Patent application number | Description | Published |
20100329041 | SEMICONDUCTOR MEMORY DEVICE HAVING POWER-SAVING EFFECT - A semiconductor memory device includes a memory cell array, a controller, and a data input/output (I/O) unit. The memory cell array includes a plurality of memory cells and is configured to store data. The controller is configured to enable a write clock signal in response to an active command when a write latency of the semiconductor device is less than a reference write latency and disable the write clock signal during a disabling period in which read data is output from the semiconductor device. The data I/O unit is configured to receive data in response to the write clock signal and output the data to the memory cell array. | 12-30-2010 |
20100329049 | SEMICONDUCTOR MEMORY DEVICE HAVING A LATENCY CONTROLLER - A semiconductor memory device includes a latency controller which provides a power-saving effect. The latency controller includes a first-in first-out (FIFO) register. After a read command is applied, when a precharge command or power-down command is applied, the latency controller outputs a latency signal corresponding to the applied read command and blocks application of sampling and transmission clock signals to the FIFO register. | 12-30-2010 |
20110001562 | HIGH SPEED LINEAR DIFFERENTIAL AMPLIFIER - A high speed linear differential amplifier (HSLDA) having automatic gain adjustment to maximize linearity regardless of manufacturing process, changes in temperature, or swing width change of the input signal. The HSLDA comprises a differential amplifier, and a control signal generator including a replica differential amplifier, a reference voltage generator, and a comparator. The comparator outputs a control signal that automatically adjusts the gain of the high speed linear differential amplifier and of the replica differential amplifier. The replica differential amplifier receives predetermined complementary voltages as input signals and outputs a replica output signal to the comparator. The reference voltage generator outputs a voltage to the comparator at which linearity of the output signal of the differential amplifier is maximized. The control signal equalizes the voltage level of the replica output signal and the reference voltage, and controls the gain of the differential amplifier. | 01-06-2011 |
20110242916 | ON-DIE TERMINATION CIRCUIT, DATA OUTPUT BUFFER AND SEMICONDUCTOR MEMORY DEVICE - An on-die termination circuit includes a termination resistor unit connected to an external pin, and a termination control unit connected to the termination resistor unit. The termination resistor unit provides termination impedance to a transmission line connected to the external pin. The termination control unit varies the termination impedance in response to a plurality of bits of strength code associated with a data rate. | 10-06-2011 |
20110242924 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME - A semiconductor memory device includes a memory cell array, an address control unit and a logic circuit. The memory cell array includes a plurality of banks which are divided into a first bank block and a second bank block. The address control unit accesses the memory cell array. The logic circuit controls the address control unit based on a command and an address signal such that the first and second bank blocks commonly operate in a first operation mode, and the first and second bank blocks individually operate in a second operation mode. | 10-06-2011 |
20110243289 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME - A method of tuning a phase of a clock signal includes performing data training on a plurality of data pins through which data are input and output, in synchronization with a data clock signal; determining one of the data pins to be a representative pin; performing clock and data recovery (CDR) on read data of the representative pin; and adjusting a phase of the data clock signal based on the CDR. | 10-06-2011 |
20110246857 | MEMORY SYSTEM AND METHOD - A memory system includes a memory controller and a memory device. The memory device exchanges data through a first channel with the memory controller, exchanges a first cyclic redundancy check (CRC) code associated with the data through a second channel with the memory controller, and receives a command/address packet including a second CRC code associated with a command/address from the memory controller through a third channel. | 10-06-2011 |
20110309468 | SEMICONDUCTOR CHIP PACKAGE AND METHOD OF MANUFACTURING THE SAME - A semiconductor chip package includes a substrate, a first layer disposed on the substrate and a second layer substantially similar to and disposed on the first layer. The first layer has a first input/output (I/O) circuit, a first through-via connected to the first input/output (I/O) circuit and a second through-via that is not connected to the first I/O circuit. The second layer has a second I/O circuit, a third through-via connected to the second I/O circuit and a fourth through-via that is not connected to the second I/O circuit. The first through-via is connected to the fourth through-via, and the second through-via is connected to the third through-via. The package maybe fabricated by stacking the layers, and changing the orientation of the second layer relative to the first to ensure that the first through-via is connected to the fourth through-via, and the second through-via is connected to the third through-via. | 12-22-2011 |
20120086490 | INTEGRATED CIRCUIT DEVICES USING POWER SUPPLY CIRCUITS WITH FEEDBACK FROM A REPLICA LOAD - An integrated circuit device includes an external power supply input configured to be coupled to an external power supply and a digital circuit, such as a clock signal generator circuit, that generates noise at a power supply input thereof. The device further includes a replica load circuit and a power supply circuit coupled to the external power supply input, to a power supply input of the digital circuit and to a power supply input of the replica load circuit. The power supply circuit is configured to selectively couple the external power supply node to the power supply input of the digital circuit responsive to a voltage at the power supply input of the replica load circuit. The replica load circuit may be configured to provide a load that varies responsive to a voltage at the power supply input of the digital circuit. | 04-12-2012 |
20120087194 | DATA WRITE TRAINING METHOD AND SEMICONDUCTOR DEVICE PERFORMING THE SAME - Embodiments may be directed to a method of operating a semiconductor device, the method including receiving a first write training command, receiving a first write data responsive to the first write training command through a first data line, and transmitting the first write data through a second data line. Transmitting the first write data is performed without an additional training command. | 04-12-2012 |
20120117443 | DATA PROCESSING DEVICE AND METHOD USING ERROR DETECTION CODE, METHOD OF COMPENSATING FOR DATA SKEW, AND SEMICONDUCTOR DEVICE HAVING THE DATA PROCESSING DEVICE - A data processing device for transmitting a first data includes a data generator configured to provide the first data, a cyclic redundancy check (CRC) generator configured to generate a CRC information having at least one bit whose binary value is modified in response to a toggle information, and a data transmitter configured to combine the CRC information and the first data as a combined data and output the combined data in serial. | 05-10-2012 |
20130117602 | SEMICONDUCTOR MEMORY DEVICE AND SYSTEM HAVING REDUNDANCY CELLS - In one embodiment, the memory device includes a memory cell array having at least a first memory cell group, a second memory cell group and a redundancy memory cell group. The first memory cell group includes a plurality of first memory cells associated with a first data line, the second memory cell group includes a plurality of second memory cells associated with a second data line, and the redundancy memory cell group includes a plurality of redundancy memory cells associated with a redundancy data line. A data line selection circuit is configured to provide a data path between an input/output node and one of the first data line, the second data and the redundancy data line. | 05-09-2013 |
20130235683 | DATA WRITE TRAINING METHOD - Embodiments may be directed to a method of operating a semiconductor device, the method including receiving a first write training command, receiving a first write data responsive to the first write training command through a first data line, and transmitting the first write data through a second data line. Transmitting the first write data is performed without an additional training command. | 09-12-2013 |
20140013183 | MEMORY DEVICES WITH SELECTIVE ERROR CORRECTION CODE - An error correction apparatus includes an error correction circuit configured to selectively perform error correction on a portion of data that is at least one of written to and read from a plurality of memory cells of a memory device. The portion of data is at least one of written to and read from a subset of the plurality of memory cells, and the subset includes only fail cells among the plurality of memory cells. The error correction apparatus further includes a fail address storage circuit configured to store address information for the fail cells. | 01-09-2014 |
20140019833 | MEMORY SYSTEM AND METHOD - A memory system includes a memory controller and a memory device. The memory device exchanges data through a first channel with the memory controller, exchanges a first cyclic redundancy check (CRC) code associated with the data through a second channel with the memory controller, and receives a command/address packet including a second CRC code associated with a command/address from the memory controller through a third channel. | 01-16-2014 |
20140032826 | METHOD OF TRAINING MEMORY CORE AND MEMORY SYSTEM - A method of training a memory device included in a memory system is provided. The method includes testing memory core parameters for a memory core of the memory device during a booting-up sequence of the memory system; determining trimmed memory core parameters based on the test results; storing the determined trimmed memory core parameters; and applying the trimmed memory core parameter to the memory device during a normal operation of the memory device. | 01-30-2014 |
20140089574 | SEMICONDUCTOR MEMORY DEVICE STORING MEMORY CHARACTERISTIC INFORMATION, MEMORY MODULE AND MEMORY SYSTEM HAVING THE SAME, AND OPERATING METHOD OF THE SAME - A semiconductor memory device storing memory characteristic information, a memory module including the semiconductor memory device, a memory system, and an operating method of the semiconductor memory device. The semiconductor memory device may include a cell array including a plurality of areas; a command decoder configured to decode a command and generate an internal command; and an information storage unit configured to store characteristic information of at least one of the plurality of areas. When a first command and a first row address accompanying the first command are received, characteristic information of an area corresponding to the first row address is provided to an outside. | 03-27-2014 |
20140108716 | DYNAMIC RANDOM ACCESS MEMORY FOR STORING RANDOMIZED DATA AND METHOD OF OPERATING THE SAME - A dynamic random access memory (DRAM) includes a memory cell array, a data input/output circuit, and a data randomizer configured to randomize data to be stored in the memory cell array. The data randomizer includes an encoder configured to generate write data by encoding input data received from the data input/output circuit using a randomization code and to output the write data to the memory cell array. The data randomizer further includes a decoder configured to generate output data by decoding read data received from the memory cell array using the randomization code and to output the output data to the data input/output circuit. | 04-17-2014 |
20140140153 | REPAIR CONTROL CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME - A repair control circuit of controlling a repair operation of a semiconductor memory device includes a row matching block and a column matching block. The row matching block stores fail group information indicating one or more fail row groups among a plurality of row groups. The row groups are determined by grouping a plurality of row addresses corresponding to a plurality of wordlines. The row matching block generates a group match signal based on input row address and the fail group information, such that the group match signal indicates the fail row group including the input row address. The column matching block stores fail column addresses of the fail memory cells, and generates a repair control signal based on input column address, the group match signal and the fail column addresses, such that the repair control signal indicates whether the repair operation is executed or not. | 05-22-2014 |
20140146624 | MEMORY MODULES AND MEMORY SYSTEMS - In one example embodiment, a memory module includes a plurality of memory devices and a buffer chip configured to manage the plurality of memory device. The buffer chip includes a memory management unit having an error correction unit configured to perform error correction operation on each of the plurality of memory devices. Each of the plurality of memory devices includes at least one spare column that is accessible by the memory management unit, and the memory management unit is configured to correct errors of the plurality of memory devices by selectively using the at least one spare column based on an error correction capability of the error correction unit. | 05-29-2014 |
20140149652 | MEMORY SYSTEM AND METHOD OF MAPPING ADDRESS USING THE SAME - In one example embodiment, a memory system includes a memory module and a memory controller. The memory module is configured generate density information of the memory module based on a number of the bad pages of the memory module, the bad pages being pages that have a fault. The memory controller is configured to map a continuous physical address to a dynamic random access memory (dram) address of the memory module based on the density information received from the memory module. | 05-29-2014 |
20140241093 | DEVICES, SYSTEMS AND METHODS WITH IMPROVED REFRESH ADDRESS GENERATION - A refresh address generator may include a lookup table including a first portion storing a first group of addresses associated with a first data retention time, and a second portion storing a second group of addresses associated with a second data retention time different from the first data retention time, wherein the addresses of the first portion are more frequently accessed than the addresses of the second portion to refresh the memory cells corresponding to the addresses. Systems and methods may also implement such refresh address generation. | 08-28-2014 |
20140241098 | MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME - A memory device may be provided which includes a memory cell array including a plurality of sub arrays each sub array having a plurality of memory cells connected to bit lines; an address buffer configured to receive a row address and a column address; and a column decoder configured to receive the column address from the address buffer and, for each of the sub arrays, to select a column selection line corresponding to the column address, from among a plurality of column selection lines, based on different offset values applied to the sub arrays, respectively. The selected column selection lines correspond to bit lines having different physical locations, respectively, according to the different offset values. | 08-28-2014 |
20140247677 | METHOD OF ACCESSING SEMICONDUCTOR MEMORY AND SEMICONDUCTOR CIRCUIT - A method of accessing a semiconductor memory is disclosed which includes outputting a row address and an active command to the semiconductor memory; outputting a column address and a read or write command to the semiconductor memory; and outputting a spare access command to the semiconductor memory to access data from a spare memory cell at a timing based on an additive latency of the semiconductor memory. Related devices and systems are also disclosed. | 09-04-2014 |
20140266299 | CIRCUIT AND METHOD FOR ON-DIE TERMINATION, AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME - An on-die termination (ODT) circuit includes a calibration unit, an offset-code generating unit, an adder, and an ODT unit. The calibration unit generates a pull-up code and a pull-down code. The offset-code generates a pull-up offset code and a pull-down offset code based on a mode-register-set signal, the pull-up code, and the pull-down code. The adder adds the pull-up offset code and the pull-down offset code to the pull-up code and the pull-down code, respectively, and generates a pull-up calibration code and a pull-down calibration code. The ODT unit changes ODT resistance in response to the pull-up calibration code and the pull-down calibration code. | 09-18-2014 |
20140317469 | MEMORY DEVICE FOR PERFORMING ERROR CORRECTION CODE OPERATION AND REDUNDANCY REPAIR OPERATION - Provided are a memory device and a memory module, which perform both an ECC operation and a redundancy repair operation. The memory device repairs a single-bit error due to a ‘fail’ cell by using an error correction code (ECC) operation, and also repairs the ‘fail’ cell by using a redundancy repair operation when the ‘fail’ cell is not repairable by the ECC operation. The redundancy repair operation includes a data line repair and a block repair. The ECC operation may change a codeword corresponding to data per one unit of memory cells including the ‘fail’ cell, and may also change the size of parity bits regarding the changed codeword. | 10-23-2014 |
20140355332 | VOLATILE MEMORY DEVICE AND REFRESH METHOD THEREOF - Provided is a refresh method of a volatile memory device. The method includes: detecting a number of disturbances that affect a second memory area as the number of accesses to a first memory area is increased; outputting an alert signal from the volatile memory device to an outside of the volatile memory device when the detected number of disturbances reach a reference value; and performing a refresh operation on the second memory area in response to the alert signal. | 12-04-2014 |
20150067448 | METHOD OF OPERATING MEMORY DEVICE AND METHODS OF WRITING AND READING DATA IN MEMORY DEVICE - In a method of operating a memory device, a command and a first address from a memory controller are received. A read code word including a first set of data corresponding to the first address, a second set of data corresponding to a second address and a read parity data is read from a memory cell array of the memory device. Corrected data are generated by operating error checking and correction (ECC) using an ECC circuit based on the read cord word. | 03-05-2015 |
20150117083 | MEMORY DEVICE - A memory device including: a memory cell array including normal memory cells and spare memory cells arranged in rows and columns including normal columns including the normal memory cells and at least one spare column including spare memory cells, a segment match determining circuit configured to compare a segment address with row address information corresponding to a failed segment and to generate a load control signal, and a column match determining circuit configured to compare column address information corresponding to a failed column in response to the load control signal with a column address and to generate a column address replacement control signal, wherein the memory cells connected to fail columns of the fail segment are replaced with memory cells connected to columns of the spare memory cells in response to the column address replacement control signal. | 04-30-2015 |
20150134895 | SEMICONDUTOR MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME - A semiconductor memory device may include a cell array comprising a plurality of memory cells, each memory cell connected to a word line and a bit line, the cell array divided into a plurality of blocks, each block including a plurality of word lines, the plurality of blocks including at least a first defective block; a nonvolatile storage circuit configured to store address information of the first defective block, and to output the address information to an external device; and a fuse circuit configured to cut off an activation of word lines of the first defective block. | 05-14-2015 |
20150213873 | INJECTION-LOCKED PHASE LOCKED LOOP CIRCUITS USING DELAY LOCKED LOOPS - An injection-locked phase-locked loop (ILPLL) circuit includes a delay-locked loop (DLL) and an ILPLL. The DLL is configured to generate a DLL clock by performing a delay-locked operation on a reference clock. The ILPLL includes a voltage-controlled oscillator (VCO), and is configured to generate an output clock by performing an injection synchronous phase-locked operation on the reference clock. The DLL clock is injected into the VCO as an injection clock of the VCO. | 07-30-2015 |
20150243338 | MEMORY DEVICE AND MEMORY SYSTEM HAVING THE SAME - A memory device includes a memory cell array, an intensively accessed row detection circuit, and a refresh control circuit. The memory cell array includes a plurality of memory cell rows. The intensively accessed row detection circuit generates an intensively accessed row address indicating an intensively accessed memory cell row among the plurality of memory cell rows based on an accumulated access time for each of the plurality of memory cell rows. The refresh control unit preferentially refreshes neighboring memory cell rows adjacent to the intensively accessed memory cell row indicated by the intensively accessed row address when receiving the intensively accessed row address from the intensively accessed row detection unit. The memory device effectively reduces a rate of data loss. | 08-27-2015 |
20150309743 | SEMICONDUCTOR MEMORY DEVICES AND MEMORY SYSTEMS INCLUDING THE SAME - A semiconductor memory device includes a control logic and a memory cell array in which a plurality of memory cells are arranged. The memory cell array includes a plurality of bank arrays, and each of the plurality of bank arrays includes a plurality of sub-arrays. The control logic controls an access to the memory cell array based on a command and an address signal. The control logic dynamically sets a keep-away zone that includes a plurality of memory cell rows which are deactivated based on a first word-line when the first word-line is enabled. The first word-line is coupled to a first memory cell row of a first sub-array of the plurality of sub-arrays. Therefore, increased timing parameters may be compensated, and parallelism may be increased. | 10-29-2015 |
20160064056 | SEMICONDUCTOR MEMORY DEVICES AND MEMORY SYSTEMS INCLUDING THE SAME - A semiconductor memory device includes a memory cell array, sub word-line drivers and power selection switches. The memory cell array includes memory cell rows coupled to word lines. The sub word line drivers are coupled to the word lines. The power selection switches are coupled to the sub word-line drivers. Each power selection switch controls a deactivation voltage level of a first word-line activated from the word-lines and an off-voltage level of a second word line adjacent to the first word line so that the deactivation voltage level and the off-voltage level have at least one of a ground voltage, a first negative voltage and a second negative voltage. The ground voltage, the first negative voltage and the second negative voltage have different voltage levels from each other. | 03-03-2016 |