Patent application number | Description | Published |
20140141237 | TRANSPARENT CONDUCTIVE FILM - A transparent conductive film includes a film base, and a polycrystalline layer of indium tin oxide formed on the film base. The polycrystalline layer has a gradient of a density of tin oxide in a thickness direction thereof. A maximum value of the density of tin oxide in the thickness direction of the polycrystalline layer is 6 wt % to 12 wt %. The polycrystalline layer has a thickness of 10 nm to 35 nm. An average value of maximum sizes of crystal grains composing the polycrystalline layer is 380 nm to 730 nm. | 05-22-2014 |
20140353140 | METHOD FOR MANUFACTURING TRANSPARENT ELECTROCONDUCTIVE FILM - Disclosed is a manufacturing method for a transparent electroconductive film having excellent light-transmitting properties and low specific resistance. The present invention provides a method of manufacturing a transparent electroconductive film which comprises a film substrate and a crystallized indium tin oxide layer formed on the film substrate. The method comprises: a step of placing the film substrate in a sputtering apparatus using an indium tin oxide as a target material, and depositing indium tin oxide including amorphous parts on the film substrate by a magnetron sputtering process in which a horizontal magnetic field on the target material is set to 50 mT or more; and a step of, after the step of depositing indium tin oxide including amorphous parts, subjecting the indium tin oxide including amorphous parts to a heating treatment to thereby crystallize the indium tin oxide including amorphous parts to form the crystallized indium tin oxide layer. | 12-04-2014 |
20150303329 | COMPOUND SOLAR CELL AND PRODUCTION METHOD THEREFOR - A compound solar cell having a higher conversion efficiency and a method for producing the compound solar cell at lower costs are provided. The compound solar cell includes a CIGS light absorbing layer, a buffer layer and a front side electrode layer provided on a substrate. An interface layer made of a mixed crystal compound having a composition represented by the following general formula is provided between the CIGS light absorbing layer and the buffer layer: Zn(O | 10-22-2015 |
20150357076 | TRANSPARENT CONDUCTIVE FILM AND PRODUCTION METHOD THEREFOR - A transparent conductive film, includes: an organic polymer film substrate; at least one undercoat layer formed on the organic polymer film substrate by a dry process; and a transparent conductive coating provided on at least one surface of the organic polymer film substrate with the undercoat layer interposed therebetween, wherein the transparent conductive coating is a crystalline coating of an indium-based complex oxide having a content of a tetravalent metal element oxide of 7 to 15% by weight as calculated by the formula {(the amount of the tetravalent metal element oxide)/(the amount of the tetravalent metal element oxide+the amount of indium oxide)}×100(%), the transparent conductive coating has a thickness in the range of 10 to 40 nm, and the transparent conductive coating has a specific resistance of 1.3×10 | 12-10-2015 |
20150357077 | TRANSPARENT CONDUCTIVE FILM AND PRODUCTION METHOD THEREFOR - The transparent conductive film of the invention includes a transparent conductive coating provided on at least one surface of an organic polymer film substrate, wherein the transparent conductive coating is a crystalline coating of an indium-based complex oxide having a tetravalent metal oxide content of 7 to 15% by weight as calculated by the formula {(the amount of the tetravalent metal element oxide)/(the amount of the tetravalent metal element oxide+the amount of indium oxide)}×100 (%), has a thickness of 10 to 40 nm and a specific resistance of 1.3×10 | 12-10-2015 |
20150357492 | CIGS FILM PRODUCTION METHOD, AND CIGS SOLAR CELL PRODUCTION METHOD USING THE CIGS FILM PRODUCTION METHOD - A CIGS film production method capable of suppressing oxidation of a front surface of a CIGS film, and a CIGS solar cell production method using the CIGS film production method includes the steps of: forming a first region having a Ga/(In+Ga) ratio progressively reduced as the thickness of the first region increases to a predetermined first thickness position from a back surface of the CIGS film; forming a second region having a Ga/(In+Ga) ratio progressively increased as the thickness of the second region increases to a predetermined second thickness position from the first region; and forming a third region on the second region by vapor-depositing Se and In, the third region having a Ga/(In+Ga) ratio progressively reduced toward a front surface of the CIGS film. | 12-10-2015 |
20150380589 | CIGS FILM, AND CIGS SOLAR CELL EMPLOYING THE SAME - The present invention provides a CIGS film substantially free from oxidation of a front surface thereof and a CIGS solar cell employing the CIGS film and substantially free from reduction and variation in conversion efficiency. The CIGS film, which is used as a light absorbing layer for the CIGS solar cell, includes: a first region having a Ga/(In+Ga) ratio progressively reduced along its thickness toward a predetermined first thickness position from a back surface of the CIGS film; a second region having a Ga/(In+Ga) ratio progressively increased along its thickness toward a predetermined second thickness position from the first region; and a third region provided on the second region and having a Ga/(In+Ga) ratio progressively reduced along its thickness toward the front surface of the CIGS film. | 12-31-2015 |
20150380596 | CIGS FILM PRODUCTION METHOD, AND CIGS SOLAR CELL PRODUCTION METHOD USING THE CIGS FILM PRODUCTION METHOD - The CIGS film production method includes: a stacking step of stacking a layer (A) containing indium, gallium and selenium and a layer (B) containing copper and selenium, in this order in a solid phase over a substrate; and a heating step of heating the resulting stack of the layer (A) and the layer (B) to melt the layer (B) into a liquid phase, whereby copper is diffused from the layer (B) into the layer (A) to cause crystal growth; wherein the layer (A) is formed by repeatedly stacking a gallium selenide film (Y) and an indium selenide film (X) in this order and reducing a thickness ratio (Y/X) between the gallium selenide film (Y) and the indium selenide film (X) as the stacking is repeated. | 12-31-2015 |