ECI Technology, Inc. Patent applications |
Patent application number | Title | Published |
20140206090 | ETCHANT PRODUCT ANALYSIS IN ALKALINE ETCHANT SOLUTIONS - Silicon ions in an alkaline etchant solution are analyzed by acidifying a sample of the etchant solution, adding fluoride ions in excess of the concentration required to react with all of the silicon ions, and using a fluoride ion specific electrode (FISE) to detect free fluoride ions in the resulting test solution. Good sensitivity and precision are provided by using a relatively acidic test solution and only a slight excess of fluoride ions, and limiting the analysis range to the maximum expected silicon concentration in the etchant solution. | 07-24-2014 |
20140061064 | PALLADIUM COATING THICKNESS MEASUREMENT - The thickness of a palladium coating on copper (or another substrate) is measured by passing a cathodic current through a predetermined area of the coating in contact with an electrolytic solution and measuring the potential as a function of time. Protons from the electrolytic solution are electrochemically reduced to palladium hydride at cathodic potentials less negative than required for evolution of hydrogen. As formation of the PdH | 03-06-2014 |
20110272289 | Boric acid replenishment in electroplating baths - Boric acid is replenished in an electroplating bath via a replenishment solution comprising boric acid dissolved in pure water, in which the solubility at room temperature is comparable to that in the plating bath at operating temperature. The replenishment solution may be used to replace all or part of the water lost by evaporation. An automated device may be used to replenish boric acid in the electroplating bath. | 11-10-2011 |
20110266154 | Analysis of an auxiliary leveler additive in an acid copper plating bath - An auxiliary leveler additive that cannot be analyzed by conventional CVS methods for acid copper plating baths is analyzed by cyclic voltammetry at a platinum rotating disk electrode from its effect on the anodic current at very positive potentials. | 11-03-2011 |