Patent application number | Description | Published |
20080205852 | ENCODED DATA RECORDING APPARATUS AND MOBILE TERMINAL - In a mobile terminal provided with an encoded data recording function, there is assumed a condition in which a picture frame transmitted from the terminal of a communication partner is reproduced by means of decoding processing and is displayed on a LCD ( | 08-28-2008 |
20090246070 | ALLOY WITH HIGH GLASS FORMING ABILITY AND ALLOY-PLATED METAL MATERIAL USING SAME - An alloy with a high glass forming ability characterized by containing a group of elements A with atomic radii of less than 0.145 nm of a total of 20 to 85 atm %, a group of elements B with atomic radii of 0.145 nm to less than 0.17 nm of a total of 10 to 79.7 atm %, and a group of elements C with atomic radii of 0.17 nm or more of a total of 0.3 to 15 atm %; when the elements with the greatest contents in the group of elements A, group of elements B, and group of elements C are respectively designated as the “element a”, “element b”, and “element c”, by the ratio of the content of the element a in the group of elements A (for example, Zn and/or Al), the ratio of the content of the element b in the group of elements B (for example, Mg), and the ratio of the content of the element c in the group of elements C (for example, Ca) all being 70 atm % or more; and by the liquid forming enthalpy between any two elements selected from the element a, element b, and element c being negative. | 10-01-2009 |
20100096045 | Fe-based amorphous alloy excellent in soft magnetic properties - The invention provides an amorphous alloy with good soft magnetic properties, namely an Fe-based amorphous alloy having excellent soft magnetic properties comprising, in at. %, Fe: 78 to 86%, P: 6 to 20%, C: 2 to 10%, one or both of Si and Al: 0.1 to 5%, and a balance of unavoidable impurities. P or C can as required be partially or totally replaced with B: 1 to 18%. | 04-22-2010 |
20100247876 | PRINTING INK COMPOSITION FOR LAMINATE - There is provided an ink composition containing a colorant, a solvent, and a binder composed of 80 to 98% by weight of a polyurethane resin, 0.5 to 5% by weight of a cellulose acetate alkylate resin and 1.0 to 15% by weight of a polyvinyl butyral resin, based on the solids content, in which composition the polyurethane resin is obtained by reacting a reaction product between (A) a polyether diol compound having a Mn of 1,000 to 5,000, or a mixture of the compound and a polyester diol having a Mn of 1,000 to 5,000, and (B) a diisocyanate compound, with (C) a hydroxyldialkylamine having a molecular weight of 50 to 300 and having one hydroxyl group in a molecule, and further reacting the product with (D) a chain extending agent; and a molar ratio of the OH group of the component (C) to the NCO group of the component (B) is 0.05 to 0.35. | 09-30-2010 |
20110148102 | LIQUID PHASE DIFFUSION BONDED PIPE JOINT AND METHOD OF PRODUCTION OF SAME (As Amended) - A liquid phase diffusion bonded pipe joint comprised of metal pipes or a metal pipe and a joint pipe joined by liquid phase diffusion bonding, and a method of production of the same, the liquid phase diffusion bonded pipe joint comprised of a metal joint provided with a tapered slanted part press-fit into an end of a metal pipe by a thrust in a pipe axial direction while expanding the metal pipe in inside diameter and tightly engaging with the end and a joining surface part continuing from the tapered slanted part and joined with an end face of the metal pipe by liquid phase diffusion bonding and a metal pipe tightly engaging with the tapered slanted part in the expanded state and with an end face joined with the joining surface part by liquid phase diffusion bonding. | 06-23-2011 |
Patent application number | Description | Published |
20080201581 | Method and apparatus for storing data - According to an aspect of an embodiment, a method comprises providing a matrix comprising m rows and n columns, each of the rows and columns comprising elements of zero and one, dividing data into n data blocks, associating each of the data blocks with each of the columns, calculating an exclusive-OR of selected data blocks in reference to one of the rows, the selected data blocks being determined by the element of one in the associated columns in the one of the rows, repeating the calculating in other rows and storing separately the calculated data resulting from the exclusive-OR of data blocks in association with the associated rows, respectively. | 08-21-2008 |
20100095108 | DATA TRANSFER DEVICE AND DATA TRANSFER METHOD - A data transfer device and method include obtaining a compression ratio and a compression speed of data for each of a plurality of compression levels, obtaining a compression ratio of data for each of the compression levels, adding a predicted time required for the compression and a predicted time required for the transfer of the data for each of the compression levels to determine a compression level for which the added predicted time is shortest, compressing the data to be transferred at the determined compression level and transferring the compressed to a transfer destination. | 04-15-2010 |
20100199146 | STORAGE SYSTEM, STORAGE CONTROLLER AND METHOD FOR CONTROLLING STORAGE SYSTEM - In a storage controller provided for a storage system provided with a plurality of disk devices, for controlling to storage data in the plurality of disk devices, an encoding unit encodes data to be stored in the plurality of disk devices by erasure correction coding to obtain encoded data. A storage/reading unit stores the encoded data in the plurality of disk devices and fetches the encoded data from the plurality of disk devices, according to instructions from a personal computer. A transmitting unit transmits the encoded data fetched from the plurality of disk devices by the storage/reading unit to a storage system | 08-05-2010 |
20110115654 | DATA ENCODING PROCESS, DATA DECODING PROCESS, COMPUTER-READABLE RECORDING MEDIUM STORING DATA ENCODING PROGRAM, AND COMPUTER-READABLE RECORDING MEDIUM STORING DATA DECODING PROGRAM - In a data encoding process: data is encoded by using unit bit series obtained from an encoding bit series; the encoding bit series is searched for a first bit series identical to a portion of the encoded data; the portion is substituted with a second bit series which includes a leading code indicating a leading position of a substitution range and position information indicating the position of the first bit series in the encoding bit series. In a data decoding process: the position information is detected from the substitution range in received data after the leading code is detected in the data; a substitution bit series is extracted from the position in the encoding bit series indicated by the position information; and the data in the substitution range is substituted with the substitution bit series so as to restore the encoded data. | 05-19-2011 |
20120239355 | COMPUTER-READABLE RECORDING MEDIUM IN WHICH THERMAL HYDRAULIC SIMULATION PROGRAM IS STORED, THERMAL HYDRAULIC SIMULATING DEVICE, AND METHOD FOR THERMAL HYDRAULIC SIMULATION - In the event of modifying analysis condition, after the simulation of a first time step carried out when the analysis condition is modified finishes and before the simulation of a second time step next after the first step starts, the modified analysis condition is referred and the simulation based on the modified analysis condition is carried out in the next time step. | 09-20-2012 |
20120247750 | SERVER DEVICE, CONTROL DEVICE, SERVER RACK, RECORDING MEDIUM STORING COOLING CONTROL PROGRAM, AND COOLING CONTROL METHOD - A server device includes: electronic devices; a housing that houses the electronic devices; at least one fan; air volume control units configured to adjust a volume of cooling airflow which is generated by rotation of the at least one fan and is ventilated through the electronic devices by opening and closing of respective valves; a valve opening control unit configured to control valve opening degrees of the air volume control units so that temperatures inside the electronic devices become a given target temperature; a fan control unit configured to run the at least one fan at a fan rotating speed that achieves a volume of cooling airflow to make temperatures inside the electronic devices become the given target temperature at a valve opening degree higher than the valve opening degrees that the valve opening control unit controls. | 10-04-2012 |
20120253757 | COMPUTER-READABLE RECODING MEDIUM IN WHICH THERMAL HYDRAULIC SIMULATION PROGRAM IS STORED, THERMAL HYDRAULIC SIMULATING DEVICE, AND METHOD FOR THERMAL HYDRAULIC SIMULATION - A prior simulation of a velocity field and a temperature field is carried out, and snapshot data of the velocity field and that of the temperature field are collected during the prior simulation. Then principal component analysis on the collected snapshot data obtains velocity-field and temperature field dimension transformation matrixes, on the based on which the analysis models of the velocity field and temperature field having respective first degrees of freedom are converted into reduced degree-of-freedom models. Consequently, a simulation of the velocity field and the temperature field is carried out using models having respective reduced degrees of freedom (i.e., second degrees of freedom). | 10-04-2012 |
Patent application number | Description | Published |
20090053555 | High Corrosion Resistance Hot dip Galvanized Steel Material - The present invention provides a high corrosion resistance hot dip galvannealed steel material comprised of a Zn-based hot dip plated steel material achieving both a higher corrosion resistance of the plated layer itself by the added elements and sacrificial protection of iron metal by the plated layer or workability free of degradation caused of formation of intermetallic compounds by added elements, that is, a high corrosion resistance hot dip Zn plated steel material characterized in that an alloy plated layer containing Zn: 35 mass % or more, preferably 40 mass % or more, contains a non-equilibrium phase having a heat capacity by differential scanning calorimetry of 1 J/g or more. Furthermore, 5% or more, preferably 50% or more in terms of vol % is an amorphous phase. The alloy layer may contain, by mass %, Mg: 1 to 60% and Al: 0.07 to 59%, may further contain one or more elements selected from Cr, Mn, Fe, Co, Ni, and Cu in a total of 0.1 to 10%, and may in addition contain one or more elements of 0.1 to 10% of La, 0.1 to 10% of Ce, 0.1 to 10% of Ca, 0.1 to 10% of Sn, 0.005 to 2% of P, and 0.02 to 7% of Si. | 02-26-2009 |
20090242082 | Fe-Based Amorphous Alloy Strip - The present invention provides a Fe—B—Si system amorphous alloy thin strip excellent in high magnetic flux density, thermal stability, amorphous formability improved workability and low core loss. The present invention further provides a Fe—B—Si system amorphous alloy thin strip which has the reduced cost without using high purity iron resources such as an electrolytic iron as iron resources used in an amorphous alloy thin strip, and also has core loss less than 0.10 W/kg at W | 10-01-2009 |
20090258249 | Alloy for Liquid-Phase Diffusion Bonding - An alloy having a low melting point for liquid-phase diffusion bonding capable of bonding both Ni-based heat resistance alloy material and Fe-based steel material. The alloy comprises in atom percent (%): 2210-15-2009 | |
Patent application number | Description | Published |
20120187397 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device which includes an oxide semiconductor and has favorable electrical characteristics is provided. In the semiconductor device, an oxide semiconductor film and an insulating film are formed over a substrate. Side surfaces of the oxide semiconductor film are in contact with the insulating film. The oxide semiconductor film includes a channel formation region and regions containing a dopant between which the channel formation region is sandwiched. A gate insulating film is formed on and in contact with the oxide semiconductor film. A gate electrode with sidewall insulating films is formed over the gate insulating film. A source electrode and a drain electrode are formed in contact with the oxide semiconductor film and the insulating film. | 07-26-2012 |
20120225543 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A method for manufacturing a highly reliable semiconductor device with less change in threshold voltage is provided. An insulating film from which oxygen can be released by heating is formed in contact with an oxide semiconductor layer, and light irradiation treatment is performed on a gate electrode or a metal layer formed in a region which overlaps with the gate electrode, so that oxygen is added into the oxide semiconductor layer in a region which overlaps with the gate electrode. Accordingly, oxygen vacancies or interface states in the oxide semiconductor layer in a region which overlaps with the gate electrode can be reduced. | 09-06-2012 |
20120228606 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The semiconductor device includes an oxide semiconductor film having a first region and a pair of second regions facing each other with the first region provided therebetween, a gate insulating film over the oxide semiconductor film, and a first electrode overlapping with the first region, over the gate insulating film. The first region is a non-single-crystal oxide semiconductor region including a c-axis-aligned crystal portion. The pair of second regions is an oxide semiconductor region containing dopant and including a plurality of crystal portions. | 09-13-2012 |
20120235137 | OXIDE SEMICONDUCTOR FILM, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. In a transistor using an oxide semiconductor film for an active layer, a microvoid is provided in a source region and a drain region adjacent to a channel region. By providing a microvoid in the source region and the drain region formed in an oxide semiconductor film, hydrogen contained in the channel region of an oxide semiconductor film can be captured in the microvoid. | 09-20-2012 |
20120244658 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability, is provided. In a method for manufacturing a transistor including an oxide semiconductor film, an implantation step where rare gas ions are implanted to the oxide semiconductor film is performed, and the oxide semiconductor film to which rare gas ions are implanted is subjected to a heating step under reduced pressure, in a nitrogen atmosphere, or in a rare gas atmosphere, whereby hydrogen or water contained in the oxide semiconductor film to which rare gas ions are implanted is released; thus, the oxide semiconductor film is highly purified. | 09-27-2012 |
20120315730 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. The transistor includes the oxide semiconductor film including a channel formation region and low-resistance regions in which a metal element and a dopant are included. The channel formation region is positioned between the low-resistance regions in the channel length direction. In a manufacturing method of the transistor, the metal element is added by heat treatment performed in the state where the oxide semiconductor film is in contact with a film including the metal element and the dopant is added through the film including the metal element by an implantation method so that the low resistance regions in which a metal element and a dopant are included are formed. | 12-13-2012 |
20120315735 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. In a manufacturing method of the transistor including the oxide semiconductor film including a channel formation region, an insulating film including a metal element is formed over the oxide semiconductor film, and low-resistance regions in which a dopant added through the insulating film by an implantation method is included are formed in the oxide semiconductor film. The channel formation region is positioned between the low-resistance regions in the channel length direction. | 12-13-2012 |
20120319100 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A miniaturized semiconductor device in which an increase in power consumption is suppressed and a method for manufacturing the semiconductor device are provided. A highly reliable semiconductor device having stable electric characteristics and a method for manufacturing the semiconductor device are provided. An oxide semiconductor film is irradiated with ions accelerated by an electric field in order to reduce the average surface roughness of a surface of the oxide semiconductor film. Consequently, an increase in the leakage current and power consumption of a transistor can be suppressed. Moreover, by performing heat treatment so that the oxide semiconductor film includes a crystal having a c-axis substantially perpendicular to the surface of the oxide semiconductor film, a change in electric characteristics of the oxide semiconductor film due to irradiation with visible light or ultraviolet light can be suppressed. | 12-20-2012 |
20130009149 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object of an embodiment of the present invention is to provide a semiconductor device which includes a transistor including an oxide semiconductor with high field-effect mobility, a small variation in threshold voltage, and high reliability. The semiconductor device includes a transistor which includes an insulating substrate from which oxygen is released by heat treatment and an oxide semiconductor film over the insulating substrate. A channel is formed in the oxide semiconductor film. The insulating substrate from which oxygen is released by heat treatment can be manufactured by implanting oxygen ions into at least a region of an insulating substrate on the side provided with the oxide semiconductor film. | 01-10-2013 |
20130023087 | METHOD FOR PROCESSING OXIDE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - To provide an oxide semiconductor film including a low-resistance region, which can be applied to a transistor. To provide a transistor including the oxide semiconductor film, which can perform at high speed. To provide a high-performance semiconductor device including the transistor including the oxide semiconductor film, which can perform at high speed, with high yield. A film having a reducing property is formed over the oxide semiconductor film. Next, part of oxygen atoms are transferred from the oxide semiconductor film to the film having a reducing property. Next, an impurity is added to the oxide semiconductor film through the film having a reducing property and then, the film having a reducing property is removed, so that a low-resistance region is formed in the oxide semiconductor film. | 01-24-2013 |
20130062600 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The contact resistance between an oxide semiconductor film and a metal film is reduced. A transistor that uses an oxide semiconductor film and has excellent on-state characteristics is provided. A semiconductor device capable of high-speed operation is provided. In a transistor that uses an oxide semiconductor film, the oxide semiconductor film is subjected to nitrogen plasma treatment. Thus, part of oxygen included in the oxide semiconductor film is replaced with nitrogen, so that an oxynitride region is formed. A metal film is formed in contact with the oxynitride region. The oxynitride region has lower resistance than the other region of the oxide semiconductor film. In addition, the oxynitride region is unlikely to form high-resistance metal oxide at the interface with the contacting metal film. | 03-14-2013 |
20130137232 | METHOD FOR FORMING OXIDE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An oxide semiconductor film is formed over a substrate. A sacrifice film is formed to such a thickness that the local maximum of the concentration distribution of an injected substance injected into the oxide semiconductor film in the depth direction of the oxide semiconductor film is located in a region from an interface between the substrate and the oxide semiconductor film to a surface of the oxide semiconductor film. Oxygen ions are injected as the injected substance into the oxide semiconductor film through the sacrifice film at such an acceleration voltage that the local maximum of the concentration distribution of the injected substance in the depth direction of the oxide semiconductor film is located in the region, and then the sacrifice film is removed. Further, a semiconductor device is manufactured using the oxide semiconductor film. | 05-30-2013 |
20130137255 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - To provide a semiconductor device including an oxide semiconductor which is capable of having stable electric characteristics and achieving high reliability, by a dehydration or dehydrogenation treatment performed on a base insulating layer provided in contact with an oxide semiconductor layer, the water and hydrogen contents of the base insulating layer can be decreased, and by an oxygen doping treatment subsequently performed, oxygen which can be eliminated together with the water and hydrogen is supplied to the base insulating layer. By formation of the oxide semiconductor layer in contact with the base insulating layer whose water and hydrogen contents are decreased and whose oxygen content is increased, oxygen can be supplied to the oxide semiconductor layer while entry of the water and hydrogen into the oxide semiconductor layer is suppressed. | 05-30-2013 |
20140209899 | METHOD FOR PROCESSING OXIDE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - To provide an oxide semiconductor film including a low-resistance region, which can be applied to a transistor. To provide a transistor including the oxide semiconductor film, which can perform at high speed. To provide a high-performance semiconductor device including the transistor including the oxide semiconductor film, which can perform at high speed, with high yield. A film having a reducing property is formed over the oxide semiconductor film. Next, part of oxygen atoms are transferred from the oxide semiconductor film to the film having a reducing property. Next, an impurity is added to the oxide semiconductor film through the film having a reducing property and then, the film having a reducing property is removed, so that a low-resistance region is formed in the oxide semiconductor film. | 07-31-2014 |
20140319517 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - To provide a transistor formed using an oxide semiconductor film with reduced oxygen vacancies. To provide a semiconductor device that operates at high speed. To provide a highly reliable semiconductor device. To provide a miniaturized semiconductor device. The semiconductor device includes an oxide semiconductor film; a gate electrode overlapping with the oxide semiconductor film; a gate insulating film between the oxide semiconductor film and the gate electrode; and a protective insulating film that is above the oxide semiconductor film, the gate electrode, and the gate insulating film and includes a region containing phosphorus or boron. | 10-30-2014 |
20140342499 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The contact resistance between an oxide semiconductor film and a metal film is reduced. A transistor that uses an oxide semiconductor film and has excellent on-state characteristics is provided. A semiconductor device capable of high-speed operation is provided. In a transistor that uses an oxide semiconductor film, the oxide semiconductor film is subjected to nitrogen plasma treatment. Thus, part of oxygen included in the oxide semiconductor film is replaced with nitrogen, so that an oxynitride region is formed. A metal film is formed in contact with the oxynitride region. The oxynitride region has lower resistance than the other region of the oxide semiconductor film. In addition, the oxynitride region is unlikely to form high-resistance metal oxide at the interface with the contacting metal film. | 11-20-2014 |
20150037932 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device which includes an oxide semiconductor and has favorable electrical characteristics is provided. In the semiconductor device, an oxide semiconductor film and an insulating film are formed over a substrate. Side surfaces of the oxide semiconductor film are in contact with the insulating film. The oxide semiconductor film includes a channel formation region and regions containing a dopant between which the channel formation region is sandwiched. A gate insulating film is formed on and in contact with the oxide semiconductor film. A gate electrode with sidewall insulating films is formed over the gate insulating film. A source electrode and a drain electrode are formed in contact with the oxide semiconductor film and the insulating film. | 02-05-2015 |
20150041803 | Semiconductor Device and Method for Manufacturing Thereof - A transistor that is formed using an oxide semiconductor film is provided. A transistor that is formed using an oxide semiconductor film with reduced oxygen vacancies is provided. A transistor having excellent electrical characteristics is provided. A semiconductor device includes a first insulating film, a first oxide semiconductor film, a gate insulating film, and a gate electrode. The first insulating film includes a first region and a second region. The first region is a region that transmits less oxygen than the second region does. The first oxide semiconductor film is provided at least over the second region. | 02-12-2015 |
20150140730 | OXIDE SEMICONDUCTOR FILM, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. In a transistor using an oxide semiconductor film for an active layer, a microvoid is provided in a source region and a drain region adjacent to a channel region. By providing a microvoid in the source region and the drain region formed in an oxide semiconductor film, hydrogen contained in the channel region of an oxide semiconductor film can be captured in the microvoid. | 05-21-2015 |
20150140733 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - To provide a semiconductor device including an oxide semiconductor which is capable of having stable electric characteristics and achieving high reliability, by a dehydration or dehydrogenation treatment performed on a base insulating layer provided in contact with an oxide semiconductor layer, the water and hydrogen contents of the base insulating layer can be decreased, and by an oxygen doping treatment subsequently performed, oxygen which can be eliminated together with the water and hydrogen is supplied to the base insulating layer. By formation of the oxide semiconductor layer in contact with the base insulating layer whose water and hydrogen contents are decreased and whose oxygen content is increased, oxygen can be supplied to the oxide semiconductor layer while entry of the water and hydrogen into the oxide semiconductor layer is suppressed. | 05-21-2015 |
20150187950 | SEMICONDUCTOR DEVICE - A transistor with stable electric characteristics is provided. An aluminum oxide film containing boron is formed in order to prevent hydrogen from diffusing into an oxide semiconductor film. | 07-02-2015 |
Patent application number | Description | Published |
20130042639 | METHOD OF CONTROLLING AIR CONDITIONING, AIR-CONDITIONING CONTROL SYSTEM AND AIR-CONDITIONING CONTROL APPARATUS - A method of controlling air conditioning to cool servers, the method includes selecting, when the number of operating servers is a certain threshold number or more, a first mode, in which the pressure of a cold aisle is set higher than the pressure of a hot aisle; selecting, when the number of operating servers is less than the certain threshold number, a second mode, in which the pressure of the cold aisle is set equal to the pressure of the hot aisle; and informing the operating servers of whether a current mode is the first mode or the second mode, and when the current mode is the first mode, driving fans of the servers at a minimum rotational speed in a specification, and when the current mode is the second mode, driving the fans of the servers at a rotational speed higher than the minimum rotational speed in the specification. | 02-21-2013 |
20130081048 | POWER CONTROL APPARATUS, POWER CONTROL METHOD, AND COMPUTER PRODUCT - A power control apparatus includes a processor that causes thermal fluid analysis of the amount of increase in power consumption for cooling a plurality of servers, where the increase in power consumption is consequent to an increase in the volume of tasks at each server among the servers. Based on analysis results obtained by the thermal fluid analysis, the processor selects from among the servers, a server to execute a task and causes the selected server to execute the task. | 03-28-2013 |
20130083057 | INSTALLING OPERATION SUPPORT DEVICE AND METHOD - A system stores identification information for identification of a part associated with installation information for designation of a position where the part is installed in a first apparatus; receives the identification information about the part to be read and transmits it by a second apparatus; and retrieves the received identification information from the storage unit, and generates a first composite image by combining installation information corresponding to the retrieved identification information with an image of the first apparatus. | 04-04-2013 |
20130106986 | POINTER INFORMATION PROCESSING DEVICE, COMPUTER-READABLE RECORDING MEDIUM AND CONFERENCE SYSTEM | 05-02-2013 |
20140068081 | TRANSFER DEVICE, AND TRANSFER METHOD - A transfer device allocates, within the range of the maximum communication band of a network that a plurality of groups of applications use in common, a communication band equal to or larger than the minimum band for each of the groups. Furthermore, the transfer device converts, within a communication band allocated to each group, TCP data received from a transmission source of data to UDP data, transfers the UDP data to a transmission destination, and retransmits retransmission data in response to a retransmission request of the UDP data. | 03-06-2014 |
20140071993 | TRANSFER DEVICE AND TRANSFER METHOD - A transfer device increments a value of a phase ID at predetermined time intervals, and registers a packet ID of a transmitted data packet and a phase ID on a determination table in an associated manner. When having received a response packet from a receiving-side transfer device, the transfer device determines an unarrived packet on the basis of received packet IDs contained in the received response packet and packet IDs of transmitted data packets. Then, the transfer device determines whether a data packet corresponding to the unarrived packet is lost or on-the-fly from a relationship between a phase ID of the unarrived packet and the maximum phase contained in the received response packet, and retransmits the corresponding data packet only if it is lost. | 03-13-2014 |
20140208322 | COMPUTER SYSTEM AND VIRTUAL MACHINE ARRANGING METHOD - A computer system includes plural servers in which virtual machines are arranged; plural power supply apparatuses that supply electric power to the servers; and a control apparatus that controls arrangement of the virtual machines in the servers. The control apparatus solves an integer programming problem whose objective function is total power consumption by the servers and by the power supply apparatuses, the total power consumption being described as a function of the arrangement of the virtual machines; and arranges the virtual machines based on a solution of the integer programming problem. | 07-24-2014 |
20140309961 | INFORMATION PROCESSING APPARATUS AND METHOD FOR ANALYZING THERMO-FLUID - An information processing apparatus performs a principal component analysis using a plurality of analysis results in an analysis area about thermo-fluid and computes an approximate solution approximate to a final solution by summing analysis patterns obtained by the principal component analysis under a new analysis condition. The information processing apparatus performs a thermo-fluid analysis using the computed approximate solution as an initial state under the new analysis condition. | 10-16-2014 |
20150026299 | IMAGE TRANSMITTING METHOD, PROGRAM AND APPARATUS - An image transmitting method is used to transmit image data from an image transmitting apparatus to an image receiving apparatus. The image transmitting device receives operation events generated in the image receiving device through a network. The image transmitting apparatus calculates a determination time of the image data, in a transmission control based on a previously determined transmission interval, based on an amount of the image data to be transmitted to the image receiving apparatus, information regarding the network through which the image data is transmitted, and a number of the operation events that have been received from an immediately previous transmission time until a time of transmitting the image data. The image transmitting apparatus compares the determination time with a transmission time indicating a time of transmitting the image data, and prevents a transmission of the image data when the determination time is later than the transmission time. | 01-22-2015 |