Patent application number | Description | Published |
20090072337 | IMAGE SENSORS INCLUDING PHOTOELECTRIC CONVERTING UNITS HAVING MULTIPLE IMPURITY REGIONS AND METHODS OF FORMING THE SAME - An image sensor includes a semiconductor layer, and first and second photoelectric converting units including first and second impurity regions in the semiconductor layer that are spaced apart from each other and that are at about an equal depth in the semiconductor layer, each of the impurity regions including an upper region and a lower region. A width of the lower region of the first impurity region may be larger than a width of the lower region of the second impurity region, and widths of upper regions of the first and second impurity regions are equal. | 03-19-2009 |
20090140365 | Image sensor with back-side illuminated photoelectric converters - An image sensor includes a circuit substrate, a plurality of isolation regions, a plurality of photoelectric converters, and an insulation layer. The isolation regions are formed in a pixel region having the photoelectric converters formed therein with each photoelectric converter being electrically isolated by the isolation regions. The insulation layer is formed in a pad region with a substantially same depth as the isolation regions. The isolation region and the insulation layer are simultaneously formed for efficient fabrication of the image sensor. | 06-04-2009 |
20100053387 | Image sensor with multiple types of color filters - An image sensor includes a plurality of photoelectric conversion devices formed in a substrate and first and second color filters. The first color filter is formed over a first photoelectric conversion device and comprised of an organic material. The second color filter is formed over a second photoelectric conversion device and comprised of a plurality of inorganic layers. With such different types of color filters, spectral characteristic of the image sensor are enhanced. | 03-04-2010 |
20100110246 | Image sensor and method of manufacturing the same - Provided is an image sensor. The image sensor according to example embodiments may include a substrate having an effective pixel region and an ineffective pixel region adjacent to the effective pixel region. The substrate may also have a shading pattern over the ineffective pixel region of the substrate. The shading pattern includes one or more openings to allow hydrogen ions to pass therethrough but prevent incident light from penetrating to the ineffective pixel region. | 05-06-2010 |
20100140731 | IMAGE SENSORS INCLUDING PHOTOELECTRIC CONVERTING UNITS HAVING MULTIPLE IMPURITY REGIONS - An image sensor includes a semiconductor layer, and first and second photoelectric converting units including first and second impurity regions in the semiconductor layer that are spaced apart from each other and that are at about an equal depth in the semiconductor layer, each of the impurity regions including an upper region and a lower region. A width of the lower region of the first impurity region may be larger than a width of the lower region of the second impurity region, and widths of upper regions of the first and second impurity regions are equal. | 06-10-2010 |
20100167453 | Methods of forming an image sensor - Provided is a method of forming an image sensor. The method may include providing a single crystalline semiconductor layer including at least one photodiode onto a support substrate; forming a material layer including dopants on the single crystalline semiconductor layer; and forming a dopant diffusion layer in the single crystalline semiconductor layer by diffusing the dopants of the material layer. | 07-01-2010 |
20100167456 | IMAGE SENSOR AND METHOD OF FABRICATING THE SAME - An image sensor and a method of fabricating the same are provided. A pad region is disposed on a substrate. The pad region has a higher concentration of impurity ions than the substrate. The pad region is selectively removed using the substrate as an etch mask, thereby forming a hole. A conductive pad is formed in the hole of the substrate. | 07-01-2010 |
20100171191 | IMAGE SENSOR AND METHOD OF FABRICATING THE SAME - An image sensor includes at least one photoelectric conversion device formed in a silicon substrate, at least one lens formed on one side of the photoelectric conversion device and configured to collect light, a dielectric layer formed on the other side of the photoelectric conversion device and a reflective pattern formed on the dielectric layer. The reflective pattern serves as an electrical circuit interconnection and is configured to reflect the light passing through the dielectric layer such that the light is absorbed to the silicon substrate again. | 07-08-2010 |
20100201926 | Backside-illuminated image sensor and method of forming the same - The backside-illuminated image sensor may include a substrate having a first substrate surface, a second substrate surface to which light is incident, and a plurality of pixel regions. The sensor may also include a photoelectric conversion unit in the substrate, multi-layered interconnections and interlayer dielectrics over the first substrate surface, a plurality of color filters corresponding to the respective pixel regions over the second surface, and a plurality of microlenses over the respective color filters. A first type of color filter of the plurality of color filters may be of a first color having a wavelength that is longest among a remaining type of color filters of the plurality of color filters and include a first filter surface adjacent to the second substrate surface and a second filter surface opposite to the first filter surface, a width of the first filter surface narrower than that of the second filter surface. | 08-12-2010 |
20100285630 | Method of manufacturing an image sensor having improved anti-reflective layer - In a method of manufacturing an image sensor, a photodiode may be formed in a light receiving region of a substrate having a first surface. A conductive wiring may be formed on the first surface of the substrate. After removing a portion of the substrate opposite to the first surface, an anti-reflective layer may be formed on a second surface of the substrate. The second surface may be opposite to the first surface. The anti-reflective layer and the light receiving region may be thermally treated to cure defects including dangling bonds in the substrate and to improve a refraction index of the anti-reflective layer. The image sensor may have an enhanced light transmittance and may produce high-definition images. | 11-11-2010 |
20110080511 | IMAGE SENSORS AND METHODS OF FABRICATING THE SAME - An image sensor and a method of fabricating the same are provided. The image sensor includes a substrate having a pixel region including a plurality of unit pixels and a non-pixel region, at least one first well in the non-pixel region, an interconnect structure on a first side of the substrate, and a base well in the non-pixel region and between the first well and a second side of the substrate. | 04-07-2011 |
20110101430 | CMOS IMAGE SENSOR - A CIS and a method of manufacturing the same, the CIS including a substrate having a first surface and second surface opposite thereto, the substrate including an APS array region including a photoelectric transformation element and a peripheral circuit region; an insulating interlayer on the first surface of the substrate and including metal wirings electrically connected to the photoelectric transformation element; a light blocking layer on the peripheral circuit region of the second surface of the substrate, exposing the APS array region, and including a plurality of metal wiring patterns spaced apart from one another to form at least one drainage path along a boundary region between the APS array region and the peripheral circuit region; a color filter layer on the second surface of the substrate covering the APS array region and the light blocking layer; and a microlens on the color filter layer on the APS array region. | 05-05-2011 |
20110198717 | IMAGE SENSOR AND METHOD OF FABRICATING THE SAME - An image sensor and a method of fabricating the same are provided. A pad region is disposed on a substrate. The pad region has a higher concentration of impurity ions than the substrate. The pad region is selectively removed using the substrate as an etch mask, thereby forming a hole. A conductive pad is formed in the hole of the substrate. | 08-18-2011 |
20130288420 | FABRICATING METHOD OF SEMICONDUCTOR DEVICE - A method of making a semiconductor device includes forming wiring on a first surface of a first substrate, removing a portion of a second surface of the first substrate to reduce a thickness of the first substrate, forming an oxide film on the second surface of the first substrate based on an oxidation process performed within a temperature range, and removing the oxide film. The temperature range may be below a melting temperature of the wiring, and the oxide film is formed to a depth that includes one or more defects below the second surface of the first substrate. Removal of the oxide film results in removing a portion of the first substrate that includes the one or more effects. | 10-31-2013 |
20130307110 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device includes a substrate including a front side and a back side opposite the front side, first P-type regions located adjacent to the back side and spaced apart from each other in the substrate, N-type regions located under the first P-type regions and spaced apart from each other in the substrate, and second P-type regions located adjacent to the back side and located between the first P-type regions. | 11-21-2013 |
20140213011 | METHOD OF MANUFACTURING CMOS IMAGE SENSOR - A CIS and a method of manufacturing the same, the CIS including a substrate having a first surface and second surface opposite thereto, the substrate including an APS array region including a photoelectric transformation element and a peripheral circuit region; an insulating interlayer on the first surface of the substrate and including metal wirings electrically connected to the photoelectric transformation element; a light blocking layer on the peripheral circuit region of the second surface of the substrate, exposing the APS array region, and including a plurality of metal wiring patterns spaced apart from one another to form at least one drainage path along a boundary region between the APS array region and the peripheral circuit region; a color filter layer on the second surface of the substrate covering the APS array region and the light blocking layer; and a microlens on the color filter layer on the APS array region. | 07-31-2014 |
20140264695 | Image Sensor and Method of Manufacturing the Same - An image sensor includes a semiconductor layer having a first surface and a second surface opposite to each other and including a photodiode and a hydrogen containing region adjacent the first surface. A crystalline anti-reflective layer is on the first surface of the semiconductor layer, and is configured to allow hydrogen atoms to penetrate into the first surface of the semiconductor layer. Driving transistors and wires are on the second surface of the semiconductor layer, and a color filter and a micro lens are on the anti-reflective layer. The hydrogen containing region contains hydrogen atoms that combine with defects at the first surface. | 09-18-2014 |