Patent application number | Description | Published |
20110079776 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A display device includes a gate pattern, a semiconductor pattern, a source pattern and a pixel electrode are provided. The gate pattern is formed on a base substrate and includes a gate line and a gate electrode. The semiconductor pattern is formed on the base substrate having the gate pattern and includes an oxide semiconductor. The source pattern is formed from a data metal layer and formed on the base substrate having the semiconductor pattern, and includes a data line, a source electrode and a drain electrode. The data metal layer includes a first copper alloy layer, and a lower surface of the data metal layer substantially coincides with an upper surface of the semiconductor pattern. The pixel electrode is formed on the base substrate having the source pattern and electrically connected to the drain electrode. Thus, manufacturing processes may be simplified, and reliability may be improved. | 04-07-2011 |
20120104384 | THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - A thin-film transistor (TFT) includes a gate electrode, an oxide semiconductor pattern, a source electrode, a drain electrode and an etch stopper. The gate electrode is formed on a substrate. The oxide semiconductor pattern is disposed in an area overlapping with the gate electrode. The source electrode is partially disposed on the oxide semiconductor pattern. The drain electrode is spaced apart from the source electrode, faces the source electrode, and is partially disposed on the oxide semiconductor pattern. The etch stopper has first and second end portions. The first end portion is disposed between the oxide semiconductor pattern and the source electrode, and the second end portion is disposed between the oxide semiconductor pattern and the drain electrode. A sum of first and second overlapping length is between about 30% and about 99% of a total length of the etch stopper. | 05-03-2012 |
Patent application number | Description | Published |
20100155730 | THIN FILM TRANSISTOR DISPLAY PANEL AND MANUFACTURING METHOD THEREOF - In the manufacturing process of the thin film transistor array panel according to an exemplary embodiment of the present invention using three masks, the metal oxide semiconductor or the transparent conductive oxide is used, thereby executing an efficient lift-off process. | 06-24-2010 |
20100270554 | METHOD OF REFORMING A METAL PATTERN, ARRAY SUBSTRATE, AND METHOD OF MANUFACTURING THE ARRAY SUBSTRATE - A method of reforming a metal pattern for improving the productivity and reliability of a manufacturing process, an array substrate and a method of manufacturing the array substrate are disclosed. In the method, a first wiring pattern is formed on an insulation substrate. The first wiring pattern is removed. A second wiring pattern is formed on an embossed pattern by using the embossed pattern as an alignment mask. The embossed pattern is defined by a recess formed on a surface of the insulation substrate. Accordingly, the insulation substrate having the recess formed thereon may not be discarded, and may be reused in forming the first wiring pattern. In addition, the embossed pattern defined by the recess is used as an alignment mask, so that the alignment reliability of a metal pattern may be improved. | 10-28-2010 |
20110193076 | THIN FILM TRANSISTOR PANEL AND FABRICATING METHOD THEREOF - A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper. | 08-11-2011 |
20120018720 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate includes a gate line extending in a first direction on a base substrate, a data line on the base substrate and extending in a second direction crossing the first direction, a gate insulating layer on the gate line, a thin-film transistor and a pixel electrode. The thin-film transistor includes a gate electrode electrically connected the gate line, an oxide semiconductor pattern, and source and drain electrodes on the oxide semiconductor pattern and spaced apart from each other. The oxide semiconductor pattern includes a first semiconductor pattern including indium oxide and a second semiconductor pattern including indium-free oxide. The pixel electrode is electrically connected the drain electrode. | 01-26-2012 |
20120037906 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME - A thin film transistor array substrate capable of reducing degradation of a device due to degradation of an oxide semiconductor pattern and a method of fabricating the same are provided. The thin film transistor array substrate may include an insulating substrate on which a gate electrode is formed, a gate insulating film formed on the insulating substrate, an oxide semiconductor pattern disposed on the gate insulating film, an anti-etching pattern formed on the oxide semiconductor pattern, and a source electrode and a drain electrode formed on the anti-etching pattern. The oxide semiconductor pattern may include an edge portion positioned between the source electrode and the drain electrode, and the edge portion may include at least one conductive region and at least one non-conductive region. | 02-16-2012 |
20120037910 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate includes; a gate pattern including a gate electrode disposed on a substrate, a gate insulation layer disposed on the substrate and the gate pattern, an insulation pattern including; a first thickness part disposed on a first area of the gate insulation layer overlapping the gate electrode and a second thickness part disposed on a second area of the gate insulation layer adjacent to the first area, an oxide semiconductor pattern disposed on the first thickness part of the first area, an etch stopper disposed on the oxide semiconductor pattern, a source pattern including a source electrode and a drain electrode which contact the oxide semiconductor pattern, and a pixel electrode which contacts the drain electrode. | 02-16-2012 |
20120037911 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate includes a gate wire formed on an insulating substrate, a semiconductor pattern formed on the gate wire and containing a metal oxynitride compound, and a data wire formed on the semiconductor pattern to cross the gate wire. The semiconductor pattern has a carrier number density ranging from 10 | 02-16-2012 |
20120146029 | THIN FILM TRANSISTOR ARRAY PANEL - A thin film transistor array panel includes an insulating substrate, a gate line disposed on the insulating substrate having a gate electrode, a first gate insulating layer disposed on the gate line and made of silicon nitride, a second gate insulating layer disposed on the first gate insulating layer and made of silicon oxide, an oxide semiconductor disposed on the second gate insulating layer, a data line disposed on the oxide semiconductor and having a source electrode, a drain electrode disposed on the oxide semiconductor and facing the source electrode, and a pixel electrode that is connected to the drain electrode. A thickness of the second gate insulating layer may range from 200 Å to less than 500 Å. | 06-14-2012 |
20140209903 | THIN FILM TRANSISTOR PANEL HAVING AN ETCH STOPPER ON SEMICONDUCTOR - A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper. | 07-31-2014 |
20150318312 | THIN FILM TRANSISTOR PANEL HAVING AN ETCH STOPPER ON SEMICONDUCTOR - A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper. | 11-05-2015 |
20150318317 | THIN FILM TRANSISTOR PANEL HAVING AN ETCH STOPPER ON SEMICONDUCTOR - A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper. | 11-05-2015 |
Patent application number | Description | Published |
20100120209 | ETCHANT COMPOSITION, AND METHOD OF FABRICATING METAL PATTERN AND THIN FILM TRANSISTOR ARRAY PANEL USING THE SAME - An etchant composition is provided. The etchant composition includes about 40 to about 65 wt % of phosphoric acid, about 2 to about 5 wt % of nitric acid, about 2 to about 20 wt % of acetic acid, about 0.1 to about 2 wt % of a compound containing phosphate, about 0.1 to about 2 wt % of a compound simultaneously containing an amino group and a carboxyl group, and a remaining weight percent of water for the total weight of the composition. | 05-13-2010 |
20100149476 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate includes; a base substrate, a deformation preventing layer disposed on a lower surface of the base substrate, wherein the deformation preventing layer applies a force to the base substrate to prevent the base substrate from bending, a gate line disposed on an upper surface of the base substrate, a data line disposed on the base substrate, and a pixel electrode disposed on the base substrate. | 06-17-2010 |
20100151610 | COMPOSITION FOR PHOTORESIST STRIPPER AND METHOD OF FABRICATING THIN FILM TRANSISTOR ARRAY SUBSTRATE - A composition for a photoresist stripper and a method of fabricating a thin film transistor array substrate are provided according to one or more embodiments. In one or more embodiments, the composition includes about 5-30 weight % of a chain amine compound, about 0.5-10 weight % of a cyclic amine compound, about 10-80 weight % of a glycol ether compound, about 5-30 weight % of distilled water, and about 0.1-5 weight % of a corrosion inhibitor. | 06-17-2010 |
Patent application number | Description | Published |
20160064412 | DISPLAY SUBSTRATE AND METHOD OF FABRICATING THE SAME - A display substrate including a lower common electrode disposed on a substrate, an insulating layer disposed on the lower common electrode, a gate pattern including a gate electrode disposed on the insulating layer and a common electrode contact part and a direct contact part spaced apart from the gate electrode, a gate insulating layer disposed on the gate pattern, a semiconductor layer disposed on the gate insulating layer, an etch stopping layer disposed on the gate insulating layer, source and drain electrodes disposed on the etch stopping layer, pixel part extending from the source and drain electrodes, a first conductive layer connected to the common electrode contact part, a second conductive layer connected to the direct contact part, and a passivation layer disposed on the source and drain electrodes, the first conductive layer, and the second conductive layer. | 03-03-2016 |
20160064414 | DISPLAY SUBSTRATE AND METHOD OF FABRICATING THE SAME - Disclosed are a display substrate, of which productivity is improved by decreasing five mask (M) processes utilized for fabricating the display substrate used in a liquid crystal display device in a horizontal field (Plane to Line Switching (PLS)) mode to four mask processes, and a method of fabricating the same. | 03-03-2016 |
20160064420 | DISPLAY SUBSTRATE AND METHOD OF FABRICATING THE SAME - A display substrate and its fabricating method have been disclosed. In a horizontal-field-mode liquid crystal display device, while maintaining five mask processes, additional direct contact has been formed to implement a narrow bezel. | 03-03-2016 |