DOWA ELECTRONICS MATERIALS CO., LTD. Patent applications |
Patent application number | Title | Published |
20160136763 | BONDING MATERIAL AND BONDING METHOD USING SAME - A bonding material of a silver paste includes: fine silver particles having an average primary particle diameter of 1 to 50 nanometers, each of the fine silver particles being coated with an organic compound having a carbon number of not greater than 8, such as hexanoic acid; silver particles having an average primary particle diameter of 0.5 to 4 micrometers, each of the silver particles being coated with an organic compound, such as oleic acid; a solvent containing 3 to 7% by weight of an alcohol and 0.3 to 1% by weight of a triol; a dispersant containing 0.5 to 2% by weight of an acid dispersant and 0.01 to 0.1% by weight of phosphate ester dispersant; and 0.01 to 0.1% by weight of a sintering aid, such as diglycolic acid, wherein the content of the fine silver particles is in the range of from 5% by weight to 30% by weight, and the content of the silver particles is in the range of from 60% by weight to 90% by weight, the content of the total of the fine silver particles and the silver particles being not less than 90% by weight. | 05-19-2016 |
20160099087 | BONDING MATERIAL AND BONDING METHOD USING THE SAME - A bonded product is obtained by applying a silver paste containing silver nanoparticles having an average primary particle diameter of 1 to 200 nm, and performing firing. A diameter of a crystallite of the bonded product on a (111) plane of Ag when heated at 250° C. for 10 minutes in an inert atmosphere is 65 nm or larger. | 04-07-2016 |
20160001371 | MAGNETIC COMPONENT, AND SOFT MAGNETIC METAL POWDER USED THEREIN AND MANUFACTURING METHOD THEREOF - A soft magnetic metal powder is manufactured. An aqueous solution of at least one of aluminum, silicon, a rare-earth element (including Y), and magnesium is added into a solution containing an iron ion while blowing a gas containing oxygen thereinto, to form a precursor containing at least one of aluminum, silicon, a rare-earth element (including Y), and magnesium. The precursor is reduced to obtain a metal powder. The metal powder is further slowly oxidized with oxygen to form an oxidized film on the surface of the metal powder. | 01-07-2016 |
20150372189 | III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - To provide a III nitride semiconductor light emitting device in which the formation of cracks in an active layer is suppressed and the light output power is improved, a III nitride semiconductor light emitting device has an n-type cladding layer, an active layer, and a p-type cladding layer in order. The active layer has a multiple quantum-well structure in which barrier layers made of Al | 12-24-2015 |
20150364814 | SILVER CONDUCTIVE FILM AND METHOD FOR PRODUCING SAME - There is provided a silver conductive film capable of inexpensively mass-producing conductive circuits, such as antennas for IC tags, which have excellent electrical characteristic and flexibility, by applying a silver particle dispersing solution, which contains 50-70% by weight of silver particles having a mean particle diameter of 20 nm or less, on a substrate by the flexographic printing, and then, calcining the silver particle dispersing solution to produce a silver conductive film, which contains 10-50% by volume of a sintered body of the silver particles and which has a volume resistivity of 3-100 μΩ·cm, a surface resistivity of 0.5Ω/□ or less and a thickness of 1-6 μm. | 12-17-2015 |
20150295129 | LUMINESCENT DEVICE AND MANUFACTURING METHOD FOR LUMINESCENT DEVICE AND SEMICONDUCTOR DEVICE - A luminescent device and a manufacturing method for the luminescent device and a semiconductor device which are free from occurrence of cracks in a compound semiconductor layer due to the internal stress in the compound semiconductor layer at the time of chemical lift-off. The luminescent device manufacturing method includes forming a device region on part of an epitaxial substrate through a lift-off layer; forming a sacrificing portion, being not removed in a chemical lift-off step, around device region on epitaxial substrate; covering epitaxial substrate and semiconductor layer and forming a covering layer such that level of surface thereof in the region away from device region is lower than luminescent layer surface; removing covering layer on semiconductor layer, and that on sacrificing portion surface; forming a reflection layer on covering layer surface and semiconductor layer surface; and forming a supporting substrate by providing plating on reflection layer. | 10-15-2015 |
20150266097 | METHOD FOR PRODUCING FINE SILVER PARTICLES - An aliphatic amine having a carbon number of not less than 6, such as octylamine, hexylamine or oleylamine, serving as an organic protective material is added to water serving as a solvent so that the molar ratio of the aliphatic amine with respect to silver of a silver compound is in the range of 0.05 to 6, a reducing agent, such as hydrazine or NaBH | 09-24-2015 |
20150243400 | FINE SILVER PARTICLE POWDER, METHOD FOR MANUFACTURING THE SAME, SILVER PASTE USING THE POWDER AND METHOD OF USE OF THE PASTE - A method suitable for mass production of nanoparticles with a uniform particle diameter is provided. It is an object to provide a powder of the nanoparticle obtained by this method, a dispersion containing the nanoparticles, and a paste containing the nanoparticles. There is provided a method for manufacturing silver particles including the step of reducing silver in a silver solution containing a protective agent composed of an organic material and a copper component in an amount of 1 to 1,000 ppm relative to the amount of silver to obtain particles having an average particle diameter (D | 08-27-2015 |
20150220014 | METHOD FOR MANUFACTURING CARRIER CORE PARTICLES FOR ELECTROPHOTOGRAPHIC DEVELOPER, CARRIER CORE PARTICLES FOR ELECTROPHOTOGRAPHIC DEVELOPER, CARRIER FOR ELECTROPHOTOGRAPHIC DEVELOPER, AND ELECTROPHOTOGRAPHIC DEVELOPER - This invention is directed to a method for manufacturing carrier core particles for electrophotographic developer containing iron, manganese, and calcium as a core composition. The method includes (A) a mixing step of mixing an iron-containing raw material, a manganese-containing raw material, and a calcium-containing raw material to prepare a mixture thereof, (C) a granulation step of granulating the mixture after the mixing step, and (D) a firing step of firing a powdery material, which is obtained by granulating the mixture in the granulation step, at a predetermined temperature to form a magnetic phase. The calcium-containing raw material is provided in a granular form, and primary particles of the calcium-containing raw material have a volume mean diameter of 1 μm or less. | 08-06-2015 |
20150187887 | III NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a III nitride semiconductor device higher heat dissipation performance, and a method of manufacturing a III nitride semiconductor device which makes it possible to fabricate such a III nitride semiconductor device at higher yield. In a method of a III nitride semiconductor device, a semiconductor structure obtained by sequentially stacking an n-layer, an active layer, and a p-layer is formed on a growth substrate; a support body including a first support electrically connected to an n-layer to serve as an n-side electrode, a second support electrically connected to a p-layer to serve as a p-side electrode, and structures made of an insulator for insulation between first and second supports is formed on the p-layer side of the semiconductor structure; and the growth substrate is separated using a lift-off process. The first support and the second support are grown by plating. | 07-02-2015 |
20150102964 | BOOSTER ANTENNA AND METHOD FOR PRODUCING SAME - A silver particle dispersing solution, which contains 50-70% by weight of silver particles having an average particle diameter of 20 nm or less, is applied on a substrate by the flexographic printing, and then, calcined to produce a booster antenna wherein a silver conductive film, which contains 10-50% by volume of a sintered body of the silver particles and which has a volume resistivity of 3-100 μΩ·cm, a surface resistivity of 0.5Ω/□ or less and a thickness of 1-6 μm, is formed on the substrate. Thus, there is provided a booster antenna which has excellent electrical characteristics and flexibility and which can be inexpensively mass-produced. | 04-16-2015 |
20150028085 | BONDING MATERIAL AND BONDING METHOD IN WHICH SAID BONDING MATERIAL IS USED - The occurrence of uneven drying in the center and end of a surface of a bonding layer during a desolvation process of a pre-drying step is reduced to ensure highly reliable bonding without peeling of a bonding surface even after repeated exposure to heat shock after bonding. The bonding material of the present invention to achieve the object contains silver nanoparticles coated with organic substance having 6 or less carbon atoms and having an average primary particle diameter of 10 to 30 nm as main silver particles, silver nanoparticles coated with an organic substance having 6 or less carbon atoms and having an average primary particle diameter of 100 to 200 nm as secondary silver particles, two kinds of solvents having different boiling points, and a dispersant. | 01-29-2015 |
20140356642 | METALLIC MAGNETIC POWDER AND MANUFACTURING METHOD OF THE SAME, MAGNETIC PAINTING, MAGNETIC POWDER FOR MAGNETIC THERAPY, AND MAGNETIC RECORDING MEDIUM - A metallic magnetic powder where a primary particle of each metallic magnetic particle is a powder without forming an aggregate, and a method of making the same that includes manufacturing a metallic magnetic powder constituted of metallic magnetic particles, containing a metallic magnetic phase, with Fe, or Fe and Co as main components, rare earth elements or yttrium and one or more non-magnetic components removing the non-magnetic component from the metallic magnetic with a reducing agent, while making a complexing agent exist for forming a complex with the non-magnetic component in water; oxidizing the metallic magnetic particle with the non-magnetic component removed; substituting water adhered to the oxidized metallic magnetic particle with an organic solvent; and coating the surface of the metallic magnetic particle with an organic matter different from the organic solvent, while maintaining a wet condition of the metallic magnetic particle with the organic solvent adhered thereto. | 12-04-2014 |
20140339029 | MAGNETIC FUNCTIONAL FLUID, DAMPER AND CLUTCH USING MAGNETIC FUNCTIONAL FLUID - Magnetic functional fluid includes dispersion medium; and dispersed particles which are dispersed in the dispersion medium, wherein the dispersed particles includes: first ferromagnetic particles having an average particle diameter of 0.5 μm to 50 μm; and second ferromagnetic particles each having a needle-like shape, each having a smaller particle size than the first ferromagnetic particles, and each having a length ratio of a long axis to a short axis of 2 or more. | 11-20-2014 |
20140319557 | VERTICALLY STRUCTURED GROUP III NITRIDE SEMICONDUCTOR LED CHIP AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a vertically structured Group III nitride semiconductor LED chip includes a first step of forming a light emitting structure laminate; a second step of forming a plurality of separate light emitting structures by partially removing the light emitting structure laminate to partially expose the growth substrate; a third step of forming a conductive support, which conductive support integrally supporting the light emitting structures; a fourth step of separating the growth substrate by removing the lift-off layer; and a fifth step of dividing the conductive support between the light emitting structures thereby singulating a plurality of LED chips each having the light emitting structure. A first through-hole is formed to open in a central region of each of the light emitting structures such that at least the lift-off layer is exposed, and an etchant is supplied from the first through-hole in the fourth step. | 10-30-2014 |
20140284770 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The method of manufacturing a semiconductor device according to the present invention includes: a step of forming a semiconductor laminate on a growth substrate with a lift-off layer therebetween; a step of providing grooves in a grid pattern in the semiconductor laminate, thereby forming a plurality of semiconductor structures each having a nearly quadrangular transverse cross-sectional shape; a step of forming a conductive support body; and a step of removing the lift-off layer using a chemical lift-off process, in which step, in supplying an etchant to the grooves via through-holes provided in a portion above the grooves, the lift-off layer is etched from only one side surface of each semiconductor structure. | 09-25-2014 |
20140272118 | METHOD FOR PRODUCING SILVER CONDUCTIVE FILM - A silver conductive film is formed on a substrate in a continuous roll-to-roll system by applying a fine silver particle dispersing solution, which contains 30 to 70 wt % of fine silver particles dispersed in a water based dispersing medium, to the substrate via a halide, such as a chlorine compound, which is applied to the substrate, by flexographic printing, and thereafter, heating the substrate at 60 to 200° C. for 0.1 to 5 seconds in an infrared (IR) heating open, which is installed on the printing path, to carry out calcination. | 09-18-2014 |
20140242511 | METHOD FOR MANUFACTURING CARRIER CORE PARTICLES FOR ELECTROPHOTOGRAPHIC DEVELOPER, CARRIER CORE PARTICLES FOR ELECTROPHOTOGRAPHIC DEVELOPER, CARRIER FOR ELECTROPHOTOGRAPHIC DEVELOPER, AND ELECTROPHOTOGRAPHIC DEVELOPER - Provided is a method for manufacturing carrier core particles for electrophotographic developer capable of stably maintaining high chargeability over a long time. The method for manufacturing carrier core particles includes a granulation step of granulating a mixture of raw materials containing manganese, iron, strontium, and calcium and a firing step of firing the mixture granulated in the granulation step. The firing step includes a heating process of heating the granular mixture with an increase in temperature to a predetermined degree and a cooling process of cooling the granular mixture, after the heating process, in an atmosphere with an oxygen concentration ranging from 5000 ppm to 20000 ppm. The molar ratio of the sum of strontium and calcium to the sum of the manganese, iron, strontium, and calcium is 0.0026 to 0.013. | 08-28-2014 |
20140217457 | LIGHT-EMITTING ELEMENT CHIP AND MANUFACTURING METHOD THEREFOR - There is provided a light-emitting element chip which can be safely assembled and a manufacturing method therefor. A light-emitting element chip | 08-07-2014 |
20140209862 | GROUP III NITRIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - Provided is a Group III nitride epitaxial substrate that can suppress the occurrence of breakage during a device formation process and a method for manufacturing the same. A Group III nitride epitaxial substrate according to the present invention includes a Si substrate, an initial layer in contact with the Si substrate, and a superlattice laminate, formed on the initial layer, including a plurality of sets of laminates, each of the laminates including, in order, a first layer made of AlGaN with an Al composition ratio greater than 0.5 and 1 or less and a second layer made of AlGaN with an Al composition ratio greater than 0 and 0.5 or less. The Al composition ratio of the second layer progressively decreases with distance from the substrate. | 07-31-2014 |
20140205527 | METHOD OF PRODUCING GAAS SINGLE CRYSTAL AND GAAS SINGLE CRYSTAL WAFER - A method of producing a GaAs single crystal having high carrier concentration and high crystallinity and to provide a GaAs single crystal wafer using such a GaAs single crystal. In the method of producing a GaAs single crystal, a vertical boat method is performed with a crucible receiving a seed crystal, a Si material, a GaAs material serving as an impurity, solid silicon dioxide, and a boron oxide material, thereby growing a GaAs single crystal. | 07-24-2014 |
20140199204 | CUPROUS OXIDE POWDER AND METHOD FOR PRODUCING SAME - There are provided a cuprous oxide powder having a smaller particle diameter than that of conventional cuprous oxide powders, and a method for producing the cuprous oxide powder by a chemical reducing process. In a method for producing a cuprous oxide powder by adding a reducing agent, such as a reducing sugar, to a solution containing copper hydroxide, which is formed by adding one of an alkali solution and a copper ion containing solution to the other thereof, to deposit cuprous oxide particles by reduction, 0.00001 to 0.04 moles (10 to 40000 ppm) of ferrous ions with respect to the amount of copper ions in the copper ion containing solution are added to the copper ion containing solution before forming copper hydroxide, to produce a cuprous oxide powder which has a mean primary particle diameter of not greater than 0.5 micrometers when it is measured by a scanning electron microscope (SEM), the cuprous oxide powder having a 50% particle diameter (D | 07-17-2014 |
20140166943 | P-AlGAN LAYER AND GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A p-AlGaN layer doped with magnesium is provided that includes an aluminum composition ratio x of 0.2 or more and less than 0.5 and a carrier concentration of 2.5×10 | 06-19-2014 |
20140154623 | CARRIER CORE PARTICLES FOR ELECTROPHOTOGRAPHIC DEVELOPER, CARRIER FOR ELECTROPHOTOGRAPHIC DEVELOPER, ELECTROPHOTOGRAPHIC DEVELOPER AND METHOD FOR MANUFACTURING THE CARRIER CORE PARTICLES - The carrier core particles for electrophotographic developer include a core composition expressed by a general formula Fe | 06-05-2014 |
20140120359 | LOW-TEMPERATURE SINTERABLE METAL NANOPARTICLE COMPOSITION AND ELECTRONIC ARTICLE FORMED USING THE COMPOSITION - [OBJECT] A composition of a metal nanoparticle is provided in which reproducibility in a method of producing a metal film with excellent low-temperature sinterable properties is improved. An article using the metal nanoparticle composition is also provided. | 05-01-2014 |
20140113109 | BONDING MATERIAL AND BONDED OBJECT PRODUCED USING SAME - A bonding material using silver nanoparticles considerably changes in coating-material property in response to a slight change in composition, and the stability thereof has been insufficient for large-amount application. A bonding material which uses silver nanoparticles, meets the requirements for mass printing, attains dimensional stability, and gives a smooth printed surface is provided. The bonding material includes silver nanoparticles which have at least an average primary particle diameter of 1 nm to 200 nm and have been coated with an organic substance having 8 or less carbon atoms, a dispersion medium, and a viscosity modifier composed of an organic substance, and has a viscosity (measured at a shear rate of 15.7 [1/s]) of 100 Pa·s or lower and a thixotropic ratio (measured at a shear rate of 3.1 [1/s]/measured at a shear rate of 15.7 [1/s]) of 4 or lower. | 04-24-2014 |
20140017609 | METHOD FOR MANUFACTURING CARRIER CORE PARTICLES FOR ELECTROPHOTOGRAPHIC DEVELOPER, CARRIER CORE PARTICLES FOR ELECTROPHOTOGRAPHIC DEVELOPER, CARRIER FOR ELECTROPHOTOGRAPHIC DEVELOPER, AND ELECTROPHOTOGRAPHIC DEVELOPER - A method for manufacturing carrier core particles for electrophotographic developer including a slurrying step (A) of making an iron-containing raw material and a strontium-containing raw material into slurry, a granulation step (B) of granulating the slurry mixture obtained in the slurrying step, and a firing step (C) of firing a powdery material, which is obtained by granulating the slurry mixture in the granulation step, at a predetermined temperature to form a magnetic phase. The slurrying step makes the iron-containing raw material into the slurry containing the iron-containing raw material having a volume diameter D | 01-16-2014 |
20140017606 | FERRITE PARTICLES AND ELECTROPHOTOGRAPHIC CARRIER AND ELECTROPHOTOGRAPHIC DEVELOPER USING SAME - A material expressed as a composition formula M | 01-16-2014 |
20140015105 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - The purpose of the present invention is to provide a good ohmic contact for an n-type Group-III nitride semiconductor. An n-type GaN layer and a p-type GaN layer are aequentially formed on a lift-off layer (growth step). A p-side electrode is formed on the top face of the p-type GaN layer. A copper block is formed over the entire area of the top face through a cap metal. Then, the lift-off layer is removed by making a chemical treatment (lift-off step). Then, a laminate structure constituted by the n-type GaN layer, with which the surface of the N polar plane has been exposed, and the p-type GaN layer is subjected to anisotropic wet etching (surface etching step). The N-polar surface after the etching has irregularities constituted by {10-1-1} planes. Then, an n-side electrode is formed on the bottom face of the n-type GaN layer (electrode formation step). | 01-16-2014 |
20140001508 | SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME | 01-02-2014 |
20130344431 | CARRIER CORE PARTICLES FOR ELECTROPHOTOGRAPHIC DEVELOPER, CARRIER FOR ELECTROPHOTOGRAPHIC DEVELOPER, AND ELECTROPHOTOGRAPHIC DEVELOPER - The carrier core particles for electrophotographic developer have a volume size distribution with a median particle size ranging from 30 μm to 40 μm, the ratio of the carrier core particles having a diameter of 22 μm or lower in the volume size distribution is from 1.0% to 2.0%, the ratio of the carrier core particles having a diameter of 22 μm or lower in a number size distribution is 10% or lower, and the magnetization of the carrier core particles in an external magnetic field of 1000 Oe is from 50 emu/g to 75 emu/g. | 12-26-2013 |
20130323529 | BONDING MATERIAL AND BONDING BODY, AND BONDING METHOD - There is provided a bonding material capable of forming a bonding body under an inert gas atmosphere such as a nitrogen atmosphere, and capable of exhibiting a bonding strength that endures a practical use even if not a heat treatment is applied thereto at a high temperature, which is the bonding material containing silver nanoparticles coated with a fatty acid having a carbon number of 8 or less and having an average primary particle size of 1 nm or more and 200 nm or less, and silver particles having an average particle size of 0.5 μm or more and 10 μm or less, and an organic material having two or more carboxyl groups. | 12-05-2013 |
20130292641 | SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME - To provide a semiconductor device including a functional laminate having flatness and crystallinity improved by effectively passing on the crystallinity and flatness improved in a buffer to the functional laminate, and to provide a method of producing the semiconductor device; in the semiconductor device including the buffer and the functional laminate having a plurality of nitride semiconductor layers, the functional laminate includes a first n-type or i-type Al | 11-07-2013 |
20130285074 | LUMINESCENT DEVICE AND MANUFACTURING METHOD FOR LUMINESCENT DEVICE AND SEMICONDUCTOR DEVICE - A luminescent device and a manufacturing method for the luminescent device and a semiconductor device which are free from occurrence of cracks in a compound semiconductor layer due to the internal stress in the compound semiconductor layer at the time of chemical lift-off. The luminescent device manufacturing method includes forming a device region on part of an epitaxial substrate through a lift-off layer; forming a sacrificing portion, being not removed in a chemical lift-off step, around device region on epitaxial substrate; covering epitaxial substrate and semiconductor layer and forming a covering layer such that level of surface thereof in the region away from device region is lower than luminescent layer surface; removing covering layer on semiconductor layer, and that on sacrificing portion surface; forming a reflection layer on covering layer surface and semiconductor layer surface; and forming a supporting substrate by providing plating on reflection layer. | 10-31-2013 |
20130270488 | METAL PARTICLE POWDER AND PASTE COMPOSITION USING SAME - It is important that the metal particles used in a conductive paste used for wiring have the characteristic of being easily dispersed in a polar solvent in combination with another material such as a resin used in a paste. Provided is a metal particle powder which exhibits a pH value of 6 or less when 0.5 g of the metal particles to be evaluated are added to 100 mL of a potassium hydroxide solution with a pH of 11, and then an aqueous nitric acid solution in an amount in which pH becomes 5 by adding 0.10 mol/L nitric acid to 100 mL of a potassium hydroxide solution and 10 mL of ethyl alcohol (blank solution) with a pH of 11 is added. | 10-17-2013 |
20130234078 | SILVER PARTICLE-CONTAINING COMPOSITION, DISPERSION SOLUTION, AND PASTE AND METHOD FOR MANUFACTURING THE SAME - The method for manufacturing a silver particle-containing composition according to the invention is directed to a method for manufacturing a silver particle-containing composition coated with a fatty acid and includes a step (A) of preparing silver particles coated with a first fatty acid (a) with 3 to 7 carbon atoms, a second fatty acid (b) with 2 to 20 carbon atoms, and a solvent in which the first and second fatty acids can disperse, respectively, a step (B) of adding the silver particles coated with the first fatty acid (a) and the second fatty acid (b) into the solvent, and a step (C) of substituting the second fatty acid (b) for the first fatty acid (a) coating the silver particles after the addition step. | 09-12-2013 |
20130193471 | III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A III nitride semiconductor light emitting device with improved light emission efficiency achieved without significantly increasing forward voltage by achieving both good ohmic contact between an electrode and a semiconductor layer, and sufficient functionality of a reflective electrode layer, and a method for manufacturing the same. The III nitride semiconductor light emitting device has a III nitride semiconductor laminate including an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer; an n-side electrode, a p-side electrode; and a composite layer having a reflective electrode portion and a contact portion made of Al | 08-01-2013 |
20130189614 | CARRIER CORE PARTICLE FOR ELECTROPHOTOGRAPHIC DEVELOPER, CARRIER FOR ELECTROPHOTOGRAPHIC DEVELOPER AND ELECTROPHOTOGRAPHIC DEVELOPER - A carrier core particle for an electrophotographic developer including a core composition expressed by a general formula: (Mn | 07-25-2013 |
20130181188 | III NITRIDE EPITAXIAL SUBSTRATE AND DEEP ULTRAVIOLET LIGHT EMITTING DEVICE USING THE SAME - A III nitride epitaxial substrate which makes it possible to obtain a deep ultraviolet light emitting device with improved light output power is provided. A III nitride epitaxial substrate | 07-18-2013 |
20130177471 | COPPER POWDER FOR CONDUCTIVE PASTE AND METHOD FOR PRODUCING SAME - There are provided a copper powder for conductive paste, which comprises monodisperse and spherical fine copper particles having a sharp particle size distribution and containing no coarse particles and which can form a thinner electrode film while avoiding a bad influence on electric characteristics thereof, and a method for stably producing such a copper powder for conductive paste. After copper is complexed by adding a complexing agent to an aqueous solution containing copper while blowing air into the solution, the blowing of air is stopped, and then, a reducing agent is added to the solution to deposit copper particles by reduction. | 07-11-2013 |
20130153835 | LOW-TEMPERATURE SINTERING CONDUCTIVE PASTE, CONDUCTIVE FILM USING THE SAME, AND METHOD FOR FORMING CONDUCTIVE FILM - When a substrate having a low heat resistance is used, heat treatment at approximately 120° C. at which deformation does not occur is desirable. When a low resistance is achieved regardless of the type of resin used for a conductive paste, a flexible design of a paste is possible according to purposes, and fields to which the paste could be applied are expanded. Thus, a conductive paste capable of forming a conductive film exhibiting a high conductivity even at low temperatures of approximately 120° C. regardless of whether the constituting resin is a thermosetting resin or a thermoplastic resin is provided. In a method for forming a conductive film, a conductive paste in which a dicarboxylic acid having 2 to 8 carbon atoms is added to a paste including silver nanoparticles coated with an organic substance having 2 to 6 carbon atoms, a dispersion medium, and a resin is used. | 06-20-2013 |
20130137246 | METHOD OF PRODUCING GROUP III NITRIDE SEMICONDUCTOR GROWTH SUBSTRATE - An object of the present invention is to provide a method for producing a Group III nitride semiconductor epitaxial substrate, a Group III nitride semiconductor element, and a Group III nitride semiconductor free-standing substrate, which have good crystallinity, with not only AlGaN, GaN, and GaInN the growth temperature of which is 1050° C. or less, but also with Al | 05-30-2013 |
20130095997 | METHOD FOR PRODUCING CATALYST COMPOSITION, CATALYST COMPOSITION, DIESEL PARTICULATE FILTER USING THE SAME, AND EXHAUST GAS PURIFICATION SYSTEM - Provided is a catalyst having the ability to combust PM at relatively low temperatures and having high HC and CO removal (conversion) efficiency even at the above operating temperature. In the catalyst composition, at least one kind of platinum group element selected from Pt, Rh, and Pd is dispersed in and supported by a platinum group-supporting carrier containing at least one kind of element selected from Zr, Al, Y, Si, Bi, Pr, and Tb, and the platinum group-supporting carrier is supported on the surface of a Ce oxide containing Ce as an essential component. The catalyst composition has both PM combustion activity and gas purification activity. | 04-18-2013 |
20130087807 | EPITAXIAL GROWTH SUBSTRATE, SEMICONDUCTOR DEVICE, AND EPITAXIAL GROWTH METHOD - In heteroepitaxially growing a group-III nitride semiconductor on a Si single crystal substrate, the occurrence of cracks initiating in the wafer edge portion can be suppressed. Region A is an outermost peripheral portion outside the principal surface, being a bevel portion tapered. Regions B and C are on the same plane (the principal surface), region B (mirror-surface portion) being the center portion of the principal surface, and region C a region in the principal surface edge portion surrounding region B. The principal surface has a plane orientation, and in region B, is mirror-surface-finished. Region B occupies most of the principal surface of this Si single crystal substrate, and a semiconductor device is manufactured therein. Region C (surface-roughened portion) has a plane orientation as with region B, however, region B is mirror-surface-finished, whereas region C is surface-roughened. | 04-11-2013 |
20130081759 | LOW-TEMPERATURE-SINTERABLE BONDING MATERIAL, AND BONDING METHOD USING THE BONDING MATERIAL - Provided is a bonding material which enables formation of a bonded article in nitrogen, and can exhibit bonding strength to withstand practical use while having reduced bonding fluctuations between samples without a heat treatment procedure under pressurized or high temperature conditions. The bonding material comprises: silver nanoparticles having an average primary particle diameter of 1 to 200 nm and coated with an organic substance having 8 carbon atoms or less; a dispersion medium having a boiling point of 230° C. or higher; and a flux component including an organic matter having at least two carboxyl groups. Particularly, it is preferable to use the silver nanoparticles and submicron silver particles in combination. | 04-04-2013 |
20130011781 | CARRIER CORE PARTICLE FOR ELECTROPHOTOGRAPHIC DEVELOPER, METHOD FOR MANUFACTURING THE SAME, CARRIER FOR ELECTROPHOTOGRAPHIC DEVELOPER AND ELECTROPHOTOGRAPHIC DEVELOPER - A carrier core particle for an electrophotographic developer includes a composition expressed by a general formula: Mn | 01-10-2013 |
20130011780 | CARRIER CORE PARTICLE FOR ELECTROPHOTOGRAPHIC DEVELOPER, CARRIER FOR ELECTROPHOTOGRAPHIC DEVELOPER AND ELECTROPHOTOGRAPHIC DEVELOPER - A carrier core particle for an electrophotographic developer includes a core composition expressed by a general formula: Mn | 01-10-2013 |
20120326209 | SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME - To provide a semiconductor device including a functional laminate having flatness and crystallinity improved by effectively passing on the crystallinity and flatness improved in a buffer to the functional laminate, and to provide a method of producing the semiconductor device; in the semiconductor device including the buffer and the functional laminate having a plurality of nitride semiconductor layers, the functional laminate includes a first n-type or i-type Al | 12-27-2012 |
20120299465 | LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - To provide a light emitting element, having: a lamination structure including a first conductive layer and a second conductive layer with a light emitting layer interposed between them; a groove structure in which the second conductive layer and the light emitting layer are divided into large and small two parts; a second conductive electrode pad that is electrically connected to the second conductive layer on the divided larger second conductive layer, a first conductive electrode pad on the divided smaller second conductive layer, and two or more electrical contacts connected to the first conductive layer so as to be independent from each other, by a conductive wiring extending to the first conductive layer, with the first conductive electrode pad as a start point. | 11-29-2012 |
20120298908 | HEXAGONAL FERRITE MAGNETIC POWDER AND MAGNETIC RECORDING MEDIUM USING THE SAME - A hexagonal ferrite magnetic powder with a reduced amount of contaminants such as organic materials and a magnetic recording medium using the same are provided. The magnetic recording medium is formed using such a hexagonal ferrite magnetic powder that, when 0.10 mol/L nitric acid is added in an amount that changes the pH of 100 mL of a pH 11 potassium hydroxide solution (a blank solution) to 5 to a solution prepared by adding 0.05 g of the powder to 100 mL of the pH 11 potassium hydroxide solution, the pH of the resultant solution is 5 or higher. | 11-29-2012 |
20120298009 | BONDING MATERIAL AND BONDING METHOD USING THE SAME - A method of forming a bonded product using metal nanoparticles is provided. More specifically, provided is a paste containing a flux component that can form a metal phase even in an inert atmosphere. The use of this paste allows a bonding material that can give a practically acceptable bonding strength to be provided in an inert atmosphere such as a nitrogen atmosphere at low temperatures without performing conventionally used pressurization. The paste is a bonding material configured to include: silver nanoparticles having an average primary particle diameter of 1 to 200 nm and coated with an organic material having 8 or less carbon atoms; a flux component having at least two carboxyl groups; and a dispersion medium. The use of this bonding material allows materials to be bonded even at a temperature of 300° C. or lower. | 11-29-2012 |
20120295195 | CARRIER CORE PARTICLES FOR ELECTROPHOTOGRAPHIC DEVELOPER, METHOD FOR MANUFACTURING THE SAME, CARRIER FOR ELECTROPHOTOGRAPHIC DEVELOPER AND ELECTROPHOTOGRAPHIC DEVELOPER - The carrier core particles | 11-22-2012 |
20120273759 | EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE AND METHOD OF PRODUCING THE SAME - An epitaxial substrate for an electronic device, in which a lateral direction of the substrate is defined as a main current conducting direction and a warp configuration of the epitaxial substrate is adequately controlled, as well as a method of producing the epitaxial substrate. Specifically, the epitaxial substrate for an electron device, including: a Si single crystal substrate; and a Group III nitride laminated body formed by epitaxially growing plural Group III nitride layers on the Si single crystal substrate, wherein a lateral direction of the epitaxial substrate is defined as a main current conducting direction, is characterized in that the Si single crystal substrate is a p-type substrate having a specific resistance value of not larger than 0.01 Ω·cm. | 11-01-2012 |
20120263642 | METHOD FOR IMPROVING COERCIVE FORCE OF EPSILON-TYPE IRON OXIDE, AND EPSILON-TYPE IRON OXIDE - To provide a method for improving a coercive force of epsilon-type iron oxide particles, and an epsilon-type iron oxide. Specifically, to provide a method for improving the coercive force of an epsilon-type iron oxide comprising: substituting Fe-site of the epsilon-type iron oxide with other element, while not substituting Fe of D-site in the epsilon-type iron oxide with other element, and the epsilon type iron oxide. | 10-18-2012 |
20120256327 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - A semiconductor device and a manufacturing method therefor, wherein, during lift-off, no cracks due to internal stresses occur in the compound semiconductor layer. A method for manufacturing a semiconductor device having a structure in which a semiconductor layer is bonded on a supporting substrate, including: a device region formation step of forming a device region including the semiconductor layer on a growth substrate through a lift-off layer; a columnar member formation step of forming a columnar member on the growth substrate; a bonding step of bonding the tops of the semiconductor layer and the columnar member to a supporting substrate; a lift-off step of separating the bottom face of the semiconductor layer from the growth substrate by removing the lift-off layer, and not separating the columnar member from the growth substrate; and a step of separating the columnar member from the supporting substrate. | 10-11-2012 |
20120248458 | VERTICALLY STRUCTURED GROUP III NITRIDE SEMICONDUCTOR LED CHIP AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing vertically structured Group III nitride semiconductor LED chips includes a step of forming a light emitting laminate on a growth substrate; a step of forming a plurality of separate light emitting structures by partially removing the light emitting laminate to partially expose the growth substrate; a step of forming a conductive support on the plurality of light emitting structures; a step of lifting off the growth substrate from the plurality of light emitting structures; and a step of cutting the conductive support thereby singulating a plurality of LED chips each having the light emitting structure. The step of partially removing the light emitting laminate is performed such that each of the plurality of light emitting structures has a top view shape of a circle or a 4n-gon en” is a positive integer) having rounded corners. | 10-04-2012 |
20120248387 | P-ALGAN LAYER, METHOD OF MANUFACTURING THE SAME, AND GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - The method according to the present invention includes a first step of supplying the Group V source gas at a flow rate B | 10-04-2012 |
20120244050 | CLEANING AGENT FOR SILVER-CONTAINING COMPOSITION, METHOD FOR REMOVING SILVER-CONTAINING COMPOSITION, AND METHOD FOR RECOVERING SILVER - A cleaning agent for a silver-containing composition is provided which can readily remove silver adhered to an object to be cleaned with excellent operability and low environmental loads. This cleaning agent for the silver-containing composition includes an iron nitrate aqueous solution and used to remove silver derived from a composition containing silver nanoparticles having an average diameter of 1 nm to 100 nm adhered to the object to be cleaned. | 09-27-2012 |
20120223328 | GROUP III NITRIDE EPITAXIAL LAMINATE SUBSTRATE - A Group III nitride epitaxial laminate substrate comprising a substrate, a buffer and a main laminate in this order, wherein the buffer includes an initial growth layer, a first superlattice laminate and a second superlattice laminate in this order, the first superlattice laminate includes five to 20 sets of first AlN layers and second GaN layers, the first AlN layers and the second GaN layers being alternately stacked, and each one set of the first AlN layer and the second GaN layer has a thickness of less than 44 nm, the second superlattice laminate includes a plurality of sets of first layers made of an AlN material or an AlGaN material and second layers made of an AlGaN material having a different band gap from the first layers, the first and second layers being alternately stacked. | 09-06-2012 |
20120208121 | CARRIER CORE MATERIAL FOR ELECTROPHOTOGRAPHIC DEVELOPER, METHOD FOR MANUFACTURING THE SAME, CARRIER FOR ELECTROPHOTOGRAPHIC DEVELOPER AND ELECTROPHOTOGRAPHIC DEVELOPER - A carrier core material for electrophotographic developer containing a soft ferrite, expressed by (Mg | 08-16-2012 |
20120199782 | HEXAGONAL CRYSTAL FERRITE MAGNETIC POWDER FOR MAGNETIC RECORDING, METHOD FOR PRODUCING THE SAME, AND MAGNETIC RECORDING MEDIUM USING THE POWDER - A hexagonal crystal ferrite magnetic powder having high magnetic characteristics while having a small particle volume and a high specific surface area is provided, and a high-density magnetic recording medium using the powder. A method for producing a hexagonal crystal ferrite formed using a glass crystallization method includes the steps of: mixing a glass matrix with raw materials including iron, bismuth, a divalent metal (M1), a tetravalent metal (M2), any one kind (A) of barium, strontium, calcium, and lead, and at least one kind of rare earth element (represented by R) having a mole equal to or less than that of the iron; heating the mixed raw material to obtain a glass body; quenching the glass body, pulverizing the glass body, and performing a heat treatment, and washing the glass body after the heat treatment with an acid solution. | 08-09-2012 |
20120187288 | SAMPLE HOLDER FOR MALDI MASS SPECTROMETRIC ANALYSIS, AND MASS SPECTROMETRIC ANALYSIS METHOD - Used is a sample holder for MALDI mass spectrometry, which has a CuO secondary particle as a laser-beam-absorbing matrix and in which the secondary particle comprises an aggregate of CuO primary particles having an average particle diameter of 100 nm or smaller and has an uneven surface arising from the shape formed by the primary particles constituting the outermost surface of the secondary particle. As the CuO secondary particle, usable is one derived from a CuO powder produced by baking basic copper carbonate in air at 200 to 300° C., and the basic copper carbonate is produced in a process of mixing an aqueous ammonium hydrogencarbonate solution and an aqueous copper nitrate solution. The CuO secondary particle has an average particle diameter of, for example, from 0.3 to 10 μm. | 07-26-2012 |
20120177897 | LOW-TEMPERATURE SINTERED SILVER NANOPARTICLE COMPOSITION AND ELECTRONIC ARTICLES FORMED USING THE SAME - A silver nanoparticle composition is provided which is possible to be sintered through sintering at a low temperature in a short time and to form silver electro conductive film and wiring which is favorable for adhesion to a substrate and low in resistance, and articles using the same are provided. The silver nanoparticle composition is provided, wherein a main component of a solvent is water, a pH of the composition is within a range of 5.3 to 8.0, a silver nanoparticle included in the composition is protected by an organic acid or a derivative thereof, and the content of the organic acid or the derivative thereof with respect to silver is 2 to 20% by mass. | 07-12-2012 |
20120175589 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME - A nitride semiconductor device is provided, in which a superlattice strain buffer layer using AlGaN layers having a low Al content or GaN layers is formed with good flatness, and a nitride semiconductor layer with good flatness and crystallinity is formed on the superlattice strain buffer layer. A nitride semiconductor device includes a substrate; an AlN strain buffer layer made of AlN formed on the substrate; a superlattice strain buffer layer formed on the AlN strain buffer layer; and a nitride semiconductor layer formed on the superlattice strain buffer layer, and is characterized in that the superlattice strain buffer layer has a superlattice structure formed by alternately stacking first layers made of Al | 07-12-2012 |
20120168719 | EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE, IN WHICH CURRENT FLOWS IN LATERAL DIRECTION AND METHOD OF PRODUCING THE SAME - To provide an epitaxial substrate for electronic devices, in which current flows in a lateral direction, which enables accurate measurement of the sheet resistance of HEMTs without contact, and to provide a method of efficiently producing the epitaxial substrate for electronic devices, the method characteristically includes the steps of forming a barrier layer against impurity diffusion on one surface of a high-resistance Si-single crystal substrate, forming a buffer as an insulating layer on the other surface of the high-resistance Si-single crystal substrate, producing an epitaxial substrate by epitaxially growing a plurality of III-nitride layers on the buffer to form a main laminate, and measuring resistance of the main laminate of the epitaxial substrate without contact. | 07-05-2012 |
20120153440 | EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE AND METHOD OF PRODUCING THE SAME - An epitaxial substrate for electronic devices, in which current flows in a lateral direction and of which warpage configuration is properly controlled, and a method of producing the same. The epitaxial substrate for electronic devices is produced by forming a bonded substrate by bonding a low-resistance Si single crystal substrate and a high-resistance Si single crystal substrate together; forming a buffer as an insulating layer on a surface of the bonded substrate on the high-resistance Si single crystal substrate side; and producing an epitaxial substrate by epitaxially growing a plurality of III-nitride layers on the buffer to form a main laminate. The resistivity of the low-resistance Si single crystal substrate is 100 Ω·cm or less, and the resistivity of the high-resistance Si single crystal substrate is 1000 Ω·cm or more. | 06-21-2012 |
20120103515 | BONDING MATERIAL USING METAL NANOPARTICLES AND BONDING METHOD - In a bonding material using nanoparticles and a bonding method, use in combination with microparticles is proposed. However, there is the problem in which it is not easy to uniformly mix the nanoparticles and the microparticles. The present invention uses a bonding material including metal nanoparticles having an average particle diameter of 100 nm or less and a surface coated with an organic substance having 6 to 8 carbon atoms, and a polar solvent in an amount of 5 to 20% by mass with respect to a powder of the metal nanoparticles, and objects to be bonded with the bonding material interposed therebetween are fired at 200 to 350° C. under pressure. Thus, the metal nanoparticles are melted and returned to a bulk material, and therefore a bonding layer of the bulk material can be formed at a low temperature equal to or lower than a melting point. | 05-03-2012 |
20120091435 | EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE AND METHOD OF PRODUCING THE SAME - An epitaxial substrate for electronic devices is provided, which can improve vertical breakdown voltage and provides a method of producing the same. | 04-19-2012 |
20120061683 | GROUP III NITRIDE SEMICONDUCTOR GROWTH SUBSTRATE, GROUP III NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, GROUP III NITRIDE SEMICONDUCTOR ELEMENT AND GROUP III NITRIDE SEMICONDUCTOR FREE-STANDING SUBSTRATE, AND METHOD OF PRODUCING THE SAME - An object of the present invention is to provide a Group III nitride semiconductor epitaxial substrate, a Group III nitride semiconductor element, and a Group III nitride semiconductor free-standing substrate, which have good crystallinity, with not only AlGaN, GaN, and GaInN the growth temperature of which is 1050° C. or less, but also with Al | 03-15-2012 |
20120045573 | SILVER CONDUCTIVE FILM AND PRODUCTION METHOD THEREOF - Provided is a silver conductive film, a thin film of silver comprising a sintered layer of silver particles having a mean particle size D | 02-23-2012 |
20120015189 | FERRITE POWDER FOR BONDED MAGNET, METHOD FOR MANUFACTURING FERRITE POWDER, AND BONDED MAGNET USING FERRITE POWDER - A bonded magnet is required to have a large energy product, which is the product of magnetization Br and coercive force Hc. However, in a ferrite powder for a bonded magnet, when the particle diameter is reduced to improve the coercive force, the packing properties are impaired, and the Br is lowered. | 01-19-2012 |
20120012373 | Submount and Method of Manufacturing the Same - A submount with an electrode layer having excellent wettability in soldering and method of manufacturing the same are disclosed. A submount ( | 01-19-2012 |
20120007116 | SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF PRODUCING THE SAME - A semiconductor light emitting diode including: a support substrate; an intermediate layer including an intermediate electrode portion, a second conductive semiconductor layer, an active layer, a first conductive semiconductor layer and an upper electrode portion sequentially disposed on the upper surface side of the support substrate in this order; and a lower electrode layer provided on the lower surface side of the support substrate, where: the intermediate layer has at least one intermediate electrode portion extending linearly or in an island-like shape; and the upper electrode portion and the intermediate electrode portion are disposed in such a positional relationship that these electrode portions are in parallel with and offset from each other and a distance between the upper electrode portion and the intermediate electrode portion is within the range of 10 μm to 50 μm. | 01-12-2012 |
20110316030 | SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF PRODUCING THE SAME - A semiconductor light emitting diode comprising: a support substrate; an intermediate layer including an intermediate electrode portion, a second conductive semiconductor layer, an active layer, a first conductive semiconductor layer and an upper electrode portion sequentially disposed on the upper surface side of the support substrate in this order; and a lower electrode layer provided on the lower surface side of the support substrate, wherein: the intermediate layer has at least one intermediate electrode portion extending linearly or in an island-like shape; and the upper electrode portion and the intermediate electrode portion are disposed, in a view obtained by projecting these electrode portions, on an imaginary plane in parallel with the upper surface of the support substrate, respectively, in a positional relationship that these electrode portions, are offset from each other. | 12-29-2011 |
20110305924 | METALLIC MAGNETIC POWDER AND MANUFACTURING METHOD OF THE SAME, MAGNETIC PAINTING, MAGNETIC POWDER FOR MAGNETIC THERAPY, AND MAGNETIC RECORDING MEDIUM - A metallic magnetic powder where a primary particle of each metallic magnetic particle is a powder without forming an aggregate, and a method of making the same that includes manufacturing a metallic magnetic powder constituted of metallic magnetic particles, containing a metallic magnetic phase, with Fe, or Fe and Co as main components, rare earth elements , or yttrium and one or more non-magnetic components removing the non-magnetic component from the metallic magnetic with a reducing agent, while making a complexing agent exist for forming a complex with the non-magnetic component in water; oxidizing the metallic magnetic particle with the non-magnetic component removed; substituting water adhered to the oxidized metallic magnetic particle with an organic solvent; and | 12-15-2011 |
20110298009 | EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE AND METHOD OF PRODUCING THE SAME - An object of the present invention is to provide an epitaxial substrate for an electronic device, in which a lateral direction of the substrate is defined as a main current conducting direction and a warp configuration of the epitaxial substrate is adequately controlled, as well as a method of producing the epitaxial substrate. Specifically, the epitaxial substrate for an electron device, including: a Si single crystal substrate; and a Group III nitride laminated body formed by epitaxially growing plural Group III nitride layers on the Si single crystal substrate, wherein a lateral direction of the epitaxial substrate is defined as a main current conducting direction, is characterized in that the Si single crystal substrate is a p-type substrate having a specific resistance value of not larger than 0.01 Ω·cm. | 12-08-2011 |
20110278508 | COMPOSITION CONTAINING FINE SILVER PARTICLES, PRODUCTION METHOD THEREOF, METHOD FOR PRODUCING FINE SILVER PARTICLES, AND PASTE HAVING FINE SILVER PARTICLES - A composition containing fine silver particles which have a uniform particle size, can form a fine drawing pattern, and have a small environmental impact, a method for producing that composition, a method for producing fine silver particles, and a paste having fine silver particles are provided. | 11-17-2011 |
20110272642 | COMPOSITION CONTAINING FINE SILVER PARTICLES, PRODUCTION METHOD THEREOF, METHOD FOR PRODUCING FINE SILVER PARTICLES, AND PASTE HAVING FINE SILVER PARTICLES - A composition containing fine silver particles which have a uniform particle size, can form a fine drawing pattern, and have a small environmental impact, a method for producing that composition, a method for producing fine silver particles, and a paste having fine silver particles are provided. | 11-10-2011 |
20110266553 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME - An object of the present invention is to provide a nitride semiconductor light-emitting device in which contact resistance generated between an n-contact layer and an n-side electrode is effectively reduced while maintaining satisfactory external quantum efficiency, and a method of efficiently producing the nitride semiconductor light-emitting device. Specifically, the present invention characteristically provides a nitride semiconductor light-emitting device having a semiconductor laminated body including an n-type laminate, a light-emitting layer and a p-type laminate, and an n-side electrode and a p-side electrode, characterized in that: the n-type laminate includes an n-contact layer made of an Al | 11-03-2011 |
20110254135 | III-NITRIDE SEMICONDUCTOR GROWTH SUBSTRATE, III-NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, III-NITRIDE SEMICONDUCTOR ELEMENT, III-NITRIDE SEMICONDUCTOR FREESTANDING SUBSTRATE, AND METHOD FOR FABRICATING THESE - An object of the present invention is to address the problems described herein and to provide a III-nitride semiconductor epitaxial substrate, a III-nitride semiconductor element, and a III-nitride semiconductor freestanding substrate, which have good crystallinity, not only with AlGaN, GaN, or GaInN, the growth temperature of which is at or below 1050° C., but also with Al | 10-20-2011 |
20110253949 | FINE SILVER PARTICLE POWDER, METHOD FOR MANUFACTURING THE SAME, SILVER PASTE USING THE POWDER, AND METHOD OF USE OF THE PASTE - A method suitable for mass production of nanoparticles with a uniform particle diameter is provided. It is an object to provide a powder of the nanoparticle obtained by this method, a dispersion containing the nanoparticles, and a paste containing the nanoparticles. There is provided a method for manufacturing silver particles including the step of reducing silver in a silver solution containing a protective agent composed of an organic material and a copper component in an amount of 1 to 1,000 ppm relative to the amount of silver to obtain particles having an average particle diameter (D | 10-20-2011 |
20110240962 | EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE AND METHOD OF PRODUCING THE SAME - An epitaxial substrate for an electronic device having a Si single crystal substrate, a buffer as an insulating layer formed on the Si single crystal substrate, and a main laminated body formed by plural group III nitride layers epitaxially grown on the buffer, wherein a lateral direction of the epitaxial substrate is defined as an electric current conducting direction. The buffer including at least an initially grown layer in contact with the Si single crystal substrate and a superlattice laminate constituted of a superlattice multilayer structure on the initially grown layer. | 10-06-2011 |
20110236709 | LOW-TEMPERATURE SINTERABLE METAL NANOPARTICLE COMPOSITION AND ELECTRONIC ARTICLE FORMED USING THE COMPOSITION - [Object] A composition of a metal nanoparticle is provided in which reproducibility in a method of producing a metal film with excellent low-temperature sinterable properties is improved. An article using the metal nanoparticle composition is also provided. | 09-29-2011 |
20110176969 | COMPOSITE OXIDE FOR EXHAUST GAS PURIFICATION CATALYST, METHOD FOR MANUFACTURING THE SAME, COATING MATERIAL FOR EXHAUST GAS PURIFICATION CATALYST, AND FILTER FOR DIESEL EXHAUST GAS PURIFICATION - A composite oxide for an exhaust gas purification catalyst is provided which can burn PM in diesel engine exhaust gas at low temperatures and has a good S desorption property. The composite oxide for an exhaust gas purification catalyst is composed of Ce, Bi, Pr, R, and oxygen in a molar ratio of Ce:Bi:Pr:R=(1−x−y−z):x:y:z. The ratios of Ce, Bi, Pr, and R satisfy 007-21-2011 | |
20110175041 | MANUFACTURING METHOD OF ITO PARTICLES, AND ITO POWDER, COATING MATERIAL FOR TRANSPARENT ELECTROCONDUCTIVE MATERIAL AND TRANSPARENT ELECTROCONDUCTIVE FILM - ITO powder and a producing method of the same, capable of producing ITO particles without using a solvent with a high boiling point by a simple treatment method without a heating process in an atmosphere which causes sintering. Also, an ITO powder is provided, which is suitable for a coating material for a transparent electroconductive material, the ITO powder being produced by a first step of dissolving salt containing indium and salt containing tin into an organic solvent, then adding to this organic solvent, an organic solvent containing a basic precipitant, to manufacture a precursor; and a second step of applying heat treatment to the precursor in a pressurizing vessel, to thereby generate ITO particles. | 07-21-2011 |
20110155968 | FINE METAL PARTICLE-CONTAINING COMPOSITION AND METHOD FOR MANUFACTURING THE SAME - A metal-containing composition that can provide, by low-temperature heat treatment, a sintered state comparable to that obtained by high-temperature heat treatment, a conductive paste, a metal film are provided. A method for manufacturing a metal-containing composition that can manufacture the metal-containing composition by simple operation steps is also provided. The metal-containing composition contains fine metal particles, and the ratio ρ | 06-30-2011 |
20110147642 | METHOD OF PRODUCING MAGNETIC POWDER FOR MAGNETIC RECORDING MEDIUM - A magnetic powder for magnetic recording medium comprises acicular particles constituted primarily of Fe, wherein the powder contains Co in an amount such that the Co/Fe ratio is 50 at. % or less and the Co is contained in a manner such that the surface portion has a higher concentration than the core portion of the particles, and upon subjecting the magnetic powder for magnetic recording medium to TG measurement, the powder exhibits at least two oxidation starting points: a low-temperature side oxidation starting point and a high-temperature side oxidation starting point. The magnetic powder achieves improved resistance to oxidation without sacrificing magnetic characteristics. | 06-23-2011 |
20110123830 | METALLIC MAGNETIC POWDER FOR MAGNETIC RECORDING AND PROCESS FOR PRODUCING THE METALLIC MAGNETIC POWDER - According to a method for producing a metallic magnetic powder for magnetic recording, which comprises treatment including, in sequence, a step of allowing a reducing agent to act on a metallic magnetic powder comprising particles having a metallic magnetic phase composed mainly of Fe or Fe and Co and containing one or more of rare earth elements (including Y), Al and Si (these are hereinafter referred to as “nonmagnetic ingredient”), in a liquid containing a complexing agent capable of forming a complex with at least one or more of the nonmagnetic ingredients, to thereby make the nonmagnetic ingredient in the powder particles dissolve out into the liquid (dissolution treatment step), a step of heat treatment in a reducing gas atmosphere (re-reduction treatment step), and a step of heat treatment in an oxidizing gas atmosphere (stabilization treatment step), a metallic magnetic powder for magnetic recording, which comprises particles having a particle length of from 10 nm to 45 nm and an axial ratio of 2 or more and in which the tip part of the particles is rounded, is obtained. | 05-26-2011 |
20110123426 | MAGNETIC POWDER SUITABLE FOR LOW-NOISE MEDIA - An iron system magnetic powder, and particularly an iron system magnetic powder comprised chiefly of Fe | 05-26-2011 |
20110115366 | Light source having phosphor including divalent, trivalent and tetravalent elements - A phosphor having an excitation band relative to lights in the wide range of wavelengths from ultraviolet to visible light, and having an emission spectrum in the red range and so on, with a wide half value width, and an LED and a light source using the phosphor and emitting white and other color lights with good color rendering properties are provided. Powdered raw materials of Ca | 05-19-2011 |
20110115359 | LIGHT-EMITTING ELEMENT - A light-emitting element comprising a substrate; a light-emitting layer disposed above the substrate and emitting a primary light; and, a reflective film disposed between the substrate and the light-emitting layer and formed by at least one layer that reflects the primary light, in which the light-emitting element further comprises a light dispersing multilayered film disposed between the substrate and the reflective film and formed by two or more types of light dispersing layers, and the light dispersing multilayered film multiple-disperses a secondary light into plural wavelengths and discharges the secondary light, which is excited by the primary light passing through the reflective film. | 05-19-2011 |
20110084235 | PHOSPHOR AND MANUFACTURING METHOD THEREFORE, AND LIGHT EMISSION DEVICE USING THE PHOSPHOR - To provide a phosphor having an emission spectrum with a broad peak in a range from green color to yellow color, having a broad and flat excitation band capable of using lights of broad range from near ultraviolet/ultraviolet to blue lights as excitation lights, and having excellent emission efficiency and luminance. The problem is solved by providing the phosphor expressed by a general composition formula MmAaBbOoNn:Z (where element M is one or more kinds of elements having bivalent valency, element A is one or more kinds of elements having tervalent valency, element B is one or more kinds of elements having tetravalent valency, O is oxygen, N is nitrogen, and element Z is one or more kinds of elements acting as the activator.), satisfying 4.0<(a+b)/m<7.0, a/m≧0.5, b/a>2.5, n>o, n=2/3m+a+4/3b−2/3o, and having an emission spectrum with a peak wavelength of 500 nm to 650 nm when excited by light in a wavelength range from 300 nm to 500 nm. | 04-14-2011 |
20110061496 | MAGNETIC METAL POWDER SUITABLE FOR USE IN MAGNETIC RECORDING MEDIA AND METHOD OF MANUFACTURING THE POWDER - A metal magnetic powder for a magnetic recording medium is provided whose particles have a metal magnetic phase, composed mainly of Fe or Fe plus Co, and an oxide layer, wherein the average major axis length of the powder particles is 10-50 nm, the average particle volume including the oxide layer is 5,000 nm | 03-17-2011 |
20110059294 | Si-Doped GaAs single crystal ingot and process for producing the same, and Si-Doped GaAs single crystal wafer produced from Si-Doped GaAs single crystal ingot - This invention provides an Si doped GaAs single crystal ingot, which has a low crystallinity value as measured in terms of etch pit density (EPD) per unit area and has good crystallinity, and a process for producing the same. An Si-doped GaAs single crystal wafer produced in a latter half part in the growth of the Si doped GaAs single crystal ingot is also provided. A GaAs compound material is synthesized in a separate synthesizing oven (a crucible). An Si dopant is inserted into the compound material to prepare a GaAs compound material with the Si dopant included therein. The position of insertion of the Si dopant is one where, when the GaAs compound material is melted, the temperature is below the average temperature. After a seed crystal is inserted into a crucible for an apparatus for single crystal growth, the GaAs compound material with the Si dopant included therein and a liquid sealing compound are introduced into the crucible. The crucible is set in the apparatus for single crystal growth, where the mixture is heat melted and, while stirring the liquid sealing compound, the melt is solidified by a vertical temperature gradient method and the crystal is grown to prepare an Si doped GaAs single crystal ingot. In this case, an Si doped GaAs single crystal wafer is also produced in the latter half part of the growth of the ingot. | 03-10-2011 |
20110027135 | COMPLEX OXIDE FOR EXHAUST GAS PURIFICATION CATALYST, PRODUCTION METHOD THEREOF, COATING MATERIAL FOR EXHAUST GAS PURIFICATION CATALYST, AND DIESEL EXHAUST GAS PURIFICATION FILTER - An oxidation catalyst is provided which is capable of combusting PM in a diesel engine exhaust gas at a low temperature and which has low degradation due to heat generated during combustion (i.e., has high heat resistance). | 02-03-2011 |
20110001127 | SEMICONDUCTOR MATERIAL, METHOD OF MAKING THE SAME, AND SEMICONDUCTOR DEVICE - A semiconductor material is provided comprising: a composition graded layer, formed on a Si substrate or an interlayer formed thereon, comprising a composition of Al | 01-06-2011 |
20100301363 | VERTICAL RESONATOR TYPE LIGHT EMITTING DIODE - A novel vertical resonator type light emitting diode of which has a simplified structure of the reflector layer of its light emitting side an which is resistant to declination of its emission output power towards a high temperature range, has an active layer | 12-02-2010 |
20100301272 | Phosphor and manufacturing method for the same, and light source - To provide a phosphor having an emission characteristic such that a peak wavelength of light emission is in a range from 580 to 680 nm, and having a high emission intensity, and having a flat excitation band with high efficiency for excitation light in a broad wavelength range from ultraviolet to visible light (wavelength range from 250 nm to 550 nm). For example, Ca | 12-02-2010 |
20100295643 | FERRITE POWDERS FOR BONDED MAGNET, PROCESS FOR THE PRODUCTION OF THE POWDERS, AND BONDED MAGNET MADE BY USING THE SAME - The present invention provides ferrite powders for bonded magnet capable of suppressing increase of SFD, while widening a particle size distribution for obtaining flowability and compressed density, and also capable of suppressing deterioration of orientation and magnetizability, and provides a process for a production magnetoplumbite-type ferrite powders containing an oxide of at least one or more kinds of transition metals selected from a group consisting of Zr, Ti, Zn, Co, Mn, and Ni, having a mean particle size of 0.20 μm or more and less than 5.00 μm, being the ferrite powders for bonded magnet with the ratio of particles having particle size of 1 μm or less being 20 mass % or more in the magnetoplumbite-type ferrite powder size distribution obtained by a laser diffraction type particle size distribution analyzer. | 11-25-2010 |
20100289405 | Light-emitting device and manufacturing method thereof - A light-emitting device of the present invention includes: a light-emitting element; and a phosphor layer containing phosphors that absorb light from the light-emitting element and wavelength-convert the absorbed light to emit light. The phosphor layer has a structure in which the phosphors are disposed on an applied adhesive with a thickness equal to or less than an average particle size of the phosphors. A thickness of the phosphor layer is equal to or less than five times the average particle size of the phosphors, and an occupancy ratio of the phosphors in the phosphor layer is 50% or more. Further, the phosphors disposed on the adhesive has an adjusted particle size. | 11-18-2010 |
20100258766 | Phosphor and manufacturing method for the same, and light source - To provide a phosphor having an emission spectrum with a broad peak in a range from yellow color to red color (580 nm to 680 nm) and an excellent excitation band on the longer wavelength side from near ultraviolet/ultraviolet of excitation light to visible light (250 nm to 550 nm), and having an improved emission intensity. The phosphor is provided, which is given by a general composition formula expressed by MmAaBbOoNn:Z, (wherein element M is more than one kind of element having bivalent valency, element A is more than one kind of element having tervalent valency selected from the group consisting of Al, Ga, In, Tl, Y, Sc, P, As, Sb, and Bi, element B is more than one kind of element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is more than one kind of element selected from rare earth elements or transitional metal elements, satisfying m>0, a>0, b>0 o≧0, and n=2/3m+a+4/3b−2/3o), and further containing boron and/or fluorine. | 10-14-2010 |
20100252785 | ITO POWDER AND METHOD OF PRODUCING THE SAME, COATING MATERIAL FOR TRANSPARENT CONDUCTIVE MATERIAL, AND TRANSPARENT CONDUCTIVE FILM - ITO particles are provided, which are small in variations of particle diameters and used for an ITO coating material capable of forming a transparent conductive film having high transparency and low haze value. Also, ITO coating material is provided, containing such ITO particles, and a transparent conductive film containing such ITO particles. Further, ITO powders are provided, wherein 90% or more of ITO particles constituting the ITO powders have a primary particle diameter of 20 nm or less. | 10-07-2010 |
20100243967 | COMPOSITION CONTAINING FINE SILVER PARTICLES, PRODUCTION METHOD THEREOF, METHOD FOR PRODUCING FINE SILVER PARTICLES, AND PASTE HAVING FINE SILVER PARTICLES - A composition containing fine silver particles which have a uniform particle size, can form a fine drawing pattern, and have a small environmental impact, a method for producing that composition, a method for producing fine silver particles, and a paste having fine silver particles are provided. | 09-30-2010 |
20100230630 | Ferrite Magnetic Powder for Bond Magnet and Manufacturing Method of the Same, and Bond Magnet - To provide ferrite magnetic powders for bond magnet capable of surely suppressing residual hexavalent chrome, being an environmental load substance, having no adverse influence on the magnetic characteristics, which is an obstacle in use, and without damaging productivity and at a low cost. The method includes the steps of obtaining sintered powders by sintering raw material powders; wet-pulverizing the sintered powders; wet-cleaning the sintered powders; and annealing the cleaned sintered powders, wherein in the step of the wet-pulverization and in the step of wet-cleaning, generation of the hexavalent chrome, being an environmental load substance, is suppressed by performing the pulverization and cleaning while maintaining pH of a dispersion solvent at 8.5 or less, at the time of pulverization and cleaning. | 09-16-2010 |
20100171066 | MAGNETIC IRON OXIDE PARTICLE, MAGNETIC MATERIAL, AND RADIO WAVE ABSORBER - Disclosed is a magnetic material having high Hc and High Curie point, which is capable of controlling such magnetic characteristics without requiring rare or expensive raw materials. Specifically disclosed is a magnetic material composed of particles of a magnetic iron oxide which is represented by the following general formula: ε-A | 07-08-2010 |
20100086869 | CARRIER CORE MATERIAL FOR ELECTROPHOTOGRAPHIC DEVELOPER AND METHOD FOR PRODUCING THE SAME, CARRIER FOR ELECTROPHOTOGRAPHIC DEVELOPER, AND ELECTROPHOTOGRAPHIC DEVELOPER - To provide a carrier for two-component electrophotographic developer not only having excellent fluidity but also having proper surface irregularities necessary for imparting electric charge, without generating cracks/chipping of particles even under an influence of stirring stress over a long period of time. A particle surface has raised parts of striped pattern extending almost continuously in a plurality of directions while being superposed on one another, with a surface formed with raised parts of striped pattern occupying 80% or more of the whole surface of a particle. Depths of grooves between the adjacent raised parts are 0.05 μm or more and 0.2 μm or less, average surface roughness Ra is 0.1 μm or more and 0.3 μm or less, roundness is 0.90 or more, and average particle size is 151 μm or more and 100 μm or less, and a carrier core material thus constituted is coated with resin. Thus, the carrier for two-component electrophotographic developer is prepared. | 04-08-2010 |
20100075244 | CARRIER CORE MATERIAL FOR ELECTROPHOTOGRAPHIC DEVELOPER, AND MANUFACTURING METHOD OF THE SAME, CARRIER FOR ELECTROPHOTOGRAPHIC DEVELOPER, AND ELECTROPHOTOGRAPHIC DEVELOPER - To provide a carrier for electrophotographic developer, capable of realizing a high image quality and full colorization and reducing carrier scattering, and a manufacturing method of the same, and an electrophotographic developer containing the carrier. A carrier core material for electrophotographic developer, with a general formula expressed by Mg | 03-25-2010 |
20100035174 | CARRIER CORE MATERIAL FOR ELECTROPHOTOGRAPHIC DEVELOPER AND METHOD FOR PRODUCING THE SAME, CARRIER FOR ELECTROPHOTOGRAPHIC DEVELOPER, AND ELECTROPHOTOGRAPHIC DEVELOPER - To provide a carrier for an electrophotographic developer in which high image quality and full colorization are possible while carrier scattering is reduced, and a method for producing the carrier, and an electrophotographic developer including the carrier. A carrier core material for an electrophotographic developer is produced so that the half-value width B of a peak having a maximum intensity in an XRD pattern satisfies B≦0.160 (degree). A carrier for an electrophotographic developer and an electrophotographic developer are produced from the carrier core material for an electrophotographic developer. | 02-11-2010 |
20100013375 | LIGHT EMITTING DEVICE AND METHOD FOR PRODUCING SAME - A light emitting device | 01-21-2010 |
20100013374 | LIGHT EMITTING DEVICE AND METHOD FOR PRODUCING SAME - A light emitting device | 01-21-2010 |
20100001631 | Phosphor, manufacturing method of phosphor sheet and phosphor, and light emitting device using the phosphor - To provide a phosphor given by a general composition formula expressed by MmAaBbOoNn:Z, (wherein element M is one or more kinds of elements having bivalent valency, element A is one or more kinds of elements having tervalent valency, element B is one or more kinds of elements having tetravalent valency, O is oxygen, N is nitrogen, and element Z is one or more kind of activating agent, satisfying m>0, a>0, b>0, o≧0, and n>0), with a change rate of a ratio of element B atoms to the total numbers of atoms being smaller by 10% or the change rate of oxygen atoms to the total numbers of atoms being smaller by 40% in a range from a particle surface up to depth 2000 nm, having a broad emission spectrum in a range of blue color, having a broad flat excitation band in a range of near ultraviolet/ultraviolet, and having excellent emission efficiency, emission intensity, and luminance. | 01-07-2010 |
20100001234 | Manufacturing method of nitride phosphor or oxynitride phosphor - To reduce impurity contents of carbon and oxygen not contributing to light emission, then suppress deterioration of emission intensity of a phosphor, and improve emission efficiency of this phosphor. Therefore, there is provided a firing method of nitride or oxynitride phosphors, wherein a crucible | 01-07-2010 |
20090288401 | COMPOSITE OXIDE FOR EXHAUST GAS PURIFYING CATALYST AND EXHAUST GAS PURIFYING CATALYST, AND DIESEL EXHAUST GAS PURIFYING FILTER - To provide an oxidation catalyst capable of burning PM of diesel, engine exhausts gas at a low temperature, and hardly subjected to poisoning due to sulfur oxide. A composite oxide contains Ce, Bi, and M (wherein M is one or more elements selected from Mg, Ca, Sr, and Ba) and oxygen, and is manufactured, with a molar ratio of Ce, Bi, M expressed by Ce:Bi:M=(1−x−y):x:y, satisfying 011-26-2009 | |
20090267485 | Phosphor and Manufacturing Method Therefore, and Light Emission Device Using the Phosphor - To provide a phosphor for manufacturing an one chip type LED illumination, etc, by combining a near ultraviolet/ultraviolet LED and a blue LED, and having an excellent emission efficiency including luminance. The phosphor is given as a general composition formula expressed by MmAaBbOoNn:Z, (where element M is one or more kinds of elements having bivalent valency, element A is one or more kinds of elements having tervalent valency, element B is one or more kinds of elements having tetravalent valency, O is oxygen, N is nitrogen, and element Z is one or more kinds of elements acting as an activator.), satisfying a=(1+x)×m, b=(4−x)×m, o=x×m, n=(7−x)×m, 0≦x≦1, wherein when excited by light in a wavelength range from 300 nm to 500 nm, the phosphor has an emission spectrum with a peak wavelength in a range from 500 nm to 620 nm. | 10-29-2009 |
20090261919 | MILLIMETER WAVE BAND NONRECIPROCAL DEVICE - [Problem] When a nonreciprocal device operating at 100 GHz to 300 GHz is to be realized by using a conventional magnetic material of garnet-type ferrite or spinel-type ferrite, a huge permanent magnet is required and, therefore, it is very difficult to achieve a millimeter-wave band nonreciprocal device for practical use. | 10-22-2009 |
20090250684 | LIGHT EMITTING SEMICONDUCTOR - A semiconductor element is disclosed having a layered body of a first conductivity type, a light emitting layer, a layered body of a second conductivity type, a constriction layer having a constriction hole, and a first electrode having a lighting hole, a second electrode positioned such that charge traveling between the first and second electrodes passes through the light emitting layer. The constriction hole area is larger than the lighting hole area, and the lighting hole and the constriction hole expose a part of the layered body of the second conductivity type. A mirror is positioned such that the mirror receives light emitted from the light emitting layer that passes through the layered body of the first conductivity type, and the mirror is constructed to have a high reflection ratio for light having peak wavelengths between 200 nm to 350 nm. | 10-08-2009 |
20090136780 | METHOD OF REDUCING DISLOCATIONS IN GROUP III NITRIDE CRYSTAL, AND SUBSTRATE FOR EPITAXIAL GROWTH - An epitaxial substrate | 05-28-2009 |
20090110857 | OXYGEN ABSORBER FOR BLENDING IN A RESIN AND METHOD OF PRODUCING THE SAME - An oxygen absorber for blending in a resin, comprising a mixed powder containing an iron powder, a metal halide and an alkaline substance, and having a half-peak width on a plane (110) of 0.20°/2θ (Co—Kα) or less as measured by a powder X-ray diffraction method, a specific surface area of 0.5 m | 04-30-2009 |
20090109652 | Phosphor and manufacturing method for the same, and light source - To provide a phosphor having an emission spectrum with a broad peak in a range from yellow color to red color (580 nm to 680 nm) and an excellent excitation band on the longer wavelength side from near ultraviolet/ultraviolet of excitation light to visible light (250 nm to 550 nm), and having an improved emission intensity. The phosphor is provided, which is given by a general composition formula expressed by MmAaBbOoNn:Z, (wherein element M is more than one kind of element having bivalent valency, element A is more than one kind of element having tervalent valency selected from the group consisting of Al, Ga, In, Tl, Y, Sc, P, As, Sb, and Bi, element B is more than one kind of element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is more than one kind of element selected from rare earth elements or transitional metal elements, satisfying m>0, a>0, b>0 o≧0, and n=2/3m+a+4/3b−2/3o), and further containing boron and/or fluorine. | 04-30-2009 |
20090098377 | Si-Doped GaAs Single Crystal Ingot and Process for Producing the Same, and Si-Doped GaAs Single Crystal Wafer Produced From Si-Doped GaAs Single Crystal Ingot - This invention provides an Si doped GaAs single crystal ingot, which has a low crystallinity value as measured in terms of etch pit density (EPD) per unit area and has good crystallinity, and a process for producing the same. An Si-doped GaAs single crystal wafer produced in a latter half part in the growth of the Si doped GaAs single crystal ingot is also provided. A GaAs compound material is synthesized in a separate synthesizing oven (a crucible). An Si dopant is inserted into the compound material to prepare a GaAs compound material with the Si dopant included therein. The position of insertion of the Si dopant is one where, when the GaAs compound material is melted, the temperature is below the average temperature. After a seed crystal is inserted into a crucible for an apparatus for single crystal growth, the GaAs compound material with the Si dopant included therein and a liquid sealing compound are introduced into the crucible. The crucible is set in the apparatus for single crystal growth, where the mixture is heat melted and, while stirring the liquid sealing compound, the melt is solidified by a vertical temperature gradient method and the crystal is grown to prepare an Si doped GaAs single crystal ingot. In this case, an Si doped GaAs single crystal wafer is also produced in the latter half part of the growth of the ingot. | 04-16-2009 |
20090085010 | Phosphor and manufacturing method for the same, and light source - To provide a phosphor having an emission characteristic such that a peak wavelength of light emission is in a range from 580 to 680 nm, and having a high emission intensity, and having a flat excitation band with high efficiency for excitation light in a broad wavelength range from ultraviolet to visible light (wavelength range from 250 nm to 550 nm). For example, Ca | 04-02-2009 |
20090057835 | Group III nitride semiconductor and a manufacturing method thereof - A manufacturing method of a group III nitride semiconductor includes the steps of: depositing a metal layer on an AlN template substrate or an AlN single crystal substrate formed by depositing an AlN single crystal layer with a thickness of not less than 0.1 μm nor more than 10 μm on a substrate made of either one of sapphire, SiC, and Si; forming a metal nitride layer having a plurality of substantially triangular-pyramid-shaped or triangular-trapezoid-shaped microcrystals by performing a heating nitridation process on the metal layer under a mixed gas atmosphere of ammonia; and depositing a group III nitride semiconductor layer on the metal nitride layer. | 03-05-2009 |
20090026915 | Phosphor, Phosphor Sheet, and Manufacturing Method Therefore, and Light Emission Device Using the Phosphor - To provide a phosphor having a broad emission spectrum in a range of blue color (in a peak wavelength range from 400 nm to 500 nm), having a broad flat excitation band in a near ultraviolet/ultraviolet range, and having excellent emission efficiency and emission intensity/luminance. The phosphor is given as a general composition formula expressed by MmAaBbOoNn:Z, (where element M is the element having bivalent valency, element A is the element having tervalent valency, element B is the element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is more than one kind of element acting as an activator), satisfying 5.0<(a+b)/m<9.0, 0≦a/m≦2.0, 0≦o≦n, n=2/3m+a+4/3b−2/3o, and has an emission spectrum with a maximum peak in the wavelength range from 400 nm to 500 nm under an excitation of the light in a wavelength range from 250 nm to 430 nm. | 01-29-2009 |
20080303412 | Light source having phosphor including divalent, trivalent and tetravalent elements - A phosphor having an excitation band relative to lights in the wide range of wavelengths from ultraviolet to visible light, and having an emission spectrum in the red range and so on, with a wide half value width, and an LED and a light source using the phosphor and emitting white and other color lights with good color rendering properties are provided. Powdered raw materials of Ca | 12-11-2008 |
20080205013 | SOLDER LAYER AND DEVICE BONDING SUBSTRATE USING THE SAME AND METHOD FOR MANUFACTURING SUCH A SUBSTRATE - A solder layer and an electronic device bonding substrate having high bonding strength of a device and low bonding failure even by a simplified bonding method of a device to a substrate and a method for manufacturing the same are provided. | 08-28-2008 |