Patent application number | Description | Published |
20090141232 | OPTICAL LENS MODULE - An optical lens module includes a support frame, a liquid crystal lens group, and a aberration compensation lens group. The aberration compensation lens compensates aberrations generated by the liquid crystal lenses. The liquid crystal lens group and the fixed aberration compensation lens group are disposed on the same optical axis. The optical lens module is power-saving, easily assembling, and has a small volume, which is helpful for miniaturizing and thinning optical lens modules, and thus further helpful for miniaturizing and thinning small-size or portable devices. | 06-04-2009 |
20090279186 | MOVABLE LENS MODULE AND OPTICAL LENS MODULE - A movable lens module includes a plate type piezoelectric driving unit, a movable stage, a lens base and a lens group. The movable stage is in contact with the plate type piezoelectric driving unit, and is driven by the plate type piezoelectric driving unit to move. The lens base is disposed on the movable stage. The lens group includes at least one lens installed in the lens base. An optical lens module can be assembled by components of the movable lens module. | 11-12-2009 |
20100083746 | SWINGING APPARATUS AND ENERGY HARVESTER USING THE SAME - A swinging apparatus comprising an energy provider and a swinging mechanism disposed thereon. By means of adjusting the size and shape of the swinging mechanism and adjusting a distance between the swinging mechanism and the energy provider so as to control the ratio of the distance between the swinging mechanism and the energy provider to a characteristic value corresponding to the swing mechanism in a range between 4 and 0.25, the swinging frequency of the swinging mechanism may be adjusted automatically to comply with the variation of the motion frequency of the energy provider. The present invention further provides an energy harvester to work with the swinging apparatus and a coil to generate an induced current for power generation during the swing of the swing mechanism. In the present invention, the natural frequency of the swing mechanism may be adjusted according to the rotational velocity of the energy provider. | 04-08-2010 |
20100139767 | CHIP PACKAGE STRUCTURE AND METHOD OF FABRICATING THE SAME - A chip package structure including a heat dissipation substrate, a chip and a heterojunction heat conduction buffer layer is provided. The chip is disposed on the heat dissipation substrate. The heterojunction heat conduction buffer layer is disposed between the heat dissipation substrate and the chip. The heterojunction heat conduction buffer layer includes a plurality of pillars perpendicular to the heat dissipation substrate. The aspect ratio of each pillar is between about 3:1 and 50:1. | 06-10-2010 |
20110074563 | Swinging device and apparatus for detecting rotating status and information displaying device using the same - The present disclosure provides a swinging device having a swinging mechanism disposed on an energy provider, wherein volume and shape of the swinging mechanism and a distance between the swinging mechanism and the energy provider are adjusted so as to control the ratio of the distance and a characteristic value corresponding to the swinging mechanism in a specific range such that the swinging mechanism is capable of resonating with respect to the rotation of the energy provider. The swinging mechanism is capable of detecting the rotating frequency of the energy provider as well as combining with a display unit which is capable of displaying information with respect to the rotating status or displaying image patterns controlled according to the rotating status. | 03-31-2011 |
20110164226 | SYSTEM AND METHOD FOR PROJECTION CORRECTION - A method for projection correction includes following steps. An original image is projected as a projection image on an object. A projection-zone image including the projection image is captured from the object. A projection image outline corresponding to the projection image is obtained from the projection-zone image. An operation is performed on the projection image outline to obtain a horizontal inclination and a vertical inclination. The original image is pre-warped according to the horizontal inclination and the vertical inclination to obtain a corrected image, and the corrected image is projected on the object. | 07-07-2011 |
20120044555 | VIBRATION-ACTUATED MICRO MIRROR DEVICE - The present invention provides a vibration-actuated micro mirror device comprising a substrate having a swinging frame and a reflection mirror, and a vibration part having a first and a second vibration structures coupled to the substrate, wherein the first vibration structure is driven to generate a first complex wave formed by a first and a second wave signals while the second vibration structure is driven to generate a second complex wave formed by a third and a fourth wave signals, and the first and the third wave signals are formed with the same frequency and phase while the second and the fourth wave signals are formed with the same frequency but opposite phases. The first and the second complex waves actuate the substrate such that the swinging frame is rotated about a first axis while the reflection mirror is rotated about a second axis. | 02-23-2012 |
20120200902 | VIBRATION-ACTUATED MICRO MIRROR DEVICE - The present invention provides a vibration-actuated micro mirror device comprising a substrate having a swinging frame and a reflection mirror, and a vibration part having a first and a second vibration structures coupled to the substrate, wherein the first vibration structure is driven to generate a first complex wave formed by a first and a second wave signals while the second vibration structure is driven to generate a second complex wave formed by a third and a fourth wave signals, and the first and the third wave signals are formed with the same frequency and phase while the second and the fourth wave signals are formed with the same frequency but opposite phases. The first and the second complex waves actuate the substrate such that the swinging frame is rotated about a first axis while the reflection mirror is rotated about a second axis. | 08-09-2012 |
20130057936 | VIBRATION-ACTUATED MICRO MIRROR DEVICE - A vibration-actuated micro mirror device comprises a substrate, a swinging frame, a reflection mirror, and a vibration part. The swinging frame is rotatably arranged within a first accommodating space formed on the substrate. The reflection mirror is rotatably arranged within a second accommodating space formed on the swinging frame. The vibration part further comprises a plate coupled to the substrate, and a first and a second vibration structures. The first and the second vibration structures are coupled to the plate and are spaced a distance away from each other, wherein the first vibration structure receives a first driving signal having a first frequency and the second vibration structure receives a second driving signal having a second frequency smaller than the first frequency, thereby enabling the swinging frame to rotate about the first axis while enabling the reflection mirror to rotate about the second axis. | 03-07-2013 |
Patent application number | Description | Published |
20080291720 | SPIN TORQUE TRANSFER MRAM DEVICE - The present disclosure provides a magnetic memory element. The memory element includes a magnetic tunnel junction (MTJ) element and an electrode. The electrode includes a pinning layer, a pinned layer, and a non-magnetic conductive layer. In one embodiment, the MTJ element includes a first surface having a first surface area, and the electrode includes a second surface. In the embodiment, the second surface of the electrode is coupled to the first surface of the MTJ element such that an interface area is formed and the interface area is less than the first surface area. | 11-27-2008 |
20080310214 | DEVICE AND METHOD OF PROGRAMMING A MAGNETIC MEMORY ELEMENT - Thus, the present disclosure provides a method of programming a memory array. At least one memory cell including a magnetic element is provided. At least one current source coupled to the magnetic element is provided. A unipolar current is supplied from the at least one current source to the magnetic element at a plurality of non-zero current levels. | 12-18-2008 |
20090065883 | MRAM Device with Continuous MTJ Tunnel Layers - A method for fabricating a magnetoresistive random access memory (MRAM) device having a plurality of memory cells includes: forming a fixed magnetic layer having magnetic moments fixed in a predetermined direction; forming a tunnel layer over the fixed magnetic layer; forming a free magnetic layer, having magnetic moments aligned in a direction that is adjustable by applying an electromagnetic field, over the tunnel layer; forming a hard mask on the free magnetic layer partially covering the free magnetic layer; and unmagnetizing portions of the free magnetic layer uncovered by the hard mask for defining one or more magnetic tunnel junction (MTJ) units. | 03-12-2009 |
20090085132 | MRAM Cell Structure with a Blocking Layer for Avoiding Short Circuits - A MRAM cell structure includes a bottom electrode; a magnetic tunnel junction unit disposed on the bottom electrode; a top electrode disposed on the magnetic tunnel junction unit; and a blocking layer disposed on the top electrode, wherein the blocking layer is wider than the magnetic tunnel junction unit for preventing against formation of a short circuit between a contact and the magnetic tunnel junction unit. | 04-02-2009 |
20090290410 | SPIN TORQUE TRANSFER MRAM DEVICE - The present disclosure provides a magnetic memory element. The memory element includes a magnetic tunnel junction (MTJ) element and an electrode. The electrode includes a pinning layer, a pinned layer, and a non-magnetic conductive layer. In one embodiment, the MTJ element includes a first surface having a first surface area, and the electrode includes a second surface. In the embodiment, the second surface of the electrode is coupled to the first surface of the MTJ element such that an interface area is formed and the interface area is less than the first surface area. | 11-26-2009 |
20100067169 | CAPACITOR STRUCTURE - A capacitor structure is disclosed. The capacitor structure includes at least a D | 03-18-2010 |
20100118603 | DEVICE AND METHOD OF PROGRAMMING A MAGNETIC MEMORY ELEMENT - The present disclosure provides a non-volatile memory device. A memory device includes a first magnetic element having a fixed magnetization. The memory device also includes a second magnetic element having a non-fixed magnetization. The memory device further includes a barrier layer between the first and second magnetic elements. A unidirectional current source is electrically coupled to the first and second magnetic elements. The current source is configured to provide a first current to the first and second memory elements. The first current has a first current density and is in a first direction. The current source is also configured to provide a second current to the first and second magnetic elements. The second current has a second current density, different than the first current density, and is in the first direction. The first and second currents cause the non-fixed magnetization of the second magnetic element to toggle between substantially parallel to the fixed magnetization of the first magnetic element and between substantially antiparallel to the fixed magnetization of the first magnetic element. | 05-13-2010 |
20110001201 | SACRIFICE LAYER STRUCTURE AND METHOD FOR MAGNETIC TUNNEL JUNCTION (MTJ) ETCHING PROCESS - A magnetic tunnel junction (MTJ) etching process uses a sacrifice layer. An MTJ cell structure includes an MTJ stack with a first magnetic layer, a second magnetic layer, and a tunnel barrier layer in between the first magnetic layer and the second magnetic layer, and a sacrifice layer adjacent to the second magnetic layer, where the sacrifice layer protects the second magnetic layer in the MTJ stack from oxidation during an ashing process. The sacrifice layer does not increase a resistance of the MTJ stack. The sacrifice layer can be made of Mg, Cr, V, Mn, Ti, Zr, Zn, or any alloy combination thereof, or any other suitable material. The sacrifice layer can be multi-layered and/or have a thickness ranging from 5 Å to 400 Å. The MTJ cell structure can have a top conducting layer over the sacrifice layer. | 01-06-2011 |
20110122674 | REVERSE CONNECTION MTJ CELL FOR STT MRAM - Apparatus and methods are disclosed herein for a reverse-connection STT MTJ element of a MRAM to overcome the source degeneration effect when switching the magnetization of the MTJ element from the parallel to the anti-parallel direction. A memory cell of a MRAM having a reverse-connection MTJ element includes a switching device having a source, a gate, and a drain, and a reverse-connection MTJ device having a free layer, a fixed layer, and an insulator layer interposed between the free layer and the fixed layer. The free layer of the reverse-connection MTJ device is connected to the drain of the switching device and the fixed layer is connected to a bit line (BL). The reverse-connection MTJ device applies the lower I | 05-26-2011 |
Patent application number | Description | Published |
20080211960 | METHOD AND RELATED APPARATUS FOR IMAGE DE-INTERLACING - An image de-interlacing method comprises: (a) defining a first threshold value and a second threshold value, wherein the second threshold value is larger than the first threshold value; (b) generating a parameter according to motion level of a interlaced image; and (c) utilizing a first interpolation method and a second interpolation method to jointly process the interlaced image if the parameter is in a range between the first threshold value and the second threshold value. | 09-04-2008 |
20110001669 | Dual-band antenna and wireless network device having the same - A dual-band antenna for use in a wireless network device comprises first, second, and third radiators. The first and second radiators are connected by a stand portion. The second radiator is a generally C-shaped plate having a connecting section and a free-end portion. A ground end and an input end are provided at predetermined positions of the connecting section and are respectively and electrically connected to a grounding portion and a control circuit of a substrate. The free-end portion overlaps with the orthogonal projection of the first radiator and is parallel to the first radiator. The third radiator is electrically connected to the second radiator via a conductive post and is parallel to the second radiator. The second and third radiators are provided on the substrate while the first radiator is provided outside the substrate. The first, second, and third radiators are parallel to and spaced apart from one another. | 01-06-2011 |
20110304510 | Planar inverted-F antenna and wireless network device having the same - A planar inverted-F antenna for use in a wireless network device comprises a connecting member and two radiators. The connecting member has at least one input end and at least one ground end. Each radiator has a first end portion perpendicularly connected to one of the two ends of the connecting member, and the two radiators are parallel and correspond in shape to each other. Each radiator further has an L-shaped notch and thus forms a barb. A second end portion of each radiator is bent to form an engaging end which is generally parallel to the connecting member and configured to fasten with a substrate of the wireless network device. | 12-15-2011 |
20120170657 | COMPENSATION DE-INTERLACING IMAGE PROCESSING APPARATUS AND ASSOCIATED METHOD - A motion compensation de-interlacing image processing apparatus is provided. The apparatus includes a motion compensation module, a still compensation module, a motion detection module, and a de-interlacing blending module. The motion compensation module generates a motion compensation pixel according to at least one of a current field, a previous field, and a next field of a target pixel to be interpolated. The still compensation module generates a still compensation pixel according to the previous field and the next field of the target pixel. The motion detection module determines a motion index according to the previous field and the next field of the target pixel. The de-interlacing blending module generates the target pixel by weighted averaging the motion compensation pixel and the still compensation pixel according to the motion index. | 07-05-2012 |
20130314428 | IMAGE PROCESSING APPARATUS AND ASSOCIATED METHOD - An image processing apparatus includes a first memory, a second memory, a buffer, a fetching module and a processing module. The first memory module stores an original image having a first width. The buffer has a second width smaller than the first width. The fetching module fetches a sub-image of the original image from the first memory and stores the fetched sub-image into the buffer. The processing module performs an image processing process on the sub-image stored in the buffer to generate a processed sub-image. The processed sub-image is then stored into the second memory. | 11-28-2013 |
Patent application number | Description | Published |
20080318378 | MIM Capacitors with Improved Reliability - A capacitor and methods for forming the same are provided. The method includes forming a bottom electrode; treating the bottom electrode in an oxygen-containing environment to convert a top layer of the bottom electrode into a buffer layer; forming an insulating layer on the buffer layer; and forming a top electrode over the insulating layer. | 12-25-2008 |
20100033057 | ULTRASONIC LINEAR MOTOR - An ultrasonic linear motor includes a substrate; a vibrator disposed on the substrate having an oblique or curved face at two sides thereof forming concave receiving portions with the surfaces of the substrate; and a slider having clamping portions at two sides thereof for correspondingly clamping to the receiving portions, wherein the vibrator is for generating a driving force to the slider while connecting with a power supply, such that the clamping portions of the slider move within the receiving portions, thereby generating a linear translation. The present invention adopts a simple structure having few elements that enables easy manufacturing and integration with other elements, thus reducing manufacturing cost. | 02-11-2010 |
20100289382 | ULTRASONIC LINEAR MOTOR - An ultrasonic linear motor includes a substrate; a vibrator disposed on the substrate having an oblique or curved face at two sides thereof; and a slider having clamping portions at two sides thereof for correspondingly contacting with the two side faces of the vibrator and the substrate surfaces, wherein the vibrator is for generating a driving force to the slider while connecting with a power supply, such that the clamping portions of the slider slides with respect to the two side surfaces of the vibrator and with respect to the substrate surface, thereby generating a linear translation. The present invention adopts a simple structure having few elements that enables easy manufacturing and integration with other elements, thus reducing manufacturing cost. | 11-18-2010 |
20110143514 | MRAM cell structure - Disclosed herein is an improved memory device, and related methods of manufacturing, wherein the area occupied by a conventional landing pad is significantly reduced to around 50% to 10% of the area occupied by conventional landing pads. This is accomplished by removing the landing pad from the cell structure, and instead forming a conductive via structure that provides the electrical connection from the memory stack or device in the structure to an under-metal layer. By forming only this via structure, rather than separate vias formed on either side of a landing pad, the overall width occupied by the connective via structure from the memory stack to an under-metal layer is substantially reduced, and thus the via structure and under-metal layer may be formed closer to the memory stack (or conductors associated with the stack) so as to reduce the overall width of the cell structure. | 06-16-2011 |
20120170358 | MRAM cell structure - Disclosed herein is an improved memory device, and related methods of manufacturing, wherein the area occupied by a conventional landing pad is significantly reduced to around | 07-05-2012 |
Patent application number | Description | Published |
20090209050 | In-Situ Formed Capping Layer in MTJ Devices - A method of forming an integrated circuit includes forming magnetic tunnel junction (MTJ) layers; etching the MTJ layers to form a MTJ cell; and forming a dielectric capping layer on sidewalls of the MTJ cell, wherein the step of forming the dielectric capping layer is in-situ performed with the step of etching the MTJ layers. | 08-20-2009 |
20090303779 | Spin Torque Transfer MTJ Devices with High Thermal Stability and Low Write Currents - An integrated circuit structure includes a first fixed magnetic element; a second fixed magnetic element; and a composite free magnetic element between the first and the second fixed magnetic elements. The composite free magnetic element includes a first free layer and a second free layer. | 12-10-2009 |
20100193891 | In-Situ Formed Capping Layer in MTJ Devices - A method of forming an integrated circuit includes forming magnetic tunnel junction (MTJ) layers; etching the MTJ layers to form a MTJ cell; and forming a dielectric capping layer on sidewalls of the MTJ cell, wherein the step of forming the dielectric capping layer is in-situ performed with the step of etching the MTJ layers. | 08-05-2010 |
20100214825 | Programming MRAM Cells Using Probability Write - A method of writing a magneto-resistive random access memory (MRAM) cell includes providing a writing pulse to write a value to the MRAM cell; and verifying a status of the MRAM cell immediately after the step of providing the first writing pulse. In the event of a write failure, the value is rewritten into the MRAM cell. | 08-26-2010 |
20100254181 | Raising Programming Currents of Magnetic Tunnel Junctions Using Word Line Overdrive and High-k Metal Gate - A method of operating magneto-resistive random access memory (MRAM) cells includes providing an MRAM cell, which includes a magnetic tunneling junction (MTJ) device; and a selector comprising a source-drain path serially coupled to the MTJ device. The method further includes applying an overdrive voltage to a gate of the selector to turn on the selector. | 10-07-2010 |
20100265759 | Raising Programming Current of Magnetic Tunnel Junctions by Applying P-Sub Bias and Adjusting Threshold Voltage - A method of operating magneto-resistive random access memory (MRAM) cells includes providing an MRAM cell, which includes a magnetic tunneling junction (MTJ) device and a word line selector having a source-drain path serially coupled to the MTJ device. A negative substrate bias voltage is connected to a body of the word line selector to increase the drive current of the word line selector. The threshold voltage of the word line selector is also reduced. | 10-21-2010 |
20120127788 | MRAM Cells and Circuit for Programming the Same - A circuit includes magneto-resistive random access memory (MRAM) cell and a control circuit. The control circuit is electrically coupled to the MRAM cell, and includes a current source configured to provide a first writing pulse to write a value into the MRAM cell, and a read circuit configured to measure a status of the MRAM cell. The control circuit is further configured to verify whether a successful writing is achieved through the first writing pulse. | 05-24-2012 |
20120281464 | Raising Programming Currents of Magnetic Tunnel Junctions Using Word Line Overdrive and High-k Metal Gate - A method of operating magneto-resistive random access memory (MRAM) cells includes providing an MRAM cell, which includes a magnetic tunneling junction (MTJ) device; and a selector comprising a source-drain path serially coupled to the MTJ device. The method further includes applying an overdrive voltage to a gate of the selector to turn on the selector. | 11-08-2012 |
Patent application number | Description | Published |
20080230531 | HEAT BLOCK - A heat block for holding an electronic device is disclosed. The heat block comprises a base and at least one discharge device. The discharge device is disposed on the base. The discharge device is electrically conductive and is grounded. When the electronic device is placed on the base, the discharge device is in contact with an electrical contact of the electronic device. | 09-25-2008 |
20150041874 | MIM Capacitors with Improved Reliability - A capacitor and methods for forming the same are provided. The method includes forming a bottom electrode; treating the bottom electrode in an oxygen-containing environment to convert a top layer of the bottom electrode into a buffer layer; forming an insulating layer on the buffer layer; and forming a top electrode over the insulating layer. | 02-12-2015 |
20150115382 | Image Sensor Comprising Reflective Guide Layer and Method of Forming the Same - Various structures of image sensors are disclosed, as well as methods of forming the image sensors. According to an embodiment, a structure comprises a substrate comprising photo diodes, an oxide layer on the substrate, recesses in the oxide layer and corresponding to the photo diodes, a reflective guide material on a sidewall of each of the recesses, and color filters each being disposed in a respective one of the recesses. The oxide layer and the reflective guide material form a grid among the color filters, and at least a portion of the oxide layer and a portion of the reflective guide material are disposed between neighboring color filters. | 04-30-2015 |
20150155322 | IMAGE SENSOR WITH REDUCED OPTICAL PATH - Among other things, one or more image sensors and techniques for forming image sensors are provided. An image sensor comprises a photodiode array configured to detect light. The image sensor comprises an oxide grid comprising a first oxide grid portion and a second oxide grid portion. A metal grid is formed between the first oxide grid portion and the second oxide grid portion. The oxide grid and the metal grid define a filler grid. The filler grid comprises a filler grid portion, such as a color filter, that allows light to propagate through the filler gird portion to an underlying photodiode. The oxide grid and the metal grid confine or channel the light within the filler gird portion. The oxide grid and the metal grid are formed such that the filler grid provides a relatively shorter propagation path for the light, which improves light detection performance of the image sensor. | 06-04-2015 |