CHIPMOS TECHNOLOGIES (BERMUDA) LTD. Patent applications |
Patent application number | Title | Published |
20110300705 | MANUFACTURING METHOD OF BUMP STRUCTURE WITH ANNULAR SUPPORT - A manufacturing method of a bump structure with an annular support includes the following steps. A substrate including pads and a passivation layer is provided. The passivation has first openings exposing a portion of the pads. An UBM material layer is formed to cover the passivation layer and the pads. A patterned photoresist layer, having second openings respectively exposing the UBM material layer over the pads, is formed on the UBM material layer. A diameter of each second opening located on a lower surface of the patterned photoresist layer is less than that located on an upper surface of the patterned photoresist layer. Bumps are formed in the second openings. A portion of the patterned photoresist layer is removed to form an annular support at a periphery of each bump. The UBM material layer is patterned using the annular supports and the bumps as masks to form UBM layers. | 12-08-2011 |
20100244278 | STACKED MULTICHIP PACKAGE - A stacked multichip package comprises a first chip having a first active surface and a first rear surface, a first chip carrier having a first opening and being configured to carrier the first active surface, a plurality of first conductive leads passing through the first opening and being configured to electrically connect the first active surface and the first chip carrier, a second chip having a second active surface and a second rear surface, an adhesive layer configured to enclose the first conductive leads and to electrically couple the first chip carrier to the second rear surface, a second chip carrier having a second opening and being electrically connected to the second active surface, and a plurality of conductive leads passing through the second opening and being configured to electrically connect the second active surface and the second chip carrier. | 09-30-2010 |
20100187692 | CHIP PACKAGE WITHOUT CORE AND STACKED CHIP PACKAGE STRUCTURE - A chip package including a base, a chip, a molding compound and a plurality of outer terminals is provided. The base is essentially consisted of a patterned circuit layer having a first surface and a second surface opposite to each other and a solder mask disposed on the second surface, wherein the solder mask has a plurality of first openings by which part of the patterned circuit layer is exposed. The chip is disposed on the first surface and is electrically connected to the patterned circuit layer. The molding compound covers the pattern circuit layer and fixes the chip onto the patterned circuit layer. The outer terminals are disposed in the first openings and electrically connected to the patterned circuit layer. | 07-29-2010 |
20100187691 | CHIP PACKAGE WITHOUT CORE AND STACKED CHIP PACKAGE STRUCTURE - A chip package including a base, a chip, a molding compound and a plurality of outer terminals is provided. The base is essentially consisted of a patterned circuit layer having a first surface and a second surface opposite to each other and a solder mask disposed on the second surface, wherein the solder mask has a plurality of first openings by which part of the patterned circuit layer is exposed. The chip is disposed on the first surface and is electrically connected to the patterned circuit layer. The molding compound covers the pattern circuit layer and fixes the chip onto the patterned circuit layer. The outer terminals are disposed in the first openings and electrically connected to the patterned circuit layer. | 07-29-2010 |
20100151624 | FABRICATING PROCESS OF A CHIP PACKAGE STRUCTURE - A fabricating process of a chip package structure is provided. First, a first substrate having a plurality of first bonding pads and a second substrate having a plurality of second bonding pads are provided, wherein bumps are formed on the first bonding pads of the first substrate. A first two-stage adhesive layer is formed on the first substrate and is B-stagized to form a first B-staged adhesive layer. A second two-stage adhesive layer is formed on the second substrate and is B-stagized to form a second B-staged adhesive layer. Then, the first substrate and the second substrate are bonded via the first and second B-staged adhesive layer such that the bumps pierce through the second B-staged adhesive layer and are electrically connected to the second bonding pads, wherein each of the first bonding pads is respectively electrically connected to one of the second bonding pads via one of the bumps. | 06-17-2010 |
20100127367 | CHIP PACKAGE AND MANUFACTURING METHOD THEREOF - A chip package including a circuit substrate, a chip, a B-staged adhesive layer, a leadframe, a number of first bonding wires, a number of second bonding wires, and a number of third bonding wires. The chip is disposed on the circuit substrate. The B-staged adhesive layer is disposed on the circuit substrate. The leadframe is disposed on the circuit substrate and includes a number of leads. Portions of the leads are embedded in the B-staged adhesive layer, and an end of each of the leads is exposed by the B-staged adhesive layer. The first bonding wires are electrically connected between the chip and the circuit substrate. The second bonding wires are electrically connected between the chip and the leads. The third bonding wires are electrically connected between the leads and the circuit substrate. In addition, a manufacturing method of a chip package is also provided. | 05-27-2010 |
20100123234 | MULTI-CHIP PACKAGE AND MANUFACTURING METHOD THEREOF - A multi-chip package includes a carrier, a first chip, a relay circuit substrate, a number of first bonding wires, a number of second bonding wires, a second chip, a number of third bonding wires, and an adhesive layer. The first chip is disposed on the carrier. The relay circuit substrate is disposed on the first chip. The first bonding wires are electrically connected between the first chip and the relay circuit substrate. The second bonding wires are electrically connected between the relay circuit substrate and the carrier. The second chip is disposed on the carrier and is stacked with the first chip. The third bonding wires are electrically connected between the second chip and the carrier. The adhesive layer is adhered between the first chip and the second chip. In addition, a manufacturing method of a multi-chip package is also provided. | 05-20-2010 |
20090280603 | METHOD OF FABRICATING CHIP PACKAGE - A method of fabricating a chip package is provided. A thin metal plate having a first protrusion part, a second protrusion part and a plurality of third protrusion parts are provided. A chip is disposed on the thin metal plate, and a plurality of bonding wires for electrically connecting the chip to the second protrusion part and the second protrusion part to the third protrusion parts is formed. An upper encapsulant and a lower encapsulant are formed on the upper surface and the lower surface of the thin metal plate respectively. The lower encapsulant has a plurality of recesses for exposing a portion of the thin metal plate at locations where the first protrusion part, the second protrusion part and the third protrusion parts are connected to one another. Finally, the thin metal plate is etched by using the lower encapsulant as an etching mask. | 11-12-2009 |
20090243056 | CHIP PACKAGE HAVING ASYMMETRIC MOLDING - A chip package having asymmetric molding includes a lead frame, a chip, an adhesive layer, bonding wires and a molding compound. The lead frame includes a turbulent plate and a frame body having inner lead portions and outer lead portions. The turbulent plate is bended downwards to form a concave portion. The first end of the turbulent plate is connected to the frame body, and the second end is lower than the inner lead portions. The chip is fixed under the inner lead portions through the adhesive layer. The bonding wires are connected between the chip and the inner lead portions. The molding compound encapsulates the chip, the bonding wires, and the turbulent plate. The ratio between the thickness of the molding compound over and under the concave portion is larger than 1. The thickness of the molding compound under and over the outer lead portions is not equal. | 10-01-2009 |
20090206476 | CONDUCTIVE STRUCTURE FOR A SEMICONDUCTOR INTEGRATED CIRCUIT - A conductive structure for a semiconductor integrated circuit is provided. The semiconductor integrated circuit comprises a pad, and a passivation layer partially overlapping the pad, which jointly define an opening portion. The conductive structure is adapted to be electrically connected to the pad through the opening portion. The conductive structure comprises an under bump metal (UBM). A first conductor layer formed on the under bump metal is electrically connected to the under bump metal. A second conductor layer formed on the first conductor layer and electrically connected to the first conductor layer and a cover conductor layer. Furthermore, the under bump metal, the first conductor layer, and the second conductor jointly define a basic bump structure. The cover conductor layer is adapted to cover the basic bump structure. | 08-20-2009 |
20090197374 | METHOD OF FABRICATING CHIP PACKAGE STRUCTURE - A chip package structure includes a chip, a lead frame, first and second bonding wires, an upper encapsulant, a first lower encapsulant, and a second lower encapsulant. The chip has an active surface, a back surface, and chip bonding pads disposed on the active surface. The lead frame having an upper surface and a lower surface includes a die pad, leads, and at least a bus bar. The back surface of the chip is adhered to the die pad. The leads surround the die pad. The bus bar is disposed between the die pad and the leads. The first bonding wires are connected to the chip bonding pads and the bus bar. The second bonding wires are connected to the bus bar and the leads. The upper encapsulant encapsulates the upper surface of the lead frame, the chip, the first bonding wires, and the second bonding wires. | 08-06-2009 |
20090146278 | Chip-stacked package structure with asymmetrical leadframe - The present invention provides a chip-stacked package structure, comprising: a lead-frame, composed of a plurality of inner leads and a plurality of outer leads, wherein the inner leads comprise a plurality of first inner leads in parallel and a plurality of second inner leads in parallel, and the ends of the first inner leads and the second inner leads are arranged opposite each other at a distance. The first inner leads is provided with a down-set structure, which results in different vertical heights of the position of the end of first inner leads and the position of the end of second inner leads. A chip-stacked package structure is then fixedly connected to the first inner leads, and the metallic bonding pads on the same side edge are electrically connected to the first inner leads and the second inner leads through a plurality of metal wires; and an encapsulant with a top surface and a bottom surface is provided to cover the chip-stacked package structure and the inner leads. | 06-11-2009 |
20090130839 | MANUFACTURING METHOD OF REDISTRIBUTION CIRCUIT STRUCTURE - A method of manufacturing a redistribution circuit structure is provided. First, a substrate is provided. The substrate has a plurality of pads and a passivation layer. The passivation layer has a plurality of first openings exposing a portion of each of the pads, respectively. A first patterned photoresist layer is formed on the passivation layer. The first patterned photoresist layer has a plurality of second openings exposing a portion of each of the pads. A plurality of first bumps is formed in the second openings, respectively. An under ball metal (UBM) material layer is formed over the substrate to cover the first patterned photoresist layer and the first bumps. A plurality of conductive lines is formed on the UBM material layer. The UBM material layer is patterned to form a plurality of UBM layers using the conductive lines as a mask. | 05-21-2009 |
20090068799 | MANUFACTURING PROCESS FOR A QUAD FLAT NON-LEADED CHIP PACKAGE STRUCTURE - A manufacturing process for a Quad Flat Non-leaded (QFN) chip package structure is provided. First, a conductive layer having a plurality of recesses and a patterned solder resist layer on the conductive layer are provided, wherein the patterned solder resist layer covers the recesses of the conductive layer. A plurality of chips are bonded onto the patterned solder resist layer such that the patterned solder resist layer is between the chips and the conductive layer. The chips are electrically connected to the conductive layer by a plurality of bonding wires. At least one molding compound is formed to encapsulate the conductive layer, the patterned solder resist layer, the chips and the bonding wires. A part of the conductive layer exposed by the patterned solder resist layer is removed so as to form a patterned conductive layer. Then, the molding compound and the patterned conductive layer are separated. | 03-12-2009 |
20090068797 | MANUFACTURING PROCESS FOR A QUAD FLAT NON-LEADED CHIP PACKAGE STRUCTURE - A manufacturing process for a Quad Flat Non-leaded (QFN) chip package structure is provided. First, a conductive layer having a plurality of recesses and a patterned solder resist layer on the conductive layer are provided, wherein the patterned solder resist layer covers the recesses of the conductive layer. A plurality of chips are bonded onto the patterned solder resist layer such that the patterned solder resist layer is between the chips and the conductive layer. The chips are electrically connected to the conductive layer by a plurality of bonding wires. At least one molding compound is formed to encapsulate the conductive layer, the patterned solder resist layer, the chips and the bonding wires. A part of the conductive layer uncovered by the patterned solder resist layer is removed so as to form a patterned conductive layer. Then, the molding compound and the patterned conductive layer are separated. | 03-12-2009 |
20090068794 | MANUFACTURING PROCESS FOR A QUAD FLAT NON-LEADED CHIP PACKAGE STRUCTURE - A manufacturing process for a Quad Flat Non-leaded (QFN) chip package structure is provided. First, a conductive layer having recesses and a patterned solder resist layer on the conductive layer are provided, wherein the patterned solder resist layer covers the recesses of the conductive layer. A part of the conductive layer uncovered by the patterned solder resist layer is removed so as to form a patterned conductive layer. Chips are bonded onto the patterned conductive layer such that the patterned solder resist layer and the chips are at the same side of the patterned conductive layer. The chips are electrically connected to the patterned conductive layer by bonding wires, wherein the chips and the bonding wires are at the same side of the patterned conductive layer. At least one molding compound is formed and the molding compound and the patterned conductive layer are separated. | 03-12-2009 |
20090068793 | MANUFACTURING PROCESS FOR A CHIP PACKAGE STRUCTURE - A manufacturing process for a chip package structure is provided. First, a patterned conductive layer having a plurality of first openings and a first patterned solder resist layer on the patterned conductive layer are provided. A second patterned solder resist layer is formed on the patterned conductive layer such that the first patterned solder resist layer and the second patterned solder resist layer are disposed at two opposite surfaces of the patterned conductive layer. Chips are bonded onto the first patterned solder resist layer such that the first patterned solder resist layer is between the chips and the patterned conductive layer. The chips are electrically connected to the patterned conductive layer by a plurality of bonding wires passing through the first openings. At least one molding compound is formed and the molding compound, the first patterned solder resist layer and the second patterned solder resist layer are separated. | 03-12-2009 |
20090068792 | MANUFACTURING PROCESS FOR A CHIP PACKAGE STRUCTURE - A manufacturing process for a chip package structure is provided. First, a patterned conductive layer having a plurality of first openings and a patterned solder resist layer on the patterned conductive layer are provided. A plurality of chips are bonded onto the patterned conductive layer such that the chips and the patterned solder resist layer are disposed at two opposite surfaces of the patterned conductive layer. The chips are electrically connected to the patterned conductive layer by a plurality of bonding wires passing through the first openings of the patterned conductive layer. At least one molding compound is formed to encapsulate the patterned conductive layer, the patterned solder resist layer, the chips and the bonding wires. Then, the molding compound, the patterned conductive layer and the patterned solder resist layer are separated. | 03-12-2009 |
20090068789 | MANUFACTURING PROCESS FOR A CHIP PACKAGE STRUCTURE - A manufacturing process for a chip package structure is provided. First, a patterned conductive layer and a patterned solder resist layer on the patterned conductive layer are provided. A plurality of chips are bonded onto the patterned conductive layer such that the chips and the patterned solder resist layer are disposed at two opposite surfaces of the patterned conductive layer. The chips are electrically connected to the patterned conductive layer by a plurality of bonding wires, wherein the chips and the bonding wires are at the same side of the patterned conductive layer. A molding compound is formed to encapsulate the patterned conductive layer, the chips and the bonding wires. Then, the molding compound, the patterned conductive layer and the patterned solder resist layer are separated. | 03-12-2009 |
20090065913 | CHIP PACKAGE WITH ASYMMETRIC MOLDING - A chip package with asymmetric molding including a lead frame, a chip, an adhesive layer, bonding wires and an encapsulant, is provided. The lead frame includes a frame body and at least a turbulent plate. The frame body has inner lead portions and outer lead portions. The turbulent plate is bended upwards to form a bulge portion and the first end of the turbulent plate is connected to the frame body. The chip is fixed under the inner lead portions and the turbulent plate is located at one side of the chip. The adhesive layer is disposed between the chip and the inner lead portions, and the bonding wires are electrically connected between the chip and the corresponding inner lead portions, respectively. The encapsulant encapsulates at least the chip, the bonding wires, the inner lead portions, the adhesive layer and the turbulent plate. | 03-12-2009 |
20090064494 | MANUFACTURING PROCESS FOR A QUAD FLAT NON-LEADED CHIP PACKAGE STRUCTURE - A manufacturing process for a Quad Flat Non-leaded (QFN) chip package structure is provided. First, a patterned conductive layer and a patterned solder resist layer on the patterned conductive layer are provided. A plurality of chips are bonded onto the patterned solder resist layer such that the patterned solder resist layer are between the chips and the patterned conductive layer. The chips are electrically connected to the patterned conductive layer by a plurality of bonding wires, wherein the chips and the bonding wires are at the same side of the patterned conductive layer. At least one molding compound is formed to encapsulate the patterned conductive layer, the patterned solder resist layer, the chips and the bonding wires. Then, the molding compound, the patterned conductive layer and the patterned solder resist layer are separated. | 03-12-2009 |
20090047754 | PACKAGING METHOD INVOLVING REARRANGEMENT OF DICE - A packaging method is disclosed that comprises attaching a plurality of dice, each having a plurality of bonding pads disposed on an active surface, to an adhesive layer on a substrate. A polymer material is formed over at least a portion of both the substrate and the plurality of dice and a molding apparatus is used on the substrate to force the polymer material to substantially fill around the plurality of dice. The molding apparatus is removed to expose a surface of the polymer material and a plurality of cutting streets is formed on an exposed surface of the polymer material. The substrate is removed to expose the active surface of the plurality of dice | 02-19-2009 |
20090026632 | CHIP-TO-CHIP PACKAGE AND PROCESS THEREOF - A wafer treating method for making adhesive chips is provided. A liquid adhesive with two-stage property is coated on a surface of a wafer. Then, the wafer is pre-cured to make the liquid adhesive transform an adhesive film having B-stage property which has a glass transition temperature between −40 and 175 degree C., for example. After positioning the wafer, the wafer is singulated to form a plurality of chips with adhesive for chip-to-chip stacking, chip-to-substrate or chip-to-lead frame attaching. | 01-29-2009 |
20080315439 | QUAD FLAT NON-LEADED CHIP PACKAGE - A Quad Flat Non-leaded (QFN) chip package including a patterned conductive layer, a first solder resist layer, a chip, a plurality of bonding wires and a molding compound is provided. The patterned conductive layer has a first surface and a second surface opposite to each other. The first solder resist layer is disposed on the first surface, wherein a part of the first surface is exposed by the first solder resist layer. The chip is disposed on the first solder resist layer, wherein the first solder resist layer is between the patterned conductive layer and the chip. The bonding wires are electrically connected to the chip and the patterned conductive layer exposed by the first solder resist layer. The molding compound encapsulates the pattern conductive layer, the first solder resist layer, the chip and the bonding wires. | 12-25-2008 |
20080315417 | CHIP PACKAGE - A chip package includes a patterned conductive layer, a first solder resist layer, a second solder resist layer, a chip, bonding wires and a molding compound. The patterned conductive layer has a first surface and a second surface opposite to each other. The first solder resist layer is disposed on the first surface. The second solder resist layer is disposed on the second surface, wherein a part of the second surface is exposed by the second solder resist layer. The chip is disposed on the first solder resist layer, wherein the first solder resist layer is disposed between the patterned conductive layer and the chip. The bonding wires are electrically connected to the chip and the patterned conductive layer exposed by the second solder resist layer. The molding compound encapsulates the pattern conductive layer, the first solder resist layer, the second solder resist layer, the chip and the bonding wires. | 12-25-2008 |
20080308916 | CHIP PACKAGE - A chip package including a carrier having an opening, a first chip, bumps, a second chip, bonding wires, a first adhesive layer and a molding compound is provided. The first chip and the second chip are disposed at two opposite side of the carrier. The bumps are disposed between the carrier and a first active surface of the first chip to electrically connect with the first chip and the carrier. The bonding wires pass through the opening of the carrier and are electrically connected with the carrier and the second chip. The first adhesive layer adhered between the first active surface of the first chip and the carrier includes a first B-staged adhesive layer adhered on the first active surface of the first chip and a second B-staged adhesive layer adhered between the first B-staged adhesive layer and the carrier. | 12-18-2008 |
20080308915 | CHIP PACKAGE - A chip package including a circuit substrate, a first chip, first bonding wires, a component, a first adhesive layer and a molding compound is provided. The first chip has a first active surface, a first rear surface and first bonding pads, the first rear surface is adhered on the circuit substrate and the first chip is electrically connected with the circuit substrate. The first bonding wires are electrically connected with the circuit substrate and the first bonding pads of the first chip. The component is disposed over the first active surface of the first chip. The first adhesive layer adhered between the first active surface and the component without covering the first bonding pads and includes a first B-staged adhesive layer adhered on a portion of the first active surface of the first chip and a second B-staged adhesive layer adhered between the first B-staged adhesive layer and the component. | 12-18-2008 |
20080308914 | CHIP PACKAGE - A chip package including a circuit substrate having an opening, a first chip, first bonding wires, a component, a first adhesive layer and a molding compound is provided. The first chip has a first active surface and a first rear surface opposite to the first active surface, the first chip is flipped on and electrically connected with the circuit substrate. The first bonding wires are electrically connected with the circuit substrate and the first chip, and each first bonding wire passes through the opening. The component is disposed over the first rear surface. The first adhesive layer adhered between the first rear surface and the component includes a first B-staged adhesive layer adhered on the first rear surface and the component and a second B-staged adhesive layer adhered between the first B-staged adhesive layer and the component. The molding compound is disposed on the circuit substrate. | 12-18-2008 |
20080303174 | CHIP PACKAGE WITHOUT CORE AND STACKED CHIP PACKAGE STRUCTURE - A chip package including a base, a chip, a molding compound and a plurality of outer terminals is provided. The base is essentially consisted of a patterned circuit layer having a first surface and a second surface opposite to each other and a solder mask disposed on the second surface, wherein the solder mask has a plurality of first openings by which part of the patterned circuit layer is exposed. The chip is disposed on the first surface and is electrically connected to the patterned circuit layer. The molding compound covers the pattern circuit layer and fixes the chip onto the patterned circuit layer. The outer terminals are disposed in the first openings and electrically connected to the patterned circuit layer. | 12-11-2008 |
20080268572 | CHIP PACKAGE - A fabricating process of chip package structure is provided. First, a first substrate having a plurality of first bonding pads and a second substrate having a plurality of second bonding pads are provide, wherein a plurality of bumps are formed on the first bonding pads of the first substrate. A first two-stage adhesive layer is formed on the first substrate or on the second substrate and is B-stagized to form a first B-staged adhesive layer. A second two-stage adhesive layer is formed on the first B-staged adhesive layer and is B-stagized to form a second B-staged adhesive layer. Then, the first substrate and the second substrate are bonded via the first B-staged adhesive layer and the second B-staged adhesive layer such that each of the first bonding pads is respectively electrically connected to one of the second bonding pads via one of the bumps. | 10-30-2008 |
20080268570 | FABRICATING PROCESS OF A CHIP PACKAGE STRUCTURE - A fabricating process of a chip package structure is provided. First, a first substrate having a plurality of first bonding pads and a second substrate having a plurality of second bonding pads are provide, wherein a plurality of bumps are formed on the first bonding pads of the first substrate. A first two-stage adhesive layer is formed on the first substrate and is B-stagized to form a first B-staged adhesive layer. A second two-stage adhesive layer is formed on the second substrate and is B-stagized to form a second B-staged adhesive layer. Then, the first substrate and the second substrate are bonded via the first B-staged adhesive layer and the second B-staged adhesive layer such that each of the first bonding pads is respectively electrically connected to one of the second bonding pads via one of the bumps. | 10-30-2008 |
20080251948 | CHIP PACKAGE STRUCTURE - A chip package structure including a first substrate, a second substrate, a plurality of bumps, a first B-staged adhesive layer and a second B-staged adhesive layer is provided. The first substrate has a plurality of first bonding pads. The second substrate has a plurality of second bonding pads, and the second substrate is disposed above the first substrate. The bumps are disposed between the first substrate and the second substrate, wherein each of the first bonding pads is respectively electrically connected to one of the second bonding pads via one of the bumps. The first B-staged adhesive layer is adhered on the first substrate. The second B-staged adhesive layer is adhered between the first B-staged adhesive layer and the second substrate, wherein the first B-staged adhesive layer and the second B-staged adhesive layer encapsulate the bumps. | 10-16-2008 |
20080224284 | CHIP PACKAGE STRUCTURE - A chip package structure mainly including a substrate, a chip and a lead frame is provided. The chip is disposed on the substrate, and is electrically connected to the chip by flip-chip or wire-bonding technique. The chip is electrically connected to the lead frame through a redistribution layer on the substrate. Therefore, a problem that the bonding wires may collapse due to a longer distance between the chip and the lead frame may be resolved, thus improving the yield rate thereof. | 09-18-2008 |
20080224277 | CHIP PACKAGE AND METHOD OF FABRICATING THE SAME - A method of fabricating a chip package is provided. A thin metal plate having a first protrusion part, a second protrusion part and a plurality of third protrusion parts are provided. A chip is disposed on the thin metal plate, and a plurality of bonding wires for electrically connecting the chip to the second protrusion part and the second protrusion part to the third protrusion parts is formed. An upper encapsulant and a lower encapsulant are formed on the upper surface and the lower surface of the thin metal plate respectively. The lower encapsulant has a plurality of recesses for exposing a portion of the thin metal plate at locations where the first protrusion part, the second protrusion part and the third protrusion parts are connected to one another. Finally, the thin metal plate is etched by using the lower encapsulant as an etching mask. | 09-18-2008 |