Patent application number | Description | Published |
20080204095 | METHOD AND APPARATUS FOR CONTROLLING POWER-DOWN MODE OF DELAY LOCKED LOOP - A method and apparatus for controlling a power-down mode of a delay locked loop (DLL), in which the apparatus includes a first switch unit, a DLL, and a second switch unit. The first switch unit transfers a first clock signal in response to a clock input enable signal. The DLL receives the first clock signal through the first switch unit to generate a second clock signal and is turned off by a power-down signal that is generated from the first clock signal latched by the first switch unit. The second switch unit transfers the second clock signal in response to a clock output enable signal. In a power-down mode, the clock input enable signal is deactivated in response to a clock enable signal and the clock output enable signal is deactivated after a predetermined number of clock cycles that are necessary for the latched first clock signal to be completely transferred through the delay cells of the DLL to an output terminal of the DLL. In a power-down exit mode, the power-down signal is deactivated in response to the clock enable signal and the clock input enable signal and the clock output enable signal are activated after a predetermined number of clock cycles that are necessary for the latched second clock signal to be completely transferred through the delay cells. Of the DLL to the output terminal of the DLL. | 08-28-2008 |
20090196112 | Block decoding circuits of semiconductor memory devices and methods of operating the same - A block decoding circuit of a semiconductor memory device includes a plurality of block decoders, a plurality of repair address check circuits, a dummy repair address check circuit and a block selection signal generation circuit. The plurality of block decoders are configured to decode a received block selection address. The plurality of repair address check circuits are configured to generate second output signals based on whether a received block selection address and word line selection address are repair addresses. The dummy repair address check circuit is configured to generate a control signal in response to the block selection address and the word line selection address. The block selection signal generation circuit is configured to generate block selection signals based on the first output signals from the plurality of block decoders, the control signal from the dummy repair address circuit, and the second output signals from the repair address check circuits. | 08-06-2009 |
20100194412 | SEMICONDUCTOR DEVICE FOR GENERATING INTERNAL VOLTAGE AND MEMORY SYSTEM INCLUDING THE SEMICONDUCTOR DEVICE - A semiconductor device includes a comparator, an internal voltage generator, a control signal generator, and a selector. The comparator may compare a reference voltage to an internal voltage and output a comparison signal. The internal voltage generator may generate and output the internal voltage in response to the comparison signal. The control signal generator may generate a control signal. The selector may receive first and second target voltages, and select and output one of the first and second target voltages as the reference voltage in response to the control signal. | 08-05-2010 |
20100195414 | LEVEL DETECTOR, INTERNAL VOLTAGE GENERATOR INCLUDING LEVEL DETECTOR, AND SEMICONDUCTOR MEMORY DEVICE INCLUDING INTERNAL VOLTAGE GENERATOR - A level detector, an internal voltage generator including the level detector, and a semiconductor memory device including the internal voltage generator are provided. The internal voltage generator includes a level detector that compares a threshold voltage that varies with temperature with an internal voltage to output a comparative voltage, and an internal voltage driver that adjusts an external supply voltage in response to the comparative voltage and that outputs an internal voltage. | 08-05-2010 |
20100246295 | SEMICONDUCTOR MEMORY DEVICE COMPRISING VARIABLE DELAY CIRCUIT - A semiconductor memory device comprises a memory cell configured to output data to a pair of bitlines, a variable delay circuit configured to receive a sense amplifier enable signal, adjust a delay of the sense amplifier enable signal by changing a slope of a delay based on a variable external power supply voltage, and output a delayed sense amplifier enable signal, and a bitline sense amplifier configured to amplify a voltage difference between the pair of bitlines in response to the delayed sense amplifier enable signal and output the amplified voltage difference to a pair of input/output lines. | 09-30-2010 |
20110032785 | WORDLINE DRIVER, MEMORY DEVICE INCLUDING THE SAME AND METHOD OF DRIVING A WORDLINE - A wordline driver includes a pre-driver, a sub-wordline driver and a transmission circuit. The pre-driver generates a wordline enable signal and a wordline disable signal based on one or more selection signals, a decoded address signal, and one or more timing control signals. The transmission circuit transmits the wordline enable signal and the wordline disable signal. The sub-wordline driver controls a voltage level of the sub-wordline based on the wordline enable signal and the wordline disable signal that are transmitted by the transmission circuit. Therefore, driving capacity may be improved. | 02-10-2011 |
20130002217 | LEVEL DETECTOR, INTERNAL VOLTAGE GENERATOR INCLUDING LEVEL DETECTOR, AND SEMICONDUCTOR MEMORY DEVICE INCLUDING INTERNAL VOLTAGE GENERATOR - A level detector, an internal voltage generator including the level detector, and a semiconductor memory device including the internal voltage generator are provided. The internal voltage generator includes a level detector that compares a threshold voltage that varies with temperature with an internal voltage to output a comparative voltage, and an internal voltage driver that adjusts an external supply voltage in response to the comparative voltage and that outputs an internal voltage. | 01-03-2013 |
20130322149 | MEMORY DEVICE, METHOD OF OPERATING THE SAME, AND ELECTRONIC DEVICE HAVING THE MEMORY DEVICE - A memory device includes a memory cell array and a fuse device. The fuse device includes a fuse cell array and a fuse control circuit. The fuse cell array includes a first fuse cell sub-array which stores first data associated with operation of the fuse control circuit, and a second fuse cell sub-array which stores second data associated with operation of the memory device. The fuse control circuit is electrically coupled to the first and second fuse cell sub-arrays, and is configured to read the first and second data from the first and second fuse cell sub-arrays, respectively. | 12-05-2013 |
20140241085 | SEMICONDUCTOR MEMORY DEVICE FOR PERFORMING DISABLE OPERATION USING ANTI-FUSE AND METHOD THEREOF - A semiconductor memory device for performing a disable operation using an anti-fuse, and method thereof are provided. The semiconductor memory device according to an example embodiment includes a fuse circuit including at least one anti-fuse configured to store fuse data, a memory circuit configured to at least one of read data stored in a memory cell and write data to the memory cell and a fuse controller configured to disable a read/write operation of the memory circuit based on the fuse data. | 08-28-2014 |
Patent application number | Description | Published |
20100081015 | INTEGRAL CAP ASSEMBLY HAVING PROTECTIVE CIRCUIT MODULE, AND SECONDARY BATTERY COMPRISING THE SAME - An integral cap assembly comprising a top cap mounted as a base plate to an opening of a battery can and a cap subassembly including a protective circuit module and the like integrally mounted on the top cap, a method for manufacturing a secondary battery comprising the same, and a secondary battery manufactured thereby are disclosed. The cap assembly is provided as an integral member comprising the top cap acting as the base plate, and the cap subassembly having the protective circuit module provided thereon, thereby simplifying a manufacturing process of the battery while minimizing frequency of defective products. Additionally, the integral cap assembly is manufactured through insert injection molding, thereby providing notable advantages over the conventional technology. | 04-01-2010 |
20110177363 | INTEGRAL CAP ASSEMBLY HAVING PROTECTIVE CIRCUIT MODULE, AND SECONDARY BATTERY COMPRISING THE SAME - An integral cap assembly comprising a top cap mounted as a base plate to an opening of a battery can and a cap subassembly including a protective circuit module and the like integrally mounted on the top cap, a method for manufacturing a secondary battery comprising the same, and a secondary battery manufactured thereby are disclosed. The cap assembly is provided as an integral member comprising the top cap acting as the base plate, and the cap subassembly having the protective circuit module provided thereon, thereby simplifying a manufacturing process of the battery while minimizing frequency of defective products. Additionally, the integral cap assembly is manufactured through insert injection molding, thereby providing notable advantages over the conventional technology. | 07-21-2011 |