EXCICO FRANCE Patent applications |
Patent application number | Title | Published |
20140080323 | METHOD AND APPARATUS FOR FORMING A STRAIGHT LINE PROJECTION ON A SEMICONDUCTOR SUBSTRATE - An apparatus for irradiating a semiconductor is disclosed. The apparatus has a curved mirror with a reflective surface of revolution, and a point source generating an irradiation beam being incident on the curved mirror along an incident direction. The curved mirror and the point source form a system having an axis of revolution wherein the point source is provided on or near said axis of revolution. The axis of revolution substantially coincides with a straight line projection to be generated on a semiconductor substrate. Additionally, the use of such an apparatus for manufacturing a selective emitter grid, or for irradiating a large area semiconductor surface in a scanning movement, is disclosed. | 03-20-2014 |
20130082195 | METHOD AND APPARATUS FOR IRRADIATING A SEMICONDUCTOR MATERIAL SURFACE BY LASER ENERGY - An apparatus for irradiating semiconductor material is disclosed having, a laser generating a primary laser beam, an optical system and a means for shaping the primary laser beam, comprising a plurality of apertures for shaping the primary laser beam into a plurality of secondary laser beams. Wherein the shape and/or size of the individual apertures corresponds to that of a common region of a semiconductor material layer to be irradiated. The optical system is adapted for superposing the secondary laser beams to irradiate said common region. Further, the use of such an apparatus in semiconductor device manufacturing is disclosed. | 04-04-2013 |
20130045609 | METHOD FOR MAKING A SEMICONDUCTOR DEVICE BY LASER IRRADIATION - A method for making a semiconductor device including the steps of exposing a semiconductor substrate to a process step or sequence of process steps of which at least one process performance parameter is determined in a region of the semiconductor substrate, and irradiating the region with a laser having laser irradiation parameters; wherein the irradiation parameters are determined based on the at least one process performance parameter. | 02-21-2013 |
20120171876 | METHOD AND APPARATUS FOR IRRADIATING A SEMICONDUCTOR MATERIAL SURFACE BY LASER ENERGY - A method for irradiating semiconductor material is provided which includes selecting a region of a semiconductor layer surface, irradiating the region with an excimer laser which has a beam spot size, and adjusting the beam spot size to match the selected region size. Further, an apparatus for irradiating semiconductor material is provided. The apparatus includes an excimer laser for irradiating a selected region of a semiconductor layer surface, the laser has a laser beam spot size, and a system for adjusting the laser beam spot size to match the selected region size. | 07-05-2012 |
20120037603 | METHOD AND APPARATUS FOR IRRADIATING A SEMICONDUCTOR MATERIAL SURFACE BY LASER ENERGY - A method for irradiating semiconductor material including irradiating a region of a semiconductor material layer surface with a first laser having laser irradiation parameters to melt at least a part of the region and controlling the irradiation process by adapting the irradiation parameters by determining the depth of the melted region part. An apparatus for irradiating semiconductor material is disclosed which has a first laser for irradiating a region of a semiconductor layer surface to melt at least a part of the region. The laser having laser irradiation parameters and a controller for controlling the irradiation process by adapting the laser irradiation parameters by determining the depth of the melted region part. | 02-16-2012 |