Patent application number | Description | Published |
20090269697 | POLYORGANOSILOXANE, RESIN COMPOSITION, AND PATTERNING PROCESS - A polyorganosiloxane compound is modified such that some silicon-bonded hydroxyl groups are substituted with acid labile groups and/or intermolecular or intramolecular crosslinks form with a crosslinking group having a C—O—C linkage. Cured films of a composition comprising the polyorganosiloxane are useful as interlayer dielectric films on TFT substrates. | 10-29-2009 |
20110305990 | METHOD FOR MANUFACTURING MICRO-STRUCTURE - A micro-structure is manufactured by patterning a sacrificial film, forming an inorganic material film on the pattern, providing the inorganic material film with an aperture, and etching away the sacrificial film pattern through the aperture to define a space having the contour of the pattern. The patterning stage includes the steps of (A) forming a sacrificial film using a composition comprising a cresol novolac resin and a crosslinker, (B) exposing patternwise the film to first high-energy radiation, (C) developing, and (D) exposing the sacrificial film pattern to second high-energy radiation and heat treating for thereby forming crosslinks within the cresol novolac resin. | 12-15-2011 |
20120129106 | POSITIVE LIFT-OFF RESIST COMPOSITION AND PATTERNING PROCESS - A positive lift-off resist composition is provided comprising (A) an alkali-soluble novolac resin, (B) a quinonediazidosulfonate photosensitive agent, (C) an alkali-soluble cellulose resin, and (D) an aromatic hydroxy compound having a formula weight of 180-800. The composition has shelf stability, high sensitivity, and a film retention after development of at least 95% and is used to form a lift-off resist pattern of fully undercut profile. | 05-24-2012 |
20120292286 | METHOD FOR MANUFACTURING MICRO-STRUCTURE AND OPTICALLY PATTERNABLE SACRIFICIAL FILM-FORMING COMPOSITION - A micro-structure is manufactured by patterning a sacrificial film, forming an inorganic material film on the pattern, and etching away the sacrificial film pattern through an aperture to define a space having the contour of the pattern. The patterning stage includes the steps of (A) coating a substrate with a composition comprising a cresol novolac resin, a crosslinker, and a photoacid generator, (B) heating to form a sacrificial film, (C) patternwise exposure, (D) development to form a sacrificial film pattern, and (E) forming crosslinks within the cresol novolac resin. | 11-22-2012 |
20130101937 | MODIFIED NOVOLAK PHENOLIC RESIN, MAKING METHOD, AND RESIST COMPOSITION - A modified novolak phenolic resin is obtained by reacting a novolak phenolic resin containing at least 50 wt % of p-cresol with a crosslinker. This method increases the molecular weight of the existing novolak phenolic resin containing at least 50 wt % of p-cresol to such a level that the resulting modified novolak phenolic resin has heat resistance enough for the photoresist application. | 04-25-2013 |
20140072914 | METHODS FOR MANUFACTURING RESIN STRUCTURE AND MICRO-STRUCTURE - A resin structure for the formation of a micro-structure is manufactured by (A) applying a composition comprising a polymer, a photoacid generator, and an organic solvent onto a substrate, (B) heating the composition to form a sacrificial film, (C) exposing imagewise the film to first high-energy radiation, (D) developing the film in an alkaline developer to form a sacrificial film pattern, (E) exposing the sacrificial film pattern to UV as second high-energy radiation, and (F) heating the substrate at 100-250° C. The exposure dose of first high-energy radiation in step (C) is up to 250 mJ/cm | 03-13-2014 |
20140220497 | METHODS FOR MANUFACTURING RESIN STRUCTURE AND MICRO-STRUCTURE - A resin structure for the formation of a micro-structure is manufactured by (A) applying a composition comprising a polymer, a photoacid generator, an epoxy compound, and an organic solvent onto a substrate, (B) heating the composition to form a sacrificial film, (C) exposing imagewise the film to first high-energy radiation, (D) developing the film in an alkaline developer to form a sacrificial film pattern, (E) exposing the sacrificial film pattern to UV as second high-energy radiation, and (F) heating the substrate at 80-250° C. The exposure dose of first high-energy radiation in step (C) is up to 250 mJ/cm | 08-07-2014 |
20140296380 | METHOD FOR MANUFACTURING MICRO-STRUCTURE - A micro-structure is manufactured by patterning a sacrificial film, forming an inorganic material film on the pattern, providing the inorganic material film with an aperture, and etching away the sacrificial film pattern through the aperture to define a space having the contour of the pattern. The patterning stage includes the steps of (A) forming a sacrificial film using a composition comprising a cresol novolac resin and a crosslinker, (B) exposing patternwise the film to first high-energy radiation, (C) developing, and (D) exposing the sacrificial film pattern to second high-energy radiation and heat treating for thereby forming crosslinks within the cresol novolac resin. | 10-02-2014 |
20140356790 | METHOD FOR MANUFACTURING MICRO-STRUCTURE AND OPTICALLY PATTERNABLE SACRIFICIAL FILM-FORMING COMPOSITION - A micro-structure is manufactured by patterning a sacrificial film, forming an inorganic material film on the pattern, and etching away the sacrificial film pattern through an aperture to define a space having the contour of the pattern. The patterning stage includes the steps of (A) coating a substrate with a composition comprising a cresol novolac resin, a crosslinker, and a photoacid generator, (B) heating to form a sacrificial film, (C) patternwise exposure, (D) development to form a sacrificial film pattern, and (E) forming crosslinks within the cresol novolac resin. | 12-04-2014 |
20150057416 | ORGANOSILOXANE-MODIFIED NOVOLAK RESIN AND MAKING METHOD - An organosiloxane-modified novolak resin comprising structural units having formula (1) wherein R | 02-26-2015 |
20150087792 | MODIFIED NOVOLAK PHENOLIC RESIN, MAKING METHOD, AND RESIST COMPOSITION - A modified novolak phenolic resin is obtained by reacting a novolak phenolic resin containing at least 50 wt % of p-cresol with a crosslinker. This method increases the molecular weight of the existing novolak phenolic resin containing at least 50 wt % of p-cresol to such a level that the resulting modified novolak phenolic resin has heat resistance enough for the photoresist application. | 03-26-2015 |