Patent application number | Description | Published |
20090087721 | SURFACE-MODIFIED CARBON MATERIAL AND METHOD FOR PRODUCING THE SAME - Disclosed is a surface-modified carbon material obtained by subjecting a carbon material to react with a benzyne. The surface-modified carbon material has high heat stability. | 04-02-2009 |
20090095962 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING DISPLAY APPARATUS, APPARATUS OF MANUFACTURING SEMICONDUCTOR DEVICE, AND DISPLAY APPARATUS - A method of manufacturing a semiconductor device includes the steps of: modifying a semiconductor film by applying a laser beam; and forming a semiconductor device on the modified semiconductor film. In the step of modifying the semiconductor film, the laser beam and the substrate are moved relative to each other in a first direction and a second direction which is opposite to the first direction, a change in an optical characteristic between an area irradiated with the laser beam and an area which is not irradiated with the laser beam in the substrate or an optical characteristic of the irradiated area is measured in each of the first and second directions, and irradiation power of the laser beam is modulated so that the difference between a measurement result in the first direction and a measurement result in the second direction lies in a predetermined range. | 04-16-2009 |
20100038646 | METHOD OF MANUFACTURING THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, AND DISPLAY UNIT - A thin film transistor having a crystalline silicon film that is formed over an insulating substrate with a gate electrode and a gate insulating film in between, and has a channel region in a region corresponding to the gate electrode; an insulating channel protective film that is selectively formed in a region corresponding to the channel region on the crystalline silicon film; an n+ silicon film having a source region and a drain region that sandwich a region corresponding to the channel region on the channel protective film and the crystalline silicon film; and a metal film having a source electrode and a drain electrode that respectively correspond to the source region and the drain region. | 02-18-2010 |
20100159619 | METHOD FOR CRYSTALLIZING THIN FILM, METHOD FOR MANUFACTURING THIN FILM SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING ELECTRONIC APPARATUS, AND METHOD FOR MANUFACTURING DISPLAY DEVICE - A gate insulating film ( | 06-24-2010 |
20100197050 | METHOD OF FORMING SEMICONDUCTOR THIN FILM AND INSPECTION DEVICE OF SEMICONDUCTOR THIN FILM - A method of forming a semiconductor thin film includes the steps of: forming an amorphous semiconductor thin film on a substrate; partially forming a crystalline semiconductor thin film for each element region by irradiating laser light to the amorphous semiconductor thin film to selectively perform a heating treatment on the amorphous semiconductor thin film, and crystallizing an amorphous semiconductor thin film corresponding to an irradiation region; and inspecting crystallinity of the crystalline semiconductor thin film. The inspection step includes the steps of obtaining an optical step based on an optical phase difference between a crystallized region and an uncrystallized region by irradiating light to the crystalline semiconductor thin film and the amorphous semiconductor thin film, and evaluating one or both of sorting of the crystalline semiconductor thin film and control of crystallinity of the crystalline semiconductor thin film, based on the obtained optical step. | 08-05-2010 |
20100239962 | TWO-PHOTON ABSORBING OPTICAL RECORDING MATERIAL AND TWO-PHOTON ABSORBING OPTICAL RECORDING AND REPRODUCING METHOD - A two-photon absorbing optical recording material comprising at least one two-photon absorbing compound and a recording component is provided. Recording is made on it by utilizing the two-photon absorption of the two-photon absorbing compound in the material, and then the material is irradiated with light to thereby detect the difference in the reflectance between the recorded area and the unrecorded area thereof, and the recorded information is thereby reproduced from the material, and also provided are a photosensitive polymer composition and a photon-mode recording method for the material. | 09-23-2010 |
20110244577 | OXYGEN PERMEABILITY MEASURING APPARATUS AND METHOD, AND DEFECT INSPECTION APPARATUS AND METHOD - An oxygen permeability measuring apparatus for measuring an oxygen permeation rate of oxygen barrier film in a dark room is provided. A container is charged with inert gas, and sealed hermetically by use of the oxygen barrier film at least partially. A chemiluminescent compound is contained in the container, for emitting light by oxidation with the oxygen. A photon detector detects photons emitted by the chemiluminescent compound so as to determine an amount of the oxygen permeated through the oxygen barrier film. Preferably, the container includes a container body. An opening is formed in the container body, and closed hermetically by the oxygen barrier film attached thereto. The photon detector is disposed inside or outside the container. The oxygen permeation rate is equal to or less than 10 | 10-06-2011 |
20120196395 | METHOD FOR CRYSTALLIZING THIN FILM, METHOD FOR MANUFACTURING THIN FILM SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING ELECTRONIC APPARATUS, AND METHOD FOR MANUFACTURING DISPLAY DEVICE - A method for crystallizing a thin film A gate insulating film formed on a substrate so as to cover a gate electrode. A light absorption layer is formed thereon through a buffer layer. Energy lines Lh are applied to the light absorption layer from a continuous-wave laser such as a semiconductor laser. This anneals only a surface side of the light absorption layer Lh and produces a crystalline silicon film obtained by crystallizing the amorphous silicon film using heat generated by thermal conversion of the energy lines Lh at the light absorption layer and heat of the annealing reaction. | 08-02-2012 |
20120205660 | METHOD OF MANUFACTURING THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, AND DISPLAY UNIT - A thin film transistor having a crystalline silicon film that is formed over an insulating substrate with a gate electrode and a gate insulating film in between, and has a channel region in a region corresponding to the gate electrode; an insulating channel protective film that is selectively formed in a region corresponding to the channel region on the crystalline silicon film; an n+ silicon film having a source region and a drain region that sandwich a region corresponding to the channel region on the channel protective film and the crystalline silicon film; and a metal film having a source electrode and a drain electrode that respectively correspond to the source region and the drain region. | 08-16-2012 |
20120238774 | CHARGE TRANSPORT FILM, METHOD FOR PRODUCING THE SAME, AND LIGHT-EMITTING ELEMENT AND PHOTOELECTRIC CONVERSION ELEMENT USING THE SAME - The present invention provides a charge transport film which is prepared through subjecting a coating film including at least one charge transporting agent to an atmospheric pressure plasma treatment, wherein electron transfer between the charge transport film and a substance that contacts with the charge transport film is promoted, and deterioration in performance due to diffusion and mixing or crystallization of low molecular weight components, such as a charge transporting agent, incorporated in a cured film is suppressed also in the case of film formation by a wet method, and which exhibits excellent charge transportability and stability over time; a production method with good productivity; and a light-emitting element and photoelectric conversion element equipped with the charge transport film, the atmospheric pressure plasma treatment being preferably a treatment that applies plasma, which is generated using a plasma generating apparatus and conveyed using an inert gas, to the coating film. | 09-20-2012 |
20120256182 | METHOD OF MANUFACTURING THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, AND DISPLAY UNIT - A thin film transistor having a crystalline silicon film that is formed by irradiating an amorphous silicon film with a light beam through a photothermal conversion layer and an insulating film to provide the amorphous silicon film with heat treatment. | 10-11-2012 |