Yoshifuku
Kazunori Yoshifuku, Tokyo JP
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20090178908 | SWITCH STRUCTURE OF AUTOMATIC EXTERNAL DEFIBRILLATOR - A switch structure of an automatic external defibrillator including a housing member and a flap member for covering the housing member, open and closed states of the flap member and ON and OFF of a switch of the automatic external defibrillator which are associated with each other, the switch structure includes a movable unit for turning ON the switch when the flap member is in the open state and turning OFF the switch when the flap member is in the closed state and an operator performs further operation. | 07-16-2009 |
Minoru Yoshifuku, Iga-Shi JP
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20140356781 | MAGNETIC CARRIER, TWO-COMPONENT DEVELOPER, REPLENISHING DEVELOPER, AND IMAGE FORMING METHOD - A magnetic carrier includes resin-filled magnetic core particles including porous magnetic particles whose pores are filled with a resin, and resin coating layers on the surfaces of the resin-filled magnetic core particles. The porous magnetic particles have specific electrical properties. | 12-04-2014 |
20140356782 | MAGNETIC CARRIER, TWO-COMPONENT DEVELOPER, DEVELOPER FOR REPLENISHMENT, AND IMAGE FORMING METHOD - A magnetic carrier contains a resin-filled magnetic core particle and a resin covering layer provided on a surface of the resin-filled magnetic core particle. The resin-filled magnetic core particle is a porous magnetic particle containing a resin in pores thereof. The magnetic carrier has a 50% particle diameter (D50) of 30.0 μm or more and 80.0 μm or less on a volume basis. An electric current flowing through the magnetic carrier at a voltage of 500 V ranges from 8.0 to 50.0 μA. | 12-04-2014 |
20140356783 | MAGNETIC CARRIER, TWO-COMPONENT DEVELOPER, DEVELOPER FOR REPLENISHMENT, AND IMAGE FORMING METHOD - There is provided a magnetic carrier having a resin coating layer formed on the surface of each of particles prepared by putting resin in the pores of porous magnetic particles, wherein | 12-04-2014 |
20150241807 | MAGNETIC CARRIER AND TWO-COMPONENT DEVELOPER - Provided is a magnetic carrier, including magnetic carrier particles each including: a magnetic carrier core including a magnetic material and a resin; and a resin coating layer formed on a surface of the magnetic carrier core, in which: the resin included in the magnetic carrier core has a hydroxy group; a surface portion of the magnetic carrier core includes a specific compound; and the magnetic carrier has an adsorbed moisture amount of 0.40 mass % or less when the magnetic carrier is left to stand in an environment of a temperature of 30° C. and a humidity of 80% RH for 72 hours. | 08-27-2015 |
Ryoichi Yoshifuku, Kanagawa JP
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20110081753 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device is provided for improving the reliability of a semiconductor device including a MISFET with a high dielectric constant gate insulator and a metal gate electrode. A first Hf-containing insulating film containing Hf, La, and O as a principal component is formed as a high dielectric constant gate insulator for an n-channel MISFET. A second Hf-containing insulating film containing Hf, Al, and O as a principal component is formed as a high dielectric constant gate insulator for a p-channel MISFET. Then, a metal film and a silicon film are formed and patterned by dry etching to thereby form first and second gate electrodes. Thereafter, parts of the first and second Hf-containing insulating films not covered with the first and second gate electrodes are removed by wet etching. At this time, a wet process with an acid solution not containing hydrofluoric acid, and another wet process with an alkaline solution are performed, and then a further wet process with an acid solution containing hydrofluoric acid is performed. | 04-07-2011 |
Toshimitsu Yoshifuku, Minato-Ku JP
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20150323822 | DISPLAY DEVICE - According to one embodiment, provided is a display device with an improved manufacturability which is capable of preventing a decrease in the display quality due to a change in the gap between an array substrate and a counter substrate caused by a temperature change. The primary bonding portion is composed of translucent synthetic resin and provided to bond together the counter substrate side and a touch panel side in a manner covering at least a display area. The secondary bonding portion is provided in a columnar shape through curing of adhesive being ultraviolet curable liquid resin with a viscosity higher than that of the synthetic resin of the primary bonding portion, the secondary bonding portion bonding together the non-opposed portion side and the touch panel side. | 11-12-2015 |
Yuko Yoshifuku, Tokyo JP
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20100044755 | SEMICONDUCTOR DEVICE - A pMIS region is provided between a boundary extending in a first direction and passing through each of a plurality of standard cells and a first peripheral edge. An nMIS region is provided between the boundary and a second peripheral edge. A power supply wiring and a grounding wiring extend along the first and second peripheral edges, respectively. A plurality of pMIS wirings and a plurality of nMIS wirings are arranged on a plurality of first virtual lines and a plurality of second virtual lines, respectively, extending in the first direction and arranged with a single pitch in a second direction. The first virtual line that is the closest to the boundary and the second virtual line that is the closest to the boundary have therebetween a spacing larger than the single pitch. | 02-25-2010 |
20120261723 | SEMICONDUCTOR DEVICE - A pMIS region is provided between a boundary extending in a first direction and passing through each of a plurality of standard cells and a first peripheral edge. An nMIS region is provided between the boundary and a second peripheral edge. A power supply wiring and a grounding wiring extend along the first and second peripheral edges, respectively. A plurality of pMIS wirings and a plurality of nMIS wirings are arranged on a plurality of first virtual lines and a plurality of second virtual lines, respectively, extending in the first direction and arranged with a single pitch in a second direction. The first virtual line that is the closest to the boundary and the second virtual line that is the closest to the boundary have therebetween a spacing larger than the single pitch. | 10-18-2012 |
Yuko Yoshifuku, Kawasaki-Shi JP
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20140239406 | SEMICONDUCTOR DEVICE - A pMIS region is provided between a boundary extending in a first direction and passing through each of a plurality of standard cells and a first peripheral edge. An nMIS region is provided between the boundary and a second peripheral edge. A power supply wiring and a grounding wiring extend along the first and second peripheral edges, respectively. A plurality of pMIS wirings and a plurality of nMIS wirings are arranged on a plurality of first virtual lines and a plurality of second virtual lines, respectively, extending in the first direction and arranged with a single pitch in a second direction. The first virtual line that is the closest to the boundary and the second virtual line that is the closest to the boundary have therebetween a spacing larger than the single pitch. | 08-28-2014 |