Patent application number | Description | Published |
20090068773 | METHOD FOR FABRICATING PIXEL STRUCTURE OF ACTIVE MATRIX ORGANIC LIGHT-EMITTING DIODE - A method for fabricating an AMOLED pixel includes forming a transparent semiconductor layer on a substrate and forming a first channel layer of the switch TFT, a lower electrode of a storage capacitor and a second channel layer of a driving TFT. A first dielectric layer is formed over the substrate. A first opaque metal gate of the switch TFT, a second opaque metal gate of the driving TFT and a scan line are formed on the first dielectric layer. A first source and a first drain of the switch TFT are formed in the first channel layer and a second source and a second drain of the switch TFT are formed in the second channel layer. A patterned transparent metal layer is formed on the first dielectric layer. A data line is formed over the substrate. An OLED is formed over the substrate. | 03-12-2009 |
20090179842 | FLAT DISPLAY PANEL - A flat display panel is provided. The flat display panel includes a plurality of scan lines, a plurality of data lines, and a plurality of pixels arranged in an (m×n) array, in which both m and n are integers greater than 2. Each of the pixels includes four sub-pixels arranged in a (2×2) array. In each of the pixels, the sub-pixels are connected with one of the scan lines and one of the data lines correspondingly, and display different color lights, respectively. In any four pixels arranged in a (2×2) array, the four sub-pixels located at the center area display the same color light. | 07-16-2009 |
20100127254 | PHOTO SENSING ELEMENT ARRAY SUBSTRAT - A photo sensing element array substrate is provided. The photo sensing element array substrate includes a flexible substrate and a plurality of photo sensing elements. The photo sensing elements are disposed in array on the flexible substrate. Each of the photo sensing elements includes a photo sensing thin film transistor (TFT), an oxide semiconductor TFT and a capacitor. The photo sensing TFT is disposed on the flexible substrate. The oxide semiconductor TFT is disposed on the flexible substrate. The oxide semiconductor TFT is electrically connected to the photo sensing TFT. The capacitor is disposed on the flexible substrate and electrically connected between the photo sensing TFT and the oxide semiconductor TFT. When the photo sensing element array substrate is bent, it remains unaffected from normal operation. | 05-27-2010 |
20100148168 | INTEGRATED CIRCUIT STRUCTURE - An integrated circuit structure including a substrate, an insulating layer, a first transistor and a second transistor is provided. The insulating layer, the first transistor and the second transistor are disposed on the substrate. The first transistor includes a first gate, a first oxide semiconductor layer, a first source and a first drain. A portion of the first source and the first drain directly contacting the first oxide semiconductor layer is composed of a Ti-containing metal. The second transistor includes a second gate, a second oxide semiconductor layer, a second source and a second drain. A portion of the second source and the second drain directly contacting the second oxide semiconductor layer is composed of a none-Ti-containing metal. In addition, the first oxide semiconductor layer and the second oxide semiconductor layer may have different thickness or different carrier concentrations. | 06-17-2010 |
20100276682 | OXIDE SEMICONDUCTOR THIN-FILM TRANSISTOR - An oxide semiconductor thin-film transistor, comprising: a source electrode and a drain electrode formed on a substrate; a composite semiconductor active layer formed between the source electrode and the drain electrode; a gate dielectric layer formed on the source electrode, the composite semiconductor active layer and the drain electrode; and a gate electrode formed on the gate dielectric layer and corresponding to the composite semiconductor active layer; wherein the composite semiconductor active layer comprises a low carrier-concentration first oxide semiconductor layer and a high carrier-concentration second oxide semiconductor layer. | 11-04-2010 |
20110073749 | Photosensor Circuit - A photosensor circuit including a first node, a level shifting circuit, a phototransistor and an inverter is provided. The first node has an operation voltage signal. The level shifting circuit is coupled to the first node for biasing the first node, so that the operation voltage signal is biased to an operation biasing level. The phototransistor is coupled to the first node for receiving an optical signal and accordingly generates a first electrical signal by means of controlling the level of the operation voltage signal. The inverter receives the first electrical signal and accordingly generates and outputs a second electrical signal, which indicates the intensity of the optical signal. | 03-31-2011 |
20120164766 | METHOD OF FABRICATING AN ACTIVE DEVICE ARRAY AND FABRICATING AN ORGANIC LIGHT EMITTING DIODE ARRAY - Methods of fabricating active device array and organic light emitting diode array are provided. A first pattern metal layer is formed over a substrate. An oxide semiconductor layer is formed entirely over the substrate. A first insulation layer covering the first patterned metal layer and the oxide semiconductor layer is formed entirely on the substrate. A second patterned metal layer is formed on the first insulation layer. The oxide semiconductor layer and the first insulation layer is patterned by using the second patterned metal layer as a mask to form a first patterned oxide semiconductor layer and a first patterned insulation layer. A second insulation layer is entirely formed on the substrate. A second patterned oxide semiconductor layer is formed over the second insulation layer. A third patterned metal layer is formed over the second insulation layer. | 06-28-2012 |
20120171792 | METHOD OF FABRICATING A PIXEL ARRAY - A method of fabricating a pixel array is provided. A first metal layer is formed over a substrate. The metal layer is patterned to form a plurality of data lines and a plurality of drain patterns adjacent to each data line. The data lines and the drain patterns are separated from each other. An oxide semiconductor layer and a first insulation layer covering the oxide semiconductor layer are formed over the substrate. A second metal layer is formed on the first insulation layer and patterned to form a plurality of scan lines intersected with the data lines and the drain patterns. By using the scan lines as a mask, the oxide semiconductor layer and the first insulation layer are patterned to form a plurality of oxide semiconductor channels located under each scan line. Each oxide semiconductor channel is located between one data line and one drain pattern. | 07-05-2012 |
20130059081 | METHOD OF FABRICATING FLEXIBLE SUBSTRATE STRUCTURE - A method of fabricating a flexible substrate structure is provided. A flexible metal carrier including at least one first region and at least one second region is provided. A surface-modified layer is formed on the first region of the flexible metal carrier. A flexible plastic substrate is formed over the first region and the second region of the flexible metal carrier. The flexible plastic substrate over the first region contacts with the surface-modified layer. The flexible plastic substrate over the second region contacts with the flexible metal carrier. | 03-07-2013 |
20130059118 | FLEXIBLE SUBSTRATE STRUCTURE AND METHOD OF FABRICATING THE SAME - A flexible substrate structure including a flexible metal carrier, a surface-modified layer and a flexible plastic substrate is provided. The flexible metal carrier includes a first region and a second region. The surface-modified layer is located on and contacts with the first region of the flexible metal carrier. The flexible plastic substrate is located over the first region and the second region. The flexible plastic substrate over the first region contacts with the surface-modified layer. The flexible plastic substrate over the second region contacts with the flexible metal carrier. | 03-07-2013 |
20130126859 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a semiconductor device includes forming a metal oxide semiconductor layer and a first insulating layer on a substrate. A gate is formed on the first insulating layer. The first insulating layer is patterned by using the gate as an etching mask so as to expose the metal oxide semiconductor layer to serve as a source region and a drain region. A dielectric layer is formed on the substrate to cover the gate and the oxide semiconductor layer, where the dielectric layer has at least one of hydrogen group and hydroxyl group. A heating treatment is performed so that the at least one of hydrogen group and hydroxyl group reacts with the source region and the drain region. A source electrode and a drain electrode electrically connected to the source region and the drain region respectively are formed on the dielectric layer. | 05-23-2013 |
20130161703 | SENSOR ELEMENT ARRAY AND METHOD OF FABRICATING THE SAME - A sensor element array and method of fabricating the same are provided. The sensor element array is disposed on a substrate and includes a first patterned conductive layer, a channel layer, a first insulation layer, a second patterned conductive layer, a second insulation layer, and a third patterned conductive layer. The first patterned conductive layer includes a sensing line, a first power line, a source/drain pattern and a branch pattern. The channel layer includes a first channel and a second channel. Margins of the first insulation layer and the second patterned conductive layer are substantially overlapped. The second patterned conductive layer includes a selecting line, a gate pattern, and a gate connecting pattern. The second insulation layer has a first connecting opening for exposing the gate connecting pattern. The third patterned conductive layer includes a sensing electrode electrically connected to the gate connecting pattern. | 06-27-2013 |
20140110715 | Thin Film Transistor Array Panel and Manufacturing Method Thereof - A thin film transistor (TFT) array display panel and a manufacturing method thereof are provided. The TFT array panel may comprise a substrate, a pixel array and an absorption layer. The substrate has an upper surface. The pixel array may be formed on the upper surface of the substrate and comprises several data lines, several scan lines and several active elements. The data lines and the scan lines define several pixel areas. Each active element is formed in the corresponding pixel area, and may comprise a channel layer. The absorption layer and the channel layer may be formed on the same layer structure. | 04-24-2014 |
20140312343 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a semiconductor device includes forming a metal oxide semiconductor layer and a first insulating layer on a substrate. A gate is formed on the first insulating layer. The first insulating layer is patterned by using the gate as an etching mask so as to expose the metal oxide semiconductor layer to serve as a source region and a drain region. A dielectric layer is formed on the substrate to cover the gate and the oxide semiconductor layer, where the dielectric layer has at least one of hydrogen group and hydroxyl group. A heating treatment is performed so that the at least one of hydrogen group and hydroxyl group reacts with the source region and the drain region. A source electrode and a drain electrode electrically connected to the source region and the drain region respectively are formed on the dielectric layer. | 10-23-2014 |