlorine-containing gas remaining on the substrate; (d) supplying a modifying gas including a second element to the substrate to form a layer including the first element and the second element on the substrate by modifying the adsorption layer of the source gas; and (e) removing the modifying gas remaining on the substrate. | 07-30-2015 |
20150214044 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Generation of adhered materials in a space over a gas guide of a shower head is inhibited. A substrate processing apparatus includes a process chamber; a buffer chamber including a dispersion unit; a process gas supply hole installed in a ceiling portion of the buffer chamber; an inert gas supply hole installed in the ceiling portion; a gas guide disposed in a gap between the dispersion unit and the ceiling portion, the gas guide including a base end portion disposed at a side of the process gas supply hole, a leading end portion disposed closer to the inert gas supply hole than to the process gas supply hole, and a plate portion connecting the base end portion and the leading end portion; a process chamber exhaust unit; and a control unit. | 07-30-2015 |
20150214042 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - Provided is a method of manufacturing a semiconductor device. The method includes: (a) forming an oxide film having a predetermined thickness on a substrate by alternately repeating: (a-1) forming a layer containing a predetermined element on the substrate by supplying a source gas containing the predetermined element into a process vessel accommodating the substrate and exhausting the source gas from the process vessel; and (a-2) changing the layer containing the predetermined element into an oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas into the process vessel, wherein inside of the process vessel is under a heated atmosphere having a pressure lower than an atmospheric pressure; and exhausting the oxygen-containing gas and the hydrogen-containing gas from the process vessel; and (b) modifying the oxide film formed on the substrate by supplying the oxygen-containing gas and the hydrogen-containing gas into the process vessel, wherein the inside of the process vessel is under the heated atmosphere having the pressure lower than the atmospheric pressure, and exhausting the oxygen-containing gas and the hydrogen-containing gas from the process vessel. | 07-30-2015 |
20150214030 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - A method of manufacturing a semiconductor device, includes: forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying a raw material gas to a substrate in a process chamber, exhausting the raw material gas remaining in the process chamber through an exhaust line, supplying an amine-based gas; and exhausting the amine-based gas through the exhaust line with the supply of the amine-based gas stopped. A degree of valve opening of an exhaust valve disposed in the exhaust line is changed in multiple steps in the process of exhausting the amine-based gas. | 07-30-2015 |
20150214028 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - Provided is a method of manufacturing a semiconductor device. The method includes: (a) forming an oxide film having a predetermined thickness on a substrate by alternately repeating: (a-1) forming a layer containing a predetermined element on the substrate by supplying a source gas containing the predetermined element into a process vessel accommodating the substrate and exhausting the source gas from the process vessel; and (a-2) changing the layer containing the predetermined element into an oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas into the process vessel, wherein inside of the process vessel is under a heated atmosphere having a pressure lower than an atmospheric pressure; and exhausting the oxygen-containing gas and the hydrogen-containing gas from the process vessel; and (b) modifying the oxide film formed on the substrate by supplying the oxygen-containing gas and the hydrogen-containing gas into the process vessel, wherein the inside of the process vessel is under the heated atmosphere having the pressure lower than the atmospheric pressure, and exhausting the oxygen-containing gas and the hydrogen-containing gas from the process vessel. | 07-30-2015 |
20150214025 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - An oxide film capable of suppressing reflection of a lens is formed under a low temperature. A method of manufacturing a semiconductor device includes forming a metal-containing oxide film on a substrate by performing a cycle a predetermined number of times, the cycle comprising: (a) supplying a metal-containing source to the substrate; (b) supplying an oxidizing source to the substrate; and (c) supplying a catalyst to the substrate. | 07-30-2015 |
20150206736 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - The uniformity of the thickness of the film of a film to be formed on a substrate within a plane of the substrate can be improved. A method of manufacturing a semiconductor includes performing a cycle, a predetermined number of times, to form a film on a substrate, the cycle including non-simultaneously performing: (a) supplying a source gas to the substrate in a process chamber; (b) removing the source gas from the process chamber; (c) supplying a reactive gas having a chemical structure different from that of the source gas to the substrate in the process chamber; and (d) removing the reactive gas from the process chamber, wherein the (d) includes alternately repeating: (d-1) exhausting an inside of the process chamber to depressurize the inside of the process chamber; and (d-2) purging the inside of the process chamber using an inert gas. | 07-23-2015 |
20150200104 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS AND COMPUTER-READABLE RECORDING MEDIUM - A method of manufacturing a semiconductor device, includes: alternately performing (i) a first step of alternately supplying a first raw material containing a first metal element and a halogen element and a second raw material containing a second metal element and carbon to a substrate by a first predetermined number of times, and (ii) a second step of supplying a nitridation raw material to the substrate, by a second predetermined number of times, wherein alternating the first and second steps forms a metal carbonitride film containing the first metal element having a predetermined thickness on the substrate. | 07-16-2015 |
20150200103 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS AND COMPUTER-READABLE RECORDING MEDIUM - A method of manufacturing a semiconductor device, includes: alternately performing (i) a first step of alternately supplying a first raw material containing a first metal element and a halogen element and a second raw material containing a second metal element and carbon to a substrate by a first predetermined number of times, and (ii) a second step of supplying a nitridation raw material to the substrate, by a second predetermined number of times, wherein alternating the first and second steps forms a metal carbonitride film containing the first metal element having a predetermined thickness on the substrate. | 07-16-2015 |
20150200102 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS AND COMPUTER-READABLE RECORDING MEDIUM - A method of manufacturing a semiconductor device, includes: alternately performing (i) a first step of alternately supplying a first raw material containing a first metal element and a halogen element and a second raw material containing a second metal element and carbon to a substrate by a first predetermined number of times, and (ii) a second step of supplying a nitridation raw material to the substrate, by a second predetermined number of times, wherein alternating the first and second steps forms a metal carbonitride film containing the first metal element having a predetermined thickness on the substrate. | 07-16-2015 |
20150200085 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device, including forming a laminated film on a substrate by performing a cycle a first predetermined number of times. The cycle includes forming a first film which contains a predetermined element, boron, and nitrogen, and forming a second film which contains boron and nitrogen. A composition ratio of boron to nitrogen in the second film is different from that in the first film. The first film and the second film are laminated to form the laminated film. | 07-16-2015 |
20150200081 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - Provided is a technique capable of suppressing a product substrate from being contaminated with a contaminant generated in a process chamber. The method includes (a) processing a substrate supported by a first substrate support by generating plasma in a first plasma generating region in a process chamber; and (b) removing a metal substance in the process chamber by generating plasma in the first plasma generating region and a second plasma generating region disposed between the first substrate support and a back surface of a substrate supported by a second substrate support. | 07-16-2015 |
20150194304 | SUBSTRATE PROCESSING APPARATUS, NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - There is provided a substrate processing apparatus that alternately supplies a first processing gas and a second processing gas in plasma state to a processing container and processes a substrate. The apparatus includes a first gas supply system configured to supply the first processing gas, a second gas supply system configured to supply the second processing gas, a plasma unit arranged at an upstream side of the processing container to plasmatize at least the second processing gas, and a controller configured to control the first gas supply system and the second gas supply system to alternately supply the first processing gas and the second processing gas and control the plasma unit to apply an electric power to plasmatize the second processing gas before a supply of the second processing gas starts. | 07-09-2015 |
20150194302 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus capable of forming an oxide film on a substrate by forming a layer on the substrate by supplying a source gas into a process vessel accommodating the substrate via the first nozzle, and simultaneously supplying an oxygen-containing gas through a second nozzle and a hydrogen-containing gas through a first nozzle into the process vessel having an inside pressure thereof lower than atmospheric pressure; mixing and reacting the oxygen-containing gas with the hydrogen-containing gas in a non-plasma atmosphere within the process vessel to generate atomic oxygen; and oxidizing the layer with the atomic oxygen to change the layer into an oxide layer is disclosed. | 07-09-2015 |
20150187652 | METHOD FOR PRODUCING A COMPOSITE WAFER AND A METHOD FOR PRODUCING A SEMICONDUCTOR CRYSTAL LAYER FORMING WAFER - A method for producing a composite wafer by using a forming wafer having a monocrystal layer, the method comprising:
| 07-02-2015 |
20150187611 | SUBSTRATE PROCESSING SYSTEM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - A substrate processing system includes a plurality of processing chambers accommodating substrates, a processing gas supply system configured to supply a processing gas sequentially into the plurality of processing chambers, a reactive gas supply system configured to supply an activated reactive gas sequentially into the plurality of processing chambers, a buffer tank installed at the processing gas supply system, and a control unit configured to control the processing gas supply system and the reactive gas supply system such that a time period of supplying the reactive gas into one of the plurality of processing chambers is equal to a sum of a time period of supplying the processing gas into the one of the plurality of processing chambers and a time period of supplying the processing gas into the buffer tank, and the processing gas and the reactive gas are alternately supplied into the plurality of processing chambers. | 07-02-2015 |
20150187610 | SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - A substrate processing apparatus includes a common pipe connected to a process container wherethrough a first and second process gases flow; a buffer unit connected to an upstream side of the common pipe and having a width greater than a diameter of the common pipe; a first supply pipe wherethrough the first process gas flows, connected to a first surface of the buffer unit where the common pipe is connected or a second surface of the buffer unit opposite to the first surface; and a second supply pipe wherethrough the second process gas flows, connected to the first or second surface. Each of the first and second supply pipes is installed outer than the common pipe, and a distance between the first and second surfaces is shorter than a distance between a center axis of the common pipe and that of the first or second supply pipe. | 07-02-2015 |
20150187567 | SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - A substrate processing apparatus processes a substrate by supplying a gas into a processing space. The apparatus includes a buffer space wherein the gas is dispersed, the buffer space disposed at an upstream side of the processing space; a transfer space where the substrate passes when transferred to the processing space; a first, a second and a third exhaust pipe connected to the transfer space, the buffer space and the processing space, respectively; a fourth exhaust pipe connected to downstream sides of the first exhaust pipe, the second exhaust pipe and the third exhaust pipe; a first vacuum pump disposed at the first exhaust pipe; a second vacuum pump disposed at the fourth exhaust pipe; a first valve disposed at the first exhaust pipe at a downstream side of the first vacuum pump; and a second and a third valve disposed at the second and the third exhaust pipe, respectively. | 07-02-2015 |
20150187559 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device includes forming a laminated film on a substrate by performing a cycle a predetermined number of times. The cycle includes forming a first film which contains a predetermined element, boron, and nitrogen and which does not contain a borazine ring skeleton, and forming a second film which contains the predetermined element and a borazine ring skeleton. The first film and the second film are laminated to form the laminated film. | 07-02-2015 |
20150184301 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a substrate processing apparatus capable of suppressing the difference between temperatures of a susceptor and the shower head. The substrate processing apparatus includes a process chamber configured to process a substrate; a substrate placement device disposed in the process chamber, the substrate placement device comprising a substrate placement surface where the substrate is placed and a first heater; a shower head disposed opposite to the substrate placement surface, the shower head comprising a second heater and an opposing surface facing the substrate placement surface; a processing gas supply system configured to supply a processing gas for processing the substrate placed on the substrate placement surface into the process chamber via the shower head; an exhaust system configured to evacuate an inner atmosphere of the process chamber; and a controller configured to control outputs of the first heater and the second heater. | 07-02-2015 |
20150179427 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device includes performing a cycle a predetermined number of times, the cycle including supplying a first precursor containing a specific element and a halogen group to form a first layer and supplying a second precursor containing the specific element and an amino group to modify the first layer into a second layer. A temperature of the substrate is set such that a ligand containing the amino group is separated from the specific element in the second precursor, the separated ligand reacts with the halogen group in the first layer to remove the halogen group from the first layer, the separated ligand is prevented from being bonded to the specific element in the first layer, and the specific element from which the ligand is separated in the second precursor is bonded to the specific element in the first layer. | 06-25-2015 |
20150161773 | IMAGE PROCESSING DEVICE AND IMAGE PROCESSING METHOD - Provided is an image processing apparatus that can reduce degradation in image quality due to heat haze and the like. An input image memory | 06-11-2015 |
20150156775 | WIRELESS COMMUNICATION SYSTEM, FREQUENCY CHANNEL SHARING METHOD, AND NETWORK CONTROLLER DEVICE - When a frequency channel is shared between adjacent cells in a wireless communication system of time-division duplex operation utilizing a white space, more efficient communications can be achieved. In a wireless communication system of time-division duplex operation utilizing a white space, which is a temporally and spatially unused frequency, to perform wireless communications and having frames in which downstream and upstream subframes are alternately arranged on the time axis, a network controller calculates a common split position, which is to be used in synchronization between base stations sharing a frequency, from collected information in response to a frequency sharing trigger and synchronizes the determined split position between the base stations, thereby allowing the frequency channel to be shared. | 06-04-2015 |
20150155201 | SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - Provided is a substrate processing apparatus including a substrate processing chamber configured to process a substrate; a gas supply unit configured to alternately supply a first processing gas and a second processing gas to the substrate when processing the substrate; a substrate support unit including a support mechanism configured to support a portion of a back side of the substrate and a support unit configured to support the support mechanism; a heating unit configured to heat the substrate from the back side thereof; a standby chamber configured to accommodate the substrate support unit in standby position; and a control unit configured to control at least one of the gas supply unit and a gas exhaust unit in a manner that an inner pressure of the substrate processing chamber is higher than that of the standby chamber. | 06-04-2015 |
20150155165 | METHOD OF PRODUCING COMPOSITE WAFER AND COMPOSITE WAFER - A method of producing a composite wafer including a semiconductor crystal layer, includes forming a sacrificial layer and the semiconductor crystal layer above a semiconductor crystal layer forming wafer in the stated order, etching the semiconductor crystal layer to partially expose the sacrificial layer and dividing the semiconductor crystal layer into a plurality of divided pieces, bonding the semiconductor crystal layer forming wafer and a transfer target wafer made of an inorganic material in such a manner that a first surface of the semiconductor crystal layer forming wafer faces and comes into contact with a second surface of the transfer target wafer, and etching the sacrificial layer to separate the transfer target wafer and the semiconductor crystal layer forming wafer from each other with the semiconductor crystal layer being left on the transfer target wafer. | 06-04-2015 |
20150152554 | SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER READABLE RECORDING MEDIUM - A substrate processing apparatus capable of suppressing generation of by-products in a buffer space in even a single-wafer apparatus using the buffer space, and a method of manufacturing a semiconductor device are provided. The substrate processing apparatus includes a process chamber including a placement unit having a placing surface whereon a substrate is placed, a shower head including a buffer chamber and installed at upstream side of the process chamber, a gas supply system configured to alternately supply at least two types of gases into the process chamber via the buffer chamber of the shower head, and a heating unit configured to heat the buffer chamber to a first temperature and the process chamber to a second temperature which is higher than the first temperature while the at least two types of gases are supplied via the gas supply system. | 06-04-2015 |
20150148935 | SUBSTRATE PROCESSING SYSTEM, SUBSTRATE PROCESSING APPARATUS, DATA PROCESSING METHOD, AND STORAGE MEDIUM - A substrate processing system includes a substrate processing apparatus for generating apparatus data on substrate processing and a management apparatus connected to at least one substrate processing apparatus via a network for receiving and storing the apparatus data periodically reported from the substrate processing apparatus. The substrate processing apparatus includes a storage unit for storing the apparatus data a report cycle or the number of reports of the apparatus data to the management apparatus, and a degree of importance of the apparatus data in association with a data type of the apparatus data, and a control unit for, when changing a report cycle of the apparatus data, determining a data type of the report cycle of which is to be changed based on the report cycle or the number of reports and the degree of importance per data type stored in the storage unit. | 05-28-2015 |
20150148091 | WIRELESS COMMUNICATION SYSTEM, TRANSMISSION POWER CONTROL METHOD, AND NETWORK CONTROL APPARATUS - The objective of the invention is to improve the communication performance of a secondary system within such a range that does not affect a primary system. A wireless communication system comprises: a primary system that can use a given frequency on a priority basis; secondary wireless communication systems each of which is operated with the same frequency; and a network control apparatus that controls the secondary wireless communication systems. The network control apparatus comprises: a primary system information acquiring unit that acquires information of the primary system; a secondary system information acquiring unit that acquires communication quality information of the secondary wireless communication systems; and an optimum computing unit that calculates, on the basis of the primary and secondary system information acquiring units, the transmission powers of a plurality of base stations of the secondary wireless communication systems. | 05-28-2015 |
20150147873 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND NON-TRANSITORY COMPUTER-READABLE STORAGE MEDIUM - Provided is a method of manufacturing a semiconductor device. The method includes: carrying a substrate, which has a Ge-containing film on at least a portion of a surface thereof, into a process chamber; heating an inside of the process chamber, into which the substrate is carried, to a first process temperature; and terminating a surface of the Ge-containing film, which is exposed at a portion of the surface of the substrate, by Si by supplying at least a Si-containing gas to the inside of the process chamber heated to the first process temperature. | 05-28-2015 |
20150140835 | SUBSTRATE PROCESSING APPARATUS, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM - A substrate processing apparatus is disclosed. The substrate processing apparatus includes a process chamber configured to accommodate a substrate; a gas supply unit configured to supply a process gas into the process chamber; a lid member configured to block an end portion opening of the process chamber; an end portion heating unit installed around a side wall of an end portion of the process chamber; and a thermal conductor installed on a surface of the lid member in an inner side of the process chamber, and configured to be heated by the end portion heating unit. | 05-21-2015 |
20150132972 | SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - A substrate processing apparatus includes: a reaction tube configured to accommodate a plurality of substrates and to be supplied with a gas generated by vaporizing or turning into mist a solution containing a reactant in a solvent; a lid configured to close the reaction tube; a first heater configured to heat the plurality of substrates; a thermal conductor placed on the lid on an upper surface thereof; a second heater placed outside the reaction tube around a side thereof, the second heater being configured to heat the gas flowing near the lid; and a heating element placed on the lid on a lower surface thereof, the heating element configured to heat the lid. | 05-14-2015 |
20150126043 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device includes forming a thin film containing a specific element, oxygen, carbon, and nitrogen by performing a cycle a predetermined number of times. The cycle includes supplying a specific element-containing gas, supplying a carbon-containing gas, supplying an oxidizing gas, and supplying a nitriding gas. The act of supplying the nitriding gas is performed before the act of supplying the specific element-containing gas, and the act of supplying the carbon-containing gas and the act of supplying the oxidizing gas are not performed until the act of supplying the specific element-containing gas is performed. | 05-07-2015 |
20150112970 | SIMILAR IMAGE SEARCH SYSTEM - Disclosed is a similar facial image search system which is less susceptible to bias in search results even when there is a difference in the angle from which a face is photographed. The present invention is provided with: a means for detecting a first face from the inputted search subject image; a means for calculating and a means for recording a feature value of the detected first face; a means for detecting a second face from an inputted key image used for search; a means for calculating the face angle of the second face; a means for determining a synthesis pattern from the calculated face angle; a means for generating a synthetic face image according to the determined synthesis pattern; a means for calculating the feature value of the second face using the generated synthetic face image; a means for searching a database using a plurality of calculated face feature values as a query; and a means for integrating the plurality of the retrieved search results. | 04-23-2015 |
20150111395 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - According to the present disclosure, a film containing a predetermined element, carbon and nitrogen is formed with high controllability of a composition thereof. A method of manufacturing a semiconductor device includes forming a film containing a predetermined element, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a first processing gas containing the predetermined element and a halogen element to the substrate, supplying a second processing gas composed of three elements of carbon, nitrogen and hydrogen to the substrate, and supplying a third processing gas containing carbon to the substrate. | 04-23-2015 |
20150111378 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - [PROBLEMS TO BE SOLVED] | 04-23-2015 |
20150101755 | SUBSTRATE PROCESSING APPARATUS - An insulating film having features such as a low dielectric constant, a low etching rate and a high insulating property is formed. An oxycarbonitride film is formed on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a gas containing an element to the substrate; (b) supplying a carbon-containing gas to the substrate; (c) supplying a nitrogen-containing gas to the substrate; and (d) supplying an oxygen-containing gas to the substrate. | 04-16-2015 |
20150099373 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR PROCESSING SUBSTRATE, SUBSTRATE PROCESSING DEVICE AND RECORDING MEDIUM - In order to extend the cycle of gas cleaning for a film-forming device, a method for manufacturing a semiconductor device includes: a substrate carry-in process for carrying a substrate into a processing chamber; a film forming process for laminating at least two types of films on the substrate in the processing chamber; a substrate carry-out process for carrying the film laminated substrate out from the processing chamber; an etching process for supplying an etching gas into the processing chamber while the substrate is not in the processing chamber after the substrate carry-out process. The etching process includes a first cleaning process for supplying a fluorine-containing gas activated by plasma excitation into the processing chamber as an etching gas; and a second cleaning process for supplying a fluorine-containing gas activated by heat into the processing chamber as an etching gas. | 04-09-2015 |
20150096494 | SUBSTRATE PROCESSING APPARATUS, METHOD OF CONTROLLING SUBSTRATE PROCESSING APPARATUS, METHOD OF MAINTAINING SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A substrate processing apparatus includes: an operation unit, which is provided with a storage unit that stores a plurality of recipes including a recipe for processing a member that constitutes the inside of a reactor in which substrate processing is performed, and a recipe for processing an exhaust pipe through which a gas released from the inside of the reactor flows, the operation unit further being provided with a display unit that displays a setting condition for executing the recipes on an operation screen; and a control unit that executes the recipe that meets the setting condition. The operation unit includes a recipe control unit, which controls, based on the setting condition, execution of the recipe for processing the member constituting the inside of the reactor in which the substrate processing is performed, and the recipe for processing the exhaust pipe, among the recipes stored in the storage unit. | 04-09-2015 |
20150093913 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device includes supplying a precursor gas to a substrate; supplying a reaction gas to a plasma generation region; supplying high frequency power to the plasma generation region; and generating plasma of the reaction gas by adjusting a pressure of the plasma generation region to a first pressure before the reaction gas is supplied and adjusting the pressure of the plasma generation region to a second pressure lower than the first pressure while the reaction gas and the high frequency power are supplied. | 04-02-2015 |
20150093911 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - A method of manufacturing a semiconductor device includes: (a) forming a first film containing a metal element on a substrate by performing a cycle a predetermined number of times, the cycle including: (a-1) supplying a first precursor gas being a fluorine-free inorganic gas containing the metal element to the substrate; and (a-2) supplying a first reactant gas having reducibility to the substrate; (b) forming a second film containing the metal element on the first film by performing a cycle a predetermined number of times, the cycle including: (b-1) supplying a second precursor gas containing the metal element and fluorine to the substrate; and (b-2) supplying a second reactant gas having reducibility to the substrate; and (c) forming a film containing the metal element and obtained by the first film and the second film being laminated on the substrate by performing the (a) and (b). | 04-02-2015 |
20150093909 | Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device and Method of Processing Substrate - A substrate processing apparatus including a vertical reaction container; an insulating wall formed of an insulating material and including a reaction container accommodation chamber for accommodating the reaction container therein; a heater installed in an inner wall of the reception container reception chamber on the insulating wall; an air circulation channel installed vertically in a sidewall of the insulating wall; a blower for distributing air upward or downward in the air circulation channel; intake valves for communicating the air circulation channel with the air; and exhaust valves for communicating the air circulation channel with an equipment exhaust system. In a temperature elevating process and a temperature lowering process, the intake valves and the exhaust valves are switched. | 04-02-2015 |
20150089924 | EXHAUST GAS PROCESSING DEVICE, EXHAUST GAS PROCESSING SYSTEM, METHOD FOR CONTROLLING EXHAUST GAS PROCESSING SYSTEM, CONTROL PROGRAM, AND CYLINDRICAL TUBE - An exhaust gas processing system includes a cylindrical tube through which an exhaust gas of an engine passes, a sensor configured to detect information regarding the exhaust gas discharged from the engine, a coil antenna provided on an outer periphery of the cylindrical tube and connected to a high-frequency power supply, and a control unit configured to control output power of the high-frequency power supply. The control unit controls output power of the high-frequency power supply based on the information detected by the sensor. | 04-02-2015 |
20150087160 | SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM - A substrate processing apparatus includes: a processing gas supply pipe configured to supply a processing gas into a processing chamber; a substrate mounting table that is installed in the processing chamber and on which a substrate to be processed is mounted; a driving unit configured to drive the substrate mounting table to move the substrate mounted on the substrate mounting table; a first plasma generating unit configured to generate plasma of the processing gas supplied into the processing chamber with a first density; and a second plasma generating unit that is installed adjacent to the first plasma generating unit in a traveling direction of the substrate and configured to generate plasma of the processing gas supplied into the processing chamber with a second density lower than the first density. | 03-26-2015 |
20150087159 | SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER READABLE RECORDING MEDIUM - Provided is a technique of efficiently purging source gases remaining on a substrate and improving in-plane uniformity of a substrate. A method of processing a substrate includes forming a thin film on a substrate accommodated in a process chamber by (a) supplying a source gas into the process chamber, and (b) supplying an inert gas into the process chamber while alternately increasing and decreasing a flow rate of the inert gas supplied into the process chamber and exhausting the source gas and the inert gas from the process chamber. | 03-26-2015 |
20150072537 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device, includes: forming a thin film containing silicon, oxygen and carbon or a thin film containing silicon, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas serving as a silicon source and a carbon source or a precursor gas serving as a silicon source but no carbon source, and a first catalyst gas to the substrate; supplying an oxidizing gas and a second catalyst gas to the substrate; and supplying a modifying gas containing at least one selected from the group consisting of carbon and nitrogen to the substrate | 03-12-2015 |
20150064908 | SUBSTRATE PROCESSING APPARATUS, METHOD FOR PROCESSING SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a substrate processing apparatus, including: a first gas supply system to supply raw material gas of a film being deposited in at least a portion of the surface of the substrate, and first etching gas which removes the deposited film, from a first gas supply nozzle to the processing chamber; a second gas supply system to supply second etching gas, which removes the deposited film, from a second gas supply nozzle to the processing chamber; and a control device to control the first and second gas supply systems such that the raw material gas is supplied from the first gas supply nozzle and the second etching gas is supplied from the second gas supply nozzle while the substrate is in the processing chamber, and the first etching gas is supplied from the first gas supply nozzle while the substrate is not in the processing chamber. | 03-05-2015 |
20150062335 | RADIO COMMUNICATION APPARATUS, RADIO COMMUNICATION METHOD, AND RADIO COMMUNICATION SYSTEM - A radio communication apparatus includes a radio transmitting/receiving unit having a directional antenna and a storage unit storing reference image data and captured image data obtained by an imaging unit. The imaging unit has an optical axis oriented in the same direction as the radio wave direction of the directional antenna and captures an image related to a line of sight of the other opposed radio communication apparatus. The radio communication apparatus further includes an image processing unit comparing the reference image data with the captured image data and a control unit detecting, from the comparison result, and informing that an obstacle is traveling toward the aforementioned radio wave direction. | 03-05-2015 |
20150050818 | SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE PRODUCING METHOD - Disclosed is a substrate processing apparatus, including: a processing chamber for processing a substrate; a substrate rotating mechanism for rotating the substrate; a gas supply unit for supplying gas to the substrate, at least two kinds of gases A and B being alternately supplied a plurality of times to form a desired film on the substrate; and a controller for controlling a rotation period of the substrate or a gas supply period defined as a time period between an instant when the gas A is made to flow and an instant when the gas A is made to flow next time such that the rotation period and the gas supply period are not brought into synchronization with each other at least while the alternate gas supply is carried out predetermined times. | 02-19-2015 |
20150050815 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING METHOD, AND SUBSTRATE PROCESSING APPARATUS - Provided is a semiconductor device manufacturing method which has: a step wherein a processing substrate to be processed is placed on a substrate mounting member that is provided in a processing chamber having a plurality of gas supply regions; a film-forming step wherein a processing gas is supplied to the processing chamber, and the substrate is processed; a step wherein the substrate is carried out from the processing chamber; and a cleaning step wherein the density of the cleaning gas is controlled, while controlling cleaning gas quantities in the gas supply regions, respectively, in a state wherein the substrate is not placed in the processing chamber. | 02-19-2015 |
20150044881 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - According to the present disclosure, a film containing carbon added at a high concentration is formed with high controllability. A method of manufacturing a semiconductor device includes forming a film containing silicon, carbon and a predetermined element on a substrate by performing a cycle a predetermined number of times. The predetermined element is one of nitrogen and oxygen. The cycle includes supplying a precursor gas containing at least two silicon atoms per one molecule, carbon and a halogen element and having an Si—C bonding to the substrate, and supplying a modifying gas containing the predetermined element to the substrate. | 02-12-2015 |
20150044880 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS, AND PROGRAM - A method of manufacturing a semiconductor device is provided, which enables the film quality to be improved when the film is formed on a substrate at a low temperature, thus forming fine patterns. The method of manufacturing a semiconductor device includes: forming the film on a substrate by alternately supplying at least a source gas and a reactive gas to the substrate while maintaining the substrate at a first temperature by heating; and modifying the film by supplying a modification gas excited by plasma to the substrate with the film formed thereon while naturally cooling the substrate with the film formed thereon to a second temperature without heating the substrate, the second temperature being lower than the first temperature. | 02-12-2015 |
20150039116 | SUBSTRATE PROCESSING SYSTEM, MANAGEMENT DEVICE, AND DISPLAY METHOD - A substrate processing system includes a substrate processing apparatus configured to process a substrate, and a management device configured to display specified information transmitted from the substrate processing apparatus on a display unit. The substrate processing apparatus includes a processing environment measuring unit configured to measure information on a substrate processing environment according to time and a trouble information notifying unit configured to notify information on a trouble of the substrate processing apparatus. The management device includes a storage unit configured to store measurement information measured by the processing environment measuring unit and notification information notified by the trouble information notifying unit. The display unit is configured to display the measurement information and the notification information which are stored in the storage unit and correlated with each other. | 02-05-2015 |
20150031216 | CLEANING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - There is provided a method of cleaning an inside of a process chamber, which is formed by a reaction tube and a manifold configured to support the reaction tube and installed under a heater, after forming a stacked film of oxide and nitride films on a substrate in the process chamber by alternately performing forming the oxide film on the substrate and forming the nitride film thereon. The method includes supplying a hydrogen-free fluorine-based gas from a first nozzle, which is installed in the manifold to extend upward from the manifold to an inside of the reaction tube, to an inner wall of the reaction tube; and supplying a hydrogen fluoride gas from a second nozzle, which is installed in the manifold, to an inner wall of the manifold. | 01-29-2015 |
20140370692 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - Provided is a method of manufacturing a semiconductor device, which is capable of increasing the controllability of the concentration of carbon in a film by increasing the yield when a boron carbonitride film or a boron nitride film is formed. The method includes forming a film containing boron, carbon and nitrogen or a film containing boron and nitrogen on the substrate by performing, a predetermined number of times, a cycle including supplying a source gas consisting of boron and a halogen element to a substrate and supplying a reactive gas consisting of carbon, nitrogen and hydrogen to the substrate. | 12-18-2014 |
20140370628 | SUBSTRATE PROCESSING APPARATUS, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING METHOD, AND RECORDING MEDIUM - According to the present disclosure, it is possible to prevent particles from being generated and to improve substrate processing quality. A substrate processing apparatus includes cassette mounting unit on which process substrate cassette and dummy substrate cassette are mounted, the process substrate cassette being configured to accommodate a plurality of process substrates, and the dummy substrate cassette being configured to accommodate a plurality of dummy substrates, process chamber configured to process the process substrates and the dummy substrates, substrate support unit installed within the process chamber and provided with a plurality of substrate mounting portions where the process substrates and the dummy substrates are mounted, transfer unit configured to transfer the process substrates and the dummy substrates between the cassette mounting unit and the process chamber, and control unit configured to control substrate processing and to transfer processing of the process substrates and the dummy substrates. | 12-18-2014 |
20140357058 | SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - There is provided a substrate processing apparatus including: a process chamber configured to accommodate and process a plurality of substrates arranged with intervals therebetween; a first nozzle extending along a stacking direction of the substrates and configured to supply a hydrogen-containing gas into the process chamber; and a second nozzle extending along the stacking direction of the substrates and configured to supply an oxygen-containing gas into the process chamber, wherein the first nozzle includes a plurality of first gas supply holes disposed in a region extending from an upper portion to a lower portion of the first nozzle corresponding to a substrate arrangement region where the substrates are arranged, and the second nozzle includes a plurality of second gas supply holes disposed at an upper portion and a lower portion of the second nozzle to correspond to upper substrates and lower substrates of the substrates. | 12-04-2014 |
20140348124 | WIRELESS COMMUNICATION SYSTEM - In a wireless communication system, an APM provides sequential numbers to channels formed by dividing a specific frequency band, selects the channels in bit-reversed order of the numbers to divide the channels in frequency groups, creates a small hopping table for each frequency group, and generates a hopping table using the plurality of small hopping tables, and an AP performs channel access to a STA by frequency hopping with reference to the hopping table. | 11-27-2014 |
20140342573 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS AND RECORDING MEDIUM - There is provided a method for manufacturing a semiconductor device, including forming a thin film containing a specific element and having a prescribed composition on a substrate by alternately performing the following steps prescribed number of times: forming a first layer containing the specific element, nitrogen, and carbon on the substrate by alternately performing prescribed number of times: supplying a first source gas containing the specific element and a halogen-group to the substrate, and supplying a second source gas containing the specific element and an amino-group to the substrate, and forming a second layer by modifying the first layer by supplying a reactive gas different from each of the source gases, to the substrate. | 11-20-2014 |
20140342474 | TEMPERATURE DETECTING APPARATUS, SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A temperature detecting apparatus is provided which is capable of suppressing disconnection of a thermocouple wire or positional deviation of a thermocouple junction portion caused by change over time. The temperature detecting apparatus includes: an insulation rod installed to extend in a vertical direction and including a through-hole in vertical direction; a thermocouple wire inserted in the through-hole of the insulation rod, the thermocouple wire including a thermocouple junction portion at an upper end thereof and an angled portion at a lower end of the insulation rod; and a buffer area installed below the insulation rod and configured to suppress a restriction of a horizontal portion of the angled portion upon heat expansion, wherein an upper portion of the thermocouple wire or a middle portion in the vertical direction are supported by the insulation rod. | 11-20-2014 |
20140341294 | VIDEO ENCODING DEVICE - An image encoding device that appropriately estimates a prediction vector by avoiding an uncoded macro block (MB) is disclosed. The device determines a start point of searching a motion vector for an encoding target region, from the prediction vector for the target region which is determined with motion vectors for surrounding blocks around the target region and in accordance with a predetermined rule, and starts searching for the motion vector from the search start point. If the size of the encoding target region cannot be acquired during calculation of the prediction vector, the device determines the size of the encoding target region, from the size of an encoded region other than the target region. If at least one of the motion vectors for the surrounding blocks cannot be acquired, the device calculates the prediction vector using alternatively a motion vector of an encoded block outside of the target region. | 11-20-2014 |
20140335701 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - A thin film containing boron and a borazine ring structure is formed on a substrate by performing a cycle a predetermined number of times under a condition where the borazine ring structure is preserved in a borazine compound. The cycle includes: supplying a source gas containing boron and a halogen element to the substrate; and supplying a reactive gas including a borazine compound to the substrate. | 11-13-2014 |
20140320682 | IMAGE PROCESSING DEVICE - An image processing device | 10-30-2014 |
20140320671 | TELEVISION CAMERA DEVICE - The present invention displays the light transmission/reception level, the usable amount of remaining power of a utility, or the like, and by means of viewing the display, a user becomes able to easily make a determination, thus increasing the operability of a television camera device. The television camera device has: a camera head; a camera control unit that controls the camera head; and a cable that connects the camera head and the camera control unit. The camera head is provided with: a means for outputting a utility power source; a return video output means; and a prompt output means. The camera control unit is provided with a detection means that detects the power used by the television camera device. The camera head is provided with an output means that displays the power that the utility power source can output and the power detected by the detection means. | 10-30-2014 |
20140318451 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus capable of forming an oxide film on a substrate by forming a layer on the substrate by supplying a source gas into a process vessel accommodating the substrate via the first nozzle, and simultaneously supplying an oxygen-containing gas through a second nozzle and a hydrogen-containing gas through a first nozzle into the process vessel having an inside pressure thereof lower than atmospheric pressure; mixing and reacting the oxygen-containing gas with the hydrogen-containing gas in a non-plasma atmosphere within the process vessel to generate atomic oxygen; and oxidizing the layer with the atomic oxygen to change the layer into an oxide layer is disclosed. | 10-30-2014 |
20140315393 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device includes: pre-treating a surface of a substrate by supplying an oxygen-containing gas and a hydrogen-containing gas to the substrate heated in a process chamber under a pressure less than atmospheric pressure; and forming a film on the pre-treated substrate by performing a cycle a predetermined number of times. The cycle includes: supplying a precursor gas to the substrate in the process chamber; and supplying a reaction gas to the substrate in the process chamber. | 10-23-2014 |
20140312970 | POWER SUPPLY CIRCUIT - A power supply circuit includes: a push-pull amplifier unit which amplifies an input signal with a push-pull amplification protocol; a variable power supply unit which varies, with a control signal, the voltage level of a power supply voltage which is supplied to the push-pull amplifier; a switch control unit which, on the basis of the input signal, outputs the control signal which controls the voltage level of the power supply voltage; and a timing control unit which applies a specified time delay to the input signal. When the control signal rises, the switch control unit causes the control signal to rise at a faster timing, according to the voltage level switch transition timing, than a delay time upon the timing control unit, and when the control signal falls, the switch control unit causes the control signal to fall at the timing of the delay time. | 10-23-2014 |
20140303769 | SUBSTRATE PROCESSING SYSTEM, SUBSTRATE PROCESSING APPARATUS AND METHOD FOR ACCUMULATING DATA FOR SUBSTRATE PROCESSING APPARATUS - A substrate processing system includes a monitored data receiving unit receiving a plurality of types of monitored data; a temporary memory unit periodically storing the monitored data; a monitored data rate detection unit detecting, as a monitored data rate, a total number of times each type of monitored data changes during a first time period by more than a predetermined amount; a monitored data writing allocation unit allocating a storing frequency to each type of monitored data based on the monitored data rate and an upper limit; a monitored data writing unit writing the monitored data to the temporary memory unit during the second time period based on the storing frequency; an accumulative memory unit storing the monitored data for a plurality of periods; and an accumulative data writing unit reading the monitored data for every third time period and storing the monitored data in the accumulative memory unit. | 10-09-2014 |
20140295667 | Method of Manufacturing Semiconductor Device - To improve quality or manufacturing throughput of a semiconductor device, a method includes supplying a source gas to a substrate in a process chamber; exhausting an inside of the process chamber; supplying a reaction gas to the substrate; and exhausting the inside of the process chamber, wherein the source gas and/or the reaction gas is supplied in temporally separated pulses in the supply of the source gas and/or in the supply of the reaction gas. Then, the source gas and/or the reaction gas is supplied in temporally separated pulses to form a film during a gas supply time determined by a concentration distribution of by-products formed on a surface of the substrate. | 10-02-2014 |
20140295648 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - Disclosed is a method of manufacturing a semiconductor device including: a process of transferring a substrate into a processing chamber; a first gas supplying process of supplying a B atom-containing gas into the processing chamber; a first purging process of purging an inside of the processing chamber under an atmosphere of the B atom-containing gas supplied in the first gas supplying process; a second gas supplying process of supplying an Si atom-containing gas into the processing chamber to form a non-doped Si film on the substrate, after the first purging process; and a second purging process of purging the inside of the processing chamber under an atmosphere of the Si atom-containing gas. | 10-02-2014 |
20140287599 | SUBSTRATE PROCESSING APPARATUS, PROCESS CONTAINER, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided are a substrate processing apparatus, a process container and a method of manufacturing a semiconductor device capable of improving the quality of a thin film by stabilizing conditions of heating a substrate when the thin film is formed on the substrate heated using a heating unit installed outside the process container. The substrate processing apparatus includes a process container in which processing to a substrate is performed; a heating unit disposed outside the process container and configured to emit a radiant heat so as to heat the substrate in the process container; and a source gas supply system configured to supply a source gas into the process container, wherein the process container includes a heat absorbing layer disposed on at least a portion of an outer wall of the process container and configured to absorb the radiant heat and cause a saturation of absorption of the radiant heat. | 09-25-2014 |
20140287598 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device includes forming an oxide film on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas to the substrate; and supplying an ozone gas to the substrate. In the act of supplying the precursor gas, the precursor gas is supplied to the substrate in a state where a catalytic gas is not supplied to the substrate, and in the act of supplying the ozone gas, the ozone gas is supplied to the substrate in a state where an amine-based catalytic gas is supplied to the substrate. | 09-25-2014 |
20140287597 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element, boron, carbon, and nitrogen and having a borazine ring skeleton on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a first precursor gas containing the predetermined element and a halogen group to the substrate; supplying a second precursor gas containing the predetermined element and an amino group to the substrate; supplying a reaction gas including an organic borazine compound to the substrate; and supplying a carbon-containing gas to the substrate. In addition, the cycle is performed under a condition in which the borazine ring skeleton in the organic borazine compound is maintained. | 09-25-2014 |
20140287596 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device including forming a thin film containing silicon, oxygen and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying a precursor gas containing silicon, carbon and a halogen element and having an Si—C bonding, and a first catalytic gas to the substrate; and supplying an oxidizing gas and a second catalytic gas to the substrate. | 09-25-2014 |
20140287595 | Method of Manufacturing Semiconductor Device, Substrate Processing Apparatus, Substrate Processing System and Non-Transitory Computer-Readable Recording Medium - A thin film having excellent etching resistance and a low dielectric constant is described. A method of manufacturing a semiconductor device includes forming a thin film on a substrate, removing first impurities containing H | 09-25-2014 |
20140287594 | CLEANING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - A cleaning method includes (a) providing a process chamber after forming an oxide film on a substrate in the process chamber formed by a reaction tube and a manifold supporting the reaction tube by performing a cycle a predetermined number of times, the cycle including supplying a source gas to the substrate through a first nozzle in the manifold extending upward to an inside of the reaction tube, and supplying an oxidizing gas to the substrate through a second nozzle in the manifold extending upward to the inside of the reaction tube; and (b) cleaning an inside of the process chamber. The step (b) includes a first cleaning process of supplying a hydrogen fluoride gas into the reaction tube through the second nozzle; and a second cleaning process of supplying a hydrogen fluoride gas onto an inner wall surface of the manifold through a third nozzle disposed in the manifold. | 09-25-2014 |
20140287375 | INSULATION STRUCTURE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A heat insulation structure, which has a cylindrical side wall part formed in a multilayer structure, includes: a cooling gas supply port provided in an upper portion of a side wall outer layer disposed in an outer side of the side wall part; a cooling gas passage provided between a side wall inner layer disposed in an inner side of the side wall part and the side wall outer layer; a space provided in an inner side of the side wall inner layer; a plurality of blowout holes provided in the side wall inner layer for distributing cooling gas from the cooling gas passage to the space; a buffer area continuously provided in the cooling gas supply port and the cooling gas passage; and a throttle part configured to reduce a cross-sectional area of a boundary surface between the buffer area and the cooling gas passage. | 09-25-2014 |
20140273507 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device is disclosed. The method includes forming a thin film having a borazine ring skeleton and containing a predetermined element, boron, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a precursor gas containing the predetermined element and a halogen element to the substrate; supplying a reaction gas including an organic borazine compound to the substrate; and supplying a carbon-containing gas to the substrate. In addition, the cycle is performed under a condition in which the borazine ring skeleton in the organic borazine compound is maintained. | 09-18-2014 |
20140256160 | Apparatus for Manufacturing Semiconductor Device, Method of Manufacturing Semiconductor Device, and Recording Medium - An apparatus for manufacturing semiconductor devices is provided with a processing liquid supply part for supplying processing liquid into a processing chamber which houses a substrate, a heater part for heating the processing liquid in the processing chamber, and a substrate support part which is provided in the processing chamber and supports the substrate. | 09-11-2014 |
20140256156 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device, includes treating a surface of an insulating film formed on a substrate by supplying a first precursor including a predetermined element and a halogen group to the substrate; and forming a thin film including the predetermined element on the treated surface of the insulating film by performing a cycle a predetermined number of times, the cycle comprising: supplying a second precursor including the predetermined element and the halogen group to the substrate; and supplying a third precursor to the substrate. | 09-11-2014 |
20140256152 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND RECORDING MEDIUM - A substrate processing apparatus comprising: a processing chamber that can accommodate a plurality of substrates, the interior of which is divided into a plurality of zones; a gas supply system that supplies a first reactive gas, a second reactive gas, and an inert gas to each of the plurality of zones; and an exhaust system for removing the gas from the zones. A thin film is formed on the substrates in the zones by repeatedly executing a plurality of steps in relation to the zones, these steps include the following: a first reactive gas supply step; a first purge step; a second reactive gas supply step; and a second purge step. While the film is being formed, a control unit controls the gas supply system and the gas exhaust system so that the steps performed in the plurality of zones at the same time are different from one another. | 09-11-2014 |
20140248783 | CLEANING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND RECORDING MEDIUM - A cleaning method includes: providing a process container in which a process of forming a film on a substrate is performed; and removing a deposit including the film adhered to the process container by supplying a cleaning gas into the process container after performing the process. The act of removing the deposit includes generating a mixture gas of a fluorine-containing gas and a nitrosyl fluoride gas as the cleaning gas by mixture and reaction of the fluorine-containing gas and a nitrogen monoxide gas in a mixture part and supplying the mixture gas from the mixture part into the process container after removing exothermic energy generated by the reaction. | 09-04-2014 |
20140242810 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF SUPPLYING AND EXHAUSTING GAS - A substrate processing apparatus includes: a process chamber for processing a substrate; a substrate mounting member including a mounting surface on which a plurality of substrates are concentrically mounted with facing a ceiling of the process chamber; a rotation instrument for rotating the substrate mounting member in a direction parallel to the mounting surface; a gas supply unit and a gas exhaust unit which are disposed in the process chamber above the substrate mounting member upstream and downstream in the substrate mounting member rotating direction, respectively; and a controller for controlling the gas supply unit, the gas exhaust unit, and the rotation instrument to process the substrates, when the substrate passes through a predetermined region formed in the process chamber by the gas supply unit and the gas exhaust unit, by supplying a reactant gas from the gas supply unit and exhausting the reactant gas from the gas exhaust unit. | 08-28-2014 |
20140242809 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device is disclosed. The method includes forming a film containing a predetermined element and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a first process gas containing the predetermined element and a halogen element to the substrate; supplying a second process gas containing carbon and nitrogen to the substrate; supplying a third process gas containing carbon to the substrate; and supplying a fourth process gas to the substrate, the fourth process gas being different from each of the first to the third process gases. | 08-28-2014 |
20140242790 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A metal-containing film capable of adjusting a work function is formed. A first source containing a first metal element and a halogen element and a second source containing a second metal element different from the first metal element and an amino group are alternately supplied onto a substrate having a high-k dielectric film to form a composite metal nitride film on the high-k dielectric film. | 08-28-2014 |
20140235068 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - Provided is a method of manufacturing a semiconductor device. The method includes (a) loading a substrate having a silicon-containing film formed thereon into a process chamber; (b) supplying a gas into the process chamber from a gas supply unit until an inner pressure of the process chamber is equal to or greater than atmospheric pressure; and (c) supplying a process liquid from a process liquid supply unit to the substrate to oxidize the silicon-containing film. | 08-21-2014 |
20140235067 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A thin film that has a predetermined composition and containing predetermined elements is formed on a substrate by performing a cycle of steps a predetermined number of times, said cycle comprising: a step wherein a first layer containing the predetermined elements, nitrogen and carbon is formed on the substrate by alternately performing, a predetermined number of times, a process of supplying a first source gas containing a predetermined element and a halogen group to the substrate and a process of supplying a second source gas containing a predetermined element and an amino group to the substrate; a step wherein a second layer is formed by modifying the first layer by supplying an amine-based source gas to the substrate; and a step wherein a third layer is formed by modifying the second layer by supplying a reaction gas that is different from the source gases to the substrate. | 08-21-2014 |
20140235066 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF CLEANING PROCESSING VESSEL - When a dry cleaning process is performed in a processing chamber by adding nitrogen monoxide (NO) gas to a cleaning gas, the handling is facilitated, and cleaning performance is improved. A substrate processing apparatus includes a processing vessel configured to process a substrate, a first cleaning gas supply system configured to pre-mix a gas containing fluorine atoms with the NO gas and supply the pre-mixed gas into the processing vessel, and a second cleaning gas supply system installed apart from the first cleaning gas supply system and configured to supply the fluorine-containing gas into the processing vessel. | 08-21-2014 |
20140222187 | Substrate Processing Apparatus and Non-Transitory Computer-Readable Recording Medium - Provided is a substrate processing apparatus capable of efficiently resuming processing of unprocessed substrates after an error occurs during processing of substrates. In the substrate processing apparatus that executes a recipe defining an order of processing substrates and manages process status of the substrates, the process status are changed to a processing state so as to execute the recipe, are changed to a paused state when unprocessed substrates are present among the substrates to be processed according to the recipe, due to an error occurring during the execution of the recipe, and are changed from the paused state to the processing state to resume the execution of the recipe so as to process the unprocessed substrates when the error is canceled and a operation is performed to resume the execution of the recipe. | 08-07-2014 |
20140220789 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - An oxide film capable of suppressing reflection of a lens is formed under a low temperature. A method of manufacturing a semiconductor device includes forming a metal-containing oxide film on a substrate by performing a cycle a predetermined number of times, the cycle comprising: (a) supplying a metal-containing source to the substrate; (b) supplying an oxidizing source to the substrate; and (c) supplying a catalyst to the substrate. | 08-07-2014 |
20140220788 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - The present disclosure suppresses oxidation of a base film on a substrate surface during the formation of an oxide film. A method of manufacturing a semiconductor device according to the present disclosure includes forming an initial layer including a predetermined element and having a thickness of several atomic layers on a substrate in a process chamber by supplying a predetermined-element-containing gas to the substrate, and forming an oxide film including the predetermined element on the initial layer by performing a cycle a predetermined number of times, the cycle including supplying a precursor gas including the predetermined element to the substrate in the process chamber and supplying an oxygen-containing gas and a hydrogen-containing gas to the substrate heated in the process chamber under a pressure lower than an atmospheric pressure. | 08-07-2014 |
20140220787 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device includes forming a thin film containing a specific element, oxygen, carbon, and nitrogen by performing a cycle a predetermined number of times. The cycle includes supplying a specific element-containing gas, supplying a carbon-containing gas, supplying an oxidizing gas, and supplying a nitriding gas. The act of supplying the nitriding gas is performed before the act of supplying the specific element-containing gas, and the act of supplying the carbon-containing gas and the act of supplying the oxidizing gas are not performed until the act of supplying the specific element-containing gas is performed. | 08-07-2014 |
20140213069 | Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device and Non-transitory Computer-readable Recording Medium - A substrate processing apparatus includes a process chamber in which a substrate is accommodated; a source gas supply system configured to supply a source gas onto the substrate; first and second reactive gas supply systems configured to supply a reactive gas onto the substrate via first and second interconnected reactive gas supply pipes, wherein a gas storage unit is installed at the second reactive gas supply pipe to store the reactive gas and the reactive gas is supplied onto the substrate via the gas storage unit; and a control unit configured to control the source gas supply system to supply the source gas onto the substrate and to control the first and second reactive gas supply systems to supply the reactive gas onto the substrate via the first and second reactive gas supply pipes. | 07-31-2014 |
20140206204 | SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - Provided is a substrate processing apparatus including a reaction chamber configured to heat a substrate; a transfer chamber configured to transfer the heated substrate; a refrigerant flow path installed in the reaction chamber; a refrigerant flow path installed in the reaction chamber; a refrigerant supply unit installed in the refrigerant flow path; a refrigerant exhaust unit installed in the refrigerant flow path; a transfer chamber refrigerant supply unit installed in the transfer chamber; a transfer chamber refrigerant exhaust unit installed in the transfer chamber; a heat exchanger connected to the refrigerant exhaust pipe and the transfer chamber refrigerant exhaust unit; a turbine connected to the heat exchanger; a generator connected to the turbine; and a control unit configured to control the refrigerant supply unit and the transfer chamber refrigerant supply unit. | 07-24-2014 |
20140204757 | WIRELESS SENSOR NETWORK SYSTEM - A wireless sensor network system includes: sensor terminals and a management terminal. A sensor terminal sends a join request at a first transmission power; and the management terminal calculates the traffic load of nodes on the reception path of the join request. If the number of hops and the traffic load are both within respective permissible ranges, the management terminal sets the reception path as the communication route of the sensor terminal. If the number of hops and/or the load is not within the permissible rage, the management terminal reconstructs the communication path by outputting an instruction to the sensor terminal to make direct connection to the management terminal or a specified node with a low traffic load, at a second transmission power greater than the first transmission power. When receiving the instruction, the sensor terminal transmits to the management terminal or the specified node at the second transmission power. | 07-24-2014 |
20140182515 | SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND VAPORIZATION SYSTEM - A substrate processing apparatus includes: a processing chamber configured to accommodate a substrate; a vaporized gas supply system which includes a vaporizer to vaporize a liquid precursor into a vaporized gas and is configured to supply the vaporized gas into the processing chamber; and a control unit configured to control the vaporized gas supply system to supply a liquid precursor and a carrier gas into a vaporization chamber formed in the vaporizer such that a ratio of a partial pressure of the liquid precursor to a total pressure in the vaporization chamber is equal to or lower than 20%. | 07-03-2014 |
20140179086 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS AND COMPUTER-READABLE RECORDING MEDIUM - A method of manufacturing a semiconductor device, includes: alternately performing (i) a first step of alternately supplying a first raw material containing a first metal element and a halogen element and a second raw material containing a second metal element and carbon to a substrate by a first predetermined number of times, and (ii) a second step of supplying a nitridation raw material to the substrate, by a second predetermined number of times, wherein alternating the first and second steps forms a metal carbonitride film containing the first metal element having a predetermined thickness on the substrate. | 06-26-2014 |
20140179085 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - A method of manufacturing a semiconductor device can enhance controllability of the diameters of grains of a film containing a predetermined element such as a silicon film when the film is formed. The method includes (a) forming a seed layer containing a predetermined element and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including alternately performing supplying a first source gas containing the predetermined element, an alkyl group and a halogen group to the substrate and supplying a second source gas containing the predetermined element and an amino group to the substrate, or by performing supplying the first source gas to the substrate a predetermined number of times; and (b) forming a film containing the predetermined element on the seed layer by supplying a third source gas containing the predetermined element and free of the alkyl group to the substrate. | 06-26-2014 |
20140170860 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Substrate processing uniformity is improved in the surfaces of wafers and between the wafers. A method of manufacturing a semiconductor device, including: loading a substrate holder into an inner tube, the substrate holder holding a plurality of substrates in a state where the plurality of substrates are horizontally oriented and stacked; forming thin films on the plurality of substrates by supplying a source gas to an inside of the inner tube; and unloading the substrate holder from the inner tube, wherein the forming the thin films is performed in a state where a conductance of a space between an inner wall of the inner tube and a gas penetration preventing cylinder is smaller than a conductance of a region where the plurality of substrates are stacked. | 06-19-2014 |
20140170858 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - Provided is a method including forming a film including a predetermined element, oxygen and at least one element selected from a group consisting of nitrogen, carbon and boron on a substrate by performing a cycle a predetermined number of times, the cycle including supplying a source gas to the substrate wherein the source gas contains the predetermined element, chlorine and oxygen with a chemical bond of the predetermined element and oxygen, and supplying a reactive gas to the substrate wherein the reactive gas contains the at least one element selected from the group consisting of nitrogen, carbon and boron. | 06-19-2014 |
20140166145 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Substrate processing uniformity is improved in the surfaces of wafers and between the wafers. An inner tube for a substrate processing apparatus for forming a high-k film, includes: a gas exhaust outlet formed at a sidewall of the inner tube; and a gas injection hole located at position spaced outward from the sidewall of the inner tube, wherein a distance of an outer edge of a substrate accommodated in the inner tube and the gas exhaust outlet is greater than a distance between the outer edge of the substrate accommodated in the inner tube and the gas injection hole. | 06-19-2014 |
20140162548 | RELAY APPARATUS FOR BROADCAST WAVES - The objective of the present invention is to provide a relay apparatus capable of performing normal relay transmission for broadcast waves by preventing effects caused by wraparound in a relay apparatus. For broadcast waves received by a relay apparatus ( | 06-12-2014 |
20140162454 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - Provided is a method of manufacturing a semiconductor device. The method includes (a) loading a substrate into a processing chamber; (b) starting a supply of a first processing gas into the processing chamber; (c) starting a supply of a second processing gas into the processing chamber during the supply of the first processing gas; (d) stopping the supply of the second processing gas during the supply of the first processing gas; (e) stopping the supply of the first processing gas after performing the step (d); (f) removing the first processing gas and the second processing gas remaining after performing the step (e) from the processing chamber; and (g) unloading the substrate from the processing chamber. | 06-12-2014 |
20140132797 | TELEVISION CAMERA - There is provided a television camera that can automatically adjust a detected video signal balance without using a grayscale chart in order to satisfactorily capture a subject. The television camera adjusts the detected video signal balance by using a white (achromatic) subject and without using the grayscale chart. The television camera firstly captures a white (achromatic) subject. The television camera detects a level of a G signal on a detection gate, and sequentially and automatically adjusts a lens iris in order that the level of the G signal becomes a predetermined signal level (level | 05-15-2014 |
20140121827 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF PROCESSING ERROR OF SUBSTRATE PROCESSING APPARATUS - During a carrying operation, the position, transportation origin, and transportation destination of a carrier or a boat can be easily checked. A carrying system is configured to carry a substrate, a manipulation unit is configured to display an operation state of the carrying system on a manipulation screen, and a control unit is configured to control an operation of the carrying system. The manipulation unit displays a carrying system icon indicating the carrying system which is a carrying target object and a carrying-out icon at predetermined positions of the manipulation screen corresponding to a transportation origin of the carrying system, and a carrying-in icon at a predetermined position of the manipulation screen corresponding to the transportation destination of the carrying system, | 05-01-2014 |
20140120636 | SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND THERMOCOUPLE SUPPORT - A substrate processing apparatus includes: a reaction tube configured to accommodate a substrate holder holding a plurality of substrates and process a substrate held on the substrate holder; a heating unit installed outside the reaction tube and configured to heat an inside of the reaction tube; a protection tube installed to extend in a vertical direction in contact with an outer wall of the reaction tube; an insulating tube disposed inside the protection tube and having through-holes extending in a vertical direction; a thermocouple having a thermocouple junction provided at an upper end thereof, and thermocouple wires joined at the thermocouple junction and inserted into the through-holes of the insulating tube; a gas supply unit configured to supply a gas, for processing a substrate accommodated in the reaction tube, into the reaction tube; and an exhaust unit configured to exhaust a gas from the reaction tube. | 05-01-2014 |
20140119431 | VIDEO ENCODING DEVICE - Provided is a video encoding device having an AFF-mode-determining unit ( | 05-01-2014 |
20140112739 | SUBSTRATE PROCESSING APPARATUS, PURGING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM - A substrate processing apparatus includes a processing vessel configured to process a substrate; a first purging part configured to perform a first purge to supply inert gas at a first flow rate into a substrate container accommodating the substrate; and a second purging part configured to perform a second purge to supply inert gas at a second flow rate into the substrate container, the second flow rate being lower than the first flow rate. | 04-24-2014 |
20140112215 | WIRELESS COMMUNICATION SYSTEM - A technique for enabling utilization of a one-way link in wireless communication systems of the type using whitespaces is disclosed. A wireless communication system ( | 04-24-2014 |
20140106573 | Substrate Processing Apparatus and Method of Manufacturing Semiconductor Device - A substrate processing apparatus includes a substrate processing chamber including a plasma generation space where a plasma is generated and a substrate processing space where a substrate is placed during a substrate process; an inductive coupling structure outside the plasma generation space wherein a sum of electrical lengths of a coil of the inductive coupling structure and a waveform adjustment circuit connected to the coil is an integer multiple of a wavelength of an applied power; a substrate mounting table in the substrate processing space and supporting the substrate including grooves having high aspect ratios with a silicon-containing layer disposed thereon; a substrate transfer port at a wall of the substrate processing chamber; a substrate mounting table elevator moving the substrate mounting table upward/downward; an oxygen gas supply system to supply an oxygen-containing gas into the plasma generation space; and an exhaust unit exhausting gas from the substrate processing chamber. | 04-17-2014 |
20140104457 | VIDEO PROCESSING DEVICE - Provided is a video processing device with which it is possible to efficaciously carry out a process of superpositioning a monitor character signal in a video signal which is inputted from a camera and outputting same separately from the video signal. The video processing device comprises: a character signal emitter which generates a character signal on the basis of the monitor data; and a character superposition unit which superpositions the character signal which is generated by the character signal emitter upon the least significant bits of the color difference signal of the video signal which is inputted from the camera. With respect to downconverting the video signal whereupon the character signal has been superpositioned, only a downsampling process on the least significant bits of the color difference signal is carried out, and an interpolation filter process is not carried out. | 04-17-2014 |
20140099797 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A silicon oxide film is formed, having a specific film thickness on a substrate by alternately repeating: forming a silicon-containing layer on the substrate by supplying a source gas containing silicon, to the substrate housed in a processing chamber and heated to a first temperature; and oxidizing and changing the silicon-containing layer formed on the substrate, to a silicon oxide layer by supplying reactive species containing oxygen to the substrate heated to the first temperature in the processing chamber under a pressure atmosphere of less than atmospheric pressure, the reactive species being generated by causing a reaction between an oxygen-containing gas and a hydrogen-containing gas in a pre-reaction chamber under a pressure atmosphere of less than atmospheric pressure and heated to a second temperature equal to the first temperature or higher than the first temperature. | 04-10-2014 |
20140087568 | METHOD OF CLEANING, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of cleaning an interior of a process chamber by supplying a cleaning gas into the process chamber after a process of forming a thin film on a substrate in the process chamber is performed, including alternately repeating changing a pressure in the process chamber from a first pressure range to a second pressure range, and changing the pressure in the process chamber from the second pressure range to the first pressure range. In this method, when the pressure in the process chamber is changed to the first pressure range, the pressure in the process chamber is changed to the first pressure range without being maintained at the second pressure range, and when the pressure in the process chamber is changed to the second pressure range, the pressure in the process chamber is changed to the second pressure range without being maintained at the first pressure range. | 03-27-2014 |
20140087567 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a substrate processing apparatus including: a substrate mounting portion provided in a process chamber and capable of mounting a plurality of substrates in a circumferential direction; a rotating mechanism that rotates the substrate mounting portion at a predetermined angular velocity; dividing structures provided in a radial form from a center of a lid of the process chamber so as to divide the process chamber into a plurality of areas; and gas supply areas disposed between the adjacent dividing structures, wherein an angle between the adjacent dividing structures with one gas supply area interposed is set to an angle corresponding to the angular velocity and a period in which a portion of the substrate mounting portion passes through the gas supply area. | 03-27-2014 |
20140087565 | Method of Manufacturing Semiconductor Device, Substrate Processing Apparatus, and Non-Transitory Computer Readable Recording Medium - A method of manufacturing a semiconductor device includes forming thin films on substrates by performing a cycle a predetermined number of times. The cycle includes: supplying a process gas into a process container and confining the gas in the container including an outer reaction tube and an inner reaction tube having a flat top inner surface at an upper end portion covering a portion of a top surface of the support arranging and supporting the substrates and including a communication section connecting an inside of the inner reaction tube to an inside of the outer reaction tube, wherein the communication section is disposed at a region other than a region horizontally encompassing a substrate arrangement region; maintaining a state where the gas is confined in the container; and exhausting the gas from the container via the communication section and a space between the inner and outer reaction tubes. | 03-27-2014 |
20140084389 | Method of Manufacturing Semiconductor Device, Substrate Processing Method and Apparatus, Non-Transitory Computer Readable Recording Medium, and Semiconductor Device - Provided are a semiconductor device manufacturing method by which a semiconductor device in which a threshold voltage is suppressed from changing can be manufactured, a substrate processing method and apparatus, a non-transitory computer-readable recording medium, and the semiconductor device. The semiconductor device manufacturing method includes forming an amorphous first oxide film including a first element on a substrate, and modifying the first oxide film to an amorphous second oxide film including the first element and a second element different from the first element by adding the second element to the first oxide film. The first element includes at least one element selected from a group consisting of aluminum, yttrium and lanthanum. A concentration of the second element in the second oxide film is controlled to be lower than that of the first element in the second oxide film. | 03-27-2014 |
20140080321 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device includes performing a cycle a predetermined number of times, the cycle including supplying a first precursor containing a specific element and a halogen group to form a first layer and supplying a second precursor containing the specific element and an amino group to modify the first layer into a second layer. A temperature of the substrate is set such that a ligand containing the amino group is separated from the specific element in the second precursor, the separated ligand reacts with the halogen group in the first layer to remove the halogen group from the first layer, the separated ligand is prevented from being bonded to the specific element in the first layer, and the specific element from which the ligand is separated in the second precursor is bonded to the specific element in the first layer. | 03-20-2014 |
20140080319 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element, oxygen, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a predetermined element-containing gas to the substrate; supplying a carbon-containing gas and a plasma-excited inert gas to the substrate; supplying an oxidizing gas to the substrate; and supplying a nitriding gas to the substrate. | 03-20-2014 |
20140080317 | MEHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - A stress of a film formed on a substrate can be reduced. A method of manufacturing a semiconductor device includes: forming a film on the substrate by supplying a process gas to the substrate while heating the substrate to a first temperature; controlling a stress to the film by changing a stress value of the film formed on the substrate, by supplying a plasma-excited process gas to the substrate while changing a temperature of the substrate to a second temperature different from the first temperature; and unloading the substrate from the processor chamber. | 03-20-2014 |
20140080314 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element, oxygen, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times after supplying a nitriding gas to the substrate. The cycle includes performing the following steps in the following order: supplying a carbon-containing gas to the substrate; supplying a predetermined element-containing gas to the substrate; supplying the carbon-containing gas to the substrate; supplying an oxidizing gas to the substrate; and supplying the nitriding gas to the substrate. | 03-20-2014 |
20140074277 | SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD OF GENERATING RECIPE - Provided is a method of automatically setting, in a recipe, a process parameter (PP) according to the number of substrates to be processed. The method includes (a) displaying a process parameter of a process recipe on a display unit; (b) displaying a parameter name in a process parameter file on the display unit; (c) generating a first recipe by substituting the process parameter with the parameter name; (d) downloading the first recipe and one of a plurality of condition tables corresponding to the selected number of substrates when the number of substrates to be processed in a processing chamber is selected; and (e) generating a second recipe by substituting the process parameter of the downloaded one of the condition tables for the parameter name in the downloaded first recipe. | 03-13-2014 |
20140073146 | Reaction Tube, Substrate Processing Apparatus and Method of Manufacturing Semiconductor Device - Provided are a reaction tube, a substrate processing apparatus, and a method of manufacturing a semiconductor device capable of suppressing a non-uniform distribution of a gas in a top region to improve the flow of the gas and film uniformity within and between substrate surfaces. The reaction tube has a cylindrical shape, accommodates a plurality of substrates stacked therein, and includes a cylindrical portion and a ceiling portion covering an upper end portion of the cylindrical portion, the ceiling portion having a substantially flat top inner surface. A thickness of a sidewall of the ceiling portion is greater than that of a sidewall of the cylindrical portion. | 03-13-2014 |
20140073142 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A thin film having high HF resistance and a low dielectric constant can be formed in a low temperature range with a high productivity. A thin film including a predetermined element and a borazine ring skeleton is formed on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a source gas including the predetermined element and a halogen group to the substrate and supplying a reaction gas including a borazine compound to the substrate under a condition where the borazine ring skeleton in the borazine compound is maintained. | 03-13-2014 |
20140065840 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - To form an insulating film with extremely low concentration of impurities such as carbon, hydrogen, nitrogen, chlorine, etc in a film. There are provided the steps of forming a specific element-containing layer on a substrate by supplying source gas containing a specific element into a processing container in which the substrate is accommodated; changing the specific element-containing layer into a nitride layer, by activating and supplying gas containing nitrogen into the processing container; and changing the nitride layer into an oxide layer or an oxynitride layer, by activating and supplying gas containing oxygen into the processing container; with this cycle set as one cycle and performed for at least one or more times. | 03-06-2014 |
20140057456 | Substrate Processing Apparatus and Method of Manufacturing Semiconductor Device - The substrate processing apparatus includes a process chamber; a susceptor configured to support a wafer; lifter pins configured to support the wafer on the susceptor; a gas supply unit configured to supply a gas into the process chamber; a heating unit configured to heat the wafer; an excitation unit configured to excite the gas supplied into the process chamber; an exhaust unit configured to exhaust the inside of the process chamber; and a controller. The controller controls a reducing gas to be supplied into the process chamber in a state in which the wafer is supported by the lifter pins, and controls the gas supply unit to supply an oxidizing gas and a reducing gas into the process chamber in a state in which the wafer is supported by the susceptor. | 02-27-2014 |
20140057452 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element, carbon, nitrogen and a borazine ring skeleton on a substrate by performing a cycle for a first predetermined number of times. The cycle includes forming a first layer containing the predetermined element, a halogen group, carbon and nitrogen by supplying a first precursor gas containing the predetermined element and the halogen group and a second precursor gas containing the predetermined element and an amino group to the substrate, for a second predetermined number of times; and forming a second layer containing the predetermined element, carbon, nitrogen and the borazine ring skeleton by supplying a reaction gas containing a borazine compound to the substrate and allowing the first layer to react with the borazine compound to modify the first layer under a condition where the borazine ring skeleton in the borazine compound is maintained. | 02-27-2014 |
20140051261 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - Provided are: forming an oxycarbonitride film, an oxycarbide film or an oxide film on a substrate by alternately performing a specific number of times: forming a first layer containing the specific element, nitrogen and carbon, on the substrate, by alternately performing a specific number of times, supplying a first source containing the specific element and a halogen-group to the substrate in a processing chamber, and supplying a second source containing the specific element and an amino-group to the substrate in the processing chamber; and forming a second layer by oxidizing the first layer by supplying an oxygen-containing gas, and an oxygen-containing gas and a hydrogen-containing gas to the substrate in the processing chamber. | 02-20-2014 |