Patent application number | Description | Published |
20110280083 | NONVOLATILE MEMORY DEVICE AND PROGRAM METHOD THEREOF - A nonvolatile memory device and a programming method thereof perform a programming verification step including a selective verification step and a sequential verification step. In the selective verification step, a data input/output (I/O) circuit selectively precharges a selected bit line according to a temporary programmed state of stored data. In the sequential verification step, the data I/O circuit selectively precharges each bit line according to the result of the previous selective verification step or a previous sequential verification step. According to the programming method, because a memory cell not requiring a programming verification step is not precharged in the programming verification step, an ON cell current does not flow therethrough. Accordingly, the current flowing through a common source line during verification can be reduced. | 11-17-2011 |
20120127802 | NON-VOLATILE MEMORY DEVICE, METHOD OF OPERATING THE SAME, AND ELECTRONIC DEVICE HAVING THE SAME - In one embodiment, the method includes receiving an operation command, detecting a noise level of a common source line, and adjusting a number of times to perform an operation on a memory cell in response to the operation command based on the detected noise level. | 05-24-2012 |
20120134213 | METHOD COMPENSATION OPERATING VOLTAGE, FLASH MEMORY DEVICE, AND DATA STORAGE DEVICE - Disclosed is a method generating a compensated operating voltage, such as a read voltage, in a non-volatile memory device, and a related non-volatile memory device. The operating voltage is compensated in response to one or more memory cell conditions such as temperature variation, programmed data state or physical location of a selected memory cell, page information for selected memory cell, or the location of a selected word line. | 05-31-2012 |
20130010539 | NONVOLATILE MEMORY DEVICE PROVIDING NEGATIVE VOLTAGE - Disclosed is a nonvolatile memory device which includes memory blocks, a pre-decoder, and a row decoder. Each of the memory blocks has a plurality of memory cells. The pre-decoder includes a multiplexer and negative level shifters. The multiplexer is configured to generate multiplexing signals in response to address signals. Each of the negative level shifters is configured to generate a converted multiplexing signal corresponding to a respective multiplexing signal by converting a multiplexing signal having a ground voltage into a converted multiplexing signal having a first negative voltage. The row decoder is configured to select at least one of the memory blocks in response to the converted multiplexing signals. | 01-10-2013 |
20130121083 | NON-VOLATILE MEMORY DEVICE, METHOD OF OPERATING THE SAME, AND ELECTRONIC DEVICE HAVING THE SAME - In one embodiment, the method includes detecting a noise level of a common source line, and adjusting a frequency of program-verify operations on a memory cell during a programming loop based on the detected noise level. | 05-16-2013 |
20140169101 | METHOD COMPENSATION OPERATING VOLTAGE, FLASH MEMORY DEVICE, AND DATA STORAGE DEVICE - Disclosed is a method generating a compensated operating voltage, such as a read voltage, in a non-volatile memory device, and a related non-volatile memory device. The operating voltage is compensated in response to one or more memory cell conditions such as temperature variation, programmed data state or physical location of a selected memory cell, page information for selected memory cell, or the location of a selected word line. | 06-19-2014 |
20150221375 | NONVOLATILE MEMORY DEVICE AND METHOD OF PROGRAMMING THE SAME - In a method of programming a three-dimensional nonvolatile memory device, a program loop is executed at least one time, wherein the program loop includes a programming step for programming selected memory cells among the memory cells and a verifying step for verifying whether the selected memory cells are program-passed or not. In the programming the selected memory cells, a level of a voltage being applied to a common source line connected to the strings in common may be changed. Thus, in a program operation, power consumption which is needed to charge-discharge the common source line can be decreased while increasing boosting efficiency. | 08-06-2015 |
20150221376 | NONVOLATILE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF - A programming method is for programming a nonvolatile memory device including a plurality of strings disposed perpendicular to a substrate and connected between bitlines and a common source line. The programming method includes setting up the common source line to a predetermined voltage, floating the setup common source line, performing a program operation on memory cells connected to a selected wordline, and performing a verify operation on the memory cells. | 08-06-2015 |