| Fuji Electric Co., Ltd. Patent applications |
| Patent application number | Title | Published |
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| 20160142019 | AMPLIFYING DEVICE AND OFFSET VOLTAGE CORRECTION METHOD - An output voltage delay time caused by the relationship between offset voltage and input voltage is shortened. A single power supply amplifying device includes first and second amplifying units, a state detecting unit, and an offset voltage correcting unit. The first amplifying unit has differential pair transistors and amplifies the difference between input voltages. The second amplifying unit amplifies a first output voltage of the first amplifying unit. The state detecting unit detects a state where a negative offset voltage that causes a second output voltage of the second amplifying unit to be lower than the input voltage occurs, and a potential of the input voltage is lower than the absolute value of the negative offset voltage. The offset voltage correcting unit then corrects the negative offset voltage to a positive offset voltage that causes the second output voltage to be higher than the input voltage. | 05-19-2016 |
| 20160133704 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first conductive type first main electrode region, a first conductive type drift region which makes contact with the first main electrode region, a first conductive type second main electrode region which makes contact with the drift region, a second conductive type well region which is provided in a part of a surface layer portion of the drift region and to which a reference potential is applied, and a first conductive type potential extracting region which is provided in a surface layer portion of the well region and to which the reference potential is applied. The well region serves as a base region which controls a current flowing between the potential extracting region and the drift region. Thus, it is possible to provide a novel semiconductor device which is high in reliability while the increase of the chip size can be suppressed. | 05-12-2016 |
| 20160129792 | METHOD FOR MANUFACTURING COOLER FOR SEMICONDUCTOR-MODULE, COOLER FOR SEMICONDUCTOR-MODULE, SEMICONDUCTOR-MODULE AND ELECTRICALLY-DRIVEN VEHICLE - A cooler for a semiconductor-module includes: a heat sink which has an appearance of a cuboid structure to one side of which a flow rate control plate is fixed; a thermal radiation plate on an outer surface of which semiconductor devices are bonded; and a tray-shaped cooling jacket having: a coolant introduction channel; a coolant extraction channel extending in parallel to the coolant introduction channel; and a cooling channel provided between the coolant introduction and extraction channels. The heat sink is provided in the cooling channel of the cooling jacket so that the flow rate control plate extends in a boundary between the coolant extraction channel and the cooling channel, and channels provided for the heat sink extend orthogonally to the coolant introduction and extraction channels. The thermal radiation plate is fixed so as to close an opening the cooling jacket. | 05-12-2016 |
| 20160126718 | SEMICONDUCTOR DEVICE - In a semiconductor device, an IGBT and an SJMOSFET connected in parallel have respective gate terminals controlled independently of each other. When a high voltage occurs and a high current flows caused by short-circuit in an external circuit under a condition of ON state of the IGBT and SJMOSFET, an operational amplifier in the control IC detects the overcurrent through the IGBT and controls the gate signal to restrict the current through the IGBT. After that, the operational amplifier throttles the current through the IGBT according to a reference voltage of a capacitor decreasing by the discharge through a constant current source, thus conducting soft-OFF operation of the IGBT. | 05-05-2016 |
| 20160126319 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device having a MOS gate structure includes forming a device structure on a semiconductor substrate; forming an interlayer dielectric to cover the device structure; forming a contact hole through the interlayer dielectric; forming a transition metal film (e.g., Ni) on a portion of the semiconductor substrate exposed by the contact hole; (e) forming a metal film (e.g., Ti) on the entire surface of the semiconductor substrate; forming an oxide film in the surface of the metal film; selectively removing the metal film in which the oxide film has been formed, to thereby expose the transition metal film; and (h) exposing, to a hydrogen plasma atmosphere, the semiconductor substrate in which the transition metal film and the oxide film have been exposed, to thereby cause the transition metal film to generate heat and react with the semiconductor substrate and form an ohmic contact there between. | 05-05-2016 |
| 20160126314 | SEMICONDUCTOR DEVICE - A gate pad electrode and a source electrode are disposed, separately from one another, on the front surface of a super junction semiconductor substrate. A MOS gate structure formed of n source regions, p channel regions, p contact regions, a gate oxide film, and polysilicon gate electrodes is formed immediately below the source electrode. The p well regions are formed immediately below the gate pad electrode. The p channel regions are linked to the p well regions via extension portions. By making the width of the p well regions wider than the width of the p channel regions, it is possible to reduce a voltage drop caused by a reverse recovery current generated in a reverse recovery process of a body diode. Breakdown of a portion of a gate insulating film immediately below the center of the gate pad electrode and breakdown of the semiconductor device are thus prevented | 05-05-2016 |
| 20160126235 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - A capacitive component region is formed below a temperature detecting diode or below a protective diode. In addition, the capacitive component region is formed below an anode metal wiring line connecting the temperature detecting diode and an anode electrode pad and below a cathode metal wiring line connecting the temperature detecting diode and a cathode electrode pad. The capacitive component region is an insulating film interposed between polysilicon layers. Specifically, a first insulating film, a polysilicon conductive layer, and a second insulating film are sequentially formed on a first main surface of a semiconductor substrate, and the temperature detecting diode, the protective diode, the anode metal wiring line, or the cathode metal wiring line is formed on the upper surface of the second insulating film. Therefore, it is possible to improve the static electricity resistance of the temperature detecting diode or the protective diode. | 05-05-2016 |
| 20160126209 | SEMICONDUCTOR DEVICE - A semiconductor device includes: an insulating substrate including an insulating plate and a circuit board on the insulating plate; a semiconductor chip having an electrode on a front surface thereof, a back of the semiconductor chip being fixed to the circuit board; a printed circuit board that faces the circuit board and the front surface of the semiconductor chip; and one or more conductive posts each having one end connected via solder to the circuit board or to the electrode on the semiconductor chip, another end connected to the printed circuit board, and one or more grooves that extend from said one end of the conductive post that contacts the solder to said another end of the conductive post connected to the printed circuit board. | 05-05-2016 |
| 20160126187 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor element having a gate and source electrodes; an insulating substrate which is provided with an insulating plate, a first circuit plate and a second circuit plate, the first circuit plate provided in a main surface of the insulating plate to be electrically connected to the gate electrode, the second circuit plate provided in the main surface to surround the first circuit plate and to be electrically connected to the source electrode; a first terminal, being column-shaped and electrically and mechanically connected to the first circuit plate; and a second terminal which is provided with a cylindrical body portion and support portions, the body portion has a through hole into which the first terminal is inserted with a gap, the support portions disposed in end portions of the body portion and electrically and mechanically connected to the second circuit plate. | 05-05-2016 |
| 20160126092 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE - On a silicon carbide semiconductor substrate, heat treatment is performed after one layer or two or more layers of an oxide film, a nitride film, or an oxynitride film are formed as a gate insulating film. The heat treatment after the gate insulating film is formed is performed for a given period in an atmosphere that includes H | 05-05-2016 |
| 20160118974 | DRIVE CONTROL METHOD OF POWER SEMICONDUCTOR MODULE AND CONTROL CIRCUIT OF POWER SEMICONDUCTOR MODULE - An IGBT provided on the high voltage side uses the sensing function of the IGBT to detect a current and prevents the IGBT from breaking due to an overcurrent through a gate drive unit when the current detected by the short-circuit protection unit is determined to be an overcurrent. When detecting an overcurrent, the short-circuit protection unit outputs an alarm signal to a composition unit. Also, it detects the temperature of the power semiconductor module by using a temperature detection element, converts the detected temperature into a digital signal in the temperature information generating unit, and outputs the digitized temperature information to the composition unit. The composition unit composites the temperature information and the alarm signal and one resultant composite output is transmitted to a control unit on the low voltage side. | 04-28-2016 |
| 20160112227 | TRANSMITTING DEVICE, RECEIVING DEVICE, AND TRANSMITTING AND RECEIVING SYSTEM - A transmitting device includes: a compressing unit configured to generate and output a compressed digital signal that has been compressed, by converting an input digital signal by use of a Walsh function and extracting a specific frequency component. | 04-21-2016 |
| 20160111348 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes: an interlayer insulating film covering: a cathode region and an anode region to form a pn junction with each other; a cathode electrode provided on the interlayer insulating film and connected to the cathode region through a first contact hole; and an anode electrode provided on the interlayer insulating film and connected to the anode region through a second contact hole. Among current paths in the cathode and anode regions, the current path in one of the cathode and anode regions that has a larger sheet resistance is shorter than the other current path, the current path in the cathode region extending from an interface of the pn junction to an end of the first contact hole closest to the interface, the current path in the anode region extending from the interface to an end of the second contact hole closest to the interface. | 04-21-2016 |
| 20160104724 | SEMICONDUCTOR DEVICE - A semiconductor substrate of a first conductivity type having a first region of a second conductivity type formed in a surface thereof; an insulating film on the semiconductor substrate; a primary wiring line connected to the first region and configured to receive a voltage from outside; a plurality of diodes connected in series on the insulating film and having a spiral shape generally centering around the first region in a plan view, the diodes having one end of the series thereof connected to the primary wiring line and serving as a cathode; a resistor voltage divider having one end connected to another end of the series of diodes; a first connection wiring line connected to another end of the resistor voltage divider; and a second connection wiring line connected to a midpoint between the another end of the series of diodes and the another end of the resistor voltage divider. | 04-14-2016 |
| 20160095244 | POWER SEMICONDUCTOR MODULE DEVICE - Second fixation portions of a terminal conversion adaptor are fitted into and engaged with engagement portions abutting on first fixation portions of a power semiconductor module. By use of one common fixation screw, each of the fixation portions and each of the second fixation portions are fixed to a cooler. Pin connection type external connection terminals of the power semiconductor module are connected to conversion terminals (which are provided with screw connection portions) of the terminal conversion adaptor so that the pin connection type external connection terminals can be converted into screw connection. Thus, it is possible to provide a conversion adaptor which can convert a connection form of each external connection terminal of a power semiconductor module easily and a power semiconductor module device in which the connection form of the external connection terminal can be converted into a desired connection form by the conversion adaptor. | 03-31-2016 |
| 20160093564 | APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE - An apparatus for a manufacturing semiconductor device including a plate member and a joint member. The apparatus includes a plate-type tool having the plate member mounted thereon, a first fixing tool and a second fixing tool having an inclined surface for abutting an upper edge of an end part in a width direction of plate member. The second fixing tool is fixed onto the plate-type tool adjacent to the end part. An ultrasonic horn applies ultrasonic vibration in the width direction of plate member while pressing the joint member toward the plate member. | 03-31-2016 |
| 20160093494 | MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE - In producing a MOS silicon carbide semiconductor device, after a first heat treatment (oxynitride) is performed in an oxidation atmosphere including nitrous oxide or nitric oxide, a second heat treatment including hydrogen is performed, whereby in the front surface of a SiC epitaxial substrate, a gate insulating film is formed. A gate electrode is formed and after an interlayer insulating film is formed, a third heat treatment is performed to bake the interlayer insulating film. After contact metal formation, a fourth heat treatment is performed to form a reactive layer of contact metal and the silicon carbide semiconductor. The third and fourth heat treatments are performed in an inert gas atmosphere of nitrogen, helium, argon, etc., and a manufacturing method of a silicon carbide semiconductor device is provided achieving a normally OFF characteristic and lowered interface state density. | 03-31-2016 |
| 20160087061 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE - A titanium layer and a nickel layer are sequentially formed on a back surface of a SiC wafer. Next, by high-temperature heat treatment, the SiC wafer is heated and the titanium layer and the nickel layer are sintered forming a nickel silicide layer that includes titanium carbide. By this high-temperature heat treatment, an ohmic contact of the SiC wafer and the nickel silicide layer is formed. Thereafter, on the nickel silicide layer, a back surface electrode multilayered structure is formed by sequentially stacking a titanium layer, a nickel layer, and a gold layer. Here, in forming the nickel layer that configures a back surface electrode multilayered structure, the nickel layer is formed under a condition that satisfies 0.0| 03-24-2016 | |
| 20160086804 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - First, a first resist mask for forming an n | 03-24-2016 |
| 20160084786 | GAS DETECTING DEVICE AND METHOD THEREOF - A gas detecting method includes heating a gas detector, formed of a gas sensing layer and an adsorption layer, for an oxygen adsorption period t | 03-24-2016 |
| 20160079402 | TRENCH INSULATED GATE BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREOF - A trench insulated gate bipolar transistor includes trenches formed in the front surface of a first conductivity type drift layer, a plurality of gate electrodes selectively provided inside the trenches, insulating blocks formed of an insulator, with which the insides of the trenches are filled, one between adjacent gate electrodes, and a second conductivity type collector region formed on a surface of the first conductivity type drift layer on the opposite side from the trenches. | 03-17-2016 |
| 20160076960 | PRESSURE SENSOR DEVICE AND PRESSURE SENSOR DEVICE MANUFACTURING METHOD - Provided are a pressure sensor device and method for making the same. A base member and a pressure sensor chip are joined so that a pressure receiving portion is aligned with a through hole. A pressure introduction unit and the base member are positioned and joined so that through holes thereof are continuous. The pressure introduction unit has a stepped portion in an end portion on an opened end side, and has a protruding portion protruding from the stepped portion to the base member side in an end portion. | 03-17-2016 |
| 20160072503 | GATE DRIVE CIRCUIT - A gate drive circuit may include an output transistor that supplies a constant current to a gate of a switching element and drives the switching element on. A pre-driver may have a CMOS configuration including a p-channel MOS-FET and n-channel MOS-FET. The pre-driver may receive a gate control signal that drives the output transistor on/off. A reference current source may controls the gate voltage of a constant current transistor and provide a constant current from the constant current transistor A buffer amplifier may apply the gate voltage of the constant current transistor as the operating reference voltage of the pre-driver. | 03-10-2016 |
| 20160072499 | SEMICONDUCTOR DEVICE - A semiconductor device, according to one possible configuration, includes switching circuits, each switching circuit comprising IGBT chips connected in series and clamping diodes. The semiconductor device also includes a first and a second wiring line and auxiliary emitter lines. The first wiring line and a first auxiliary emitter line connect the emitter terminals of IGBT chips of the first and second switching circuits. The second wiring line and another auxiliary emitter line connect the emitter terminals of the third IGBT chips of the first and second switching circuits. The wiring lines have a large current carrying capacity and a lower resistance value than their respectively connected auxiliary emitter line. | 03-10-2016 |
| 20160072406 | CONTROL METHOD AND CONTROL SYSTEM OF THREE LEVEL INVERTER - A three-phase inverter includes three-level inverters connected in parallel to one another, each being capable of outputting a DC high voltage, DC middle voltage, and DC low voltage. A method for controlling the three-phase inverter produces on-time ratios in one switching period of switching elements in the three-level inverters, so as to make the three-phase inverter for one phase alternately output the DC high voltage and the DC middle voltage, to make the three-phase inverter for another phase output the DC middle voltage, and to make the three-phase inverter for the remaining phase alternately output the DC middle voltage and the DC low voltage. | 03-10-2016 |
| 20160072348 | PERMANENT MAGNET EMBEDDED-TYPE ROTATING ELECTRIC MACHINE AND MANUFACTURING METHOD THEREOF - Cracking and flying around of permanent magnets in a permanent magnet embedded-type rotating electric machine is prevented. Thermally hardening FRP is used as a reinforcement sheet, and the reinforcement sheet is wrapped around the periphery of a permanent magnet and caused to adhere to the surface of the permanent magnet by being thermally hardened. Subsequently, the permanent magnet to which the reinforcement sheet is adhering is embedded in magnet embedding holes of the rotor. The surface of the reinforcement sheet after thermal hardening is in a state of not being attached to the inner wall surface of the magnet embedding holes. Consequently, no stress caused by the difference between the linear expansion coefficients of the rotor and permanent magnets acts on the permanent magnets when the temperature of the rotor rises, and cracking of the permanent magnets can thus be prevented. | 03-10-2016 |
| 20160071998 | SEMICONDUCTOR DEVICE - A semiconductor device is provided, which has a wide-bandgap semiconductor element, such as a SiC element, and which includes a sensor capable of responding sufficiently to characteristic requirements for protecting and controlling the semiconductor element. The semiconductor device includes a wide-bandgap semiconductor element mounted on a substrate; and a light-receiving element that receives light emitted from the wide-bandgap semiconductor element when the wide-bandgap semiconductor element is in a conduction state. | 03-10-2016 |
| 20160065077 | DC POWER SUPPLY EQUIPMENT - A power supply equipment includes a plurality of units each including a capacitor and an isolated DC-DC converter connected between the both terminals of the capacitor, wherein DC input sides of the plurality of units are connected in series and the DC output sides are connected together in parallel. The DC power supply equipment also comprises control circuits to control the isolated DC-DC converters. The control circuits generate operation commands to operate some of the plurality of units in an alternating sequence with a same time ratio in a predetermined control period in a light load condition, and the control circuits control the isolated DC-DC converters of the units according to the operation command. | 03-03-2016 |
| 20160064476 | SEMICONDUCTOR DEVICE - A semiconductor device has a reduced an on-voltage and uses a gate resistance to improve the trade-off relationship between turn-on loss Eon and dV/dt, and turn-on dV/dt controllability. A floating p | 03-03-2016 |
| 20160063142 | CONTROL SYSTEM DESIGN ASSIST DEVICE, CONTROL SYSTEM DESIGN ASSIST PROGRAM, CONTROL SYSTEM DESIGN ASSIST METHOD, OPERATION CHANGE AMOUNT CALCULATION DEVICE AND CONTROL DEVICE - A control system design assist device which assists design of a control system that controls a control object such that the control object outputs a control amount according to a target value. The design assist device generates a response prediction formula predicting a variation value of the control amount at each control timing included in the sequence of control timings by using an amount of change of the operation amount at each operation timing included in the sequence of operation timings; generates evaluation formulas; and converts a logical product formula into a first first-order predicate logical formula. The design assist device generates a control logical formula indicating a relationship between the current value of the target deviation and the change amount of the operation amount. | 03-03-2016 |
| 20160061885 | SEMICONDUCTOR DEVICE - A semiconductor device including: an insulating substrate; a semiconductor element mounted on the insulating substrate; an internal printed circuit board disposed on the semiconductor element; and a sealing member that seals the semiconductor element, the internal printed circuit board, and at least a portion of the insulating substrate. The sealing member is made of a sealant that includes a resin and a pigment, and that initially has a chromatic, white, or gray color, and the sealing member degrades, thereby causing color of a front surface thereof to change to a degree recognizable by a user after the semiconductor device has been in use under a prescribed condition for a prescribed duration. | 03-03-2016 |
| 20160061778 | FLUID MEASURING DEVICE - A fluid measuring device in which an ultrasonic probe provided on an outer pipeline surface transmits and receives ultrasonic waves to and from fluid in a pipeline to measure characteristics of the fluid on the basis of propagation time of the ultrasonic waves, features a wedge included in the ultrasonic probe and having an ultrasonic vibrator provided on a wedge surface. The ultrasonic vibrator may be horizontal to a surface contacting the pipeline so that ultrasonic waves enter the fluid vertically. The ultrasonic vibrator may be provided on a wedge surface inclined with respect to an axial direction of the pipeline so that ultrasonic waves enter the fluid obliquely. The fluid measuring device embodiments are capable of measuring fluid characteristics, such as the type and velocity of various fluids, easily and accurately even when it is difficult to allow an ultrasonic signal to pass through the fluid in a pipeline. | 03-03-2016 |
| 20160061635 | MAGNETIC POLE POSITION DETECTION DEVICE OF PERMANENT MAGNET-TYPE SYNCHRONOUS MOTOR - A magnetic pole position detection device of a permanent magnet-type synchronous motor detects, through a current draw-in operation, an amount of deviation between an origin of a magnetic pole position of a permanent magnet that makes up a rotor of a permanent magnet-type synchronous motor, and an origin of an output signal of a magnetic pole position sensor, and correcting the output signal of the magnetic pole position sensor on the basis of the amount of deviation, to thereby detect a true magnetic pole position. The detection device computes a phase current I | 03-03-2016 |
| 20160056282 | SEMICONDUCTOR DEVICE - In a semiconductor device including a bootstrap diode and a high voltage electric field transistor on a p-type semiconductor substrate, a cavity is formed in an n | 02-25-2016 |
| 20160056248 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a first main electrode terminal and second main electrode terminal disposed on the principal surface of a semiconductor substrate so as to be spaced from one another, an insulating film formed on the principal surface of the semiconductor substrate, and a thin film resistance layer. One end side of the thin film resistance layer is connected to the first main electrode terminal and the other end side of the thin film resistance layer is connected to the second main electrode terminal, the thin film resistance layer being spirally formed on the insulating film in such a way as to surround the first main electrode terminal. The thin film resistance layer extends while oscillating in a thickness direction of the semiconductor substrate. | 02-25-2016 |
| 20160056148 | SEMICONDUCTOR DEVICE - A semiconductor device is provided with a first well region of a first conduction type having a first voltage (voltage VB) applied thereto, a second well region of a second conduction type formed in the surface layer section of the first well region and having a second voltage (voltage VS) different from the first voltage applied thereto, and a charge extracting region of the first conduction type formed in the surface layer section of the second well region and having the first voltage applied thereto. This inhibits the operation of a parasitic bipolar transistor. | 02-25-2016 |
| 20160056144 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device includes: depositing a thin film semiconductor layer on a semiconductor substrate with an insulating film therebetween, the insulating film having been formed on a surface of the semiconductor substrate; ion-implanting first impurity ions into the thin film semiconductor layer under a condition where a range of the first impurity ions becomes smaller than a film thickness of the thin film semiconductor layer when being deposited; and selectively ion-implanting second impurity ions into the thin film semiconductor layer with a dose quantity more than a dose quantity of the first impurity ions, in which a diode for detecting temperature is formed by a region into which the first impurity ions have been implanted and a region into which the second impurity ions have been implanted in the thin film semiconductor layer. | 02-25-2016 |
| 20160043166 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a vertical trench gate element portion and a lateral n-channel element portion for control which includes a well diffusion region, and a junction edge termination region which surrounds the vertical trench gate element portion and the lateral n-channel element portion for control. The junction edge termination region includes an oxide layer, a sustain region in contact with a trench provided at the end, and a diffusion region in contact with the sustain region. The diffusion region is deeper than the base region and has low concentration. The sustain region is shallower than the diffusion region and has high concentration. The well diffusion region is deeper than the base region and the sustain region and has low concentration. The breakdown voltage of the junction edge termination region and the well diffusion region is higher than that of the vertical trench gate element portion. | 02-11-2016 |
| 20160043073 | SEMICONDUCTOR DEVICE - An IGBT is disposed in an IGBT portion, and an FWD is disposed in an FWD portion. A p-type base region and an n | 02-11-2016 |
| 20160043067 | SEMICONDUCTOR DEVICE - In a high-side region, a first n-diffusion region, in which a PMOS constituting a gate drive circuit is formed, and a second n-diffusion region, in which a p-diffusion region is formed, are provided on a surface layer of a p | 02-11-2016 |
| 20160036369 | DRIVE DEVICE - A drive device for controlling an electric motor, including a processor, and a non-transitory storage medium containing program instructions, execution of which by the process causes the drive device to provide functions of a customization unit and a core unit. The customization unit receives, from an external device, a command value designating an operating state of the electric motor, converts the command value using a predetermined reference value, and outputs the converted command value. The core unit receives the converted command value from the customization unit, recovers a physical quantity from the received converted command value, and controls the electric motor in accordance with the recovered physical quantity. | 02-04-2016 |
| 20160036319 | POWER FACTOR CORRECTION CIRCUIT - A power factor correction circuit includes a rectifier that rectifies AC power supply voltage, a series circuit of an inductor and a semiconductor switch connected between the rectifier circuit output terminals, and a series circuit of a diode and a smoothing capacitor connected to both ends of the semiconductor switch, a load connected to both ends of the smoothing capacitor, so that the power factor on the input side of the rectifier circuit is corrected by the switching operation of the semiconductor switch. This power factor correction circuit includes a control circuit that controls the switching frequency of the semiconductor switch such that the switching frequency becomes maximum when the ripple of a current flowing through the inductor becomes maximum. According to this power factor correction circuit, normal mode noise can be reduced, and the size of a filter circuit can be decreased. | 02-04-2016 |
| 20160036316 | INSULATED GATE SEMICONDUCTOR DEVICE - An insulated gate semiconductor device includes an insulated gate semiconductor element, an output current detection unit, a voltage detection unit, and a heat generation amount suppression unit. The insulated gate semiconductor element on-operates by receiving a first gate voltage at a control terminal, and switches and outputs an input voltage to a load. The output current detection unit detects an output current to the load. The voltage detection unit detects an on-voltage of the insulated gate semiconductor element. The heat generation amount suppression unit sets a gate voltage to be applied to the control terminal of the insulated gate semiconductor element higher than the first gate voltage in response to the output current exceeding a rated current value and the on-voltage being lower than a first threshold voltage. | 02-04-2016 |
| 20160036315 | DRIVE CIRCUIT AND SEMICONDUCTOR DEVICE - Malfunction can be reliably avoided even when a signal that drives a high side power device is not normally transmitted in a level shift circuit. In a drive circuit, a pulse generator circuit generates a set signal and reset signal that causes a high side power device to be turned on or off. The pulse generator circuit provides set and reset signals, via a level shift circuit, to a high side drive circuit. A high side potential (a high side reference potential or a high side power supply potential) is detected by a high side potential detector circuit. A high side potential determination circuit determines a change in potential that impedes the transmission of the set signal or reset signal in the level shift circuit, and causes the pulse generator circuit to regenerate the set signal or reset signal when the timing of the detection coincides with the timing at which the set signal or reset signal is generated. | 02-04-2016 |
| 20160036248 | PARALLEL MONITORING CIRCUIT FOR CAPACITOR - A capacitor charging-discharging system, including a plurality of serially connected capacitors, a voltage source for setting an equalization potential, and a plurality of parallel monitoring circuit. Each parallel monitoring circuit is connected to the two ends electrodes of one capacitor, and includes: a voltage dividing circuit configured to resistively divide and attenuate two voltages respectively on the two end electrodes of the one capacitor, a differential amplifier configured to amplify a difference between the two divided voltages to thereby detecting a charge potential of the one capacitor, a comparator configured to compare the charge potential with the equalization potential, and a charge current bypass circuit configured to control charge current of the one capacitor, based on an output of the comparator, so that the charge potential of the one capacitor matches the equalization potential. | 02-04-2016 |
| 20160035881 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A super junction MOSFET includes a parallel pn layer including a plurality of pn junctions and in which an n-type drift region and a p-type partition region interposed between the pn junctions are alternately arranged and contact each other, a MOS gate structure on the surface of the parallel pn layer, and an n-type buffer layer in contact with an opposite main surface. The impurity concentration of the buffer layer is equal to or less than that of the n-type drift region. At least one of the p-type partition regions in the parallel pn layer is replaced with an n | 02-04-2016 |
| 20160035690 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A solder joint layer has a structure in which plural fine-grained second crystal sections ( | 02-04-2016 |
| 20160035683 | SEMICONDUCTOR DEVICE - A highly reliable semiconductor device capable of heavy current conduction and high temperature operation has a module structure in which a semiconductor chip and a circuit pattern are electrically connected via a wire. A front surface metal film is formed on a front surface electrode of the chip, and the wire is bonded to the front surface metal film by wire bonding. The chip has a front surface electrode on the front surface of an Si substrate or an SiC substrate, and has a rear surface substrate on the rear surface thereof. The front surface metal film is a Ni film or a Ni alloy film of having a thickness ranging from 3 μm to 7 μm. The wire is an Al wire having an increased recrystallizing temperature and improved strength due to controlling the crystal grain sizes before wire bonding to a range of 1 μm to 20 μm. | 02-04-2016 |
| 20160030882 | GAS ABSORPTION TOWER, METHOD FOR MANUFACTURING A GAS ABSORPTION TOWER, AND VESSEL - A gas absorption tower for performing gas absorption with improved efficiency by bringing a gaseous matter and fluid into contact with each other, the gas absorption tower includes an introducing portion into which the gaseous matter and the fluid are introduced from outside; an absorbing portion for performing gas absorption by bringing the gaseous matter and the fluid, which are supplied from the introducing portion, into contact with each other, the absorbing portion having defined therein an internal space into which the gaseous matter is supplied from the introducing portion; and a spray device for spraying the fluid into the gaseous matter in the internal space; and a discharge portion for discharging the gaseous matter, subjected to the gas absorption, outside of the gas absorption tower. Preferably the absorbing portion has a cylindrical piping component which is divided into a plurality of parts in a central axis direction thereof. | 02-04-2016 |
| 20160028301 | RESONANCE SUPPRESSION DEVICE - The present invention whose object is to reduce compensation current at the time when suppressing harmonic distortion caused by harmonic voltage, to reduce capacitance of an inverter, a resonance suppression device configured to suppress resonance which occurs when a power facility such as a wind power generator is connected to a power system includes: an inverter configured to supply alternating current to the power system, the inverter being in parallel with the power facility; a current command value generation unit in which voltage at a connection point between the power facility and the power system is inputted thereto and a current command value is obtained by multiplying, by a transfer function, a harmonic component contained in the voltage at the connection point; and a current control unit configured to control the alternating current outputted from the inverter based on the current command value. | 01-28-2016 |
| 20160028232 | POWER CONVERSION DEVICE - A power conversion device includes an AC power source configured to output an AC voltage, a DC power source configured to output a plurality of DC voltages having different levels, an inverter configured to receive the AC voltage and the plurality of DC voltages and output an output voltage by boosting the AC voltage in a booster mode in accordance with first and second control signals, the booster mode being a mode in which a level of the AC voltage is smaller than a predetermined value, a reactor configured to smooth the output voltage of the inverter, and a control circuit configured to generate the first and second control signals using a first and second carrier signals having different frequencies, respectively, in the booster mode, and selectively output the first or second control signal in accordance with the level of the AC voltage from the AC power source. | 01-28-2016 |
| 20160028224 | THREE-LEVEL INVERTER - A series circuit of capacitors and a series circuit of semiconductor switches such as SiC-MOSFETs are connected in parallel to a direct current power source, and one end of a bidirectional switch formed of semiconductor switches, such as IGBTs, and diodes, such as SiC-SBDs (Silicon Carbide Schottky Barrier Diodes), is connected to a series connection point (an M point) of the capacitors, while the other end of the bidirectional switch is connected to a series connection point of the semiconductor switches, in a three-level inverter that outputs three voltage levels by operating the semiconductor switches so as to satisfy at least one of the condition that the peak value of an alternating current output voltage V | 01-28-2016 |
| 20160027906 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A p-layer on a surface layer of one of n | 01-28-2016 |
| 20160027866 | SEMICONDUCTOR DEVICE - A semiconductor device, including: a semiconductor substrate of a first conductivity type, the semiconductor substrate having an edge termination area adjacent to an outermost periphery thereof; an anode structure provided in a bottom surface of the semiconductor substrate; a cathode region of the first conductivity type selectively provided in a top surface of the semiconductor substrate at an inner side of the edge termination area; a cathode electrode on the cathode layer; and an isolation region of a second conductivity type in the outermost periphery of the semiconductor substrate, the isolation region having a vertically elongated shape such that a bottom of the isolation region is connected to an outermost periphery of the anode structure on the bottom surface of the semiconductor substrate and a top of the isolation region reaches the top surface of the semiconductor substrate. | 01-28-2016 |
| 20160020685 | SEMICONDUCTOR DEVICE AND POWER CONVERTER EQUIPMENT - A semiconductor device that has a level shift circuit, an anterior stage circuit, and a posterior stage circuit. The level shift circuit transmits an input signal from a primary potential system to a secondary potential system different from the primary potential system. The anterior stage circuit including a first transistor receives a gate driving signal delivered by the level shift circuit. The posterior stage circuit including a second transistor with the same channel type as that of the first transistor drives a switching element according to the output signal from the first transistor. The threshold voltage of the first transistor is set at a lower value than the threshold voltage of the second transistor. | 01-21-2016 |
| 20160020276 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a first semiconductor region of a second conductivity type selectively formed in the main surface of the semiconductor substrate of a first conductivity type so as to be between a front surface structure of a first semiconductor element and a front surface structure of a second semiconductor element and so as to surround the front surface structure of the first semiconductor element and the front surface structure of the second semiconductor element; a second semiconductor region of the first conductivity type in the main surface of the semiconductor substrate outside the first semiconductor region and separated therefrom; and at least one trench filled with an insulating layer in the first semiconductor region between the first semiconductor element and the second semiconductor element, forming an isolation structure isolating the front surface structure of the first semiconductor element from the front surface structure of the second semiconductor element. | 01-21-2016 |
| 20160020101 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - Provided is a semiconductor device manufacturing method such that miniaturization of a parallel p-n layer can be achieved, and on-state resistance can be reduced. Firstly, deposition of an n | 01-21-2016 |
| 20160006429 | DRIVE DEVICE FOR INSULATED-GATE SEMICONDUCTOR ELEMENT, AND POWER CONVERTER - A driver circuit for turning ON and OFF one of two parallel-connected insulated-gate semiconductor elements includes a voltage control circuit that controls a level of a power supply voltage in response to a detected element temperature of the one semiconductor element, a constant current supply section, responsive to a drive signal, for supplying a constant current to a gate of the one semiconductor element to turn the one semiconductor element ON, the power supply voltage being supplied to the constant current supply section from the voltage control circuit, and a discharge circuit, responsive to the drive signal, for discharging an electric charge accumulated in the gate to turn the one semiconductor element OFF. | 01-07-2016 |
| 20160006427 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device capable of preventing a malfunction of a high-side gate driver circuit that is caused by a negative voltage surge. A diode is connected between a p-type bulk substrate configuring a semiconductor layer, and a first potential (GND potential), and a signal is transmitted from a control circuit that is formed in an n diffusion region configuring a first semiconductor region through a first level down circuit and a first level up circuit to a high-side gate driver circuit that is formed in an n diffusion region configuring a second semiconductor region. As a result, a malfunction of the high-side gate driver circuit that is caused by a negative voltage surge can be prevented. | 01-07-2016 |
| 20160006242 | POWER SOURCE SYSTEM - A power source system for supplying DC (direct current) power to a load, including first and second power source apparatuses and a control apparatus. The first power source apparatus is connected to an alternating current (AC) power source, and configured to convert AC power received from the AC power source to first DC power. The second power source apparatus is connected to a battery, and configured to convert power of the battery to second DC power. The control apparatus is connected to the first and second power source apparatuses, and configured to so control the first and second power source apparatuses that the DC power supplied to the load is the first DC power in a normal mode, the second DC power in a back-up mode, and a combination of the first and second DC power in an assist mode. | 01-07-2016 |
| 20160005881 | STACKED FILMS AND METHOD FOR PRODUCING STACKED FILMS - Stacked films includes mica, a self-assembled film and a graphene film. The self-assembled film is formed on the mica. The graphene film is formed over the self-assembled film. The molecules that make up the self-assembled film have hydrophobic main chains. | 01-07-2016 |
| 20160005856 | MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS - A screen oxide film is formed on an n-drift layer ( | 01-07-2016 |
| 20160005606 | IMPURITY INTRODUCING METHOD, IMPURITY INTRODUCING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT - A method for introducing impurity into a semiconductor substrate includes bringing a solution containing a compound of an impurity element into contact with a primary surface of a semiconductor substrate; and irradiating the primary surface of the semiconductor substrate with a laser beam through the solution to raise a temperature of the primary surface of the semiconductor substrate at a position irradiated by the laser beam so as to dope the impurity element into the semiconductor substrate. The laser beam irradiation is performed such that the raised temperature does not return to room temperature until a prescribed dose of the impurity element is caused to be doped into the semiconductor substrate. | 01-07-2016 |
| 20160005297 | ALARM OUTPUT CIRCUIT - An alarm output circuit can cope with simultaneous generations of a plurality of alarm factors based on alarm signals output from one output terminal. The alarm output circuit notifies externally of generations of alarm factors in an intelligent power module. A digital/analog converter, into which digital data indicating the presences and absences of generations of the alarm factors is input, outputs corresponding voltages. A voltage control oscillator outputs a signal of a frequency corresponding to an output voltage of the digital/analog converter. | 01-07-2016 |
| 20150381738 | MEASUREMENT DATA PROVIDING SERVICE SYSTEM - Measurement data (raw data) transmitted via a network is received by a sensor data obtainment unit, a sensor ID is extracted from the received data and is provided to an ID data detection unit, the ID data detection unit provides detected ID data to an ID retrieval unit, and the ID retrieval unit retrieves an ID table and extracts a company name and a sensor type by using the sensor ID as a key. A calculation expression file and a parameter file are referred to on the basis of the extracted company name and sensor type, data obtained by referencing is provided to a data processing unit and/or a data correction unit, and the received measurement data is corrected to significant measurement data. A process result is provided to an external user from a signal processing unit via a measured value file. | 12-31-2015 |
| 20150381101 | POWER CONVERTER - A method for a power conversion apparatus to drive an electric motor using a power semiconductor device. The method includes detecting or estimating a temperature of the power semiconductor device to thereby obtain a detected or estimated temperature value, adjusting a torque command of the electric motor, so that the temperature of the power semiconductor device matches a preset temperature when the detected or estimated temperature value is equal to or higher than the preset temperature, and controlling the power semiconductor device using the adjusted torque command. | 12-31-2015 |
| 20150381064 | BIDIRECTIONAL DC/DC CONVERTER - A bidirectional DC/DC converter includes first and second control circuits, and first and second bridge circuits respectively connected to first and second direct current voltage supplies. In one embodiment variant, when power is supplied from the first direct current voltage supply to the second direct current voltage supply, the first control circuit carries out PFM control of the first bridge circuit at a frequency equal to or lower than the resonance frequency of an LC resonant circuit in accordance with a control amount based on the voltage and current of the second direct current voltage supply. When power is supplied in the other direction, the second control circuit carries out fixed frequency control of the second bridge circuit, using phase shift control or the like, in accordance with a control amount based on the voltage and current of the first direct current voltage supply. | 12-31-2015 |
| 20150381027 | RESONANCE SUPPRESSION DEVICE - A resonance suppression device, in which power loss and apparatus capacitance are reduced by outputting a compensating current only while a voltage resonance is being generated, and which suppresses resonance generated by connection of a power apparatus to a power system. In one embodiment, the device includes a capacitance change detector that detects a change of an electrostatic capacitance (impedance) connected to the power system. When the resonance detector detects the resonance, a current command value generator generates the current command value on the basis of harmonic components included in a current supplied from the power apparatus to the power system. When the impedance change detector detects a change of the impedance, the current command value generator generates the current command value so as to reduce the compensating current. | 12-31-2015 |
| 20150380995 | EMBEDDED PERMANENT MAGNET TYPE ROTATING ELECTRIC MACHINE - An embedded permanent magnet type motor, which has one pole configured of two permanent magnets and has a plurality of poles of permanent magnets embedded in a rotor, includes a rotor whose magnet embedding holes communicate with a rotor outer periphery. The rotor has, between adjacent poles, a q-axis projection projecting in a direction away from a rotor rotation center. The magnet embedding holes are disposed so as to form an inverted V shape. An outer peripheral edge portion on the outer side of the permanent magnets has a curvature radius smaller than the distance from a rotation center axis to a rotor outermost peripheral portion. Circular intermediate plates of an outside diameter larger than the outside diameter of rotor steel plates are provided in intermediate positions in the rotor in a rotor rotation axis direction. | 12-31-2015 |
| 20150380538 | TRENCH GATE MOS SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A p-type base region, in which an n | 12-31-2015 |
| 20150380498 | METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE PRODUCED THEREBY - A method for producing a semiconductor device having a nitride-based semiconductor layer includes forming a first nitride-based semiconductor layer of Al | 12-31-2015 |
| 20150380401 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first element portion including an IGBT and a second element portion including a circuit that controls the IGBT on the same semiconductor substrate. The novel structure reduces the size of the entire circuit and includes a drift region on a front surface of the substrate; a region in a surface layer of the drift region which is opposite to the substrate; an insulator layer that passes through the region in a depth direction and reaches the drift region, the insulator layer provided at a boundary between the first and second element portions, and separating the region into a first region in the first element portion and having the emitter potential of the IGBT and a second region in the second element portion; and a first contact electrode that contacts the second region, and that is electrically connected to an emitter electrode of the IGBT. | 12-31-2015 |
| 20150380400 | SEMICONDUCTOR DEVICE - A semiconductor device provides reduced size and increased performance, and includes a semiconductor layer having a surface layer including first and second semiconductor regions connected to first and second potentials, respectively; a third semiconductor region provided inside the first semiconductor region and connected to a third potential; a fourth semiconductor region provided inside the second semiconductor region and connected to the third potential; a plurality of a first element provided in each of the first, second, third, and fourth semiconductor regions; a first isolation region provided between and in contact with the first and second semiconductor regions, electrically connected to the semiconductor layer, and connected to a fourth potential; and a second isolation region which encloses the periphery of and maintains a withstand voltage of the first and second semiconductor regions. The third and fourth potentials are lower than the second potential, which is lower than the first potential. | 12-31-2015 |
| 20150380368 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE - A semiconductor device has a module structure in which a semiconductor element and a circuit layer are electrically connected to each other by a wire. A front metal layer is formed on a surface of a top side electrode of the semiconductor element and the wire is bonded to the front metal layer by wire bonding. The front metal layer has a higher hardness than the top side electrode or the wire. A bonding interface of the wire with the metal film has a recrystallization temperature that is equal to or higher than 175° C. According to this structure, it is possible to improve the power cycle resistance of the semiconductor device. | 12-31-2015 |
| 20150380335 | SEMICONDUCTOR DEVICE - A semiconductor device includes a molded body obtained by sealing, with a sealing material, a member including a semiconductor element, an insulating substrate which is bonded to one surface of the semiconductor element, and a printed circuit board which is used for a connection to an external circuit and is bonded to another surface of the semiconductor element. The sealing material includes a first sealing material which is a nanocomposite resin including an epoxy base resin, a curing agent, and an inorganic filler with an average particle size of 1 nm to 100 nm; and a second sealing material which is a thermosetting resin, a thermoplastic resin, or a mixture thereof without an inorganic filler. The sealing material is less likely to be degraded by thermal oxidation, even when the semiconductor element operates at a high temperature of 175° C. or higher, is crack resistant, and has high reliability and durability. | 12-31-2015 |
| 20150380292 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes: bonding at least a part of the rear surface of a semiconductor wafer, and a supporting substrate in use of using a silane coupling agent; forming a functional structure on a front surface of the semiconductor wafer; placing a condensation point of laser light transmitted through the semiconductor wafer on a bonding interface between the semiconductor wafer and the supporting substrate, and irradiating the bonding interface with the laser light, thereby forming a fracture layer on at least a part of an outer circumferential section of the bonding interface; separating the bonding interface; and carrying out rear surface processing on the rear surface of the semiconductor wafer. | 12-31-2015 |
| 20150380248 | METHOD FOR MANUFACTURING A SILICON CARBIDE SEMICONDUCTOR ELEMENT - An ion implantation mask, which is an inorganic insulating film, is formed on a silicon carbide substrate. A mask portion and two regions of an opened ion implantation portion are formed in the ion implantation mask by dry etching. At that time, a residual portion which is thinner than the mask portion is formed in the bottom of the opened ion implantation portion. Then, ions are implanted through the ion implantation mask to form a predetermined semiconductor region in the silicon carbide substrate. According to this structure, it is possible to prevent an increase in the roughness of the surface of the silicon carbide substrate and to improve breakdown voltage. | 12-31-2015 |
| 20150380243 | SILICON CARBIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SILICON CARBIDE SEMICONDUCTOR DEVICE - Silicon-containing gas, carbon-containing gas, and chlorine-containing gas are introduced into a reacting furnace. Next, a SiC epitaxial film is grown on the front surface of a 4H-SiC substrate by a halide CVD method in a mixed gas atmosphere made of the plurality of gasses introduced. In the SiC epitaxial film growing, a SiC epitaxial film of a first predetermined thickness is grown at a first growth rate. The first growth rate is increased from an initial growth rate to a higher growth rate. Furthermore, the SiC epitaxial film is grown, at a second growth rate, until the thickness of the SiC epitaxial film reaches a second predetermined thickness. By so doing, it is possible to improve the crystallinity of a silicon carbide semiconductor film grown in a gas atmosphere containing halide. | 12-31-2015 |
| 20150380238 | METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE - A method for producing a semiconductor device having a nitride-based semiconductor layer includes forming an aluminum nitride layer on a surface of the nitride-based semiconductor layer at a forming temperature and in a growth atmosphere for aluminum nitride; and performing a thermal treatment on the nitride-based semiconductor layer and the aluminum nitride layer, at a treatment temperature that is higher than the forming temperature and in the growth atmosphere for aluminum nitride. For example, an n-GaN layer is formed on an n-GaN substrate, and thereafter the n-GaN layer is doped with an impurity. A cap layer of an epitaxial film made up of AlN is formed, by MOCVD, on the surface of the n-GaN layer. Thermal treatment for activation annealing activates the impurity in the n-GaN layer in an atmosphere that causes AlN to grow, or in an atmosphere in which growth and decomposition of AlN are substantially balanced. | 12-31-2015 |
| 20150378376 | SEMICONDUCTOR DEVICE DRIVE METHOD - A semiconductor device drive method achieves a balance between a lifetime and a detection sensitivity which are required for a temperature detection diode formed via an insulating film on a substrate on which an active element is formed. The semiconductor device drive method includes energizing the temperature detection diode with a constant current, the constant current having a current density value between an upper limit defined based on the lifetime of the temperature detection diode, and a lower defined based on a variation allowable voltage of an output voltage of the temperature detection diode with respect to a standard deviation. | 12-31-2015 |
| 20150377970 | CONTROL DEVICE AND ELECTRIC MOTOR DRIVING DEVICE - A control device includes an acquiring unit that acquires via a communication line reference value data indicating predetermined reference values for a torque and a rotating speed, which are parameters indicating an operating state of an electric motor, from a driving device that controls driving of the electric motor, and a calculating unit that acquires via the communication line present value data indicating one of a physical quantity, which is a value of the respective parameters measured in the electric motor during operation and a ratio of the physical quantity to the reference value from the driving device, and calculates the other one of the physical quantity and the ratio from the present value data and the reference value data. | 12-31-2015 |
| 20150377535 | CONTROL APPARATUS FOR COOLING SYSTEM - A cooling system includes a cooling tower, a refrigeration device, a cooling fan provided in the cooling tower, a cooling water pump which circulates cooling water between the cooling tower and the refrigeration device, a temperature sensor which detects the cooling water temperature at an inlet or outlet of the cooling tower, and an inverter apparatus which variably controls the speed of the cooling tower. The output frequency of the inverter apparatus is gradually reduced after the output frequency reaches an upper limit frequency, a condition at which a temperature detection value of the cooling water does not rise despite the reduction in the output frequency is stored, and the inverter apparatus is operated thereafter on the basis of the stored condition. | 12-31-2015 |
| 20150375624 | CONTROLLER AND MAP FILE CONVERSION DEVICE - A controller for controlling a drive device that executes drive control of a motor. The controller includes a processing device and a memory having program instructions stored thereon. Execution of the program instructions by the processing device causes the controller to obtain a symbol name provided to indicate data that are an object of reading or updating, to convert the obtained symbol name into an address with reference to a map file, where the map file uses each symbol name included in a source code of a control program as an identifier of the data corresponding to each symbol name, and associates each symbol name with an address of a storage area storing the corresponding data, and to instruct the drive device to read or update the data stored in the storage area indicated by the address obtained through the conversion. | 12-31-2015 |
| 20150372672 | POWER DEVICE DRIVE CIRCUIT - A power device drive circuit reduces the short-circuit resistance of a power device that switches an input voltage. The power device drive circuit includes an output amplifier that applies a control voltage to a control terminal of the power device so as to be turned on and off, and an internal power supply circuit that generates a drive voltage of the output amplifier in accordance with a change in the input voltage, thereby causing the control voltage to change. In particular, the internal power supply circuit reduces the drive voltage of the output amplifier when the input voltage rises, thereby reducing the short-circuit current of the power device. | 12-24-2015 |
| 20150372671 | SWITCHING ELEMENT DRIVING CIRCUIT - A switching element driving circuit includes a current detection unit that outputs a driving stop signal based on a level of current flowing through the switching element, and first and second control elements each connected to a control terminal of the switching element. A comparator controls the first control element based on a result of comparison of an output voltage of the driving circuit main unit with a first reference voltage. A differential amplifier drives the second control element in accordance with a voltage difference between the output voltage of the driving circuit main unit and a second reference so as to maintain the output voltage equal to the second reference voltage. An operation stopping unit stops the comparator and the differential amplifier to drive the first and second control elements, respectively, in response to the driving stop signal. | 12-24-2015 |
| 20150372614 | AC-DC CONVERTER - An AC to DC converter is provided with: a rectifier circuit that rectifies an AC voltage generated by an AC voltage source; and a plurality of switching units that collectively receive an output voltage of the rectifier circuit through an inductor, and that are connected in series at an input side, each of the switching units having a semiconductor switching device, a diode, and a capacitor, and performing ON/OFF switching of the semiconductor switching device provided therein to step up a voltage received from the rectifier circuit, each of the switching units supplying the stepped-up voltage to the capacitor through the diode so that a resulting DC across the capacitor can be provided, as a DC output voltage of the switching unit, to a respective load to be connected to terminals of the capacitor. | 12-24-2015 |
| 20150372471 | SEMICONDUCTOR MODULE - A semiconductor module which includes a plurality of control circuits that respectively drive a plurality of semiconductor elements on and off and a plurality of signal output circuits for the respective control circuits and which output operation status information, where the signal output circuits are respectively provided with signal output terminals having an open-drain configuration, and the signal output terminals each are connected to an internal lead frame on which the power semiconductor elements and the control circuits are mounted. | 12-24-2015 |
| 20150372095 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A MOS gate structure including a p base region, a p epitaxial layer, an n | 12-24-2015 |
| 20150370279 | REFERENCE VOLTAGE CIRCUIT - A reference voltage circuit including a constant voltage circuit and a resistance voltage divider circuit. The constant voltage circuit includes a Zener diode, and a bias current circuit connected in series with the Zener diode and causing a constant current to flow into the Zener diode. The resistance voltage divider circuit is connected in parallel with the Zener diode, and includes first and second resistors connected in series. The first resistor is connected to a cathode side of the Zener diode, and is formed of a low temperature coefficient resistor body that is temperature-independent. The second resistor is connected to an anode side of the Zener diode, and is formed of a resistor body having temperature characteristics that are the reverse of output temperature characteristics of the Zener diode. | 12-24-2015 |
| 20150364613 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device and a method for forming the same. The device has a substrate including one and another surfaces. A first semiconductor region of a first conductivity type is formed in the substrate. A second conductivity type, second semiconductor region is provided in a first surface layer, that includes the one surface, of the substrate. A first electrode is in contact with the second semiconductor region to form a junction therebetween. A first conductivity type, third semiconductor region is provided in a second surface layer, that includes the another surface, of the substrate. The third semiconductor region has a higher impurity concentration than the first semiconductor region. A fourth semiconductor region of the second conductivity type is provided in the first semiconductor region at a location deeper than the third semiconductor region from the another surface. A second electrode is in contact with the third semiconductor region. | 12-17-2015 |
| 20150364577 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A method of manufacturing a semiconductor device includes forming a first parallel pn layer; depositing a first-conductivity-type first semiconductor layer on a surface of the first parallel pn layer in a step that further includes forming a second parallel pn layer by selectively introducing second-conductivity-type impurities into the first semiconductor layer; and forming first second-conductivity-type impurity regions in positions opposed in a depth direction to regions of the first parallel pn layer in which second-conductivity-type semiconductor regions are formed; and forming a local insulating film on a surface of the first semiconductor layer in a termination structure portion so that an end portion of the local insulating film is positioned on the first second-conductivity-type impurity region, by heating at a low temperature effective to suppress diffusion of the first second-conductivity-type impurity regions. The method may further include diffusing the first second conductivity type impurity regions in a second heat treatment. | 12-17-2015 |
| 20150364470 | SEMICONDUCTOR INTEGRATED CIRCUIT - A low side control circuit and a high side control circuit are disposed in first and second n type well regions, respectively. A third n type well region is formed around the second n type well region. The first n | 12-17-2015 |
| 20150361567 | POSITIVE ELECTRODE CATALYST AND DEVICE - A positive electrode catalyst, for use in a positive electrode in a device provided with the positive electrode and a negative electrode, in which a reaction represented by 4 OH | 12-17-2015 |
| 20150357463 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a channel-forming region of a first conductivity type; a first main electrode region of a second conductivity type disposed in a portion of an upper part of the channel-forming region; a drift region of the second conductivity type that is disposed in an upper part of the channel-forming region apart from the first main electrode region; a second main electrode region of the second conductivity type that is disposed in a part of an upper part of the drift region; and a stopper region of the second conductivity type that is disposed at an end region of the drift region apart from the first main electrode region and has a higher concentration than the drift region. The stopper region restricts extension of a depletion layer developing at the boundary of the pn junction between the channel-forming region and the drift region. | 12-10-2015 |
| 20150349583 | SOLAR POWER GENERATION SYSTEM - A solar power generation system includes a plurality of solar cell groups, a plurality of chopper units each of which corresponds to one of the plurality of solar cell groups and raises a DC voltage obtained from the corresponding solar cell group. Each of the plurality of chopper units includes a first operating point control unit that respectively controls an output current of the corresponding chopper unit to optimize an operating point of each of the plurality of solar cell groups so as to obtain maximum power from the respective solar cell groups, and an inverter, which receives the DC voltage obtained from the plurality of chopper units and outputs AC power. The inverter includes a second operating point control unit that controls the DC voltage obtained from the plurality of chopper units to optimize the operating point of each of the plurality of solar cell groups. | 12-03-2015 |
| 20150349144 | SEMICONDUCTOR DEVICE - The semiconductor device includes a p-anode region disposed on an n-drift region, and a p-diffusion region disposed so as to be in contact with the p-anode region on the n-drift region. A resistance region disposed so as to be in contact with the p-diffusion region on an n | 12-03-2015 |
| 20150349111 | SEMICONDUCTOR DEVICE - A semiconductor device includes a drift region of a first conductivity type, a channel forming region of a second conductivity type that is selectively provided in a first main surface of the drift region, a first main electrode region of the first conductivity type that is selectively provided in an upper part of the channel forming region, a second main electrode region of the second conductivity type that is provided in a second main surface of the drift region, and a high-concentration region of the first conductivity type that is provided in a portion of the drift region below the channel forming region so as to be separated from the channel forming region. The high-concentration region has a higher impurity concentration than the drift region and the total amount of first-conductivity-type impurities in the high-concentration region is equal to or less than 2.0×10 | 12-03-2015 |
| 20150349103 | SEMICONDUCTOR DEVICE - A semiconductor device has mesa form first and second p-type base regions and a floating p-type region provided in a surface layer of an n−-type drift layer. The first p-type base region and floating p-type region are separated by a first trench. The second p-type base region is separated from the floating p-type region by a second trench. The first and second p-type base regions are conductively connected to an emitter electrode. The floating p-type region is in a floating state electrically isolated from the emitter electrode. A first gate electrode is provided via a first gate insulating film inside the first trench. An emitter potential second gate electrode is provided via a second gate insulating film inside the second trench. Therefore, di/dt controllability when turning on the semiconductor device can be increased. | 12-03-2015 |
| 20150348818 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - Provided is a semiconductor device manufacturing method that includes joining a support substrate to a back side of a semiconductor wafer across a ceramic adhesive layer and a mask, to form a joined body. The method further includes forming a functional structure on a front side of the semiconductor wafer. The method further includes detaching the support substrate from the semiconductor wafer by removing the ceramic adhesive layer and the mask. The method further includes a back side processing step of carrying out back side processing on the back side of the semiconductor wafer. | 12-03-2015 |
| 20150346760 | DISTRIBUTION DEVICE, DISTRIBUTION SYSTEM, AND DISTRIBUTION METHOD - Provided is distribution device that distributes time information to at least one sensor device, the distribution device including a storage unit that stores a time adjustment amount to be used for adjusting a local time, a calculation unit that calculates a time difference between a reference time and the local time, an adjustment unit that calculates an adjusted local time by adjusting the local time by an amount equal to or less than the time adjustment amount, when the time difference is greater than the time adjustment amount, and a distribution unit that distributes time information of the adjusted local time to the sensor device. | 12-03-2015 |
| 20150346619 | ELECTROPHOTOGRAPHIC PHOTOCONDUCTOR, PRODUCTION METHOD THEREOF, AND ELECTROPHOTOGRAPHIC APPARATUS - An electrophotographic photoconductor includes a conductive support; and a photoconductive layer that contains at least a charge generation material, a hole transport material, an electron transport material and a binder resin, and that is provided on the conductive support, wherein the photoconductive layer has an outermost layer that contains a charge generation material, a hole transport material, an electron transport material, a binder resin and a highly branched polymer that is obtained by polymerizing, in the presence of a polymerization initiator, a monomer having, in a molecule, two or more radically polymerizable double bonds and a monomer having, in a molecule, a long-chain alkyl group or an alicyclic group and at least one radically polymerizable double bond. The electrophotographic photoconductor exhibits superior operational stability and stably high image quality, without problems with image memory, a contact member, or image defects due to cracks caused by contamination by oils/fats or sebum. | 12-03-2015 |
| 20150346614 | ELECTROPHOTOGRAPHIC PHOTOCONDUCTOR, PRODUCTION METHOD THEREOF, AND ELECTROPHOTOGRAPHIC APPARATUS - An electrophotographic photoconductor includes a conductive support; a charge generation layer provided on the conductive support; and a charge transport layer containing a charge transport material, a binder resin, and a highly branched polymer having a long-chain alkyl group or an alicyclic group, provided on the charge generation layer as an outermost layer. The electrophotographic photoconductor has excellent contamination resistance against sebum or the like, stable electrical characteristics even upon repeated use, as well as superior transfer resistance and gas resistance. A method for producing the electrophotographic photoconductor is disclosed, as well as an electrophotographic apparatus including the electrophotographic photoconductor. | 12-03-2015 |
| 20150340441 | HIGH VOLTAGE SEMICONDUCTOR APPARATUS - A vertical high voltage semiconductor apparatus includes a first conductivity semiconductor substrate; a first conductivity semiconductor layer disposed on the semiconductor substrate and having an impurity concentration lower than the semiconductor substrate; a second conductivity semiconductor layer disposed on the first conductivity semiconductor layer; a second conductivity base layer disposed on the first conductivity semiconductor layer and the second conductivity semiconductor layer and, having an impurity concentration lower than the second conductivity semiconductor layer; and a first conductivity source region selectively disposed inside the base layer. In an edge termination portion, after a region of the second conductivity semiconductor layer is removed, in the first conductivity semiconductor layer having an impurity concentration lower than that of the semiconductor substrate, second conductivity layers having a low concentration are formed such that the second conductivity layer at the innermost perimeter, the second conductivity semiconductor layer, and the base layer do not contact. | 11-26-2015 |
| 20150340356 | SEMICONDUCTOR DEVICE - A protective diode is provided above a first guard ring region which surrounds an active region, with a field oxide film interposed there between. The protective diode may include a series pn zener diode in which a p+ layer and an n− layer are adjacent to each other. In a semiconductor device having the first guard ring region provided below the protective diode, cracks in the surface protective film may be prevented by providing a surface protective film that may be a polyimide film. The first guard ring region is provided below the protective diode and is connected to a second guard ring region that is provided in a portion other than the portion provided below the protective diode through a third guard ring region which is an intermediate region (R). Thus, when a surge voltage is applied, concentration of electric field on the outermost guard ring may be reduced. | 11-26-2015 |
| 20150340297 | POWER SEMICONDUCTOR MODULE - A power semiconductor module is equipped with: a frame made of an insulator; a first electrode plate made of a metal and fixed to a bottom opening of the frame; semiconductor chips electrically and physically connected to the first electrode plate; a multilayer substrate fixed to a principal surface of the first electrode plate; wiring members that electrically connect front surface electrodes of the semiconductor chips and a circuit plate of the multilayer substrate; a second electrode plate fixed to a top opening of the frame; and a metal block that has a first surface having a projected portion and a second surface disposed on a side opposite to the first surface and that is tapered from the first surface to the second surface, the projected portion being electrically and physically connected to the circuit plate of the multilayer substrate and the second surface being electrically and physically connected to the second electrode plate. | 11-26-2015 |
| 20150339208 | MONITORING METHOD AND COMPUTER DEVICE - In a method of monitoring processing load, every time a computer device executes each of a plurality of processes, for the interrupt of each of which a priority level is specified in advance, the computer device is caused to measure an index representing the processing load of each process, store the latest measurement value for each priority level, and update the maximum value with the latest measurement value when the latest measurement value exceeds the maximum value measured thus far. Further, with the reception from a host controller of a measurement result transmission request requesting transmission of the latest measurement value as a trigger, the computer device transmits the latest measurement value and maximum value at that time to the host controller, and the host controller stores the latest measurement value and maximum value transmitted from the computer device in a storage device. | 11-26-2015 |
| 20150333748 | SEMICONDUCTOR DEVICE - A horizontal MOSFET is arranged in parallel to a horizontal MOSFET and a portion of a return current IL which flows to a linear solenoid flows as a current to the horizontal MOSFET. Therefore, a current which flows to a parasitic transistor is reduced and it is possible to suppress the current which flows to the parasitic transistor provided in the horizontal MOSFET. Since the current which flows to the parasitic transistor is reduced, it is possible to prevent the erroneous operation and breakdown of a semiconductor device forming a synchronous rectification circuit. | 11-19-2015 |
| 20150332723 | MAGNETIC RECORDING MEDIUM AND METHOD FOR PRODUCING THE SAME - A patterned magnetic recording medium, accessible by a magnetic recording head, including a plurality of tracks, a width direction of each track and that of the magnetic recording head being of a skew angle. The patterned magnetic recording medium includes a plurality of magnetic dots, each corresponding to a recording bit, formed on a non-magnetic material. The plurality of magnetic dots are arranged in a plurality of arrays, each array corresponding to one of the tracks. Every N adjacent magnetic dots of the array define a polygon, one side thereof being parallel to the corresponding track, and another side thereof being parallel to a direction determined by the skew angle of the corresponding track. | 11-19-2015 |
| 20150322242 | NANOCOMPOSITE RESIN COMPOSITION - A nanocomposite resin composition having improved heat resistance, higher glass transition temperature, and excellent mechanical characteristics and thermal conductivity and cured nanocomposite resin material are disclosed. The resin composition comprises a thermosetting resin and/or a thermoplastic resin, a silane coupling agent, and an inorganic filler. The inorganic filler includes an inorganic filler with a particle diameter or long diameter of 1 nm to 99 nm and an inorganic filler with a particle diameter or long diameter of 100 nm to 100 μm. At least one of these inorganic fillers is formed of SiO | 11-12-2015 |
| 20150318847 | VOLTAGE CONTROLLED SWITCHING ELEMENT GATE DRIVE CIRCUIT - A voltage controlled switching element gate drive circuit makes it possible to suppress an occurrence of a malfunction, while suppressing surge voltage, surge current, and switching noise, when switching in a voltage controlled switching element. A gate drive circuit that supplies a gate voltage to the gate of a voltage controlled switching element, thus driving the voltage controlled switching element, includes a high potential side switching element and low potential side switching element connected in series, first variable resistors interposed between at least the high potential side switching element and a high potential power supply or the low potential side switching element and a low potential power supply, and a control circuit that adjusts the resistance values of the first variable resistors. | 11-05-2015 |
| 20150318502 | TRANSPARENT ORGANIC THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME - A highly transparent organic thin-film transistor that has superior transistor performance and can be applied to flexible devices includes: a transparent support substrate; a first gate electrode formed on the transparent support substrate; a second gate electrode formed on the first gate electrode; a polymeric gate-insulating layer formed on the second gate electrode; a source electrode and a drain electrode formed on the polymeric gate-insulating layer; and an organic semiconductor layer formed on the source electrode and the drain electrode. | 11-05-2015 |
| 20150311339 | SEMICONDUCTOR DEVICE - A semiconductor device can ensure predetermined current capacity under maintaining breakdown voltage characteristics and can promote size reduction. A first n-type offset-diffusion-region is disposed inside a p-type well region. In the first n-type offset-diffusion-region, a LOCOS film is disposed on the surface layer of a part sandwiched between an n | 10-29-2015 |
| 20150311328 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SEMICONDUCTOR DEVICE - A semiconductor device includes semiconductor layers of a first conductivity-type and a second conductivity-type stacked on a silicon carbide semiconductor and having differing impurity concentrations. Trenches disposed penetrating the semiconductor layer of the second conductivity-type form a planar striped pattern; and a gate electrode is disposed therein through a gate insulation film. First and second semiconductor regions respectively of the first and the second conductivity-types have impurity concentrations exceeding that of the semiconductor layer of the second conductivity-type and are selectively disposed therein. The depth of the second semiconductor region exceeds that of the semiconductor layer of the second conductivity-type, but not that of the trenches. The second semiconductor region is arranged at given intervals along the length of the trenches. In the silicon carbide semiconductor below the trench bottoms, a third semiconductor region of the second conductivity-type and having a floating potential is disposed covering the trench bottoms. | 10-29-2015 |
| 20150311285 | FABRICATION METHOD OF SEMICONDUCTOR DEVICE, EVALUATION METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE - A fabrication method of a semiconductor device that includes trench gate structures each having a gate electrode extending in a depth-direction of an element, where first trench gate structures contribute to controlling the element and second trench gate structures do not contribute. The fabrication method includes forming the trench gate structures on a front face of a semiconductor substrate; forming on the front face, an electrode pad connected to the gate electrode of at least one trench gate structure; executing screening by applying a predetermined voltage between the electrode pad and an electrode portion having a potential other than a gate potential, to apply the predetermined voltage to gate insulator films in contact with each gate electrode connected to the electrode pad; and forming the second trench gate structures having the gate electrodes connected to the electrode pad, by short-circuiting the electrode portion to the electrode pad after executing screening. | 10-29-2015 |
| 20150311279 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A front surface element structure is formed on the front surface side of an n | 10-29-2015 |
| 20150309090 | OVERCURRENT DETECTION CIRCUIT - An overcurrent detection circuit includes a current detection resistor that generates a voltage in proportion to current flowing through a switching element and a comparator that compares the voltage detected via the current detection resistor and a reference voltage generated by a reference voltage generation circuit to thereby detect overcurrent flowing through the switching element. In particular, the reference voltage generation circuit includes: a first resistance voltage dividing circuit that resistance-divides a standard voltage by connecting, in series, two types of resistors having different temperature characteristics; a second resistance voltage dividing circuit that resistance-divides the standard voltage by connecting, in series, resistors having the same temperature characteristics; and an instrumentation amplifier that generates the reference voltage according to the difference between the divided output voltages of the first and second resistance voltage dividing circuits. | 10-29-2015 |
| 20150303935 | PHYSICAL QUANTITY SENSOR DEVICE AND METHOD OF ADJUSTING PHYSICAL QUANTITY SENSOR DEVICE - An analog signal is supplied to a first conversion section of a physical quantity sensor device, converted to digital, and set to be an initial output value of the first conversion section. Adjustment information for the first conversion section is calculated based on the error between the initial output value and a target output value of the first conversion section. Before an initial output value of a physical quantity sensor is measured for calculating initial setting information of a physical quantity sensor device, the first conversion section is adjusted based on the adjustment information. Also, a digital signal is supplied to a second conversion section of the physical quantity sensor device, converted to analog, and set to be an initial output value of the second conversion section. The second conversion section is adjusted based on adjustment information for the second conversion section. | 10-22-2015 |
| 20150303797 | SIGNAL TRANSMISSION CIRCUIT - A signal transmission circuit with a first circuit in a signal transmission side having first and second semiconductor switch elements transmitting a reference potential or power supply voltage of the first circuit to a second circuit by being alternatively driven on and off according to a multiple of signals. The second circuit in a signal reception side having a voltage conversion circuit, including an in-phase noise filter that eliminates in-phase noise superimposed on the voltage transmitted via the first and second semiconductor switch elements, generating first and second pulse signals in accordance with the transmitted voltage, a latch circuit latching each of the first and second pulse signals with the first and second pulse signals as a clock, and a signal analysis circuit analyzing the first and second pulse signals latched by the latch circuit, and generating an output signal according to the category of the multiple of signals. | 10-22-2015 |
| 20150303166 | SEMICONDUCTOR DEVICE - Provided is a wire bonding apparatus for electrically connecting an electrode and an aluminum alloy wire to each other by wire bonding. The apparatus includes a wire feeding device which feeds the wire. The wire has a diameter not less than 500 μm and not greater than 600 μm. The apparatus includes a heating device heats the wire to a temperature that is not lower than 50° C. and not higher than 100° C. The apparatus further includes a pressure device which presses the wire against the electrode. The apparatus further includes an ultrasonic wave generating device which generates an ultrasonic vibration that is applied to the wire that is pressed by the pressure device. | 10-22-2015 |
| 20150301076 | SENSITIVITY INSPECTION SYSTEM AND SENSITIVITY INSPECTION METHOD - A sensitivity inspection system for inspecting the sensitivity of an electrostatic capacitance sensor, including an output acquisition unit acquiring first and second values that are respectively the first and second outputs of the electrostatic capacitance sensor that is in an inspection state and is made inclined, a first conversion unit obtaining a first ratio of a theoretical value of the first output when first reference acceleration is applied to a theoretical value of the first output when acceleration in the first direction is applied in the inspection state, and multiplying the acquired first value by the first ratio, and a second conversion unit obtaining a second ratio of a theoretical value of the second output when second reference acceleration is applied to a theoretical value of the second output when acceleration in the second direction is applied in the inspection state, and multiplying the acquired second value by the second ratio. | 10-22-2015 |
| 20150288354 | SEMICONDUCTOR DEVICE FOR SENSING PHYSICAL QUANTITY - A semiconductor device | 10-08-2015 |
| 20150287777 | WIDE BANDGAP INSULATED GATE SEMICONDUCTOR DEVICE - A wide bandgap insulated gate semiconductor device includes a semiconductor substrate made of semiconductor having a bandgap wider than silicon; n | 10-08-2015 |
| 20150287601 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device manufacturing method for a semiconductor device having a p-n junction formed of a first conductivity type first semiconductor region and a second conductivity type second semiconductor region, and comprising a low-lifetime region that has a carrier lifetime shorter than that in other regions at the interface of the p-n junction. The method includes an implantation process of, after implanting a second conductivity type impurity into the surface of the first semiconductor region with a first acceleration energy, implanting a second conductivity type impurity, with a second acceleration energy differing from the first acceleration energy, into the surface of the first semiconductor region into which the second conductivity type impurity has been implanted. | 10-08-2015 |
| 20150287439 | SEMICONDUCTOR INTEGRATED CIRCUIT - A semiconductor integrated circuit that exhibits an enhanced surge withstand voltage of a nonvolatile memory and has a reduced chip area, having a nonvolatile memory and a Zener diode connected in parallel between a write terminal and a ground terminal. The nonvolatile memory is connected to the write terminal by a write terminal line and to a common connection point by a first ground line. The cathode of the Zener diode is connected to the write terminal line. The anode of the Zener diode is connected to the specified connection point by a second ground line. The first ground line and the second ground line are connected to the specified connection point. | 10-08-2015 |
| 20150287200 | SAFETY CONTROL DEVICE AND SAFETY CONTROL SYSTEM - A safety control device causes an appropriate safety function to operate based on the positional relationship between an operator and a hazard source, the positions of which vary from moment to moment. A hazard source detection section and an operator detection section detect an image of the hazard source and an image of the operator, respectively, from an image of a monitoring area taken by an imaging instrument. A shortest distance search section searches for a shortest distance between the image of the hazard source and the image of the operator. A safety function allocation section selects a safety function based on the shortest distance found by the shortest distance search section. A safety signal generation section transmits a safety signal, which indicates the selected safety function, to an external safety-related instrument using an external communication unit. | 10-08-2015 |
| 20150279754 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE CASING - A semiconductor device has an insulating substrate, a semiconductor element which is mounted on the insulating substrate, a hollow casing which surrounds a peripheral edge of the insulating substrate to contain the semiconductor element therein, and a sealing material which is charged into the casing to seal the inside of the casing. The casing has protrusion portions each of which partially protrudes from an upper surface of the casing. Thus, it is possible to provide a semiconductor device in which poor external appearance or lowering of adhesion to a cover can be prevented even when a sealing material is injected up to the vicinity of an upper surface of a casing. | 10-01-2015 |
| 20150279753 | POWER SEMICONDUCTOR MODULE - A power semiconductor module is equipped with: a metal base; semiconductor chips electrically connected with and fixed to the metal base; and an insulating substrate fixed to the metal base and having a circuit plate on one surface. Additionally, the power semiconductor module is further equipped with a circuit board that is provided so as to face the semiconductor chips and the insulating substrate and that electrically connects electrodes of the semiconductor chips and the circuit plate of the insulating substrate. Further, the power semiconductor module is equipped with a conductive post that is electrically connected to at least one of either the electrodes of the semiconductor chips or the circuit plate of the insulating substrate while being electrically connected to the metal film of the circuit board. | 10-01-2015 |
| 20150279752 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE - A resin casing is insert-molded while clamp protrusions of clamp portions formed in bonding portions of lead terminals are put between an upper mold and a lower mold. An insulating substrate which has a wiring pattern mounted with semiconductor elements is fitted into an opening portion of the resin casing and adhesively bonded to the resin casing. Electric connection between the semiconductor elements and the bonding portions of the lead terminals and between the wiring pattern on the insulating substrate and the bonding portions of the lead terminals is made by bonding wires. Thus, it is possible to provide a method for manufacturing a semiconductor device and the semiconductor device, in which stress applied to lead terminals of a lead frame formed by insert molding can be suppressed, and wire bonding properties and reliability can be improved even when the thickness of each of the lead terminals is reduced. | 10-01-2015 |
| 20150270387 | TRENCH MOS SEMICONDUCTOR DEVICE - To prevent a malfunction of an overcurrent protection circuit without increasing an on-voltage, and to suppress a short circuit capacity, thus further reducing a switching loss, a trench gate IGBT is provided in which is incorporated a sense IGBT connected in parallel to a main IGBT, where only the sense IGBT portion includes a p-type channel region all over in a semiconductor substrate between adjacent parallel striped trenches, so that the capacitance of the MOS gate of the sense IGBT is smaller than the capacitance of the MOS gate of the main IGBT. | 09-24-2015 |
| 20150263719 | INSULATED-GATE TYPE DEVICE DRIVING CIRCUIT - An insulated-gate type device driving circuit for driving an insulated-gate semiconductor element based on a gate signal inputted from the outside includes a gate voltage control semiconductor element which is connected between a gate and a source of the insulated-gate semiconductor element, and a pull-up element which is constituted by a depletion type MOSFET connected between a gate and a drain of the gate voltage control semiconductor element. The gate voltage control semiconductor element is driven by a voltage applied to the gate of the insulated-gate semiconductor element, and a back gate of the MOSFET constituting the pull-up element is grounded to prevent a parasitic transistor from being formed. | 09-17-2015 |
| 20150263611 | SEMICONDUCTOR DEVICE - A semiconductor device that compensates for imbalance between a plurality of semiconductor elements connected in parallel by negative feedback to achieve current balance utilizing reversed temperature characteristics without providing any dedicated element just for cancelling temperature characteristics. A gate driving circuit turns ON a power semiconductor element by applying a voltage elevated by a charge pump (CP) circuit to a gate through a resistor connected between the CP circuit and the gate. The power semiconductor element is turned OFF by control circuit that gives a control signal to turn ON a MOS switch in the gate driving circuit and discharges the gate through a diode. | 09-17-2015 |
| 20150263491 | SEMICONDUCTOR DEVICE - A semiconductor device includes a power semiconductor element, a gate pull-down circuit which is connected to a gate terminal of the power semiconductor element, and a gate resistor which is connected between an input terminal of the semiconductor device and the gate terminal of the power semiconductor element. The gate pull-down circuit has a constant current circuit by which electric charges can be extracted from a gate capacitance of the power semiconductor element when a signal inputted to the input terminal has a low level. As a result, the semiconductor device has an improved switching speed and an improved noise resistance. | 09-17-2015 |
| 20150260760 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE - Current detection circuit of a semiconductor device provided with a shunt resistor, a voltage division ratio adjustment resistor and a selection circuit which selects a voltage division ratio of the latter and has enhancement type MOSFETs and Zener Zaps as trimming elements. One of the Zener Zaps is trimmed and a divided voltage of the voltage division ratio adjustment resistor connected in parallel with the shunt resistor is outputted. The detected voltage in which variation of the resistance of the shunt resistor has been cancelled is therefore outputted. As the shunt resistor and the voltage division ratio adjustment resistor are laminated together, it is possible to obtain a current detection circuit with a small area, which can detect a current flowing into a shunt resistor with high accuracy. | 09-17-2015 |
| 20150260629 | PARTICLE BEAM FORMING DEVICE - A particle beam forming device for forming either a linear or conical particle beam from a particle source in which particles are dispersed in a gas, includes: a reduced-pressure vessel in which pressure is reduced; a particle beam generating unit, which has one end arranged outside of the reduced-pressure vessel and an other end arranged inside the reduced-pressure vessel, and which captures the particle source from outside the reduced-pressure vessel and introduces the particle beam into the reduced-pressure vessel; and a particle beam evaluating unit for evaluating a spatial distribution of the particle beam inside the reduced-pressure vessel. | 09-17-2015 |
| 20150258637 | SOLDER ALLOY FOR DIE BONDING - An object of the invention is to provide a lead-free solder for die bonding having a high heat resistance temperature and an improved wetting property. Provided are a solder alloy for die bonding which contains 0.05% by mass to 3.0% by mass of antimony and the remainder consisting of bismuth and inevitable impurities, and a solder alloy for die bonding which contains 0.01% by mass to 2.0% by mass of germanium and the remainder consisting of bismuth and inevitable impurities. | 09-17-2015 |
| 20150255444 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, AND POSITIONING JIG - A semiconductor device has a plurality of small-sized semiconductor chips disposed between an insulated circuit board having a conductive pattern and a terminal. The semiconductor device exhibits a high accuracy in positioning the semiconductor chips. The semiconductor device includes an insulated circuit board having a conductive pattern, a first semiconductor chip with a rectangular shape connected to the conductive pattern through a first joining material, a second semiconductor chip with a rectangular shape, disposed on the conductive pattern separated from the first semiconductor chip and connected to the conductive pattern through a second joining material, and a terminal disposed above the first semiconductor chip and the second semiconductor chip, connected to the first semiconductor chip through a third joining material, and connected to the second semiconductor chip through a fourth joining material. The terminal has a through-hole above a place between the first semiconductor chip and the second semiconductor chip. | 09-10-2015 |
| 20150245537 | MAGNETIC COMPONENT COOLING STRUCTURE AND POWER CONVERTER HAVING THE SAME - Provided is a cool air flow space in which cool air, that is generated by an inner fan disposed inside a housing, flows in the housing. An attachment member mounts a magnetic component on a bottom portion of the housing at a position within the cool air flow space. The attachment member includes a top plate and a pair of legs that extends downward from the top plate and that is fixed to the bottom portion. | 08-27-2015 |
| 20150244265 | STARTUP CIRCUIT AND POWER SUPPLY CIRCUIT - In a startup circuit, an error amplifier receives a target voltage in a startup period that is a terminal voltage with a shape of a slope generated by charging a capacitor for soft starting with a current from a constant current circuit. A detecting circuit monitors variation of the terminal voltage and blocks pulse from a logic circuit until the terminal voltage, which has been zero volts at the moment of startup, reaches a predetermined threshold value. In this period, the detecting circuit disables the function of the error amplifier. It is not until the terminal voltage VCS reaches the predetermined threshold value and the PWM pulse begins to be delivered that the error amplifier is enabled. At this moment, startup control begins based on the difference between the terminal voltage and the feedback signal. Therefore, the output voltage never rises abruptly. | 08-27-2015 |
| 20150236013 | HIGH VOLTAGE INTEGRATED CIRCUIT DEVICE - A high voltage integrated circuit device suppresses the quantity of holes that are implanted due to a negative voltage surge, thus preventing malfunction and destruction of a high side circuit. A p | 08-20-2015 |
| 20150223339 | SEMICONDUCTOR DEVICE - A semiconductor device, while being small, makes it possible to achieve low inductance responding to high speed switching. The semiconductor device includes a plurality of conductive pattern members, on each of which is mounted one or a plurality of power semiconductor chips, and a printed circuit board wherein a chip rod-form conductive connection member connected to the power semiconductor chip and a pattern rod-form conductive connection member connected to the conductive pattern member are disposed on the surface opposing the conductive pattern member. The conductive pattern member is formed of a narrow portion and a wide portion, the narrow portion of at least one conductive pattern member and the printed circuit board are connected by the pattern rod-form conductive connection member, and a current path is formed between the conductive pattern member and the power semiconductor chip connected via the chip rod-form conductive connection member to the printed circuit board. | 08-06-2015 |
| 20150221725 | SEMICONDUCTOR MULTI-LAYER SUBSTRATE AND SEMICONDUCTOR ELEMENT - A semiconductor multi-layer substrate includes a substrate, a buffer layer formed on the substrate and made of a nitride semiconductor, an electric-field control layer formed on the buffer layer and made of a nitride semiconductor, the electric-field control layer having conductivity in the substrate's lateral direction, an electric-field relaxation layer formed on the electric-field control layer and made of a nitride semiconductor, and an active layer formed on the electric-field relaxation layer and made of an nitride semiconductor. A resistance in the substrate's lateral direction of the electric-field control layer is equal to or smaller than 10 times a resistance of the electric-field relaxation layer, and a ratio of an electric field share between the electric-field relaxation layer and the buffer layer is controlled by a ratio between a thickness of the electric-field relaxation layer and a thickness of the buffer layer. | 08-06-2015 |
| 20150216090 | COOLING DEVICE AND POWER CONVERTER HAVING COOLING DEVICE - A cooling device includes a plurality of side wall fins formed on an outer surface of a first side wall of a housing, and a plurality of bottom fins formed on a bottom surface of a bottom portion of the housing. A cover member covers the side wall fins and bottom fins from an outer side to form side wall and bottom cooling channels. A chamber is provided that forms a fluid introduction chamber in a direction facing a second side wall so as to communicate with the side wall cooling channel and the bottom cooling channel. A coolant supply device is externally attached to the chamber so as to supply a coolant to the fluid introduction chamber. The side wall fins and the bottom fins are formed in predetermined shapes to adjust an amount of the coolant in the side wall cooling channel and the bottom cooling channel. | 07-30-2015 |
| 20150216089 | COOLING STRUCTURE AND HEAT GENERATING BODY - A first heat generating body, a cooling body, which is joined to one surface of the first heat generating body, second heat generating bodies, and heat transfer plates, which transfer the heat of the second heat generating bodies to the cooling body, are provided, wherein the first heat generating body is surface-to-surface joined to the cooling body by a first junction surface, and the heat transfer plates are surface-to-surface joined to the cooling body by a second junction surface which does not overlap the first junction surface. | 07-30-2015 |
| 20150216077 | ELECTRONIC EQUIPMENT COOLING DEVICE AND POWER CONVERTER HAVING ELECTRONIC EQUIPMENT COOLING DEVICE - An electronic equipment cooling device is provided, which has housing in which heat-generating components are housed, and which can cool surfaces of the housing. A blower fan blows air toward the surfaces via a chamber room. An inclined flat plate-like partition portion is provided inside the chamber room so as to distribute a desired amount of air corresponding to a heat generating ratio of the respective surfaces. | 07-30-2015 |
| 20150214876 | POWER CONVERSION DEVICE AND METHOD OF CONTROLLING THE SAME - A power conversion device includes an inverter which can convert between DC and AC power by turning on and off bridge-connected semiconductor switching elements with free wheel diodes connected in reverse parallel; and a rotating electric machine, such as an AC generator or motor, which is connected to the AC terminals of the inverter, where when the DC voltage of the inverter is below a specified value when starting the machine, the speed of the machine is detected in a condition where the DC voltage of the inverter is boosted to at least a specified value of the induced voltage of the machine, by intermittently turning on and off at least one of the switching elements, so as to accurately detect the speed of the machine and stably start it even when the DC voltage of the inverter is lower than the induced voltage of the machine. | 07-30-2015 |
| 20150214845 | CONTROL DEVICE FOR SWITCHING POWER SOURCE - A control device of an insulation type DC/DC converter includes a shunt regulator that detects an error in output voltage at the secondary side of a transformer, a photocoupler that transmits the detected error voltage to the primary side of the transformer, and a DPWM control unit on the primary side that generates a control pulse signal having a pulse width at a duty ratio based on the error voltage. The DPWM control unit includes an A/D conversion circuit, an A/D output stabilization circuit, a dither circuit, and a DPWM circuit. The A/D output stabilization circuit is provided after the A/D conversion circuit, and the output end of the A/D output stabilization circuit is connected to the input end of the dither circuit. | 07-30-2015 |
| 20150214053 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A first nickel film is deposited inside a contact hole of an interlayer dielectric formed on an n | 07-30-2015 |
| 20150214049 | SILICON CARBIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD - Provided is a method of manufacturing a silicon carbide semiconductor device with a long carrier lifetime without carrying out an additional step after a SiC single crystal substrate is fabricated using a chemical vapor deposition method. The silicon carbide semiconductor device manufacturing method includes (a) growing a silicon carbide single crystal film at a first temperature on a silicon carbide semiconductor substrate using chemical vapor deposition; (b) cooling the silicon carbide semiconductor substrate from the first temperature to a second temperature, which is lower than the first temperature, in an atmosphere of a carbon-containing gas after growing the silicon carbide crystal film; and (c) subsequently cooling the silicon carbide semiconductor substrate to a third temperature, which is lower than the second temperature, in a hydrogen gas atmosphere. | 07-30-2015 |
| 20150213825 | MAGNETIC RECORDING MEDIUM FOR HEAT-ASSISTED RECORDING SYSTEM AND METHOD FOR MANUFACTURING SAME - The magnetic recording medium for a heat-assisted recording system has a magnetic recording layer on a non-magnetic substrate and a protective layer on top of the magnetic recording layer. The protective layer includes a first lower protective layer on top of the magnetic recording layer, a first upper protective layer on the first lower protective layer, and a second protective layer on the first upper protective layer. The first lower protective layer is composed mainly of an element selected from the group consisting of Si, Al and Cu, and the first upper protective layer is a layer configured by an oxide of the material of the first lower protective layer. | 07-30-2015 |
| 20150213823 | MAGNETIC RECORDING MEDIUM - A perpendicular magnetic recording medium includes a non-magnetic substrate; an underlayer including first and second underlayers; and a magnetic recording layer including a layer having a granular structure including grains of a magnetic crystal and grain boundary portions, wherein the first underlayer has a NaCl structure with a (001) orientation and contains a nitride or an oxide of at least one element. The first underlayer may contain a nitride of at least one of Cr, V, Ti, Sc, Mo, Nb, Zr, Y, Al, and B, and the second underlayer may include a plurality of island-shaped regions and contain at least one of Mg, Ca, Co, and Ni. The first underlayer may contains an oxide of at least one of Mg, Ca, Co, and Ni, and the second underlayer may include net-shaped regions and contain at least one of Cr, V, Ti, Sc, Mo, Nb, Zr, Y, Al, B, and C. | 07-30-2015 |
| 20150213821 | PERPENDICULAR MAGNETIC RECORDING MEDIUM - A perpendicular magnetic recording medium includes a non-magnetic substrate; and a magnetic recording layer that includes magnetic crystal grains and a non-magnetic crystal grain boundary that surrounds the magnetic crystal grains, wherein the magnetic crystal grains contain an ordered alloy and the non-magnetic crystal grain boundary contains Ge oxides. The magnetic recording layer may have a granular structure. The magnetic crystal grains may be micronized to be sufficiently ordered and separated, and the perpendicular magnetic recording medium may have a high magnetic anisotropy constant Ku and high coercivity Hc. | 07-30-2015 |
| 20150212269 | OPTICAL MULTIPLEXING DEVICE - A plurality of second optical fibers are disposed around a first optical fiber. One ends of the second optical fibers are directed in the same direction as one end of the first optical fiber. A reflection surface faces the one end and the one ends and forms a parabolic surface. In addition, the one end is located on an extension line of an axis of the parabolic surface of the reflection surface, that is, on an extension line of an axis of a parabolic line serving as a base of the parabolic surface. | 07-30-2015 |
| 20150212187 | ELECTROSTATIC CAPACITANCE SENSOR AND METHOD FOR CORRECTING NON-LINEAR OUTPUT - An electrostatic capacitance sensor, including a movable electrode, a support, a beam member movably attaching the movable electrode to the support, a first fixed electrode facing the movable electrode from a first direction, a second fixed electrode facing the movable electrode from a second direction different from the first direction, a detection unit that detects a change of first capacitance charged between the movable electrode and the first fixed electrode, and a change of second capacitance charged between the movable electrode and the second fixed electrode, a hardware computing device, and a storage medium having program instructions store thereon. The execution of the program instructions by the hardware computing device causes the electrostatic capacitance sensor to provide the function of a correction unit that corrects a detection result of the detection unit, and generates an acceleration signal to indicate acceleration using the corrected detection result. | 07-30-2015 |
| 20150211938 | SEMICONDUCTOR CHIP TEMPERATURE ESTIMATION DEVICE AND OVERHEAT PROTECTION DEVICE - A semiconductor chip temperature estimation device that estimates the temperature of a semiconductor chip incorporated together with a thermistor in a semiconductor module includes a first estimation unit which calculates a first estimation value of a chip loss of the chip, a memory which stores in advance a correlation between a temperature rise of the temperature sensor and the chip loss of the chip, a second estimation unit which calculates a second estimation value of the temperature rise of the temperature sensor, and a third estimation unit which calculates a third estimation value of the temperature of the cooling element. The temperature of the semiconductor chip is estimated by using the third estimation value as a base temperature. | 07-30-2015 |
| 20150209723 | EXHAUST GAS TREATMENT APPARATUS, SHIP, AND EXHAUST GAS TREATMENT METHOD - An exhaust gas treatment apparatus and method that absorbs gas by bringing the gas and a liquid into contact with each other has a plurality of scrubbers that each include an absorption tower main unit in which an internal space is formed. A spray apparatus sprays liquid in a predetermined vertical region of the internal space, and a gas supply apparatus introduces the gas into the absorption tower main unit. A number of first passages branch from a pipe supplying the liquid to the exhaust gas treatment apparatus and are connected to the spray apparatuses of the scrubbers. A number of second passages branch from a pipe supplying the gas to the exhaust gas treatment apparatus and are connected to the gas supply apparatuses of the scrubbers. | 07-30-2015 |
| 20150209720 | AMOUNT OF SEAWATER CONTROL DEVICE FOR SCRUBBER, AMOUNT OF SEAWATER CONTROL METHOD FOR SCRUBBER, AND AMOUNT OF ALKALI CONTROL DEVICE AND AMOUNT OF ALKALI CONTROL METHOD - An amount of seawater control device controls an amount of seawater supplied to a scrubber that purifies sulfur oxide contained in exhaust gas by bringing the sulfur oxide into contact with seawater. The control device includes a minimum amount of seawater converter which calculates a minimum amount of seawater necessary for an absorption reaction of the sulfur oxide by the seawater, an amount of seawater correction converter which calculates a corrected amount of seawater which is an amount of seawater at which the sulfur oxide contained in the exhaust gas discharged into atmosphere from the scrubber is equal to or less than a set variable, a summing element which calculates a set amount of seawater by summing the minimum amount of seawater and the corrected amount of seawater, and a pump control device which implements control such that seawater corresponding to the set amount is supplied to the scrubber. | 07-30-2015 |
| 20150200309 | JUNCTION FIELD EFFECT TRANSISTOR - In a high voltage JFET, a p-floating region is provided in the surface layer of an n-drift region, thereby increasing the resistance R of the n-drift region and minimizing the voltage divided at a pn junction. This makes it possible to improve ESD capacity without increasing device size and without making the cutoff current smaller. | 07-16-2015 |
| 20150194908 | INVERTER DEVICE - When in an operation mode in which an alternating current voltage Vout is output using a positive voltage V | 07-09-2015 |
| 20150194313 | FABRICATION METHOD OF SILICON CARBIDE SEMICONDUCTOR APPARATUS - An ohmic electrode ( | 07-09-2015 |
| 20150188410 | POWER CONVERSION DEVICE - A power conversion device, including first and second semiconductor switching elements, first and second free wheeling diodes respectively connected in reverse parallel to the first and second semiconductor switching elements, and first and second drive circuits configured to respectively on/off drive the first and second semiconductor switching elements. The first and second semiconductor switching elements are connected in series to form a half bridge circuit and are respectively disposed on upper and lower arms of the half bridge circuit. The second drive circuit includes an alarm signal generation circuit configured to generate different alarm signals upon detecting overcurrent in different arms of the half bridge circuit. | 07-02-2015 |
| 20150187870 | SEMICONDUCTOR DEVICE - In a semiconductor device, an edge termination region which surrounds an active region includes an electric field reduction mechanism including guard rings, first field plates which come into contact with the guard rings, and second field plates which are provided on the first field plates, with an interlayer insulating film interposed therebetween. The second field plate is thicker than the first field plate. A gap between the second field plates is greater than a gap between the first field plates. A barrier metal film is provided between the second field plate and the interlayer insulating film so as come into conductive contact with the second field plate. A gap between the barrier metal films is equal to the gap between the first field plates. | 07-02-2015 |
| 20150180368 | POWER CONVERTER, AND INVERTER DEVICE INCLUDING THE POWER CONVERTER - In a power converter, in a period in which the polarities of output voltage and output current of a power converter differ, a pulse train voltage corresponding to a PWM signal is output by a first switching element and a second switching element being turned off, one element of a first switch element and a second switch element being turned on, and the other element being turned on and off based on an inverted signal of a PWM signal pulse width modulated in accordance with an output voltage command. | 06-25-2015 |
| 20150180233 | UNINTERRUPTIBLE POWER SUPPLY APPARATUS - An uninterruptible power supply apparatus includes a power supply unit converting AC power to generate a DC voltage to be supplied to a loading device. The uninterruptible power supply apparatus further includes a first battery unit connected to the power supply unit to receive a DC current therefrom, and stores first DC power generated from the DC voltage. The first battery unit generates a DC voltage to be supplied to the loading device from the first DC power. The uninterruptible power supply apparatus includes a second battery unit connected in parallel to the power supply unit and stores second DC power, and generates, from the second DC power stored in the second battery unit, a DC voltage to be supplied to the loading device. The uninterruptible power supply apparatus further includes a controller for controlling operation of the power supply unit, the first battery unit and the second battery unit. | 06-25-2015 |
| 20150180232 | UNINTERRUPTIBLE POWER SUPPLY SYSTEM - Provided is an uninterruptible power supply system. The uninterruptible power supply system includes a power supply unit including a power supply circuit converting alternating current power into direct current voltage to be supplied to a load apparatus. The uninterruptible power supply system includes a battery unit including a battery circuit. The battery circuit stores direct current power and discharges the direct current power to generate direct current voltage to be supplied to the load apparatus. The uninterruptible power supply system includes a rack in which each of the power supply unit and the battery unit is mounted. | 06-25-2015 |
| 20150179784 | SEMICONDUCTOR DEVICE HAVING SCHOTTKY JUNCTION BETWEEN SUBSTRATE AND DRAIN ELECTRODE - A semiconductor device includes a semiconductor substrate that is made of a semiconductor material with a wider band gap than silicon, a field effect transistor, including a front surface element structure, provided on a front surface of the substrate, and a drain electrode having surface contact with the substrate so as to form a Schottky junction between the semiconductor substrate and the drain electrode. | 06-25-2015 |
| 20150174527 | EXHAUST GAS PROCESSING APPARATUS - There is provided an exhaust gas processing apparatus which improves the removal rate of harmful substances and also achieves a compact size. An exhaust gas processing apparatus ( | 06-25-2015 |
| 20150162850 | POWER CONVERSION DEVICE - In a power conversion device, a constant voltage can be supplied even when the voltage of an alternating current power supply fluctuates. A switching element Q | 06-11-2015 |
| 20150162432 | SEMICONDUCTOR DEVICE | 06-11-2015 |
| 20150156878 | INTELLIGENT MODULE - Provided is an intelligent module including a common section including at least one common printed substrate having mounted thereupon circuit components including a drive circuit, a control calculation circuit, and a communication circuit. The common section includes a switching element module. The at least one common printed substrate and switching element are integrally formed. The intelligent module includes a customized section separated from the common section. The customized section includes a printed customized substrate, and circuit components, including a board power circuit, mounted on the printed customized substrate and in compliance with customer specifications. | 06-04-2015 |
| 20150147233 | EXHAUST GAS PURIFYING APPARATUS - Provided is an exhaust gas purifying apparatus capable of purifying exhaust gas by using water. The exhaust gas purifying apparatus includes an electrolyzed alkaline water generator which includes a cathode and an anode formed of Mg or an Mg alloy, and in which water is electrolyzed through application of voltage across the cathode and anode, to generate electrolyzed alkaline water. The purifying apparatus includes an exhaust gas absorption tower into which exhaust gas is introduced. Spray nozzles spray the electrolyzed alkaline water in the exhaust gas absorption tower. | 05-28-2015 |
| 20150140293 | METAL-BASE PRINTED CIRCUIT BOARD - A highly thermally conductive printed circuit board prevents electrochemical migration by inhibiting elution of copper ions. The printed circuit board is a metal-base printed circuit board including a metal base plate having an insulating resin layer and a copper foil layer stacked thereon in this order. In the printed circuit board, the insulating resin layer contains a first inorganic filler made of inorganic particles having particle diameters of 0.1 nm to 600 nm with an average particle diameter (D | 05-21-2015 |
| 20150137872 | VOLTAGE CONTROLLED SWITCHING ELEMENT GATE DRIVE CIRCUIT - A voltage controlled switching element gate drive circuit makes it possible to suppress an occurrence of a malfunction, while suppressing surge voltage, surge current, and switching noise, when switching in a voltage controlled switching element. A gate drive circuit that supplies a gate voltage to the gate of a voltage controlled switching element, thus driving the voltage controlled switching element, includes a high potential side switching element and low potential side switching element connected in series, first variable resistors interposed between at least the high potential side switching element and a high potential power supply or the low potential side switching element and a low potential power supply, and a control circuit that adjusts the resistance values of the first variable resistors. | 05-21-2015 |
| 20150137852 | LEVEL SHIFT CIRCUIT UTILIZING RESISTANCE IN SEMICONDUCTOR SUBSTRATE - An apparatus such as a level shift circuit includes a first signal output device configured to output a first level shifting signal, a second signal output device configured to output a second level shifting signal, and first and second detector devices. The level shifting signals are to control an output switching element of a high potential side of an output device that includes a power source and a load. The first and second detector devices are respectively configured to compare the first and second level shifting signals to a reference signal and output respective first and second comparison result signals. The first and second comparison result signals are configured to at least partly control switching of the first and second level shifting signals based at least in part on the presence of a parasitic resistance. | 05-21-2015 |
| 20150132608 | PERPENDICULAR MAGNETIC RECORDING MEDIUM - A perpendicular magnetic recording medium includes at least a nonmagnetic substrate and a magnetic recording layer. The magnetic recording layer is constituted by a plurality of layers that includes at least a first magnetic recording layer and a second magnetic recording layer. The first magnetic recording layer has a granular structure that includes first magnetic crystal grains and first nonmagnetic crystal grain boundaries surrounding the first magnetic crystal grains. The first magnetic crystal grains include an ordered alloy, and the first nonmagnetic crystal grain boundaries are constituted by carbon. The second magnetic recording layer has a granular structure that includes second magnetic crystal grains and a second nonmagnetic crystal grain boundaries that surround the second magnetic crystal grains. The second magnetic crystal grains include an ordered alloy, and the second nonmagnetic crystal grain boundaries are constituted by a carbon-containing nonmagnetic material. | 05-14-2015 |
| 20150130042 | SEMICONDUCTOR MODULE WITH RADIATION FINS - A semiconductor module with radiation fins includes a semiconductor module including a metal base. The metal base has an outer circumferential portion surrounding the same and a top panel portion surrounded by the outer circumferential portion. One side of the top panel portion is disposed with a plurality of semiconductor chips through a plurality of corresponding insulating substrates and the other side of the top panel portion is disposed with radiation fins. The plurality of semiconductor chips is connected to electric wiring to electrically connect to the outside of the semiconductor module. A thickness of the top panel portion is less than a thickness of the outer circumferential portion. The top panel portion between the insulating substrates includes a groove having an opening narrower than a bottom portion. The plurality of semiconductor chips is sealed together with the groove by resin. | 05-14-2015 |
| 20150129894 | WIDE BAND GAP SEMICONDUCTOR APPARATUS AND FABRICATION METHOD THEREOF - A silicon carbide epitaxial layer formed by a low concentration wide band gap semiconductor of a first conductivity type is formed on the surface of a silicon carbide substrate formed by a high concentration wide band gap semiconductor of the first conductivity type. A Schottky electrode is formed on the silicon carbide epitaxial layer. The interface between the Schottky electrode and the silicon carbide epitaxial layer is used as a Schottky interface. Plural impurity regions of a second conductivity type are disposed at predetermined intervals in a lateral direction, in the silicon carbide epitaxial layer, at a position in the lower portion of the Schottky electrode in the depth direction. Because of the shape of the impurity regions, any leak current can be suppressed without raising the ON-resistance. | 05-14-2015 |
| 20150126000 | METHOD OF MANUFACTURING A MOS TYPE SEMICONDUCTOR DEVICE - A method of manufacturing a MOS type semiconductor device, includes, before forming a semiconductor functional structure including a necessary MOS gate structure on one principal surface of a silicon semiconductor substrate, in the order recited, a first step of heating the silicon semiconductor substrate in an oxygen-containing atmosphere under heat treatment conditions including a heat treatment temperature of higher than 1,280° C. and a heat treatment time necessary for introducing oxygen up to a solid solution limit concentration in the silicon semiconductor substrate as a whole body; and a second step of holding the silicon semiconductor substrate at a specified temperature in a range from 1,000° C. to 1,200° C. The method achieves small turn-off loss and little variation of ON voltages without controlling a collector layer to a lower concentration than the conventional technology. | 05-07-2015 |
| 20150124498 | POWER CONVERSION DEVICE - A power converter includes a first arm configured by connecting a diode to a switching element, a second arm configured by connecting a diode to another switching element, a third arm formed of a first bidirectional switch configured by connecting switch elements, and a fourth arm formed of a second bidirectional switch configured by connecting other switch elements. An inverter circuit is configured by connecting the first and second arms in series between terminals of a direct current power source circuit, by connecting the third arm between a terminal of an alternating current power source and an output terminal, and by connecting the fourth arm between the output terminal and another output terminal. The control mode of the inverter circuit is switched between control modes at a timing at which at least one common arm continues a conductible condition. | 05-07-2015 |
| 20150123637 | POWER SUPPLY DEVICE - A power supply device includes an output semiconductor element and a clamp circuit. The output semiconductor element is provided between a power supply line and an output terminal. The output semiconductor element is driven and switched so as to supply electric power to an inductive load connected to the output terminal. The clamp circuit clamps a voltage applied between the power supply line and the output terminal due to a counter electromotive force generated in the inductive load when the output semiconductor element turns OFF, with reference to an operation reference voltage of the output semiconductor element. Thus, it is possible to provide a power supply device including a clamp circuit which can effectively clamp a negative voltage surge derived from a counter electromotive force generated in an inductive load, at a low clamp voltage. | 05-07-2015 |
| 20150115428 | POWER SEMICONDUCTOR MODULE - A power semiconductor module available under environments of high temperature has enhanced heat resistance of silicone gel filled up in a case. A power semiconductor module comprises a power semiconductor element, an insulating substrate mounted with the power semiconductor element, a resin case containing the power semiconductor element and the insulating substrate, a silicone gel injected into the resin case, and a sheet composed of a silicone rubber or silicone resin, disposed between the resin case and the silicone gel within the resin case. | 04-30-2015 |
| 20150115287 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE | 04-30-2015 |
| 20150115285 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SEMICONDUCTOR DEVICE | 04-30-2015 |
| 20150111368 | FABRICATION METHOD OF SILICON CARBIDE SEMICONDUCTOR ELEMENT - A (000-1) C-plane of an n | 04-23-2015 |
| 20150111353 | SEMICONDUCTOR DEVICE AND THE METHOD OF MANUFACTURING THE SAME - A semiconductor device according to the invention includes p-type well region | 04-23-2015 |
| 20150109831 | SWITCHING POWER SUPPLY DEVICE - A drive control circuit for a switching power supply device. The drive control circuit includes an output control circuit configured to generate an output control signal with a pulse width corresponding to an output voltage of the switching power supply device, a threshold setting circuit configured to determine a winding threshold voltage according to a direct current input voltage applied to the series resonant circuit formed of the leakage inductance of an isolation transformer and a capacitor of the switching power supply device, a winding detection circuit configured to compare a voltage generated in a tertiary winding of the isolation transformer with the winding threshold voltage and to accordingly output a winding detection signal, and a drive circuit configured to receive the winding detection signal and the output control signal, and to generate a pulse-width controlled drive signal for driving a first switching element of the switching power supply device. | 04-23-2015 |
| 20150108501 | SEMICONDUCTOR DEVICE - In an active region, p | 04-23-2015 |
| 20150102480 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device comprising a cooler in which, by improving the shape of the connecting portions of an inlet/outlet of a coolant or the like, the pressure loss in the connecting portion or the like can be reduced. | 04-16-2015 |
| 20150102363 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - A silicon carbide semiconductor device has a first-conductivity-type semiconductor layer having a lower impurity concentration and formed on a first-conductivity-type semiconductor substrate, a second-conductivity-type semiconductor layer having a higher impurity concentration and selectively formed in the first-conductivity-type semiconductor layer, a second-conductivity-type base layer having a lower impurity concentration formed on a surface of the second-conductivity-type semiconductor layer, a first-conductivity-type source region selectively formed in a surface layer of the base layer, a first-conductivity-type well region formed to penetrate the base layer from a surface to the first-conductivity-type semiconductor layer, and a gate electrode formed via a gate insulation film on a surface of the base layer interposed between the source region and the well region. Portions of the respective second-conductivity-type semiconductor layers of different cells can be connected to each other by a connecting portion in a region under the well region. | 04-16-2015 |
| 20150100151 | REMOTE HANDLING APPARATUS FOR LOAD OBJECT AND AUXILIARY APPARATUS THEREOF - A remote handling apparatus includes a joystick device, a load lifting device and a counterforce controller. The joystick device includes a counterforce generator that generates operation counterforce via a stick that accepts manual operation. The counterforce controller includes a pulsed counterforce controller and/or a deviation counterforce controller. The pulsed counterforce controller calculates a time rate of change of a dynamic load value of the load object, and outputs a counterforce command signal indicating a counterforce command value for generating pulsed counterforce. The deviation counterforce controller calculates a deviation amount of a dynamic load value from a static load value, and outputs a counterforce command signal indicating a counterforce command value for generating a counterforce. Embodiments may be implemented as an auxiliary apparatus, which is attached to an existing remote handling apparatus. | 04-09-2015 |
| 20150097281 | SEMICONDUCTOR DEVICE - A semiconductor device is disclosed. The semiconductor device is a power semiconductor module of a liquid-cooled type, which substantially prevents a cooling liquid from leaking out without providing additional working on a casing and without a providing high precision in a process for forming a sealing member and a groove for fitting the sealing member. The semiconductor device has a groove for fitting a sealing member that is formed not at the casing but at the base plate. The sealing member and the groove have widths that bring the sealing member made of an elastic material into contact with side surfaces of the groove intermittently. | 04-09-2015 |
| 20150096616 | PHOTOVOLTAIC MODULE WITH SNOW MELTING FUNCTION - A photovoltaic module with snow melting function has a photovoltaic cell; a heat transfer plate attached to a non-light receiving surface side of the photovoltaic cell through a sealer layer; a heat-resistant insulating resin sheet inserted between the photovoltaic cell and the heat transfer plate; a surface protection layer attached to a light receiving surface side of the photovoltaic cell through a sealer layer; and an external power supply applying a current to the photovoltaic cell causing the photovoltaic cell to generate heat to a temperature for melting snow. A whole front surface of the photovoltaic cell is flat so as not to protrude from the surface protection layer. The heat-resistant insulating resin sheet is attached to the non-light receiving surface side of the photovoltaic cell through the sealer layer, and the heat transfer plate is attached to a back surface side of the heat-resistant insulating resin sheet. | 04-09-2015 |
| 20150092819 | SENSOR SIGNAL OUTPUT CIRCUIT AND METHOD FOR ADJUSTING IT - A sensor signal output circuit includes: a buffer amplifier which amplifies an output of a temperature sensor; an operational amplifier which amplifies an output of the buffer amplifier; an oscillator which generates a triangular wave signal; and a comparator which compares the triangular wave signal with an output of the operational amplifier to generate a PWM signal. After an offset adjusting resistor of the operational amplifier is adjusted at first temperature, the amplitude of the triangular wave signal is set to adjust the pulse width of the PWM signal at the first temperature. After that, a gain adjusting resistor of the operational amplifier is set to adjust the pulse width of the PWM signal at a second temperature. | 04-02-2015 |
| 20150084533 | IGNITER, IGNITER CONTROL METHOD, AND INTERNAL COMBUSTION ENGINE IGNITION APPARATUS - An igniter is not provided with a depression IGBT and is configured such that a distance between a main IGBT and a sense IGBT is equal to or greater than 100 μm and equal to or less than 700 μm and preferably equal to or greater than 100 μm and equal to or less than 200 μm. The igniter is controlled such that, before the overcurrent of the main IGBT reaches a predetermined upper limit, a sense current of the sense IGBT is saturated. Therefore, it is possible to provide the igniter which has a small size and prevents the overshoot of a collector current of the main IGBT when a current is limited and an internal combustion engine ignition apparatus which includes the igniter, has a small size, and prevents an ignition error. | 03-26-2015 |
| 20150079510 | ELECTROPHOTOGRAPHIC PHOTORECEPTOR, PRODUCTION METHOD THEREFOR, ELECTROPHOTOGRAPHIC DEVICE, AND PRODUCTION METHOD FOR COPOLYMER POLYARYLATE RESIN - An electrophotographic photoreceptor having a photosensitive layer which includes, as a resin binder, a copolymeric polyarylate resin having structural units of a Chemical Structural Formula 1, a method of producing the photoreceptor, an electrophotographic device including the electrophotographic photoreceptor, and a method of preparing the copolymeric polyarylate resin are provided. The electrophotographic photoreceptor reduces the amount of abrasion at the surface of a photoreceptor drum and lowers frictional resistance from the beginning until the end of printing, and moreover provides good images. | 03-19-2015 |
| 20150076521 | VERTICAL HIGH-VOLTAGE SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - To provide a vertical SIC-MOSFET and IGBT capable of having low ON-resistance without destruction of gate oxide films or degradation of reliability even when a high voltage is applied, and a fabrication method thereof, a vertical mosfet has a semiconductor layer and a base layer joined instead of a well region | 03-19-2015 |
| 20150076520 | SILICON CARBIDE SEMICONDUCTOR ELEMENT AND FABRICATION METHOD THEREOF - In a fabrication method of a silicon carbide semiconductor element including a drift layer playing a role of retaining a high withstand voltage on a front side of a semiconductor substrate of silicon carbide and including an ohmic electrode on a backside, dicing is added to form at least one dicing line in an element active region on a surface of the semiconductor substrate on a side opposite of the drift layer before forming the ohmic electrode on the backside of the semiconductor substrate. Thus, a silicon carbide semiconductor element and fabrication method thereof is provided such that even if the semiconductor substrate is made thinner to reduce the on-resistance, the strength of the substrate can be maintained and cracking of the wafer during wafer processing can be reduced. | 03-19-2015 |
| 20150076519 | VERTICAL HIGH VOLTAGE SEMICONDUCTOR APPARATUS AND FABRICATION METHOD OF VERTICAL HIGH VOLTAGE SEMICONDUCTOR APPARATUS - A silicon carbide vertical MOSFET includes an N-counter layer of a first conductivity type formed in a surface layer other than a second semiconductor layer base layer selectively formed in a low concentration layer on a surface of the substrate, a gate electrode layer formed through a gate insulating film in at least a portion of an exposed portion of a surface of a third semiconductor layer of a second conductivity type between a source region of the first conductivity type and the N-counter layer of the first conductivity type, and a source electrode in contact commonly with surfaces of the source region and the third semiconductor layer. Portions of the second conductivity type semiconductor layer are connected with each other in a region beneath the N-counter layer. | 03-19-2015 |
| 20150069601 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor device and a semiconductor device that is manufactured by the method. In the method of manufacturing a semiconductor device, a releasing sheet is disposed in close contact with a hole of an aluminum plate having the recessed hole, and a skeleton structure of a semiconductor device is put into the recessed hole. Then, liquid epoxy resin is poured into the recessed hole. After hardening, the epoxy resin body | 03-12-2015 |
| 20150069462 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - First and second n-type field stop layers in an n | 03-12-2015 |
| 20150069415 | SEMICONDUCTOR DEVICE - An n-type SiC layer is formed on a front face of an n | 03-12-2015 |
