Grain Free Products, Inc. Patent applications |
Patent application number | Title | Published |
20110226324 | System for the Production of Single Crystal Semiconductors and Solar Panels Using the Single Crystal Semiconductors - A process and the required technical arrangement has been developed to produce single crystal solar panels or otherwise used semiconductors, which starts with the raw material to produce single crystal copper ribbons, extruded directly from the melt, with unharmed and optical surfaces onto which in the next unit a silicon or germanium film will be deposited. In the next unit the copper ribbon will be removed from the silicon film, whilst a hard plastic support or ceramic support is mounted, leaving copper contours on the silicon film to be used as electrical conductors or contacts. In the next unit a thin film is deposited of II-VI-compounds that enhance the infrared sensitivity of the base film of silicon or germanium up to 56% of the incoming light. This technology guarantees the lowest possible cost in production of the highest possible efficiency of materials for infrared applications and also for electronic applications. | 09-22-2011 |
20110200841 | SYSTEM FOR THE PRODUCTION OF GRAIN FREE METAL PRODUCTS - A new process and technical arrangement has been established for the production of grain free metal products, which can be extruded directly from the melt, by inserting a seed crystal from a seeding chamber into the opening of the extrusion jet of the melting vessel. The seed crystal will break by contact the surface tension of the liquid metal in the extrusion jet channel, which is slightly undercooled. Upon establishing contact, the temperature at the meeting point of the seed crystal and the liquid metal will be raised by RF-heating to permit the extrusion of the seed crystal backwards, ensuring that metal and seed crystal maintain contact and crystal growth will continue. It has been discovered, that single crystals with the orientation of the seed crystal will continue to grow and to establish high hardness. Speed of extrusion is exceeded to reach only grain free structure in the grown metal. | 08-18-2011 |