Patent application number | Description | Published |
20090014710 | NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY APPARATUS, AND METHOD OF MANUFACTURE THEREOF - A lower electrode layer | 01-15-2009 |
20100014343 | NONVOLATILE MEMORY APPARATUS AND NONVOLATILE DATA STORAGE MEDIUM - [Objective] A nonvolatile memory apparatus and a nonvolatile data storage medium of the present invention, including nonvolatile memory elements each of which changes its resistance in response to electric pulses applied, comprises a first write circuit ( | 01-21-2010 |
20100046270 | RESISTANCE VARIABLE MEMORY APPARATUS - A resistance variable memory apparatus ( | 02-25-2010 |
20100061142 | MEMORY ELEMENT AND MEMORY APPARATUS - Memory elements ( | 03-11-2010 |
20100110766 | NONVOLATILE MEMORY APPARATUS AND METHOD FOR WRITING DATA IN NONVOLATILE MEMORY APPARATUS - A nonvolatile memory apparatus comprises a memory array ( | 05-06-2010 |
20100188884 | NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY APPARATUS, AND METHOD OF WRITING DATA TO NONVOLATILE MEMORY ELEMENT - A nonvolatile memory element comprises a first electrode ( | 07-29-2010 |
20100200852 | NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY APPARATUS, AND METHOD OF MANUFACTURE THEREOF - A lower electrode layer | 08-12-2010 |
20100207094 | NONVOLATILE MEMORY ELEMENT, AND NONVOLATILE SEMICONDUCTOR DEVICE USING THE NONVOLATILE MEMORY ELEMENT - A nonvolatile memory element of the present invention comprises a first electrode ( | 08-19-2010 |
20100225438 | VARIABLE RESISTANCE ELEMENT, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING VARIABLE RESISTANCE ELEMENT - A method for manufacturing a variable resistance element includes the steps of: depositing a variable resistance material ( | 09-09-2010 |
20100259966 | NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY APPARATUS, AND NONVOLATILE SEMICONDUCTOR APPARATUS - A nonvolatile memory element comprises a first electrode ( | 10-14-2010 |
20110001109 | NONVOLATILE MEMORY ELEMENT - A nonvolatile memory element ( | 01-06-2011 |
20110051500 | NONVOLATILE MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE - Provided is a nonvolatile memory element which is capable of performing a stable resistance change operation at a low breakdown voltage. | 03-03-2011 |
20110075469 | RESISTANCE VARIABLE NONVOLATILE MEMORY DEVICE - Each of memory cells (MC) includes one transistor and one resistance variable element. The transistor includes a first main terminal, a second main terminal and a control terminal. The resistance variable element includes a first electrode, a second electrode and a resistance variable layer provided between the first electrode and the second electrode. A first main terminal of one of two adjacent memory cells is connected to a second main terminal of the other memory cell, to form a series path (SP) sequentially connecting main terminals of the plurality of memory cells in series. Each of the memory cells is configured such that the control terminal is a part of a first wire (WL) associated with the memory cell or is connected to the first wire associated with the memory cell, the second electrode is a part of a second wire (SL) associated with the memory cell or is connected to the second wire associated with the memory cell; and the first electrode is a part of a series path (SP) associated with the memory cell or is connected to the series path associated with the memory cell. | 03-31-2011 |
20110103132 | NONVOLATILE MEMORY ELEMENT AND SEMICONDUCTOR MEMORY DEVICE INCLUDING NONVOLATILE MEMORY ELEMENT - Provided are a nonvolatile memory element which is capable of effectively preventing an event that when a failure occurs in a certain nonvolatile memory element, data cannot be written to and read from another nonvolatile memory element belonging to the same column or row as that to which the nonvolatile memory element in a failed state belongs, and a semiconductor memory device including the nonvolatile memory element. | 05-05-2011 |
20110233510 | NONVOLATILE MEMORY ELEMENT - A nonvolatile memory element of the present invention comprises a first electrode ( | 09-29-2011 |
20110233511 | NONVOLATILE MEMORY ELEMENT AND MANUFACTURING METHOD THEREOF - A nonvolatile memory element ( | 09-29-2011 |
20120104351 | NON-VOLATILE MEMORY CELL, NON-VOLATILE MEMORY CELL ARRAY, AND METHOD OF MANUFACTURING THE SAME - A stacking structure in which a stacked body ( | 05-03-2012 |
20120319072 | METHOD FOR MANUFACTURING NON-VOLATILE MEMORY DEVICE, NON-VOLATILE MEMORY ELEMENT, AND NON-VOLATILE MEMORY DEVICE - A manufacturing method for manufacturing, with a simple process, a non-volatile memory apparatus having a stable memory performance includes: (a) forming a stacking-structure body above a substrate by alternately stacking conductive layers comprising a transition metal and interlayer insulating films comprising an insulating material; (b) forming a contact hole penetrating through the stacking-structure body to expose part of each of the conductive layers; (c) forming variable resistance layers by oxidizing the part of each of the conductive layers, the part being exposed in the contact hole, and each of the variable resistance layers having a resistance value that reversibly changes according to an application of an electric signal; and (d) forming a pillar electrode in the contact hole by embedding a conductive material in the contact hole, the pillar electrode being connected to each of the variable resistance layers. | 12-20-2012 |
20120327702 | NONVOLATILE MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE - A nonvolatile memory element includes: a first electrode layer; a second electrode layer; and a variable resistance layer which is placed between the electrode layers, and whose resistance state reversibly changes between a high resistance state and a low resistance state based on a polarity of a voltage applied between the electrode layers. The variable resistance layer is formed by stacking a first oxide layer including an oxide of a first transition metal and a second oxide layer including an oxide of a second transition metal which is different from the first transition metal. At least one of the following conditions is satisfied: (1) a dielectric constant of the second oxide layer is larger than a dielectric constant of the first oxide layer; and (2) a band gap of the second oxide layer is smaller than a band gap of the first oxide layer. | 12-27-2012 |
20130112936 | RESISTANCE CHANGE ELEMENT AND MANUFACTURING METHOD THEREFOR - A variable resistance element including: a first electrode; a second electrode; and a variable resistance layer having a resistance value which reversibly changes according to electrical signals applied, wherein the variable resistance layer includes a first variable resistance layer comprising a first oxygen-deficient transition metal oxide, and a second variable resistance layer comprising a second transition metal oxide having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the first transition metal oxide layer, the second electrode has a single needle-shaped part at the interface with the second variable resistance layer, and the second variable resistance layer is interposed between the first variable resistance layer and the second electrode, is in contact with the first variable resistance layer and the second electrode, and covers the needle-shaped part. | 05-09-2013 |
20130250658 | NONVOLATILE MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE - A nonvolatile memory device includes: a first electrode; a second electrode; and a variable resistance layer which includes: a first oxide layer including a first metal oxide; a second oxide layer located between and in contact with the first oxide layer and a second electrode including a second metal oxide and having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the first oxide layer; and a local region located in the first oxide layer and the second oxide layer, having contact with the second electrode and no contact with the first electrode, and having a degree of oxygen deficiency higher than the degree of oxygen deficiency of the second oxide layer and different from the degree of oxygen deficiency of the first oxide layer. | 09-26-2013 |
20130286714 | DATA WRITE METHOD FOR WRITING DATA TO NONVOLATILE MEMORY ELEMENT, AND NONVOLATILE MEMORY DEVICE - Provided is a data write method for writing data to a nonvolatile memory element, the data write method including: a first application step of applying a first voltage pulse for changing a resistance state of the nonvolatile memory element from a first state to a second state; a second application step of applying a second voltage pulse which has a same polarity as the first voltage pulse and a voltage value of which has a smaller absolute value than the first voltage pulse; a determination step of determining whether the resistance state of the nonvolatile memory element is the second state; and a third application step of applying a third voltage pulse for changing the resistance state of the nonvolatile memory element from the first state to the second state when it is determined that the resistance state of the nonvolatile memory element is not the second state. | 10-31-2013 |
20140050013 | NONVOLATILE MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE - A nonvolatile memory element includes: a first electrode; a second electrode; and a variable resistance layer comprising a metal oxide positioned between the first electrode and the second electrode. The variable resistance layer includes: a first oxide layer having a resistivity ρ | 02-20-2014 |
20140056056 | METHOD FOR READING DATA FROM NONVOLATILE MEMORY ELEMENT, AND NONVOLATILE MEMORY DEVICE - A method for reading data from a nonvolatile memory element including a first electrode, a second electrode, and a variable resistance layer which includes a local region having a higher degree of oxygen deficiency than a surrounding region, the method including: applying a third voltage pulse between the first electrode and the second electrode, the third voltage pulse having a voltage with an absolute value smaller than absolute values of voltages of the first voltage pulse and the second voltage pulse; and reading the resistance state of the variable resistance layer by applying a fourth voltage pulse between the first electrode and the second electrode after the applying of a third voltage pulse, the fourth voltage pulse having a voltage with an absolute value smaller than the absolute values of the voltages of the first voltage pulse and the second voltage pulse. | 02-27-2014 |
20140061579 | NONVOLATILE MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE - A variable resistance nonvolatile memory element includes a first electrode, a second electrode, and a variable resistance layer including: a first oxide layer including a metal oxide having non-stoichiometric composition and including p-type carriers; a second oxide layer located between and in contact with the first oxide layer and a second electrode and including a metal oxide having non-stoichiometric composition and including n-type carriers; an oxygen reservoir region located in the first oxide layer, having no contact with the first electrode, and having an oxygen content atomic percentage higher than that of the first oxide layer; and a local region located in the second oxide layer, having contact with the oxygen reservoir region, and having an oxygen content atomic percentage lower than that of the second oxide layer. | 03-06-2014 |
20140063909 | NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY DEVICE, AND WRITING METHOD FOR USE IN NONVOLATILE MEMORY ELEMENT - In a nonvolatile memory element, when a voltage value of an electric pulse has a relationship of V2>V1>0 V>V3>V4 and a resistance value of a variable resistance layer has a relationship of R3>R2>R4>R1, the resistance value of the variable resistance layer becomes: R2, when the electric pulse having a voltage value of V2 or greater is applied between electrodes; R4, when the electric pulse having a voltage value of V4 or smaller is applied between the electrodes; R3, when the resistance value of the variable resistance layer is R2 and the electric pulse having a voltage value of V3 is applied between the electrodes; and R1, when the resistance value of the variable resistance layer is R4 and the electric pulse having a voltage value of V1 is applied between the electrodes. | 03-06-2014 |
20140126268 | METHOD OF DRIVING NONVOLATILE MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE - A method of driving a nonvolatile memory element including a variable resistance element having a state reversibly changing between low and high resistance states by an applied electrical signal and a transistor serially connected to the variable resistance element. The method including: setting the variable resistance element to the low resistance state by applying a first gate voltage to a gate of the transistor and applying a first write voltage negative with respect to a first electrode; and changing a resistance value of the transistor obtained in a low-resistance write operation, when a value of current passing through the variable resistance element in the setting of the low resistance state or a resistance value of the nonvolatile memory element in the case where the variable resistance element is in the low resistance state is outside a predetermined range. | 05-08-2014 |
20140278160 | ESTIMATION METHOD, ESTIMATION DEVICE, AND INSPECTION DEVICE FOR VARIABLE RESISTANCE ELEMENT, AND NONVOLATILE MEMORY DEVICE - An estimation method for a variable resistance element including (i) a first electrode, (ii) a second electrode, and therebetween (iii) a variable resistance layer in which a local region is formed which has resistive status that reversibly changes according to an electric pulse applied between the first electrode and the second electrode, the estimation method including: obtaining, when changes are made to the resistive status of the local region, measurement values each indicating a resistance state after one of the changes; and determining, based on a distribution of the obtained measurement values, an estimated amount of a physical parameter regarding structural characteristics of the local region by a calculation. | 09-18-2014 |
20140321197 | DRIVING METHOD OF NON-VOLATILE MEMORY ELEMENT AND NON-VOLATILE MEMORY DEVICE - In a driving method of a non-volatile memory element, the polarity of a write voltage pulse applied to change a variable resistance layer from a high-resistance state to a low-resistance state is such that an input/output terminal which is more distant from the variable resistance element becomes a source terminal, and when a first write voltage pulse is applied to change the variable resistance layer in the high-resistance state to the low-resistance state, a first gate voltage is applied to a gate terminal, while when a second write voltage pulse which is greater in absolute value of voltage than the first write voltage pulse is applied to change the variable resistance layer in an excess-resistance state to the low-resistance state, a second gate voltage which is smaller in absolute value than the first gate voltage is applied to the gate terminal. | 10-30-2014 |