Patent application number | Description | Published |
20100142286 | AUTO-PRECHARGE SIGNAL GENERATOR - An auto-precharge signal generation circuit comprises a signal generator, a set signal generator, and an auto-precharge signal generator. The signal generator is configured to generating a control signal and a precharge control signal in response to receiving a first column address strobe signal and an auto-precharge flag signal. The set signal generator is configured to generating a set signal in response to receiving the control signal and the precharge control signal. The auto-precharge signal generator is configured to generate an auto-precharge signal in response to receiving the set signal and a period set signal. | 06-10-2010 |
20100302872 | BUFFER CONTROL SIGNAL GENERATION CIRCUIT AND SEMICONDUCTOR DEVICE - A buffer control signal generation circuit includes a burst start signal generator, a command decoder, a burst controller, and a burst column controller. The burst start signal generator shifts a write pulse into a first period to generate a first burst start signal and shifts the write pulse into a second period to generate a second burst start signal, such that the second period being shorter than the first period. The command decoder generates a burst period pulse and a column active pulse in response to the second burst start signal and a column control signal. The burst controller receives the column active pulse and buffers the burst period pulse to generate a burst end signal. The burst column controller generates the column control signal from the burst end signal and the column active pulse. | 12-02-2010 |
20100302873 | MODE-REGISTER READING CONTROLLER AND SEMICONDUCTOR MEMORY DEVICE - A mode-register reading controller includes a switching signal generator, first and second transmitters, and a control signal generator. The switching signal generator generates a switching signal that is activated when the reset command is input during a mode-register reading operation. The first transmitter buffers and transfers the mode-register read signal in response to the switching signal. The second transmitter, in response to the switching signal, delays and transfers the enable signal at a predetermined delay time. The control signal generator receives a signal from one of the first and second transmitters and generates a first control signal and a second control signal for transferring the data into a data output buffer from the input/output line. | 12-02-2010 |
20120163099 | MODE-REGISTER READING CONTROLLER AND SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device may include a mode-register reading controller and a mode register. The mode-register reading controller generates a control signal for loading data into an input/output line in response to an enable signal, during a mode-register reading operation. The control signal is generated in response to a mode-register read signal when there is a reset command is input. The mode register loads the data into the input/output line in response to the control signal. | 06-28-2012 |
20120163100 | AUTO-PRECHARGE SIGNAL GENERATOR - An auto-precharge signal generation circuit comprises a signal generator, a set signal generator, and an auto-precharge signal generator. The signal generator is configured to generating a control signal and a precharge control signal in response to receiving a first column address strobe signal and an auto-precharge flag signal. The set signal generator is configured to generating a set signal in response to receiving the control signal and the precharge control signal. The auto-precharge signal generator is configured to generate an auto-precharge signal in response to receiving the set signal and a period set signal. | 06-28-2012 |
Patent application number | Description | Published |
20090003095 | Column access control apparatus having fast column access speed at read operation - A column access control apparatus comprises a column signal control unit for controlling a write CAS pulse signal and an internal CAS pulse signal in response to a first signal, and a column decoder for outputting a column decoding signal using an output signal of the column signal control unit and the first signal. The column signal control unit delays the internal CAS pulse signal and the write CAS pulse signal to output delayed signals when the first signal is activated. | 01-01-2009 |
20090327524 | Data output control circuit - A data output control circuit in a semiconductor memory device includes a driving signal generating unit configured to decode first and second I/O mode signals and first and second address level signals in response to a bank active signal and generate driving signals, and a data output multiplexing unit configured to output data signals of global I/O lines as multiplexing signals in response to the driving signals. | 12-31-2009 |
20100085819 | Burst length control circuit and semiconductor memory device using the same - A burst length control circuit capable of performing read and write operations in high speed according to a burst length and a semiconductor memory device using the same includes a clock signal generating unit for generating first and second internal clock signals from a clock signal in response to a first and second burst signals, a control signal generating unit for driving in response to the first and second internal clock signals, wherein the control signal generating unit for generating first and second control signals, enable sections of the first and second control signals being controlled according to the first and second burst signals at a read operation or write operation, and a burst termination signal generating unit for generating a burst termination signal in response to the first and second burst signals. The first control signal is disabled in response to the burst termination signal. | 04-08-2010 |
20100109735 | Control signal generation circuit and sense amplifier circuit using the same - A control signal generation circuit includes a voltage detection unit which detects a level of an external voltage and generates first and second detection signals and a control signal control unit which delays a sense amplifier enable signal in response to the first and second detection signals and generates first through third control signals. The enable period of the first and second control signals are controlled based on the levels of the first and second detection signals. | 05-06-2010 |
20100146161 | Burst termination control circuit and semiconductor memory device using the same cross-references to related application - A burst termination control circuit includes: a pull-up unit for pulling up a first node in response to a burst termination signal, a latch unit for latching a signal of the first node, a buffer for generating a first termination control signal for stopping data output operation by buffering an output signal of the latch unit, and a logic unit for generating a second termination control signal for stopping burst operation and generation of an output enable signal in response to an output signal of the latch unit. | 06-10-2010 |
20100156480 | Control signal generation circuit - A control signal generation circuit includes a pulse signal generator configured to delay a column control signal by delay times different from each other and to generate first and second pulse signals, a reset signal generator configured to transfer alternatively the first and second pulse signals as a reset signal in response to a write/read flag signal, and a write-enable signal generator configured to generate a write-enable signal from the first pulse signal in response to the write/read flag signal. | 06-24-2010 |
20120155193 | BURST TERMINATION CONTROL CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE USING THE SAME CROSS-REFERENCES TO RELATED APPLICATION - A semiconductor memory device includes a burst termination control unit and a data output control unit. The burst termination control unit generates a termination control signal, a read command, a write command and a mode resister read command. The data output control unit stops a data output operation in response to the termination control signal. | 06-21-2012 |
20120195143 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes: a burst start signal generation unit configured to generate a first burst start signal by delaying a write pulse by a first period, generate a second burst start signal by delaying the write pulse by a second period, and selectively transmit the first or second burst start signal as a select burst start signal in response to a test signal; an input control signal generation unit configured to generate an input control signal in response to the first burst start signal; and a write command generation unit configured to generate a write driver enable signal in response to the select burst start signal. | 08-02-2012 |
20130114331 | CONTROL SIGNAL GENERATION CIRCUIT AND SENSE AMPLIFIER CIRCUIT USING THE SAME - A control signal generation circuit includes a voltage detection unit which detects a level of an external voltage and generates first and second detection signals and a control signal control unit which delays a sense amplifier enable signal in response to the first and second detection signals and generates first through third control signals. The enable period of the first and second control signals are controlled based on the levels of the first and second detection signals. | 05-09-2013 |
20140218995 | SEMICONDUCTOR CHIPS - A semiconductor chip includes a core region having a plurality of first memory cells and a first edge adjacent to a first side of the core region. The first edge includes a first region and a second region. The first region includes a plurality of second memory cells, and the second region includes a first pad portion through which at least one of an address signal, a command signal, a clock signal, a data signal and a control signal is inputted or outputted. | 08-07-2014 |