Central Research Institute of Electric Power Industry Patent applications |
Patent application number | Title | Published |
20150376813 | METHOD FOR PRODUCING HEXAGONAL SINGLE CRYSTAL, METHOD FOR PRODUCING HEXAGONAL SINGLE CRYSTAL WAFER, HEXAGONAL SINGLE CRYSTAL WAFER, AND HEXAGONAL SINGLE CRYSTAL ELEMENT - When growing a hexagonal single crystal, an off angle is set, in a first direction [11-20] with respect to a basal plane {0001} serving as a main crystal growth plane, in a hexagonal single crystal for use as a foundation in performing crystal growth; and a cross-sectional shape which is decreased in crystal thickness in a stair-step manner from a reference line AA′ parallel to the first direction [11-20] toward second directions [−1100], [1-100] on both sides of the reference line and orthogonal to the first direction [11-20]. Dislocations threading in a c-axis direction, contained in the hexagonal single crystal, are converted into defects inclined ≧40° from the c-axis direction toward the basal plane during crystal growth, and the direction of propagation of the defects is controlled to a direction between a direction [−1-120] opposite to the first direction [11-20] and the second directions [−1100], [1-100], to discharge defects. | 12-31-2015 |
20130259740 | SYSTEM FOR TREATING SELENIUM-CONTAINING LIQUID, WET FLUE GAS DESULFURIZATION DEVICE, AND METHOD FOR TREATING SELENIUM-CONTAINING LIQUID - A system for treating a selenium-containing liquid, a wet flue gas desulfurization device, and a method for treating a selenium-containing liquid treat a selenium-containing liquid by adding bivalent manganese to the selenium-containing liquid, thereby suppressing oxidation of tetravalent selenium to hexavalent selenium. The system includes: a potential measurement unit for measuring an oxidation-reduction potential of the selenium-containing liquid, and a pH measurement unit for measuring a pH value of the selenium-containing liquid; a detection unit for detecting whether or not the selenium-containing liquid is in a state where selenium stabilizes at a valence of 4 or higher, based on the measured oxidation-reduction potential and the measured pH value; and an addition unit for adding bivalent manganese into the selenium-containing liquid when the selenium-containing liquid is in a state where selenium stabilizes at a valence of 4 or higher. | 10-03-2013 |
20130224621 | MOLTEN CARBONATE FUEL CELL - A molten carbonate fuel cell, which makes a separator unnecessary, cuts down the number of components, and markedly reduces the costs, is provided. In the cell, a cathode, an electrolyte plate holding an electrolyte, and an anode are provided concentrically with a tube body, the electrolyte plate is held by the anode, and the electrolyte plate is sandwiched between the anode and the cathode, so that the cell is constructed without the use of a separator. | 08-29-2013 |
20130152853 | FILM-FORMING APPARATUS AND FILM-FORMING METHOD - A film-forming apparatus | 06-20-2013 |
20130009170 | EPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURE OF EPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE - An epitaxial SiC single crystal substrate including a SiC single crystal wafer whose main surface is a c-plane or a surface that inclines a c-plane with an angle of inclination that is more than 0 degree but less than 10 degrees, and SiC epitaxial film that is formed on the main surface of the SiC single crystal wafer, wherein the dislocation array density of threading edge dislocation arrays that are formed in the SiC epitaxial film is 10 arrays/cm | 01-10-2013 |
20130004373 | SYSTEM FOR TREATING SELENIUM-CONTAINING LIQUID, WET FLUE GAS DESULFURIZATION DEVICE, AND METHOD FOR TREATING SELENIUM-CONTAINING LIQUID - A system for treating a selenium-containing liquid includes a concentration measurement element | 01-03-2013 |
20120261262 | Purifying Apparatus and Purifying Method - A vessel in which an electroconductive liquid including impurities is stored has an electromagnetic force generation device which produces an electromagnetic force that circulates the electroconductive liquid in the electroconductive liquid, and a discharge device which discharges a non-metallic impurity and a deemed non-metallic impurity and collected in a low-pressure portion based on a pressure difference in the electroconductive liquid produced by the electromagnetic force. The non-metallic impurity and the deemed non-metallic impurity are collected in the low-pressure portion, e.g., a liquid level to be separated by the electromagnetic force. | 10-18-2012 |
20100267568 | Superconducting film and method of manufacturing the same - The present invention relates to a superconducting film having a substrate and a superconductor layer formed on the substrate, in which nano grooves are formed parallel to a current flowing direction on a substrate surface on which the superconductor layer is formed and two-dimensional crystal defects are introduced in the superconductor layer on the nano grooves, and a method of manufacturing this superconducting film. A superconducting film of the invention, which is obtained at low cost and has very high Jc, is useful in applications such as cables, magnets, shields, current limiters, microwave devices, and semifinished products of these articles. | 10-21-2010 |
20100261333 | Silicon carbide semiconductor device and manufacturing method therefor - With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer, a drift layer and other p-type and n-type semiconductor layers are formed on a growth surface, which is given by a surface of a crystal of a silicon carbide semiconductor having an off-angle θ of 8 degrees from a (000-1) carbon surface of the crystal, at a film growth rate having a film-thickness increasing rate per hour h of 10 μm/h, which is three times or more higher than conventional counterparts. The flow rate of silane and propane material gases and dopant gases is largely increased to enhance the film growth rate. | 10-14-2010 |
20100258817 | Silicon carbide semiconductor device and manufacturing method therefor - With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer, a drift layer and other p-type and n-type semiconductor layers are formed on a growth surface, which is given by a surface of a crystal of a silicon carbide semiconductor having an off-angle θ of 8 degrees from a (000-1) carbon surface of the crystal, at a film growth rate having a film-thickness increasing rate per hour h of 10 μm/h, which is three times or more higher than conventional counterparts. The flow rate of silane and propane material gases and dopant gases is largely increased to enhance the film growth rate. | 10-14-2010 |
20100258816 | Silicon carbide semiconductor device and manufacturing method therefor - With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer, a drift layer and other p-type and n-type semiconductor layers are formed on a growth surface, which is given by a surface of a crystal of a silicon carbide semiconductor having an off-angle θ of 8 degrees from a (000-1) carbon surface of the crystal, at a film growth rate having a film-thickness increasing rate per hour h of 10 μm/h, which is three times or more higher than conventional counterparts. The flow rate of silane and propane material gases and dopant gases is largely increased to enhance the film growth rate. | 10-14-2010 |
20100173475 | Method for Improving the Quality of a SiC Crystal - A method for improving the quality of a SiC layer by effectively reducing or eliminating the carrier trapping centers in the as-grown SiC crystal. The method includes the steps of: (a) carrying out ion implantation of carbon atoms, silicon atoms, hydrogen atoms, or helium atoms into a shallow surface layer of the SiC crystal layer to introduce carbon interstitials into the surface layer, and (b) growing the SiC layer upward from the edge face of the surface layer into which the carbon interstitials have been introduced, and diffusing out the carbon interstitials that have been introduced into the surface layer from the surface layer into the grown layer and combining the carbon interstitials and point defects to make the electrically active point defects in the grown layer inactive. | 07-08-2010 |
20100051913 | Organic field-effect transistor, production method and intermediate structure therefor, and organic field-effect device - An organic field-effect transistor normally includes: a source electrode and a drain electrode; an organic semiconductor layer in contact with the source electrode and the drain electrode; a gate insulating layer adjacent to the organic semiconductor layer; and a gate electrode in contact with the gate insulating layer. The gate insulating layer according to the present invention is in a liquid state, constituted with a material containing no glue or thickener, a sole or main component of which is an ionic liquid. Thus the capacitance of the ionic liquid corresponding to a gate voltage modulation frequency of 10 Hz is reduced to 1/10 at a frequency of 10 kHz of higher. As a result, an organic field-effect transistor capable of operating at low voltage and assuring ample current gain and high-speed response (the capacitance of the ionic liquid corresponding to a gate voltage modulation frequency of 10 Hz is reduced to 1/10 at a frequency of 10 kHz of higher) is provided. | 03-04-2010 |
20100032686 | Bipolar Semiconductor Device, Method for Producing the Same, and Method for Controlling Zener Voltage - Bipolar semiconductor devices have a Zener voltage controlled very precisely in a wide range of Zener voltages (for example, from 10 to 500 V). A bipolar semiconductor device has a mesa structure and includes a silicon carbide single crystal substrate of a first conductivity type, a silicon carbide conductive layer of a first conductivity type, a highly doped layer of a second conductivity type and a silicon carbide conductive layer of a second conductivity type which substrate and conductive layers are laminated in the order named. | 02-11-2010 |
20100015486 | POWER GENERATING PLANT - Coal is reacted in a furnace | 01-21-2010 |
20090317983 | Process for Producing Silicon Carbide Semiconductor Device - In a bipolar silicon carbide semiconductor device in which an electron and a hole recombine with each other during current passage within a silicon carbide epitaxial film grown from a surface of a silicon carbide single crystal substrate, an object described herein is the reduction of defects which are the nuclei of a stacking fault which is expanded by current passage, thereby suppressing the increase of the forward voltage of the bipolar silicon carbide semiconductor device. In a method for producing a bipolar silicon carbide semiconductor device, the device is subjected to a thermal treatment at a temperature of 300° C. or higher in the final step of production. Preferably, the above-mentioned thermal treatment is carried out after the formation of electrodes and then the resulting bipolar silicon carbide semiconductor device is mounted in a package. | 12-24-2009 |
20090304563 | Mercury removal system and method - The present invention provides a mercury removal system and method for effectively removing a mercury component, which is present in a gas stream in an extremely small amount in wet gas cleaning used for coal or heavy oil gasification, petroleum refining and the like. The mercury removal system in wet gas cleaning comprises a water washing tower for introducing therein a target gas containing a mercury component and transferring the mercury component into an absorbing solution, a flush drum ( | 12-10-2009 |
20090243026 | Schottky Barrier Diode and Method for Using the Same - An intermediate metal film is formed between a Schottky electrode and a pad electrode. A Schottky barrier height between the intermediate metal film and a silicon carbide epitaxial film is equivalent to or higher than a Schottky barrier height between the Schottky electrode and the silicon carbide epitaxial film. By this configuration, an excess current and a leak current through a pin-hole can be suppressed even in the case in which a Schottky barrier height between the pad electrode and the silicon carbide epitaxial film is less than the Schottky barrier height between the Schottky electrode and the silicon carbide epitaxial film. | 10-01-2009 |
20090195296 | Method for Recovering an On-State Forward Voltage and, Shrinking Stacking Faults in Bipolar Semiconductor Devices, and the Bipolar Semiconductor Devices - In a bipolar semiconductor device such that electrons and holes are recombined in a silicon carbide epitaxial film grown from the surface of a silicon carbide single crystal substrate at the time of on-state forward bias operation; an on-state forward voltage increased in a silicon carbide bipolar semiconductor device is recovered by shrinking the stacking fault area enlarged by on-state forward bias operation. In a method of this invention, the bipolar semiconductor device in which the stacking fault area enlarged and the on-state forward voltage has been increased by on-state forward bias operation, is heated at a temperature of higher than 350° C. | 08-06-2009 |
20090140195 | Gate valve - An object is to provide a gate valve capable of preventing operational deficiencies caused by particulate materials accumulating in a valve box, thus providing superior sealing properties and high durability, having a simple structure, and allowing inspection and maintenance to be performed easily. A gate valve installed in a transport line for transporting fluid containing particulate material at a coal gasification plant includes a valve box having an inlet portion and an outlet portion in which a channel constituting a part of the transport line is formed; a valve unit, provided between the inlet portion and the outlet portion, which extends in an opening-and-closing direction orthogonal to an axial direction of the channel, and which is movable in the opening-and-closing direction; a wedge plate provided between the valve unit and the inlet portion so as to extend in the opening-and-closing direction; and a guide plate provided between the valve unit and the outlet portion so as to extend in the opening-and-closing direction. Areas between the valve unit and the wedge plate and between and the valve unit and guide plate are sealed by means of surface contact. | 06-04-2009 |
20090096053 | Schottky Barrier Semiconductor Device and Method for Manufacturing the Same - A silicon carbide Schottky barrier semiconductor device provided with a Ta electrode as a Schottky electrode, in which the Schottky barrier height is controlled to a desired value in a range where power loss is minimized without increasing the n factor. The method for manufacturing the silicon carbide Schottky barrier semiconductor device includes the steps of depositing Ta on a crystal face of an n-type silicon carbide epitaxial film, the crystal face having an inclined angle in the range of 0° to 10° from a (000-1) C face, and carrying out a thermal treatment at a temperature range of 300 to 1200° C. to form the Schottky electrode. | 04-16-2009 |
20090065446 | PROCESS OF TREATING SELENIUM-CONTAINING LIQUID - It is to provide a process of treating a selenium-containing liquid which can inexpensively treat the selenium-containing liquid. The formation of selenate is inhibited by adding at least one selected from a group consisting of Ti and Mn into the selenium-containing liquid. | 03-12-2009 |
20090047772 | Method for Improving the Quality of a SiC Crystal - A method for improving the quality of a SiC layer by effectively reducing or eliminating the carrier trapping centers in the as-grown SiC crystal. The method includes the steps of: (a) carrying out ion implantation of carbon atoms, silicon atoms, hydrogen atoms, or helium atoms into a shallow surface layer of the SiC crystal layer to introduce carbon interstitials into the surface layer, and (b) growing the SiC layer upward from the edge face of the surface layer into which the carbon interstitials have been introduced, and diffusing out the carbon interstitials that have been introduced into the surface layer from the surface layer into the grown layer and combining the carbon interstitials and point defects to make the electrically active point defects in the grown layer inactive. | 02-19-2009 |
20090045413 | Silicon Carbide Bipolar Semiconductor Device - In a SiC bipolar semiconductor device with a mesa structure having a SiC drift layer of a first conductive type and a SiC carrier injection layer of a second conductive type that are SiC epitaxial layers grown from a surface of a SiC single crystal substrate, the formation of stacking faults and the expansion of the area thereof are prevented and thereby the increase in forward voltage is prevented. Further, a characteristic of withstand voltage in a reverse biasing is improved. An forward-operation degradation preventing layer is formed on a mesa wall or on a mesa wall and a mesa periphery to separate spatially the surface of the mesa wall from a pn-junction interface. In one embodiment, the forward-operation degradation preventing layer is composed of a silicon carbide low resistance layer of a second conductive type that is equipotential during the application of a reverse voltage. In another embodiment, the forward-operation degradation preventing layer is composed of a silicon carbide conductive layer of a second conductive type, and a metal layer that is equipotential during the application of a reverse voltage is formed on a surface of the silicon carbide conductive layer. In still another embodiment, the forward-operation degradation preventing layer is composed of a high resistance amorphous layer. | 02-19-2009 |
20090039358 | SiC Crystal Semiconductor Device - A method for improving the quality of a SiC layer by effectively reducing or eliminating the carrier trapping centers by high temperature annealing and a SiC semiconductor device fabricated by the method. The method for improving the quality of a SiC layer by eliminating or reducing some carrier trapping centers includes the steps of: (a) carrying out ion implantation of carbon atom interstitials (C), silicon atoms, hydrogen atoms, or helium atoms into a shallow surface layer (A) of the starting SiC crystal layer (E) to introduce excess carbon interstitials into the implanted surface layer, and (b) heating the layer for making the carbon interstitials (C) to diffuse out from the implanted surface layer (A) into a bulk layer (E) and for making the electrically active point defects in the bulk layer inactive. After the above steps, the surface layer (A) can be etched or mechanically removed. The SiC semiconductor device is fabricated by the method. | 02-12-2009 |
20090036314 | METHOD OF FORMING OXIDE SUPERCONDUCTOR THICK FILM - To provide an oxide superconductor thick film formation method that can enhance adhesiveness of a Bi2223 thick film to a body to be processed on which the Bi2223 thick film is formed, and increase a cross-sectional area of the Bi2223 thick film, without a decrease in Jc of the Bi2223 thick film. A mixture of a compound oxide having composition Bi2212 and Pb is applied to a surface of the body to be processed, and burned to form a first thick film. An oxide superconductor thick film expressed by a general formula (Bi, Pb) | 02-05-2009 |
20080307704 | Coal gasification plant and method for operating the same - It is an object to solve a bypass line corrosion problem effectively, enable prompt supply of a fuel gas into a bypass line in the event of an emergency, and provide an inexpensive coal gasification plant. An integrated coal gasification combined cycle power generation plant includes a coal gasification furnace, a dust remover, a gas refiner, a gas turbine and the like, a main system line connecting therebetween, and a bypass line connecting between the outlet side of the coal gasification furnace in the main system line and a flare stack, wherein a dust remover bypass valve which is disposed in an upstream portion of the bypass line and which opens and closes the bypass line, a treatment gas control valve which is disposed in a downstream portion of the bypass line and which controls the flow rate, and a first inert gas input line which is disposed downstream from the dust remover bypass valve and which supplies the inert gas to the bypass line are provided. | 12-18-2008 |
20080216405 | CARBONIZATION AND GASIFICATION OF BIOMASS AND POWER GENERATION SYSTEM - Biomass, including waste biomass, is gasified by a process in which the biomass is first carbonized, and the char and pyrolysis gas from the carbonizer are respectively fed to a high temperature gasifying part and a gas reformer part of a two-stage gasifier A gasifying agent is continuously fed to the gasifying part, and intermittently fed to the gas reformer, to maintain the temperature required to avoid tar formation in the gas reformer stage. Multiple carbonization chambers are operated in rotation. When the carbonization/gasification apparatus is used to provide fuel to an electric power generator set, exhaust heat from the generator power plant is fed back to the carbonizer, and can be supplemented by exchange of heat from the gas delivered to generator power plant from the outlet of the gasifier. | 09-11-2008 |