Patent application number | Description | Published |
20110132757 | Sputtering Target with Few Surface Defects, and Surface Processing Method Thereof - A sputtering target and surface processing method is provided. Intermetallic compounds, oxides, carbides, carbonitrides and other substances without ductility exist in the target surface in a highly ductile matrix phase at a volume ratio of 1 to 50%. The target surface is preliminarily subjected to primary processing of cutting work, and then subsequently subjected to finish processing via polishing. The sputtering target subject to this surface processing has an improved target surface with numerous substances without ductility and prevents or suppresses the generation of nodules and particles upon sputtering. | 06-09-2011 |
20110162971 | Sputtering Target and Process for Producing Same - A sputtering target with low generation of particles in which oxides, carbides, nitrides, borides, intermetallic compounds, carbonitrides, and other substances without ductility exist in a matrix phase made of a highly ductile substance at a volume ratio of 1 to 50%, wherein a highly ductile and conductive metal coating layer is formed on an outermost surface of the target. Provided are a sputtering target capable of improving the target surface in which numerous substances without ductility exist and preventing or inhibiting the generation of nodules and particles during sputtering, and a method of producing such a sputtering | 07-07-2011 |
20110284373 | Inorganic-Particle-Dispersed Sputtering Target - Provided is an inorganic-particle-dispersed sputtering target in which inorganic particles are dispersed in a Co base material, wherein the inorganic particles have an electric resistivity of 1×10 | 11-24-2011 |
20120097535 | Sputtering Target of Ferromagnetic Material with Low Generation of Particles - A ferromagnetic sputtering target comprising metal having a composition containing 20 mol % or less of Cr, and Co as the remainder; wherein the target structure includes a basis metal (A), and flat phases (B), containing 90 wt % or more of Co, within the basis metal (A), the average grain size of the phases (B) is 10 μm or more and 150 μm or less, and the average aspect ratio of the phases (B) is 1:2 to 1:10. Provided is a ferromagnetic sputtering target capable of inhibiting the generation of particles during sputtering, and improving the pass-through flux to achieve a stable electrical discharge with a magnetron sputtering device. | 04-26-2012 |
20120241317 | Sputtering Target Comprising Oxide Phase Dispersed in Co or Co Alloy Phase, Magnetic Thin Film Made of Co or Co Alloy Phase and Oxide Phase, and Magnetic Recording Medium Using the Said Thin Film - A sputtering target comprising an oxide phase is dispersed in Co or a Co alloy phase, wherein the sputtering target is configured from a metal matrix phase containing Co, and a phase containing SiO | 09-27-2012 |
20120318669 | SPUTTERING TARGET-BACKING PLATE ASSEMBLY - Provided is a sputtering target-backing plate assembly where a raw material powder prepared so as to have the composition of a magnetic material sputtering target is filled in a die together with a backing plate and hot-pressed, thereby being bonded to the backing plate simultaneously with sintering of the magnetic material target powder. | 12-20-2012 |
20130112555 | Sputtering Target of Ferromagnetic Material with Low Generation of Particles - Provided is a sputtering target of ferromagnetic material comprising a metal having a composition containing 20 mol % or less of Cr, and Co as the remainder; wherein the target structure includes a phase (A) which is a basis metal, and metal phases (B) having a component composition different from the peripheral texture within the phase (A), the area ratio occupied by oxides within 1 μm from the most outer periphery of metal phases (B) is 80% or less, and the average grain size of the metal phases (B) is 10 μm or more and 150 μm or less. Provided is a sputtering target of ferromagnetic material capable of inhibiting the generation of particles during sputtering, and improving the pass-through flux to achieve a stable electrical discharge with a magnetron sputtering device. | 05-09-2013 |
20130168240 | Fe-Pt-Based Ferromagnetic Material Sputtering Target - An Fe—Pt-based ferromagnetic material sputtering target comprising a metal and a metal oxide, wherein the metal has a composition in which Pt is contained in an amount of 5 mol % or more and 60 mol % or less and the remainder is Fe. An object of the present invention is to provide a ferromagnetic material sputtering target, which enables to form a magnetic recording layer composed of a magnetic phase such as an Fe—Pt alloy, and a non-magnetic phase to isolate the magnetic phase, and in which a metal oxide is used as one of the materials for the non-magnetic phase. Provided is a ferromagnetic material sputtering target wherein an inadvertent release of the metal oxide during sputtering and particle generation due to abnormal electrical discharge starting at a void inherently included in the target are suppressed, the adherence between the metal oxide and the matrix alloy is enhanced, and its density is increased. | 07-04-2013 |
20130206591 | Sputtering Target for Magnetic Recording Film and Method for Producing Same - Provided is a sputtering target for a magnetic recording film containing SiO | 08-15-2013 |
20130213802 | Sintered Compact Sputtering Target - A sintered compact sputtering target is provided and contains Co and Cr as metal components and includes oxides dispersed in the structure formed of the metal components. The structure of the sputtering target has a region (A) containing Co oxides dispersed in Co and a region (D) containing Cr oxides in a periphery of the region (A). In addition a method of producing the above referenced sintered compact sputtering target is provided and includes the steps of mixing a powder prepared by pulverizing a sintered compact containing Co oxide dispersed in Co, a Co powder, and a Cr power and pressure-sintering the resulting powder mixture to provide a sputtering target. | 08-22-2013 |
20130306470 | Sputtering Target for Magnetic Recording Film - A sputtering target for a magnetic recording film which contains carbon, the sputtering target is characterized in that the ratio (I | 11-21-2013 |
20130341184 | Co-Cr-Pt-B-Based Alloy Sputtering Target and Method for Producing Same - Provided is a Co—Cr—Pt—B-based alloy sputtering target having no more than 10 cracks of 0.1 to 20 μm in a B-rich phase in a 100 μm×100 μm area (field of view). Additionally provided is a method for producing this Co—Cr—Pt—B-based alloy sputtering target including the steps of hot forging or hot rolling a Co—Cr—Pt—B-based alloy cast ingot, thereafter performing cold rolling or cold forging thereto at an elongation rate of 4% or less, and machining the ingot to prepare a target having no more than 10 cracks of 0.1 to 20 μm in a B-rich phase in a 100 μm×100 μm area (field of view), or, hot forging or hot rolling the ingot, thereafter quenching the ingot to −196° C. to 100° C., and machining the ingot to prepare a target. The target of the present invention has high magnetic flux density and few microcracks in a B-rich layer, and thus stabilizes discharge and minimizes arcing. | 12-26-2013 |
20140001038 | Ferromagnetic Sputtering Target with Less Particle Generation | 01-02-2014 |
20140231250 | C PARTICLE DISPERSED FE-PT-BASED SPUTTERING TARGET - Provided is a sputtering target for a magnetic recording film, the sputtering target comprising 5 mol % or more and 60 mol % or less of Pt, 0.1 mol % or more and 40 mol % or less of C, 0.05 mol % or more and 20 mol % or less of titanium oxide, and the remainder being Fe. It is an object of the present invention to provide a high-density sputtering target that can produce a granular magnetic thin film without using any high-cost co-sputtering apparatuses and can also reduce the amount of particles generated during sputtering. | 08-21-2014 |
20140284212 | Sintered Compact Magnesium Oxide Target for Sputtering, and Method for Producing Same - A sintered compact magnesium oxide target for sputtering having a purity of 99.99 wt % or higher excluding C, a density of 3.57 g/cm | 09-25-2014 |
20140311902 | Magnetic Material Sputtering Target and Manufacturing Method Thereof - Provided is an oxide-containing magnetic material sputtering target wherein the oxides have an average grain diameter of 400 nm or less. Also provided is a method of producing an oxide-containing magnetic material sputtering target. The method involves depositing a magnetic material on a substrate by the PVD or CVD method, then removing the substrate from the deposited magnetic material, pulverizing the material to obtain a raw material for the target, and further sintering the raw material. An object of the present invention is to provide a magnetic material target, in particular a nonmagnetic grain-dispersed ferromagnetic sputtering target capable of suppressing discharge abnormalities of oxides that are the cause of particle generation during sputtering. | 10-23-2014 |
20140367254 | Co-Cr-Pt-Based Sputtering Target and Method for Producing Same - A sputtering target containing, as metal components, 0.5 to 45 mol % of Cr and remainder being Co, and containing, as non-metal components, two or more types of oxides including Ti oxide, wherein a structure of the sputtering target is configured from regions where oxides including at least Ti oxide are dispersed in Co (non-Cr-based regions), and a region where oxides other than Ti oxide are dispersed in Cr or Co—Cr (Cr-based region), and the non-Cr-based regions are scattered in the Cr-based region. An object of this invention is to provide a sputtering target for forming a granular film which suppresses the formation of coarse complex oxide grains and generates fewer particles during sputtering. | 12-18-2014 |
20150021175 | Magnetic Material Sputtering Target and Manufacturing Method for Same - A magnetic material sputtering target characterized in that, in a plane for observing the oxide in the target, oxide grains in the target have an average diameter of 1.5 μm or less, and that 60% or more of the oxide grains in the observing plane of the target have a difference between a maximum diameter and a minimum diameter of 0.4 μm or less, where the maximum diameter is a maximum distance between arbitrary two points on the periphery of an oxide grain, and the minimum diameter is a minimum distance between two parallel lines across the oxide grain. A non-magnetic grain dispersion-type magnetic material sputtering target that can inhibit abnormal discharge due to an oxide causing occurrence of particles during sputtering is obtained. | 01-22-2015 |
20150027882 | Sputtering Target for Magnetic Recording Medium, and Process for Producing Same - A sputtering target for a magnetic recording medium, wherein an average grain area of a B-rich phase is 90 μm | 01-29-2015 |