| Alta Devices, Inc. Patent applications |
| Patent application number | Title | Published |
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| 20160130724 | HEATING LAMP SYSTEM - Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a heating lamp assembly for a vapor deposition reactor system is provided which includes a lamp housing disposed on an upper surface of a support base and containing a first lamp holder and a second lamp holder and a plurality of lamps extending from the first lamp holder to the second lamp holder. The plurality of lamps may have split filament lamps and/or non-split filament lamps, and in some examples, split and non-split filament may be alternately disposed between the first and second lamp holders. A reflector may be disposed on the upper surface of the support base between the first and second lamp holders. The reflector may contain gold or a gold alloy. | 05-12-2016 |
| 20160079121 | PERFORATION OF FILMS FOR SEPARATION - A method for separation of semiconductor device cell units from fabricated large-area cell units, together with a corresponding tile unit structure, are provided in which the tile unit is cut along cell unit boundaries while leaving intact a set of specified tab sections distributed along the cell unit boundaries. The tile unit may be a multi-layer composite of a semiconductor layer with a conductive metallic base supported upon a polymer layer and adhered thereto by an adhesive film, wherein tab sections are cut completely through the semiconductor layer and its metallic base from above and may also be cut partially through the polymer layer from below, leaving at least a portion of the polymer layer in place at tab sections. Tile units can be handled such that component cell units are held together by the tab sections, until a physical final separation of selected cell units. | 03-17-2016 |
| 20160047042 | TILED SHOWERHEAD FOR A SEMICONDUCTOR CHEMICAL VAPOR DEPOSITION REACTOR - A showerhead for a semiconductor processing reactor formed by an array of showerhead tiles. Each showerhead tile has a plurality of process gas apertures, which may be in a central area of the tile or may extend over the entire tile. Each showerhead tile can be dimensioned for processing a respective substrate or a plurality of substrates or the array can be dimensioned for processing a substrate. An exhaust region surrounds the process gas apertures. The exhaust region has at least one exhaust aperture, and may include an exhaust slot, a plurality of connected exhaust slots or a plurality of exhaust apertures. The exhaust region surrounds the array of showerhead tiles, or a respective portion of the exhaust region surrounds the plurality of process gas apertures in each showerhead tile or group of showerhead tiles. A gas curtain aperture may be between the exhaust region and the process gas apertures of one of the showerhead tiles or adjacent to the central area of the tile. | 02-18-2016 |
| 20140251547 | EPITAXIAL LIFT OFF SYSTEMS AND METHODS - Epitaxial lift off systems and methods are presented. In one embodiment a tape is disposed on the opposite side of the epitaxial material than the substrate is used to hold the epitaxial material during the etching and removal steps of the ELO process. In various embodiments, the apparatus for removing the ELO film from the substrates without damaging the ELO film may include an etchant reservoir, substrate handling and tape handling mechanisms, including mechanisms to manipulate (e.g., cause tension, peel, widen the etch gap, etc.) the lift off component during the lift off process. | 09-11-2014 |
| 20140158307 | SYSTEM AND METHOD FOR IMPROVED EPITAXIAL LIFT OFF - An apparatus, system and method for performing ELO are disclosed. Device assemblies are contemporaneously etched in a stacked arrangement. Each device assembly may be placed in a respective tray, where the trays are overlapped and spaced apart from one another. In this manner, more device assemblies can be etched per unit area compared to conventional systems. Further, by stacking device assemblies during etching, the yield can be improved and/or the cost of the etch tank and associated hardware can be reduced. | 06-12-2014 |
| 20130270589 | OPTOELECTRONIC DEVICE WITH NON-CONTINUOUS BACK CONTACTS - An optoelectronic device is disclosed. The optoelectronic device comprises a semiconductor structure; a plurality of contacts on the front side of the semiconductor structure; and a plurality of non-continuous metal contacts on a back side of the semiconductor structure. In an embodiment, a plurality of non-continuous back contacts on an optoelectronic device improve the reflectivity and reduce the losses associated with the back surface of the device. | 10-17-2013 |
| 20130206213 | PHOTOVOLTAIC MODULE CONTAINING SHINGLED PHOTOVOLTAIC TILES AND FABRICATION PROCESSES THEREOF - A photovoltaic module is disclosed. The photovoltaic module comprises an array of shingled tiles disposed between a transparent front substrate and a back substrate, wherein the array of shingled tiles comprises a plurality of photovoltaic tiles in electrically contact with each other and positioned in overlapping rows. Each photovoltaic tile comprises a front metallic contact layer disposed on an epitaxial film stack disposed on a back metallic contact layer disposed on a support carrier layer. The photovoltaic module includes at least one busbar in electrical contact with the array of shingled tiles and disposed between the front and back glass substrates. The photovoltaic module also includes an encapsulation layer between the front and back glass substrates. | 08-15-2013 |
| 20130153013 | PHOTOVOLTAIC DEVICE - Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. One embodiment of the present invention provides a photovoltaic (PV) device. The PV device comprises an absorber layer made of a compound semiconductor; and an emitter layer located closer than the absorber layer to a first side of the device. The PV device includes a p-n junction formed between the emitter layer and the absorber layer, the p-n junction causing a voltage to be generated in the device in response to the device being exposed to light at a second side of the device. Such innovations may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells. | 06-20-2013 |
| 20130098289 | METHODS AND APPARATUS FOR A CHEMICAL VAPOR DEPOSITION REACTOR - Embodiments of the invention generally relate to a chemical vapor deposition system and related method of use. In one embodiment, the system includes a reactor lid assembly having a body, a track assembly having a body and a guide path located along the body, and a heating assembly operable to heat the substrate as the substrate moves along the guide path. The body of the lid assembly and the body of the track assembly are coupled together to form a gap that is configured to receive a substrate. In another embodiment, a method of forming layers on a substrate using the chemical vapor deposition system includes introducing the substrate into a guide path, depositing a first layer on the substrate and depositing a second layer on the substrate, while the substrate moves along the guide path; and preventing mixing of gases between the first deposition step and the second deposition step. | 04-25-2013 |
| 20130052371 | MOVABLE LINER ASSEMBLY FOR A DEPOSITION ZONE IN A CVD REACTOR - A chemical vapor deposition (CVD) reactor comprises a deposition zone, a substrate carrier and a liner assembly. The deposition zone is constructed so as to have a positive pressure reactant gases fixed showerhead introducing reactant gas supporting thin film CVD deposition. The substrate carrier movably supports a substrate and the liner assembly within the deposition zone and is heated so as to be subjected to a CVD process. The liner assembly partly encloses selected portions of the deposition zone, particularly portions of the substrate carrier and thereby enclose a hot zone surrounding a substrate to be processed so as to retain heat in that zone but allows gas flow radially outwardly toward walls of a surrounding cold-wall reactor with exhaust ports surrounding the deposition zone that exhaust spent reactant gases. The liner assembly is a sink for solid reaction byproducts while gaseous reaction byproducts are pumped out at the exhaust ports. The liner assembly is linearly movable away from the fixed showerhead. | 02-28-2013 |
| 20130052346 | CVD REACTOR WITH GAS FLOW VIRTUAL WALLS - A chemical vapor deposition reactor has one or more deposition zones bounded by gas flow virtual walls, within a housing having closed walls. Each deposition zone supports chemical vapor deposition onto a substrate. Virtual walls formed of gas flows laterally surround the deposition zone, including a first gas flow of reactant gas from within the deposition zone and a second gas flow of non-reactant gas from a region laterally external to the deposition zone. The first and second gas flows are mutually pressure balanced to form the virtual walls. The virtual walls are formed by merging of gas flows at the boundary of each deposition zone. The housing has an exhaust valve to prevent pressure differences or pressure build up that would destabilize the virtual walls. Cross-contamination is reduced, between the deposition zones and the closed walls of the housing or an interior region of the housing outside the gas flow virtual walls. | 02-28-2013 |
| 20130047922 | THERMAL BRIDGE FOR CHEMICAL VAPOR DEPOSITION REACTORS - A thermal bridge connecting first and second processing zones and a method for transferring a work piece from a first to a second processing zone by way of the thermal bridge are disclosed. A work piece, transportable from the first to the second processing zone on or above the thermal bridge, is maintained at a temperature between the temperatures of the processing zones. The thermal bridge member features a thermally conductive transport member for the work piece supported over an infrared transmissive member that is insulative to heat conduction and convection. The bridge insulative member extends between the first and second processing zones or between reactors. An infrared radiation beam source emits infrared radiation which passes through the bridge insulative member to the transport member, heating the member. In an alternate embodiment, the transport member may be heated directly. A liner member may be mounted above the bridge member to retain heat. | 02-28-2013 |
| 20120305059 | PHOTON RECYCLING IN AN OPTOELECTRONIC DEVICE - An optoelectronic semiconductor device includes an absorber layer made of a direct bandgap semiconductor and having only one type of doping. An emitter layer is located closer than the absorber layer to a back side of the device, the emitter layer made of a different material than the absorber layer and having a higher bandgap than the absorber layer. A heterojunction is formed between the emitter layer and the absorber layer, and a p-n junction is formed between the emitter layer and the absorber layer at a location offset from the heterojunction. The p-n junction causes a voltage to be generated in the device in response to the device being exposed to light at a front side of the device. The device also includes an n-metal contact disposed on a front side of the device and a p-metal contact disposed on the back side of the device. | 12-06-2012 |
| 20120252159 | METHODS FOR FORMING OPTOELECTRONIC DEVICES INCLUDING HETEROJUNCTION - Embodiments generally relate to optoelectronic semiconductor devices such as photovoltaic cells. In one aspect, a method for forming a device includes forming an absorber layer made of gallium arsenide (GaAs) and having one type of doping, and forming an emitter layer made of a different material and having a higher bandgap than the absorber layer. An intermediate layer can be formed between emitter and absorber layers. A heterojunction and p-n junction are formed between the emitter layer and the absorber layer, where the p-n junction is formed at least partially within the different material at a location offset from the heterojunction. A majority of the absorber layer can be outside of a depletion region formed by the p-n junction. The p-n junction causes a voltage to be generated in the cell in response to the cell being exposed to light at a front side. | 10-04-2012 |
| 20120204942 | OPTOELECTRONIC DEVICES INCLUDING HETEROJUNCTION AND INTERMEDIATE LAYER - Embodiments generally relate to optoelectronic semiconductor devices such as solar cells. In one aspect, a device includes an absorber layer made of gallium arsenide (GaAs) and having only one type of doping. An emitter layer is located closer than the absorber layer to a back side of the device and is made of a different material and having a higher bandgap than the absorber layer. A heterojunction is formed between the emitter layer and the absorber layer, and a p-n junction is formed between the emitter layer and the absorber layer and at least partially within the different material at a location offset from the heterojunction. An intermediate layer is located between the absorber layer and the emitter layer and provides the offset of the p-n junction from the heterojunction, and includes a graded layer and an ungraded back window layer. | 08-16-2012 |
| 20120199188 | METAL CONTACT FORMATION AND WINDOW ETCH STOP FOR PHOTOVOLTAIC DEVICES - Embodiments of the invention generally relate to photovoltaic devices and more specifically, to metallic contacts disposed on photovoltaic devices and to the fabrication processes for forming such metallic contacts. In one aspect, a method for contact patterning on a photovoltaic device includes providing a semiconductor structure that includes a front contact layer and a window layer underneath the front contact layer, where the window layer also acts as an etch stop layer. At least one metal layer is deposited on the front contact layer, and a resist is applied on portions of the at least one metal layer. The at least one metal layer and the front contact layer are etched through to achieve the desired metallization. | 08-09-2012 |
| 20120199184 | SELF-BYPASS DIODE FUNCTION FOR GALLIUM ARSENIDE PHOTOVOLTAIC DEVICES - Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect. | 08-09-2012 |
| 20120106935 | HEATING LAMP SYSTEM AND METHODS THEREOF - Embodiments of the invention generally relate to apparatuses and methods for chemical vapor deposition (CVD). In one embodiment, a heating lamp assembly for a CVD reactor system is provided which includes a lamp housing disposed on an upper surface of a support base and containing a plurality of lamps extending from a first lamp holder to a second lamp holder. The lamps may have split filament lamps and/or non-split filament lamps, and in some examples, split and non-split filament may be alternately disposed between the first and second lamp holders. A reflector may be disposed on the upper surface of the support base between the first and second lamp holders. In another embodiment, the method includes exposing a lower surface of a wafer carrier to energy emitted from the heating lamp assembly and heating the wafer carrier to a predetermined temperature. | 05-03-2012 |
| 20120104460 | OPTOELECTRONIC DEVICES INCLUDING HETEROJUNCTION - Embodiments of the invention generally relate to optoelectronic semiconductor devices such as photovoltaic devices including solar cells. In one aspect, an optoelectronic semiconductor device includes an absorber layer made of gallium arsenide (GaAs) and having only one type of doping. An emitter layer is located closer than the absorber layer to a back side of the device, the emitter layer made of a different material than the absorber layer and having a higher bandgap than the absorber layer. A heterojunction formed between the emitter layer and the absorber layer, and a p-n junction is formed between the emitter layer and the absorber layer and at least partially within the different material at a location offset from the heterojunction. The p-n junction causes a voltage to be generated in the device in response to the device being exposed to light at a front side of the device. | 05-03-2012 |
| 20120103406 | METALLIC CONTACTS FOR PHOTOVOLTAIC DEVICES AND LOW TEMPERATURE FABRICATION PROCESSES THEREOF - Embodiments of the invention generally relate to photovoltaic devices and more specifically, to the metallic contacts disposed on photovoltaic devices, such as photovoltaic cells, and to the fabrication processes for forming such metallic contacts. The metallic contacts contain a palladium germanium alloy formed at low temperatures during an anneal process. In some embodiments, the photovoltaic cell may be heated to a temperature within a range from about 20° C. to about 275° C. during the anneal process, for example, at about 150° C. for about 30 minutes. In other embodiments, the photovoltaic cell may be heated to a temperature within a range from about 150° C. to about 275° C. for a time period of at least about 0.5 minutes during the anneal process. | 05-03-2012 |
| 20120090548 | WAFER CARRIER TRACK - Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a wafer carrier track for levitating and traversing a wafer carrier within a vapor deposition reactor system is provided which includes upper and lower sections of a track assembly having a gas cavity formed therebetween. A guide path extends along an upper surface of the upper section and between two side surfaces which extend along and above the guide path and parallel to each other. A plurality of gas holes along the guide path extends from the upper surface of the upper section, through the upper section, and into the gas cavity. In some examples, the upper and lower sections of the track assembly may independently contain quartz, and in some examples, may be fused together. | 04-19-2012 |
| 20120067286 | VAPOR DEPOSITION REACTOR SYSTEM AND METHODS THEREOF - Embodiments of the invention generally relate to apparatuses and methods for chemical vapor deposition (CVD) processes. In one embodiment, a CVD reactor has a reactor lid assembly disposed on a reactor body and containing a first showerhead assembly, an isolator assembly, a second showerhead assembly, and an exhaust assembly consecutively and linearly disposed next to each other on a lid support. The CVD reactor further contains first and second faceplates disposed on opposite ends of the reactor body, wherein the first showerhead assembly is disposed between the first faceplate and the isolator assembly and the exhaust assembly is disposed between the second showerhead assembly and the second faceplate. The reactor body has a wafer carrier disposed on a wafer carrier track and a lamp assembly disposed below the wafer carrier track and containing a plurality of lamps which may be utilized to heat wafers disposed on the wafer carrier. | 03-22-2012 |
| 20120067282 | REACTOR LID ASSEMBLY FOR VAPOR DEPOSITION - Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a reactor lid assembly for vapor deposition is provided which includes a first showerhead assembly and an isolator assembly disposed next to each other on a lid support, and a second showerhead assembly and an exhaust assembly disposed next to each other on the lid support, wherein the isolator assembly is disposed between the first and second showerhead assemblies and the second showerhead assembly is disposed between the isolator assembly and the exhaust assembly. | 03-22-2012 |
| 20110308463 | CHEMICAL VAPOR DEPOSITION REACTOR WITH ISOLATED SEQUENTIAL PROCESSING ZONES - A chemical vapor deposition reactor and system has a housing, a substrate transport apparatus and a plurality of fixed processing zones. The processing zones include one or more chemical vapor deposition zones, each having an independent reactant gas supply. Each chemical vapor deposition zone may have a respective showerhead. The substrate transport apparatus moves the substrate along a path from the entrance of the housing to the exit of the housing, passing sequentially through each of the processing zones. A respective isolation zone between neighboring processing zones functions to prevent mixing of gases between the processing zones. The isolation zone has a gas dual flow path directing gas flows in opposing directions. The isolation zone may include a gas inflow isolator coupled via a gas dual flow path to respective exhaust ports of respective process zones. The isolation zone may include a respective isolation curtain having a split gas flow. | 12-22-2011 |
| 20110268880 | REACTOR CLEAN - A method and apparatus for performing chemical vapor deposition (CVD) processes is provided. In one embodiment, the apparatus comprises a reactor body having a processing region, comprising a wafer carrier track having a wafer carrier disposed thereon, at least one sidewall having an exhaust assembly for exhausting gases from the processing region, a lid assembly disposed on the reactor body, comprising a lid support comprising a first showerhead assembly for supplying reactant gases to the processing region, a first isolator assembly for supplying isolation gases to the processing region, a second showerhead assembly for supplying reactant gases to the processing region, and a second isolator assembly for supplying isolation gases to the processing region, wherein the first showerhead assembly, the first isolator assembly, the second showerhead assembly, and the second isolator assembly are consecutively and linearly disposed next to each other. | 11-03-2011 |
| 20110214805 | Epitaxial Lift Off Systems and Methods - Epitaxial lift off systems and methods are presented. In one embodiment a tape is disposed on the opposite side of the epitaxial material than the substrate is used to hold the epitaxial material during the etching and removal steps of the ELO process. In various embodiments, the apparatus for removing the ELO film from the substrates without damaging the ELO film may include an etchant reservoir, substrate handling and tape handling mechanisms, including mechanisms to manipulate (e.g., cause tension, peel, widen the etch gap, etc.) the lift off component during the lift off process. | 09-08-2011 |
| 20110083722 | TEXTURED METALLIC BACK REFLECTOR - Embodiments of the invention generally relate to device fabrication of thin films used as solar devices or other electronic devices, and include textured back reflectors utilized in solar applications. In one embodiment, a method for forming a textured metallic back reflector which includes depositing a metallic layer on a gallium arsenide material within a thin film stack, forming an array of metallic islands from the metallic layer during an annealing process, removing or etching material from the gallium arsenide material to form apertures between the metallic islands, and depositing a metallic reflector layer to fill the apertures and cover the metallic islands. In another embodiment, a textured metallic back reflector includes an array of metallic islands disposed on a gallium arsenide material, a plurality of apertures disposed between the metallic islands and extending into the gallium arsenide material, a metallic reflector layer disposed over the metallic islands, and a plurality of reflector protrusions formed between the metallic islands and extending from the metallic reflector layer and into the apertures formed in the gallium arsenide material. | 04-14-2011 |
| 20110083601 | HIGH GROWTH RATE DEPOSITION FOR GROUP III/V MATERIALS - Embodiments of the invention generally relate processes for epitaxial growing Group III/V materials at high growth rates, such as about 30 μm/hr or greater, for example, about 40 μm/hr, about 50 μm/hr, about 55 μm/hr, about 60 μm/hr, or greater. The deposited Group III/V materials or films may be utilized in solar, semiconductor, or other electronic device applications. In some embodiments, the Group III/V materials may be formed or grown on a sacrificial layer disposed on or over the support substrate during a vapor deposition process. Subsequently, the Group III/V materials may be removed from the support substrate during an epitaxial lift off (ELO) process. The Group III/V materials are thin films of epitaxially grown layers which contain gallium arsenide, gallium aluminum arsenide, gallium indium arsenide, gallium indium arsenide nitride, gallium aluminum indium phosphide, phosphides thereof, nitrides thereof, derivatives thereof, alloys thereof, or combinations thereof. | 04-14-2011 |
| 20110073152 | MIXED WIRING SCHEMES FOR SHADING ROBUSTNESS - A method and apparatus for electrical interconnections utilized in devices adapted to capture solar energy, such as solar cells, solar panels and/or solar arrays is described. In one embodiment, a solar panel is described. The solar panel includes a first plurality of solar devices positioned in a center of the solar panel in electrical communication with a first circuit, and a second plurality of solar devices surrounding the first plurality of solar devices, the second plurality of solar devices in electrical communication with a second circuit, the second circuit being different than the first circuit. | 03-31-2011 |
| 20110056553 | PHOTOVOLTAIC DEVICE - Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. A photovoltaic (PV) unit, according to embodiments of the invention, may have a very thin absorber layer produced by epitaxial lift-off (ELO), all electrical contacts positioned on the back side of the PV device to avoid shadowing, and/or front side and back side light trapping employing a diffuser and a reflector to increase absorption of the photons impinging on the front side of the PV unit. Several PV units may be combined into PV banks, and an array of PV banks may be connected to form a PV module with thin strips of metal or conductive polymer applied at low temperature. Such innovations may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells. | 03-10-2011 |
| 20110056546 | THIN ABSORBER LAYER OF A PHOTOVOLTAIC DEVICE - Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. In one embodiment of a photovoltaic (PV) device, the PV device generally includes an n-doped layer and a p | 03-10-2011 |
| 20110048532 | PHOTOVOLTAIC DEVICE - Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. A photovoltaic (PV) unit, according to embodiments of the invention, may have a very thin absorber layer produced by epitaxial lift-off (ELO), all electrical contacts positioned on the back side of the PV device to avoid shadowing, and/or front side and back side light trapping employing a diffuser and a reflector to increase absorption of the photons impinging on the front side of the PV unit. Several PV units may be combined into PV banks, and an array of PV banks may be connected to form a PV module with thin strips of metal or conductive polymer applied at low temperature. Such innovations may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells. | 03-03-2011 |
| 20110048519 | PHOTOVOLTAIC DEVICE WITH INCREASED LIGHT TRAPPING - Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. A photovoltaic (PV) device may incorporate front side and/or back side light trapping techniques in an effort to absorb as many of the photons incident on the front side of the PV device as possible in the absorber layer. The light trapping techniques may include a front side antireflective coating, multiple window layers, roughening or texturing on the front and/or the back sides, a back side diffuser for scattering the light, and/or a back side reflector for redirecting the light into the interior of the PV device. With such light trapping techniques, more light may be absorbed by the absorber layer for a given amount of incident light, thereby increasing the efficiency of the PV device. | 03-03-2011 |
| 20110041904 | THIN ABSORBER LAYER OF A PHOTOVOLTAIC DEVICE - Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. In one embodiment of a photovoltaic (PV) device, the PV device generally includes an n-doped layer and a p | 02-24-2011 |
| 20100229793 | SHOWERHEAD FOR VAPOR DEPOSITION - Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a showerhead assembly is provided which includes a body having a centralized channel extending through upper and lower portions of the body and extending parallel to a central axis of the body. The showerhead assembly contains an optional diffusion plate having a first plurality of holes and disposed within the centralized channel, an upper tube plate having a second plurality of holes and disposed within the centralized channel below the diffusion plate, a lower tube plate having a third plurality of holes and disposed within the centralized channel below the upper tube plate, and a plurality of tubes extending from the upper tube plate to the lower tube plate. Each tube is coupled to and in fluid communication with individual holes of the upper and lower tube plates. | 09-16-2010 |
| 20100219509 | TILED SUBSTRATES FOR DEPOSITION AND EPITAXIAL LIFT OFF PROCESSES - Embodiments of the invention generally relate to epitaxial lift off (ELO) films and methods for producing such films. Embodiments provide a method to simultaneously and separately grow a plurality of ELO films or stacks on a common support substrate which is tiled with numerous epitaxial growth substrates or surfaces. Thereafter, the ELO films are removed from the epitaxial growth substrates by an etching step during an ELO process. The tiled growth substrate contains the epitaxial growth substrates disposed on the support substrate may be reused to grow further ELO films. In one embodiment, a tiled growth substrate is provided which includes two or more gallium arsenide growth substrates separately disposed on a support substrate having a coefficient of thermal expansion within a range from about 5×10 | 09-02-2010 |
| 20100212591 | REACTOR LID ASSEMBLY FOR VAPOR DEPOSITION - Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a reactor lid assembly for vapor deposition is provided which includes a first showerhead assembly and an isolator assembly disposed next to each other on a lid support, and a second showerhead assembly and an exhaust assembly disposed next to each other on the lid support, wherein the isolator assembly is disposed between the first and second showerhead assemblies and the second showerhead assembly is disposed between the isolator assembly and the exhaust assembly. | 08-26-2010 |
| 20100209626 | METHODS FOR HEATING WITH LAMPS - Embodiments of the invention generally relate to methods for chemical vapor deposition (CVD) processes. In one embodiment, a method for heating a substrate or a substrate susceptor within a vapor deposition reactor system includes exposing a lower surface of a substrate susceptor, such as a wafer carrier, to energy emitted from a heating lamp assembly, and heating the substrate susceptor to a predetermined temperature. The heating lamp assembly generally contains a lamp housing disposed on an upper surface of a support base and contains at least one lamp holder, a plurality of lamps extending from the lamp holder, and a reflector disposed on the upper surface of the support base, next to the lamp holder, and below the lamps. The plurality of lamps may have split filament lamps and/or non-split filament lamps for heating inner and outer portions of the substrate susceptor. | 08-19-2010 |
| 20100209620 | METHOD FOR VAPOR DEPOSITION - Embodiments of the invention generally relate to methods for chemical vapor deposition (CVD) processes. In one embodiment, a method for processing a wafer within a vapor deposition reactor is provided which includes heating at least one wafer disposed on a wafer carrier by exposing a lower surface of the wafer carrier to radiation emitted from a lamp assembly and flowing a liquid through a passageway extending throughout the reactor to maintain the reactor lid assembly at a predetermined temperature, such as within a range from about 275° C. to about 325° C. The method further includes traversing the wafer carrier along a wafer carrier track through at least a chamber containing a showerhead assembly and an isolator assembly and another chamber containing a showerhead assembly and an exhaust assembly, and removing gases from the reactor through the exhaust assembly. | 08-19-2010 |
| 20100209082 | HEATING LAMP SYSTEM - Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a heating lamp assembly for a vapor deposition reactor system is provided which includes a lamp housing disposed on an upper surface of a support base and containing a first lamp holder and a second lamp holder and a plurality of lamps extending from the first lamp holder to the second lamp holder. The plurality of lamps may have split filament lamps and/or non-split filament lamps, and in some examples, split and non-split filament may be alternately disposed between the first and second lamp holders. A reflector may be disposed on the upper surface of the support base between the first and second lamp holders. The reflector may contain gold or a gold alloy. | 08-19-2010 |
| 20100206235 | WAFER CARRIER TRACK - Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a wafer carrier track for levitating and traversing a wafer carrier within a vapor deposition reactor system is provided which includes upper and lower sections of a track assembly having a gas cavity formed therebetween. A guide path extends along an upper surface of the upper section and between two side surfaces which extend along and above the guide path and parallel to each other. A plurality of gas holes along the guide path extends from the upper surface of the upper section, through the upper section, and into the gas cavity. In some examples, the upper and lower sections of the track assembly may independently contain quartz, and in some examples, may be fused together. | 08-19-2010 |
| 20100206229 | VAPOR DEPOSITION REACTOR SYSTEM - Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a CVD reactor is provided which includes a reactor lid assembly disposed on a reactor body and containing a first showerhead assembly, an isolator assembly, a second showerhead assembly, and an exhaust assembly consecutively and linearly disposed next to each other on a lid support. The CVD reactor further contains first and second faceplates disposed on opposite ends of the reactor body, wherein the first showerhead assembly is disposed between the first faceplate and the isolator assembly and the exhaust assembly is disposed between the second showerhead assembly and the second faceplate. The reactor body has a wafer carrier disposed on a wafer carrier track and a lamp assembly disposed below the wafer carrier track and containing a plurality of lamps which may be utilized to heat wafers disposed on the wafer carrier. | 08-19-2010 |
| 20100151689 | TAPE-BASED EPITAXIAL LIFT OFF APPARATUSES AND METHODS - Embodiments of the invention generally relate to apparatuses and methods for producing epitaxial thin films and devices by epitaxial lift off (ELO) processes. In one embodiment, a method for forming thin film devices during an ELO process is provided which includes coupling a plurality of substrates to an elongated support tape, wherein each substrate contains an epitaxial film disposed over a sacrificial layer disposed over a wafer, exposing the substrates to an etchant during an etching process while moving the elongated support tape, and etching the sacrificial layers and peeling the epitaxial films from the wafers while moving the elongated support tape. Embodiments also include several apparatuses, continuous-type as well as a batch-type apparatuses, for forming the epitaxial thin films and devices, including an apparatus for removing the support tape and epitaxial films from the wafers on which the epitaxial films were grown. | 06-17-2010 |
| 20100147370 | MULTIPLE STACK DEPOSITION FOR EPITAXIAL LIFT OFF - Embodiments of the invention are provided for a thin film stack containing a plurality of epitaxial stacks disposed on a substrate and a method for forming such a thin film stack. In one embodiment, the epitaxial stack contains a first sacrificial layer disposed over the substrate, a first epitaxial film disposed over the first sacrificial layer, a second sacrificial layer disposed over the first epitaxial film, and a second epitaxial film disposed over the second sacrificial layer. The thin film stack may further contain additional epitaxial films disposed over sacrificial layers. Generally, the epitaxial films contain gallium arsenide alloys and the sacrificial layers contain aluminum arsenide alloys. Methods provide the removal of the epitaxial films from the substrate by etching away the sacrificial layers during an epitaxial lift off (ELO) process. The epitaxial films are useful as photovoltaic cells, laser diodes, or other devices or materials. | 06-17-2010 |
| 20100120233 | Continuous Feed Chemical Vapor Deposition - Embodiments of the invention generally relate to a method for forming a multi-layered material during a continuous chemical vapor deposition (CVD) process. In one embodiment, a method for forming a multi-layered material during a continuous CVD process is provided which includes continuously advancing a plurality of wafers through a deposition system having at least four deposition zones. Multiple layers of materials are deposited on each wafer, such that one layer is deposited at each deposition zone. The methods provide advancing each wafer through each deposition zone while depositing a first layer from the first deposition zone, a second layer from the second deposition zone, a third layer from the third deposition zone, and a fourth layer from the fourth deposition zone. Embodiments described herein may be utilized to form an assortment of materials on wafers or substrates, especially for forming Group III/V materials on GaAs wafers. | 05-13-2010 |
| 20100116784 | MESA ETCH METHOD AND COMPOSITION FOR EPITAXIAL LIFT OFF - Embodiments of the invention generally relate to compositions of mesa etch solutions and methods for mesa etching materials on a wafer during an epitaxial lift off (ELO) process. The wafer usually contains an etch stop layer disposed thereon and a laminated epitaxial material disposed on the etch stop layer. In one embodiment, an etch process includes exposing the wafer to a non-selective etch solution and subsequently exposing the wafer to a selective etch solution while peeling the laminated epitaxial material from the wafer. The selective etch solution may contain succinic acid, an ammonium hydroxide compound, and an oxidizing agent, such as hydrogen peroxide. The selective etch solution may have a GaAs/AlAs selectivity of about 600, about 1,000, about 1,400, or greater. The non-selective etch solution may be an aqueous solution containing sulfuric acid and hydrogen peroxide. | 05-13-2010 |
| 20100001374 | EPITAXIAL LIFT OFF STACK HAVING A MULTI-LAYERED HANDLE AND METHODS THEREOF - Embodiments of the invention generally relate to epitaxial lift off (ELO) thin films and devices and methods for forming such films and devices. In one embodiment, a method for forming an ELO thin film includes depositing an epitaxial material over a sacrificial layer on a substrate, adhering a multi-layered support handle onto the epitaxial material, and removing the sacrificial layer during an etching process. The etching process further includes peeling the epitaxial material from the substrate and forming an etch crevice therebetween while maintaining compression in the epitaxial material. The method further provides that the multi-layered support handle contains a stiff support layer adhered to the epitaxial material, a soft support layer adhered to the stiff support layer, and a handle plate adhered to the soft support layer. In one example, the stiff support layer may contain multiple inorganic layers, such as metal layers, dielectric layers, or combinations thereof. | 01-07-2010 |
| 20100001316 | EPITAXIAL LIFT OFF STACK HAVING A NON-UNIFORM HANDLE AND METHODS THEREOF - Embodiments of the invention generally relate to epitaxial lift off (ELO) thin films and devices and methods used to form such films and devices. In one embodiment, a method for forming a thin film material during an epitaxial lift off process is provided which includes forming an epitaxial material over a sacrificial layer on a substrate, adhering a non-uniform support handle onto the epitaxial material, and removing the sacrificial layer during an etching process. The etching process further includes peeling the epitaxial material from the substrate while forming an etch crevice therebetween and bending the support handle to form compression in the epitaxial material during the etching process. In one example, the non-uniform support handle contains a wax film having a varying thickness. | 01-07-2010 |
| 20090325367 | METHODS AND APPARATUS FOR A CHEMICAL VAPOR DEPOSITION REACTOR - Embodiments of the invention generally relate to a chemical vapor deposition system and related method of use. In one embodiment, the system includes a reactor lid assembly having a body, a track assembly having a body and a guide path located along the body, and a heating assembly operable to heat the substrate as the substrate moves along the guide path. The body of the lid assembly and the body of the track assembly are coupled together to form a gap that is configured to receive a substrate. In another embodiment, a method of forming layers on a substrate using the chemical vapor deposition system includes introducing the substrate into a guide path, depositing a first layer on the substrate and depositing a second layer on the substrate, while the substrate moves along the guide path; and preventing mixing of gases between the first deposition step and the second deposition step. | 12-31-2009 |
| 20090324379 | METHODS AND APPARATUS FOR A CHEMICAL VAPOR DEPOSITION REACTOR - Embodiments of the invention generally relate to a levitating substrate carrier or support. In one embodiment, a substrate carrier for supporting and carrying at least one substrate or wafer is provided which includes a substrate carrier body containing an upper surface and a lower surface, and at least one indentation pocket disposed within the lower surface. In another embodiment, the substrate carrier includes at least open indentation area within the upper surface, and at least two indentation pockets disposed within the lower surface. Each indentation pocket may be rectangular and have four side walls extending substantially perpendicular to the lower surface. In another embodiment, a method for levitating substrates disposed on a substrate carrier is provided which includes exposing the lower surface of a substrate carrier to a gas stream, forming a gas cushion under the substrate carrier, levitating the substrate carrier within a processing chamber, and moving the substrate carrier along a path within the processing chamber. | 12-31-2009 |
| 20090321886 | EPITAXIAL LIFT OFF STACK HAVING A UNIDIRECTIONALLY SHRUNK HANDLE AND METHODS THEREOF - Embodiments of the invention generally relate to epitaxial lift off (ELO) thin films and devices and methods used to form such films and devices. In one embodiment, a method for forming an ELO thin film is provided which includes depositing an epitaxial material over a sacrificial layer on a substrate, adhering a unidirectionally induced-shrinkage support handle onto the epitaxial material, and shrinking the support handle tangential to reinforcement fibers therein to form tension in the support handle and compression in the epitaxial material during the shrinking process. The unidirectionally induced-shrinkage support handle contains a shrinkable material and reinforcement fibers extending unidirectional throughout the shrinkable material. The method further includes removing the sacrificial layer during an etching process, peeling the epitaxial material from the substrate while forming an etch crevice therebetween, and bending the support handle to have substantial curvature. | 12-31-2009 |
| 20090321885 | EPITAXIAL LIFT OFF STACK HAVING A UNIVERSALLY SHRUNK HANDLE AND METHODS THEREOF - Embodiments of the invention generally relate to epitaxial lift off (ELO) thin films and devices and methods used to form such films and devices. In one embodiment, a method for forming an ELO thin film is provided which includes depositing an epitaxial material over a sacrificial layer on a substrate, adhering a universally shrinkable support handle onto the epitaxial material, wherein the universally shrinkable support handle contains a shrinkable material, and shrinking the support handle to form tension in the support handle and compression in the epitaxial material during a shrinking process. The method further includes removing the sacrificial layer during an etching process, peeling the epitaxial material from the substrate while forming an etch crevice therebetween, and bending the support handle to have substantial curvature. | 12-31-2009 |
| 20090321881 | EPITAXIAL LIFT OFF STACK HAVING A PRE-CURVED HANDLE AND METHODS THEREOF - Embodiments of the invention generally relate to epitaxial lift off (ELO) thin films and devices and methods used to form such films and devices. In one embodiment, a method for forming an ELO thin film is provided which includes depositing an epitaxial material over a sacrificial layer on a substrate, adhering a flattened, pre-curved support handle onto the epitaxial material, and removing the sacrificial layer during an etching process. The etching process includes bending the pre-curved support handle to have substantial curvature while peeling the epitaxial material from the substrate and forming an etch crevice therebetween. Compression is maintained within the epitaxial material during the etching process. The flattened, pre-curved support handle may be formed by flattening a pre-curved support material. | 12-31-2009 |
