HITACHI HIGH-TECHNOLOGIES CORPORATION Patent applications |
Patent application number | Title | Published |
20160141151 | PLASMA PROCESSING APPARATUS - Provided is a plasma processing apparatus including: a circular waveguide connected with a vacuum vessel, and through which a circularly polarized wave of an electric field for plasma formation propagates; a processing chamber which is arranged below the circular waveguide, and in which plasma is formed; a circularly polarized wave generator, which is arranged in the waveguide; a circularly polarized wave adjuster which is connected with the circular waveguide below the circularly polarized wave generator; a circularly polarized wave detector which is below the circularly polarized wave adjuster; and a controller which adjusts an operation of the circularly polarized wave adjuster according to an output from the circularly polarized wave detector, in which the circularly polarized wave adjuster adjusts a length of a protrusion of a dielectric stub into the circular waveguide based on a signal from the controller. | 05-19-2016 |
20160133834 | PLASMA ETCHING METHOD - In a plasma etching method of plasma-etching a sample which has a first magnetic film, a second magnetic film disposed above the first magnetic film, a metal oxide film disposed between the first magnetic film and the second magnetic film, a second metal film disposed over the second magnetic film and forming an upper electrode, and a first metal film disposed below the first magnetic film and forming a lower electrode, the plasma etching method includes the steps of: a first process for etching the first magnetic film, the metal oxide film, and the second magnetic film by using carbon monoxide gas; and a second process for etching the sample by using mixed gas of hydrogen gas and inactive gas after the first process. In this case, the first metal film is a film containing therein tantalum. | 05-12-2016 |
20160133530 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a processing chamber configured to perform a plasma processing on a sample, a first radio frequency power supply configured to generate a plasma, a sample stage configured to place the sample thereon, a second radio frequency power supply configured to supply a radio frequency power to the sample stage, a mass flow controller configured to supply a gas into the processing chamber, and a control device configured to change the radio frequency power supplied from the first radio frequency power supply or the second radio frequency power supply based on a change of plasma impedance after a first gas is switched to a second gas. | 05-12-2016 |
20160126057 | Ion Milling Device - The present invention aims at providing an ion milling apparatus for emitting an ion beam to a sample to process the sample and capable of controlling the temperature of the sample with high accuracy regardless of deformation or the like of the sample being irradiated with the ion beam, and proposes an ion milling apparatus including at least one of a shield holding member for supporting a shield for shielding the sample from the ion beam while exposing a part of the sample to the ion beam; a shifting mechanism for shifting a surface of the sample stand in contact with the sample following deformation of the sample during irradiation with the ion beam, the shifting mechanism having a temperature control mechanism for controlling temperature of at least one of the shield holding member and the sample stand; and a sample holding member disposed between the shield and the sample, the sample holding member deforming following deformation of the sample during irradiation with the ion beam, for example. | 05-05-2016 |
20160116421 | DEFECT INSPECTING METHOD AND DEFECT INSPECTING APPARATUS - A defect inspecting method and apparatus for inspecting a surface state including a defect on a wafer surface, in which a polarization state of a laser beam irradiated onto the wafer surface is connected into a specified polarization state, the converted laser beam having the specified polarization state is inserted onto the wafer surface, and a scattering light occurring from an irradiated region where the laser beam having the specified polarization state is irradiated, is separated into a first scattering light occurring due to a defect on the wafer and a second scattering light occurring due to a surface roughness on the wafer. An optical element for optical path division separates the first and second scattering lights approximately at the same time. | 04-28-2016 |
20160109382 | DEFECT INSPECTION METHOD AND DEVICE FOR SAME - In defect scanning carried out in a process of manufacturing a semiconductor or the like, a light detection optical system comprising a plurality of photosensors is used for detecting scattered light reflected from a sample. The photosensors used for detecting the quantity of weak background scattered light include a photon counting type photosensor having few pixels whereas the photosensors used for detecting the quantity of strong background scattered light include a photon counting type photosensor having many pixels or an analog photosensor. In addition, nonlinearity caused by the use of the photon counting type photosensor as nonlinearity of detection strength of defect scattered light is corrected in order to correct a detection signal of the defect scattered light. | 04-21-2016 |
20160109368 | NUCLEIC ACID ANALYZER AND NUCLEIC ACID ANALYSIS METHOD USING SAME - Provided is a nucleic acid analyzer, which does not require manual processes by a highly trained operator such as a researcher and is easy to use, small-sized, capable of accepting multiple samples, and performs speedy analysis, and a nucleic acid analysis method using the analyzer. The analyzer and method perform detection in a plurality of exposure times, provide a program for determining a threshold for signal detection, and determine whether a faint signal peak is a false signal peak. | 04-21-2016 |
20160091304 | Surface Profile Measurement Method and Device Used Therein - To provide a technique that can measure a surface profile of any test object in a nondestructive manner and noncontact manner, highly accurately, and in a wide tilt angle dynamic range. In white light interference method using a dual beam interferometer, the technique is configured to be capable of changing a surface orientation of a standard plane with respect to an incident optical axis on the standard plane, acquires, while relatively changing the surface orientation of the standard plane with respect to a local surface orientation in any position on a test surface, a plurality of interferograms generated by interference of reflected light from the test surface and reflected light from the standard plane, and calculates the local surface orientation on the test surface from the interferograms to thereby measure a surface profile of the test surface. | 03-31-2016 |
20160079107 | PLASMA PROCESSING APPARATUS - In a plasma processing apparatus, a connector section with the film-like electrode of a sintered plate of a sample stage to which high-frequency power is supplied includes a conductor section disposed inside a through hole, an upper part of which is bonded to the film-like electrode and a lower part of which is connected to an end of a power supply path of the high-frequency power, and a boss disposed between the conductor section and a substrate surrounding an outer periphery of the conductor section inside the through hole and made of an insulating material. Upper ends of a rod-like member at the center of the conductor section and a socket surrounding the rod-like member are disposed at a position higher than the boss, and an adhesive is prevented from entering between the socket and the rod-like member in the upper end of the socket. | 03-17-2016 |
20160079073 | PLASMA PROCESSING METHOD - A plasma processing method includes: a first step of introducing a gas having reactivity with a film to be processed disposed in advance on a top surface of a wafer into a processing chamber to form an adhesion layer on the film; a second step of expelling a part of the gas remaining in the processing chamber while supply of the gas having reactivity is stopped; a third step of introducing a rare gas into the processing chamber to form a plasma and desorbing reaction products of the adhesion layer and the film to be processed using particles and vacuum ultraviolet light in the plasma; and a fourth step of expelling the reaction products while the plasma is not formed. | 03-17-2016 |
20160079055 | SAMPLE CLEANING APPARATUS AND SAMPLE CLEANING METHOD - A sample cleaning apparatus includes a vibrating unit which ultrasonically vibrates a sample while the sample is mounted and held on a sample stage arranged in a processing chamber, the vibrating unit including: a dielectric film which is arranged on the sample stage and above which the sample is mounted; electrodes which are arranged adjacent to each other in the dielectric film; and a radio frequency power supply which supplies radio frequency power at frequencies in a prescribed range to the electrodes while the sample is hold on the sample stage; and a gas supply unit which forms a gas flow in a direction along a surface of the sample, so that particles are expelled. | 03-17-2016 |
20160079043 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a stage in a processing chamber where plasma is formed, a wafer to be processed, and an electrode arranged at an upper part of the stage and supplied with power to electrostatically attract and hold the wafer on the stage, and consecutively processing a plurality of wafers one by one. There are plural processing steps of conducting processing using the plasma under different conditions and there are plural periods when formation of plasma is stopped between the processing steps. An inner wall of the processing chamber is coated before starting the processing of any wafer, and voltage supplied to the electrode is changed according to a balance of respective polarities of particles floating and charged in the processing chamber in each period when formation of plasma is stopped. | 03-17-2016 |
20160077035 | ELECTRODE FOR ELECTROCHEMICAL MEASUREMENT, ELECTROLYSIS CELL FOR ELECTROCHEMICAL MEASUREMENT, ANALYZER FOR ELECTROCHEMICAL MEASUREMENT, AND METHODS FOR PRODUCING SAME - Provided are an electrode, an electrolysis cell, and an electrochemical analyzer that improve the long-term stability of analysis data. A working electrode, a counter electrode, and reference electrode are disposed in an electrolysis cell. The working electrode is obtained by forming a lead wire in a composite material having platinum or a platinum alloy as a base material, in which a metal oxide is dispersed, or in a laminated material obtained by laminating a valve metal and platinum such that the cross sectional crystal texture in the thickness direction of the platinum is formed in layers and the thickness of each layer of the platinum is 5 micrometers or less. The metal oxide is selected from among zirconium oxide, tantalum oxide, and niobium oxide, and the metal oxide content of the platinum or the platinum alloy is 0.005 to 1 wt % in terms of the zirconium, tantalum, or niobium metal. | 03-17-2016 |
20160069816 | DEFECT DETECTION METHOD AND DEFECT DETECTION DEVICE AND DEFECT OBSERVATION DEVICE PROVIDED WITH SAME - The disclosed device, which, using an electron microscope or the like, minutely observes defects detected by an optical appearance-inspecting device or an optical defect-inspecting device, can reliably insert a defect to be observed into the field of an electron microscope or the like, and can be a device of smaller scale. The electron microscope, which observes defects detected by an optical appearance-inspecting device or an optical defect-inspecting device, has a configuration incorporating an optimal microscope that re-detects defects, and a spatial filter and a distribution polarization element are inserted at the pupil plane when making dark-field observations using this optical microscope. The electron microscope, which observes defects detected by an optical appearance-inspecting device or an optical defect-inspecting device, has a configuration incorporating an optimal microscope that re-detects defects, and a distribution filter is inserted at the pupil plane when making dark-field observations using this optical microscope. | 03-10-2016 |
20160064189 | PLASMA PROCESSING APPARATUS - A sample stage includes plural pushup pins that move a sample up/down above the stage, a recessed and protruding dielectric film on which the sample is loaded, a feeding port disposed on the film and through which gas is fed to a gap between the sample and the film, and openings of through-holes in which the pushup pins are housed, and the stage is connected to a feeding/evacuation conduit including a feeding-path that communicates with the port and through which gas fed to the gap flows, an evacuation-path that communicates with the opening and through which gas fed to the gap is discharged, and a connection-path through which the feeding-path and the evacuation-path communicate. With communication between the feeding-path and the evacuation-path via the connection-path interrupted, gas from the feeding-path is fed to the gap and into the through-hole via the gap. | 03-03-2016 |
20160054257 | Electrolyte Concentration Measuring Apparatus and Measuring Method Using Same - An electrolyte concentration measuring apparatus is provided with: a plurality of ion selective electrodes and one reference electrode; a sample introduction unit that introduces a sample solution to the plurality of ion selective electrodes and the reference electrode; a potential measuring unit that measures a voltage between the plurality of ion selective electrodes and the reference electrode; and a resistance measuring unit that measures a direct-current resistance of the plurality of ion selective electrodes. | 02-25-2016 |
20160041092 | METHOD AND APPARATUS FOR INSPECTING DEFECTS - In optical dark field defect inspection, the present invention provides including: condensing laser emitted from a light source in a line shape; reflecting the laser, with a mirror; irradiating the reflected laser via an objective lens to a sample placed on a table from a vertical direction; condensing reflected scattered light from the sample with the objective lens; shielding diffraction light occurred from a periodical pattern formed on the sample, in the reflected scattered light from the sample and scattered light occurred from the mirror, with a spatial filter; receiving the reflected scattered light from the sample, not shielded with the spatial filter, with an imaging lens, and forming an image of the reflected scattered light; detecting the image of the reflected scattered light; and processing a detection signal obtained by detecting the image of the reflected scattered light and detecting a defect on the sample. | 02-11-2016 |
20160027621 | PLASMA PROCESSING APPARATUS AND SAMPLE STAGE FABRICATING METHOD - A plasma processing apparatus includes: a vacuum vessel, a processing chamber disposed inside of the vacuum vessel, inside of which plasma is formed, a sample stage disposed below the processing chamber, on whose upper surface a sample that is a target processed by using the plasma is mounted, a sintered plate of dielectric material constituting a mounting surface of the sample stage on which the sample is mounted, abase material of metal bonded to the sintered plate below it with a bonding layer made of an adhesive agent intervening therebetween, and a cooling medium flow channel disposed inside of the base material, through which a cooling medium flows, in which a shearing force of the bonding layer generated in a portion on the peripheral side of the sample stage is made smaller than that generated in a portion on the center side. | 01-28-2016 |
20160027618 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a sample stage in a processing chamber in a vacuum container having a placement surface on which a wafer to be processed by using the plasma is placed, a discharge pump connected to a discharge port disposed below the sample stage, and an adjuster that adjusts the amount of discharged gas, in which a first process step of supplying a first processing gas from above the placement surface into the processing chamber and supplying a second processing gas from below the placement surface into the processing chamber to process the wafer by using the first processing gas and a second process step where the first processing gas and the second processing gas are reversed are repeatedly switched over therebetween, and the adjuster adjusts a pressure in the processing chamber to a predetermined value during the processing. | 01-28-2016 |
20160027615 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes: a plasma processing chamber; a radio frequency power source; a sample stage on which a sample is mounted; an electrode which is arranged inside the sample stage and electrostatically chucks the sample; a DC power source which applies a DC voltage to the electrode; and a control device which controls an output voltage of the DC power source so that an electric potential difference between an electric potential of the sample and an electric potential of an inner wall of the plasma processing chamber is reduced to an electric potential difference within a predetermined range during interruption of plasma discharge. | 01-28-2016 |
20160025758 | ANALYZER AND AUTOMATIC ANALYZER - To reduce the influence of air bubbles and dust in measuring scattered light beams on an automatic analyzer. A light source emits a light beam with a first wavelength | 01-28-2016 |
20160025692 | Analysis System - An analysis system is provided with: a storage unit that stores first information associating mass spectrometry result information with an analysis condition concerning ion mobility separation; and a control unit that determines, as a first analysis condition for an ion to be measured, the analysis condition associated with the mass spectrometry result information of the first information corresponding to the mass spectrometry result information of the ion to be measured. | 01-28-2016 |
20160018340 | METHOD FOR REVIEWING A DEFECT AND APPARATUS - detect a fine defect in reviewing To review a fine defect detected by another inspection apparatus, there is disclosed a method for reviewing a defect including a light capturing step that illuminates a sample with light under plural optical conditions, while varying only at least one of illumination conditions, sample conditions, or detection conditions, and detects plural lights scattering from the sample; a signal obtaining step that obtains plural signals based on the lights detected; and a processing step that discriminates a defect from noise according to a waveform characteristic quantity, an image characteristic quantity, or a value characteristic quantity created using the signals and derives the coordinates of defect. | 01-21-2016 |
20150371825 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus in which high frequency power to generate plasma supplied from a high frequency power supply is introduced into a processing chamber via a top plate and a shower plate and a member to be processed mounted on a stage electrode is processed, wherein a grounded spacer whose base material is a metal is installed between the shower. plate and an inner cylinder. | 12-24-2015 |
20150364290 | CHARGED PARTICLE BEAM APPLICATION DEVICE - The charged particle beam application device is provided with a charged particle source and an objective lens that converges charged particle beam generated by the charged particle source onto a sample. In this case, the charged particle beam application device is further provided with an aberration generating element installed between the charged particle beam source and the objective lens, a tilt-use deflector installed between the aberration generating element and the objective lens, a deflection aberration control unit for controlling the aberration generating element, a first electromagnetic field superposing multipole installed between the aberration generating element and the objective lens, and an electromagnetic field superposing multipole control unit for controlling the first electromagnetic field superposing multipole. The aberration generating element has such a function that when the charged particle beam is tilted relative to the sample by the tilt-use deflector, a plurality of resulting aberrations are cancelled with one another. Moreover, the first electromagnetic field superposing multipole has a function to change the orbit of a charged particle beam having energy different from that of the main charged particle beam in the charged particle beam. | 12-17-2015 |
20150357210 | METHOD FOR CONTROLLING PLASMA PROCESSING APPARATUS - There is provided a method for controlling a plasma processing apparatus that eliminates a preliminary study on a resonance point while maintaining a low contamination and a high uniformity even in multi-step etching. In a method for controlling a plasma processing apparatus including the step of adjusting a radio frequency bias current carried to a counter antenna electrode, the method includes the steps of: setting a reactance of a variable element to an initial value; detecting a bias current carried to the counter antenna electrode; searching for a maximum value of the detected electric current; and adjusting a value of the reactance of the variable element from the maximum value to the set value and then fixing the value. | 12-10-2015 |
20150357158 | Method for Pattern Measurement, Method for Setting Device Parameters of Charged Particle Radiation Device, and Charged Particle Radiation Device - An object of the present invention is to provide a method for pattern measurement and a charged particle radiation device in which a pattern formed by using a DSA technique can be very precisely measured and inspected. According to an aspect for achieving the object, a method for pattern measurement or a charged particle radiation device for realizing the measurement is proposed as follows. A charged particle is radiated to a polymer compound used for a self-organization lithography technique, and a specific polymer is considerably contracted as compared to the other polymer among multiple polymers forming the polymer compound. Thereafter, dimensions between multiple edges of the other polymer are measured, based on a signal obtained by scanning a region including the other polymer with the charged particle beam. | 12-10-2015 |
20150357156 | Charged-Particle Beam Device - The present invention explains a charged-particle beam device for the purpose of highly accurately measuring electrostatic charge of a sample in a held state by an electrostatic chuck ( | 12-10-2015 |
20150355140 | ELECTROCHEMICAL MEASUREMENT DEVICE - A flow cell for electrochemical measurement which introduces a sample solution, applies a voltage between a working electrode and a counter electrode to analyze the sample solution electrochemically, discharges the sample solution, and performs the electrochemical measurement continuously. The flow cell includes a unit which measures a value of a current flowing between electrodes at the time of applying a voltage, a unit which records the measured current value, a unit which compares the recorded current value with a current value set separately as a determination standard, and a unit which determines whether the current value measured at a cycle of a determination target and the recorded current value is normal by the comparison. | 12-10-2015 |
20150349245 | PLASMA PROCESSING METHOD - In a plasma processing method for plasma-etching magnetic layer by using a plasma processing device including a processing chamber in which a sample is plasma-processed, a dielectric window to seal an upper part of the processing chamber hermetically, an inductive coupling antenna disposed above the dielectric window, a radio-frequency power source to supply radio-frequency electric power to the inductive coupling antenna and a Faraday shield disposed between the inductive coupling antenna and the dielectric window, a deposit layer is formed on the plasma-etched magnetic layer by plasma processing while applying radio-frequency voltage to the Faraday shield after the magnetic layer is plasma-etched. | 12-03-2015 |
20150348750 | CHARGED PARTICLE BEAM DEVICE AND METHOD FOR ANALYZING DEFECT THEREIN - The present invention provides a charged particle beam device capable of automatically setting proper analysis positions for defects having various shapes. This charged particle beam device includes: an electron source for emitting an electron beam; a condenser lens for converging the electron beam emitted from the electron source; deflection means for changing a position of the electron beam converged by the condenser lens; an objective lens for constricting the electron beam changed by the deflection means so as to irradiate an inspection object therewith; a sample stage on which the inspection object is to be mounted; and defect analysis means for analyzing a defect based on information as to elements released from a defective portion of the inspection object by the irradiation with the electron beam, wherein the defect analysis means determines an analysis point based on a shape of the defect from among defect areas decided as one defect by the defect analysis means. | 12-03-2015 |
20150332445 | DEFECT OBSERVATION METHOD AND DEFECT OBSERVATION DEVICE - The purpose of the present invention is to easily extract, from samples to be observed, defect candidates that can be labeled as a defect or “nuisance” (a part for which a manufacturing tolerance or the like is erroneously detected) and to allow parameters pertaining to observation processing to be easily adjusted. This defect observation method comprises: an imaging step to image, on the basis of defect information from an inspection device, an object to be inspected and obtain a defect image and a reference image corresponding to the defect image; a parameter determining step to determine a first parameter to be used in the defect extraction by using a first feature set distribution acquired from the reference image and the defect image captured in the imaging step and a second feature net distribution acquired from the reference image; and an observing step to observe using the first parameter determined in the parameter determining step. The present invention can be applied to a method of observing defects generated during the manufacturing of semiconductor wafers. | 11-19-2015 |
20150311040 | PLASMA PROCESSING APPARATUS - In a plasma processing apparatus including a processing chamber, a dielectric window for hermetically sealing the upper portion of the processing chamber, an induction antenna deployed above the dielectric window, a Faraday shield unit, and a control apparatus for controlling a first radio-frequency power source for supplying a radio-frequency power to the induction antenna, and a second radio-frequency power source for supplying a radio-frequency power to the Faraday shield unit, the Faraday shield unit includes a first Faraday shield having a first element, and a second Faraday shield having a second element deployed at a position adjacent to the first element, the control apparatus applying a time modulation to the radio-frequency powers that are respectively supplied to the first element and the second element, the phase of the first-element-supplied and time-modulated radio-frequency power being different from the phase of the second-element-supplied and time-modulated radio-frequency power. | 10-29-2015 |
20150302568 | Defect Observation Method and Defect Observation Device - Cases in which defects are analyzed in a manufacturing process stage in which a pattern is not formed or in a manufacturing process in which a pattern formed on a lower layer does not appear in the captured image are increasing. However, in these cases, there is a problem of not being able to synthesize a favorable reference image and failing to detect a defect when a periodic pattern cannot be recognized in the pattern. In the present invention, a defect occupation rate, which is the percentage of an image being inspected occupied by a defect region, is found, it is determined whether the defect occupation rate is higher or lower than a threshold, and, in accordance with the determination results, it is determined whether to create, as the reference image, an image comprising pixels having the average luminance value of the luminance values of a plurality of pixels contained in the image being inspected. In particular, when the defect occupation rate is low, an image comprising pixels having the average luminance value of the luminance values of a plurality of pixels contained in the image being inspected is used as the reference image. | 10-22-2015 |
20150294833 | CHARGED PARTICLE BEAM APPARATUS - In order to provide a charged particle beam apparatus capable of high resolution measurement of a sample at any inclination angle, a charged particle beam apparatus for detecting secondary charged particles ( | 10-15-2015 |
20150293134 | AUTOMATIC ANALYZER - An automatic analyzer achieves both restraining unnecessary usage of a consumable supply and reducing burdens on an operator in a re-execution processing in a case where pipe functions are suspended/stopped, and is capable of completely efficiently performing an analysis preparation processing or an analysis terminating processing. In the automatic analyzer, a storage unit stores information on pipe functions, and information on re-execution setting for setting a re-execution maintenance item from which re-execution is started with respect to a suspended maintenance item if pipe functions of a plurality of maintenance items are suspended halfway, and a computer sequentially executes the plurality of maintenance items, based on the information on pipe functions, and re-executes maintenance from the re-execution maintenance item associated with a suspended maintenance item, based on the suspended maintenance item and the information on re-execution setting, if the pipe functions of the plurality of maintenance items are suspended halfway. | 10-15-2015 |
20150290645 | REAGENT CONTAINER AND AUTOMATIC ANALYSIS APPARATUS - A reagent container used in an automatic analysis apparatus capable of preventing reagent in the reagent container from spattering out of the reagent container even when the reagent container with large capacity is rotated at a high speed and an automatic analysis apparatus using the reagent container are provided. A reagent container | 10-15-2015 |
20150285627 | OVERLAY ERROR MEASURING DEVICE AND COMPUTER PROGRAM FOR CAUSING COMPUTER TO MEASURE PATTERN - The purpose of the present invention is to provide an overlay error measuring device which measures an overlay error with high accuracy even when a lower layer pattern is disposed under a thin film and a sufficient signal amount cannot be ensured. The present invention proposes an overlay error measuring device provided with an arithmetic processing unit for measuring a pattern formed on a sample on the basis of a signal waveform obtained by a charged particle beam device. The arithmetic processing unit finds a correlation with the signal waveform using a partial waveform obtained on the basis of partial extraction of the signal waveform, forms a correlation profile indicating the correlation, and measures an overlay error using the correlation profile. | 10-08-2015 |
20150279624 | PLASMA PROCESSING APPARATUS - The plasma processing apparatus includes: a processing chamber disposed inside a vacuum vessel; a first high-frequency power supply outputting a first high-frequency power for supplying an electric field to generate a plasma for use in processing a sample to be processed inside the processing chamber; a sample stage disposed inside the processing chamber with the sample placed on an upper surface thereof; a second high-frequency power supply intermittently outputting a second high-frequency power for generating a bias potential to an electrode disposed inside the sample stage and capable of variably adjusting the output time; and a function to adjust operation of the plasma processing apparatus using a result of detection of a temporal change in waveform of current or voltage in a transient state of the second high-frequency power in synchronism with start of the intermittent output of the second high-frequency power. | 10-01-2015 |
20150270148 | ETCHING APPARATUS - An etching apparatus including a processing chamber, a supply unit for reactive species, and a lamp for vacuum-ultraviolet light irradiation is prepared. In the etching apparatus, etching can be performed by repeating a first step of adsorbing the reactive species to a surface of a wafer to form byproducts, a second step of irradiating the surface of the wafer with vacuum-ultraviolet light from the lamp for vacuum-ultraviolet light irradiation, to desorb the byproducts, and a third step of exhausting the desorbed byproducts. | 09-24-2015 |
20150253250 | Luminescence Measuring Device - The present invention relates to luminescence detection with respect to a substance contained in a sample. In particular, it relates to a weak luminescence detection device adapted to detect chemiluminescence and bioluminescence of the substance contained in the sample with high sensitivity and high precision. | 09-10-2015 |
20150248944 | ABERRATION CORRECTOR AND CHARGED PARTICLE BEAM APPARATUS USING THE SAME - Provided are an aberration corrector that reduces irregularity of a magnetic field of a multipole to obtain an image of high resolution and a charged particle beam apparatus using the same. The aberration corrector includes a plurality of magnetic field type poles, a ring that magnetically connects the plurality of poles with one another and an adjustment member disposed between the pole and the ring to adjust a spacing between the pole and the ring per pole. | 09-03-2015 |
20150243486 | PLASMA PROCESSING APPARATUS - In a plasma processing apparatus including an upper electrode arranged above a sample stage on which a sample to be processed in a processing chamber is mounted to supply an electric field, and a high frequency power supply to output first high frequency power to form the electric field to the upper electrode, an insulating layer has an impedance smaller than the impedance of the feeding path for bias or the feeding path for electrostatic chuck and a current of the first high frequency power flows through a circuit that passes through the conductive plate and a member constituting an inner sidewall surface of the processing chamber from the upper electrode via the top surface of the sample stage to return to the high frequency power supply. | 08-27-2015 |
20150228443 | CHARGED PARTICLE BEAM APPARATUS - A charged particle beam apparatus includes a charged particle beam source which irradiates a sample with a charged particle beam, an electromagnetic lens, a lens control electric source for controlling strength of a convergence effect of the electromagnetic lens; and a phase compensation circuit which is connected to the lens control electric source in parallel with the electromagnetic lens, and controls a lens current at the time of switching the strength of the convergence effect of the electromagnetic lens such that the lens current monotonically increases or monotonically decreases. | 08-13-2015 |
20150221518 | DRY ETCHING METHOD - In the present invention, a dry etching method for plasma etching a second laminated film in which a first laminated film in which a silicon-containing film and a silicon dioxide film are laminated is laminated in plurality and an inorganic film arranged over the second laminated film, includes etching the inorganic film and the second laminated film by a mixed gas of an NF | 08-06-2015 |
20150219680 | AUTOMATIC ANALYZER - Provided is an automatic analyzer capable of detecting not only clogging and air suction of the dispensation probe but also a decrease in the dispensation quantity caused by a bubble film, air bubbles or a highly viscous sample. Each of a sample/reagent suction operation time and a sample/reagent discharge operation time of a probe is segmented into multiple time sections. For each of the time sections determined by the segmentation, a parameter is calculated by applying a detected pressure waveform to an approximation formula. For each of the time section, the presence/absence of a dispensation abnormality is judged by comparing the calculated parameter with a parameter in cases of normal dispensation. An automatic analyzer capable of judging the presence/absence of an abnormality specific to each time section and making abnormality judgments difficult for conventional techniques can be realized. | 08-06-2015 |
20150214083 | PLASMA PROCESSING APPARATUS - In a plasma processing apparatus, an additional viewing window is disposed between an infrared temperature sensor and a view window, and the additional viewing window is cooled to be retained at room temperature (20° C. to 25° C.), to reduce and to stabilize electromagnetic waves emitted from the viewing window. By correcting the value of the electromagnetic waves, the measurement precision of the temperature monitor is increased and it is possible to measure and to control the dielectric window temperature in a stable state. | 07-30-2015 |
20150214000 | DEFECT OBSERVATION SYSTEM AND DEFECT OBSERVATION METHOD - When contamination or local electrification is generated during acquisition of a low-magnification image, if a high-magnification image contains both a portion in which the contamination or local electrification is generated and a portion in which the contamination or local electrification is not generated, a region whose image quality has changed due to the contamination or local electrification is erroneously recognized as a defect. Thus, defect detection fails or it may be impossible to correctly determine the feature quantity of a defect. The invention provides a defect observation system that acquires sample images at a low magnification and a high magnification, and sets the position or size of the field of view of the high-magnification image or the electron beam irradiation range during acquisition of the low-magnification image no that the image acquired at the high magnification does not contain the outer edge of the image acquired at the low magnification. | 07-30-2015 |
20150212019 | PATTERN INSPECTION DEVICE AND PATTERN INSPECTION METHOD - Provided is a pattern inspection device for accurately simulating an electron beam image of a circuit pattern on a wafer from design data, and implementing high-precision defect detection based on the comparison between the simulated electron beam image and a real image. A pattern inspection device comprises: an image capturing unit for capturing an electron beam image of a pattern formed on a substrate; a simulated electron beam image generation unit for generating a simulated electron beam image using a parameter indicating the characteristics of the electron beam image on the basis of design data; and an inspection unit for comparing the electron beam image of the pattern, which is the image captured by the image capturing unit, and the simulated electron beam image generated by the simulated electron beam image generation unit, and inspecting the pattern on the substrate. | 07-30-2015 |
20150206728 | Mass Spectrometer and Method - A measurement state in a mass spectrometer device is determined so that the measurement method for the next round of measurement can be automatically determined. The mass spectrometer device ( | 07-23-2015 |
20150206705 | MEMBER FOR CHARGED PARTICLE BEAM DEVICE, CHARGED PARTICLE BEAM DEVICE AND DIAPHRAGM MEMBER - A member for a charged particle beam device ( | 07-23-2015 |
20150199583 | Matching Process Device, Matching Process Method, and Inspection Device Employing Same - An inspection device that performs pattern matching on a searched image performs matching between a template image of an inspection object and the searched image by using: a feature region extraction process unit that extracts a feature quantity from the template image acquired for learning; a feature quantity extraction process unit that extracts a feature quantity from the searched image acquired for learning; a mutual feature quantity calculation process unit that calculates a mutual feature quantity of the template image and the searched image from the feature quantity extracted from the template image and the feature quantity extracted from the searched image; a learning process unit that calculates, using a plurality of the mutual feature quantities, a discrimination boundary surface that determines matching success or failure; a process unit that calculates a plurality of the mutual feature quantities from an image acquired from the inspection object; and the plurality of mutual feature quantities and the discrimination boundary surface. Thus, an inspection device can be provided that outputs an accurate matching position in template matching even when there is a large apparent image discrepancy between the template and the searched image. | 07-16-2015 |
20150198525 | AUTOMATIC ANALYZER - To be adapted to various types of latex reagents for detecting scattered light and thereby measuring agglutination reactions with high sensitivity while sufficiently ensuring integration time. To be adapted to various types of latex particles of different particle sizes, a plurality of light receivers are arranged in a plane perpendicular to the direction of cell movement by rotation of a cell disk. To ensure sufficient integration time, the angle between the optical axis of the irradiation light and each of a plurality of optical axes of scattered light viewed from above the cell is made equal to or less than 17.7° including a mounting error. | 07-16-2015 |
20150194327 | VACUUM PROCESSING SYSTEM AND VACUUM PROCESSING METHOD OF SEMICONDUCTOR PROCESSING SUBSTRATE - A vacuum processing system of a semiconductor processing substrate and a vacuum processing method using the same comprises an atmospheric transfer chamber having a plurality of cassette stands for transferring a wafer, a lock chamber for storing the wafer transferred from the atmospheric transfer chamber, a first vacuum transfer chamber to which the wafer from the lock chamber is transferred, a transfer intermediate chamber connected to the first vacuum transfer chamber, a second vacuum transfer chamber connected to the transfer intermediate chamber, at least one vacuum processing chamber connected to the first vacuum transfer chamber, and two or more vacuum processing chambers connected to a rear side of the second vacuum transfer chamber, wherein the number of vacuum processing chambers connected to the first vacuum transfer chamber is smaller than the number of vacuum processing chambers connected to the second vacuum transfer chamber, or the number of use of vacuum processing chambers connected to the first vacuum transfer chamber is restricted to one. | 07-09-2015 |
20150194315 | PLASMA ETCHING METHOD - A plasma etching method for plasma etching a film to be etched to a size smaller than a prescribed size using a mask patterned to the prescribed size performs etching on the film to be etched to the size smaller than the prescribed size while forming a protection film on side walls of the film to be etched. | 07-09-2015 |
20150184227 | NUCLEIC ACID ANALYSIS DEVICE, METHOD FOR PRODUCING SAME, AND NUCLEIC ACID ANALYZER - Disclosed is a technique for binding microparticles to patterned bonding pads of a metal (e.g., gold) formed on a support. The microparticles each carry a nucleic acid synthetase or DNA probe immobilized thereon for capturing a nucleic acid sample fragment. The technique involves forming, on a support surface, a film having a thickness equivalent to that of the bonding pads; controlling the size of microparticles with respect to the size of bonding pads; and thereby immobilizing microparticles each bearing a single nucleic acid sample fragment to the bonding pads in a one-to-one manner in a grid form. This allows high-density regular alignment and immobilization of many types of nucleic acid fragment samples on a support and enables high-throughput analysis of nucleic acid samples. Typically, immobilization of microparticles at 1-micrometer intervals easily provides a high density of 10 | 07-02-2015 |
20150182877 | ANALYSIS DEVICE - Provided is an analyzer performing solid-phase extraction of a measurement component (i.e., component to be measured) in a sample solution while decreasing an amount of waste generated and reducing a running cost. The analyzer includes: a solid-phase extraction container having a body part to receive a sample solution containing a measurement component of analytical target and a discharge passage to discharge the sample solution. Herein, the discharge passage is to be filled with a solid-phase extraction material for subjecting the measurement component to solid-phase extraction. The analyzer further includes a supplying mechanism for a solid-phase extraction material; a filter supplying mechanism; a determining mechanism for filling position; a discharging mechanism for discharging the filter and the solid-phase extraction material after the solid-phase extraction of the measurement component; and a container cleaning mechanism for cleaning the solid-phase extraction container from which the solid-phase extraction material is removed. | 07-02-2015 |
20150179394 | Charged Particle Device - A preferred aim of the present invention is to provide a charged particle beam device having a high differential exhaust performance while maintaining a large dynamic range of an irradiation current by effectively arranging an aperture for differential pumping ( | 06-25-2015 |
20150179387 | CHARGED PARTICLE BEAM GENERATING APPARATUS, CHARGED PARTICLE BEAM APPARATUS, HIGH VOLTAGE GENERATING APPARATUS, AND HIGH POTENTIAL APPARATUS - An instrument producing a charged particle beam according to the present invention is provided with: a charged particle source; a plurality of first electrodes disposed along a direction of irradiation of charged particles from the charged particle source; a plurality of insulation members disposed between the first electrodes; and a housing mounted around the plurality of first electrodes. The housing is formed from an insulating solid material, and includes a plurality of second electrodes disposed at positions in proximity to the plurality of first electrodes. At least one of the plurality of second electrodes is electrically connected to at least one of the plurality of first electrodes, each of the plurality of second electrodes having the same potential as the potential of the proximate one of the first electrodes. | 06-25-2015 |
20150177267 | SAMPLE TRANSPORT APPARATUS - Proposed is a sample transport apparatus including at least one transport line stage including first and second transport lines each configured to transport sample holders each capable of holding at least one sample along a side wall of a housing along a long-side direction, a drive mechanism configured to transport the sample holders along the first and second transport lines, and wires accommodated in the housing and connected to at least the drive mechanism, in which the first transport line and the second transport line of the transport line stage are arranged in parallel along a long-side side face of the housing, and a first distance between the first transport line and the long-side side face that is adjacent the first transport line is shorter than a second distance between the first transport line and the second transport line. | 06-25-2015 |
20150175316 | TRANSPORT LINE COVER - A transport line cover with excellent workability that can be operated by an operator even with one hand. Proposed is a transport line cover that includes a cover body adapted to cover an opening at a top of a sample transport apparatus, the sample transport apparatus accommodating a plurality of transport lines that extend in one direction; and a first groove formed on an upper face of the cover body, the first groove extending from one short side to another short side of the cover body. A lower end of a long-side side face of the cover body is located at a level below a bottom face of the first groove. | 06-25-2015 |
20150160251 | Automatic Analysis Apparatus and Sample Measuring Method - The present invention makes it possible to decide an optimum photometer between a light-scattering photometer and an absorptiometer in accordance with a concentration range, and materialize an automatic analysis apparatus capable of improving detection sensitivity. A standard solution is measured multiple times at a normal calibration and a calibration curve is created (Step S | 06-11-2015 |
20150156856 | HEAT TREATMENT APPARATUS - A heat treatment apparatus includes a heat treatment chamber to conduct heat treatment of a heated sample, a planar first electrode disposed in the heat treatment chamber, a planar second electrode to create plasma in a space between the first and second electrodes and to heat the heated sample, a radio-frequency power source to supply the first electrode with radio-frequency power to create the plasma, and a sample stage opposing the first electrode with the second electrode placed between the first electrode and the sample stage, to mount thereon the heated sample, wherein the first electrode is lower in thermal emissivity than the second electrode. | 06-04-2015 |
20150154145 | DATA PROCESSING METHOD, DATA PROCESSING APPARATUS AND PROCESSING APPARATUS - The present invention is a data processing apparatus including a data input/output device for receiving data, a storage for storing the data received by the data input/output device, a data processing program storage for storing a data processing program that includes the steps of calculating, using a double exponential smoothing method, a first predicted value that is a predicted value of smoothed data and a second predicted value that is a predicted value of the gradient of the smoothed data, and calculating, using a double exponential smoothing method in which the second predicted value is set as input data, a third predicted value that is a predicted value of smoothed data and a fourth predicted value that is a predicted value of the gradient of the smoothed data, and a data calculation processing apparatus for performing the data processing under the data processing program. | 06-04-2015 |
20150147230 | AUTOMATIC ANALYSIS APPARATUS - A configuration of detecting light from the front face of a light source is the best for confirming the variation of a light quantity, but when a plurality of light sources are present, as many detectors for checking a light quantity as the light sources are necessary and the apparatus configuration becomes complex. In the present invention, a detector for checking a light source light quantity is installed in a reaction container transfer mechanism used commonly for a plurality of detection sections, and the light quantities of light sources are checked with the detector. | 05-28-2015 |
20150146200 | DEFECT INSPECTION DEVICE AND DEFECT INSPECTION METHOD - To detect an infinitesimal defect, highly precisely measure the dimensions of the detect, a detect inspection device is configured to comprise: a irradiation unit which irradiate light in a linear region on a surface of a sample; a detection unit which detect light from the linear region; and a signal processing unit which processes a signal obtained by detecting light and detecting a defect. The detection unit includes: an optical assembly which diffuses the light from the sample in one direction and forms an image in a direction orthogonal to the one direction; and a detection assembly having an array sensor in which detection pixels are positioned two-dimensionally, which detects the light diffused in the one direction and imaged in the direction orthogonal to the one direction, adds output signals of each of the detection pixels aligned in the direction in which the light is diffused, and outputs same. | 05-28-2015 |
20150136979 | Charged Particle Beam Device - When a signal electron is detected by energy selection by combining and controlling retarding and boosting for observation of a deep hole, etc., the only way for focus adjustment is to use a change in magnetic field of an objective lens. However, since responsiveness of the change in magnetic field is poor, throughput reduces. A charged particle beam device includes: an electron source configured to generate a primary electron beam; an objective lens configured to focus the primary electron beam; a deflector configured to deflect the primary electron beam; a detector configured to detect a secondary electron or a reflection electron generated from a sample by irradiation of the primary electron beam; an electrode having a hole through which the primary electron beam passes; a voltage control power supply configured to apply a negative voltage to the electrode; and a retarding voltage control power supply configured to generate an electric field, which decelerates the primary electron beam, on the sample by applying the negative voltage to the sample, wherein the charged particle beam device performs focus adjustment while an offset between the voltage applied to the electrode and the voltage applied to the sample is being kept constant. | 05-21-2015 |
20150136976 | OVERLAY ERROR MEASURING DEVICE AND COMPUTER PROGRAM - The purpose of the present invention is to provide an overlay error measuring device for correcting a pattern displacement other than an overlay error to thereby achieve high-precision overlay error measurement. To accomplish the abovementioned purpose, the present invention proposes an overlay error measuring device which measures a dimension between a plurality of patterns belonging to different layers using a signal obtained by a charged particle beam device, and when measuring the dimension, corrects an amount corresponding to a pattern shift due to an optical proximity effect and measures the dimension between the plurality of patterns. | 05-21-2015 |
20150131087 | INSPECTION SYSTEM - To improve sensitivity of a defect inspection, it is required to decrease influence of excessive diffraction from a spatial filter. Further, it is preferable to secure signal intensity from defects and particles as much as possible, while the influence of the excessive diffraction is decreased as much as possible. The present invention is characterized in setting a width of a spatial filter surface such that an unnecessary image caused by diffraction, that is, an intensity of the excessive diffraction is sufficiently small with respect to an intensity of a desired image. In the present invention, an SN ratio that is an index for deciding a width of the spatial filter is calculated from a region subjected to the influence of the excessive diffraction in an inspection image, and a width of a shield unit of the spatial filter is set so as to maximize the SN ratio. | 05-14-2015 |
20150124077 | CHARGED PARTICLE BEAM ADJUSTMENT ASSISTANCE DEVICE AND METHOD - A charged particle beam adjustment assistance device that can assist work to adjust a charged particle beam apparatus having a three-dimensional observing function and reduce human labor and man-hours required for adjustment value inputting is provided. | 05-07-2015 |
20150109434 | INSPECTION DEVICE AND IMAGE CAPTURE ELEMENT - An imaging device includes multiple sensor pixels that are arranged in a predetermined direction, each sensor pixel having multiple sensor pixel borders defining an outer edge part of the sensor pixel, among which at least one of a pair of sensor pixel borders that are opposed in the arrangement direction is oblique to a passage direction of a defect image that is vertical to the predetermined direction. This can provide an inspection tool enabling high sensitivity inspection and/or having improved detection reproducibility of a defect. | 04-23-2015 |
20150108341 | MASS SPECTROMETER AND MASS SPECTROMETRY - A portable mass spectrometer that is carried to a sampling site to conduct analysis incorporates measures against erroneous operation. To prevent erroneous operation, when a measurement sample cannot be accurately analyzed because of contamination in the measurement sample, a criterion for aborting the sample measurement is provided and mass spectrometer control maintenance is performed. When urine is measured, the mass spectrometer detects the substances contained in the urine and automatically determines whether the sample is urine. The mass spectrometer then automatically selects an analysis condition specific to urine samples to make a measurement. Also with respect to sweat and saliva, the mass spectrometer similarly selects a specific analysis condition. The mass spectrometer automatically determines whether a sample, which is an internal standard sample contained in a sample case, is being measured on a measurement-by-measurement basis and automatically displays any error, interrupts the measurement, or carries out other processing. | 04-23-2015 |
20150108340 | SWITCH CIRCUIT, MASS SPECTROMETER, AND CONTROL METHOD FOR SWITCH CIRCUIT - To provide a switch circuit in which ON/OFF control can be realized even in a state where high voltage is not applied, and high voltage can be completely lowered to the ground. | 04-23-2015 |
20150102232 | IONIZATION METHOD, IONIZATION APPARATUS, AND MASS ANALYSIS SYSTEM - In order to achieve an ionization method of high robustness with a small carry-over or less crosstalk, an ionization method is disclosed. A method includes the steps of: joining an ionization unit to a tube; sucking the sample from a sample container into a sample holder of the ionization unit to hold the sample; moving the ionization unit holding the sample to near the ionization unit using an ionization unit drive unit; and applying a voltage to the ionization unit using a power supply to ionize the sample by electrostatically spraying the sample from the holding unit. | 04-16-2015 |
20150099368 | DRY ETCHING METHOD - In a dry etching method for isotropically etching each of SiGe layers selectively relative to each of Si layers in a laminated film composed of the Si layers and SiGe layers alternately and repeatedly laminated, the each of the SiGe layers is plasma-etched with pulse-modulated plasma using NF | 04-09-2015 |
20150083328 | ANALYSIS METHOD AND SEMICONDUCTOR ETCHING APPARATUS - There is provided a method of analyzing data obtained from an etching apparatus for micromachining a wafer using plasma. This method includes the following steps: acquiring the plasma light-emission data indicating light-emission intensities at a plurality of different wavelengths and times, the plasma light-emission data being measured under a plurality of different etching processing conditions, and being obtained at the time of the etching processing, evaluating the relationship between changes in the etching processing conditions and changes in the light-emission intensities at the plurality of different wavelengths and times with respect to the wavelengths and times of the plasma light-emission data, and identifying the wavelength and the time of the plasma light-emission data based on the evaluation result, the wavelength and the time being to be used for the adjustment of the etching processing condition. | 03-26-2015 |
20150076349 | CHARGED PARTICLE RADIATION APPARATUS - A charged particle radiation apparatus includes a control device that switches between a first charged particle beam and a second charged particle beam, the first charged particle beam being scanned to acquire an image and a waveform signal, the second charged particle beam being scanned over a sample before the scan of the first charged particle beam and used to charge the sample more than the first charged particle beam; wherein the control device is configured to acquire at least one of signal waveform data and image data about a pattern formed on the sample in accordance with a scan performed on the sample by the second charged particle beam, and to stop, when the acquired data has proved to be indicative of a predetermined state, the scan of the second charged particle beam. | 03-19-2015 |
20150076347 | CHARGED PARTICLE BEAM APPARATUS - Provided is a charged particle beam apparatus or charged particle microscope capable of observing an observation target sample in an air atmosphere or a gas environment without making significant changes to the configuration of a conventional high vacuum charged particle microscope. In a charged particle beam apparatus configured such that a thin film ( | 03-19-2015 |
20150074523 | CHARGED PARTICLE BEAM APPARATUS, SPECIMEN OBSERVATION SYSTEM AND OPERATION PROGRAM - Skills of a novice user operating a charged particle beam apparatus can be improved. Provided are an image display device which displays operation items of an electron microscope on an operation screen, a storage device which stores information of assist buttons which display image state information acquired via a detector of the electron microscope such that the information of assist buttons is correspondent to image quality of the image thus acquired as well as to observation conditions composed of a combination of parameter setting values of the electron microscope, an operation program which analyzes the image quality of the image acquired via the detector, acquires the information of the assist buttons based on analytical results of the image quality of the image as well as current observation conditions, and makes the assist buttons be displayed on the predetermined part of the operation screen. | 03-12-2015 |
20150062581 | DEFECT INSPECTION APPARATUS AND DEFECT INSPECTION METHOD - A defect inspection apparatus includes: a seed light generator including a pulse signal generator that generates a pulse signal and a polarization modulator that outputs pulse light of any one of two polarization states orthogonal to each other in synchronization with the pulse signal output from the pulse signal generator; a wavelength converting unit including a branching mechanism that branches the pulse light output by the polarization modulator of the seed light generator using polarization and a converting unit that wavelength-converts the pulse light branched by the branching mechanism into beams of two different wavelengths, respectively; an illumination optical system that illuminates a surface of an inspected target material with the beams of the two different wavelengths converted by the wavelength converting unit; a detection optical system including a detecting unit that detects light generated by the beams of the two different wavelengths illuminated by the illumination optical system; and a signal processing system including a distributor that distributes a signal based on the light detected by the detecting unit of the detection optical system for each wavelength, on the basis of the pulse signal output from the pulse signal generator, and a defect determining unit that processes a signal based on the light distributed by the distributor and determines a defect. | 03-05-2015 |
20150060694 | CHARGED PARTICLE BEAM DEVICE - A charged particle beam device that appropriately maintains a throughput of the device for each of specimens different in a gas emission volume from each other is provided. A scanning electron microscope includes an electron source, a specimen stage, a specimen chamber, and an exchange chamber, and further includes a vacuum gauge that measures an internal pressure of the exchange chamber, a time counting unit that counts time taken when a measurement result by the vacuum gauge has reached a predetermined degree of vacuum, and an integral control unit that performs comparative calculation and determination based on a measurement result by the time counting unit and integral control based on a process flow. And, the integral control unit controls changing of a content of a subsequent process based on a shift of the degree of vacuum of the exchange chamber (for example, based on vacuum exhaust time in the exchange chamber when the specimen is in the exchange chamber or a variation of the degree of vacuum of the exchange chamber for a predetermined time interval when the specimen is in the exchange chamber). | 03-05-2015 |
20150053855 | CHARGED PARTICLE BEAM APPARATUS AND METHOD OF CORRECTING LANDING ANGLE OF CHARGED PARTICLE BEAM - A scanning electron microscope (SEM) is configured so that SEM images are acquired while scanning a pyramid pattern on a sample plane from four directions. Landing angle of the electron beam is calculated from these SEM images, which are then averaged, whereby inclination angle of the electron beam that is less influenced from scan distortion can be found. | 02-26-2015 |
20150048247 | SCANNING ION MICROSCOPE AND SECONDARY PARTICLE CONTROL METHOD - The present invention is provided to enable a detailed inspection of a specimen and preventing a distortion of an observation image even when a specimen containing an insulating material is partially charged. For a scanning ion microscope utilizing a gas field ionization ion source, a thin film is disposed between an ion optical system and a specimen, and an ion beam is applied to and transmitted through this thin film in order to focus a neutralized beam on the specimen. Furthermore, an electrode for regulating secondary electrons discharged from this thin film is provided in order to eliminate mixing of noises into an observation image. | 02-19-2015 |
20150041676 | SOUNDPROOF COVER FOR CHARGED-PARTICLE BEAM DEVICE, AND CHARGED-PARTICLE BEAM DEVICE - It is an object of the present invention to provide a noise-proof cover and a charged particle beam apparatus that realize both of suppression of an image failure caused by a specific frequency and a reduction in size. To attain the object, the present invention proposes a noise-proof cover that surrounds a charged particle beam apparatus, the noise-proof cover including a hollow section forming member that forms a cylindrical body having a wall surface extending along an inner wall of the noise-proof cover, one end of the cylindrical body formed by the hollow section forming member being opened and the other end of the cylindrical section being closed, and the charged particle beam apparatus surrounded by the noise-proof cover. | 02-12-2015 |
20150041650 | Gas Field Ionization Ion Source and Ion Beam Apparatus - In the case of a conventional gas field ionization ion source, it was not possible to carry out an analysis with a high S/N ratio and a high-speed machining process because the current amount of an ion beam is small. In view of these problems, the present invention has been devised, and its object is to obtain a large ion beam current, while suppressing a probability of damaging an emitter electrode. The present invention is characterized by a process in which an ion beam is emitted at least in two operation states including a first operation state in which, when a first extraction voltage is applied, with the gas pressure being set to a first gas pressure, ions are emitted from a first ion emission region at the apex of the emitter electrode, and a second operation state in which, when a second extraction voltage that is higher than the first extraction voltage is applied, with the gas pressure being set to a second gas pressure that is higher than the first gas pressure, ions are emitted from a second ion emission region that is larger than the first ion emission region. | 02-12-2015 |
20150041643 | PROCESSING APPARATUS AND METHOD USING A SCANNING ELECTRON MICROSCOPE - The present invention provides a processing apparatus using a scanning electron microscope, which includes the scanning electron microscope having an electron optical system radiating and scanning a focused electron beam on a sample placed on a stage to image the sample, and an image processing/control section which controls the scanning electron microscope and processes the image obtained by imaging with the scanning electron microscope. The electron optical system of the scanning electron microscope has image shift electrodes comprised of electrostatic electrodes, the image shift electrodes moving a position at which to apply the focused electron beam onto the sample with the stage stopped to thereby shift a region in which the sample is to be imaged. | 02-12-2015 |
20150036914 | METHOD FOR ESTIMATING SHAPE BEFORE SHRINK AND CD-SEM APPARATUS - In the present invention, at the time of measuring, using a CD-SEM, a length of a resist that shrinks when irradiated with an electron beam, in order to highly accurately estimate a shape and dimensions of the resist before shrink, a shrink database with respect to various patterns is previously prepared, said shrink database containing cross-sectional shape data obtained prior to electron beam irradiation, a cross-sectional shape data group and a CD-SEM image data group, which are obtained under various electron beam irradiation conditions, and models based on such data and data groups, and a CD-SEM image of a resist pattern to be measured is obtained (S | 02-05-2015 |
20150034835 | CHARGED PARTICLE BEAM APPARATUS - An embodiment is to provide a technique that continuously applies a certain amount of an electron beam to a sample by selecting a beam applied to the sample from an electron beam emitted from an electron source in a scanning electron microscope. A charged particle apparatus is configured, including: a mechanism that detects the distribution of electric current strength with respect to the emitting direction of an electron beam emitted from an electron source; a functionality that predicts a fluctuation of an electric current applied to a sample by predicting the distribution of the electric current based on the detected result; a functionality that determines a position at which a beam applied to the sample is acquired based on the predicted result; and a mechanism that controls a position at which a probe beam is acquired based on the determined result. | 02-05-2015 |
20150021294 | PLASMA PROCESSING APPARATUS AND OPERATIONAL METHOD THEREOF - A plasma processing apparatus includes: a detector configured to detect a change in an intensity of light emission from plasma formed inside a processing chamber; and a unit configured to adjust conditions for forming the plasma or processing a wafer arranged inside the processing chamber using an output from the detector, wherein the detector detects a signal of the intensity of light emission at plural time instants before an arbitrary time instant during processing, and wherein the adjusting unit removes the component of a temporal change of a long cycle of the intensity of light emission from this detected signal and detects the component of a short temporal change of the intensity of light emission, and adjusts the conditions for forming the plasma or processing a wafer arranged inside the processing chamber based on the short temporal change of the detected intensity of light emission. | 01-22-2015 |
20150017741 | PLASMA ETCHING METHOD - In a plasma etching method of plasma-etching a sample which has a first magnetic film, a second magnetic film disposed above the first magnetic film, a metal oxide film disposed between the first magnetic film and the second magnetic film, a second metal film disposed over the second magnetic film and forming an upper electrode, and a first metal film disposed below the first magnetic film and forming a lower electrode, the plasma etching method includes the steps of: a first process for etching the first magnetic film, the metal oxide film, and the second magnetic film by using carbon monoxide gas; and a second process for etching the sample by using mixed gas of hydrogen gas and inactive gas after the first process. In this case, the first metal film is a film containing therein tantalum. | 01-15-2015 |
20150016709 | Pattern Sensing Device and Semiconductor Sensing System - An object of the invention is to provide a pattern measuring device for generating appropriate reference pattern data while suppressing an increase in the manufacturing cost that would occur when manufacturing conditions are finely changed. A pattern measuring device has an arithmetic processing unit for measuring a pattern formed on a sample. The arithmetic processing unit, on the basis of signals obtained with a charged particle beam device, acquires or generates image data or contour line data on a plurality of circuit patterns created under different manufacturing conditions of a manufacturing apparatus, and generates reference data to be used for measurement of a circuit pattern from the image data or contour line data. | 01-15-2015 |
20150015957 | DIFFRACTION GRATING AND PRODUCTION METHOD THEREOF - The present invention has an object of providing a diffraction grating excellent in surface precision and allowing its miniaturization and weight reduction and a method for manufacturing the same. The present invention comprises: a glass substrate having a thickness of 0.5 mm to 8 mm; a resin-made microstructure body having an unevenness pattern and formed on one surface of the glass substrate; and a flat resin layer formed on the other surface of the glass substrate. Even if the glass substrate has surface precision of λ/2 or greater, the replica of the diffraction grating, in which the microstructure body is not influenced by the surface precision of the glass substrate and which is excellent in surface precision, can be manufactured by the flatness of the resin layer. In addition, since the glass substrate can be made thin, the miniaturization and weight reduction of the diffraction grating can be achieved. | 01-15-2015 |
20150014530 | CHARGED PARTICLE BEAM APPARATUS - Provided is a charged particle beam apparatus ( | 01-15-2015 |
20150014529 | CHARGED PARTICLE BEAM DEVICE - Provided is a charged particle beam device with high sensitivity, capable of detecting charged particles emitted from a sample at high resolution. An absorption current detector arranged to contact with the sample makes an absorption current generated in the sample by an irradiated charged particle beam flow through the detector, thereby to detect the current. The charged particle beam scans the sample and the charged particle beam device acquires an absorption current image. In case the absorption current detector is arranged separated from the sample, the absorption current detector detects the incident charged particle beam as a signal current dependent on an angle θ formed in a direction from the irradiation position on the sample toward the absorption current detector relative to at least one of the normal line direction of the front surface of the sample and the incident direction of the charged particle beam. | 01-15-2015 |
20150012243 | Semiconductor Evaluation Device and Computer Program - The present invention provides a semiconductor evaluation device for fabricating a suitable reference pattern utilized in comparison tests. The semiconductor evaluation device and computer program extract a process window in a more accurate range based on a two-dimensional evaluation of the pattern. In order to achieve the above described objects, the present invention includes a semiconductor evaluation device that measures the dimensions of the pattern formed over the sample based on a signal obtained by way of a charged particle beam device, selects a pattern whose dimensional measurement results satisfy specified conditions or exposure conditions when the pattern is formed, and forms synthesized contour data, by synthesizing contour data obtained from images of an identically shaped pattern in design data, and also a pattern formed under the selected exposure conditions or a pattern having a positional relation that is already known relative to the selected pattern. | 01-08-2015 |
20150010436 | AUTOMATED ANALYZER - To provide an automated analyzer adapted for accommodating a larger number of reagent cassettes to meet calls for increases in analytical throughput and in the number of analytical items, and thus using the accommodated reagent cassettes more efficiently. An automated analyzer body | 01-08-2015 |
20150009319 | Semiconductor Measurement Apparatus and Computer Program - One of the objects of the present invention is to provide a semiconductor measurement apparatus capable of obtaining a measurement result that appropriately reflects the deformation of a pattern even if plural causes for the deformation of the pattern exist together. In order to attain the above object, the semiconductor measurement apparatus is proposed in the following way. The semiconductor measurement apparatus is capable of measuring the dimensions between plural measurement points of different positions of the edge of a reference pattern and plural corresponding points of the circuit pattern of an electronic device, in which the corresponding points correspond to the plural measurement points. In addition, the semiconductor measurement apparatus is capable of measuring the spacings between the circuit pattern and the reference pattern, both of which exist in a predefined measurement area, selecting a second measured value aggregation from a first measured value aggregation comprised of measured values at plural points in the measurement area based on a predefined sampling condition, and calculating the measurement value based on the second measured value aggregation. | 01-08-2015 |
20150008121 | ION MILLING DEVICE - The present invention aims at providing an ion milling device that can set a high-precision processing area with a simple structure. In order to achieve the above object, there is proposed an ion milling device including a sample holder that holds a sample and a mask partially restricting irradiation of the sample with an ion beam, in which the sample holder includes a first contact surface that contacts with an end surface of the sample located on a passing orbit side of the ion beam, and a second contact surface that contacts with an end surface of the mask so that the mask is located at a position spaced apart from the ion beam more than the first contact surface. | 01-08-2015 |
20140377958 | PLASMA PROCESSING METHOD AND VACUUM PROCESSING APPARATUS - A plasma processing method embodying this invention is for applying plasma processing to a sample having a metal-containing film. This method includes the steps of applying plasma processing to the sample by using a mixture of halogen-containing gas and nitrogen gas, generating a plasma using a mixture of oxygen gas and inert gas in a plasma production chamber, which is different from a post-treatment chamber used for posttreatment of the plasma-processed sample, and performing posttreatment of the sample while at the same time transporting the generated plasma to the posttreatment chamber via a transfer path disposed between the plasma production chamber and the posttreatment chamber. | 12-25-2014 |
20140377132 | AUTOMATIC ANALYZER - An automatic analyzer includes a sample dispensing unit that dispenses a sample into a reaction vessel, a reagent dispensing unit that dispenses a reagent, a sample nozzle cleaning tank that cleans a nozzle of the sample dispensing unit, a reagent nozzle cleaning tank that cleans a nozzle of the reagent dispensing unit, a compressor that supplies compressed air, and cleaning water supply means that supplies cleaning water. The tanks each have an upper vent that allows a nozzle to have access for cleaning, a lower vent that drains the cleaning water, a cleaning water jet port that sprays the cleaning water to the nozzle, and a compressed air jet port that removes residual cleaning water left on the nozzle. The lower vent has an opening area wider than that of the upper vent. | 12-25-2014 |
20140373642 | SAMPLE PRETREATMENT SYSTEM THAT SUPPORTS MULTISYSTEM CONFIGURATION - A host system recognizes a sample pretreatment system at which a primary sample has first arrived and records the information, if multiple containers containing the primary sample are input. Upon issuing an analysis request to the sample pretreatment system, the host system determines whether the primary sample (sample bearing the same barcode for sample identification) is input to a system different from the system to which the sample was input for the first time and, if that is the case, then determines that “the sample is input to the wrong system” and issues a “do-nothing request” (request to do nothing) so that an aliquoting operation will not be performed. Given the “do-nothing request” from the host system, the sample pretreatment system does not prepare any aliquot sample and places the input sample onto a tray in a predetermined position. | 12-25-2014 |
20140363977 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - In a plasma processing apparatus including a first radio-frequency power supply which supplies first radio-frequency power for generating plasma in a vacuum chamber, a second radio-frequency power supply which supplies second radio-frequency power to a sample stage on which a sample is mounted, and a matching box for the second radio-frequency power supply, the matching box samples information for performing matching during a sampling effective period which is from a point of time after elapse of a prescribed time from a beginning of on-state of the time-modulated second radio-frequency power until an end of the on-state and maintains a matching state attained during the sampling effective period from after the end of the on-state until a next sampling effective period. | 12-11-2014 |
20140361167 | SCANNING ELECTRON MICROSCOPE - To provide a low acceleration scanning electron microscope that can discriminate and detect reflected electrons and secondary electrons even with a low probe current, this scanning electron microscope is provided with an electron gun ( | 12-11-2014 |
20140356964 | AUTOMATIC ANALYZER AND METHOD FOR DETECTING MEASUREMENT VALUE ABNORMALITIES - An automatic analyzer detects measurement value abnormalities stemming from reaction process anomalies caused by the presence of foreign matter or bubbles. It is determined whether the results of concentration calculation based on light quantity data from multiple target detectors each fall within an applicable determination range. If the results fall within the determination range, an average value of the results of concentration calculation with the target detectors is calculated, and if not, an out-of-determination-range flag is given. A default fluctuation range is retrieved regarding the average value of the results of concentration calculation. The fluctuation range of the results of concentration calculation with the multiple target detectors is calculated. If the fluctuation range is found to fall within the default range, the results of concentration calculation are output to a display; and if outside the default range, a reexamination request is displayed with an added measurement value abnormality alarm. | 12-04-2014 |
20140356233 | AUTOMATIC ANALYSIS DEVICE AND REAGENT PROCESSING METHOD IN AUTOMATIC ANALYSIS DEVICE - An automatic analyzer is capable of performing a preparation process on a reagent used to measure a highly urgent test item even during analysis operation, and is configured as follows. If there is no parameter for the analysis item regarding a new reagent, the parameters are downloaded. If the priority of reagent preparation is “high,” a sample pipetting scheduling process is temporarily stopped. If the priority of reagent preparation is not “high,” it is determined whether a waiting time limit has been exceeded, and if it has, the sample pipetting scheduling process is stopped temporarily, reagent preparation scheduling is performed, and the sample pipetting scheduling process is resumed. If it is determined that the waiting time limit has not been exceeded, if the priority of reagent preparation is “medium,” and if the reagent preparation mechanism is found available, then reagent preparation scheduling is performed. | 12-04-2014 |
20140353499 | SAMPLE HOLDER FOR ELECTRON MICROSCOPE - A sample holder for an electron microscope has multiple sample stands, can allow at least one sample stand to move, and enables multiple samples for a transmission electron microscope to be prepared by a focused ion beam apparatus. A holder tip opening is provided in a tip of the sample holder. A back end of the sample holder has a knob, a rolling mechanism, a coarse adjustment mechanism, and a connector. By pressing the knob, fixation of the rolling mechanism is canceled, and the back end from the rolling mechanism and the tip of the sample holder will rotate. This rolling mechanism enables arrangement of the samples to be rotated in both the observing of a sample and the preparing of a sample for a transmission electron microscope with the focused ion beam apparatus. Moreover, the sample stand is movable by the coarse adjustment mechanism and the fine adjustment mechanism. | 12-04-2014 |
20140353151 | CHARGED PARTICLE BEAM IRRADIATION APPARATUS - The purpose of the present invention is to provide a charged particle beam irradiation apparatus of a relatively simple structure which performs cooling on a sample or a sample stage. An aspect of the present invention comprises: a charged particle source; a sample stage; and a driving mechanism that comprises a transmission mechanism which transmits a driving force to move the sample stage. The charged particle beam irradiation apparatus comprises a container capable of accommodating an ionic liquid ( | 12-04-2014 |
20140342386 | METHOD FOR MEASURING CELLS, AND REAGENT FOR CELL MEASUREMENT - A method and a means are provided, by which multiple types of cells can be simultaneously measured with high sensitivity by an ATP luminescence method. A method for measuring cells in a sample is provided, which comprises the steps of adding methanol to a sample suspected of containing viable cells to increase ATP within viable cells, extracting intracellular ATP, and causing extracted ATP to emit luminescence. | 11-20-2014 |
20140341461 | IMAGE PROCESSING APPARATUS, DISTORTION-CORRECTED MAP CREATION APPARATUS, AND SEMICONDUCTOR MEASUREMENT APPARATUS - Image processing apparatus includes: interpolation process image acquisition means for acquiring an interpolation process image of prescribed size which includes an interpolation point of an inputted image; Fourier transform means for subjecting the interpolation process image which is acquired with the interpolation process image acquisition means to Fourier transform; phase change means for changing, a phase of each value of the transformed interpolation process image which has been subjected to Fourier transform by the Fourier transform means, such that the interpolation point migrates to a desired nearby integer coordinate position; inverse Fourier transform means for subjecting the interpolation process image whose phase has been changed by the phase change means, to inverse Fourier transform; interpolation value determination means for adopting an interpolation point, a value of a pixel at the integer coordinate position, from the transformed interpolation process image subjected to inverse Fourier transform by the inverse Fourier transform means. | 11-20-2014 |
20140333923 | INSPECTION APPARATUS - When it is tried to detect a microscopic defect, it is desired that the width of the above-mentioned illuminated region in the minor axis direction should be short. In the related art, although an illuminated region is formed by converging light by some means, it is not easy to form an illuminated region with a narrower width. This is because various aberrations possessed by optical elements themselves used for convergence, aberrations possessed by other optical elements disposed on optical paths, assembly errors, and the like have undesired influence on the formation of linear illumination. In the related art, sufficient consideration has not been paid to the above points. The present invention is characterized in that it includes a system for changing the wavefront of light. | 11-13-2014 |
20140328459 | X-RAY INSPECTION DEVICE, INSPECTION METHOD, AND X-RAY DETECTOR - The X-ray inspection device includes: an X-ray source with a focal spot size greater than the diameter of a defect for irradiating a sample with X-rays; an X-ray TDI detector arranged near the sample and having long pixels in a direction parallel to the scanning direction of the sample for detecting the X-rays emitted by the X-ray source and passing through the sample as an X-ray transmission image; and a defect-detecting unit for detecting defects based on the X-ray transmission image detected by the X-ray TDI detector. | 11-06-2014 |
20140327897 | EXPOSURE DEVICE AND METHOD FOR PRODUCING STRUCTURE - In order to exposure interference fringes to photoresist and form a desired irregular pattern, it is necessary to know the cycle of the interference fringes in advance. In order to confirm the cycle of the interference fringes beforehand, conventional techniques include observing the formed irregular pattern with the use of a microscope or measuring a diffraction angle of incident light and repeating processes of exposure, development, and observation (measurement) while slightly changing incident angles of light fluxes for the formation of the interference fringes until a desired cycle is confirmed. These operations take considerable amount of time. The fact that it takes considerable amount of time to confirm the interference fringes has not been considered in the conventional techniques. Observation of a moire generated by a standard sample containing a fluorescent sample that can be repeatedly used and adjustment of the cycle of interference fringes reduce time for the adjustment. | 11-06-2014 |
20140319341 | CHARGED PARTICLE MICROSCOPE APPARATUS AND IMAGE ACQUISITION METHOD OF CHARGED PARTICLE MICROSCOPE APPARATUS - A charged particle microscope apparatus includes a radiation optical system that radiates a focused charged particle beam to an upper side of a sample provided with a pattern and scans the sample; a detection optical system that detects charged particles generated from the sample to which the charged particle beam has been radiated by the radiation optical system; and a processing unit that processes the charged particles detected by the detection optical system to obtain a charged particle image of the sample, estimates diffusion of the charged particles at any depth of the pattern of the sample, on the basis of information on a depth or a material of the pattern of the sample or radiation energy of the charged particle beam in the radiation optical system; corrects the obtained charged particle image using the estimated diffusion of the charged particles; and processes the corrected charged particle image. | 10-30-2014 |
20140318224 | HIGH-PRESSURE CONSTANT FLOW RATE PUMP AND HIGH-PRESSURE CONSTANT FLOW RATE LIQUID TRANSFER METHOD - A high-pressure constant flow rate pump transfers a solvent from a low-pressure side liquid transfer system even if a difference between mixing ratios is large when solvents are mixed during high-pressure gradient liquid transfer. A pressure detection value from a second pressure sensor and a pressure detection value from a fourth pressure sensor are compared with each other. If the pressure detection value P | 10-30-2014 |
20140314623 | AUTOMATIC ANALYSIS SYSTEM - There is provided an automatic analysis system that dispenses samples and reagents into a plurality of reaction vessels to cause reaction and to measure the liquid resulting from the reaction. The system implements a method of handling capped sample containers such as vacuum blood collection tubes along transfer routes. A sample container opening/closing mechanism is provided which removes the caps of the sample containers prior to sample dispensing and which closes the sample containers following sample dispensing using the same corresponding caps as before the dispensing. Also provided is an opening/closing mechanism that retains and manages the caps removed from the sample containers, as well as a transport unit capable of selecting one of the transport routes which fits the identified sample containers so as to close them with the fit caps. This invention thus provides a container opening/closing system that improves throughput of the sample collection process in conjunction with the automatic analysis system performing the sample container opening/closing process. | 10-23-2014 |
20140312246 | SAMPLE POSITIONING APPARATUS, SAMPLE STAGE, AND CHARGED PARTICLE BEAM APPARATUS - Provided is a sample positioning technology wherein micro-vibrations of a top table on which a sample is placed are suppressed such that the quality of an image to be observed or the precision of a measured dimension value can be improved. A sample positioning apparatus according to the present invention is provided with an active brake for stopping the top table, an inner frame which surrounds the active brake, an outer frame which surrounds the inner frame, and actuators for driving the active brake. The actuators, after driving the active brake to stop the top table with respect to a stage, press the outer frame to adjust the position of the top table. | 10-23-2014 |
20140311228 | LIQUID CHROMATOGRAPH APPARATUS AND LIQUID CHROMATOGRAPH ANALYSIS METHOD - An analysis method is achieved in which pressure variation resulting from sample injection or passage switching by an autosampler does not exert an influence on the control of a liquid transfer pump. The liquid chromatograph analysis method comprises the steps of: transferring two or more types of eluents while changing a mixing ratio between the eluents; adjusting an amount of the transferred liquid within a predetermined time in a passage for the eluent transferred; injecting a sample in the passage; supplying to a separation column the eluent into which the sample is injected; separating a target component in the sample; and detecting the target component thus separated. In this method, control is exercised so as to synchronize a liquid transfer cycle of the eluent with the sample injecting operation and to implement the sample injecting operation at a timing rather than the pressure obtaining time. | 10-23-2014 |
20140309120 | METHOD AND SUBSTRATE FOR NUCLEIC ACID AMPLIFICATION, AND METHOD AND APPARATUS FOR NUCLEIC ACID ANALYSIS - The present invention relates to a method for nucleic acid amplification, which enables clusters of amplified nucleic acid fragments to be sequenced by a sequencer to be formed at a high density and improves throughput of nucleic acid sequence analysis by amplifying the number of nucleic acids in the cluster to 10,000 molecules or more; and a method for nucleic acid amplification for enhancing read accuracy, which achieves a high cluster density and increases the number of the amplified fragments in the cluster by the steps of previously forming a pattern of primer DNAs on a base material and fixing bulky template DNA molecules synthesized from DNA samples thereon to induce amplification reaction. | 10-16-2014 |
20140305915 | HEAT TREATMENT APPARATUS - A heat treatment apparatus, for enabling stable plasma discharge, with preventing desorption of silicon from silicon carbonite suppressing an amount of discharge of thermions therefrom, comprises a treatment chamber for heating a heating sample therein, a plate-shaped upper electrode, being disposed in the treatment chamber, a plate-shaped lower electrode, facing to the upper electrode and for producing plasma between the upper electrode, and a gas supplying means for supplying a gas into the treatment chamber, wherein the upper electrode and the lower electrode are made of a base material of silicon carbonite, and each being covered by a carbon film around thereof. | 10-16-2014 |
20140302682 | METHOD AND APPARATUS FOR PLASMA PROCESSING - The present invention provides a plasma processing method that uses a plasma processing apparatus including a plasma processing chamber in which a sample is plasma processed, a first radio-frequency power supply that supplies a first radio-frequency power for generating plasma, and a second radio-frequency power supply that supplies a second radio-frequency power to a sample stage on which the sample is mounted, wherein the plasma processing method includes the steps of modulating the first radio-frequency power by a first pulse; and controlling a plasma dissociation state to create a desired dissociation state by gradually controlling a duty ratio of the first pulse as a plasma processing time elapses. | 10-09-2014 |
20140302679 | PHASE SHIFT MASK, METHOD OF FORMING ASYMMETRIC PATTERN, METHOD OF MANUFACTURING DIFFRACTION GRATING, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A technique of forming an asymmetric pattern by using a phase shift mask, and further, techniques of manufacturing a diffraction grating and a semiconductor device, capable of improving accuracy of a product and capable of shortening manufacturing time. In a method of manufacturing a diffraction grating by using a phase shift mask (in which a light shield part and a light transmission part are periodically arranged), light emitted from an illumination light source is transmitted through the phase shift mask, and a photoresist on a surface of a Si wafer is exposed by providing interference between zero diffraction order light and positive first diffraction order light which are generated by the transmission through this phase shift mask onto the surface of the Si wafer, and a diffraction grating which has a blazed cross-sectional shape is formed on the Si wafer. | 10-09-2014 |
20140299769 | SCANNING ELECTRON MICROSCOPE - To provide a scanning electron microscope that can detect reflected electrons of any emission angle, the scanning electron microscope, which obtains an image by detecting electrons from a sample ( | 10-09-2014 |
20140295672 | VACUUM PROCESSING APPARATUS AND OPERATING METHOD OF THE SAME - A vacuum processing apparatus including an atmospheric transfer chamber including on a front side a plurality of cassette stages on which cassettes having stored samples as processing objects are to be mounted, a first transfer chamber which is disposed via a lock chamber on a back side of the atmospheric transfer chamber and to which a sample decompressed to first pressure is transferred, a second transfer chamber which is disposed on a back side of the first transfer chamber and to which the sample is transferred via a relay chamber from the first transfer chamber, a first processing vessel which is coupled to the first transfer chamber and in which the sample is transferred under the first pressure, and a second processing vessel which is coupled to the second transfer chamber and in which the sample is transferred under the second pressure. | 10-02-2014 |
20140295583 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - In a plasma processing method and apparatus for processing a film to be processed contained in a film structure preliminarily formed on an upper surface of a wafer mounted in a processing chamber, by using plasma, a residual film thickness at an arbitrary time is calculated using a result of comparing detective differential waveform pattern data with actual differential waveform pattern data. The detective differential waveform pattern data is produced by using two basic differential waveform pattern data which respectively use, as parameters, residual thicknesses of the films to be processed in film structures having underlying films with different thicknesses and the wavelengths of the interference light. The detective waveform pattern data being preliminarily prepared prior to processing of the wafer. Determination is made as to whether or not an object of the processing has been reached by using the residual film thickness. | 10-02-2014 |
20140294555 | OPERATION METHOD FOR VACUUM PROCESSING APPARATUS - A method for operating a vacuum processing apparatus, the vacuum processing apparatus including: a plurality of cassette stands on which a cassette capable of housing a plurality of wafers therein can be placed; a plurality of vacuum processing vessels each having a processing chamber arranged therein, wherein the wafer is arranged and processed in the processing chamber; and at least one transport robot transporting the wafer on a transport path between either one of the plurality of cassettes and the plurality of vacuum processing vessels, the vacuum processing apparatus sequentially transporting in a predetermined transport order the plurality of wafers from either one of the plurality of cassettes to a predetermined one of the plurality of vacuum processing vessels and processing the plurality of wafers. The method includes a number determining step, a remaining-time determining step and a transport order skip step. | 10-02-2014 |
20140283534 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes: a refrigerating cycle including a refrigerant passage, a compressor, and a condenser, all of which are coupled in this order, and through which a refrigerant flows in this order, the refrigerant passage being disposed inside a sample stage and through which the refrigerant flows to serve as an evaporator; first and second expansion valves which are interposed between the condenser and the refrigerant passage and between the refrigerant passage and the compressor respectively in the refrigerating cycle; a vaporizer that is interposed between the second expansion valve and the compressor in the refrigerating cycle and which heats and vaporizes the refrigerant; and a controller which regulates opening and closing of the first and second expansion valves and regulates a refrigerant heat exchange amount of the condenser or vaporizer based on a refrigerant temperature between the condenser and the second expansion valve. | 09-25-2014 |
20140277626 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus including: a monitor device which monitors a process quantity generated at plasma processing; a monitor value estimation unit which has monitor quantity variation models for storing change of a monitor value of the process quantity in accordance with the number of processed specimens and which estimates a monitor value for a process of a next specimen by referring to the monitor quantity variation models; and a control quantity calculation unit which stores a relation between a control quantity for controlling the process quantity of the vacuum processing device and a monitor value and which calculates the control quantity based on a deviation of the estimated monitor value from a target value to thereby control the process quantity for the process of the next specimen. Thus, a process model indicating variation of the state of a process processing apparatus can be added to a control loop in such run-to-run control that process conditions are changed according to each wafer process, so that stable processed results can be obtained even when variation occurs in processes. | 09-18-2014 |
20140271359 | AUTOMATED ANALYZER - Stepped portions of a flow channel are reduced by completely fixing the channel that extends to the measuring unit, and reducing connections in the channel, thereby to suppress a disturbance in the flow of the liquid suctioned into the measuring unit. A means is provided so that the reaction solution and reagent suctioned will move towards the channel through which the liquids are suctioned. | 09-18-2014 |
20140268122 | DEFECT INSPECTION METHOD AND DEFECT INSPECTION DEVICE - A defect inspection method and device for irradiating a linear region on a surface-patterned sample mounted on a planarly movable table, with illumination light from an inclined direction relative to a direction of a line normal to the sample, next detecting in each of a plurality of directions an image of the light scattered from the sample irradiated with the illumination light, then processing signals obtained by the detection of the images of the scattered light, and thereby detecting a defect present on the sample; wherein the step of detecting the scattered light image in the plural directions is performed through elliptical lenses in which elevation angles of the optical axes thereof are different from each other, within one plane perpendicular to a plane formed by the normal to the surface of the table on which to mount the sample and the longitudinal direction of the linear region irradiated with the irradiation light, the elliptical lenses being formed of circular lenses having left and right portions thereof cut. | 09-18-2014 |
20140264018 | OBSERVATION SPECIMEN FOR USE IN ELECTRON MICROSCOPY, ELECTRON MICROSCOPY, ELECTRON MICROSCOPE, AND DEVICE FOR PRODUCING OBSERVATION SPECIMEN - The electrical charging by a primary electronic is inhibited to produce a clear edge contrast from an observation specimen (i.e., a specimen to be observed), whereby the shape of the surface of a sample can be measured with high accuracy. An observation specimen in which a liquid medium comprising an ionic liquid is formed in a thin-film-like or a webbing-film-like form on a sample is used. An electron microscopy using the observation specimen comprises: a step of measuring the thickness of a liquid medium comprising an ionic liquid on a sample; a step of controlling the conditions for irradiation with a primary electron on the basis of the thickness of the liquid medium comprising the ionic liquid; and a step of irradiating the sample with the primary electron under the above-mentioned primary electron irradiation conditions to form an image of the shape of the sample. | 09-18-2014 |
20140264017 | Transmission Electron Microscope, and Method of Observing Specimen - Provided is means which enables observation of the shape of a specimen as it is without deforming the specimen. Observation is made by allowing a specimen-holding member having an opening (for example, microgrid and mesh) to hold an ionic liquid and charging a specimen thereto, to allow the specimen to suspend in the ionic liquid. Furthermore, in the proximity of the specimen-holding member, a mechanism of injecting an ionic liquid (ionic liquid introduction mechanism) and/or an electrode are provided. When a voltage is applied to the electrode, the specimen moves or deforms in the ionic liquid. How the specimen moves or deforms can be observed. Furthermore, in the proximity of specimen-holding member, an evaporation apparatus is provided to enable charge of the specimen into the ionic liquid while evaporating. Furthermore, in the proximity of the specimen-holding member, a microcapillary is provided to charge a liquid-state specimen into the ionic liquid. Note that the specimen-holding member is designed to be rotatable. | 09-18-2014 |
20140262029 | SEMICONDUCTOR ETCHING APPARATUS AND ANALYZING APPARATUS - An etching apparatus calculates an emission intensity in the vicinity of each of a plurality of wavelengths, at which a specified element should emit light, from information indicating light emission measured by an optical emission spectroscope during etching processing and, if it is determined that the calculated emission intensity information and emission intensity information stored in a storage unit are similar, extracts a wavelength, corresponding to the calculated emission intensity, with the wavelength associated with the element. | 09-18-2014 |
20140253912 | DEFECT INSPECTION METHOD AND DEVICE FOR SAME - In defect scanning carried out in a process of manufacturing a semiconductor or the like, a light detection optical system comprising a plurality of photosensors is used for detecting scattered light reflected from a sample. The photosensors used for detecting the quantity of weak background scattered light include a photon counting type photosensor having few pixels whereas the photosensors used for detecting the quantity of strong background scattered light include a photon counting type photosensor having many pixels or an analog photosensor. In addition, nonlinearity caused by the use of the photon counting type photosensor as nonlinearity of detection strength of defect scattered light is corrected in order to correct a detection signal of the defect scattered light. | 09-11-2014 |
20140250339 | AUTOMATED ANALYSIS SYSTEM - The system includes an analyzer that analyzes a sample, or a processing device that pre-processes the sample, and a management device that manages at least one of the analyzer and the processing device, wherein the management device includes: error detection means that detects errors in the analyzer or the processing device; storage means having stored therein an operator notification management table in which at least one operator is registered per kind of error; error notification means that notifies an error that the error detection means has detected to operators who are to individually handle the error, the means notifying on the basis of the operator notification management table and in accordance with the kind of error detected by the error detection means; and registration means that registers an operator, who has handled the error as a troubleshooter, among operators to whom the error was notified from the error notification means. | 09-04-2014 |
20140246585 | MEASURING METHOD, DATA PROCESSING APPARATUS AND ELECTRON MICROSCOPE USING SAME - The objective of the invention is to provide a measuring method that can determine pattern contours and dimensions with high precision even if an object to be measured shrinks due to electron beam radiations. In order to achieve this objective, a method, which performs measurements by irradiating an electron beam onto a sample having a pattern formed on a primary coating thereof, prepares an SEM image and contour of the pattern (S | 09-04-2014 |
20140246583 | INSPECTION OR OBSERVATION APPARATUS AND SAMPLE INSPECTION OR OBSERVATION METHOD - Provided is an inspection apparatus or observation apparatus enabling appropriate inspection or observation of a sample in an easy-to-use manner, using a charged-particle technique and an optical technique. Specifically, provided is an inspection or observation apparatus including: a first casing forming at least part of a first space constituting at least part of a region through which a primary charged-particle beam emitted from a charged-particle irradiation section reaches a sample, the first space capable of being maintained in a vacuum state; a second casing provided on the first casing to form at least part of a second space capable of storing the sample therein; a partition wall section for partitioning the first space and the second space from each other, the partition wall section disposed so as to be coaxial with the charged-particle irradiation section when the sample is irradiated with the primary charged-particle beam from the charged-particle irradiation section; and an optical observation section for casting light onto the sample and detecting light from the sample from the same direction as the charged-particle irradiation section. | 09-04-2014 |
20140241945 | AUTOMATIC ANALYSIS DEVICE - An automatic analysis device has a light scattering photometer incorporated therein, and improved accuracy resulting from reducing the influences from external light. The automatic analysis device includes a scattered light measurement unit disposed inside the main-body casing, and openable/closable protective covers to cover the top face of the main-body casing. A first protective cover at the center includes a light-shielding part to block external light. The protective covers include see-through parts enabling viewing of the inside. The light-shielding part is configured to cover an area of the reaction disk at least corresponding to the area above the scattered light measurement unit, thus reducing external light leaking into the scattered light measurement unit, and thus removing influences from external light on the scattered light measurement. The protective cover may have a divided structure. | 08-28-2014 |
20140220785 | Plasma Etching Method - A plasma etching method that can improve an etching selection ratio of a film to be etched to a film different from the film to be etched compared with the related art is provided. The present invention provides a plasma etching method for selectively etching a film to be etched against a film different from the film to be etched, in which plasma etching of the film to be etched is performed using a gas that can cause to generate a deposited film containing similar components as components of the different film. | 08-07-2014 |
20140220705 | AUTOMATED ANALYZER AND ANALYZING METHOD - An analyzer provides conditions suitable for a reagent for performing latex immunoassay with a high sensitivity using a method of measuring scattered light. Irradiation light having a wavelength in the range of 0.65 to 0.75 μm is used, and scattered light generated from a reaction solution is received at a light-receiving angle of 15° to 35° with respect to the irradiation direction during the rotational movement of the reaction container. The reagent contains latex particles the average peak particle diameter of which ranges from 0.3 μm to 0.43 μm and to which antibodies are sensitized. The reaction solution contains latex particles at a concentration at which the absorbance to irradiation light having a wavelength of 0.7 μm is 0.25 abs to 1.10 abs, and a change in the amount of scattered light caused by the aggregation of the latex particles through antigens in a sample is measured and quantified. | 08-07-2014 |
20140220693 | AUTOMATIC ANALYZER | 08-07-2014 |
20140220489 | METHOD FOR PROCESSING SAMPLE AND SAMPLE PROCESSING APPARATUS - Long-period roughness in patterned resist is reduced in a manufacturing process of a sample such as a semiconductor device. A method for processing a sample to be processed, with patterned resist, in a sample processing apparatus includes: disposing the sample to be processed, with the patterned resist on the stage in the processing chamber; supplying silicon tetrachloride (SiCl | 08-07-2014 |
20140219546 | Method and Apparatus for Reviewing Defect - A method for reviewing defect, comprising the steps of: as an image acquisition step, imaging a surface of a sample using arbitrary image acquisition condition selected from a plurality of image acquisition conditions and obtaining a defect image; as a defect position calculation step, proceeding the defect image obtained by the image acquisition step and calculating a defect position on the surface of the sample; as a defect detection accuracy calculation step, obtaining a defect detection accuracy of the defect position calculated by the defect position calculation step; and as a conclusion determination step, determinating whether the defect detection accuracy obtained by the defect detection accuracy calculation step meets a predetermined requirement or not; wherein until it is determined that the defect detection accuracy obtained by the defect detection accuracy calculation step meets a predetermined in the conclusion determination step, the image acquisition condition is selected from the plurality of image acquisition conditions once again and the image acquisition step, the defect position calculation step, the defect detection accuracy calculation step and the conclusion determination step are repeated. | 08-07-2014 |
20140219545 | SEMICONDUCTOR INSPECTION SYSTEM - When the lengths of FEM wafers are automatically measured, not only the sizes of targets, the lengths of which are to be measured, are often varied from those in registration, but also the patterns of the targets are often deformed. Therefore, it is difficult to automatically determine whether the length measurement is possible or not. Therefore, the following are executed with a semiconductor inspection system: (1) a process of identifying the position of the contour line of an inspected image using a distance image calculated from a reference image, (2) a process of calculating a defect size image based on the position of the contour line with respect to the identified distance image, and detecting a defect candidate from the defect size image, and (3-1) a process of, upon detection of the defect candidate, calculating the size of the detected defect candidate, or (3-2) a process of detecting a portion different between the first and second contour lines as the defect candidate. | 08-07-2014 |
20140218723 | SURFACE INSPECTION APPARATUS AND METHOD THEREOF - A defect inspection apparatus including: a first illumination optical system which is configured to illuminate the inspection area on a sample surface from a normal line direction or a direction near thereof with respect to said sample surface; a second illumination optical system which is configured to illuminate said inspection area from a slant direction with respect to said sample surface; a detection optical system having a plurality of first detectors which are located, in front of, on the sides of, and behind said inspection area, respectively, with respect to the illumination direction of said second illumination optical system, and where the regular reflected light component, from said sample surface, by illumination light of said second illumination optical system, is not converged; and a signal processing system which is configured to inspect a defect, upon basis of signals obtained from said plurality of first detectors. | 08-07-2014 |
20140217304 | MULTIPOLE MEASUREMENT APPARATUS - In order to provide a multipole measurement apparatus that can easily obtain table data for an aberration corrector that corrects the aberrations in a charged particle beam apparatus, the multipole measurement apparatus, which is provided with an optical system ( | 08-07-2014 |
20140217274 | CHARGED PARTICLE BEAM DEVICE - This charged particle beam device is characterized by controlling a deflector in a manner so as to correct the amount of scanning deflection of a charged particle beam between: a first detection condition for detecting a secondary charged particle ( | 08-07-2014 |
20140217061 | Plasma Etching Method - The present invention provides, in a plasma etching method for plasma-etching a magnetic film, a plasma etching method that allows a desired etching depth to be obtained regardless of the opening size of a mask. The present invention is, in a plasma etching method for plasma-etching a magnetic film by using a tantalum film as a mask, characterized by including: a first process to plasma-etch the magnetic film to a desired depth by using a mixed gas of an ammonia gas and a helium gas; and a second process, after the first process, to plasma-etch the magnetic film etched to the prescribed depth by using a mixed gas of an ammonia gas and a gas containing the oxygen element or a mixed gas of an ammonia gas and a gas containing a hydroxyl group. | 08-07-2014 |
20140216657 | PLASMA PROCESSING APPARATUS AND SAMPLE STAGE THEREOF - There is disclosed a plasma processing apparatus for processing a wafer put on a sample stage disposed in a processing chamber within a vacuum vessel by the use of a plasma generated in the processing chamber after mounting the wafer on the sample stage. The apparatus has heaters in areas of the interior of the sample stage which are divided radially and circumferentially. At least those of the heaters which are arranged in the areas located in the radially outer position include circumferentially arranged heater portions that are connected in series. The amounts of heat generated by these circumferentially arranged heater portions are adjusted. | 08-07-2014 |
20140212344 | PLUG APPLICATION AND REMOVAL DEVICE AND SAMPLE PROCESSING DEVICE - The present invention is such a plug application and removal device that mist which is generated upon plug removal of a sample container or a reagent container is not peripherally scattered, or is such a sample processing device that mist which is generated upon dispensing of a sample or a reagent into a container is not mixed to another container. A plug application and removal device has a container holding mechanism that holds a container housing liquid inside and applied with a plug, and has a plug application and removal mechanism that removes or applies the plug from/to the container. The plug application and removal device has: a control mechanism for controlling movement of liquid or mist spilled out of the container upon a process of removal or application of the plug by the plug application and removal mechanism. | 07-31-2014 |
20140210983 | OPTICAL MICROSCOPE DEVICE AND TESTING APPARATUS COMPRISING SAME - The present invention allows observation or capturing of a high-contrast image of a sample for which sufficient contrast cannot be obtained in bright-field observation, such as a wafer having a pattern with a small pattern height. According to the present invention, a sample is illuminated through an objective lens used for capturing an image, and an imaging optics are provided with an aperture filter so that an image is captured while light of bright-field observation components is significantly attenuated. | 07-31-2014 |
20140208872 | SAMPLE INSPECTION AUTOMATION SYSTEM - There is provided a sample inspection automation system which uses a single holder as its carrier, which can supply empty holders to a distant processing unit on an extended circling path without delay, and which permits continuous operation in case of a failure through detachment of a failed part for example. The system combining a plurality of processing units has an empty holder circling path with a mechanism to circle empty holders across all processing units within the system in unicursal fashion; stoppers for retaining empty holders on the circling path; and a mechanism for controlling the stoppers on the circling path given an empty holder request from a processing unit. The empty holder circling path is made of a plurality of loops each equipped with the stopper. The sample inspection automation system thus configured supplies empty holders efficiently and simplifies system operation through fallback operation. | 07-31-2014 |
20140204194 | DEFECT OBSERVATION METHOD AND DEVICE THEREFOR - This invention relates to a method for performing an analysis of defective material and the refractive index, and a three-dimensional analysis of very small pattern shapes including the steps of imaging by a scanning electron microscope to acquire an image of the position of a defect under observation using information of inspection results obtained by an optical inspection device, creating a model of the defect by using the acquired image of the defect under observation, calculating the values detected by the detector when reflected and scattered light emitted from a defect model is received by the detector when light is irradiated onto the defect model thus created, comparing the detection values thus calculated and the values detected by the detector, which has received light actually reflected and scattered from the sample, to obtain information relating to the height of the defect under observation, the material, or the refractive index. | 07-24-2014 |
20140202995 | PLASMA HEAT TREATMENT APPARATUS - A plasma heat treatment apparatus, provided for enabling a control of temperature distribution within electrode surfaces, without accompanying an increase of an electric power to be inputted therein, even in case when heating is made on a sample to be heated, having a large diameter thereof, with applying plasma, comprises a treatment chamber | 07-24-2014 |
20140202828 | AUTOMATED ANALYZER AND MAINTENANCE METHOD FOR SAME - An automated analyzer includes a conveyance mechanism to convey a specimen, an analysis portion to analyze the specimen, and a device cover to cover a movable mechanism including the conveyance mechanism. The automated analyzer is provided with an interlock mechanism and an interlock release mechanism. The interlock mechanism stops an operation of the movable mechanism when the device cover is opened. The interlock release mechanism disables all or part of the interlock mechanism. The interlock mechanism is enabled when a lever | 07-24-2014 |
20140200162 | METHOD AND APPARATUS FOR NUCLEIC ACID ANALYSIS - A convenient method for nucleic acid analysis is provided, which enables 1000 or more types of nucleic acid to be analyzed collectively with high comprehensiveness and with a dynamic range of at least four digits. In particular, provided is a very effective analytical method especially for untranslated RNAs and microRNAs, of which the types of target nucleic acids is 10000 or lower. Nucleic acids can be analyzed conveniently and rapidly with high comprehensiveness and quantitative performance at single-molecule sensitivity and resolution by following the steps of: preparing a group of target nucleic acid fragments one molecule at a time and hybridizing the nucleic acid molecules, which have known base sequences and have been labeled with the fluorescence substances, with the group of the target nucleic acid fragments to detect the fluorescence substances labeling the hybridized nucleic acid molecules. | 07-17-2014 |
20140199779 | AUTOMATIC ANALYZER - An automatic analyzer is capable of controlling the gap between the tip of the sample nozzle and the bottom surface of the reaction container and restricting the sample attached to the tip of the sample nozzle. A movement distance of an arm is calculated and stored while the tip of the sample nozzle contacts a coordinate measurement stand until a stop position detector detects a stop position detection plate. The sample nozzle is moved toward the bottom surface of the reaction container and is stopped at the time when the stop position detector detects the stop position detection plate. The arm is moved upwardly for the movement distance stored in memory from this position. The sample nozzle can be stopped such that the tip of the sample nozzle is contacted to the bottom surface of the reaction container and the bend (warp) of the sample nozzle is restricted. | 07-17-2014 |
20140198975 | REGION-OF-INTEREST DETERMINATION APPARATUS, OBSERVATION TOOL OR INSPECTION TOOL, REGION-OF-INTEREST DETERMINATION METHOD, AND OBSERVATION METHOD OR INSPECTION METHOD USING REGION-OF-INTEREST DETERMINATION METHOD - The present invention aims at efficiently determining the partial regions to be inspected with high sensitivity and measured with high accuracy. | 07-17-2014 |
20140198974 | SEMICONDUCTOR DEVICE DEFECT INSPECTION METHOD AND SYSTEM THEREOF - Provided are a semiconductor device defect inspection method and system thereof, with which predetermined hot spots are inspected using a SEM, and with which the frequency of defects occurring at the hot spot is estimated statistically and with reliability. An inspection point is designated in design data by the defect type. A plurality of pre-designated inspection points is selected by the defect type from the designated inspection points. The plurality of pre-designated inspection points by defect type thus selected are image captured by the inspection points. A defect ratio, which is a ratio of the plural inspection points which are image captured by the defect type to the plural defects detected, and a reliability interval of the defect ratio which is computed by the defect type is compared with a preset reference value. A defect type having a defect occurrence ratio which exceeds the reference value is derived. | 07-17-2014 |
20140198321 | SURFACE SHAPE MEASURING APPARATUS - In related art, consideration is not given to that a spatial distribution of scattered light changes in various direction such as forward/backward/sideways according to a difference in micro roughness. Particularly, although a step-terrace structure appearing on an epitaxial growth wafer produces anisotropy in the scattered light distribution, consideration is not given to this point in the related art. The invention includes a process in which light is illuminated to a sample surface, plural detection optical systems mutually different in directions of optical axes detect a spatial distribution of scattered light, and a spatial frequency spectrum of the sample surface is calculated. | 07-17-2014 |
20140197336 | ELECTRON GUN AND CHARGED PARTICLE BEAM DEVICE - The objective of the present application is to suppress the occurrence of flares and to reduce the amount of secondary electrons arising at an aperture provided to the lead-out electrode of an electron gun. By coating a thin film having a low rate of secondary electron emission such as carbon onto the aperture of a lead-out electrode closest to an electron source in an electron gun, it is possible to reduce the amount of secondary electrons arising. Secondary electrons arising at the lead-out electrode, are reduced, and so as a result, flare is reduced. By incorporating two apertures to the lead-out electrode, and applying to the two apertures a potential that is equipotential to the lead-out electrode, it is possible to eliminate an electric field from seeping from under to over the lead-out electrode. Secondary electrons arising when an electron beam impacts the lead-out electrode cease to incur force in the direction of passage from the lead-out electrode, and consequently there is a reduction in flares. | 07-17-2014 |
20140197331 | CHARGED PARTICLE DEVICE - A charged particle device includes a cylindrical column ( | 07-17-2014 |
20140197329 | ION BEAM DEVICE - To avoid a glow discharge during the use of a conventional gas ionization chamber, there is no alternative but to increase a gas pressure. Therefore, while a conventional gas ionization chamber is used, an ion current cannot be increased by raising a gas introduction pressure. An object of the present invention is to increase the ion current by raising the gas pressure and prevent an ion beam from being scattered by an ionization gas. The gas is supplied from a structure maintained at a ground potential to prevent the application of a high voltage to the vicinity of an ionization gas introduction port at which the gas pressure is relatively high. Further, the ionization gas existing in a region through which the ion beam passes is preferentially reduced by performing differential evacuation from a lens opening in a lens electrode that forms an acceleration/focusing lens. | 07-17-2014 |
20140197313 | CHARGED-PARTICLE MICROSCOPE - A charged-particle-beam device is characterized in having a control value for an aligner coil ( | 07-17-2014 |
20140193918 | AUTOMATIC ANALYZER - An automatic analyzer adapted to enhance sample/reagent dispensing accuracy, regardless of a difference in sample/reagent dispensing height of a dispensing probe. When the amount of sample in a sample container is small, tip height “h1” of a sample dispensing probe positioned immediately after it has aspirated the sample decreases below tip height “h′” of the sample dispensing probe positioned immediately before it discharges the sample. The sample in this state takes a concave shape at the tip of the sample dispensing probe positioned immediately before it discharges the sample. When the amount of sample in a sample container is large, tip height “h2” of the sample dispensing probe positioned immediately after it has aspirated the sample increases above the tip height “h′” and the sample takes a convex shape at the tip of the sample dispensing probe positioned immediately before it discharges the sample. | 07-10-2014 |
20140193893 | GENETIC TEST SYSTEM - There is provided a genetic test system provided with a dispensing means for dispensing a sample and a reagent to a reaction vessel and a vessel conveyance means for conveying the reaction vessel. The system further includes a plurality of nucleic acid amplification detection units, each including a temperature control means for accommodating a plurality of reaction vessels and performing temperature control for each accommodated position of the reaction vessel, a temperature monitoring means for monitoring a value of temperature to be controlled of the reaction vessel, and a light emission measurement means for measuring light emission of reaction liquid in the reaction vessel. At least one of the nucleic acid amplification detection units individually has a vessel conveyance means different from the above-mentioned vessel conveyance means. | 07-10-2014 |
20140192353 | INSPECTION APPARATUS - An inspection method and apparatus for detecting defects or haze of a sample, includes illuminating light to the sample from an oblique direction relative to a surface of the sample with an illuminator, detecting first scattered light at a forward position relative to an illuminating direction from the sample with a first detector, detecting second scattered light at a sideward or backward position relative to the illuminating direction from the sample with a second detection, and processing a first signal of the first scattered light and a second signal of the second scattered light with different weighting for the first signal and for the second signal with a processor. | 07-10-2014 |
20140192352 | OPTICAL TYPE INSPECTION APPARATUS, INSPECTION SYSTEM AND THE WAFER FOR COORDINATES MANAGEMENT - This optical inspection device has: a line sensor on which channels are arranged; a moving means for moving a wafer mounted on a stage relative to the line sensor; a stage position detection means for detecting the on-stage positions of pseudo-defects in images formed on the channels as pseudo-defect stage coordinates, said coordinate management wafer being a wafer on which one pseudo-defect die is formed per row and column of a matrix of dies and each pseudo-defect die has a plurality of pseudo-defects formed in a line in the columnar direction; a coordinate transformation means for transforming the pseudo-defect stage coordinates into pseudo-defect die coordinates; a difference computation means for computing the differences of the pseudo-defect die coordinates from design coordinates; and a characteristic pattern acquisition means for obtaining a coordinate error characteristic pattern in which the differences from the pseudo-defect stage coordinates increase or decrease along a straight line. | 07-10-2014 |
20140191128 | EMITTER, GAS FIELD ION SOURCE, AND ION BEAM DEVICE - Provided is an ion source emitter that does not cause significant extraction voltage changes even when an apex portion of the emitter is repeatedly regenerated. The emitter has a shape of a triangular pyramid with the single atom at the apex. An apex portion of the emitter is substantially shaped like a hexagon when viewed from the apex side. | 07-10-2014 |
20140190253 | AUTOMATIC ANALYZER AND METHOD FOR DETERMINING MALFUNCTION THEREOF - An automatic analyzer which performs a suction operation a plurality of times on a same sample has a sample dispensing unit | 07-10-2014 |
20140185918 | CHARGED PARTICLE BEAM APPARATUS THAT PERFORMS IMAGE CLASSIFICATION ASSISTANCE - An increase in the number of evaluation points of a semiconductor wafer is effective in improving evaluation accuracy of a manufacturing process. However, a method of automatically evaluating and classifying of these evaluation points by a defect review apparatus is lower in accuracy as compared with a manual work, and it is difficult to perfectly automate the method by these apparatuses. Therefore, the judgment as to whether the evaluation point is actually a defect is entrusted to manual evaluation, limiting the number of evaluable points. The present invention aims at lightening a burden of the manual work in process margin evaluation in a semiconductor manufacturing process. | 07-03-2014 |
20140185041 | LIGHT SOURCE DEVICE, SURFACE INSPECTING APPARATUS USING THE DEVICE, AND METHOD FOR CALIBRATING SURFACE INSPECTING APPARATUS USING THE DEVICE - A surface inspecting apparatus can inspect a smaller defect by using a PSL of a smaller particle size. However, the particle size of the PSL is restricted. In the conventional surface inspecting apparatus, therefore, no consideration has been taken as to how to inspect the defect of such a small particle size as is not set in the PSL which will be needed in the near future in an inspection of a semiconductor manufacturing step. The invention has a light source device for generating light which simulated at least one of a wavelength, a light intensity, a time-dependent change of the light intensity, and a polarization of light which was scattered, diffracted, or reflected by an inspection object, and the light is inputted to a photodetector of the surface inspecting apparatus. The smaller defect can be inspected. | 07-03-2014 |
20140177940 | RECIPE GENERATION APPARATUS, INSPECTION SUPPORT APPARATUS, INSPECTION SYSTEM, AND RECORDING MEDIA - A desired area is extracted by directly analyzing information recorded in a design layout, an inspection recipe is generated by using this extraction method, and an efficient inspection is realized. The invention makes it easy to extract an area of a desired circuit module such as a memory mat by analyzing hierarchy information of design layout data, calculating reference frequency of each one cell in the design layout data that is its internal data, sorting the cells in order of increasing reference frequency, searching the object, and tracing its upper cell. | 06-26-2014 |
20140176943 | SURFACE DEFECT INSPECTION METHOD AND APPARATUS - A surface defect inspection apparatus and method is provided which illuminates a plurality of beams set to different intensity values to a sample. Scattered light from the plurality of beams is detected and processed to analyze the surface defects. | 06-26-2014 |
20140175534 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - In a process of dividing gates of multi-layered films in fabricating a NAND flash memory having a three-dimensional structure, a pattern is prevented from deforming and falling. A ratio of a length L to a height h of control gate groups configuring a memory cell of the flash memory is set to be less than 1.65 which is a range in which buckling does not occur. It is desirable that a ratio of a length L to a width W of the control gate groups is set to be less than 16.5. | 06-26-2014 |
20140175279 | CHARGED PARTICLE BEAM APPARATUS - A charged particle beam apparatus that easily discriminates the angles and energy of the SE or the BSE, and images information necessary for a sample to be observed. | 06-26-2014 |
20140175278 | CHARGED PARTICLE BEAM APPARATUS - Provided is a charged particle beam apparatus or charged particle microscope capable of observing an observation target sample in an air atmosphere or a gas environment without making significant changes to the configuration of a conventional high vacuum charged particle microscope. In a charged particle beam apparatus configured such that a thin film ( | 06-26-2014 |
20140174028 | CAP OPENING AND CLOSING MECHANISM AND AUTOMATIC ANALYZER INCLUDING THE SAME - An automatic analyzer of the present invention includes: a cap opening and closing mechanism including a plurality of types of support bodies, each being adaptable to a specific type of cap; an information control mechanism for sample containers; a cap opening and closing mechanism that performs uncapping and capping operations based on a sample container identifying process; and an uncapping/capping monitoring mechanism that determines an uncapping or capping operation. The cap opening and closing mechanism is thus configured so as to be capable of performing the uncapping and capping processes for different types of caps. This provides a cap opening and closing mechanism that enables the single cap opening and closing mechanism to perform the uncapping process and the capping process for different types of caps on a transfer path of sample containers in the automatic analyzer. | 06-26-2014 |
20140170734 | NUCLEIC ACID TEST APPARATUS - The nucleic acid amplification device is configured to amplify the nucleic acid in the reaction solution obtained by mixing a specimen and a reagent and includes a plurality of temperature regulation block configured to hold at least a reaction container provided on a holder base. The order and timings in which the reaction containers are continuously installed on the temperature regulation blocks and in which the temperature regulations of the temperature regulation blocks are started are controlled to minimize the temperature gradient in the holder base. | 06-19-2014 |
20140170027 | AUTOMATIC ANALYZER - A control unit outputs measurement status information including the time up to the completion of creation of the calibration curve for each of the desired measurement items to a display unit. The output/display of the calibration curve data measurement status for each of the items enables the operator to be aware of information about a failure to set a standard solution or to request the setting of the standard solution and to recognize how long he or she will need to wait until the creation of the calibration curve begins. The operator can therefore know what can be done while waiting, thereby improving job efficiency. | 06-19-2014 |
20140170023 | AUTOMATIC ANALYZER - In determining whether a rack inputted to the automatic analyzer by the user is to be transferred to an analysis section or not, samples existing in a route from a buffer to a sample dispensing position in the analysis section are identified, and the number of items in which suction by a nozzle has not been completed in analysis items requested for the samples is managed. When the number of items is reduced to be smaller than a given number, the conveyance of a next rack from the buffer to the analysis section is controlled, thereby limiting the number of analysis items requested for samples in a waiting state for analysis in the analysis section constantly to be smaller than a fixed number. As a result, a period of time until a measurement result of emergency samples is outputted can be reduced even when emergency samples are newly inputted. | 06-19-2014 |
20140170022 | SAMPLE DISPENSING APPARATUS AND AUTOMATIC ANALYZER INCLUDING THE SAME - The invention provides a small-sized automatic analyzer being compact, enabling a large number of analysis items to be carried out, and having a high processing speed. The automatic analyzer is particularly suitably applied to a medical analyzer used for qualitative/quantitative analysis of living body samples, such as urine and blood. A plurality of sample dispensing mechanism s capable of being operated independently of each other are provided to suck a sample from any one of a plurality of sample suction positions and to discharge the sucked sample to any one of a plurality of positions on a reaction disk. The automatic analyzer having a high processing capability can be thus realized without increasing the system size. | 06-19-2014 |
20140169657 | Defect Inspection Method and Defect Inspection Device - A defect inspection method for inspecting a defect on a semiconductor wafer, using plural inspection methods includes: merging hot-spot coordinates as coordinates on the semiconductor wafer, designated by a user, or coordinates where a systematic defect can occur, with detected defect coordinates on the semiconductor wafer, acquired from inspection information, after information indicating the type of coordinates are added thereto; deciding an inspection sequence of the coordinates merged with each other; and defect inspection for executing selection using the information indicating the respective types of the coordinates merged with each other, and executing an inspection by selecting an inspection method for every coordinates to be inspected. | 06-19-2014 |
20140160470 | INSPECTION APPARATUS - Light that is scattered by a defect on a wafer is very weak, and a PMT and an MPPC are used as detection methods for measuring the weak light with high speed and sensitivity. The methods have a function of photoelectronically converting the weak light and multiplying an electron, but have a problem in that a signal light is lost and an S/N ratio is reduced because the quantum efficiency of the photoelectron conversion is as low as 50% or less. Direct light is amplified prior to the photoelectron conversion. The optical amplification is an amplification method in which the signal light and light of pump light are introduced into a rare-earth doped fiber, a stimulated emission is caused, and the signal light is amplified. In the present invention, the optical amplification is used. The amplification factor is changed according to various conditions. | 06-12-2014 |
20140158540 | NANOPORE-BASED ANALYSIS DEVICE - The biological polymer analyzing equipment with nanopore includes a chamber part having a chamber having a sample introduction section and a sample outflow section separated by a substrate; a first electrode provided in the sample introduction section and a second electrode provided in the sample outflow section; a thin membrane formed on the substrate; a nanopore provided in the thin membrane of the substrate and communicating between the sample introduction section and the sample outflow section; a third electrode provided near the nanopore of the substrate; and a voltage applying member to electrodes, wherein the voltage applying member includes a member for applying voltages between the first electrode and the third electrode, between the first electrode and the second electrode, respectively, and between the third electrode and the second electrode, and relates to a method for analyzing a biological polymer using the biological polymer analyzing equipment with nanopore. | 06-12-2014 |
20140151555 | ELECTRON MICROSCOPE - Provided is an electron microscope on which a specimen holder with high voltage applied is mountable. The specimen holder has safety (electric shock prevention means), and attention is paid to the specimen holder in terms of operability. | 06-05-2014 |
20140151553 | CHARGED PARTICLE BEAM DEVICE, METHOD FOR ADJUSTING CHARGED PARTICLE BEAM DEVICE, AND METHOD FOR INSPECTING OR OBSERVING SAMPLE - A charged particle beam device capable of observing a sample in an air atmosphere or gas atmosphere has a thin film for separating the atmospheric pressure space from the decompressed space. A vacuum evacuation pump evacuates a first housing; and a detector detects a charged particle beam (obtained by irradiation of the sample) in the first housing. A thin film is provided to separate the inside of the first housing and the inside of a second housing at least along part of the interface between the first and second housings. An opening part is formed in the thin film so that its opening area on a charged particle irradiation unit's side is larger than its opening area on the sample side; and the thin film which covers the sample side of the opening part transmits or allows through the primary charged particle beam and the charged particle beam. | 06-05-2014 |
20140151327 | PLASMA ETCHING METHOD - The present invention provides a plasma etching method with an EUV-exposed resist capable of preventing variations of device feature dimensions. The plasma etching method of the present invention is to plasma-etch a target material with a multilayer resist that serves as a mask and composed of an EUV-exposed resist, an antireflective coating, an inorganic film and an organic film. The plasma etching method includes a first step of depositing a deposition film on a surface of the EUV-exposed resist before the antireflective coating is etched, a second step of etching the deposition film deposited on the antireflective coating and the antireflective coating with a gas mixture of Cl | 06-05-2014 |
20140148016 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a processing chamber which plasma-processes a sample, a first high-frequency power supply which supplies first high-frequency power for plasma generation to the processing chamber, a second high-frequency power supply which supplies second high-frequency power to a sample stage on which the sample is placed and a pulse generation device which generate first pulses for time-modulating the first high-frequency power and second pulses for time-modulating the second high-frequency power. The pulse generation device includes a control device which controls the first and second pulses so that frequency of the first pulses is higher than frequency of the second pulses and the on-period of the second pulse is contained in the on-period of the first pulse. | 05-29-2014 |
20140147348 | CHEMICAL ANALYSIS APPARATUS AND CHEMICAL ANALYSIS METHOD - Chemical analysis apparatus for inserting a sample serving as an analyzable substance and a reagent into a reaction container and agitating by irradiating sound waves to the reaction container, the chemical analysis apparatus including: a piezoelectric element generating sound waves; and a driver for driving the piezoelectric element, and including: a wave form producing device for producing an oscillation waveform having a fundamental frequency of the sound waves to be irradiated; an auxiliary waveform producing device for producing an oscillation wave form having a frequency lower than that of the oscillation waveform; a multiplying circuit creating a multiplied waveform between the waveform and the wave form; and, a power amplifier for power-amplifying the multiplied waveform, wherein it is intermittently irradiated with the sound wave in the reaction container, and further, the wave form producing device has a function capable of frequency-modulation with a prescribed frequency width. | 05-29-2014 |
20140147335 | AUTOMATIC ANALYZER - An automatic analyzer enables users to perform working steps easily and reliably by switching a display screen irrespective of a skill level of the user. The automatic analyzer, which determines a consistency of a test item, includes a display/input section to display a plurality of working steps relating to necessary work flow for measurement. The display/input section is adapted to selectively present a maximized workflow display and a reduced workflow display. The maximized workflow display shows a series of operations and works, and further shows a plurality of operations and works in an order that the plurality of operations and works are processed. In a reduced display of the work flow, the reduced workflow display shows details of a specific operation or work, and a position of the specific operation or work in a sequence that the entire series of operations and works are processed. | 05-29-2014 |
20140145078 | SCANNING ELECTRON MICROSCOPE AND A METHOD FOR IMAGING A SPECIMEN USING THE SAME - (1) part or all of the number, coordinates and size/shape and imaging sequence of imaging points each for observation, the imaging position change method and imaging conditions can be calculated automatically from CAD data, (2) a combination of input information and output information for imaging recipe creation can be set arbitrarily, and (3) decision is made of imaging or processing at an arbitrary imaging point as to whether to be successful/unsuccessful and in case a failure is determined, a relief process can be conducted in which the imaging point or imaging sequence is changed. | 05-29-2014 |
20140144873 | PLASMA ETCHING METHOD - A plasma etching method performs plasma etching on a sample, which has laminated films containing a variable layer of a magnetic film, a barrier layer of an insulating material, and a fixed layer of a magnetic film, using a hard mask, which includes at least one of a Ta film and a TiN film. The plasma etching method includes a first step of etching the laminated films using N | 05-29-2014 |
20140140890 | AUTOMATIC ANALYSIS DEVICE - The automatic analysis device measures time sequential data on a scattered light amount as reaction process data, and quantitatively determines the concentration of an analyte from a change in light amount. The automatic analysis device has a function of selecting reaction process data to be used for quantitative determination from the reaction process data obtained by measurement using a plurality of light receivers at different angles. As a result of using this function, data is selected from the reaction process data obtained by measurement using the plurality of light receivers at different angles in accordance with the concentration of the analyte and whether the priority is given to high sensitivity in the case where sensitivity is prioritized or a dynamic range, and the result of the quantitative determination is displayed. | 05-22-2014 |
20140138542 | SCANNING ELECTRON MICROSCOPE AND SCANNING TRANSMISSION ELECTRON MICROSCOPE - A scanning transmission electron microscope according to the present invention includes an electron lens system having a small spherical aberration coefficient for enabling three-dimensional observation of a 0.1 nm atomic size structure. The scanning transmission electron microscope according to the present invention also includes an aperture capable of changing an illumination angle; an illumination electron lens system capable of changing the probe size of an electron beam probe and the illumination angle; a secondary electron detector ( | 05-22-2014 |
20140137671 | SOLID-PHASE EXTRACTION APPARATUS AND VISCOSITY MEASUREMENT APPARATUS - A solid-phase extraction apparatus capable of carrying out highly accurate solid-phase extraction by automatically controlling liquid-permeation speeds in an adsorbing step, a cleaning step, and an eluting step of the solid-phase extraction in order to improve the accuracy of the collection rate of a measurement component(s) also in measurement of each of sample solutions respectively having different viscosities and to ensure a certain processing ability. The solid-phase extraction apparatus includes a sample dispensing unit that dispenses a sample solution, a solid-phase extraction unit that carries out a solid-phase extraction process of applying a pressure to the sample solution dispensed by the sample dispensing unit and extracting the measurement component from the sample solution, and a converting unit that measures the viscosity of the sample solution and determines the pressure to be applied to a solid-phase extraction cartridge based on the information of the measured viscosity of the sample solution. | 05-22-2014 |
20140137059 | METHOD AND APPARATUS FOR PLASMA PROCESSING - Plasma processing focus ring design arrangements, including: acquiring a surface voltage and a sheath thickness above a surface of the object to be processed, and a surface voltage and a sheath thickness above a surface of the focus ring, by an equivalent circuit analysis; performing 2D plasma and 2D electric field analysis, based on the equivalent circuit analysis; and designing configuration of the focus ring and the processing stage, to achieve a plasma-sheath interface flattening condition by making a sum of a height from a height reference point to a surface of the object and a sheath thickness from the surface of the object to a plasma-sheath interface above the object, equal to a sum of a height from the height reference point to a surface of the focus ring and a sheath thickness from the surface of the focus ring to a plasma-sheath interface above the focus ring. | 05-15-2014 |
20140136123 | AUTOMATIC ANALYSIS DEVICE AND AUTOMATIC ANALYSIS PROGRAM - Accuracy control of an automatic analysis device that mixes a sample and a reagent to measure temporal change of a mixed solution is realized. A plurality of measurement point data is acquired from a reaction process of the sample and the reagent. Parameters and test values of approximate equations for approximating the plurality of measurement point data are accumulated in a storage unit. A distribution map of reference data corresponding to the parameters or the test values is created based on predetermined numbers of the parameters or the test values accumulated in the storage unit. Next, a plurality of screens for individually superimposing, on the distribution map, curved lines corresponding to a plurality of regression function candidates obtained by applying a plurality of regression functions are arranged and presented on a display screen, so as to approximate the data to the distribution map of the reference data. | 05-15-2014 |
20140134767 | LED LIGHT SOURCE, ITS MANUFACTURING METHOD, AND LED-BASED PHOTOLITHOGRAPHY APPARATUS AND METHOD - Structurally-simple LED light source preventing temperature variations among multiple LED elements arranged densely on LED-mounting substrate is described. LED light source includes a plurality of LED elements each of which is formed by connecting an LED chip to electrodes formed on a ceramic substrate; LED-mounting substrate on which to mount the plurality of LED elements, the LED-mounting substrate having through holes therein; and heat sink plate for releasing heat from the LED-mounting substrate, wherein a thermally conductive resin is present between the LED-mounting substrate and the heat sink plate and wherein part of the thermally conductive resin protrudes from the through holes of the LED-mounting substrate and covers the top surface of the LED-mounting substrate on which the plurality of LED elements are mounted, so thermally conductive resin is in contact with the plurality of LED elements. | 05-15-2014 |
20140131570 | LIQUID CHROMATOGRAPHY MASS SPECTROMETER DEVICE - The purpose of the present invention is to provide a mass spectrometer with high detection sensitivity to generate fine charged droplets and thereby improve the efficiency of sample ionization, and to reduce large droplets with high ionic strength. The present invention includes: liquid chromatograph separating means that separates a sample solution into components; a sample sprayer that sprays as droplets the sample solution separated and eluted by the liquid chromatograph separating means; ion generating means that charges the droplets and generates ions; a mass spectrometer that receives the ions and performs mass spectrometry on the ions; and a desolvation unit that removes a solvent contained in the charged droplets, wherein the desolvation unit includes a desolvation flow path chamber through which the charged droplets pass, heating means for heating the desolvation flow path chamber, and a helical droplet flow path formed in the desolvation flow path chamber. | 05-15-2014 |
20140131314 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes: a processing chamber in which plasma processing is performed; a gas feeding unit which supplied process gas into the processing chamber; a radio-frequency power source which supplies radio-frequency power that turns the process gas fed into the processing chamber to plasma; and a light detector which detects the light emitted from the plasma generated in the process chamber. The light detector includes a detecting unit which detects, during respective preset exposure times, the light emitted from the plasma that is generated due to pulse-modulated radio-frequency power, and a control unit which performs control such that the amount of the light emitted from the plasma during each of the preset exposure times becomes constant. | 05-15-2014 |