Patent application number | Description | Published |
20110096865 | Digital predistortion transmitter - There is a need for effectively compensating distortion when a predistortion transmitter is subject to not only a memory effect due to nonlinearity of an amplifier, but also a modulator's DC offset, IQ unbalance, or local quadrature error. A predistortor to be used is a polynomial predistortor including a polynomial basis generation portion and an inner product calculation portion. The polynomial basis generation portion delays a real part and an imaginary part of a complex input signal Sx=Ix+jQx for up to M samples to generate 2(M+1) signals, duplicately combines these signals to generate monomials having maximum degree N, and outputs, as a basis vector, all or part of the monomials depending or needs. The inner product calculation portion performs an inner product calculation using a coefficient vector, i.e., a set of complex numbers sized equally to the basis vector to find a polynomial value and outputs the value as a complex signal. | 04-28-2011 |
20130324181 | WIRELESS COMMUNICATION SYSTEM, COMMUNICATION METHOD, AND BASE STATION - It is provided a wireless communication system comprising a terminal device and a base station. The terminal device includes a plurality of wireless transmitters, an antenna coupled to each of the wireless transmitters, and a controller generating a signal to be transmitted from the antenna. The base station includes a plurality of wireless receivers, an antenna coupled to each of the wireless receivers, and a controller. The terminal device holds a predetermined upper limit of power consumption. The base station changes at least one of a MIMO multiplexing number, a modulation system, and a coding rate so that communication is performed according to a communication system that can communicate at allowable transmission power of the terminal device in case where power consumption of the terminal device exceeds the upper limit upon performing the MIMO transmission at maximum transmission power according to the wireless standard. | 12-05-2013 |
Patent application number | Description | Published |
20090236630 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride semiconductor light emitting device includes a nitride semiconductor multilayer film. The nitride semiconductor multilayer film is formed on a substrate and made of nitride semiconductor crystals, and includes a light emitting layer. In the nitride semiconductor multilayer film, facets of a cavity are formed, and a protective film made of aluminum nitride crystals is formed on at least one of the facets. The protective film has a crystal plane whose crystal axes form an angle of 90 degrees with crystal axes of a crystal plane of the nitride semiconductor crystals constituting the facet of the cavity having the protective film formed thereon. | 09-24-2009 |
20100014550 | NITRIDE SEMICONDUCTOR LASER DEVICE - A nitride semiconductor laser device includes a multilayer structure including a plurality of nitride semiconductor layers including a light emitting layer, the multilayer structure having cavity facets facing each other, and a plurality of protective films made of a dielectric material provided on one of the cavity facets. The protective films include a first protective film, a second protective film and a third protective film. The first protective film contacts the cavity facet and is made of aluminum nitride. The second protective film is provided on a surface opposite to the cavity facet of the first protective film and is made of a material different from that of the first protective film. The third protective film is provided on a surface opposite to the first protective film of the second protective film and is made of the same material as that of the first protective film. | 01-21-2010 |
20100296542 | SEMICONDUCTOR LASER APPARATUS - A semiconductor laser apparatus includes, on a substrate, a first-conductivity type layer, an active layer, a second-conductivity type layer having a ridge extending along an optical waveguide direction, and a current blocking layer formed on sides of the ridge. The ridge is disposed to separate the substrate into a first region having a first width, and a second region having a second width greater than the first width, in a direction perpendicular to the optical waveguide direction. The second-conductivity type layer has a shock attenuating portion having a height greater than or equal to that of the ridge, on sides of the ridge. In the second region, a trench extending from an upper surface of the shock attenuating portion, penetrating at least the active layer, and reaching the first-conductivity type layer, is formed along the optical waveguide direction. | 11-25-2010 |
20110057220 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A nitride semiconductor light-emitting device includes a laminate structure formed of a plurality of nitride semiconductor layers including a light-emitting layer, and having cavity facets facing each other, a first protection film made of AlN, formed over a light-emitting facet of the cavity facets, and a second protection film made of Al | 03-10-2011 |
20110058584 | SEMICONDUCTOR LASER DEVICE AND FABRICATION METHOD FOR THE SAME - A semiconductor laser device includes a semiconductor multilayer structure | 03-10-2011 |
20110176568 | NITRIDE SEMICONDUCTOR LASER DIODE - A nitride semiconductor laser diode includes a second conductive cladding layer formed on an active layer, and including a ridge portion having a raised cross-sectional shape, and flat portions located on both sides of the ridge portion; a light-absorbing layer formed on each of the flat portions, and having an optical absorption coefficient larger than the second conductive cladding layer. The light-absorbing layer includes a first region provided at a side of a light-emitting facet, and having a distance Di1 from a line-symmetric axis in a longitudinal direction of the ridge portion to a side surface of the light-absorbing layer; and a second region provided at a side opposite to the light-emitting facet, and having a distance Di2 from the line-symmetric axis to the side surface of the light-absorbing layer. A relationship between the Di1 and the Di2 is represented by Di107-21-2011 | |
20110292959 | SEMICONDUCTOR LASER DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor laser device includes a semiconductor laminated film including a ridge stripe portion. The semiconductor laminated film includes a first scribed level-different portion formed in a resonator surface which is an edge surface thereof intersecting the ridge stripe portion and a second scribed level-different portion formed in each side surface thereof extending in parallel to the ridge stripe portion, the first scribed level-difference portion is located between the second scribed level-different portion and the ridge stripe portion, a cross-sectional shape of the first scribe level-different portion taken along the resonator surface is polygonal, and one of angles of inclined parts which is located closer to an associated one of the ridge stripe portions is smaller than the other one of the angles located closer to an associated one of the second scribed portions, the inclined parts being sides of the polygonal shape. | 12-01-2011 |
20120057612 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A nitride semiconductor device includes a multilayer semiconductor structure made of a group III nitride semiconductor and having a light-emitting facet, and a first coating film formed to cover the light-emitting facet of the multilayer semiconductor structure. The first coating film is a crystalline film made of a nitride containing aluminum. The crystalline film is composed of a group of single domains, and the single domain is comprised of a group of grains whose crystal orientation planes have a same inclination angle and a same rotation angle. A length of a boundary between the domains per unit area is 7 μm | 03-08-2012 |
20120114004 | NITRIDE SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME - A nitride semiconductor laser device includes a first semiconductor layer, an active layer, a second semiconductor layer having a ridge portion and a planar portion, a first electrode formed above the ridge portion, and a dielectric film formed on the side wall portion of the ridge portion. A region from a front end face to a predetermined position P is a region A. A region from the predetermined position P to the rear end face is a region B. A thickness of the part of the ridge portion exposed from the dielectric film in the region A is greater than a thickness of the part of the ridge portion exposed from the dielectric film in the region B, and the first electrode is in contact with the ridge portion at least in the region A. | 05-10-2012 |
Patent application number | Description | Published |
20120239322 | ABNORMALITY DIAGNOSIS DEVICE, METHOD THEREFOR, AND COMPUTER-READABLE MEDIUM - There is provided an abnormality diagnosis device including: a storage storing power generation output data representing a current and a voltage of electrical power generated by each of the subsystems according to sampling time; a correcting unit configured to correct, for each of the subsystems, at least the current out of the current and the voltage in the power generation output data to a current corresponding to a standard insolation condition to generate corrected data including a corrected current and either one of a corrected voltage or the voltage in the power generation output data; a gradient estimating unit configured to produce, for each of the subsystems, an approximation graph of the corrected data and calculate a gradient of the approximation graph; and an abnormality diagnosing unit determining a subsystem for which the gradient satisfies a first threshold to be a subsystem including an abnormal module. | 09-20-2012 |
20130082724 | PV PANEL DIAGNOSIS DEVICE, DIAGNOSIS METHOD AND DIAGNOSIS PROGRAM - A PV panel diagnosis technology is provided which can surely find a deteriorated panel in a solar power generation system. A PV panel diagnosis device includes an adjusting unit that adjusts an impedance for a PV panel circuit connected with a plurality of PV panels, a measured-value storing unit that stores, as a measured value, a voltage or a current measured through the PV panel circuit in accordance with a change in the impedance, a change-amount determining unit that determines a change amount of the voltage or the current based on the measured value in accordance with the change in the impedance, and a specifying unit that specifies a deteriorated PV panel based on a comparison result of the change amount with a predetermined threshold. | 04-04-2013 |
20130238541 | APPARATUS AND A METHOD FOR RETRIEVING AN OBJECT - According to one embodiment, an object retrieval apparatus includes a query acceptance unit and a collision decision unit. The query acceptance unit is configured to accept a retrieval query indicating (N-1)-dimensional surface in N-dimensional space (N is an integral number larger than or equal to three). The collision decision unit is configured to decide whether the (N−1)-dimensional surface intersects N-dimensional cuboid positioned in the N-dimensional space. The collision decision unit decides by using a plurality of decision functions. The plurality of decision functions includes zero-th˜(N−1)-th decision functions to decide whether at least a part of at least one of X-dimensional face (X is all integral numbers larger than or equal to zero, and smaller than or equal to (N−1)) of the N-dimensional cuboid is included in the (N−1)-dimensional surface. | 09-12-2013 |
20130262190 | APPARATUS AND A METHOD FOR DETERMINING A MAINTENANCE PLAN - Maintenance actions, maintenance costs each differently corresponding to each maintenance action, a reference strategy and a fault model, are stored. If a system is maintained by each maintenance action at a first timing, if the system is degraded by the fault model from the first timing to a predetermined timing, and if the system is maintained by the reference strategy from a second timing after passing a predetermined period from the first timing to the predetermined timing, at least one search timing is set into a search period from the first timing to the second timing. A maintenance action value of each maintenance action is calculated at the search timing, based on an output and the maintenance cost of the system maintained from the first timing to the predetermined timing. An optimum maintenance action is selected from the maintenance actions, based on the maintenance action value of each maintenance action. | 10-03-2013 |
20150083198 | PHOTOVOLTAIC POWER GENERATION SYSTEM - According to an embodiment, a photovoltaic power generation system includes a photovoltaic array group and a windbreak. The photovoltaic array group includes a plurality of photovoltaic arrays, each of the photovoltaic arrays including a plurality of solar panels and a support structure which supports the solar panels. The windbreak is arranged at least partly around the photovoltaic array group and includes a plurality of windbreaker elements, each of the windbreaker having a horizontal section of an airfoil shape or a plurality of windbreaker elements each formed by combining a plurality of flat plates. | 03-26-2015 |
20150083199 | PHOTOVOLTAIC POWER GENERATION SYSTEM - According to an embodiment, a photovoltaic power generation system includes a photovoltaic array group and a windbreak. The photovoltaic array group includes a plurality of photovoltaic arrays, each of the photovoltaic arrays including a plurality of solar panels and a support structure which supports the solar panels. The windbreak is arranged behind the photovoltaic array group and includes a curved surface configured to guide at least some of a wind, which blows from a back side of the photovoltaic array group toward the photovoltaic array group, to an upper side of the photovoltaic array group. | 03-26-2015 |
Patent application number | Description | Published |
20120323507 | FAULT DETECTION APPARATUS AND FAULT DETECTION METHOD - According to one embodiment, an apparatus includes an first storage unit to store a value output by a communication unit, a second storage unit to store positional data indicating a place the modules, an third storage unit to store an output model indicating the relationship between a sunshine condition and an electrical output, a estimation unit to estimate a sunshine condition for each module based on the value and the output model, a forth storage unit to store the sunshine condition estimated, a correction unit to correct the sunshine condition, and a detection unit to calculate an expected electrical output for each module based on the corrected sunshine condition and the output model, and to detect a fault in the modules. | 12-20-2012 |
20130024034 | ELECTRICAL QUANTITY ADJUSTING APPARATUS, ELECTRICAL QUANTITY ADJUSTING METHOD, ELECTRICAL QUANTITY ADJUSTING PROGRAM AND POWER SUPPLY SYSTEM - According to one embodiment, an electrical quantity adjusting apparatus connected to an electrical facility includes a memory unit that stores a target level which is a target electrical quantity, a presenting level deciding unit that decides a presenting level to an exterior, the presenting level being an electrical quantity relating to the electrical facility and corresponding to at least a part at the target level, a presenting level output unit that outputs the presenting level decided by the presenting level deciding unit to the exterior via a communication network, a presenting level receiving unit that receives a presenting level from the exterior via the communication network, and an adjusting unit that adjusts the electrical quantity relating to the electrical facility based on the target level, the presenting level decided by the presenting level deciding unit, and the presenting level received by the presenting level receiving unit. | 01-24-2013 |