Yoshiyuki Watanabe
Yoshiyuki Watanabe, Tokyo JP
Patent application number | Description | Published |
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20100008815 | STEEL SUPERIOR IN CTOD PROPERTIES OF WELD HEAT-AFFECTED ZONE AND METHOD OF PRODUCTION OF SAME - The present invention provides high strength steel having unprecedentedly superior CTOD (fracture toughness) properties satisfying not only the CTOD properties of the FL zone at −60° C., but also the CTOD properties of the ICHAZ zone in small and medium heat input multilayer welding etc. and a method of production of the same. | 01-14-2010 |
20100132855 | FIRE-RESISTANT STEEL SUPERIOR IN WELD JOINT REHEAT EMBRITTLEMENT RESISTANCE AND TOUGHNESS AND METHOD OF PRODUCTION OF SAME - The present invention provides high temperature strength and fire-resistant steel superior in weld joint reheat embrittlement resistance and toughness which is produced using steel of a room temperature strength of the 400 to 600N/mm | 06-03-2010 |
20100206440 | METHOD OF PRODUCTION OF 780 MPA CLASS HIGH STRENGTH STEEL PLATE EXCELLENT IN LOW TEMPERATURE TOUGHNESS - A method of production of 780 MPa class high strength steel plate excellent low temperature toughness comprising heating a steel slab of containing, by mass %, C: 0.06 to 0.15%, Si: 0.05 to 0.35%, Mn: 0.60 to 2.00%, P: 0.015% or less, S: 0.015% or less, Cu: 0.1 to 0.5%, Ni: 0.1 to 1.5%, Cr: 0.05 to 0.8%, Mo: 0.05 to 0.6%, Nb: less than 0.005%, V: 0.005 to 0.060%, Ti: less than 0.003%, Al: 0.02 to 0.10%, B: 0.0005 to 0.003%, and N: 0.002 to 0.006% to 1050° C. to 1200° C. in temperature, hot rolling ending at 870° C. or more, waiting for 10 seconds to 90 seconds, then cooling from 840° C. or more in temperature by a 5° C./s or more cooling rate to 200° C., then tempering at 450° C. to 650° C. in temperature for 20 minutes to 60 minutes. | 08-19-2010 |
20110002808 | FIRE-RESISTANT STEEL MATERIAL SUPERIOR IN WELD HEAT AFFECTED ZONE REHEAT EMBRITTLEMENT RESISTANCE AND LOW TEMPERATURE TOUGHNESS AND METHOD OF PRODUCTION OF SAME - The present invention provides a fire-resistant steel material superior in weld heat affected zone reheat embrittlement resistance and low temperature toughness when welded by large heat input and exposed to fire and a method of production of the same, that is, a material containing C: 0.012 to 0.050%, Mn: 0.80 to 2.00%, Cr: 0.80 to 1.90%, and Nb: 0.01 to less than 0.05%, restricting Cu to 0.10% or less, containing suitable quantities of Si, N, Ti, and Al, restricting the contents of Mo, B, P, S, and O, and having a balance of Fe and unavoidable impurities, having contents of C, Mn, Cr, Nb, and Cu satisfying −1200C−20Mn+30Cr−330Nb−120Cu≧−80, having a steel structure as observed by an optical microscope of an area fraction of 80% or more of a ferrite phase, and having a balance of the steel structure of a bainite phase, martensite phase, and mixed martensite-austenite structure. | 01-06-2011 |
20110262298 | STEEL FOR WELDED STRUCTURES EXCELLENT IN HIGH TEMPERATURE STRENGTH AND LOW TEMPERATURE TOUGHNESS AND METHOD OF PRODUCTION OF SAME - By heating a steel material comprising C: 0.003 to 0.05%, Si: 0.60% or less, Mn: 0.6 to 2.0%, P: 0.020% or less, S: 0.010% or less, Cr: 0.20 to 1.5%, Nb: 0.005 to 0.05%, Al: 0.060% or less, and N: 0.001 to 0.006%, further limiting, as an impurity, Mo to 0.03% or less, having a balance of iron and unavoidable impurities, and having a weld cracking parameter P | 10-27-2011 |
20110268601 | STEEL FOR WELDED STRUCTURE AND PRODUCING METHOD THEREOF - A steel for a welded structure includes the following composition: by mass %, C at a C content [C] of 0.015 to 0.045%; Si at a Si content [Si] of 0.05 to 0.20%; Mn at a Mn content [Mn] of 1.5 to 2.0%; Ni at a Ni content [Ni] of 0.10 to 1.50%; Ti at a Ti content [Ti] of 0.005 to 0.015%; O at an O content [O] of 0.0015 to 0.0035%; and N at a N content [N] of 0.002 to 0.006%, and a balance composed of Fe and unavoidable impurities. In the steel for a welded structure, the P content [P] is limited to 0.008% or less, the S content [S] is limited to 0.005% or less, the Al content [Al] is limited to 0.004% or less, the Nb content [Nb] is limited to 0.005% or less, the Cu content [Cu] is limited to 0.24% or less, the V content [V] is limited to 0.020% or less, and a steel composition parameter P | 11-03-2011 |
20110276185 | USE-SIDE UNIT AND AIR CONDITIONER - A use-side unit and an air conditioner that can feed out air at a target temperature into a target space are provided. A use-side evaporator that recovers moisture obtained by cooling and condensing the air to be fed out into the space to be air-conditioned or the like and dehumidifies it so as to obtain target relative humidity, a use-side condenser that heats the air having passed through the use-side evaporator by heat exchange, adjusts it to a target dry-bulb temperature and feeds it out into the space to be air-conditioned or the like, and a use-side controller that calculates a correction value if a difference between a dry-bulb temperature according to the detection of a temperature detector that detects a dry-bulb temperature of the air to be fed out into the target space and the target dry-bulb temperature is larger than a predetermined value and performs processing to correct a target intermediate dry-bulb temperature. | 11-10-2011 |
20120027637 | STEEL FOR WELDED STRUCTURE AND PRODUCING METHOD THEREOF - A steel for a welded structure includes the following composition: by mass %, C at a C content [C] of 0.010 to 0.065%; Si at a Si content [Si] of 0.05 to 0.20%; Mn at a Mn content [Mn] of 1.52 to 2.70%; Ni at a Ni content [Ni] of 0.10% to 1.50%; Ti at a Ti content [Ti] of 0.005 to 0.015%; 0 at an O content [O] of 0.0010 to 0.0045%; N at a N content [N] of 0.002 to 0.006%; Mg at a Mg content [Mg] of 0.0003 to 0.003%; Ca at a Ca content [Ca] of 0.0003 to 0.003%; and the balance composed of Fe and unavoidable impurities. A steel component parameter P | 02-02-2012 |
20120031532 | Steel plate for line pipe excellent in strength and ductility and method of production of same - The present invention provides steel plate for line pipe excellent in strength and ductility and a method of production of the same. The steel plate has a steel composition containing, by mass %, | 02-09-2012 |
20120249459 | TOUCH PANEL DEVICE AND ELECTRONIC DEVICE HAVING THE SAME - A touch panel device, includes a transparent protective substrate disposed on a front side of the touch panel, the protective substrate being configured by joining a first glass substrate residing on a front side and a second glass substrate residing on a touch panel side, wherein either one of the first and second glass substrates is configured to have one or more stepped portions formed either on a rear surface of the first glass substrate or a front surface of the second glass substrate, the rear surface of the first glass substrate and the front surface of the second glass substrate facing one another; and one or more piezo vibration elements each disposed within one of the stepped portions so as to be acoustically coupled with the first glass substrate, wherein each of said one or more stepped portions is configured thicker than the corresponding piezo vibration element. | 10-04-2012 |
20130293226 | ELECTRIC CURRENT SENSOR - Disclosed is an electric current sensor, including a conducting wire, a core having a hole portion mating with the conducting wire and a gap communicating with the hole portion, and a magnetic sensor having a magnetic flux detection part arranged in the gap. | 11-07-2013 |
20140065008 | STEEL FOR WELDED STRUCTURE AND PRODUCING METHOD THEREOF - A steel for a welded structure includes the following composition: by mass %, C at a C content [C] of 0.015 to 0.045%; Si at a Si content [Si] of 0.05 to 0.20%; Mn at a Mn content [Mn] of 1.5 to 2.0%; Ni at a Ni content [Ni] of 0.10 to 1.50%; Ti at a Ti content [Ti] of 0.005 to 0.015%; O at an O content [O] of 0.0015 to 0.0035%; and N at a N content [N] of 0.002 to 0.006%, and a balance composed of Fe and unavoidable impurities. In the steel for a welded structure, the P content [P] is limited to 0.008% or less, the S content [S] is limited to 0.005% or less, the Al content [Al] is limited to 0.004% or less, the Nb content [Nb] is limited to 0.005% or less, the Cu content [Cu] is limited to 0.24% or less, the V content [V] is limited to 0.020% or less, and a steel composition parameter P | 03-06-2014 |
20140328716 | STEEL FOR WELDING - A steel for welding includes steel components in which P | 11-06-2014 |
Yoshiyuki Watanabe, Kanagawa JP
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20100129276 | GAS MIXING DEVICE AND SYNTHESIS GAS PRODUCING DEVICE - To provide a gas mixing device capable of safely mixing flammable gas containing, for example, methane or the like and combustion supporting gas such as oxygen-containing gas, and a synthesis gas producing device using this gas mixing device. | 05-27-2010 |
20100207069 | CATALYST FOR CATALYTIC PARTIAL OXIDATION OF HYDROCARBON AND PROCESS FOR PRODUCING SYNTHESIS GAS - A catalyst for catalytic partial oxidation of hydrocarbon, having high thermal shock resistance, and a process for producing a synthesis gas using the catalyst are provided. A catalyst for catalytic partial oxidation of hydrocarbon is used in producing a synthesis gas containing carbon monoxide and hydrogen by adding oxygen and steam to a raw material hydrocarbon, thereby subjecting the raw material hydrocarbon to catalytic partial oxidation, and comprises a carrier comprising an inorganic oxide and an active metal supported thereon. In the catalyst, the total of volume of pores having a pore diameter in a first range of from 0.1 μm to less than 1.0 μm is 32% or more of the whole pore volume, and the total of volume of pores having a pore diameter in a second range of from 1.0 μm to 10 μm or less is 14% or more of the whole pore volume. | 08-19-2010 |
20140325819 | METHOD OF PRODUCING A GAS MIXING DEVICE - A gas mixing device capable of safely mixing flammable gas containing, for example, methane or the like and combustion supporting gas such as oxygen-containing gas, and a synthesis gas producing device using this gas mixing device. Flammable gas containing methane or the like and combustion supporting gas such as oxygen-containing gas are supplied into a mixing vessel via a first gas supplying section and a second gas supplying section respectively, and these gases are mixed within a combustion range in the vessel to be discharged via a discharge section. In the mixing vessel, packings for forming a large number of narrow gas flow passages in the vessel are packed so that velocity of the mixed gas flowing in the vessel becomes higher than burning velocity of the flammable gas and the combustion supporting gas. | 11-06-2014 |
Yoshiyuki Watanabe, Yokohama-Shi JP
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20100068702 | Method for Detecting Disease-Related Marker Using Gastric Mucosal Lavage Fluid - The invention relates to a sample containing a gastric mucosa lavage fluid collected from a subject who has received a gastric mucus removal treatment and a method for detecting a disease-related marker using the same. By using the sample of the invention, the disease-related marker can be detected conveniently, less invasively, highly sensitively and highly accurately. | 03-18-2010 |
20100200812 | PRODUCTION METHOD FOR RAW GAS FOR AMMONIA SYNTHESIS AND PRODUCTION APPARATUS THEREFOR - There is provided a method for producing a raw gas for ammonia synthesis in which light hydrocarbons from a tube | 08-12-2010 |
Yoshiyuki Watanabe, Wakayama-Shi JP
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20100193735 | SPRAY-TYPE BLEACHING AGENT - The present invention is a spray mold remover, prepared by filling a bleaching composition in a container having a spraying means, the bleaching composition containing (a) an alkali metal hypochlorite, (b) a cationic surfactant and (c) a compound represented by the formula (1): | 08-05-2010 |
Yoshiyuki Watanabe, Kimitsu-Shi JP
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20090025839 | HIGH TENSILE STRENGTH, REFRACTORY STEEL HAVING EXCELLENT WELDABILITY AND GAS CUTTABILITY AND METHOD FOR PRODUCING SAME - Accordingly to an exemplary embodiment of the present invention, a high tensile strength, refractory steel can be provided which comprises, in mass %, approximately C: 0.04 to 0.14%, Si: 0.50% or less, Mn: 0.50 to 2.00%, P: 0.020% or less, S: 0.010% or less, Nb: 0.01 to 0.05%, Mo: 0.30% or more and less than 0.70%, Al: 0.060% or less, N: 0.0010 to 0.0060%, and the balance consisting of iron and unavoidable impurities. For example, a weld crack sensitive composition P | 01-29-2009 |
Yoshiyuki Watanabe, Gunma JP
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20110285249 | PIEZOLELECTRIC SOUND-GENERATING DEVICE - Provided is a piezoelectric sound generating device capable of obtaining a stable connection state of lead-out conductors constituted of a conductive resin layer. A piezoelectric sound generating device | 11-24-2011 |
20130271418 | PIEZOELECTRIC OSCILLATION DEVICE AND TOUCH PANEL DEVICE - In a piezoelectric oscillation device in which a support substrate is oscillated using a bimorph-type piezoelectric oscillation element, the click sensation when the support substrate is operated is improved, and shock resistance of a control panel is improved. Provided is a piezoelectric oscillation device in which wiring is not easily broken. On the rear side of a touch panel ( | 10-17-2013 |
Yoshiyuki Watanabe, Yamaguchi JP
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20120071672 | PROCESS FOR PREPARING AROMATIC ALDEHYDE COMPOUND - An object of the present invention is to provide an industrially advantageous process for preparing a benzaldehyde compound from a benzyl alcohol compound with high yield. | 03-22-2012 |
Yoshiyuki Watanabe, Iruma-Shi JP
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20120228636 | SCHOTTKY BARRIER DIODE - A third insulating layer is formed in a periphery region of a substrate over a first surface (main surface) of the substrate so as to straddle a second semiconductor layer closest to a guard ring layer and a second semiconductor layer closest to the second semiconductor layer. In other words, the third insulating layer is formed to cover a portion of the first semiconductor layer, which is exposed to the first surface (main surface) of the substrate and which is between the second semiconductor layers. Thereby, the third insulating layer electrically insulates the metal layer from the portion of the first semiconductor layer, which is exposed to the first surface (main surface) of the substrate and which is between the second semiconductor layers. | 09-13-2012 |
Yoshiyuki Watanabe, Yamagata JP
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20130043467 | THIN FILM DEVICE AND MANUFACTURING METHOD THEREOF - With a TFT using an oxide semiconductor film, there is such an issue that oxygen deficit is generated in a surface region of the oxide semiconductor film after performing plasma etching of a source/drain electrode, thereby increasing the off-current. Provided is a TFT which includes: a gate electrode on an insulating substrate; a gate insulating film on the gate electrode; an oxide semiconductor film containing indium on the gate insulating film; and a source/drain electrode on the oxide semiconductor film. Further, the peak position derived from an indium 3d orbital in the XPS spectrum of a surface layer in a part of the oxide semiconductor film where the source/drain electrode is not superimposed is shifted towards a high energy side than the peak position derived from the indium 3d orbital in the XPS spectrum of an oxide semiconductor region existing in a lower part of the surface layer. | 02-21-2013 |
20150279698 | THIN FILM DEVICE AND MANUFACTURING METHOD THEREOF - With a TFT using an oxide semiconductor film, there is such an issue that oxygen deficit is generated in a surface region of the oxide semiconductor film after performing plasma etching of a source/drain electrode, thereby increasing the off-current. Provided is a TFT which includes: a gate electrode on an insulating substrate; a gate insulating film on the gate electrode; an oxide semiconductor film containing indium on the gate insulating film; and a source/drain electrode on the oxide semiconductor film. Further, the peak position derived from an indium 3d orbital in the XPS spectrum of a surface layer in a part of the oxide semiconductor film where the source/drain electrode is not superimposed is shifted towards a high energy side than the peak position derived from the indium 3d orbital in the XPS spectrum of an oxide semiconductor region existing in a lower part of the surface layer. | 10-01-2015 |
Yoshiyuki Watanabe, Ube-Shi JP
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20140066571 | POLYIMIDE PRECURSOR AND POLYIMIDE - A polyimide precursor comprising a repeating unit represented by the following chemical formula (1): | 03-06-2014 |
20150158980 | POLYIMIDE PRECURSOR AND POLYIMIDE - A polyimide precursor including at least one repeating unit represented by the following chemical formula (1): | 06-11-2015 |
20150284513 | POLYIMIDE PRECURSOR, POLYIMIDE, VARNISH, POLYIMIDE FILM, AND SUBSTRATE - A polyimide comprising a repeating unit represented by the following chemical formula | 10-08-2015 |
20150307662 | POLYIMIDE PRECURSOR, POLYIMIDE, POLYIMIDE FILM, VARNISH, AND SUBSTRATE - A polyimide precursor comprising at least one repeating unit represented by the following chemical formula (5): | 10-29-2015 |
20150361222 | POLYIMIDE PRECURSOR, POLYIMIDE, VARNISH, POLYIMIDE FILM, AND SUBSTRATE - A polyimide precursor comprising a repeating unit represented by the following chemical formula (1): | 12-17-2015 |
20160032056 | POLYIMIDE PRECURSOR AND POLYIMIDE - The present invention relates to a polyimide precursor comprising a repeating unit represented by the following chemical formula (1): | 02-04-2016 |
Yoshiyuki Watanabe, Takasaki-Shi JP
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20140319968 | PIEZOELECTRIC SOUND-GENERATING BODY AND ELECTRONIC DEVICE USING THE SAME - A piezoelectric drive element includes piezoelectric layers, electrode layers between the piezoelectric layers, and electrode layers as the surfaces of the laminated layers. The piezoelectric layers are arranged on the upper side and on the lower side with reference to the center in the thickness direction, and are polarized in opposite directions. The thicknesses of piezoelectric layers at the center which have the least displacement are the thickest. The thicknesses of the piezoelectric layers above and under the thickest piezoelectric layers decrease gradually in an outward direction. A piezoelectric sound-generating body is constructed by affixing the piezoelectric driving element to a support plate and supporting the piezoelectric driving element with a frame. | 10-30-2014 |
20160072042 | PIEZOELECTRIC SENSOR FOR BICYCLE COMPONENT - A piezoelectric material contains ferroelectric particles and an adhesive resin. The ratio of the ferroelectric particles relative to the total mass of the ferroelectric particles and the adhesive resin is 40 mass % or greater and 98 mass % or less. | 03-10-2016 |
Yoshiyuki Watanabe, Fukuoka JP
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20150281832 | SOUND PROCESSING APPARATUS, SOUND PROCESSING SYSTEM AND SOUND PROCESSING METHOD - A sound processing apparatus includes a data obtaining unit, configured to obtain sound data collected by a sound collection unit including a plurality of microphones and image data captured by an imaging unit, a designation unit, configured to designate a plurality of directions defined relative to the sound collection unit, wherein the plurality of directions correspond to designation parts on an image displayed based on the image data, and a directivity processing unit, configured to emphasize sound components in the sound data in the plurality of directions designated by the designation unit | 10-01-2015 |
20150312662 | SOUND PROCESSING APPARATUS, SOUND PROCESSING SYSTEM AND SOUND PROCESSING METHOD - A sound processing apparatus includes a processor to obtain sound data and image data, wherein the sound data is collected from a sound source in a given area by a sound collection unit including a plurality of microphones and the image data is captured by an imaging unit which captures an image at least partially in the given area, to designate a direction defined relative to the sound collection unit, wherein the designated direction corresponds to a designation part on an image displayed based on the image data, to designate an arbitrary range in the given area, wherein the designated arbitrary range corresponds to a designation part on the image displayed based on the image data, and to emphasize a sound component in the sound data in the direction designated by the first designation unit within the arbitrary range designated by the second designation unit. | 10-29-2015 |
Yoshiyuki Watanabe, Hanno-Shi, Saitama JP
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20160056260 | METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes forming a thermal oxide film on one surface of an SiC substrate by thermal oxidation at a temperature of 1150° C. or above in a gas atmosphere including nitrogen and oxygen, and introducing highly-concentrated nitrogen to one surface of the SiC substrate while forming the thermal oxide film; forming a highly-concentrated n-type SiC layer on one surface of the SiC substrate such that the thermal oxide film is removed from one surface of the SiC substrate by etching and, thereafter, one surface of the SiC substrate is exposed to radicals so that Si—N bonded bodies and C—N bonded bodies on one surface of the SiC substrate are removed while leaving nitrogen introduced into a lattice of SiC out of highly-concentrated nitrogen introduced into one surface of the SiC substrate; and forming an ohmic electrode layer on one surface of the SiC substrate. | 02-25-2016 |