Yokotsuji
Hokuto Yokotsuji, Yokohama-Shi, Kanagawa-Ken JP
Patent application number | Description | Published |
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20140154591 | ELECTROLYTE FOR RECHARGEABLE LITHIUM BATTERY AND RECHARGEABLE LITHIUM BATTERY INCLUDING THE SAME - In an aspect, an electrolyte that includes a lithium salt, an organic solvent, and an additive is disclosed. | 06-05-2014 |
Hokuto Yokotsuji, Yokohama-Shi JP
Patent application number | Description | Published |
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20140141313 | POSITIVE ACTIVE MATERIAL LAYER FOR RECHARGEABLE LITHIUM BATTERY, SEPARATOR FOR RECHARGEABLE LITHIUM BATTERY, AND RECHARGEABLE LITHIUM BATTERY INCLUDING AT LEAST ONE OF SAME - A positive active material layer for a rechargeable lithium battery including a positive active material and a protection film-forming material is disclosed. A separator for a rechargeable lithium battery including a substrate and a porous layer positioned at least one side of the substrate and including a protection film-forming material is also disclosed. A rechargeable lithium battery can include at least one of the positive active material layer and the separator. | 05-22-2014 |
Yuta Yokotsuji, Kyoto JP
Patent application number | Description | Published |
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20140203299 | SEMICONDUCTOR DEVICE - The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage V | 07-24-2014 |
Yuta Yokotsuji, Kyoto-Shi JP
Patent application number | Description | Published |
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20150034970 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME - A semiconductor device of the present invention includes a semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode being in contact with a surface of the semiconductor layer. The semiconductor layer includes a drift layer that forms the surface of the semiconductor layer and a high-resistance layer that is formed on a surface layer portion of the drift layer and that has higher resistance than the drift layer. The high-resistance layer is formed by implanting impurity ions from the surface of the semiconductor layer and then undergoing annealing treatment at less than 1500° C. | 02-05-2015 |