Patent application number | Description | Published |
20080203574 | INSULATING FILM MATERIAL, MULTILAYER INTERCONNECTION STRUCTURE, METHOD FOR MANUFACTURING SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - To provide an insulating film material that can be advantageously used for forming an insulating film having a low dielectric constant and excellent resistance to damage, such as etching resistance and resistance to liquid reagents, a multilayer interconnection structure in which a parasitic capacitance between the interconnections can be reduced, efficient methods for manufacturing the multilayer interconnection structure, and an efficient method for manufacturing a semiconductor device with a high speed and reliability. The insulating film material contains at least a silicon compound having a steric structure represented by Structural Formula (1) below. | 08-28-2008 |
20080206999 | METHOD FOR WET ETCHING WHILE FORMING INTERCONNECT TRENCH IN INSULATING FILM - A wet etching method that includes forming an insulating film on a substrate, and irradiating laser light to the insulating film during wet etching of the insulating film using an etching solution. | 08-28-2008 |
20090038833 | SILICON COMPOUND, ULTRAVIOLET ABSORBENT, METHOD FOR MANUFACTURING MULTILAYER WIRING DEVICE AND MULTILAYER WIRING DEVICE - A layer of a porous insulating film precursor is formed on or over a substrate, a layer of a specific silicon compound is then formed, this silicon compound layer is pre-cured as necessary, and the porous insulating film precursor is exposed to UV through the silicon compound layer or pre-cured layer. | 02-12-2009 |
20090061633 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - According to an aspect of an embodiment, a method of manufacturing a semiconductor device has forming an insulating layer comprising silica-based insulating material, processing the insulating layer, hydrophobizing the insulating layer by applying a silane compound to act on the insulating layer; and irradiating the insulating layer with light or an electron beam. | 03-05-2009 |
20090085170 | INTERFACIAL ROUGHNESS REDUCING FILM, WIRING LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - An interfacial roughness reducing film which is in contact, on one side thereof, with an insulating film and in contact, on a side opposite from the one side, with wiring comprises a Si—O bond, and is formed using a composition containing a silicon compound that comprises at least one bond of Si—N bonds and Si—Cl bonds wherein the number of Si—N bonds and Si—Cl bonds combined per molecule of the compound is at least two. An interfacial roughness between the interfacial roughness reducing film and the wiring is smaller than that between the interfacial roughness reducing film and the insulating film. | 04-02-2009 |
20090163039 | Composition for forming insulating film and method for fabricating semiconductor device - A method for fabricating a semiconductor device utilizing the step of forming a first insulating film of a porous material over a substrate; the step of forming on the first insulating film a second insulating film containing a silicon compound containing Si—CH | 06-25-2009 |
20090309196 | SURFACE-HYDROPHOBICIZED FILM, MATERIAL FOR FORMATION OF SURFACE-HYDROPHOBICIZED FILM, WIRING LAYER, SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE - A surface-hydrophobicized film is provided which is in contact with an insulating film, and has a higher hydrophobicity than the insulating film at the time of the contact, and which is in contact, on an opposite side of the surface-hydrophobicized film, with wiring, and contains at least one atom selected from the group consisting of sulfur atoms, phosphorus atoms and nitrogen atoms. Semiconductor devices with wiring layers having a low leakage current, a high EM resistance and a high TDDB resistance can be manufactured by using the film. | 12-17-2009 |
20090309221 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - A semiconductor device of this invention has a copper wiring layer, of which a layer, to which a composition including at least one substance selected from the group consisting of ammonia and organic bases is applied, and a silicon-containing insulating film are sequentially superimposed on the copper wiring layer. Accordingly, semiconductor devices having insulating layers which adheres well to the copper serving as the wiring material can be obtained. | 12-17-2009 |
20100007031 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE - The invention provides an agent for post-etch treating a silicon dielectric film, including: at least one nitrogen-containing substance selected from the group consisting of ammonium bases and amine compounds; an acid; and at least one silicon-containing compound containing silicon, carbon and hydrogen. According to the present invention, it becomes possible to suppress an increase in the dielectric constant of a silicon dielectric film caused by etching. | 01-14-2010 |
20100133692 | PROCESS FOR PRODUCING SILICIC COATING, SILICIC COATING AND SEMICONDUCTOR DEVICE - A silicic coating of 2.4 g/cm | 06-03-2010 |
20100140807 | INSULATING FILM MATERIAL, MULTILAYER WIRING BOARD AND PRODUCTION METHOD THEREOF, AND SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF - An insulating film material, which contains a polycarbosilane compound expressed by the following structural formula 1; | 06-10-2010 |
20100155121 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The silica film forming material of the present invention comprises a silicone polymer which comprises, as part of its structure, CHx, an Si—O—Si bond, an Si—CH | 06-24-2010 |
20100176496 | MATERIAL FOR FORMING EXPOSURE LIGHT-BLOCKING FILM, MULTILAYER INTERCONNECTION STRUCTURE AND MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR DEVICE - To provide a material for forming an exposure light-blocking film which includes at least one of a silicon compound expressed by the following structural formula (1) and a silicon compound expressed by the following structural formula (2), wherein at least one of R | 07-15-2010 |
20100210106 | SEMICONDUCTOR DEVICE HAVING A INTERLAYER INSULATION FILM WITH LOW DIELECTRIC CONSTANT AND HIGH MECHANICAL STRENGTH - A method for fabricating a semiconductor includes the steps of forming a porous insulation film and wires on a substrate, the wires embedded in the porous insulation film having a portion adjacent to the wires and a remote portion spaced apart from the wires; and applying an energy beam to the remote portion to change the structure of the porous insulation film such that an Young's modulus of the porous insulation film increased so as to substantially reinforce the strength of the porous insulation film. | 08-19-2010 |
20100320618 | INTERCONNECTION SUBSTRATE, SEMICONDUCTOR DEVICE, AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE - An interconnection substrate including: a first insulating film made of a silicon compound, an adhesion enhancing layer formed on the first insulating film, and a second insulting film made of a silicon compound and formed on the adhesion enhancing layer, wherein the first insulating film and the second insulating film are combined together with a component having a structure represented by General Formula (1) described below: | 12-23-2010 |
20110068471 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The method of manufacturing a semiconductor device includes forming an insulating film of a silicon compound-group insulation film; forming an opening in the insulation film, applying an active energy beam in an atmosphere containing hydrocarbon gas to form a barrier layer of a crystalline SiC, and forming an interconnection structure of copper in the opening with the barrier layer formed in. | 03-24-2011 |
20110187002 | SEMICONDUCTOR DEVICE AND ITS MANUFACTURE METHOD - A support substrate includes a first surface and a second surface located above the level of the first surface. Chips are mounted on the first surface. A first insulating film is disposed over each chip. First conductive plugs are connected to the chip extending through each first insulating film. Filler material made of resin filling a space between chips. Wirings are disposed over the first insulating film and the filler material for interconnecting different chips. The second surface, an upper surface of the first insulating film and an upper surface of the filler material are located at the same level. | 08-04-2011 |
20110223766 | METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes: exposing an insulating film including a siloxane bond to an energy beam or plasma; and exposing the insulating film to a gas (excluding N | 09-15-2011 |
20120181070 | INTERCONNECTION STRUCTURE AND METHOD OF FORMING THE SAME - After a copper interconnection is formed above a substrate, a surface of the copper interconnection is activated by performing acid cleaning. Thereafter, the substrate is immersed in a BTA (Benzo triazole) aqueous solution to form a protection film covering the surface of the copper interconnection. At this time, Cu—N—R bonds (R is an organic group) are formed in grain boundary portions in the surface of the copper interconnection. Thereafter, the protection film is removed by performing alkaline cleaning. The Cu—N—R bonds remain in the grain boundary portions in the surface of the copper interconnection even after the protection film is removed. Subsequently, the surface of the copper interconnection is subjected to an activation process, and a barrier layer is formed thereafter by electroless-plating the surface of the copper interconnection with NiP or CoWP. | 07-19-2012 |
20120325920 | FORMING METHOD OF INTERCONNECTION STRUCTURE, FABRICATION METHOD OF SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - A method of forming an interconnection structure includes forming an opening in an insulation film by a dry etching process that uses an etching gas containing fluorine; cleaning a bottom surface and a sidewall surface of the opening by exposing to a superheated steam; covering the bottom surface and the sidewall surface of the opening with a barrier metal film; depositing a conductor film on the insulation film via the barrier metal film to fill the opening with the conductor film; forming an interconnection pattern by the conductor film in the opening by polishing the conductor film and the barrier metal film underneath the conductor film by a chemical mechanical polishing process until a surface of the insulation film is exposed. | 12-27-2012 |
20130154102 | SEMICONDUCTOR DEVICE AND ITS MANUFACTURE METHOD - A support substrate includes a first surface and a second surface located above the level of the first surface. Chips are mounted on the first surface. A first insulating film is disposed over each chip. First conductive plugs are connected to the chip extending through each first insulating film. Filler material made of resin filling a space between chips. Wirings are disposed over the first insulating film and the filler material for interconnecting different chips. The second surface, an upper surface of the first insulating film and an upper surface of the filler material are located at the same level. | 06-20-2013 |
20130233489 | APPARATUS FOR WET ETCHING WHILE FORMING INTERCONNECT TRENCH IN INSULATING FILM - A wet etching method that includes forming an insulating film on a substrate, and irradiating laser light to the insulating film during wet etching of the insulating film using an etching solution. | 09-12-2013 |