4D-S PTY. LTD. Patent applications |
Patent application number | Title | Published |
20130248812 | SYSTEMS AND METHODS FOR FABRICATING SELF-ALIGNED MEMORY CELL - Systems and methods are disclosed to form a resistive random access memory (RRAM) by forming a first metal electrode layer; depositing an insulator above the metal electrode layer and etching the insulator to expose one or more metal portions; depositing a Pr | 09-26-2013 |
20130224888 | SYSTEMS AND METHODS FOR FABRICATING SELF-ALIGNED RESISTIVE/MAGNETIC MEMORY CELL - Systems and methods are disclosed to form a resistive random access memory (RRAM) by forming a first metal electrode layer; depositing an insulator above the metal electrode layer and etching the insulator to expose one or more metal portions; depositing a Pr | 08-29-2013 |
20130109150 | SYSTEMS AND METHODS FOR FABRICATING SELF-ALIGNED MEMORY CELL | 05-02-2013 |
20120205611 | HETEROJUNCTION OXIDE NON-VOLATILE MEMORY DEVICE - A memory device includes a first metal layer and a first metal oxide layer coupled to the first metal layer. The memory device includes a second metal oxide layer coupled to the first metal oxide layer and a second metal layer coupled to the second metal oxide layer. The formation of the first metal oxide layer has a Gibbs free energy that is lower than the Gibbs free energy for the formation of the second metal oxide layer | 08-16-2012 |
20120199804 | HETEROJUNCTION OXIDE NON-VOLATILE MEMORY DEVICE - A memory device includes a first metal layer and a first metal oxide layer coupled to the first metal layer. The memory device includes a second metal oxide layer coupled to the first metal oxide layer and a second metal layer coupled to the second metal oxide layer. The formation of the first metal oxide layer has a Gibbs free energy that is lower than the Gibbs free energy for the formation of the second metal oxide layer | 08-09-2012 |
20120195098 | METHOD AND SYSTEM FOR UTILIZING PEROVSKITE MATERIAL FOR CHARGE STORAGE AND AS A DIELECTRIC - A memory device is disclosed. In a first aspect the memory comprises a first doped awell; two wells of opposite doping implanted in the first doped well; and two bitlines located on top of the two wells. The memory includes a Perovsite material on top of the first doped well and located between two bitlines; and a wordline located above the Perovskite material. In a second aspect the memory comprises a first doped well; two wells of opposite doping implanted in the first doped well; and two bitlines located on top of the two wells. The memory includes a Perovskite material located within one of the bitlines and a wordline located above the first doped well and located between the two bitlines. | 08-02-2012 |
20120195097 | METHOD AND SYSTEM FOR UTILIZING PEROVSKITE MATERIAL FOR CHARGE STORAGE AND AS A DIELECTRIC - A memory device is disclosed. In a first aspect the memory comprises a first doped awell; two wells of opposite doping implanted in the first doped well; and two bitlines located on top of the two wells. The memory includes a Perovsite material on top of the first doped well and located between two bitlines; and a wordline located above the Perovskite material. In a second aspect the memory comprises a first doped well; two wells of opposite doping implanted in the first doped well; and two bitlines located on top of the two wells. The memory includes a Perovskite material located within one of the bitlines and a wordline located above the first doped well and located between the two bitlines. | 08-02-2012 |
20120122290 | SYSTEMS AND METHODS FOR FABRICATING SELF-ALIGNED MEMORY CELL - Systems and methods are disclosed to form a resistive random access memory (RRAM) by forming a first metal electrode layer; depositing an insulator above the metal electrode layer and etching the insulator to expose one or more metal portions; depositing a Pr | 05-17-2012 |
20100276655 | VOLTAGE EXCITED PIEZOELECTRIC RESISTANCE MEMORY CELL SYSTEM - The present invention discloses a memory system comprising a plurality of crystals, and at least two conductors. The at least two conductors being orthogonal to each other. Wherein at least one of the plurality of crystals are bounded by the orthogonal intersection of the at least two conductors. | 11-04-2010 |
20090188790 | CONCENTRIC HOLLOW CATHODE MAGNETRON SPUTTER SOURCE - A new sputter source is disclosed that allows for high rates of deposition at pressures one or two orders of magnitude lower than has previously been obtained. This results in denser films with reduced ion and electron damage to the substrate. | 07-30-2009 |