Patent application number | Description | Published |
20120241317 | Sputtering Target Comprising Oxide Phase Dispersed in Co or Co Alloy Phase, Magnetic Thin Film Made of Co or Co Alloy Phase and Oxide Phase, and Magnetic Recording Medium Using the Said Thin Film - A sputtering target comprising an oxide phase is dispersed in Co or a Co alloy phase, wherein the sputtering target is configured from a metal matrix phase containing Co, and a phase containing SiO | 09-27-2012 |
20120318669 | SPUTTERING TARGET-BACKING PLATE ASSEMBLY - Provided is a sputtering target-backing plate assembly where a raw material powder prepared so as to have the composition of a magnetic material sputtering target is filled in a die together with a backing plate and hot-pressed, thereby being bonded to the backing plate simultaneously with sintering of the magnetic material target powder. | 12-20-2012 |
20130175167 | FERROMAGNETIC SPUTTERING TARGET AND METHOD FOR MANUFACTURING SAME - Provided is a ferromagnetic sputtering target having a composition containing 20 mol % or less of Cr, 5 to 30 mol % of Pt, 5 to 15 mol % of SiO | 07-11-2013 |
20130206592 | Ferromagnetic Sputtering Target - Provided is a ferromagnetic sputtering target having a metal composition comprising 20 mol % or less of Cr, 5 mol % or more of Pt, and the balance of Co, wherein the target includes a metal base (A) and two different phases (B) and (C) in the metal base (A), the phase (B) being a Co—Ru alloy phase containing 30 mol % or more of Ru, and the phase (C) being a metal or alloy phase primarily composed of Co or a Co alloy. The present invention improves the leakage magnetic flux to provide a ferromagnetic sputtering target that can perform stable discharge with a magnetron sputtering device. | 08-15-2013 |
20130206593 | FERROMAGNETIC MATERIAL SPUTTERING TARGET - Provided is a ferromagnetic material sputtering target comprising a metal having a composition that Cr is contained in an amount of 20 mol % or less, Ru is contained in an amount of 0.5 mol % or more and 30 mol % or less, and the remainder is Co, wherein the target has a structure including a base metal (A) and, within the base metal (A), a Co—Ru alloy phase (B) containing 35 mol % or more of Ru. The present invention provides a ferromagnetic material sputtering target that can improve leakage magnetic flux to allow stable discharge with a magnetron sputtering apparatus. | 08-15-2013 |
20130213804 | FERROMAGNETIC MATERIAL SPUTTERING TARGET - Provided is a ferromagnetic material sputtering target comprising a metal having a composition that Cr is contained in an amount of 20 mol % or less, Pt is contained in an amount of 5 mol % or more, and the remainder is Co, wherein the target includes a base metal (A) and, within the base metal (A), a Co—Pt alloy phase (B) containing 40 to 76 mol % of Pt, and a metal or alloy phase (C), which is different from the phase (B) and is composed of Co or an alloy comprising Co as a main component. The present invention improves the leakage magnetic flux to provide a ferromagnetic material sputtering target that can perform stable discharge with a magnetron sputtering apparatus. | 08-22-2013 |
20130220804 | Ferromagnetic Material Sputtering Target - Provided is a ferromagnetic material sputtering target having a metal composition comprising 5 mol % or more of Pt and the balance of Co, wherein the target has a structure including a metal base (A) and a phase (B) of a Co—Pt alloy containing 40 to 76 mol % of Pt in the metal base (A). Further provided is a ferromagnetic material sputtering target having a metal composition comprising 5 mol % or more of Pt, 20 mol % or less of Cr, and the balance of Co, wherein the target has a structure including a metal base (A) and a phase (B) of a Co—Pt alloy containing 40 to 76 mol % of Pt in the metal base (A). The present invention provides a ferromagnetic material sputtering target that can improve the leakage magnetic flux to allow stable discharge with a magnetron sputtering device. | 08-29-2013 |
20130292245 | FE-PT-Based Ferromagnetic Sputtering Target and Method for Producing Same - A ferromagnetic sputtering target having a composition comprising 5 to 50 mol % of Pt, 5 to 15 mol % of SiO | 11-07-2013 |
20140311899 | Ferromagnetic Material Sputtering Target - Provided is a sputtering target which comprises a metal matrix phase comprising Co and Pt, Co and Cr, or Co, Cr and Pt; and an oxide phase at least containing Cr | 10-23-2014 |
20140367254 | Co-Cr-Pt-Based Sputtering Target and Method for Producing Same - A sputtering target containing, as metal components, 0.5 to 45 mol % of Cr and remainder being Co, and containing, as non-metal components, two or more types of oxides including Ti oxide, wherein a structure of the sputtering target is configured from regions where oxides including at least Ti oxide are dispersed in Co (non-Cr-based regions), and a region where oxides other than Ti oxide are dispersed in Cr or Co—Cr (Cr-based region), and the non-Cr-based regions are scattered in the Cr-based region. An object of this invention is to provide a sputtering target for forming a granular film which suppresses the formation of coarse complex oxide grains and generates fewer particles during sputtering. | 12-18-2014 |