Patent application number | Description | Published |
20080230834 | Semiconductor apparatus having lateral type MIS transistor - A semiconductor apparatus comprises: a semiconductor substrate; and a lateral type MIS transistor disposed on a surface part of the semiconductor substrate. The lateral type MIS transistor includes: a line coupled with a gate of the lateral type MIS transistor; a polycrystalline silicon resistor that is provided in the line, and that has a conductivity type opposite to a drain of the lateral type MIS transistor; and an insulating layer through which a drain voltage of the lateral type MIS transistor is applied to the polycrystalline silicon resistor. | 09-25-2008 |
20100102857 | Switching circuit and driving circuit for transistor - A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a condition state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector. | 04-29-2010 |
20110210766 | DRIVING CIRCUIT FOR TRANSISTOR - A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector. | 09-01-2011 |
20120025874 | SEMICONDUCTOR DEVICE HAVING SWITCHING ELEMENT AND FREE WHEEL DIODE AND METHOD FOR CONTROLLING THE SAME - A semiconductor device includes a switching element having: a drift layer; a base region; an element-side first impurity region in the base region; an element-side gate electrode sandwiched between the first impurity region and the drift layer; a second impurity region contacting the drift layer; an element-side first electrode coupled with the element-side first impurity region and the base region; and an element-side second electrode coupled with the second impurity region, and a FWD having: a first conductive layer; a second conductive layer; a diode-side first electrode coupled to the second conductive layer; a diode-side second electrode coupled to the first conductive layer; a diode-side first impurity region in the second conductive layer; and a diode-side gate electrode in the second conductive layer sandwiched between first impurity region and the first conductive layer and having a first gate electrode as an excess carrier injection suppression gate. | 02-02-2012 |
20120182051 | DRIVING CIRCUIT FOR TRANSISTOR - A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector. | 07-19-2012 |
20150041850 | SEMICONDUCTOR DEVICE HAVING SWITCHING ELEMENT AND FREE WHEEL DIODE AND METHOD FOR CONTROLLING THE SAME - A semiconductor device includes a switching element having: a drift layer; a base region; an element-side first impurity region in the base region; an element-side gate electrode sandwiched between the first impurity region and the drift layer; a second impurity region contacting the drift layer; an element-side first electrode coupled with the element-side first impurity region and the base region; and an element-side second electrode coupled with the second impurity region, and a FWD having: a first conductive layer; a second conductive layer; a diode-side first electrode coupled to the second conductive layer; a diode-side second electrode coupled to the first conductive layer; a diode-side first impurity region in the second conductive layer; and a diode-side gate electrode in the second conductive layer sandwiched between first impurity region and the first conductive layer and having a first gate electrode as an excess carrier injection suppression gate. | 02-12-2015 |
Patent application number | Description | Published |
20090088888 | COMPONENT MOUNTING METHOD - The component mounter ( | 04-02-2009 |
20130129467 | ELECTRONIC COMPONENT MOUNTING METHOD - In an electronic component mounting method, electronic components are picked up from a component supply unit in which two tray supply mechanisms are arranged, and mounted on substrates. In the method, both of the tray supply mechanisms are allowed to hold trays storing therein the electronic components to be mounted on the substrates. If shortage of the components occurs in one tray supply mechanism during a component mounting process, a target for picking up the electronic components is switched to the other tray supply mechanism. If use stop setting indicating that the pickup of the electronic components is no longer conducted is enabled in one tray supply mechanism, the controller prohibits an access of a mounting head to the one tray supply mechanism, and permits an operation access of an operator to a tray housing unit of the one tray supply mechanism. | 05-23-2013 |
20130129468 | METHOD OF MOUNTING ELECTRONIC PARTS - In an electronic component mounting method, electronic components are picked up from a component supply unit in which first and second tray supply mechanisms are arranged, and mounted on substrates. In the method, a first substrate and a second substrate different in type from the first substrate are transported by first and second substrate transport lanes, respectively, and a first component to be mounted on the first substrate and a second component to be mounted on the second substrate are supplied by the first and second tray supply mechanisms, respectively. If use stop setting indicating that the pickup of the electronic components is no longer conducted is enabled in one tray supply mechanism, the controller prohibits an access of a mounting head to the one tray supply mechanism, and permits an operation access of an operator to a tray housing unit of the one tray supply mechanism. | 05-23-2013 |