Patent application number | Description | Published |
20080210957 | LIGHT EMITTING DIODE, METHOD FOR MANUFACTURING LIGHT EMITTING DIODE, INTEGRATED LIGHT EMITTING DIODE, METHOD FOR MANUFACTURING INTEGRATED LIGHT EMITTING DIODE, LIGHT EMITTING DIODE BACKLIGHT, LIGHT EMITTING DIODE ILLUMINATION DEVICE, LIGHT EMITTING DIODE DISPLAY, ELECTRONIC APPARATUS, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE - Disclosed herein is a light emitting diode includes: a first semiconductor layer of a first conductivity type; an active layer on the first semiconductor layer; a second semiconductor layer of a second conductivity type on the active layer; a first electrode configured to be electrically coupled to the first semiconductor layer; and a second electrode configured to be provided on the second semiconductor layer and be electrically coupled to the second semiconductor layer, the second electrode including a first metal film that has a predetermined shape and is composed mainly of silver and a second metal film that covers the first metal film and is composed mainly of palladium and/or platinum. | 09-04-2008 |
20090137076 | SURFACE EMITTING SEMICONDUCTOR LASER, ITS MANUFACTURING METHOD, AND MANUFACTURING METHOD OF ELECTRON DEVICE - A surface emitting semiconductor laser which can perform laser oscillation in a single peak beam like that in a single lateral mode and a manufacturing method which can easily manufacture such a laser at a high yield are provided. When a surface emitting semiconductor laser having a post type mesa structure is formed on an n-type semiconductor substrate, a mesa portion is formed and up to a p-side electrode and an n-side electrode are formed. Thereafter, a voltage is applied across the p-side and n-side electrodes and the laser is subjected to a steam atmosphere while extracting output light, thereby forming an Al oxide layer onto a p-type Al | 05-28-2009 |
20090243187 | MEDIUM FEEDING UNIT AND IMAGE FORMING APPARATUS - An image forming apparatus includes: a first feeding unit and a second feeding unit. In the first feeding unit, a hand-feeding unit having a hand-feeding accommodating portion is mounted. The first feeding unit includes a first mounting portion into which a medium is conveyed from the hand-feeding accommodating portion. And a connection unit for consecutive installation is mounted to the first mounting portion in a state where the hand-feeding unit is removed from the first mounting portion. The connection unit includes an added conveyance path for consecutive installation. The second feeding unit includes a second mounting portion in which the hand-feeding unit is mounted and into which a medium is conveyed from the hand-feeding accommodating portion. And the second feeding unit is connected to the added conveyance path. | 10-01-2009 |
20100177799 | SURFACE LIGHT EMITTING SEMICONDUCTOR LASER ELEMENT - A surface light emitting semiconductor laser element, comprises a substrate, a lower reflector including a semiconductor multi-layer disposed on the substrate, an active layer disposed on the lower reflector, an upper reflector including a semiconductor multi-layer disposed on the active layer, a compound semiconductor layer having a first opening for exposing the upper reflector and extending over the upper reflector, and a metal film having a second opening for exposing the upper reflector disposed inside of the first opening and extending over the compound semiconductor layer, wherein the metal film and the compound semiconductor layer constitute a complex refractive index distribution structure where a complex refractive index is changed from the center of the second opening towards the outside. A method of emitting laser light in a single-peak transverse mode is also provided. | 07-15-2010 |
20110068363 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer. | 03-24-2011 |
20110249975 | Communications system and communications lighting apparatus - An optical-information transmitting, lighting apparatus | 10-13-2011 |
20150024221 | ELECTRONIC UNIT, OPTICAL DISK UNIT, DISPLAY UNIT, AND IMAGE PICKUP UNIT - An electronic unit includes: an electronic device; and a protective film including an aluminum oxide layer and silicon oxide, the aluminum oxide layer with which the electronic device is covered, and the silicon oxide being scattered on a surface of the aluminum oxide layer. | 01-22-2015 |
20150293319 | SURFACE LIGHT EMITTING SEMICONDUCTOR LASER ELEMENT - A surface light emitting semiconductor laser element, comprises a substrate, a lower reflector including a semiconductor multi-layer disposed on the substrate, an active layer disposed on the lower reflector, an upper reflector including a semiconductor multi-layer disposed on the active layer, a compound semiconductor layer having a first opening for exposing the upper reflector and extending over the upper reflector, and a metal film having a second opening for exposing the upper reflector disposed inside of the first opening and extending over the compound semiconductor layer, wherein the metal film and the compound semiconductor layer constitute a complex refractive index distribution structure where a complex refractive index is changed from the center of the second opening towards the outside. A method of emitting laser light in a single-peak transverse mode is also provided. | 10-15-2015 |