Patent application number | Description | Published |
20130022839 | PBNZT FERROELECTRIC FILM, SOL-GEL SOLUTION, FILM FORMING METHOD AND METHOD FOR PRODUCING FERROELECTRIC FILM - To provide a PBNZT ferroelectric film capable of preventing sufficiently oxygen ion deficiency. The PBNZT ferroelectric film according to an embodiment of the present invention is a ferroelectric film including a perovskite-structured ferroelectric substance represented by ABO | 01-24-2013 |
20130153813 | POLING TREATMENT METHOD, PLASMA POLING DEVICE, PIEZOELECTRIC SUBSTANCE, AND MANFACTURING METHOD THEREFOR - The plasma poling device includes: a holding electrode | 06-20-2013 |
20130192878 | FERROELECTRIC FILM, ELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING FERROELECTRIC FILM - A method for manufacturing a ferroelectric film including the steps of forming a burnable material film containing hydrogen of not less than 1% by weight on a substrate; forming an amorphous thin film including a ferroelectric material on the burnable material film; and oxidizing and crystallizing the amorphous thin film while supplying hydrogen to the amorphous thin film by burning the burnable material film through heating of the burnable material film and the amorphous thin film in an oxygen atmosphere, to thereby form a first ferroelectric film on the substrate. | 08-01-2013 |
20130323534 | FERROELECTRIC CRYSTAL FILM, ELECTRONIC COMPONENT, MANUFACTURING METHOD OF FERROELECTRIC CRYSTAL FILM, AND MANUFACTURING APPARATUS THEREFOR - There is provided a manufacturing method of a ferroelectric crystal film in which an orientation of a seed crystal film is transferred preferably and a film deposition rate is suitable for volume production. | 12-05-2013 |
20140191618 | POLING TREATMENT METHOD, PLASMA POLING DEVICE, PIEZOELECTRIC BODY AND MANUFACTURING METHOD THEREOF, FILM FORMING DEVICE AND ETCHING DEVICE, AND LAMP ANNEALING DEVICE - A plasma poling device includes a holding electrode ( | 07-10-2014 |
20140242379 | FERROELECTRIC FILM AND METHOD FOR MANUFACTURING THE SAME - To produce a ferroelectric film formed of a lead-free material. The ferroelectric film according to an aspect of the present invention includes a (K | 08-28-2014 |
20140319405 | POLING TREATMENT METHOD, MAGNETIC FIELD POLING DEVICE, AND PIEZOELECTRIC FILM - To perform poling treatment in a simple procedure by dry process. An aspect of the invention is a magnetic field poling device including: a first holding part configured to hold a film-to-be-poled | 10-30-2014 |
20140335281 | FILM-FORMING TREATMENT JIG, PLASMA CVD APPARATUS, METAL PLATE AND OSMIUM FILM FORMING METHOD - In a film-forming treatment jig for forming a thin film on a plate having a through hole of a micro diameter by a single plasma film-forming treatment, the film-forming treatment jig includes: a holding member | 11-13-2014 |
20140349140 | CXNYHZ FILM, DEPOSITION METHOD, MAGNETIC RECORDING MEDIUM AND METHOD FOR MANUFACTURING THE SAME - To provide a C | 11-27-2014 |
20150030846 | CRYSTAL FILM, METHOD FOR MANUFACTURING CRYSTAL FILM, VAPOR DEPOSITION APPARATUS AND MULTI-CHAMBER APPARATUS - To improve the single crystallinity of a stacked film in which a ZrO | 01-29-2015 |
20150059910 | PLASMA CVD APPARATUS, METHOD FOR FORMING FILM AND DLC-COATED PIPE - To provide a plasma CVD apparatus capable of forming a thin film on the inner surface of a pipe even without a vacuum vessel. An aspect of the present invention is a plasma CVD apparatus including a first member sealing an end of a pipe; a second member sealing the other end of the pipe; a gas introduction mechanism that is connected to the first member and that introduces a raw material gas into the pipe; an exhausting mechanism that is connected to the second member and that vacuum-exhausts the inside of the pipe; an electrode disposed in the pipe; and a high-frequency power. | 03-05-2015 |