Patent application number | Description | Published |
20090068827 | Method for fabricating semiconductor device - A semiconductor device provided with: a channel region formed in a surface of a semiconductor substrate in a predetermined depth range, a trench being formed in the surface as penetrating the channel region in a depthwise direction; a gate insulating film formed on an inside wall of the trench, the gate insulating film being in contact with the channel region; and a gate electrode including: a polysilicon layer opposing the channel region with the gate insulating film interposed therebetween, the polysilicon layer being embedded in an internal space of the trench at least in the predetermined depth range; and a low-resistance layer essentially formed from a metal element and disposed in the trench above the polysilicon layer that opposes the channel region. | 03-12-2009 |
20090121293 | Semiconductor device and method for manufacturing same - The semiconductor device includes a semiconductor substrate, a plurality of source regions formed in a stripe shape on the semiconductor substrate, a plurality of gate electrodes formed in a stripe shape between a plurality of the stripe shaped source regions on the semiconductor substrate, an insulating film for covering the source regions and the gate electrodes, the insulating film including a contact hole for partly exposing the source regions in a part of a predetermined region with respect to a longitudinal direction of the source regions; and a source electrode formed on the insulating film and electrically connected to the source region via the contact hole. | 05-14-2009 |
20100025759 | TRENCH TYPE SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR THE SAME - The trench type semiconductor device includes a gate insulating film placed on the bottom surface and the sidewall surface of the trench formed from the surface of a first base layer; a gate electrode placed on the gate insulating film and fills up into a trench; an interlayer insulating film covering the gate electrode; a second base layer placed on the surface of the first base layer, and is formed more shallowly than the bottom surface of the trench; a source layer placed on the surface of the second base layer; a source electrode connected to the second base layer in the bottom surface of a self-aligned contact trench formed in the second base layer by applying the interlayer insulating film as a mask, and is connected to the source layer in the sidewall surface; a drain layer placed at the back side of the first base layer; and a drain electrode placed at the drain layer, for achieving the minute structure by the self-alignment, reducing the on resistance, and improving the breakdown capability, and providing a fabrication method for the same. | 02-04-2010 |
20110096509 | HIGH EFFICIENCY MODULE | 04-28-2011 |
20120276728 | TRENCH TYPE SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR THE SAME - The trench type semiconductor device includes a gate insulating film placed on the bottom surface and the sidewall surface of the trench formed from the surface of a first base layer; a gate electrode placed on the gate insulating film and fills up into a trench; an interlayer insulating film covering the gate electrode; a second base layer placed on the surface of the first base layer, and is formed more shallowly than the bottom surface of the trench; a source layer placed on the surface of the second base layer; a source electrode connected to the second base layer in the bottom surface of a self-aligned contact trench formed in the second base layer by applying the interlayer insulating film as a mask, and is connected to the source layer in the sidewall surface; a drain layer placed at the back side of the first base layer; and a drain electrode placed at the drain layer, for achieving the minute structure by the self-alignment, reducing the on resistance, and improving the breakdown capability, and providing a fabrication method for the same. | 11-01-2012 |
20120326207 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD - A semiconductor device includes a first-conductivity-type semiconductor layer including an active region in which a transistor having impurity regions is formed and a marginal region surrounding the active region, a second-conductivity-type channel layer formed between the active region and the marginal region and forming a front surface of the semiconductor layer, at least one gate trench formed in the active region to extend from the front surface of the semiconductor layer through the channel layer, a gate insulation film formed on an inner surface of the gate trench, a gate electrode formed inside the gate insulation film in the gate trench, and at least one isolation trench arranged between the active region and the marginal region to surround the active region and extending from the front surface of the semiconductor layer through the channel layer, the isolation trench having a depth equal to that of the gate trench. | 12-27-2012 |
20130062690 | SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR SAME - A semiconductor device has a source region, channel region, and drain region disposed in order from the surface of the device in the thickness direction of a semiconductor substrate. The device includes a source metal embedded in a source contact groove penetrating the source region and reaching the channel region, a gate insulating film formed on the side wall of a gate trench that is formed to penetrate the source region and channel and reach the drain region, a polysilicon gate embedded in trench so that at least a region facing the channel region in the insulating film is covered with the gate and so that the entire gate is placed under a surface of the source region, and a gate metal that is embedded in a gate contact groove formed in the gate so as to reach the depth of the channel region and in contact with the gate. | 03-14-2013 |
20130163211 | HIGH EFFICIENCY MODULE | 06-27-2013 |
20130313638 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Provided is a semiconductor device that can be manufactured at low cost and that can reduce a reverse leak current, and a manufacturing method thereof. A semiconductor device has: a source region and a drain region having a body region therebetween; a source trench that reaches the body region, penetrating the source region; a body contact region formed at the bottom of the source trench; a source electrode embedded in the source trench; and a gate electrode that faces the body region. The semiconductor device also has: an n-type region for a diode; a diode trench formed reaching the n-type region for a diode; a p | 11-28-2013 |
20140061774 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR PACKAGE - A semiconductor device capable of ensuring a withstand voltage of a transistor and reducing a forward voltage of a Schottky barrier diode in a package with the transistor and the Schottky barrier diode formed on chip, and a semiconductor package formed by a resin package covering the semiconductor device are provided. The semiconductor device | 03-06-2014 |
20140295625 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A semiconductor device includes a first-conductivity-type semiconductor layer including an active region in which a transistor having impurity regions is formed and a marginal region surrounding the active region, a second-conductivity-type channel layer formed between the active region and the marginal region and forming a front surface of the semiconductor layer, at least one gate trench formed in the active region to extend from the front surface of the semiconductor layer through the channel layer, a gate insulation film formed on an inner surface of the gate trench, a gate electrode formed inside the gate insulation film in the gate trench, and at least one isolation trench arranged between the active region and the marginal region to surround the active region and extending from the front surface of the semiconductor layer through the channel layer, the isolation trench having a depth equal to that of the gate trench. | 10-02-2014 |
20150035006 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A semiconductor device includes a first-conductivity-type semiconductor layer including an active region in which a transistor having impurity regions is formed and a marginal region surrounding the active region, a second-conductivity-type channel layer formed between the active region and the marginal region and forming a front surface of the semiconductor layer, at least one gate trench formed in the active region to extend from the front surface of the semiconductor layer through the channel layer, a gate insulation film formed on an inner surface of the gate trench, a gate electrode formed inside the gate insulation film in the gate trench, and at least one isolation trench arranged between the active region and the marginal region to surround the active region and extending from the front surface of the semiconductor layer through the channel layer, the isolation trench having a depth equal to that of the gate trench. | 02-05-2015 |
20150084176 | HIGH EFFICIENCY MODULE | 03-26-2015 |
20150087122 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - Provided is a semiconductor device that can be manufactured at low cost and that can reduce a reverse leak current, and a manufacturing method thereof. A semiconductor device has: a source region and a drain region having a body region therebetween; a source trench that reaches the body region, penetrating the source region; a body contact region formed at the bottom of the source trench; a source electrode embedded in the source trench; and a gate electrode that faces the body region. The semiconductor device also has: an n-type region for a diode; a diode trench formed reaching the n-type region for a diode; a p | 03-26-2015 |
Patent application number | Description | Published |
20100074318 | EQUALIZER, EQUALIZATION METHOD, PROGRAM AND RECEIVING DEVICE - An equalizer includes: a replica generation means for generating a replica of a multipath component by applying an adaptive filter to a received signal; a removal means for generating a multipath-component removed signal from which the multipath component has been removed by subtracting the replica from the received signal; a correlation value calculation means for calculating a correlation value between the received signal and the replica; a power value calculation means for calculating a power value of the replica; a determination means for determining whether the replica is the replica of the multipath component based on the correlation value and the power value; and a selection means for outputting the multipath-component removed signal when it is determined that the replica is the replica of the multipath component, and outputting the received signal when it is determined that the replica is not the replica of the multipath component. | 03-25-2010 |
20100310013 | SIGNAL RECEIVING APPARATUS, METHOD, PROGRAM AND SYSTEM - A signal receiving apparatus includes: an acquisition section configured to acquire an Orthogonal Frequency Division Multiplexing signal resulting from combination of a plurality of signals transmitted by a plurality of signal transmitting apparatus by adoption of an Orthogonal Frequency Division Multiplexing method; and a demodulation section configured to carry out partial processing of processing to demodulate the Orthogonal Frequency Division Multiplexing signal acquired by the acquisition section by making use of either first pilot signals or second pilot signals where the first pilot signals are pilot signals extracted from the Orthogonal Frequency Division Multiplexing signal acquired by the acquisition section as signals having the same phase for all the signal transmitting apparatus, and the second pilot signals are pilot signals extracted from the Orthogonal Frequency Division Multiplexing signal acquired by the acquisition section as signals having different phases depending on the signal transmitting apparatus. | 12-09-2010 |
20110099453 | RECEIVING APPARATUS, RECEIVING METHOD, COMPUTER PROGRAM, AND RECEIVING SYSTEM - A receiving apparatus includes: a first decoding means for performing, every time frame data in which an inner code and an outer code are used as error correction codes is transmitted thereto, decoding processing employing the inner code and outputting decoded data; a storing means for storing the decoded data; a second decoding means for applying decoding processing employing the outer code to the decoded data; and a control means for controlling storage and output of the decoded data in and from the storing means to suspend, while the control means causes the storing means to output first decoded data as the decoded data of a decoding result of first frame data to the second decoding means, when the first decoding means starts output of second decoded data as the decoded data of a decoding result of second frame data following the first frame data, the output of the first decoded data to the second decoding means and cause the storing means to store the second decoded data and, when the storage of the second decoded data ends, cause the storing means to resume the output of the first decoded data to the second decoding means. | 04-28-2011 |
20110246863 | DATA PROCESSING APPARATUS AND METHOD, AND PROGRAM - The present invention relates to data processing apparatus and method, and a program which make it possible to scatter burst errors with respect to both codes of a product code. | 10-06-2011 |
20120099635 | RECEPTION APPARATUS, RECEPTION METHOD, AND PROGRAM - Disclosed herein is a reception apparatus including a calculation section and a storage section. The calculation section calculates correlation values between a data sequence included in a known signal and a received signal at a given point in time. The storage section has at least an area sufficient for storing the correlation values calculated for one frame using the received signal which is one frame long and to which the known signal is added. | 04-26-2012 |
20120099677 | SIGNAL RECEIVING APPARATUS, SIGNAL RECEIVING METHOD AND SIGNAL RECEIVING PROGRAM - A signal receiving apparatus includes: a processing unit configured to carry out Fourier transform on Fourier-transform data serving as a Fourier-transform object and carry out Fourier transform on inverse-Fourier-transform data serving as an inverse-Fourier-transform object; and a control unit configured to output pieces of data obtained as a result of the Fourier transform carried out on the Fourier-transform data in an order, in which the pieces of data have been obtained, in a process of outputting the pieces of data and output other pieces of data obtained as a result of the Fourier transform carried out on the inverse-Fourier transform data by rearranging the other pieces of data in a process of outputting the other pieces of data. | 04-26-2012 |
20120099681 | RECEPTION APPARATUS, RECEPTION METHOD, AND PROGRAM - A reception apparatus is disclosed which includes: a detection section configured to detect the presence or absence of spectrum inversion in data transmitted by a multi-carrier transmission system based on whether a known signal can be decoded using that part of the transmitted data which has been transmitted by carriers used for transmitting the known signal; and a correction section configured to correct the data transmitted by the multi-carrier transmission system if the presence of spectrum inversion is detected. | 04-26-2012 |
20120102082 | RECEPTION APPARATUS, RECEPTION METHOD AND PROGRAM - Disclosed herein is a reception apparatus, including a first equalization section, a second equalization section, and an arithmetic operation section. The first equalization section is adapted to carry out equalization of a signal which represents data transmitted by a transmission method which uses a single carrier. The second equalization section is adapted to carry out equalization of a signal which represents data transmitted by a transmission method which uses multi carriers. The arithmetic operation section is adapted to carry out arithmetic operation for determining information to be used for the equalization by the first equalization section and arithmetic operation for determining information to be used for the equalization by the second equalization section. | 04-26-2012 |
20120106619 | SIGNAL PROCESSING APPARATUS, SIGNAL PROCESSING METHOD AND PROGRAM - A signal processing apparatus includes a signal processing unit configured to carry out signal processing on a single-carrier signal and a multi-carrier signal by making use of a plurality of common filters shared by the single-carrier signal and the multi-carrier signal. | 05-03-2012 |
20130321707 | TRANSMITTER APPARATUS, INFORMATION PROCESSING METHOD, PROGRAM, AND TRANSMITTER SYSTEM - The present technology relates to a transmitter apparatus, an information processing method, a program, and a transmitter system capable of easily transmitting a wideband signal. | 12-05-2013 |
20130332980 | RECEIVING DEVICE, RECEIVING METHOD, AND PROGRAM - This technique relates to a receiving device, a receiving method, and a program that can demodulate transmitted signals with high accuracy. A receiving device of this disclosure includes: an amplifying unit that amplifies a received signal; an adjusting unit that adjusts gain of the amplifying unit in accordance with power of the signal; a demodulating unit that demodulates the amplified signal; and a detecting unit that detects an interval from the signal, information having the same content continuously appearing in the interval. The adjusting unit restricts the process of adjusting the gain of the amplifying unit in accordance with a result of the detection of the interval. This disclosure can be applied to receiving devices that receive broadcast signals compliant with DVB-C2 via a CATV network. | 12-12-2013 |
20140009684 | RECEIVING DEVICE, RECEIVING METHOD, PROGRAM, AND RECEIVING SYSTEM - This technique relates to a receiving device, a receiving method, a program, and a receiving system that are designed to reduce circuit size. A receiving device of one aspect of this technique includes: a de-mapping unit that receives a symbol signal generated by performing mapping on a first branch signal and a second branch signal indicating information about the same transmission target, and performs de-mapping on the symbol signal by a hard decision; a selecting unit that selects, in accordance with a reception state, one signal from the first branch signal and the second branch signal obtained through the de-mapping; and a decoding unit that decodes the information about the transmission target based on the one signal. This technique can be applied to receivers that receive OFDM signals compliant with DVB-C2. | 01-09-2014 |
20140016728 | RECEPTION APPARATUS, RECEPTION METHOD, PROGRAM, AND RECEPTION SYSTEM - The present technique relates to a reception apparatus, a reception method, a program, and a reception system capable of starting decoding of data in a short time. A reception apparatus according to an aspect of the present technique includes a demodulation unit configured to demodulate a modulated signal used to transmit transmission control information about data and the data to be transmitted, a first decoding unit configured to decode the transmission control information obtained by demodulation performed with the demodulation unit, a storage unit configured to store the data obtained by demodulation performed with the demodulation unit, and a second decoding unit configured to decode the data stored in the storage unit on the basis of the transmission control information decoded by the first decoding unit. The present technique can be applied to a receiver receiving an OFDM signal of DVB-C2. | 01-16-2014 |
20140029661 | RECEPTION DEVICE AND RECEPTION METHOD - The present technique relates to a reception device and a reception method which can improve equalization performance. An equalization processing unit has a time domain equalization unit which equalizes a received signal in a time domain and a frequency domain equalization unit which is provided in parallel to the time domain equalization unit and which equalizes the received signal in a frequency domain, and performs control of switching between the time domain equalization unit and the frequency domain equalization unit. The present technique can be applied to, for example, equalize a signal of data transmitted by way of single carrier transmission or data transmitted by way of multicarrier transmission. | 01-30-2014 |