| Patent application number | Description | Published |
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| 20110278492 | PLANT EXTRACT CONTAINING ANTIFREEZE SUBSTANCE AND METHOD FOR PRODUCING SAME - The objective of the present invention is to provide an antifreeze substance which is suitable for practical use and has excellent antifreeze activity in a safe process flow applicable to food production in a simple, efficient and inexpensive manner. The first method for producing a plant extract containing an antifreeze substance according to the present invention comprises the steps of drying a plant containing the antifreeze substance and extracting the antifreeze substance from the dried plant. The second method for producing a plant extract containing an antifreeze substance according to the present invention comprises the steps of extracting the antifreeze substance from a plant, and treating the obtained extract from the extracting step with an adsorbent. | 11-17-2011 |
| 20120070561 | METHOD FOR PRODUCING HEAT PROCESSED FOOD - An objective to be achieved by the present invention is to provide a method for producing a heat processed food which can be uniformly heated in a short time without causing “unevenness of heating” on microwave oven cooking. Another objective of the present invention is also to provide a heat professed food, use of an antifreeze protein in producing a heat processed food, a method for improving an effect of heating treatment on a heat professed food, and an agent for improving an effect of heating treatment. The method for producing a heat processed food according to the present invention is characterized in comprising the steps of adding an antifreeze protein to a food material or a food; and cooling the resulting mixture. | 03-22-2012 |
| 20120136138 | ICE-CRYSTAL GROWTH INHIBITING SUBSTANCE - An objective to be achieved by the present invention is to provide an ice-crystal growth inhibiting substance which has an excellent ice-crystal growth inhibiting activity suitable for practical use and which can be produced easily, efficiently and economically in safe steps usable in food production. Another objective of the present invention is to provide a method for producing the ice-crystal growth inhibiting substance, a polypeptide which is an active part of the ice-crystal growth inhibiting substance, as well as an ice-crystal growth inhibiting substance composition, a food, a biological sample protectant and a cosmetic each containing the ice-crystal growth inhibiting substance or the polypeptide. The ice-crystal growth inhibiting substance according to the present invention is characterized in that the ice-crystal growth inhibiting substance is derived from a plant, and has a molecular weight of 400 kDa or more as measured by gel filtration chromatography. | 05-31-2012 |
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| 20100219350 | Beam Detector and Beam Monitor Using The Same - A beam detector and a beam monitor using the same are provided, the beam detector being capable of precisely and stably detecting, for a long period of time, the position, the intensity distribution, and the change with time of radiation beams, soft x-ray beams, and the like and being manufactured at a low cost as compared to that of a conventional detection device. | 09-02-2010 |
| 20110024761 | INTERCONNECTION STRUCTURE, A THIN FILM TRANSISTOR SUBSTRATE, AND A MANUFACTURING METHOD THEREOF, AS WELL AS A DISPLAY DEVICE - Provided is a direct contact technology by which a barrier metal layer between an Al alloy interconnection composed of pure Al or an Al alloy and a semiconductor layer can be eliminated and the Al alloy interconnection can be directly and surely connected to the semiconductor layer within a wide process margin. In an interconnection structure, the semiconductor layer, and the Al alloy film composed of the pure Al or the Al alloy are provided on the substrate in this order from the substrate side. A multilayer structure of an (N, C, F) layer containing at least one type of an element selected from among a group composed of nitrogen, carbon and fluorine, and an Al—Si diffusion layer containing Al and Si is included in this order from the substrate side, between the semiconductor layer and the Al alloy film. At least the one type of the element, i.e., nitrogen, carbon or fluorine contained in the (N, C, F) layer is bonded with Si contained in the semiconductor layer. | 02-03-2011 |
| 20110121297 | WIRING STRUCTURE, THIN FILM TRANSISTOR SUBSTRATE, METHOD FOR MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE, AND DISPLAY DEVICE - Provided is a direct contact technology by which a barrier metal layer between a Cu alloy wiring composed of pure Cu or a Cu alloy and a semiconductor layer can be eliminated, and the Cu alloy wiring can be directly and surely connected to the semiconductor layer within a wide process margin. The wiring structure is provided with the semiconductor layer and the Cu alloy film composed of pure Cu or the Cu alloy on a substrate in this order from the substrate side. A laminated structure is included between the semiconductor layer and the Cu alloy film. The laminated structure is composed of an (N, C, F) layer, which contains at least one element selected from among a group composed of nitrogen, carbon and fluorine, and a Cu—Si diffusion layer, which contains Cu and Si, in this order from the substrate side. Furthermore, at least the one element selected from among the group composed of nitrogen, carbon and fluorine is bonded to Si contained in the semiconductor layer. | 05-26-2011 |
