ASM IP HOLDING B.V. Patent applications |
Patent application number | Title | Published |
20160121462 | METHOD OF MOUNTING SUBSTRATE SUPPORT IN CHAMBER, METHOD OF DISMOUNTING SUBSTRATE SUPPORT AND AUXILIARY TRANSPORT TOOL - A method of mounting a substrate support in a chamber includes placing an auxiliary transfer tool having a first portion and a second portion in a chamber which provides a processing space and an additional space, and which has an opening for communication between the additional space and the outside, the first portion in an expanded state being positioned in the processing space and the second portion being positioned in the additional space, inserting a substrate support having a contact portion for supporting the substrate, a rod portion, and a threaded portion connecting to the rod portion, the rod portion being slid on a side surface of the second portion, shrinking the first portion so that the rod portion is moved downward in the additional space and the threaded portion projects out of the chamber through the opening. | 05-05-2016 |
20160026480 | SUBSTRATE PROCESSING SYSTEM, STORAGE MEDIUM AND METHOD OF REGISTERING NEW DEVICE - A substrate processing system includes a main control unit having a configuration file in which ID information and detail information about devices for processing a substrate is recorded, the detail information includes information needed for controlling the devices, and a module controller having a list file obtained by converting the configuration file into a readable form, the module controller controlling the devices described in the list file on the basis of instructions from the main control unit. The module controller automatically adds, to the list file, ID information and detail information about a new device newly connected to the module controller to establish a condition under which the new device can be controlled. | 01-28-2016 |
20150361557 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A substrate processing apparatus includes a susceptor on which a substrate is placed, a processing chamber that accommodates the susceptor, a multi-wavelength light source that generates multi-wavelength light, a light absorption chamber partially comprising a transmission plate for allowing the multi-wavelength light to pass therethrough and configured to prevent a gas from accessing the processing chamber, an introducing pipe that introduces the gas into the light absorption chamber, and an exhaust pipe that exhausts the gas from the light absorption chamber, wherein the multi-wavelength light passes through the transmission plate, then passes through the light absorption chamber and reaches the substrate. | 12-17-2015 |
20150332949 | Method For Reducing Particle Generation At Bevel Portion Of Substrate - A method for transporting a substrate using an end effector which mechanically clamps a periphery of the substrate includes: before transporting the substrate, depositing a compressive film only on, at, or in a bevel portion of the substrate; and transporting the substrate whose bevel portion is covered by the compressive film as the outermost film, using an end effector while mechanically clamping the periphery of the substrate. | 11-19-2015 |
20150315704 | Low-Oxidation Plasma-Assisted Process - A method for forming an oxide film by plasma-assisted cyclic processing, includes: (i) supplying a precursor to a reaction space wherein a substrate is placed; (ii) applying a first RF power to the reaction space for a first period of time without supplying a precursor; and (iii) applying a second RF power to the reaction space for a second period of time without supplying the precursor, wherein the first RF power is lower than the second RF power, and/or the first period of time is shorter than the second period of time. | 11-05-2015 |
20150309504 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes a plurality of arms used for transferring a substrate, a plurality of processing sections for processing the substrate, a recipe storage section storing at least one recipe for designating at least one of the plurality of arms as a usable arm and at least one of the plurality of processing sections as a usable processing section and for specifying processing conditions in the usable processing section, and a control unit for, according to the at least one recipe, controlling the plurality of arms and the plurality of processing sections so that a substrate is transferred using the usable arm and is processed in the usable processing section under the processing conditions. | 10-29-2015 |
20150308586 | LOCKOUT TAGOUT FOR SEMICONDUCTOR VACUUM VALVE - A device for limiting travel of a valve including a body removably connected to a transfer module, a vacuum valve, or a reaction chamber, a travel limiting rod passing through the body to engage and limit travel of the valve, and wherein the body includes at least one mounting flange opposite the travel limiting rod. | 10-29-2015 |
20150303079 | MODULAR VERTICAL FURNACE PROCESSING SYSTEM - A vertical furnace processing system for processing semiconductor substrates, comprising the following modules:—a processing module including a vertical furnace; an I/O-station module including at least one load port to which a substrate cassette is dockable; a wafer handling module configured to transfer semiconductor substrates between the processing module and a substrate cassette docked to the load port of the I/O-station module; and a gas supply module including at least one gas supply or gas supply connection for providing the vertical furnace of the processing module with process gas, wherein at least two of the said modules are mutually decouplably coupled, such that said at least two modules are decouplable from one another to facilitate servicing of the system, and in particular the vertical furnace thereof. | 10-22-2015 |
20150300865 | SUBSTRATE PROCESSING APPARATUS - The amount of processing liquid consumed from the processing liquid in the tank is calculated based on the history of opening and closing events of one or more of the valves, and that the anomaly detection controller of the substrate processing apparatus generates a level sensor failure alarm if the calculated amount of consumed processing liquid has increased beyond a state transition liquid consumption amount and yet the level sensor has not switched from the first state to the second state. The substrate processing apparatus and the level sensor are designed so that the level sensor switches from the first state to the second state when the calculated amount of consumed processing liquid has increased beyond the state transition liquid consumption amount. | 10-22-2015 |
20150287626 | Anti-Slip End Effector For Transporting Workpiece Using Van Der Waals Force - An anti-slip end effector for transporting a workpiece, configured to be attached to a robotic arm, includes: a workpiece-supporting area for placing a workpiece thereon for transportation; and at least one anti-slip protrusion disposed in the workpiece-supporting area for supporting a backside of the workpiece, said anti-slip protrusion having a top face capable of contacting and adhering to the backside of the workpiece by van der Waals force and capable of pivoting on a pivot axis, said pivot axis being disposed away from a center of the top face as viewed from above. | 10-08-2015 |
20150284848 | Method for Stabilizing Reaction Chamber Pressure - A method stabilizes pressure of a reaction chamber during a process using a first gas and a second gas, wherein a gas inlet line is connected to the reaction chamber, and a second gas line and a first gas line are connected to another end of the gas inlet line. The method includes: feeding a first gas in pulses according to a waveform to the reaction chamber through the first gas line and the gas inlet line; and feeding a second gas in pulses according to a reverse waveform to the reaction chamber through the second gas line and the gas inlet line, wherein superimposed waveforms of the waveform and reverse waveform are made substantially or nearly fiat, thereby stabilizing pressure of the reaction chamber. | 10-08-2015 |
20150279681 | PLASMA ATOMIC LAYER DEPOSITION - Plasma atomic layer deposition (ALD) is optimized through modulation of the gas residence time during an excited species phase, wherein activated reactant is supplied such as from a plasma. Reduced residence time increases the quality of the deposited layer, such as reducing wet etch rates, increasing index of refraction and/or reducing impurities in the layer. For example, dielectric layers, particularly silicon nitride films, formed from such optimized plasma ALD processes have low levels of impurities remaining from the silicon precursor. | 10-01-2015 |
20150270122 | PLASMA PRE-CLEAN MODULE AND PROCESS - A method for integrated circuit fabrication can include removing silicon oxide by a pre-clean process. The pre-clean process can include depositing a halogen-containing material on the surface of a substrate in a first reaction chamber, and transferring the substrate having the halogen-containing material to a second reaction chamber. Silicon oxide material can be removed from a surface of the substrate by sublimating the halogen-containing material in the second reaction chamber. A target material, such as a conductive material, may subsequently be deposited on the substrate surface in the second reaction chamber. | 09-24-2015 |
20150267299 | GAS DISTRIBUTION SYSTEM, REACTOR INCLUDING THE SYSTEM, AND METHODS OF USING THE SAME - A gas distribution system, a reactor system including the gas distribution system, and method of using the gas distribution system and reactor system are disclosed. The gas distribution system can be used in gas-phase reactor systems to independently fine tune gas source locations and gas flow rates of reactants to a reaction chamber of the reactor systems. | 09-24-2015 |
20150267297 | Method for Performing Uniform Processing in Gas System-Sharing Multiple Reaction Chambers - A method for performing uniform processing in multiple reaction chambers includes (a) conducting a cycle constituted by steps in each reaction chamber according to the order of the reaction chambers at which the steps are conducted; and then (b) conducting the steps in each reaction chamber after changing the immediately prior order of the reaction chambers at which the steps are conducted; and then (c) repeating process (b) until a target treatment is complete at the multiple reaction chambers. The target treatment conducted on a substrate in each reaction chamber is the same. | 09-24-2015 |
20150267295 | REMOVABLE SUBSTRATE TRAY AND ASSEMBLY AND REACTOR INCLUDING SAME - A substrate tray, a susceptor assembly including a substrate tray, and a reactor including a substrate tray and/or susceptor assembly are disclosed. The substrate tray is configured to retain a substrate during processing and can be formed of a substantially non-reactive material. The substrate tray can be received by a susceptor, formed of another material, to form the susceptor assembly. | 09-24-2015 |
20150252479 | FILM FORMING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A film forming apparatus includes a reactor chamber, a first electrode provided in the reactor chamber and receiving electrical power, a second electrode provided in the reactor chamber and facing the first electrode, a gas supply inlet for supplying material gas to a space between the first and second electrodes, and a gas exhaust outlet for discharging the material gas. Insulating material is not exposed to a flow path for the material gas in the reactor chamber. | 09-10-2015 |
20150240359 | Gas Supply Manifold And Method Of Supplying Gases To Chamber Using Same - A gas inlet system for a wafer processing reactor includes a tubular gas manifold conduit adapted to be connected to a gas inlet port of the wafer processing reactor; and gas feeds including a first feed for feeding a first gas into the tubular gas manifold conduit and a second feed for feeding a second gas into the tubular gas manifold conduit. Each feed has two or more injection ports connected to the tubular gas manifold conduit at a first axial position of the tubular gas manifold conduit, and the injection ports of each of the gas feeds are evenly distributed along a circumference of the tubular gas manifold conduit at the first axial position. | 08-27-2015 |
20150217456 | ANTI-SLIP END-EFFECTOR FOR TRANSPORTING WORKPIECE - An anti-slip end-effector for transporting a workpiece, which is configured to be attached to a robotic arm, includes: a workpiece-supporting area for placing a workpiece thereon for transportation; at least one front protrusion disposed at a distal end of the workpiece-supporting area for engaging an edge of the workpiece to restrict movement of the workpiece placed on the workpiece-supporting area beyond the front protrusion; and at least one anti-slip protrusion disposed in the workpiece-supporting area for contacting and supporting the backside of the workpiece, said anti-slip protrusion having a top face having a static friction coefficient of 1.0 or more as measured against the backside of the workpiece, and having a surface roughness of less than 0.4 μm. | 08-06-2015 |
20150147483 | Method for Forming Conformal Nitrided, Oxidized, or Carbonized Dielectric Film by Atomic Layer Deposition - A method for forming a film on a patterned surface of a substrate by atomic layer deposition (ALD) processing includes: adsorbing onto a patterned surface a first precursor containing silicon or metal in its molecule; adsorbing onto the first-precursor-adsorbed surface a second precursor containing no silicon or metal in its molecule; exposing the second-precursor-adsorbed surface to an excited reactant to oxidize, nitride, or carbonize the precursors adsorbed on the surface of the substrate; and repeating the above cycle to form a film on the patterned surface of the substrate. | 05-28-2015 |
20150132212 | METHOD FOR FORMING CONFORMAL CARBON FILMS, STRUCTURES AND DEVICES INCLUDING A CONFORMAL CARBON FILM, AND SYSTEM OF FORMING SAME - Methods of forming carbon films, structures and devices including the carbon films, and systems for forming the carbon films are disclosed. A method includes depositing a metal carbide film using atomic layer deposition (ALD). Metal from the metal carbide film is removed from the metal carbide film to form a carbon film. Because the films are formed using ALD, the films can be relatively conformal and can have relatively uniform thickness over the surface of a substrate. | 05-14-2015 |
20150125628 | METHOD OF DEPOSITING THIN FILM - Disclosed is a method of depositing a thin film, which includes supplying a purge gas and a source gas into a plurality of reactors for a first period, stopping supplying of the source gas, and supplying the purge gas and a reaction gas into the plurality of reactors for a second period, and supplying the reaction gas and plasma into the plurality of reactors for a third period. | 05-07-2015 |
20150118864 | Method for Treating SiOCH Film With Hydrogen Plasma - A method for forming a gap-fill SiOCH film on a patterned substrate includes: (i) providing a substrate having recessed features on its surface; (ii) filling the recessed features of the substrate with a SiOCH film which is flowable and non-porous; (iii) after completion of step (ii), exposing the SiOCH film to a plasma including a hydrogen plasma; and (iv) curing the plasma-exposed SiOCH film with UV light. | 04-30-2015 |
20150118846 | Method For Trimming Carbon-Containing Film At Reduced Trimming Rate - A method for trimming a carbon-containing film includes: (i) providing a substrate having a carbon-containing film formed thereon; (ii) supplying a trimming gas and a rare gas to the reaction space, which trimming gas includes an oxygen-containing gas; and (iii) applying RF power between the electrodes to generate a plasma using the trimming gas and the rare gas and to thereby trim the carbon-containing film while controlling a trimming rate at 55 nm/min or less as a function of at least one parameter selected from the group consisting of a flow rate of an oxygen-containing gas, a flow rate of nitrogen-containing gas to be added to the oxygen-containing gas, pressure in the reaction space, RF power, a duty cycle of RF power, a distance between the electrodes, and a temperature of a susceptor on which the substrate is placed. | 04-30-2015 |
20150099072 | Method for Forming Ti-Containing Film by PEALD using TDMAT or TDEAT - A method for forming a Ti-containing film on a substrate by plasma-enhanced atomic layer deposition (PEALD) using tetrakis(dimethylamino)titanium (TDMAT) or tetrakis(diethylamino)titanium (TDEAT), includes: introducing TDMAT and/or TDEAT in a pulse to a reaction space where a substrate is placed; continuously introducing a NH | 04-09-2015 |
20150091057 | SEMICONDUCTOR STRUCTURE AND DEVICE AND METHODS OF FORMING SAME USING SELECTIVE EPITAXIAL PROCESS - Semiconductor structures, devices, and methods of forming the structures and device are disclosed. Exemplary structures include multi-gate or FinFET structures that can include both re-channel MOS (NMOS) and p-channel MOS (PMOS) devices to form CMOS structures and devices on a substrate. The devices can be formed using selective epitaxy and shallow trench isolation techniques. | 04-02-2015 |
20150079311 | Method for Forming Oxide Film by Plasma-Assisted Processing - A method for forming an oxide film by plasma-assisted processing includes: (i) supplying a precursor reactive to none of oxygen, C | 03-19-2015 |
20150064932 | Method For Restoring Porous Surface Of Dielectric Layer By UV Light-Assisted ALD - A method for restoring a porous surface of a dielectric layer formed on a substrate, includes: (i) providing in a reaction space a substrate on which a dielectric layer having a porous surface with terminal hydroxyl groups is formed as an outer layer; (ii) supplying gas of a Si—N compound containing a Si—N bond to the reaction space to chemisorb the Si—N compound onto the surface with the terminal hydroxyl groups; (iii) irradiating the Si—N compound-chemisorbed surface with a pulse of UV light in an oxidizing atmosphere to oxidize the surface and provide terminal hydroxyl groups to the surface; and (iv) repeating steps (ii) through (iii) to form a film on the porous surface of the dielectric layer for restoration. | 03-05-2015 |
20150056821 | Method for Forming SiOCH Film Using Organoaminosilane Annealing - A method for forming a modified low-k SiOCH film on a substrate, includes: providing a low-k SiOCH film formed on a substrate by flowable CVD; exposing the low-k SiOCH film to a gas containing a Si—N bond in its molecule without applying electromagnetic energy to increase Si—O bonds and/or Si—C bonds in the film; and then curing the low-k SiOCH film. | 02-26-2015 |
20150048485 | METHODS OF FORMING FILMS INCLUDING GERMANIUM TIN AND STRUCTURES AND DEVICES INCLUDING THE FILMS - Methods of forming germanium-tin films using germane as a precursor are disclosed. Exemplary methods include growing films including germanium and tin in an epitaxial chemical vapor deposition reactor, wherein a ratio of a tin precursor to germane is less than 0.1. Also disclosed are structures and devices including germanium-tin films formed using the methods described herein. | 02-19-2015 |
20150024609 | SEMICONDUCTOR REACTION CHAMBER WITH PLASMA CAPABILITIES - A processing chamber including a reaction chamber having a processing area, a processing gas inlet in communication with the processing area, a first excited species generation zone in communication with the processing gas inlet and a second exited species generation zone in communication with the processing gas inlet. A method of processing a substrate including the steps of loading a substrate within a processing area, activating a first excited species generation zone to provide a first excited species precursor to the processing area during a first pulse and, activating a second excited species generation zone to provide a second excited species precursor different from the first excited species precursor to the processing area during a second pulse. | 01-22-2015 |
20150014816 | DOPED SEMICONDUCTOR FILMS AND PROCESSING - A method of forming a semiconductor material incorporating an electrical dopant is disclosed. In one aspect, a method of incorporating dopant in a semiconductor film comprises forming a first semiconductor material incorporating the dopant at a first dopant concentration and preferentially etching a portion of the first semiconductor material, wherein etching leaves a first etched semiconductor material incorporating the dopant at a second dopant concentration higher than the first dopant concentration. | 01-15-2015 |
20140349033 | Method For Forming Film By Plasma-Assisted Deposition Using Two-Frequency Combined Pulsed RF Power - A method for forming a dielectric film on a substrate by plasma-assisted deposition, includes: introducing a Si-containing process gas to a reaction space wherein a substrate having a surface with patterned recesses is placed; and applying RF power to the process gas in the reaction space to form a dielectric film on the surface by plasma reaction. The RF power is comprised of pulses of high-frequency RF power and pulses of low-frequency RF power, which overlap and are synchronized. | 11-27-2014 |
20140338601 | DEPOSITION APPARATUS - A deposition apparatus according to an exemplary embodiment of the present invention includes: a reactor; a plasma chamber connected to the reactor; a plasma electrode mounted inside of the plasma chamber; and a gas supply plate coupled with the plasma chamber to supply gas into the plasma chamber, wherein a plurality of gas holes is formed at an inner wall of the gas supply plate, and the plurality of gas supply holes is spaced apart from each other by a predetermined interval. | 11-20-2014 |
20140322885 | METHOD OF MAKING A RESISTIVE RANDOM ACCESS MEMORY DEVICE - A method for forming a resistive random access memory (RRAM) device is disclosed. The method comprises forming a first electrode, forming a resistive switching oxide layer comprising a metal oxide by thermal atomic layer deposition (ALD) and forming a second electrode by thermal atomic layer deposition (ALD), where the resistive switching layer is interposed between the first electrode and the second electrode. Forming the resistive switching oxide may be performed without exposing a surface of the switching oxide layer to a surface-modifying plasma treatment after depositing the metal oxide. | 10-30-2014 |
20140322862 | METHOD OF MAKING A RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH METAL-DOPED RESISTIVE SWITCHING LAYER - A method for forming a resistive random access memory (RRAM) device is disclosed. The method comprises forming a first electrode, forming a resistive switching oxide layer comprising a metal oxide by thermal atomic layer deposition (ALD), doping the resistive switching oxide layer with a metal dopant different from metal forming the metal oxide, and forming a second electrode by thermal atomic layer deposition (ALD), where the resistive switching layer is interposed between the first electrode and the second electrode. In some embodiments, forming the resistive switching oxide may be performed without exposing a surface of the switching oxide layer to a surface-modifying plasma treatment after depositing the metal oxide. | 10-30-2014 |
20140315396 | CONNECTOR WITH AIR EXTRACTION - An electrical connector a semiconductor processing tool is provided. The electrical connector comprises a male connector part having pins and a first holder in which the pins are mounted and a female connector part having sockets and a second holder in which the sockets are mounted. The male connector part is configured to mate with the female connector part, and at least one of the male connector part and the female connector part has an air extraction conduit of which one end communicates with a vacuum pump and the other end communicates with a space formed between the male connector part and the female connector part. | 10-23-2014 |
20140302447 | WAFER BOAT HAVING DUAL PITCH - A wafer boat is provided for holding a plurality of wafers in a vertically stacked and spaced relationship. The wafer boat comprises a top member; a bottom member facing the top member; and at least three vertical members extending between the top member and the bottom member. The vertical members are provided with a plurality of protrusions, the protrusions configured to form a plurality of wafer accommodations at different vertical heights, the protrusions configured to be arranged in groups of at least two protrusions. A pitch of protrusions within a group has a first value and a pitch of two adjacent protrusions that belong to different groups has a second value larger than the first value. | 10-09-2014 |
20140273531 | Si PRECURSORS FOR DEPOSITION OF SiN AT LOW TEMPERATURES - Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). | 09-18-2014 |
20140273528 | Si PRECURSORS FOR DEPOSITION OF SiN AT LOW TEMPERATURES - Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). | 09-18-2014 |
20140273477 | Si PRECURSORS FOR DEPOSITION OF SiN AT LOW TEMPERATURES - Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). | 09-18-2014 |
20140273452 | DEPOSITION OF SMOOTH METAL NITRIDE FILMS - In one aspect, methods of forming smooth ternary metal nitride films, such as Ti | 09-18-2014 |
20140273428 | SILANE OR BORANE TREATMENT OF METAL THIN FILMS - The negative effect of oxygen on some metal films can be reduced or prevented by contacting the films with a treatment agent comprising silane or borane. In some embodiments, one or more films in an NMOS gate stack are contacted with a treatment agent comprising silane or borane during or after deposition. | 09-18-2014 |
20140251954 | PULSED REMOTE PLASMA METHOD AND SYSTEM - A system and method for providing pulsed excited species from a remote plasma unit to a reaction chamber are disclosed. The system includes a pressure control device to control a pressure at the remote plasma unit as reactive species from the remote plasma unit are pulsed to the reaction chamber. | 09-11-2014 |
20140251953 | METHOD AND SYSTEMS FOR IN-SITU FORMATION OF INTERMEDIATE REACTIVE SPECIES - A system and method for providing intermediate reactive species from a remote plasma unit to a reaction chamber are disclosed. The system includes a pressure control device to control a pressure at the remote plasma unit as intermediate reactive species from the remote plasma unit are provided to the reaction chamber. | 09-11-2014 |
20140220247 | METHOD AND SYSTEM FOR TREATMENT OF DEPOSITION REACTOR - A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation. | 08-07-2014 |
20140217065 | MULTI-STEP METHOD AND APPARATUS FOR ETCHING COMPOUNDS CONTAINING A METAL - A system and method for etching a material, including a compound having a formulation of XYZ, wherein X and Y are one or more metals and Z is selected from one or more Group 13-16 elements, such as carbon, nitrogen, boron, silicon, sulfur, selenium, and tellurium, are disclosed. The method includes a first etch process to form one or more first volatile compounds and a metal-depleted layer and a second etch process to remove at least a portion of the metal-depleted layer. | 08-07-2014 |
20140213065 | Method for Forming Layer Constituted by Repeated Stacked Layers - A method for forming a layer constituted by repeated stacked layers includes: forming a first layer and a second layer on a substrate under different deposition conditions to form a stacked layer, wherein the film stresses of the first and second layers are tensile or compressive and opposite to each other, and the wet etch rates of the first and second layers are at least 50 times different from each other; and repeating the above step to form a layer constituted by repeated stacked layers, wherein the deposition conditions for forming at least one stacked layer are different from those for forming another stacked layer. | 07-31-2014 |
20140202382 | DEPOSITION APPARATUS - A deposition apparatus is provided to eliminate unnecessary empty spaces that may form between a substrate and a substrate supporting pin, which may be formed within a substrate supporting pin hole, by covering the substrate supporting pin, inserted into the substrate supporting pin hole formed in the substrate support, by a substrate supporting pin cover loaded on the substrate support. Accordingly, the temperature under the substrate can be maintained constant, and generation of parasitic plasma or contaminating particles can be avoided. | 07-24-2014 |
20140174354 | Single-and dual-chamber module-attachable wafer-handling chamber - A single- and dual-chamber module-attachable wafer-handling chamber includes: a wafer-handling main chamber equipped with a wafer-handling robot therein, and adaptors for connecting process modules to the wafer-handling main chamber. The adaptors are detachably attached to the sides of the wafer-handling main chamber, respectively, and the process modules are detachably attached to the adaptors, respectively, so that the process modules can be attached to the wafer-handling main chamber, regardless of whether the process modules are of a single-chamber type or dual-chamber type. | 06-26-2014 |
20140174342 | METHODS FOR INCREASING GROWTH RATE OF THIN FILMS - The present invention generally related to adding Indium precursors to deposition processes for thin films. Indium precursors are added in order to increase the growth rate per cycle of the deposition process. A plurality of deposition processes are disclosed herein which comprising a plurality of deposition cycles and providing an In-precursor pulse before at least one reactant pulse in at least one deposition cycle. The In-precursor can be added for increasing the average growth rate per cycle by at least 50% and in many examples above 500% compared to the growth rate of a similar deposition process without providing an In-precursor. Examples disclosed herein include the deposition of thin films comprising pnictides or chalcogenides, made by atomic layer deposition. | 06-26-2014 |
20140148924 | SCHEDULER FOR PROCESSING SYSTEM - A semiconductor processing system that includes a controller is disclosed. The controller may be configured to schedule the operation of the system. The controller may be programmed to determine a current state of the system. The current state may be defined at least by a location of one or more substrates and a processing status of the one or more substrates. The controller may be further programmed to generate a search tree having one or more branches. Each branch may identify one or more subsequent actions or branch pathways capable of being performed by the system in the current state. Further, the controller may be programmed to score each branch pathway of the generated search tree. The controller may be programmed to select a branch pathway and provide instructions to perform the actions in that branch pathway based at least in part on the score of the branch pathway. | 05-29-2014 |
20140141625 | Method for Forming Insulation Film Using Non-Halide Precursor Having Four or More Silicons - A method of forming an insulation film on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: (i) adsorbing a non-excited non-halide precursor having four or more silicon atoms in its molecule onto a substrate placed in a reaction space; (ii) supplying an oxygen-free reactant to the reaction space without applying RF power so as to expose the precursor-adsorbed substrate to the reactant; and (iii) after step (ii), applying RF power to the reaction space while the oxygen-free reactant is supplied in the reaction space; and (iv) repeating steps (i) to (iii) as a cycle, thereby depositing an insulation film on the substrate. | 05-22-2014 |
20140116335 | UV Irradiation Apparatus with Cleaning Mechanism and Method for Cleaning UV Irradiation Apparatus - A UV irradiation apparatus for processing a semiconductor substrate includes: a UV lamp unit; a reaction chamber disposed under the UV lamp unit; a gas ring with nozzles serving as a first electrode between the UV lamp unit and the reaction chamber; a transmission window supported by the gas ring; an RF shield which covers a surface of the transmission window facing the UV lamp unit; a second electrode disposed in the reaction chamber for generating a plasma between the first and second electrodes; and an RF power source for supplying RF power to one of the first or second electrode. | 05-01-2014 |
20140109832 | DEPOSITION APPARATUS - In a deposition apparatus, as a plurality of plasma connection terminals that transfer plasma power to a plasma electrode are coupled in parallel to the plasma electrode, resistance caused by the plurality of plasma connection terminals is reduced and a current is distributed such that heat generated in the plurality of plasma connection terminals can be distributed. Therefore, even if high RF power is used, by preventing the plurality of plasma connection terminals from being oxidized, plasma is stably supplied and thus, stability of a deposition apparatus and the accuracy of a process can be enhanced. | 04-24-2014 |
20140106070 | VAPOR DEPOSITION OF LiF THIN FILMS - A vapor deposition process for forming a thin film on a substrate in a reaction chamber where the process includes contacting the substrate with a fluoride precursor. The process results in the formation of a lithium fluoride thin film. | 04-17-2014 |
20140103145 | SEMICONDUCTOR REACTION CHAMBER SHOWERHEAD - A showerhead including a body having an opening, a first plate positioned within the opening and having a plurality of slots, a second plate positioned within the opening and having a plurality of slots, and wherein each of the first plate plurality of slots are concentrically aligned with the second plate plurality of slots. | 04-17-2014 |
20140099798 | UV-Curing Apparatus Provided With Wavelength-Tuned Excimer Lamp and Method of Processing Semiconductor Substrate Using Same - A UV irradiation apparatus for processing a semiconductor substrate includes: a UV lamp unit having at least one dielectric barrier discharge excimer lamp which is constituted by a luminous tube containing a rare gas wherein an inner surface of the luminous tube is coated with a fluorescent substance having a peak emission spectrum in a wavelength range of 190 nm to 350 nm; and a reaction chamber disposed under the UV lamp unit and connected thereto via a transmission window. | 04-10-2014 |
20140096716 | Heating/Cooling Pedestal for Semiconductor-Processing Apparatus - A pedestal for supporting a substrate includes: a heating plate for heating the substrate; an upper cooling plate for cooling the substrate, installed on the heating plate and provided with an upper fluid path for passing a cooling fluid therethrough; and an lower cooling plate for cooling the substrate, installed under the heating plate and including a lower fluid path for passing a cooling fluid therethrough. | 04-10-2014 |
20140084341 | STRUCTURES AND DEVICES INCLUDING A TENSILE-STRESSED SILICON ARSENIC LAYER AND METHODS OF FORMING SAME - Structures including a tensile-stressed silicon arsenic layer, devices including the structures, and methods of forming the devices and structures are disclosed. Exemplary tensile-stressed silicon arsenic layer have an arsenic doping level of greater than 5 E+20 arsenic atoms per cubic centimeter. The structures can be used to form metal oxide semiconductor devices. | 03-27-2014 |
20140072726 | DEPOSITION APPARATUS AND METHOD OF DEPOSITING THIN FILM USING THE SAME - A deposition apparatus and a method of depositing a thin film using the same are provided. By maintaining pressure of an external chamber between a reaction space and an outer wall slightly lower than pressure of the reaction space by supplying a charge gas to an external chamber of a space between the reaction space and an outer wall, parasitic plasma can be prevented from being generated within the external chamber. When loading or unloading a substrate, a charge gas of the external chamber can be prevented from flowing backward to the reaction space, and by supplying nitrogen gas as a charge gas, even if high plasma power is supplied, parasitic plasma can be effectively prevented from being generated in the external chamber. | 03-13-2014 |
20140067110 | SYSTEMS AND METHODS FOR DYNAMIC SEMICONDUCTOR PROCESS SCHEDULING - Embodiments of the present disclosure can help increase throughput and reduce resource conflicts and delays in semiconductor processing tools. An exemplary method according to various aspects of the present disclosure includes analyzing, by a computer program operating on a computer system, a plurality of expected times to complete each of a respective plurality of actions to be performed by a semiconductor processing tool, the semiconductor processing tool including a first process module and a second process module. | 03-06-2014 |
20140065841 | ATOMIC LAYER DEPOSITION OF GeO2 - Atomic layer deposition processes for forming germanium oxide thin films are provided. In some embodiments the ALD processes can include the following: contacting the substrate with a vapor phase tetravalent Ge precursor such that at most a molecular monolayer of the Ge precursor is formed on the substrate surface; removing excess Ge precursor and reaction by products, if any; contacting the substrate with a vapor phase oxygen precursor that reacts with the Ge precursor on the substrate surface; removing excess oxygen precursor and any gaseous by-products, and repeating the contacting and removing steps until a germanium oxide thin film of the desired thickness has been formed. | 03-06-2014 |
20140062304 | Method for Stabilizing Plasma Ignition - A method for stabilizing plasma ignition in a continuous process conducted on a substrate, includes: applying a spike of RF power between an upper electrode and a lower electrode on which the substrate is placed, wherein the spike starts from zero power, jumps to a spike power, and then drops to a base power which is so low as to cause plasma ignition failure; and continuously applying RF power at the base power between the upper and lower electrode for a duration substantially longer than a duration of the spike to process the substrate. The spike is such that ignition failure is reduced. | 03-06-2014 |
20140060147 | SYSTEMS AND METHODS FOR MASS FLOW CONTROLLER VERIFICATION - A method and system are disclosed for verifying the flow rate of gas through a mass flow controller, such as a mass flow controller used with a tool for semiconductor or solar cell fabrication. To verify the mass flow rate measured by the mass flow controller, gas passing through the mass flow controller is also passed through a mass flow meter. The measured flow rate through the mass flow controller is compared to the measured flow rate through the mass flow meter and any difference between the two measured flow rates is determined. Depending upon the magnitude of any difference, the flow of gas to the mass flow controller may be altered. | 03-06-2014 |
20140041588 | Method for Supplying Gas With Flow Rate Gradient Over Substrate - A method for supplying gas over a substrate in a reaction chamber wherein a substrate is placed on a pedestal, includes: supplying a first gas from a first side of the reaction chamber to a second side of the reaction chamber opposite to the first side; and adding a second gas to the first gas from sides of the reaction chamber other than the first side of the reaction chamber so that the second gas travels from sides of the substrate other than the first side in a downstream direction. | 02-13-2014 |
20140041579 | DEPOSITION APPARATUS - A deposition apparatus includes a substrate supporting pin that is fixed to a supporting plate through an autoalignment control unit to prevent the substrate supporting pin from being broken when loading or unloading a substrate, thereby preventing damaging the substrate and also preventing decreased yield that may result due to the breakage of the substrate supporting pin. | 02-13-2014 |
20140036274 | APPARATUS AND METHOD FOR CALCULATING A WAFER POSITION IN A PROCESSING CHAMBER UNDER PROCESS CONDITIONS - An apparatus for processing a wafer including a reaction chamber having a reaction space for processing the wafer, a susceptor positioned within the reaction chamber and having a sidewall, at least one light source positioned outside of the reaction space, at least one window in the reaction chamber, and wherein the at least one light source is directed through the at least one window to contact the sidewall. | 02-06-2014 |
20140033978 | Method of Parallel Shift Operation of Multiple Reactors - A method of parallel shift operation of multiple reactors includes: (i) continuously supplying n gases numbered | 02-06-2014 |
20140030859 | METHOD OF MAKING A WIRE-BASED SEMICONDUCTOR DEVICE - In some embodiments, a method for manufacturing forms a semiconductor device, such as a transistor. A dielectric stack is formed on a semiconductor substrate. The stack comprises a plurality of dielectric layers separated by one of a plurality of spacer layers. Each of the plurality of spacer layers is formed of a different material than immediately neighboring layers of the plurality of dielectric layers. A vertically-extending hole is formed through the plurality of dielectric layers and the plurality of spacer layers. The hole is filled by performing an epitaxial deposition, with the material filling the hole forming a wire. The wire is doped and three of the dielectric layers are sequentially removed and replaced with conductive material, thereby forming upper and lower contacts to the wire and a gate between the upper and lower contacts. The wire may function as a channel region for a transistor. | 01-30-2014 |
20140017414 | Method for Forming Aluminum Oxide Film Using Al Compound Containing Alkyl Group and Alkoxy or Alkylamine Group - A method for forming a conformal film of aluminum oxide on a substrate having a patterned underlying layer by PEALD includes: adsorbing an Al precursor containing an Al—C bond and an Al—O—C or Al—N—C bond; providing an oxidizing gas and an inert gas; applying RF power to the reactant gas and the reaction-assisting gas to react the adsorbed precursor with the reactant gas on the surface, thereby forming a conformal film of aluminum oxide on the patterned underlying layer of the substrate, wherein the substrate is kept at a temperature of about 200° C. or lower. | 01-16-2014 |
20140000843 | SUSCEPTOR HEATER AND METHOD OF HEATING A SUBSTRATE | 01-02-2014 |
20130337583 | METHOD FOR REPAIRING DAMAGE OF DIELECTRIC FILM BY CYCLIC PROCESSES - A method for repairing process-related damage of a dielectric film includes: (i) adsorbing a first gas containing silicon on a surface of the damaged dielectric film without depositing a film in the absence of reactive species, (ii) adsorbing a second gas containing silicon on a surface of the dielectric film, followed by applying reactive species to the surface of the dielectric film, to form a monolayer film thereon, and (iii) repeating step (ii). The duration of exposing the surface to the first gas in step (i) is longer than the duration of exposing the surface to the second gas in step (ii). | 12-19-2013 |
20130330933 | Method for Forming Silicon-Containing Dielectric Film by Cyclic Deposition with Side Wall Coverage Control - A method of forming a dielectric film having Si—C bonds and/or Si—N bonds on a semiconductor substrate by cyclic deposition, includes: (i) conducting one or more cycles of cyclic deposition in a reaction space wherein a semiconductor substrate is placed, using a Si-containing precursor and a reactant gas; and (ii) before or after step (i), applying a pulse of RF power to the reaction space while supplying a rare gas and a treatment gas without supplying a Si-containing precursor, whereby a dielectric film having Si—C bonds and/or Si—N bonds is formed on the semiconductor substrate. | 12-12-2013 |
20130320429 | PROCESSES AND STRUCTURES FOR DOPANT PROFILE CONTROL IN EPITAXIAL TRENCH FILL - Methods of depositing epitaxial material using a repeated deposition and etch process. The deposition and etch processes can be repeated until a desired thickness of silicon-containing material is achieved. During the deposition process, a doped silicon film can be deposited. The doped silicon film can be selectively deposited in a trench on a substrate. The trench can have a liner comprising silicon and carbon prior to depositing the doped silicon film. The doped silicon film may also contain germanium. Germanium can promote uniform dopant distribution within the doped silicon film. | 12-05-2013 |
20130309417 | METHODS FOR FORMING MULTI-COMPONENT THIN FILMS - The present application relates generally to atomic layer deposition of multi-component, preferably multi-component oxide, thin films. Provide herein is a method for depositing a multi-component oxide film by, for example, an ALD or PEALD process, wherein the process comprises at least two individual metal oxide deposition cycles. The method provided herein has particular advantages in producing multi-component oxide films having superior uniformity. A method is presented, for example, including depositing multi-component oxide films comprising components A-B-O by ALD comprising mixing two individual metal oxides deposition cycles A+O and B+O, wherein the subcycle order is selected in such way that as few as possible consecutive deposition subcycles for A+O or B+O are performed. | 11-21-2013 |
20130292676 | PHASE-STABILIZED THIN FILMS, STRUCTURES AND DEVICES INCLUDING THE THIN FILMS, AND METHODS OF FORMING SAME - Nitrogen-containing phase-stabilized films, methods of forming phase-stabilized films, and structures and devices including the phase-stabilized films are disclosed. The phase-stabilized films include a matrix material and a phase stabilizer, which provides a morphologically stabilizing effect to a matrix material within the films. The phase-stabilized films may be used as, for example, gate electrodes and similar films in microelectronic devices. | 11-07-2013 |
20130284683 | WAFER BOAT - A wafer boat for accommodating semiconductor wafers comprises two side rods and at least one back rod, the rods being vertically oriented and extending between a top member and a bottom member. The rods comprise vertically spaced recesses formed at corresponding heights, recesses at the same height defining a wafer accommodation for receiving and supporting a wafer in a substantially horizontal orientation, the recesses having an improved shape. The upwardly facing surfaces of the recesses comprise a first flat surface in an inward region of the recess which is horizontal or inclined upward in an outward direction of the recess and a second flat surface in an outer region of the recess which is inclined downward in an outward direction of the recess. The intersection of the first and second surface forming an edge for supporting the wafer. The recesses are easy to machine and prevent damage to the wafer. | 10-31-2013 |
20130276707 | VERTICAL FURNACE WITH CIRCUMFERENTIALLY DISTRIBUTED GAS INLET SYSTEM - A vertical furnace comprises a substantially cylindrical process tube vertically extending and delimiting a reaction space; a boat for accommodating a plurality of substrates to be vertically spaced apart from each other; a gas inlet system comprising a plurality of distribution tubes disposed at a circumference of the reaction space, wherein each of the distribution tubes have a plurality of gas injection holes distributed over a length of the distribution tubes and the distribution tubes are symmetrically disposed along an entire circumference of the reaction space; and at least one reaction gas source connected to the gas inlet system. | 10-24-2013 |
20130269615 | VERTICAL WAFER BOAT - A wafer boat for holding a plurality of semiconductor wafers in a spaced apart relationship during processing, comprising at least one support member defining a plurality of sets of at least two vertically spaced apart wafer holding provisions, each of which wafer holding provisions is configured to independently hold a wafer in a substantially horizontal orientation, and wherein said sets are arranged such that the wafer boat is configured to accommodate a plurality of juxtaposed stacks of substantially horizontally oriented, vertically spaced apart wafers. | 10-17-2013 |
20130247822 | DEPOSITION APPARATUS - In a deposition apparatus, a protecting member made of an elastic body is inserted into a pin hole where a fixed substrate supporting pin is inserted and the substrate supporting pin is fixed through the protecting member to prevent damages to the substrate and a decrease in yield due to damages to the substrate supporting pin by preventing the substrate supporting pin from being damaged by loading or unloading of the substrate or static electricity. Further, the deposition apparatus includes a substrate supporting pin guide member capable of preventing misalignment of an unfixed substrate supporting pin to prevent damages to the substrate and a decrease in the yield due to damages to the substrate supporting pin by preventing the substrate supporting pin from being damaged by loading or unloading of the substrate or static electricity. | 09-26-2013 |
20130244446 | Method for Forming Si-Containing Film Using Two Precursors by ALD - A method for forming a silicon-containing dielectric film on a substrate by atomic layer deposition (ALD) includes: providing two precursors, one precursor containing a halogen in its molecule, another precursor containing a silicon but no halogen in its molecule, adsorbing a first precursor, which is one of the two precursors onto a substrate to deposit a monolayer of the first precursor; adsorbing a second precursor, which is the other of the two precursors onto the monolayer of the first precursor to deposit a monolayer of the second precursor; and exposing the monolayer of the second precursor to radicals of a reactant to cause surface reaction with the radicals to form a compound monolayer of a silicon-containing film. | 09-19-2013 |
20130230814 | SUSCEPTOR HEATER SHIM - A substrate supporting assembly in a reaction space includes a heater, a substrate support member, and a shim positioned between the heater and the substrate support member. The shim may be removably secured between the heater and the substrate support member. The shim may further include an inner surface defining a perimeter of a gap. The gap may be further defined by a bottom surface of the substrate support member and a top surface of the heater. The substrate support member may further include a shoulder positioned radially outside of a substrate support position and wherein the shim inner surface is radially aligned with the substrate support member shoulder. | 09-05-2013 |
20130224964 | Method for Forming Dielectric Film Containing Si-C bonds by Atomic Layer Deposition Using Precursor Containing Si-C-Si bond - A method of forming a dielectric film having Si—C bonds on a semiconductor substrate by atomic layer deposition (ALD), includes: (i) adsorbing a precursor on a surface of a substrate; (ii) reacting the adsorbed precursor and a reactant gas on the surface; and (iii) repeating steps (i) and (ii) to form a dielectric film having at least Si—C bonds on the substrate. The precursor has a Si—C—Si bond in its molecule, and the reactant gas is oxygen-free and halogen-free and is constituted by at least a rare gas. | 08-29-2013 |
20130206069 | DEPOSITION APPARATUS - In a deposition apparatus, a coming-off prevention unit is formed on the side surface of a substrate supporting pin to prevent the substrate supporting pin from being separated from the deposition apparatus even if the substrate supporting pin sticking on the substrate due to static electricity occurring during the deposition process is moved. Therefore, damage of the substrate supporting pin or the substrate, which may occur when the substrate supporting pin comes off, can be prevented. Further, as a rod is inserted into a hole formed in the substrate supporting pin, the substrate supporting pin is prevented from coming off from a motion path, when the substrate supporting pin is moved in a vertical direction. Accordingly, damage of the substrate supporting pin, which may occur when the substrate supporting pin comes off during the vertical motion, can be prevented. | 08-15-2013 |
20130203267 | MULTIPLE VAPOR SOURCES FOR VAPOR DEPOSITION - A vapor deposition method and apparatus including at least two vessels containing a same first source chemical. A controller is programmed to simultaneously pulse to the reaction space doses or pulses of a gas from the vessels, each of the doses having a substantially consistent concentration of the first source chemical. The apparatus may also include at least two vessels containing a same second source chemical. The controller can be programmed to simultaneously pulse to the reaction space doses or pulses of a gas from the vessels containing the second source chemical, each of the doses having a substantially consistent concentration of the second source chemical. The second source chemical can be pulsed to the reaction space after the reaction space is purged of an excess of the first source chemical. | 08-08-2013 |
20130196080 | DEPOSITION APPARATUS AND DEPOSITION METHOD - A deposition apparatus according to an exemplary embodiment of the present invention includes a plurality of reactors; a plurality of gas supply units connected to the plurality of reactors; and a plurality of plasma supply units connected to the plurality of reactors. Each of the plasma supply units includes: a plasma power supplier; a plurality of diodes connected to the plasma power supplier; and a reverse voltage driver connected to the plurality of diodes through respectively corresponding switches. | 08-01-2013 |
20130126515 | RADIATION SHIELDING FOR A SUBSTRATE HOLDER - A reaction chamber including a substrate supporting member positioned within the reaction chamber, the reaction chamber having a first region and a second region, a shield positioned within the second chamber and movable with the substrate supporting member, and wherein the shield is adjacent at least a bottom surface of the substrate supporting member. | 05-23-2013 |
20120302055 | DEPOSITION AND REDUCTION OF MIXED METAL OXIDE THIN FILMS - In one aspect, methods of forming mixed metal thin films comprising at least two different metals are provided. In some embodiments, a mixed metal oxide thin film is formed by atomic layer deposition and subsequently reduced to a mixed metal thin film. Reduction may take place, for example, in a hydrogen atmosphere. The presence of two or more metals in the mixed metal oxide allows for reduction at a lower reduction temperature than the reduction temperature of the individual oxides of the metals in the mixed metal oxide film. | 11-29-2012 |
20120263876 | DEPOSITION OF SILICON DIOXIDE ON HYDROPHOBIC SURFACES - Methods for forming silicon dioxide thin films on hydrophobic surfaces are provided. For example, in some embodiments, silicon dioxide films are deposited on porous, low-k materials. The silicon dioxide films can be deposited using a catalyst and a silanol. In some embodiments, an undersaturated dose of one or more of the reactants can be used in forming a pore-sealing layer over a porous material. | 10-18-2012 |